CN102299219A - Nano-patterned substrate and preparation method thereof and light emitting diode - Google Patents
Nano-patterned substrate and preparation method thereof and light emitting diode Download PDFInfo
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- CN102299219A CN102299219A CN2011102505609A CN201110250560A CN102299219A CN 102299219 A CN102299219 A CN 102299219A CN 2011102505609 A CN2011102505609 A CN 2011102505609A CN 201110250560 A CN201110250560 A CN 201110250560A CN 102299219 A CN102299219 A CN 102299219A
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Abstract
The invention, which belongs to the light emitting diode (LED) field, provides a nano-patterned substrate and a preparation method thereof and an LED. The preparation method comprises the following steps: providing a first sapphire substrate; depositing a metal aluminum thin layer on the first sapphire substrate; carrying out anodization on the metal aluminum thin layer to form alumina having a uniform porous structure; and converting the alumina into a second sapphire substrate having a uniform porous structure. According to a technical scheme of the embodiment of the invention, manufacturing technology is simple and production costs for LEDs are reduced.
Description
Technical field
The present invention relates to the light-emitting diode field, be meant a kind of nano patterning substrate and preparation method thereof and light-emitting diode especially.
Background technology
In the prior art, light-emitting diode (LED, light emitting diode) is applied in illuminator.But because the problem of its low IQE (internal quantum efficiency, internal quantum efficiency) and expensive/low lumen, light-emitting diode also can't be used widely at present.
The lumen that prior art adopts a lot of ways to attempt to improve the IQE of light-emitting diode and reduce the cost/raising light-emitting diode of light-emitting diode, such as EQE (the external quantum efficiency that increases light-emitting diode, external quantum efficiency), concrete implementation method comprises PSS (patterned sapphire substrate, graphic sapphire substrate) technology.
The graphic sapphire substrate is in etched mode, on Sapphire Substrate, design and produce out micron order or nanoscale and have the figure of micro-structural ad hoc rules, use the output light form (convex-concave pattern on the Sapphire Substrate can produce the extraction efficiency of the effect increase light of light scattering or refraction) of control LED, GaN film growth simultaneously can produce brilliant effect laterally of heap of stone on the graphic sapphire substrate, reduce and be grown in the dislocation defects between the GaN on the Sapphire Substrate, improve crystalloid amount of heap of stone, promote the IQE of LED.Wherein, the nano patterning Sapphire Substrate is better than a micron graphic sapphire substrate.
Be illustrated in figure 1 as a kind of PSS structure of traditional LED, wherein 11 is p type gallium nitride, and 12 is Multiple Quantum Well, and 13 is n type gallium nitride, and 14 is the graphic sapphire substrate, and 15 is Sapphire Substrate.Nanostructure of the prior art generally is to prepare on Sapphire Substrate, the manufacturing process more complicated, and need expensive in batches Sapphire Substrate, production cost is higher.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of nano patterning substrate and preparation method thereof and light-emitting diode, and manufacturing process is simple and can reduce the production cost of light-emitting diode.
For solving the problems of the technologies described above, embodiments of the invention provide technical scheme as follows:
On the one hand, provide a kind of preparation method of nano patterning substrate, comprising:
One first Sapphire Substrate is provided;
Preparation one metallic aluminium thin layer on described first Sapphire Substrate;
Described metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure;
Described aluminium oxide is changed into second Sapphire Substrate with even loose structure.
Further, described with described aluminium oxide change into have even loose structure second Sapphire Substrate after also comprise:
Deposition n type gallium nitride layer on described second Sapphire Substrate.
Further, the described metallic aluminium thin layer for preparing on described first Sapphire Substrate comprises:
Method by sputter deposits a metallic aluminium thin layer on described first Sapphire Substrate.
Further, describedly described metallic aluminium thin layer anodic oxygen changed into the aluminium oxide with even loose structure comprise:
Described metallic aluminium thin layer is carried out anodic oxidation in acidic electrolysis bath, formation has the aluminium oxide of even loose structure, and described acidic electrolysis bath comprises sulfuric acid, oxalic acid and phosphoric acid.
