CN109192828A - A kind of sapphire compound substrate containing AlN composite construction - Google Patents
A kind of sapphire compound substrate containing AlN composite construction Download PDFInfo
- Publication number
- CN109192828A CN109192828A CN201810948187.6A CN201810948187A CN109192828A CN 109192828 A CN109192828 A CN 109192828A CN 201810948187 A CN201810948187 A CN 201810948187A CN 109192828 A CN109192828 A CN 109192828A
- Authority
- CN
- China
- Prior art keywords
- aln
- sapphire
- composite construction
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 85
- 239000010980 sapphire Substances 0.000 title claims abstract description 85
- 239000002131 composite material Substances 0.000 title claims abstract description 55
- 238000010276 construction Methods 0.000 title claims abstract description 52
- 150000001875 compounds Chemical class 0.000 title claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 52
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 21
- 230000008020 evaporation Effects 0.000 claims abstract description 14
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 3
- 238000000137 annealing Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 239000012495 reaction gas Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000009834 vaporization Methods 0.000 claims description 7
- 230000008016 vaporization Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The present invention proposes a kind of sapphire compound substrate containing AlN composite construction, it includes Sapphire Substrate and the AlN composite construction being deposited in the Sapphire Substrate, and the AlN composite construction includes the first AlN layers be deposited in Sapphire Substrate, the Al being deposited on the first AlN layer2O3Layer and it is deposited on the Al2O3The 2nd AlN layers on layer, the preparation method of the AlN composite construction is one of evaporation, sputtering, atomic layer deposition or multiple combinations, and GaN material quality not only can be improved, and reduces defect concentration, and epitaxial growth efficiency can be improved, practical.
Description
Technical field
The invention belongs to GaN base LED production fields, and in particular to a kind of sapphire composite lining containing AlN composite construction
Bottom.
Background technique
Since GaN base LED has a clear superiority compared to conventional light source, it is used successfully to general illumination, traffic signals
The fields such as instruction, display screen and backlight.Mainly use two kinds of technologies in the epitaxial growth of GaN base LED, substrate technology and outer
Prolong growing technology, wherein substrate technology is crucial.Sapphire Substrate is that largest, economic benefit is most in current large-scale production
Good substrate material, but Sapphire Substrate and GaN material lattice mismatch are big, cause fault in material density high.In order to reduce dislocation
Density, various compound substrates are come into being.Chinese patent CN102637791A is proposed outside a kind of GaN based on AlN ceramic substrate
Prolong chip architecture and preparation method, including AlN ceramic substrate and the buffer layer being grown on AlN ceramic substrate, on the buffer layer
Growth has GaN LED structure layer.The invention uses AlN ceramic substrate, and buffer layer is arranged on AlN ceramic substrate, passes through life
GaN LED structure layer is prepared by MOCVD common process on AlN ceramic substrate after long buffer layer, processing step is simple
It is convenient, GaN LED crystal quality can be greatly improved, but since the AlN ceramic substrate of high quality is difficult to prepare, be difficult to advise greatly
Mould production.
Summary of the invention
The present invention proposes a kind of containing AlN composite construction for deficiency existing for existing sapphire pattern substrate technology
Sapphire compound substrate, substrate of the invention can be improved quality of materials, reduce dislocation density, practical.
The purpose of the present invention is realized by following technical solution:
A kind of sapphire compound substrate containing AlN composite construction, which is characterized in that it includes Sapphire Substrate and sinks
For product in the AlN composite construction in the Sapphire Substrate, the AlN composite construction includes first be deposited in Sapphire Substrate
AlN layers, the Al being deposited on the first AlN layer2O3Layer and it is deposited on the Al2O3The 2nd AlN layers on layer, and it is described
The preparation method of AlN composite construction be evaporation, sputtering, one of atomic layer deposition or multiple combinations.
Further, the Sapphire Substrate is sapphire plane substrate or sapphire pattern substrate.
Further, the described first AlN layers with a thickness of h1,0 < h1 < 200nm.
Further, the Al2O3Layer with a thickness of h2,0 < h2 < 100nm.
