CN102307010A - Data transmission voltage conversion circuit - Google Patents
Data transmission voltage conversion circuit Download PDFInfo
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- CN102307010A CN102307010A CN201110271847A CN201110271847A CN102307010A CN 102307010 A CN102307010 A CN 102307010A CN 201110271847 A CN201110271847 A CN 201110271847A CN 201110271847 A CN201110271847 A CN 201110271847A CN 102307010 A CN102307010 A CN 102307010A
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Abstract
The invention relates to a data transmission voltage conversion circuit which is used for completing the communication between a master device and a slave device. The circuit comprises a voltage conversion module and a switch module, wherein the voltage conversion module is electrically connected between the output end of the master device and the input end of the slave device and used for completing equidirectional level transmission and voltage conversion functions; and the switch module is electrically connected between the output end of the master device and the input end of the slave device and used for clamping the voltage of the output end of the voltage conversion module in a low level and voltage range and realizing equidirectional transmission when the low level is transmitted. According to the invention, the switch module is additionally arranged in the data transmission voltage conversion circuit; and when the level is transmitted between the master device and the slave device, the switch module can clamp the voltage of the output end of the voltage conversion module in the low level and voltage range and realize the equidirectional transmission of the level, thus the logical error of signals transmitted between the master device and the slave device can be effectively avoided and the normal communication between the master device and the slave device can be ensured.
Description
Technical field
The present invention relates to voltage conversion circuit, more particularly, relate to a kind of stable voltage conversion circuit of data between main equipment and the slave unit that guarantees.
Background technology
In the electronic circuit, be through I between many chips and the chip at present
2The C bus communication.But the IO voltage of two chips is obstructed probably, and this just causes in the circuit will increase voltage conversion circuit, to satisfy the communicating requirement between the chip.In the voltage conversion circuit commonly used, only used an inside to have the conversion chip U1 of two N type FETs (NMOS pipe) to realize voltage transitions separately, physical circuit is as shown in Figure 1.
Among Fig. 1, left-side signal end SCL_IN is connected the output of main equipment chip with SDA_IN, and right-side signal end SCL_OUT is connected the input of slave unit chip with SDA_OUT.SCL_IN and SDA_IN are connected the power supply of 3V respectively through pull-up resistor R11, R12, SCL_OUT and SDA_OUT are connected the power supply of 5V respectively through pull-up resistor R13, R14.Two inner NMOS pipe pins of conversion chip U1 are respectively source S 1, grid G 1, drain D 1, and source S 2, grid G 2, drain D 2, the pin 1,2,3,4,5,6 of corresponding conversion chip U1 respectively.Wherein, source S 1 is connected with SDA_IN with SCL_IN respectively with source S 2, and drain D 1 is connected with SDA_OUT with SCL_OUT respectively with drain D 2, and grid G 1 all is connected the CPU of 3.3V respectively with grid G 2, and passes through coupling capacitance C11 ground connection.
When input SCL_IN or SDA_IN were low level, there was pressure reduction in the source S-grid G inter-stage of NMOS pipe in the conversion chip, and NMOS manage conducting, exported simultaneously also to be dragged down; When input SCL_IN or SDA_IN were high level, there be not pressure reduction in source electrode and the grid inter-stage of NMOS pipe in the conversion chip, and the NMOS pipe is ended, and the output cable can be by La Lagao on the 5V power supply, make to export SCL_OUT or SDA_OUT becomes high level.
But there is a hidden danger in the voltage conversion circuit connected mode shown in Fig. 1; That is: when input SCL_IN or SDA_IN are low level, there is the pressure reduction about 0.5V between the source electrode of NMOS pipe and the drain electrode in the conversion chip, exports simultaneously and have certain pressure reduction on the cable; If the pressure reduction on the output cable reaches more than the 0.3V; The total pressure reduction of output is 0.8V, and then slave unit does not think that probably this 0.8V voltage is low level, thereby it is not handled.To cause the low level signal of main equipment can't be transferred to slave unit like this, break down thereby cause communicating by letter between main equipment and the slave unit.
Summary of the invention
The technical problem that the present invention will solve is, to the above-mentioned defective of prior art, a kind of transfer of data stable data transmission voltage change-over circuit between main equipment and the slave unit that guarantees is provided.
