CN110212067A - A kind of GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing - Google Patents
A kind of GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing Download PDFInfo
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- CN110212067A CN110212067A CN201910405644.1A CN201910405644A CN110212067A CN 110212067 A CN110212067 A CN 110212067A CN 201910405644 A CN201910405644 A CN 201910405644A CN 110212067 A CN110212067 A CN 110212067A
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- dimensional chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
The invention discloses a kind of GaN base light emitting semiconductor devices of three-dimensional chamber hyperbolic Meta Materials enhancing, including substrate, GaN epitaxial layer, negative electrode and positive electrode, wherein, GaN epitaxial layer is covered on substrate, three-dimensional chamber is offered on the surface of GaN epitaxial layer, the three-dimensional is intracavitary to be filled with hyperbolic Meta Materials, to form three-dimensional chamber hyperbolic structure, negative electrode is located at the surface of n-GaN, positive electrode is located on transfer substrate or the surface of p-GaN, the light emitting semiconductor device may be implemented in the raising of special spectrum range internal quantum efficiency and light extraction efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of GaN base semiconductor hair of three-dimensional chamber hyperbolic Meta Materials enhancing
Optical device.
Background technique
The light emitting region of III hi-nitride semiconductor material can extend to ultraviolet region from near-infrared region, this makes
It has great application value in the multiclass luminescent device such as illumination, display, optic communication.However nitride semi-conductor material
Excellent properties are fully used not yet, especially high brightness and High Speed Modulation white light LEDs, high resolution display with
And high-performance deep-UV light-emitting device etc., still there is very big development space.This is mainly by high alumina and high indium component material
Device internal quantum efficiency caused by material preparation is difficult is low and the caused light extraction efficiency of high-index material total reflection is lower
Limitation.Solve high In, the internal quantum efficiency of high Al contents LED and light extraction efficiency bottleneck problem have important scientific value and
Technology draw promotes China's scientific research level, captures initiative and future market first chance and have far-reaching significance.
However, traditional structure design and processes method can not be solved these problems preferably, it is badly in need of introducing
New theory and new method.As the Meta Materials of one of world today's emerging technology, not only it is worth with important defense strategy,
Also there is important impetus to the progress of civilian science and technology.The electricity being made of the sub-wavelength structure metal unit of periodic arrangement
Magnetic Meta Materials have the ability of powerful regulation electromagnetic wave, are expected to become the faced problem of the current gallium nitride base light-emitting device of solution
Effective scheme.
To the regulation of the internal quantum efficiency and light extraction efficiency of semiconductor devices essentially namely to carrier
Compound and light propagation regulation.Electromagnetism Meta Materials based on surface phasmon (Surface Plasmon, SP) are a kind of receiving
The method that electromagnetic field is manipulated on metrical scale, can regulate and control the propagation and spontaneous radiation process of light.It is double based on surface phasmon
Great Localized field enhancement can be achieved and to spontaneous radiation process in bent Meta Materials (Hyperbolic Metamaterials, HMM)
Effective control.Using the coupling effect of Quantum Well-surface phasmon (QW-SP), internal quantum efficiency can greatly improve.Closely
Nian Lai has study group to attempt to be applied to HMM structure to improve the internal quantum efficiency of LED, realizes 100 times of Quantum Well spontaneous radiation
Above reinforcing effect.Although internal quantum efficiency is greatly improved, by the limit of light extraction efficiency and QW-SP coupling distance
System, the raising of device performance are not obvious.
Therefore need to design a kind of light emitting semiconductor device, to realize that light emitting semiconductor device is measured within the scope of special spectrum
Sub- efficiency and light extraction efficiency effectively improve, and solve that light extraction efficiency that HMM structure faces is low and QW-SP coupling effect difference
Problem.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art, a kind of three-dimensional chamber hyperbolic Meta Materials enhancing is provided
GaN base light emitting semiconductor device, the light emitting semiconductor device setting spectral region internal quantum efficiency and light extraction efficiency compared with
It is high.