Further, the described 2nd AlN layers with a thickness of h3,0 < h3 < 200nm.
Further, which is made up of following step:
(1) using AlN layers of sputtering method preparation the first first on sapphire pattern substrate, with a thickness of 30-80nm, specifically
Growth parameter(s) are as follows: metal Al is target, N2It is respectively reaction gas and working gas, sputtering power 1-2.5KW, sputtering pressure with Ar
Power 4-6mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation of evaporation
Al2O3Layer, with a thickness of 10-40nm, specific growth parameter(s) are as follows: 100-300 DEG C of underlayer temperature, vaporization voltage 6-8KV, evaporate line
50-150mA, evaporating pressure 4E-3~8E-3Pa.
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering side
Method prepares the second AlN layers, with a thickness of 60-100nm, specifically generates parameter are as follows: metal Al is target, N2It is respectively to react with Ar
Gas and working gas, sputtering power 1.5-2.5KW, sputtering pressure 4-8mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature
400-600 DEG C, annealing time 2-15min, annealing atmosphere N2；
(5) by complete make annealing treatment and with AlN composite construction sapphire pattern substrate start the cleaning processing after to get
To the sapphire compound substrate containing AlN composite construction.
Further, which is preferably made up of following step:
(1) specific raw with a thickness of 60nm using AlN layers of sputtering method preparation the first first on sapphire pattern substrate
Long parameter are as follows: metal Al is target, and N2 and Ar are respectively reaction gas and working gas, sputtering power 1.5KW, sputtering pressure
5mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation of evaporation
Al2O3Layer, with a thickness of 30nm, specific growth parameter(s) are as follows: 200 DEG C of underlayer temperature, vaporization voltage 7.5KV, evaporate line 100mA, steam
Send out pressure 6E-3Pa；
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering side
Method prepares the second AlN layers, with a thickness of 80nm, specific growth parameter(s) are as follows: metal Al is target, N2With Ar be respectively reaction gas and
Working gas, sputtering power 2KW, sputtering pressure 4mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature
500 DEG C, annealing time 6min, annealing atmosphere N2；
(5) by complete make annealing treatment and with AlN composite construction sapphire pattern substrate start the cleaning processing after to get
To the sapphire compound substrate containing AlN composite construction.
Beneficial effects of the present invention are as follows:
The present invention is on the basis of existing production Sapphire Substrate, by using AlN composite construction, with existing production skill
Art combines, and further increases quality of materials, reduces dislocation density, practical.
Detailed description of the invention
Fig. 1 is the sapphire compound substrate schematic diagram of the invention containing AlN composite construction.
Specific embodiment
Below according to attached drawing and preferred embodiment the present invention is described in detail, the objects and effects of the present invention will become more clear
Chu, below in conjunction with drawings and examples, the present invention will be described in further detail.It should be appreciated that described herein specific
Embodiment is only used to explain the present invention, is not intended to limit the present invention.
As shown in Figure 1, the present invention proposes a kind of sapphire compound substrate containing AlN composite construction, it is therefore an objective to it is existing
Production technology combines, and further increases quality of materials, reduces dislocation density.
The compound substrate includes Sapphire Substrate and the AlN composite construction being deposited in the Sapphire Substrate, described
AlN composite construction includes the first AlN layers be deposited in Sapphire Substrate, the Al being deposited on the first AlN layer2O3Layer with
And it is deposited on the Al2O3The 2nd AlN layers on layer, and the preparation method of the AlN composite construction is evaporation, sputtering, atom
One of layer deposition or multiple combinations.
It is required to meet large-scale production, the Sapphire Substrate is that sapphire plane substrate or sapphire graphical serve as a contrast
Bottom.
In order to improve quality of materials, the described first AlN layers with a thickness of h1,0 < h1 < 200nm.
In order to reduce the lattice mismatch between Sapphire Substrate and GaN, the Al2O3Layer with a thickness of h2,0 < h2 <
100nm。
In order to improve LED luminous efficiency, the described 2nd AlN layers with a thickness of h3,0 < h3 < 200nm.