The technical solution adopted for the present invention to solve the technical problems is:
Construct a kind of transfer of data voltage conversion circuit; Be used to accomplish between main equipment and the slave unit and communicate by letter; Comprise being connected electrically between said main equipment output and the said slave unit input, being used to accomplish that level transmits in the same way and the voltage transformation module of voltage conversion function, also comprise being connected electrically between said main equipment output and the said slave unit input, being used for when the transmission low level voltage clamp with the said voltage transformation module output switch module of transmission in the same way in the low level voltage scope.
Transfer of data voltage conversion circuit of the present invention; Wherein, Said switch module comprises when being used between said main equipment and said slave unit the transmission low level, with the voltage control unit of voltage clamp in the low level voltage scope of said voltage transformation module output, and comprise when being used between said main equipment and said slave unit the transmission low level, guarantee input and output control unit in the same way in the same way; Wherein,
The input of said control unit in the same way connects said main equipment output, and the output of said control unit in the same way connects the input of said voltage control unit, and the output of said voltage control unit connects said slave unit input.
Transfer of data voltage conversion circuit of the present invention; Wherein, Said control unit in the same way comprises first triode; The base stage of said first triode is connected said main equipment output through first base resistance, and the collector electrode of said first triode connects first power supply through first pull-up resistor, the grounded emitter of said first triode;
Said voltage control unit comprises second triode; The base stage of said second triode connects the collector electrode of said first triode; The collector electrode of said second triode connects said slave unit input and connects first power supply through second pull-up resistor simultaneously, the grounded emitter of said second triode.
Transfer of data voltage conversion circuit of the present invention; Wherein, Said control unit in the same way comprises first FET; The grid of said first FET is connected said main equipment output through first base resistance, and the drain electrode of said first FET connects first power supply through first pull-up resistor, the source ground of said first FET;
Said voltage control unit comprises second triode; The base stage of said second triode connects the drain electrode of said first FET; The collector electrode of said second triode connects said slave unit input and connects first power supply through second pull-up resistor simultaneously, the grounded emitter of said second triode.
Transfer of data voltage conversion circuit of the present invention; Wherein, Said voltage transformation module comprises second FET; The grid of said second FET connects second source and simultaneously through the first coupling capacitance ground connection, the source electrode of said second FET connects said main equipment output and connects second power supply through the 3rd pull-up resistor simultaneously, and the drain electrode of said second FET connects said slave unit input and connects first power supply through the 4th pull-up resistor simultaneously; Said first supply voltage is greater than said second source voltage.
Transfer of data voltage conversion circuit of the present invention, wherein, said first base resistance is 100-260 ohm.
Transfer of data voltage conversion circuit of the present invention, wherein, said first pull-up resistor and said second pull-up resistor are 10,000-100 kilohms.
Transfer of data voltage conversion circuit of the present invention, wherein, said the 3rd pull-up resistor is 10,000-100 kilohms.
Transfer of data voltage conversion circuit of the present invention, wherein, said the 4th pull-up resistor is 1,000-10 kilohms.
Transfer of data voltage conversion circuit of the present invention, wherein, said first power supply is 5V, said second source is 3.3V.
Beneficial effect of the present invention is: through in voltage conversion circuit, increasing by a switch module; When this switch module can transmit low level between main equipment and slave unit; With the voltage clamp of voltage transformation module output in the low level voltage scope; And the transmission in the same way of realization level, mistake appears in the signal logic that can effectively avoid transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.
Description of drawings
To combine accompanying drawing and embodiment that the present invention is described further below, in the accompanying drawing:
Fig. 1 is a voltage conversion circuit principle schematic of the prior art;
Fig. 2 is the transfer of data voltage conversion circuit theory diagram one of preferred embodiment of the present invention;
Fig. 3 is the transfer of data voltage conversion circuit theory diagram two of preferred embodiment of the present invention;
Fig. 4 is the transfer of data voltage conversion circuit principle schematic one of preferred embodiment of the present invention;
Fig. 5 is the transfer of data voltage conversion circuit principle schematic two of preferred embodiment of the present invention;
Fig. 6 is the transfer of data voltage conversion circuit principle schematic of the band double input end and the output of preferred embodiment of the present invention.
