CN101651175A - Semiconductor light-emitting element and method for manufacturing same - Google Patents
Semiconductor light-emitting element and method for manufacturing same Download PDFInfo
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- CN101651175A CN101651175A CN200810147014A CN200810147014A CN101651175A CN 101651175 A CN101651175 A CN 101651175A CN 200810147014 A CN200810147014 A CN 200810147014A CN 200810147014 A CN200810147014 A CN 200810147014A CN 101651175 A CN101651175 A CN 101651175A
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- resilient coating
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Abstract
The invention discloses a semiconductor light-emitting element and a method for manufacturing the same. The semiconductor light-emitting element comprises a substrate, a buffer layer, a multilayer structure and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate and part of the upper surface of substrate is exposed. The multilayer is formed tocover the buffer layer and the exposed upper surface of the substrate. The multilayer structure also comprises a luminous zone. The buffer layer assists in the lateral epitaxy and vertical epitaxy ofthe bottommost layer of the multilayer structure. The ohmic electrode structure is formed on the multilayer structure.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly relate to a kind of semiconductor light-emitting elements that can promote external quantum efficiency and have good brilliant quality of heap of stone.
Background technology
(for example, light-emittingdiode) application is very extensive, and for example illumination and field of remote control etc. are all seen semiconductor light-emitting elements and are widely used for semiconductor light-emitting elements now.In order to allow semiconductor light-emitting elements guarantee higher functional reliability and lower energy resource consumption as much as possible, therefore all need ask the external quantum efficiency (external quantum efficiency) of itself for semiconductor light-emitting elements.
In theory, the external quantum efficiency of semiconductor light emitting component is relevant with itself internal quantum (internal quantum efficiency) and light taking-up efficient (light-extraction efficiency).So-called internal quantum is determined by material behavior and quality.Taking out efficient as for light then is to mean from element internal to be issued to radiation ratio in the surrounding air or the epoxy resin of encapsulation.It is to depend on the loss that is taken place when element internal is left in radiation that light takes out efficient.Cause the one of the main reasons of above-mentioned loss and have high index of refraction (refraction coefficient), cause light to produce total reflection (total reflection) and can't launch at this material surface owing to form the semi-conducting material of the superficial layer of element.
See also Fig. 1.Be to promote the external quantum efficiency of semiconductor light-emitting elements, it is open and be used to make semiconductor light-emitting elements to have a substrate 1 of patterned surface 10.Fig. 1 has shown the schematic diagram of the known sapphire substrate with patterned surface 10 1.The light that patterned surface 10 can be penetrated by semiconductor light-emitting elements in order to scattering further promotes the external quantum efficiency of semiconductor light-emitting elements to reduce total reflection.
In addition, semiconductor material layer (for example, gallium nitride) can be formed on the sapphire substrate 1 of patterned surface 10 by good crystal type laterally of heap of stone.Yet gallium nitride but is not easy directly to grow up on the sapphire substrate 1 of patterned surface 10, promptly vertical brilliant poor effect of heap of stone.Therefore, the quality of the gallium nitride semiconductor material layer of growing up on the sapphire substrate 1 of patterned surface 10 still remains to be improved.
In the prior art, can be between the semiconductor material layer of semiconductor light-emitting elements and the general substrate by forming a resilient coating to improve the quality of semiconductor material layer.Therefore, if the design of this resilient coating can be analogous to the substrate 1 with patterned surface 10, this resilient coating will have the additional function of the external quantum efficiency that promotes semiconductor light-emitting elements.
Therefore, main purpose of the present invention is to provide a kind of semiconductor light-emitting elements that can promote external quantum efficiency and have good brilliant quality of heap of stone, to address the above problem.
Summary of the invention
A purpose of the present invention is to provide a kind of semiconductor light-emitting elements and manufacture method thereof.
According to a specific embodiment of the present invention, this semiconductor light-emitting elements comprises a substrate (substrate), a resilient coating (buffer layer), a sandwich construction (multi-layer structure) and an ohmic electrode structure (ohmic electrode structure).
This resilient coating is optionally to be formed on the upper surface of this substrate, causes this upper surface portion of this substrate to expose.The formation of this sandwich construction is to cover this upper surface that this resilient coating and this substrate expose.This sandwich construction also comprises a luminous zone (light-emitting region).One bottom (bottom-most layer) side direction of auxiliary this sandwich construction of this resilient coating is of heap of stone brilliant and vertical of heap of stone brilliant.This ohmic electrode structure is to be formed on this sandwich construction.