Embodiment 1
The present embodiment is AlN layers to be prepared using sputtering method, using evaporation using sapphire pattern substrate as growth substrates
Method prepares Al2O3Layer prepares AlN composite construction, specific preparation side using the growing method that method of evaporating is combined with sputtering method
Method is as follows:
(1) specific raw with a thickness of 60nm using AlN layers of sputtering method preparation the first first on sapphire pattern substrate
Long parameter are as follows: metal Al is target, N2It is respectively reaction gas and working gas, sputtering power 1.5KW, sputtering pressure with Ar
5mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation of evaporation
Al2O3Layer, with a thickness of 30nm, specific growth parameter(s) are as follows: 200 DEG C of underlayer temperature, vaporization voltage 7.5KV, evaporate line 100mA, steam
Send out pressure 6E-3Pa；
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering side
Method prepares the second AlN layers, with a thickness of 80nm, specific growth parameter(s) are as follows: metal Al is target, N2It is respectively reaction gas with Ar
And working gas, sputtering power 2KW, sputtering pressure 4mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature
500 DEG C, annealing time 6min, annealing atmosphere N2；
(5) by complete make annealing treatment and with AlN composite construction sapphire pattern substrate start the cleaning processing after to get
To the sapphire compound substrate containing AlN composite construction.
Embodiment 2
The present embodiment is AlN layers to be prepared using sputtering method, using evaporation using sapphire pattern substrate as growth substrates
Method prepares Al2O3Layer prepares AlN composite construction, specific preparation side using the growing method that method of evaporating is combined with sputtering method
Method is as follows:
(1) specific raw with a thickness of 30nm using AlN layers of sputtering method preparation the first first on sapphire pattern substrate
Long parameter are as follows: metal Al is target, N2It is respectively reaction gas and working gas, sputtering power 1KW, sputtering pressure with Ar
4mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation of evaporation
Al2O3Layer, with a thickness of 10nm, specific growth parameter(s) are as follows: 100 DEG C of underlayer temperature, vaporization voltage 6KV, evaporate line 50mA, evaporation
Pressure 4E-3Pa；
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering side
Method prepares the second AlN layers, with a thickness of 60nm, specific growth parameter(s) are as follows: metal Al is target, N2It is respectively reaction gas with Ar
And working gas, sputtering power 1.5KW, sputtering pressure 4.5mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature
400 DEG C, annealing time 12min, annealing atmosphere N2；
(5) by complete make annealing treatment and with AlN composite construction sapphire pattern substrate start the cleaning processing after to get
To the sapphire compound substrate containing AlN composite construction.
Embodiment 3
The present embodiment is AlN layers to be prepared using sputtering method, using evaporation using sapphire pattern substrate as growth substrates
Method prepares Al2O3Layer prepares AlN composite construction, specific preparation side using the growing method that method of evaporating is combined with sputtering method
Method is as follows:
(1) specific raw with a thickness of 80nm using AlN layers of sputtering method preparation the first first on sapphire pattern substrate
Long parameter are as follows: metal Al is target, N2It is respectively reaction gas and working gas, sputtering power 2.5KW, sputtering pressure with Ar
6mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation of evaporation
Al2O3Layer, with a thickness of 40nm, specific growth parameter(s) are as follows: 300 DEG C of underlayer temperature, vaporization voltage 8KV, evaporate line 150mA, evaporation
Pressure 8E-3Pa；
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering side
Method prepares the second AlN layers, with a thickness of 100nm, specific growth parameter(s) are as follows: metal Al is target, N2It is respectively reaction gas with Ar
Body and working gas, sputtering power 2.5KW, sputtering pressure 6mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature
600 DEG C, annealing time 3min, annealing atmosphere N2；
(5) by complete make annealing treatment and with AlN composite construction sapphire pattern substrate start the cleaning processing after to get
To the sapphire compound substrate containing AlN composite construction.