Embodiment
The transfer of data voltage conversion circuit theory diagram of preferred embodiment of the present invention is as shown in Figure 2; Be used to accomplish between main equipment and the slave unit and communicate by letter; Comprise being connected electrically between main equipment output and the slave unit input, being used to accomplish that level transmits in the same way and the voltage transformation module 20 of voltage conversion function that also comprise the switch module 10 that is connected electrically between main equipment output and the slave unit input, this switch module 10 is when the transmission low level; With the voltage clamp of voltage transformation module 20 outputs in the low level voltage scope; 0.1V for example, and can guarantee the transmission in the same way of level, though this moment voltage transformation module output have pressure reduction; Mistake appears in the signal logic that also can avoid transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.Wherein, main equipment promptly sends the master chip of clock signal and data, clock signal that slave unit promptly receives this master chip and sent and data from chip.
In a further embodiment; As shown in Figure 3; Switch module 10 comprises when being used between main equipment and slave unit the transmission low level, with the voltage control unit 12 of voltage clamp in the low level voltage scope of voltage transformation module 20 outputs, and comprise when being used between main equipment and slave unit the transmission low level, guarantee input and output control unit in the same way 11 in the same way.The input of control unit 11 connects the main equipment output in the same way, and the output of control unit 11 connects the input of voltage control unit 12 in the same way, and the output of voltage control unit 12 connects the slave unit input.When between main equipment and slave unit, transmitting low level signal; Can be in the low level scope through voltage control unit 12 with voltage transformation module 20 output end voltage clampers; Combine simultaneously the transmission in the same way of control unit 11 assurance level in the same way again; Thereby mistake appears in the signal logic of avoiding transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.
In embodiment further; As shown in Figure 4; The control unit in the same way 11 of above-mentioned switch module 10 comprises the first triode Q1; The base stage of the first triode Q1 is connected main equipment output SCL_IN through the first base resistance R5, and the collector electrode of the first triode Q1 connects first power supply through the first pull-up resistor R1, the grounded emitter of the first triode Q1.Voltage control unit comprises the second triode Q2; The base stage of the second triode Q2 connects the collector electrode of the first triode Q1; The collector electrode of the second triode Q2 connects slave unit input SCL_OUT and connects first power supply through the second pull-up resistor R2, the grounded emitter of the second triode Q2 simultaneously.In the present embodiment, adopt triode to realize control unit in the same way, its switching speed is fast than field effect pipe (metal-oxide-semiconductor), and therefore time-delay is short, can effectively reduce data-signal mistake transfer rate.
When the main equipment output is output as high level signal; The base stage of the first triode Q1 is a high level; The collector electrode C of the first triode Q1 and emitter E conducting, this moment the first triode Q1 current collection very about 0.1V, the then collector electrode C of the second triode Q2 and not conducting of emitter E; So the output of voltage transformation module 20, promptly the input of slave unit will be moved to the high level with the identical voltage of the first power supply V1 by the second pull-up resistor R2 of outside; When the main equipment output was output as low level, even voltage transformation module 20 conductings were when voltage transformation module 20 adopts metal-oxide-semiconductor; The inner potential barrier effect of metal-oxide-semiconductor causes existing between the two poles of the earth the pressure reduction about a 0.5V; The base stage that still can guarantee the first triode Q1 is a low level, and collector electrode C and emitter E just can conductings, but because the effect of the first power supply V1 voltage; The collector electrode C of the first triode Q1 is a high level just; Will conducting between the collector electrode C of the second triode Q2 and emitter E, impelling the collector electrode C voltage of the second triode Q2 is about 0.1V, so the output level of voltage transformation module 20 and switch module 10 will be by clamped about 0.1V; Thereby mistake appears in the signal logic of avoiding transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.
In embodiment further; As shown in Figure 5; The control unit in the same way 11 of above-mentioned switch module 10 comprises the first FET Q7; The grid of the first FET Q7 is connected main equipment output SCL_IN through the first base resistance R5, and the drain D of the first FET Q7 connects the first power supply V1, the source ground of the first FET Q5 through the first pull-up resistor R1.Same voltage control unit 12 comprises the second triode Q2; The base stage B of the second triode Q2 connects the drain D of the first FET Q7; The collector electrode C of the second triode Q2 connects SCL_OUT and connects the first power supply V1 through the second pull-up resistor R2 simultaneously, the emitter R ground connection of the second triode Q2.In the present embodiment, adopt metal-oxide-semiconductor to realize control unit in the same way, though its switching speed is slow than triode; But metal-oxide-semiconductor is voltage-controlled element, is input as high resistant, and is little to current requirements; Therefore also low to the requirement of input signal, can effectively reduce data-signal mistake transfer rate.