Another specific embodiment according to the present invention is a kind of method of making for semiconductor light emitting component.
This method at first prepares a substrate.Then, this method selectivity forms a resilient coating on a upper surface of this substrate, causes this upper surface portion of this substrate to expose.Then, this method forms a sandwich construction to cover this upper surface that exposes of this resilient coating and this substrate.The bottom side direction crystalline substance of heap of stone that this sandwich construction comprises a luminous zone and auxiliary this sandwich construction of this resilient coating reaches vertical of heap of stone brilliant.At last, this method forms an ohmic electrode structure on this sandwich construction.
Compared to existing technology, optionally form resilient coating on the surface of substrate according to semiconductor light-emitting elements of the present invention.The light that resilient coating can be penetrated by semiconductor light-emitting elements in order to scattering further promotes the external quantum efficiency of semiconductor light-emitting elements to reduce total reflection.In addition, it is vertical of heap of stone brilliant that resilient coating can also provide good side direction crystalline substance of heap of stone to reach, with the of heap of stone brilliant quality of raising semiconductor light-emitting elements.
Can be about the advantages and spirit of the present invention by following detailed Description Of The Invention and appended graphic being further understood.
Description of drawings
Fig. 1 has shown existing schematic diagram with sapphire substrate of patterned surface.
Fig. 2 has shown the semiconductor light emitting component according to a specific embodiment of the present invention.
Fig. 3 A to Fig. 3 I has shown the cross sectional view according to the method for the manufacturing semiconductor light emitting component of another specific embodiment of the present invention.
Embodiment
See also Fig. 2, Fig. 2 is the semiconductor light emitting component 2 that illustrates according to a specific embodiment of the present invention.
As shown in Figure 2, this semiconductor light-emitting elements 2 comprises a substrate 20, a resilient coating 22, a sandwich construction 24 and an ohmic electrode structure 26.
In practical application, this substrate 20 can be sapphire (sapphire), silicon (Si), SiC, GaN, ZnO, ScAlMgO
4, YSZ (Yttria-Stabilized Zirconia), SrCu
2O
2, LiGaO
2, LiAlO
2, GaAs or other similar base materials.
This resilient coating 22 can optionally be formed on the upper surface 200 of this substrate 20, thereby these upper surface 200 parts of this substrate 20 are exposed.The formation of this sandwich construction 24 covers this upper surface 200 that this resilient coating 22 and this substrate 20 expose.This sandwich construction 24 also comprises a luminous zone 242.This resilient coating 22 can assist a bottom 240 side direction of this sandwich construction 24 of heap of stone brilliant and vertical of heap of stone brilliant.In a specific embodiment, this bottom 240 can be gallium nitride (GaN).This ohmic electrode structure 26 is formed on this sandwich construction 24.
In practical application, this resilient coating 22 can be zinc oxide (ZnO), magnesium zinc (Mg
xZn
1-xO), aluminium nitride (AlN) or aluminium oxide (Al
2O
3), 0＜x≤1 wherein.The thickness range of this resilient coating 22 is from 10nm to 500nm.
If this resilient coating 22 is a zinc oxide, the raw material of this zinc bloom buffer layer 22 can be by a ZnCl
2Precursor, a ZnMe
2A precursor and a ZnEt
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
If this resilient coating 22 is magnesium zinc, the raw material of this magnesium zinc resilient coating 22 can be by a ZnCl
2Precursor, a ZnMe
2Precursor, a ZnEt
2Precursor, a MgCp
2A precursor and a Mg (thd)
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
If this resilient coating 22 is aluminium nitride, the raw material of this aluminum nitride buffer layer 22 can be by an AlCl
3Precursor, an AlMe
3Precursor, an AlEt
3Precursor, a Me
3N:AlH
3A precursor and a Me
2EtN:AlH
3Any precursor in the precursor and a NH
3Precursor is formed.