It will appreciated by the skilled person that being not used to limit the foregoing is merely the preferred embodiment of invention
System invention, although invention is described in detail referring to previous examples, for those skilled in the art, still
It can modify to the technical solution of aforementioned each case history or equivalent replacement of some of the technical features.It is all
Within the spirit and principle of invention, modification, equivalent replacement for being made etc. be should be included within the protection scope of invention.
Claims (7)
1. a kind of sapphire compound substrate containing AlN composite construction, which is characterized in that it includes Sapphire Substrate and deposition
In the AlN composite construction in the Sapphire Substrate, the AlN composite construction includes first be deposited in Sapphire Substrate
AlN layers, the Al being deposited on the first AlN layer2O3Layer and it is deposited on the Al2O3The 2nd AlN layers on layer, and it is described
The preparation method of AlN composite construction be evaporation, sputtering, one of atomic layer deposition or multiple combinations.
2. the sapphire compound substrate according to claim 1 containing AlN composite construction, which is characterized in that described blue precious
Stone lining bottom is sapphire plane substrate or sapphire pattern substrate.
3. the sapphire compound substrate according to claim 1 containing AlN composite construction, which is characterized in that described first
AlN layers with a thickness of h1,0 < h1 < 200nm.
4. the sapphire compound substrate according to claim 1 containing AlN composite construction, which is characterized in that the Al2O3
Layer with a thickness of h2,0 < h2 < 100nm.
5. the sapphire compound substrate according to claim 1 containing AlN composite construction, which is characterized in that described second
AlN layers with a thickness of h3,0 < h3 < 200nm.
6. the sapphire compound substrate according to claim 1 containing AlN composite construction, which is characterized in that the composite lining
Bottom is made up of following step:
(1) specific to grow with a thickness of 30-80nm using AlN layers of sputtering method preparation the first first on sapphire pattern substrate
Parameter are as follows: metal Al is target, N2It is respectively reaction gas and working gas, sputtering power 1-2.5KW, sputtering pressure 4- with Ar
6mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation Al of evaporation2O3
Layer, with a thickness of 10-40nm, specific growth parameter(s) are as follows: 100-300 DEG C of underlayer temperature, vaporization voltage 6-8KV, evaporate line 50-
150mA, evaporating pressure 4E-3~8E-3Pa.
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering method system
Standby 2nd AlN layer, with a thickness of 60-100nm, specifically generate parameter are as follows: metal Al is target, N2It is respectively reaction gas with Ar
And working gas, sputtering power 1.5-2.5KW, sputtering pressure 4-8mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature 400-
600 DEG C, annealing time 2-15min, annealing atmosphere N2；
(5) to get to institute after the sapphire pattern substrate for completing to make annealing treatment and with AlN composite construction being started the cleaning processing
The sapphire compound substrate containing AlN composite construction stated.
7. the sapphire compound substrate according to claim 6 containing AlN composite construction, which is characterized in that the composite lining
Bottom is preferably made up of following step:
(1) using AlN layers of sputtering method preparation the first first on sapphire pattern substrate, with a thickness of 60nm, specific growth ginseng
Number are as follows: metal Al is target, and N2 and Ar are respectively reaction gas and working gas, sputtering power 1.5KW, sputtering pressure
5mTorr；
(2) step (1) is completed and on the first AlN layer of sapphire pattern substrate, using the method preparation Al of evaporation2O3
Layer, with a thickness of 30nm, specific growth parameter(s) are as follows: 200 DEG C of underlayer temperature, vaporization voltage 7.5KV, evaporate line 100mA, vapor pres- sure
Power 6E-3Pa；
(3) step (2) are completed and there is the first AlN layers and Al2O3On the sapphire pattern substrate of layer, using sputtering method system
Standby 2nd AlN layer, with a thickness of 80nm, specific growth parameter(s) are as follows: metal Al is target, N2It is respectively reaction gas and work with Ar
Gas, sputtering power 2KW, sputtering pressure 4mTorr；