When the main equipment output is output as high level signal; The grid G of the first FET Q7 is a high level; The source S of the first FET Q7 and drain D conducting, at this moment, the source S of the first FET Q7 and drain D voltage difference are 0V; Then the base stage of the second triode Q2 is a low level; The collector electrode C of the second triode Q2 and not conducting of emitter E, so the output of voltage transformation module 20, promptly the input of slave unit will be moved to the high level with the identical voltage of the first power supply V1 by the second pull-up resistor R2 of outside; When the main equipment output is output as low level; Voltage transformation module 20 conductings; Even when voltage transformation module 20 adopts metal-oxide-semiconductor, the inner potential barrier effect of metal-oxide-semiconductor causes having the pressure reduction about a 0.5V between the two poles of the earth, and the grid that still can guarantee the first FET Q7 is a low level; The source S of the first FET Q7 and drain D just can conductings; But because the effect of the first power supply V1 voltage, the drain electrode of the first FET Q7 be a high level just, so will conducting between the collector electrode C of the second triode Q2 and emitter E; Impelling the collector electrode C voltage of the second triode Q2 is about 0.1V; So the output level of voltage transformation module 20 and switch module 10 will be by clamped about 0.1V, thereby mistake appears in the signal logic of avoiding transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.
In embodiment further; Like Fig. 4 and shown in Figure 5; Above-mentioned voltage transformation module 20 comprises the second FET Q5; The grid of the second FET Q5 connects second source V2 and simultaneously through the first coupling capacitance C1 ground connection, the source electrode of the second FET Q5 connects the main equipment output and connects the second power supply V2 through the 3rd pull-up resistor R7 simultaneously, and the drain electrode of the second FET Q5 connects the slave unit input and connects the first power supply V1 through the 4th pull-up resistor R9 simultaneously.And the above-mentioned first power supply V1 voltage is greater than second source V2 voltage, and concrete voltage swing can be used for selecting according to actual making, when for example being applied in the television set; Elect second source V2 voltage as 3.3V, the first power supply V1 voltage is elected 5V as, promptly the television reception end on draw voltage; To keep the consistency of power supply; Can reduce race hazard as much as possible like this, otherwise can produce burr, the signal logic that slave unit is received produces mistake.
When the main equipment output is output as high level signal; The source voltage of the second FET Q5 equates with second source V2 voltage; Then the voltage difference between the source electrode of the second FET Q5 and drain electrode is that 0V is less than 1V; So the second FET Q5 ends, make that the base stage of the first triode Q1 in the foregoing description or the grid G of the first FET Q7 are high level; When the main equipment output is output as low level signal; The pressure reduction that has just had a forward between the grid of the second FET Q5 and source electrode; Source electrode will conducting with drain electrode; So the drain electrode of the second FET Q5 is a low level also just, but because there is the pressure reduction about a 0.5V in the inner potential barrier effect of the second FET Q5 between grid and the source electrode; So the drain voltage of the second FET Q5 just about 0.5V, makes that the base stage of the first triode Q1 in the foregoing description or the grid G of the first FET Q7 are low level.
Because metal-oxide-semiconductor is extreme fragile; Thin-oxide insulator between grid and raceway groove can receive the electricity ambuscade from the static object; Though interactional discharging current amount is not very big; But oxide-insulator is extremely thin (electric capacity of grid and raceway groove is very little, only several PF of representative value), and very little electric current just can puncture metal-oxide-semiconductor; This just is unfavorable for upward production of industry, and the price of metal-oxide-semiconductor is far above triode; Because the drain-source resistance r during the metal-oxide-semiconductor conducting
DSSaturation resistance R than transistor
CEMuch bigger; Metal-oxide-semiconductor is many electronic conductions, and triode conducts electricity when to be charge carrier be hole and electron synchrotron, and there is bigger electric capacity in grid the two poles of the earth, source drain-gate two interpolars of Here it is metal-oxide-semiconductor; And the electric capacity between the base stage of triode and collector electrode, base stage and emitter is less; In high frequency, can ignore, metal-oxide-semiconductor needs long recovery time when high level step-down level or low level uprise level like this.So; The charge and discharge time of metal-oxide-semiconductor is longer, makes the switching speed of metal-oxide-semiconductor lower than the switching speed of transistor, and the double pole triode collector junction capacitance is also little; The hundreds of KHz even the higher so common emitter amplifier of doing load with resistance just can easily be worked, this is for I
2The C signal is enough.Therefore in the foregoing description, comparatively preferably adopt triode to realize control unit 11 and voltage control unit 12 in the same way.