Further, describedly described aluminium oxide changed into second Sapphire Substrate with even loose structure comprise:
Described aluminium oxide is changed into second Sapphire Substrate with even loose structure through 1150 ℃ of sintering.
Further, in the described even loose structure, the spacing between the adjacent holes is 20nm-300nm.
Further, in the described even loose structure, the degree of depth in hole is 20nm-1000nm.
Further, in the described even loose structure, the Breadth Maximum in hole is 20nm-500nm.
The embodiment of the invention also provides more than one nano patterning substrates of stating the method preparation,
The embodiment of the invention also provides a kind of light-emitting diode, comprises above-mentioned nano patterning substrate, also comprises:
Be positioned at the n type gallium nitride layer on the described patterned substrate;
Be positioned at the Multiple Quantum Well on the described n type gallium nitride layer;
Be positioned at the p type gallium nitride layer on the described Multiple Quantum Well.
Embodiments of the invention have following beneficial effect:
In the such scheme, one metallic aluminium thin layer at first is provided on first Sapphire Substrate that provides, metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure, directly aluminium oxide is changed into second Sapphire Substrate with even loose structure afterwards, obtain the nano patterning substrate with this.The embodiment of the invention does not need directly Sapphire Substrate to be carried out nano patterning in the preparation process of nano patterning substrate, and manufacturing process is simple, helps to reduce the production cost of light-emitting diode.
Description of drawings
Fig. 1 is the structural representation of a kind of patterned substrate of light-emitting diode in the prior art;
Fig. 2 is preparation method's the schematic flow sheet of the nano patterning substrate of the embodiment of the invention;
Fig. 3 is among the preparation method of nano patterning substrate of the embodiment of the invention, the structural representation that forms after the steps A;
Fig. 4 is among the preparation method of nano patterning substrate of the embodiment of the invention, the structural representation that forms after the step B;
Fig. 5 is among the preparation method of nano patterning substrate of the embodiment of the invention, the structural representation that forms after the step C;
Fig. 6 is among the preparation method of nano patterning substrate of the embodiment of the invention, the structural representation that forms after the step D;
Fig. 7 is that the embodiment of the invention deposits the structural representation that forms after the n type gallium nitride on the nano patterning substrate;
Fig. 8 is the light-emitting diode structure schematic diagram of the embodiment of the invention.
Embodiment
For technical problem, technical scheme and advantage that embodiments of the invention will be solved is clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiments of the invention are at preparation technology's more complicated of patterned substrate in the prior art, the production cost problem of higher, a kind of nano patterning substrate and preparation method thereof and light-emitting diode are provided, and manufacturing process is simple and can reduce the production cost of light-emitting diode.
Fig. 2 is preparation method's the schematic flow sheet of the nano patterning substrate of the embodiment of the invention, and as shown in Figure 2, present embodiment comprises:
Step 201: one first Sapphire Substrate is provided;
Step 202: preparation one metallic aluminium thin layer on first Sapphire Substrate;
Step 203: metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure;
Step 204: aluminium oxide is changed into second Sapphire Substrate with even loose structure.
The preparation method of the nano patterning substrate of the embodiment of the invention, one metallic aluminium thin layer at first is provided on first Sapphire Substrate that provides, metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure, directly aluminium oxide is changed into second Sapphire Substrate with even loose structure afterwards, obtain the nano patterning substrate with this.The embodiment of the invention does not need directly Sapphire Substrate to be carried out nano patterning in the preparation process of nano patterning substrate, and manufacturing process is simple, helps to reduce the production cost of light-emitting diode.