If this resilient coating 22 is aluminium oxide, the raw material of this aluminium oxide resilient coating 22 can be by an AlCl
3Precursor, an AlBr
3Precursor, an AlMe
3A precursor and an AlEt
3Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
In a specific embodiment, this resilient coating 22 can pass through an ald (atomic layerdeposition, ALD) processing procedure, an electricity are starched and are strengthened ald (plasma-enhanced ALD) processing procedure or auxiliary ald (plasma-assisted ALD) the processing procedure formation of an electric slurry, and this resilient coating 22 also can strengthen ald processing procedure or ald processing procedure and an electric slurry by ald processing procedure and electric slurry and assist the combination processing procedure of ald processing procedure to form.
In practical application, the formation of this resilient coating 22 can be carried out under the process temperatures between the room temperature to 1200 ℃ one.This resilient coating 22 can further be carried out annealing in one under the annealing temperature between 400 ℃ to 1200 ℃ after forming.
In another specific embodiment, this resilient coating 22 can also form by a selective etch processing procedure.
See also Fig. 3 A to Fig. 3 I, Fig. 3 A to Fig. 3 I has shown the cross sectional view according to the method for the manufacturing semiconductor light emitting component 2 of another specific embodiment of the present invention.
At first, as shown in Figure 3A, this method prepares a substrate 20.
Then, shown in Fig. 3 B, in a specific embodiment, this method can form a resilient coating 22 on a upper surface 200 of this substrate 20 by an ald processing procedure.Then, shown in Fig. 3 C, this method can optionally form etch resistance layer (for example, photoresistance) on the surface of this resilient coating 22 and carry out a selective etch processing procedure on the surface of this resilient coating 22.Afterwards, shown in Fig. 3 D, this method can selectivity form this resilient coating 22 on this upper surface 200 of this substrate 20, causes these upper surface 200 parts of this substrate 20 to expose.
In another specific embodiment, shown in Fig. 3 E, this method can optionally form etch resistance layer (for example, photoresistance) earlier on the surface 200 of this substrate 20.Then, shown in Fig. 3 F, this method can form this resilient coating 22 on this upper surface 200 of this substrate 20 by an ald processing procedure, an electricity slurry enhancing ald processing procedure or the auxiliary ald processing procedure of an electricity slurry, and this resilient coating 22 also can strengthen ald processing procedure or ald processing procedure and an electricity slurry by ald processing procedure and electric slurry and assist the combination processing procedure of ald processing procedure to form.Afterwards, shown in Fig. 3 G, this method can be peeled off method (lift-off method) by one the etch resistance layer is removed, and optionally to form this resilient coating 22 on this upper surface 200 of this substrate 20, causes these upper surface 200 parts of this substrate 20 to expose.
Then, shown in Fig. 3 H, this method forms a sandwich construction 24 to cover this upper surface 200 that exposes of this resilient coating 22 and this substrate 20, and wherein this sandwich construction 24 comprises a luminous zone 242.This resilient coating 22 can assist a bottom 240 side direction of this sandwich construction 24 of heap of stone brilliant and vertical of heap of stone brilliant.At last, shown in Fig. 3 I, this method is this sandwich construction 24 of etching and form ohmic electrode structure 26 on this sandwich construction 24 optionally.
Compared to existing technology, optionally form resilient coating on the surface of substrate according to semiconductor light-emitting elements of the present invention.The light that resilient coating can be penetrated by semiconductor light-emitting elements in order to scattering further promotes the external quantum efficiency of semiconductor light-emitting elements to reduce total reflection.In addition, it is vertical of heap of stone brilliant that resilient coating can also provide good side direction crystalline substance of heap of stone to reach, with the of heap of stone brilliant quality of raising semiconductor light-emitting elements.
By the detailed description of above preferred embodiment, be to wish to know more to describe feature of the present invention and spirit, and be not to come purpose of the present invention is limited with above-mentioned disclosed preferred embodiment.On the contrary, its objective is that hope can contain in the purpose of claim of being arranged in of various changes and tool equality institute of the present invention desire application.Therefore, the purpose of the claim that the present invention applied for should be done the broadest explanation according to above-mentioned explanation, contains the arrangement of all possible change and tool equality to cause it.
Claims (26)
1. semiconductor light-emitting elements comprises:
One substrate;
One resilient coating, this resilient coating are optionally to be formed on the upper surface of this substrate and this upper surface portion of this substrate is exposed;
One sandwich construction, the formation of this sandwich construction have covered this upper surface that this resilient coating and this substrate expose, and this sandwich construction comprises a luminous zone, and wherein a bottom side direction of auxiliary this sandwich construction of this resilient coating is of heap of stone brilliant and vertical of heap of stone brilliant; And
One ohmic electrode structure, this ohmic electrode structure is formed on this sandwich construction.