Below to adopt triode to realize that simultaneously the transfer of data voltage conversion circuit of control unit 11 and voltage control unit 12 is that example is to I in the same way
2The transmission of C bus signals is elaborated; As shown in Figure 6, the main equipment output end signal has two, is respectively SCL_IN and SDA_IN; The slave unit input end signal is SCL_OUT and SDA_OUT, and wherein the clock signal of transfer of data voltage conversion circuit is provided by the SCL_IN of main equipment.Wherein, the SDA_IN end is connected to the SDA_OUT end through the 3rd FET Q6, and the grid G of the 3rd FET Q6 is through the first coupling capacitance ground connection; Connect second source V2 simultaneously, the source S of the 3rd FET Q6 connects second source V2 through the 5th pull-up resistor R8, and the drain D of the 3rd FET Q6 connects the SDA_OUT end; And connect the first power supply V1 through the 6th pull-up resistor R10; The source S of three FET Q6 also is connected to the base stage of the 3rd triode Q3 through the second base resistance R6, the 3rd triode Q3 grounded emitter, and the 3rd triode Q3 collector electrode C meets the first power supply V1 through the 7th pull-up resistor R3; The base stage that connects the 4th triode Q4 simultaneously; The grounded emitter of the 4th triode Q4, collector electrode C meets the first power supply V1 through the 8th pull-up resistor R4, connects the SDA_OUT end simultaneously.
According to I
2C agreement: I
2The C bus has three types of signals in transmitting data procedures, they are respectively: commencing signal, end signal and answer signal.Wherein, when commencing signal: SCL_IN was high level, SDA_IN to low transition, began to transmit data by high level; When end signal: SCL_IN was low level, SDA_IN to the high level saltus step, finished to transmit data by low level; Answer signal: the slave unit that receives data sends specific low level pulse to the main equipment that sends data after receiving the 8bit data, data have been received in expression.Main equipment waits for that slave unit sends an answer signal after slave unit sends a signal, after main equipment receives answer signal, make whether continuing to transmit signal judgment according to actual conditions.If do not receive answer signal, be judged as slave unit and break down, after SDA_IN has transmitted data, can remain high level, the wait acknowledge signal., slave unit can return a low level answer signal after receiving read write command; Be that SDA_OUT is dragged down; This moment, voltage transformation module 20 interior FETs but ended, and the inner body diode of FET has just played effect like this, makes SDA_IN to be dragged down.
When SDA_IN was input as high level, the source electrode of the 3rd FET Q6 was 3.3V just, and then the voltage difference between source electrode and drain electrode is 0V; Less than 1V, so the 3rd FET Q6 ends, the base stage of the 3rd triode Q3 is high; Its collector and emitter conducting, the current collection of the 3rd triode Q3 be very about 0.1V, the then not conducting of collector and emitter of the 4th triode Q4; So SDA_OUT will be moved to high level by the pull-up resistor of outside.When SDA_IN is input as low level, just there has been the pressure reduction of a forward between the grid of the 3rd FET Q6 and source electrode, source electrode will conducting with drain electrode, so the drain electrode of the 3rd FET Q6 is a low level also just.But because the inner potential barrier effect of the 3rd FET Q6 causes having the pressure reduction about a 0.5V between the two poles of the earth, so the drain electrode of the 3rd FET Q6 is just about 0.5V.At this moment; The base stage of the 3rd triode Q3 is a low level, and collector and emitter the two poles of the earth just can conducting, but because the effect of the first power supply V1 voltage; The collector electrode of the 3rd triode Q3 is a high level just; Will conducting between the collector and emitter of the 4th triode Q4, the collector voltage that impels the 4th triode Q4 is about 0.1V, so output level will be by clamped about 0.1V.So just can avoid equipment end I
2The low level of C receives and has wrong possibility.