Preparation method to patterned substrate of the present invention further specifies below in conjunction with accompanying drawing, and present embodiment may further comprise the steps:
Steps A a: Sapphire Substrate 1 is provided;
Be illustrated in figure 3 as the structural representation of Sapphire Substrate 1;
Step B: preparation one metallic aluminium thin layer 2 on Sapphire Substrate 1;
Particularly, can adopt method plated metal aluminium thin layer 2 on Sapphire Substrate 1 of sputter, form structure as shown in Figure 4, adopt sputtering method to deposit thickness and the uniformity that to control the metallic aluminium thin layer better;
Step C: metallic aluminium thin layer 2 anodic oxygen are changed into aluminium oxide 3 with even loose structure;
Particularly, metallic aluminium thin layer 2 can be carried out anodic oxidation in acidic electrolysis bath, form the aluminium oxide with even loose structure (AAO) 3 as shown in Figure 5, acidic electrolysis bath can comprise sulfuric acid, oxalic acid and phosphoric acid, in the present embodiment, because the thickness of metallic aluminium thin layer is smaller, therefore after carrying out anodic oxidation, can be converted into aluminium oxide fully;
Step D: aluminium oxide 3 is changed into Sapphire Substrate 4 with even loose structure.
Particularly, aluminium oxide 3 can be changed into the Sapphire Substrate (α-Al with even loose structure through 1150 ℃ of sintering
2O
3) 4, the nano patterning substrate of the formation embodiment of the invention as shown in Figure 6, this nano patterning substrate comprises Sapphire Substrate 1 and patterned substrate part 4.
Figure 8 shows that the light-emitting diode structure schematic diagram of the embodiment of the invention, as shown in Figure 8, present embodiment comprises: the nano patterning substrate; Be positioned at the n type gallium nitride layer 5 on the nano patterning substrate; Be positioned at Multiple Quantum Well 6 and p type gallium nitride layer 7 on the n type gallium nitride layer 5.
Wherein, this nano patterning substrate comprises Sapphire Substrate 1 and patterned substrate part 4.
After described method prepares the nano patterning substrate with steps A～D, on the nano patterning substrate, deposit n type gallium nitride layer 5 again.Particularly, can adopt MOCVD (metal organic chemical vapor deposition) technology on the nano patterning substrate, to deposit n type gallium nitride layer 5, form structure as shown in Figure 7.On n type gallium nitride layer 5, deposit Multiple Quantum Well 6 and p type gallium nitride layer 7 afterwards successively, can obtain embodiment of the invention light-emitting diode structure as shown in Figure 8.
In the light-emitting diode of the embodiment of the invention, as shown in Figure 8, evenly the spacing between the adjacent holes is s in the loose structure, and the degree of depth in hole is h, and the Breadth Maximum in hole is d, in the actual production process, can be optimized parameter s, d and h, to obtain higher EQE.Particularly, s can be 20nm-300nm, and h is 20nm-1000nm, and d is 20nm-500nm, and this structure can form photonic crystal, helps increasing the brightness of light-emitting diode.
Light-emitting diode of the present invention is compared with the light-emitting diode of growing up in general Sapphire Substrate, and brightness has increased more than 70%.
In the embodiment of the invention, one metallic aluminium thin layer at first is provided on first Sapphire Substrate that provides, metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure, directly aluminium oxide is changed into second Sapphire Substrate with even loose structure afterwards, obtain the nano patterning substrate with this.The embodiment of the invention does not need Sapphire Substrate is carried out nano patterning in the preparation process of nano patterning substrate, and manufacturing process is simple, helps to reduce the production cost of light-emitting diode.
The above is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. the preparation method of a nano patterning substrate is characterized in that, comprising:
One first Sapphire Substrate is provided;
Preparation one metallic aluminium thin layer on described first Sapphire Substrate;
Described metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure;
Described aluminium oxide is changed into second Sapphire Substrate with even loose structure.
2. the preparation method of nano patterning substrate according to claim 1 is characterized in that, described with described aluminium oxide change into have even loose structure second Sapphire Substrate after also comprise:
Deposition n type gallium nitride layer on described second Sapphire Substrate.
3. the preparation method of nano patterning substrate according to claim 1 is characterized in that, the described metallic aluminium thin layer for preparing on described first Sapphire Substrate comprises:
Method by sputter deposits a metallic aluminium thin layer on described first Sapphire Substrate.
4. the preparation method of nano patterning substrate according to claim 1 is characterized in that, describedly described metallic aluminium thin layer anodic oxygen is changed into the aluminium oxide with even loose structure comprises:
Described metallic aluminium thin layer is carried out anodic oxidation in acidic electrolysis bath, formation has the aluminium oxide of even loose structure, and described acidic electrolysis bath comprises sulfuric acid, oxalic acid and phosphoric acid.
