CN101661876A - Method for preparing nitride self-supported substrate - Google Patents
Method for preparing nitride self-supported substrate Download PDFInfo
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- CN101661876A CN101661876A CN 200910180531 CN200910180531A CN101661876A CN 101661876 A CN101661876 A CN 101661876A CN 200910180531 CN200910180531 CN 200910180531 CN 200910180531 A CN200910180531 A CN 200910180531A CN 101661876 A CN101661876 A CN 101661876A
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Abstract
The invention discloses a method for preparing nitride self-supported substrate, comprising the steps of: generating nitride membrane by putting foreign substrate into a single crystal furnace; etching grooves at the bottom of the foreign substrate with the nitride membrane, wherein the grooves divide the nitride membrane into a plurality of zones; after etching, washing the foreign substrate withthe nitride membrane, putting the foreign substrate into the single crystal furnace to continually grow and obtain the subsequently grown nitride membrane; and removing the foreign substrate and polishing the subsequently grown nitride membrane to obtain the stripped nitride self-supported substrate. By laser etching the bottom of the initial foreign substrate with one thin layer of the nitride membrane, the method etches the substrate into a plurality of zones with smaller size, is convenient for releasing a part of stress, relieves the affect of the stress to the growth of the nitride, andgrows a low-camber, no-crack and high-quality nitride thick membrane thereon, thereby being convenient for stripping crystal wafer with large size and obtaining the nitride self-supported substrate.
Description
Technical field
The present invention relates to technical field of semiconductor, especially relate to a kind of method for preparing low flexibility, flawless nitride self-supporting substrate.
Background technology
Nitride-based semiconductor is because they itself all are the semi-conducting materials of direct band gap, and energy gap is adjustable from 0.7eV to 6.2eV under the room temperature, is very useful photoelectron material.Nitride series semiconductor not only comprises gallium nitride, but also comprises AlN, InN or the mixed crystal thin film of gallium nitride and AlN, InN is piled up the light-emitting component of formation, but not all general semiconductor that contains nitrogen.Nitride series semiconductor has characteristics such as high temperature resistant, corrosion-resistant, that saturated electrons speed is big, thermal conductance is good, make high temperature and high-power and under adverse circumstances on the background that is widely used during the electronic device of work.But because the fusing point height of nitride, dissociation pressure is big, prepare very difficultly, and one of main difficulty of growing nitride film is to lack the backing material that mates with nitride lattice match and heat.
Foreign substrate commonly used at present is mainly: sapphire, SiC, magnesium aluminate spinel (MgAl
2O
4), LiAlO
2, LiGaO
2, Si and GaAs etc.Sapphire since its mature preparation process, price lower, be easy to clean and handle, and can steady production, but have the characteristic that heat-resisting, transparent large tracts of land obtains, at high temperature having factor such as good stability becomes and is applied to extension nitride backing material the most widely.At present a lot of research groups can grow the GaN thick film that thickness surpasses 200 μ m on sapphire, but wafer bending is serious, can't directly use, and also can't obtain self-supporting GaN substrate with abrasive method.And to obtain the GaN polished silicon wafer substrate of standard, and the thickness of GaN film at least should be greater than 450 μ m, and the GaN thick film that directly growth thickness surpasses 450 μ m on sapphire difficulty very, and wafer is stress and ftractureing often.Because the difference of thermal expansion coefficients of sapphire and nitride is bigger, after growth ending was reduced to room temperature, wafer was bent downwardly, and the thick more bending of GaN film thickness is big more, and wafer size macrobending more is big more.At present main solution is a resilient coating such as growing AIN on substrates such as sapphire, or adds the degree of not matching that mask reduces nitride and foreign substrate.Do the crystal mass that can effectively improve nitride like this, but the most methods complex process can not be given full play to the superior function of nitride semi-conductor material.
Summary of the invention
The invention provides a kind of method for preparing low flexibility, flawless nitride self-supporting substrate.In order to solve the preparation nitride complex process that exists in the prior art, can not give full play to the problem of the superior function of nitride semi-conductor material.
For reaching the foregoing invention purpose, the invention provides a kind of method for preparing nitride self-supporting substrate, said method comprising the steps of:
With foreign substrate growing nitride film in single crystal growing furnace;
Have the foreign substrate bottom of nitride film to carry out the groove etching to growth, described groove is divided into several zones with described foreign substrate bottom;
Etching is cleaned the foreign substrate that described growth has nitride film after finishing, and puts back to continued growth in the single crystal growing furnace then, obtains the nitride film of subsequent growth;
Remove described foreign substrate, the nitride film of subsequent growth is carried out polishing, the nitride self-supporting substrate after obtaining to peel off.
Wherein, adopt the method for the hydride gas-phase epitaxy described nitride film of growing.