In the foregoing description, the first base resistance R5 that is adopted in the switch module 10 and the second base resistance the R6 just electric current in the control circuit are about 10MA, if electric current low signal then too, electric current is too high can to influence reception too.Therefore the first base resistance R5 and the second base resistance R6 Standard resistance range are 100-260 ohm.
Preferably; Choosing of the first pull-up resistor R1, the second pull-up resistor R2, the 3rd pull-up resistor R7, the 5th pull-up resistor R8, the 4th pull-up resistor R9, the 6th pull-up resistor R10, the 7th pull-up resistor R3, the 8th pull-up resistor R4 is relevant with last pulling rate degree, if pull-up resistor is big, on the speed of drawing just slow; But it is low in energy consumption; Pull-up resistor is little, and speed is fast, but power consumption is just high.I
2The highest transfer rate that C supports is 100Kbps, then in order to make power consumption as much as possible little, guarantees I
2The normal transmission of C signal is according to time constant t=RC; Elect the first pull-up resistor R1, the second pull-up resistor R2, the 7th pull-up resistor R3, the 8th pull-up resistor R4, the 3rd pull-up resistor R7, the 5th pull-up resistor R8 as 10,000-100 kilohms, elect the 4th pull-up resistor R9, the 6th pull-up resistor R10 as 1,000-10 kilohms.
In sum; The present invention is through increasing by a switch module 10 in voltage conversion circuit; When this switch module 10 can transmit low level between main equipment and slave unit, the voltage clamp of voltage transformation module 20 outputs in the low level voltage scope, and is realized the transmission in the same way of level; Mistake appears in the signal logic that can effectively avoid transmitting between main equipment and the slave unit, thereby guarantees the proper communication between main equipment and the slave unit.
Should be understood that, concerning those of ordinary skills, can improve or conversion, and all these improvement and conversion all should belong to the protection range of accompanying claims of the present invention according to above-mentioned explanation.
Claims (10)
1. transfer of data voltage conversion circuit; Be used to accomplish between main equipment and the slave unit and communicate by letter; Comprise and be connected electrically between said main equipment output and the said slave unit input, be used to accomplish that level transmits in the same way and the voltage transformation module of voltage conversion function (20); It is characterized in that, also comprise be connected electrically between said main equipment output and the said slave unit input, be used for transmission during low level with the voltage clamp of said voltage transformation module (20) the output switch module (10) of transmission in the same way in the low level voltage scope.
2. transfer of data voltage conversion circuit according to claim 1; It is characterized in that; Said switch module (10) comprises when being used between said main equipment and said slave unit the transmission low level, with the voltage control unit (12) of voltage clamp in the low level voltage scope of said voltage transformation module (20) output, and comprise when being used between said main equipment and said slave unit the transmission low level, guarantee input and output control unit in the same way (11) in the same way; Wherein,
The input of said control unit in the same way (11) connects said main equipment output; The output of said control unit in the same way (11) connects the input of said voltage control unit (12), and the output of said voltage control unit (12) connects said slave unit input.
3. transfer of data voltage conversion circuit according to claim 2; It is characterized in that; Said control unit in the same way comprises first triode (Q1); The base stage of said first triode (Q1) is connected said main equipment output through first base resistance (R5), and the collector electrode of said first triode (Q1) connects first power supply (V1), the grounded emitter of said first triode (Q1) through first pull-up resistor (R1);
Said voltage control unit comprises second triode (Q2); The base stage of said second triode (Q2) connects the collector electrode of said first triode (Q1); The collector electrode of said second triode (Q2) connects said slave unit input and connects first power supply (V1), the grounded emitter of said second triode (Q2) through second pull-up resistor (R2) simultaneously.
4. transfer of data voltage conversion circuit according to claim 2; It is characterized in that; Said control unit in the same way comprises first FET (Q7); The grid of said first FET (Q7) is connected said main equipment output through first base resistance (R5), and the drain electrode of said first FET (Q7) connects first power supply (V1), the source ground of said first FET (Q7) through first pull-up resistor (R1);
Said voltage control unit comprises second triode (Q2); The base stage of said second triode (Q2) connects the drain electrode of said first FET (Q7); The collector electrode of said second triode (Q2) connects said slave unit input and connects first power supply (V1), the grounded emitter of said second triode (Q2) through second pull-up resistor (R2) simultaneously.