In order to achieve the above objectives, the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing includes negative electrode, just
Electrode and the Sapphire Substrate being sequentially distributed from bottom to top, n-GaN, Quantum Well and p-GaN, wherein the surface of n-GaN or p-
The surface of GaN offers three-dimensional chamber, and the three-dimensional is intracavitary to be filled with hyperbolic Meta Materials, to form three-dimensional chamber hyperbolic structure, negative electricity
Pole is located on n-GaN, and positive electrode is located on p-GaN or shifts on substrate.
In horizontal device structure, positive electrode is located at the top of p-GaN, and three-dimensional chamber is opened in the upper surface of p-GaN, negative electricity
Pole is located at the top of n-GaN.
In the preparation, the preparation of three-dimensional chamber is first carried out, then carries out the preparation of positive electrode and negative electrode, wherein is carved by ICP
The preparation that n-GaN is used for negative electrode is exposed in erosion.
In vertical structure device, positive electrode is located on transfer substrate, and three-dimensional chamber is opened in the surface of p-GaN.
In the preparation, the preparation of three-dimensional chamber is first carried out, then realizes the transfer of transfer substrate by bonding and laser lift-off, three
Dimension chamber is located at the back side of light-emitting surface.
In vertical structure device, positive electrode is located on transfer substrate, and three-dimensional chamber is opened in the surface n-GaN.
In the preparation, it first passes through bonding and laser lift-off realizes the transfer of transfer substrate, then carry out the preparation of three-dimensional chamber, three
Dimension chamber is located at the front of light-emitting surface.
The cross section of three-dimensional chamber is circle, triangle, rectangle or hexagon；
The longitudinal cross-section of three-dimensional chamber is cylindricality, back taper or reverse pyramid.
Spacing between the bottom and Quantum Well of three-dimensional chamber is 50nm-150nm, and the longitudinal size of three-dimensional chamber is 100nm-
150nm。
The hyperbolic Meta Materials are made of metal-dielectric lamination, and the thickness of each layer is in Asia in metal-dielectric lamination
Wavelength magnitude；Wherein, when the GaN base light emitting semiconductor device is applied to ultraviolet or deep ultraviolet band, the metal-dielectric is folded
The material of layer is Al-Al2O3、Ag-Al2O3, Al-AlN or Ag-AlN；When GaN base light emitting semiconductor device is applied to visible light wave
Duan Shi, the material of the metal-dielectric lamination are Ag-SiO2、Au-SiO2、Ag-SiN、Au-SiN、Ag-TiO2、Au-TiO2、
Ag-TiN or Au-TiN.
The invention has the following advantages:
The GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing of the present invention is when specific operation, n-
The surface of GaN or p-GaN offers three-dimensional chamber, and the three-dimensional is intracavitary to be filled with hyperbolic Meta Materials, to form three-dimensional chamber hyperbolic knot
Structure realizes the enhancing of setting spectral region internal quantum efficiency, separately using the characteristic of the hyperbolic Meta Materials high density of states and Local field enhancement
Outside, by the introducing of three-dimensional chamber to improve light extraction efficiency；The present invention can be used for the gallium nitride base light emitting device of all types of, each wave band
Part, the even opto-electronic device of other semiconductor materials, and it is more to be applicable to vertical structure, horizontal structure or inverted structure etc.
Kind device architecture, and two kinds of mode of excitation of optical pumping and electric pump are applicable in.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of embodiment one；
Fig. 2 is the structural schematic diagram of embodiment two；
Fig. 3 is the structural schematic diagram of embodiment three.
Wherein, 11 be Sapphire Substrate, 12 be n-GaN, 13 be active area quantum well structure layer, 14 be p-GaN, 15 for turn
Move substrate, 41 be three-dimensional chamber, 51 be negative electrode, 52 be positive electrode.
Specific embodiment
The invention will be described in further detail with reference to the accompanying drawing:
The GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing of the present invention includes negative electrode 51 and just
Electrode 52 and the Sapphire Substrate 11 being sequentially distributed from bottom to top, n-GaN12, Quantum Well 13 and p-GaN14, wherein n-
The surface of GaN12 or p-GaN14 offers three-dimensional chamber 41, hyperbolic Meta Materials is filled in the three-dimensional chamber 41, to form three-dimensional
Chamber hyperbolic structure, negative electrode 51 are located on n-GaN12, and positive electrode 52 is located on p-GaN14 or shifts on substrate 15.