2. semiconductor light-emitting elements as claimed in claim 1 is characterized in that, this resilient coating is to be formed by the wherein a kind of material in zinc oxide, magnesium zinc, aluminium nitride and the aluminium oxide.
3. semiconductor light-emitting elements as claimed in claim 2 is characterized in that this bottom is formed by gallium nitride.
4. semiconductor light-emitting elements as claimed in claim 2 is characterized in that the thickness range of this resilient coating is from 10nm to 500nm.
5. semiconductor light-emitting elements as claimed in claim 3, it is characterized in that, this resilient coating strengthens the ald processing procedure by an ald processing procedure, an electricity slurry or the auxiliary ald processing procedure of an electric slurry forms, and this resilient coating also can be starched the combination processing procedure that strengthens ald processing procedure or ald processing procedure and the auxiliary ald processing procedure of an electricity slurry by ald processing procedure and electricity and form.
6. semiconductor light-emitting elements as claimed in claim 4 is characterized in that, this resilient coating also forms by a selective etch processing procedure.
7. semiconductor light-emitting elements as claimed in claim 5 is characterized in that, being formed on of this resilient coating one carried out under the process temperatures between the room temperature to 1200 ℃.
8. semiconductor light-emitting elements as claimed in claim 6 is characterized in that, this resilient coating is further to carry out annealing in one under the annealing temperature between 400 ℃ to 1200 ℃ after forming.
9. semiconductor light-emitting elements as claimed in claim 7 is characterized in that the raw material of this zinc bloom buffer layer is by a ZnCl
2Precursor, a ZnMe
2A precursor and a ZnEt
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
10. semiconductor light-emitting elements as claimed in claim 7 is characterized in that the raw material of this magnesium zinc resilient coating is by a ZnCl
2Precursor, a ZnMe
2Precursor, a ZnEt
2Precursor, a MgCp
2A precursor and a Mg (thd)
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
11. semiconductor light-emitting elements as claimed in claim 7 is characterized in that, the raw material of this aluminum nitride buffer layer is by an AlCl
3Precursor, an AlMe
3Precursor, an AlEt
3Precursor, a Me
3N:AlH
3A precursor and a Me
2EtN:AlH
3Any precursor in the precursor and a NH
3Precursor is formed.
12. semiconductor light-emitting elements as claimed in claim 7 is characterized in that, the raw material of this aluminium oxide resilient coating is by an AlCl
3Precursor, an AlBr
3Precursor, an AlMe
3A precursor and an AlEt
3Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any composition in an electricity slurry and the oxygen radical.
13. semiconductor light-emitting elements as claimed in claim 1 is characterized in that, this substrate is a sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, a zno-based plate, a ScAlMgO
4Substrate, a YSZ (Yttria-Stabilized Zirconia) substrate, a SrCu
2O
2Substrate, a LiGaO
2Substrate, a LiAlO
2Any substrate in a substrate and the GaAs substrate.
14. a method of making semiconductor light emitting component, this method comprises the following step:
Prepare a substrate;
Selectivity forms a resilient coating on a upper surface of this substrate, and this upper surface portion of this substrate is exposed;
Form a sandwich construction to cover this upper surface that exposes of this resilient coating and this substrate, the bottom side direction crystalline substance of heap of stone that this sandwich construction comprises a luminous zone and auxiliary this sandwich construction of this resilient coating reaches vertical of heap of stone brilliant; And
Form an ohmic electrode structure on this sandwich construction.
15. method as claimed in claim 14 is characterized in that, this resilient coating is formed by wherein a kind of material in zinc oxide, magnesium zinc, aluminium nitride and the aluminium oxide.
16. method as claimed in claim 15 is characterized in that, this bottom is formed by gallium nitride.
17. method as claimed in claim 15 is characterized in that, the thickness range of this resilient coating is from 10nm to 500nm.
18. method as claimed in claim 17, it is characterized in that, this resilient coating strengthens the ald processing procedure by an ald processing procedure, an electricity slurry or the auxiliary ald processing procedure of an electric slurry forms, and this resilient coating also can be starched the combination processing procedure that strengthens ald processing procedure or ald processing procedure and the auxiliary ald processing procedure of an electricity slurry by ald processing procedure and electricity and form.