5. transfer of data voltage conversion circuit according to claim 1; It is characterized in that; Said voltage transformation module comprises second FET (Q5); The grid of said second FET (Q5) connects second source (V2) and passes through first coupling capacitance (C1) ground connection simultaneously; The source electrode of said second FET (Q5) connects said main equipment output and connects second power supply (V2) through the 3rd pull-up resistor (R7) simultaneously, and the drain electrode of said second FET (Q5) connects said slave unit input and connects first power supply (V1) through the 4th pull-up resistor (R9) simultaneously; Said first power supply (V1) voltage is greater than said second source (V2) voltage.
6. according to claim 3 or 4 described transfer of data voltage conversion circuits, it is characterized in that said first base resistance (R5) is 100-260 ohm.
7. according to claim 3 or 4 described transfer of data voltage conversion circuits, it is characterized in that said first pull-up resistor (R1) and said second pull-up resistor (R2) are 10,000-100 kilohms.
8. transfer of data voltage conversion circuit according to claim 5 is characterized in that, said the 3rd pull-up resistor (R7) is 10,000-100 kilohms.
9. transfer of data voltage conversion circuit according to claim 5 is characterized in that, said the 4th pull-up resistor (R9) is 1,000-10 kilohms.
10. transfer of data voltage conversion circuit according to claim 5 is characterized in that, said first power supply (V1) is 5V, and said second source (V2) is 3.3V.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841823A (en) * | 2016-10-11 | 2017-06-13 | 英特格灵芯片(天津)有限公司 | A kind of open-loop voltage detecting system |
| CN108599556A (en) * | 2018-01-25 | 2018-09-28 | 青岛海信电器股份有限公司 | Voltage conversion circuit |
| CN109542821A (en) * | 2018-12-03 | 2019-03-29 | 郑州云海信息技术有限公司 | A kind of I2C communicating control method, device, equipment and system |
| CN112953221A (en) * | 2021-02-23 | 2021-06-11 | 山东英信计算机技术有限公司 | Voltage conversion device |
| CN113848948A (en) * | 2021-10-20 | 2021-12-28 | 北京京东乾石科技有限公司 | Detection circuit and robot control circuit |
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| CN1212518A (en) * | 1997-09-10 | 1999-03-31 | 西门子公司 | Level switching circuit |
| CN1568572A (en) * | 2001-11-27 | 2005-01-19 | 快捷半导体有限公司 | Active voltage level bus switch (or pass gate) translator |
| US20060132215A1 (en) * | 2004-12-17 | 2006-06-22 | Hon Hai Precision Industry Co., Ltd. | Signal converting circuit |
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| CN1212518A (en) * | 1997-09-10 | 1999-03-31 | 西门子公司 | Level switching circuit |
| CN1568572A (en) * | 2001-11-27 | 2005-01-19 | 快捷半导体有限公司 | Active voltage level bus switch (or pass gate) translator |
| US20060132215A1 (en) * | 2004-12-17 | 2006-06-22 | Hon Hai Precision Industry Co., Ltd. | Signal converting circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841823A (en) * | 2016-10-11 | 2017-06-13 | 英特格灵芯片(天津)有限公司 | A kind of open-loop voltage detecting system |
| CN106841823B (en) * | 2016-10-11 | 2023-06-06 | 豪威模拟集成电路(北京)有限公司 | Open-loop voltage detection system |
| CN108599556A (en) * | 2018-01-25 | 2018-09-28 | 青岛海信电器股份有限公司 | Voltage conversion circuit |
| CN109542821A (en) * | 2018-12-03 | 2019-03-29 | 郑州云海信息技术有限公司 | A kind of I2C communicating control method, device, equipment and system |
| CN109542821B (en) * | 2018-12-03 | 2021-11-19 | 郑州云海信息技术有限公司 | I2C communication control method, device, equipment and system |
| CN112953221A (en) * | 2021-02-23 | 2021-06-11 | 山东英信计算机技术有限公司 | Voltage conversion device |
| CN113848948A (en) * | 2021-10-20 | 2021-12-28 | 北京京东乾石科技有限公司 | Detection circuit and robot control circuit |
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| Publication number | Publication date |
|---|---|
| CN102307010B (en) | 2013-10-09 |
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