5. the preparation method of nano patterning substrate according to claim 1 is characterized in that, describedly described aluminium oxide is changed into second Sapphire Substrate with even loose structure comprises:
Described aluminium oxide is changed into second Sapphire Substrate with even loose structure through 1150 ℃ of sintering.
6. the preparation method of nano patterning substrate according to claim 1 is characterized in that, in the described even loose structure, the spacing between the adjacent holes is 20nm-300nm.
7. the preparation method of nano patterning substrate according to claim 1 is characterized in that, in the described even loose structure, the degree of depth in hole is 20nm-1000nm.
8. the preparation method of nano patterning substrate according to claim 1 is characterized in that, further, in the described even loose structure, the Breadth Maximum in hole is 20nm-500nm.
9. a nano patterning substrate is characterized in that, described nano patterning substrate is with the described method preparation of claim 1-8.
10. a light-emitting diode is characterized in that, comprises nano patterning substrate as claimed in claim 9, also comprises:
Be positioned at the n type gallium nitride layer on the described nano patterning substrate;
Be positioned at the Multiple Quantum Well on the described n type gallium nitride layer;
Be positioned at the p type gallium nitride layer on the described Multiple Quantum Well.
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Cited By (3)
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| CN103378227A (en) * | 2012-04-27 | 2013-10-30 | 南亚光电股份有限公司 | Method for forming patterned sapphire substrate |
| CN104465917A (en) * | 2013-04-01 | 2015-03-25 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
| CN108538974A (en) * | 2018-05-15 | 2018-09-14 | 苏州瑞而美光电科技有限公司 | A kind of preparation method of nano patterned Sapphire Substrate |
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| US20090090930A1 (en) * | 2007-10-05 | 2009-04-09 | Shih-Peng Chen | Epitaxial substrate and manufacturing method thereof and manufacturing method of light emitting diode apparatus |
| CN101599466A (en) * | 2009-07-10 | 2009-12-09 | 中山大学 | Graph substrate that a kind of epitaxial growth is used and preparation method thereof |
| CN101640169A (en) * | 2009-08-21 | 2010-02-03 | 中山大学 | Preparation method of nano patterned substrate used for nitride epitaxial growth |
| CN101807646A (en) * | 2010-03-22 | 2010-08-18 | 徐瑾 | Highly efficient light-emitting diode by using air to form patterned substrate and preparation method thereof |
| CN102142487A (en) * | 2010-12-31 | 2011-08-03 | 东莞市中镓半导体科技有限公司 | Method for preparing graphical GaN substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090090930A1 (en) * | 2007-10-05 | 2009-04-09 | Shih-Peng Chen | Epitaxial substrate and manufacturing method thereof and manufacturing method of light emitting diode apparatus |
| CN101599466A (en) * | 2009-07-10 | 2009-12-09 | 中山大学 | Graph substrate that a kind of epitaxial growth is used and preparation method thereof |
| CN101640169A (en) * | 2009-08-21 | 2010-02-03 | 中山大学 | Preparation method of nano patterned substrate used for nitride epitaxial growth |
| CN101807646A (en) * | 2010-03-22 | 2010-08-18 | 徐瑾 | Highly efficient light-emitting diode by using air to form patterned substrate and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378227A (en) * | 2012-04-27 | 2013-10-30 | 南亚光电股份有限公司 | Method for forming patterned sapphire substrate |
| CN104465917A (en) * | 2013-04-01 | 2015-03-25 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
| CN104465917B (en) * | 2013-04-01 | 2017-09-19 | 中国砂轮企业股份有限公司 | Patterned photoelectric substrate and manufacturing method thereof |
| CN108538974A (en) * | 2018-05-15 | 2018-09-14 | 苏州瑞而美光电科技有限公司 | A kind of preparation method of nano patterned Sapphire Substrate |
| CN108538974B (en) * | 2018-05-15 | 2019-12-31 | 苏州瑞而美光电科技有限公司 | Preparation method of nano-scale patterned sapphire substrate |
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