19. method as claimed in claim 17 is characterized in that, this resilient coating also forms by a selective etch processing procedure.
20. method as claimed in claim 18 is characterized in that, being formed on of this resilient coating one carried out under the process temperatures between the room temperature to 1200 ℃.
21. method as claimed in claim 20 is characterized in that, this resilient coating is further carried out annealing in one under the annealing temperature between 400 ℃ to 1200 ℃ after forming.
22. method as claimed in claim 20 is characterized in that, the raw material of this zinc bloom buffer layer is by a ZnCl
2Precursor, a ZnMe
2A precursor and a ZnEt
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
23. method as claimed in claim 20 is characterized in that, the raw material of this magnesium zinc resilient coating is by a ZnCl
2Precursor, a ZnMe
2Precursor, a ZnEt
2Precursor, a MgCp
2A precursor and a Mg (thd)
2Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
24. method as claimed in claim 20 is characterized in that, the raw material of this aluminum nitride buffer layer is by an AlCl
3Precursor, an AlMe
3Precursor, an AlEt
3Precursor, a Me
3N:AlH
3A precursor and a Me
2EtN:AlH
3Any precursor in the precursor and a NH
3Precursor is formed.
25. method as claimed in claim 20 is characterized in that, the raw material of this aluminium oxide resilient coating is by an AlCl
3Precursor, an AlBr
3Precursor, an AlMe
3A precursor and an AlEt
3Any precursor in the precursor and a H
2O precursor, an O
3Precursor, an O
2Any precursor in an electricity slurry and the oxygen radical is formed.
26. method as claimed in claim 14 is characterized in that, this substrate is a sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, a zno-based plate, a ScAlMgO
4Substrate, a YSZ (Yttria-Stabilized Zirconia) substrate, a SrCu
2O
2Substrate, a LiGaO
2Substrate, a LiAlO
2Any substrate in a substrate and the GaAs substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810147014A CN101651175A (en) | 2008-08-12 | 2008-08-12 | Semiconductor light-emitting element and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810147014A CN101651175A (en) | 2008-08-12 | 2008-08-12 | Semiconductor light-emitting element and method for manufacturing same |
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| Publication Number | Publication Date |
|---|---|
| CN101651175A true CN101651175A (en) | 2010-02-17 |
Family
ID=41673354
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810147014A Pending CN101651175A (en) | 2008-08-12 | 2008-08-12 | Semiconductor light-emitting element and method for manufacturing same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826583A (en) * | 2010-04-16 | 2010-09-08 | 武汉希瑞技术有限公司 | Method for preparing patterned sapphire substrate for extension of gallium nitride-based LED |
| CN102569025A (en) * | 2011-01-02 | 2012-07-11 | 昆山中辰矽晶有限公司 | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process |
| CN104319318A (en) * | 2014-10-27 | 2015-01-28 | 中国科学院半导体研究所 | Preparation method for LED patterned substrate with low-refractive-index material |
| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
| CN110828628A (en) * | 2018-08-13 | 2020-02-21 | 首尔伟傲世有限公司 | Light emitting diode having light scattering pattern |
-
2008
- 2008-08-12 CN CN200810147014A patent/CN101651175A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826583A (en) * | 2010-04-16 | 2010-09-08 | 武汉希瑞技术有限公司 | Method for preparing patterned sapphire substrate for extension of gallium nitride-based LED |
| CN102569025A (en) * | 2011-01-02 | 2012-07-11 | 昆山中辰矽晶有限公司 | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process |
| CN102569025B (en) * | 2011-01-02 | 2014-12-24 | 昆山中辰矽晶有限公司 | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process |
| CN104319318A (en) * | 2014-10-27 | 2015-01-28 | 中国科学院半导体研究所 | Preparation method for LED patterned substrate with low-refractive-index material |
| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
| CN108847434B (en) * | 2018-06-27 | 2020-06-30 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for reducing warping of epitaxial wafer |
| CN110828628A (en) * | 2018-08-13 | 2020-02-21 | 首尔伟傲世有限公司 | Light emitting diode having light scattering pattern |
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Application publication date: 20100217 |