Spacing between the bottom and Quantum Well 13 of three-dimensional chamber 41 is 50nm-150nm, and the longitudinal size of three-dimensional chamber 41 is
100nm-150nm。
The cross section of three-dimensional chamber 41 is circle, triangle, rectangle or hexagon；The longitudinal cross-section of three-dimensional chamber 41 be cylindricality,
Back taper or reverse pyramid, the longitudinal size of three-dimensional chamber 41 are 100nm-150nm.
The hyperbolic Meta Materials are made of metal-dielectric lamination, and the thickness of each layer is in Asia in metal-dielectric lamination
Wavelength magnitude；Wherein, when the GaN base light emitting semiconductor device is applied to ultraviolet or deep ultraviolet band, the metal-dielectric is folded
The material of layer is Al-Al2O3、Ag-Al2O3, Al-AlN or Ag-AlN；When GaN base light emitting semiconductor device is applied to visible light wave
Duan Shi, the material of the metal-dielectric lamination are Ag-SiO2、Au-SiO2、Ag-SiN、Au-SiN、Ag-TiO2、Au-TiO2、
Ag-TiN or Au-TiN；The thickness of each layer is in sub-wavelength magnitude in the metal-dielectric lamination.
The three-dimensional chamber 41 is prepared in 12 surface of GaN epitaxial layer by dry etching or wet etching, wherein the three-dimensional chamber
41 can prepare in the face p- or the face n- of GaN epitaxial layer, be also possible to light-emitting surface or shady face.
Embodiment one
With reference to Fig. 1, in horizontal device structure, positive electrode 52 is located at the top of p-GaN14, and three-dimensional chamber 41 is opened in p-
The upper surface of GaN14, negative electrode 51 are located at the top of n-GaN12, in the preparation, first carry out the preparation of three-dimensional chamber 41, then carry out
The preparation of positive electrode 52 and negative electrode 51, wherein the preparation exposed n-GaN12 and be used for negative electrode 51 is etched by ICP.
Embodiment two
With reference to Fig. 2, in vertical structure device, positive electrode 52 is located on transfer substrate 15, and three-dimensional chamber 41 is opened in p-GaN14
Surface first carry out the preparation of three-dimensional chamber 41, then turning for transfer substrate 15 is realized by bonding and laser lift-off in the preparation
It moves, three-dimensional chamber 41 is located at the back side of light-emitting surface.
Embodiment three
With reference to Fig. 3, in vertical structure device, positive electrode 52 is located on transfer substrate 15, and three-dimensional chamber 41 is opened in n-GaN12
Surface first passes through bonding and laser lift-off realizes the transfer of transfer substrate 15, then carry out the preparation of three-dimensional chamber 41 in the preparation,
Three-dimensional chamber 41 is located at the front of light-emitting surface.
The present invention can be used for the gallium nitride base light-emitting device of all types of, each wave band, it can also be used to the photoelectricity of semiconductor material
Sub- device；A variety of device architectures such as vertical structure, horizontal structure, inverted structure are applicable to, and to optical pumping and electric pump two
Kind mode of excitation is applicable in.
Claims (10)
1. a kind of GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing, which is characterized in that including negative electrode
(51), positive electrode (52) and the Sapphire Substrate (11) being sequentially distributed from bottom to top, n-GaN (12), Quantum Well (13) and p-
GaN (14), wherein the surface of n-GaN (12) or the surface of p-GaN (14) offer three-dimensional chamber (41), the three-dimensional chamber (41)
Interior to be filled with hyperbolic Meta Materials, to form three-dimensional chamber hyperbolic structure, negative electrode (51) is located on n-GaN (12), positive electrode (52)
On p-GaN (14) or in transfer substrate (15).
2. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In in horizontal device structure, positive electrode (52) is located at the top of p-GaN (14), and three-dimensional chamber (41) is opened in p-GaN's (14)
Upper surface, negative electrode (51) are located at the top of n-GaN (12).
3. the GaN base light emitting semiconductor device of horizontal structure three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 2,
It is characterized in that, in the preparation, first carries out the preparation of three-dimensional chamber (41), then carry out the preparation of positive electrode (52) and negative electrode (51),
Wherein, the preparation exposed n-GaN (12) and be used for negative electrode (51) is etched by ICP.
4. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In in vertical structure device, positive electrode (52) is located in transfer substrate (15), and three-dimensional chamber (41) is opened in the table of (14) p-GaN
Face.
5. the GaN base light emitting semiconductor device of vertical structure three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 4,
It is characterized in that, in the preparation, first carries out the preparation of three-dimensional chamber (41), then transfer substrate (15) is realized by bonding and laser lift-off
Transfer, three-dimensional chamber (41) is located at the back side of light-emitting surface.
6. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In in vertical structure device, positive electrode (52) is located in transfer substrate (15), and three-dimensional chamber (41) is opened in n-GaN (12) surface.
7. the GaN base light emitting semiconductor device of vertical structure three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 6,
It is characterized in that, in the preparation, first passes through bonding and laser lift-off realizes the transfer of transfer substrate (15), then carry out three-dimensional chamber (41)
Preparation, three-dimensional chamber (41) is located at the front of light-emitting surface.
8. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In the cross section of three-dimensional chamber (41) is circle, triangle, rectangle or hexagon；
The longitudinal cross-section of three-dimensional chamber (41) is cylindricality, back taper or reverse pyramid.
9. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In the spacing between the bottom and Quantum Well (13) of three-dimensional chamber (41) is 50nm-150nm, and the longitudinal size of three-dimensional chamber (41) is
100nm-150nm。
10. the GaN base light emitting semiconductor device of three-dimensional chamber hyperbolic Meta Materials enhancing according to claim 1, feature exist
In the hyperbolic Meta Materials are made of metal-dielectric lamination, and the thickness of each layer is in sub-wavelength in metal-dielectric lamination
Magnitude；Wherein, when the GaN base light emitting semiconductor device is applied to ultraviolet or deep ultraviolet band, the metal-dielectric lamination
Material is Al-Al2O3、Ag-Al2O3, Al-AlN or Ag-AlN；When GaN base light emitting semiconductor device is applied to visible light wave range
When, the material of the metal-dielectric lamination is Ag-SiO2、Au-SiO2、Ag-SiN、Au-SiN、Ag-TiO2、Au-TiO2、Ag-
TiN or Au-TiN.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111969085A (en) * | 2020-09-14 | 2020-11-20 | 南京邮电大学 | LED based on patterned substrate and preparation method thereof |
| CN113066909A (en) * | 2021-03-22 | 2021-07-02 | 华南师范大学 | Blue light emitting diode with luminescent efficiency enhanced by metamaterial and preparation method thereof |
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| CN103227254A (en) * | 2013-04-11 | 2013-07-31 | 西安交通大学 | LED photonic crystal containing left-handed material and preparation method |
| CN103325900A (en) * | 2013-05-22 | 2013-09-25 | 中国科学院半导体研究所 | Surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
| CN104051587A (en) * | 2014-06-19 | 2014-09-17 | 中国科学院半导体研究所 | Manufacturing method of surface-plasmon-enhanced GaN-based nanopore LED |
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| US20110233514A1 (en) * | 2010-03-24 | 2011-09-29 | National Cheng Kung University | Surface plasmon enhanced light-emitting diode |
| CN103227254A (en) * | 2013-04-11 | 2013-07-31 | 西安交通大学 | LED photonic crystal containing left-handed material and preparation method |
| CN103325900A (en) * | 2013-05-22 | 2013-09-25 | 中国科学院半导体研究所 | Surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
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| CN113066909A (en) * | 2021-03-22 | 2021-07-02 | 华南师范大学 | Blue light emitting diode with luminescent efficiency enhanced by metamaterial and preparation method thereof |
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