Wherein, adopt the method for the metal organic chemical vapor deposition described nitride film of growing.
Wherein, the thickness of described nitride film is between 20～200 μ m.
Wherein, adopt the laser ablation technology to have the foreign substrate bottom of nitride film to carry out the groove etching to growth.
Wherein, described groove is square, circle hole shape or cellular.
Wherein, described groove is square, and depth of groove is greater than 20 μ m, less than the thickness of described foreign substrate.
Wherein, described recess width is between 10～500 μ m.
Wherein, the spacing of described groove is 1～10mm.
Wherein, adopt laser lift-off or abrasive method to remove described foreign substrate.
Beneficial effect of the present invention is as follows:
The present invention carries out laser ablation by the initial foreign substrate bottom that growth is had the skim nitride film, substrate etching is become the less zone of numerous sizes, be convenient to the release of a part of stress, alleviated the influence of stress to nitride growth, flexibility, flawless high-quality nitride thick film are hanged down in growth thereon again, be convenient to large-sized wafer like this and peel off, obtain nitride self-supporting substrate.
Description of drawings
Fig. 1 is a kind of flow chart for preparing nitride self-supporting substrate approach in the embodiment of the invention;
Fig. 2 is a kind of step schematic diagram for preparing nitride self-supporting substrate in the embodiment of the invention;
Fig. 3 is the square groove structural representation on the Sapphire Substrate after the etching in the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, does not limit the present invention.
In the process of nitride film growth, because the lattice match of substrate and thin-film material is relatively poor, when growing into certain thickness, film can bend owing to the influence of base pressure and top tension force, simultaneously because stress can't discharge and can make film crackle occur.Perplexed peel off, the carrying out of subsequent technique such as polishing.Present embodiment is for overcoming the above problems, adopted following technical solution: adopt two one-step growth nitride, the first step is the growing nitride thin layer on initial substrate, then substrate is taken out single crystal growing furnace, utilize laser substrate etching to be become the zone of numerous reduced sizes, alleviate the component of stress, again substrate is brought back continued growth in the stove, thereby can obtain low flexibility, the low flawless nitride self-supporting of dislocation substrate.
In conjunction with Fig. 1～Fig. 3, being elaborated of the technical scheme of the preparation nitride self-supporting substrate approach that present embodiment is related to, concrete steps are as follows:
Step 1, with initial foreign substrate a1 growing nitride film a2 in single crystal growing furnace, grow into certain thickness after, substrate is taken out in cooling.Growing nitride film can adopt HVPE (Hydride VaporPhase Epitaxy, hydride gas-phase epitaxy), MOCVD methods such as (Metal Organic Chemical VaporDeposition, metal organic chemical vapor depositions) to carry out; The nitride film a2 certain thickness of growing can be between 20～200 μ m, promptly film also do not take place crackle and crooked hour, just to stop growing.
Step 2 adopts the laser ablation technology etching to be carried out in initial foreign substrate a1 bottom, the substrate bottom groove a3 behind the formation laser ablation; Substrate bottom groove a3 can all can for square, circle hole shape, minute recesses such as cellular; When being square groove, the degree of depth is between 20 μ m～substrate thickness, and between etching groove width 10～500 μ m, spacing is 1～10mm.
Step 3 after etching finishes, is cleaned, and puts back to continued growth in the single crystal growing furnace, obtains the high-quality nitride thick film a4 of subsequent growth;
Step 4 adopts laser lift-off or abrasive method to remove initial foreign substrate a1;
Step 5 is carried out polishing to thick film, the nitride self-supporting substrate a5 after obtaining to peel off.
Be example with the Sapphire Substrate below, this example operation method specifically may further comprise the steps:
1, sapphire is cleaned up after, put into single crystal growing furnace and be heated to 850 ℃～1050 ℃, after nitrogenize, the nucleation, the growth 20～200 μ m thickness nitride film;
2, take out the sapphire that growth has nitride film from single crystal growing furnace, utilize the laser ablation method etching square groove on the sapphire: etching the degree of depth on Sapphire Substrate is 100 μ m, groove width 100 μ m, and spacing is the square groove of 1mm;
3, after etching finishes, after sapphire cleaned up, put into single crystal growing furnace relaying temperature of continuing rising, growth second layer low-dislocation-density also has the nitride thick film of less stress;
4, grind, obtain the nitride thick film;
5, thick film is carried out polishing both surfaces, obtain the self-supporting nitride.