(4) sapphire pattern substrate with AlN composite construction is made annealing treatment, design parameter are as follows: annealing temperature 500
DEG C, annealing time 6min, annealing atmosphere N2；
(5) to get to institute after the sapphire pattern substrate for completing to make annealing treatment and with AlN composite construction being started the cleaning processing
The sapphire compound substrate containing AlN composite construction stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810948187.6A CN109192828A (en) | 2018-08-20 | 2018-08-20 | A kind of sapphire compound substrate containing AlN composite construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810948187.6A CN109192828A (en) | 2018-08-20 | 2018-08-20 | A kind of sapphire compound substrate containing AlN composite construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109192828A true CN109192828A (en) | 2019-01-11 |
Family
ID=64919002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810948187.6A Pending CN109192828A (en) | 2018-08-20 | 2018-08-20 | A kind of sapphire compound substrate containing AlN composite construction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109192828A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873056A (en) * | 2019-01-18 | 2019-06-11 | 华灿光电（浙江）有限公司 | The preparation method of the epitaxial wafer of light emitting diode |
| CN109888070A (en) * | 2019-01-22 | 2019-06-14 | 华灿光电（浙江）有限公司 | AlN template, LED epitaxial slice and its manufacturing method |
-
2018
- 2018-08-20 CN CN201810948187.6A patent/CN109192828A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873056A (en) * | 2019-01-18 | 2019-06-11 | 华灿光电（浙江）有限公司 | The preparation method of the epitaxial wafer of light emitting diode |
| CN109873056B (en) * | 2019-01-18 | 2020-09-29 | 华灿光电（浙江）有限公司 | Preparation method of epitaxial wafer of light-emitting diode |
| CN109888070A (en) * | 2019-01-22 | 2019-06-14 | 华灿光电（浙江）有限公司 | AlN template, LED epitaxial slice and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2017121232A1 (en) | Nitride substrate and method for producing the same | |
| CN104037284A (en) | GaN thin film growing on Si substrate and preparation method and applications thereof | |
| CN102212794A (en) | Copper plating substrate-based method for preparing large-area graphene film | |
| CN109192828A (en) | A kind of sapphire compound substrate containing AlN composite construction | |
| CN102208337B (en) | Silicon-base compound substrate and manufacturing method thereof | |
| WO2016011810A1 (en) | Method for preparing nitride semiconductor | |
| CN109285758A (en) | The method of growing nitride film in graph substrate | |
| CN102208338B (en) | Sapphire-base compound substrate and manufacturing method thereof | |
| Wu et al. | Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes | |
| CN103996606B (en) | High-uniformity AlN film growing on sapphire substrate and preparing method and application of high-uniformity AlN film | |
| CN102593294B (en) | Combined type gallium nitride-based semiconductor growth substrates and preparation method thereof | |
| CN102097548A (en) | Method for preparing self-supported GaN-based light emitting diode | |
| CN104659164A (en) | Method for growing photoelectric material and device through two-step method | |
| CN1716653A (en) | GaN light emitting device on ZnO-GaN composite substrate and its preparing method | |
| CN106384763A (en) | Non-polar InGaN/GaN multi-quantum-well nano-pillar and preparation method thereof | |
| Chen et al. | Study of AlN based materials grown on nano-patterned sapphire substrates for deep ultraviolet LED applications | |
| CN208722912U (en) | A kind of AlN sapphire compound substrate | |
| CN101661876A (en) | Method for preparing nitride self-supported substrate | |
| CN103779449A (en) | Composite substrate for growing gallium nitride thin film and preparation method and application thereof | |
| CN207818602U (en) | A kind of sapphire pattern substrate structure with Bragg reflector | |
| CN109411580B (en) | Gallium nitride-based power device and preparation method thereof | |
| CN106229388A (en) | A kind of preparation method of the epitaxial wafer of gallium nitride based light emitting diode | |
| CN103078017A (en) | LED (Light-Emitting Diode) epitaxial structure and preparation method thereof | |
| CN107731971B (en) | Vertical structure LED chip based on photonic crystal and preparation method thereof | |
| CN208722911U (en) | A kind of sapphire compound substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190111 |
|
| WD01 | Invention patent application deemed withdrawn after publication |