As can be seen from the above-described embodiment, the present invention is based on the more little fact of the more little bending of wafer size, having proposed has the initial foreign substrate bottom of skim nitride film to carry out laser ablation to growth, substrate etching is become the less zone of numerous sizes, be convenient to the release of a part of stress, alleviated the influence of stress to nitride growth, the thicker nitride film of growing thereon again, and then obtain low flexibility, flawless high-quality nitride self-supporting substrate.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1, a kind of method for preparing nitride self-supporting substrate is characterized in that, said method comprising the steps of:
With foreign substrate growing nitride film in single crystal growing furnace;
Have the foreign substrate bottom of nitride film to carry out the groove etching to growth, described groove is divided into several zones with described foreign substrate bottom;
Etching is cleaned the foreign substrate that described growth has nitride film after finishing, and puts back to continued growth in the single crystal growing furnace then, obtains the nitride film of subsequent growth;
Remove described foreign substrate, the nitride film of subsequent growth is carried out polishing, the nitride self-supporting substrate after obtaining to peel off.
2, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, adopts the method for the hydride gas-phase epitaxy described nitride film of growing.
3, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, adopts the method for the metal organic chemical vapor deposition described nitride film of growing.
4, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, the thickness of described nitride film is between 20～200 μ m.
5, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, adopts the laser ablation technology to have the foreign substrate bottom of nitride film to carry out the groove etching to growth.
6, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, described groove is square, circle hole shape or cellular.
7, the method for preparing nitride self-supporting substrate as claimed in claim 6 is characterized in that, described groove is square, and depth of groove is greater than 20 μ m, less than the thickness of described foreign substrate.
8, the method for preparing nitride self-supporting substrate as claimed in claim 7 is characterized in that, described recess width is between 10～500 μ m.
9, the method for preparing nitride self-supporting substrate as claimed in claim 8 is characterized in that, the spacing of described groove is 1～10mm.
10, the method for preparing nitride self-supporting substrate as claimed in claim 1 is characterized in that, adopts laser lift-off or abrasive method to remove described foreign substrate.
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| CN2009101805312A CN101661876B (en) | 2009-10-19 | 2009-10-19 | Method for preparing nitride self-supported substrate |
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| CN2009101805312A CN101661876B (en) | 2009-10-19 | 2009-10-19 | Method for preparing nitride self-supported substrate |
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| CN101661876A true CN101661876A (en) | 2010-03-03 |
| CN101661876B CN101661876B (en) | 2011-10-26 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074676A (en) * | 2012-09-13 | 2013-05-01 | 中国电子科技集团公司第四十六研究所 | Edge protection method for achieving growth of semiconductor material having self-peeling function |
| CN103247725A (en) * | 2012-02-08 | 2013-08-14 | 郭磊 | Semiconductor structure and forming method thereof |
| WO2013117153A1 (en) * | 2012-02-08 | 2013-08-15 | Lei Guo | Semiconductor structure and method for forming same |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| CN112642746A (en) * | 2020-12-04 | 2021-04-13 | 福建华佳彩有限公司 | Mask strip classification device and mask strip classification method |
| WO2022017462A1 (en) * | 2020-07-23 | 2022-01-27 | 乂馆信息科技(上海)有限公司 | Method for preparing self-supporting substrate |
| CN115386849A (en) * | 2022-08-24 | 2022-11-25 | 哈尔滨工业大学（深圳） | Two-dimensional self-supporting metal material, preparation method thereof and strain sensor |
-
2009
- 2009-10-19 CN CN2009101805312A patent/CN101661876B/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247725A (en) * | 2012-02-08 | 2013-08-14 | 郭磊 | Semiconductor structure and forming method thereof |
| WO2013117153A1 (en) * | 2012-02-08 | 2013-08-15 | Lei Guo | Semiconductor structure and method for forming same |
| CN103074676A (en) * | 2012-09-13 | 2013-05-01 | 中国电子科技集团公司第四十六研究所 | Edge protection method for achieving growth of semiconductor material having self-peeling function |
| CN108598036A (en) * | 2018-06-26 | 2018-09-28 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride device manufacturing method |
| WO2022017462A1 (en) * | 2020-07-23 | 2022-01-27 | 乂馆信息科技(上海)有限公司 | Method for preparing self-supporting substrate |
| EP4170698A4 (en) * | 2020-07-23 | 2023-11-15 | Yiguan Information Technology (Shanghai) Co., Ltd | Method for preparing self-supporting substrate |
| CN112642746A (en) * | 2020-12-04 | 2021-04-13 | 福建华佳彩有限公司 | Mask strip classification device and mask strip classification method |
| CN115386849A (en) * | 2022-08-24 | 2022-11-25 | 哈尔滨工业大学（深圳） | Two-dimensional self-supporting metal material, preparation method thereof and strain sensor |
| CN115386849B (en) * | 2022-08-24 | 2023-12-05 | 哈尔滨工业大学（深圳） | Two-dimensional self-supporting metal material, preparation method thereof and strain sensor |
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| CN101661876B (en) | 2011-10-26 |
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