CN102290498A - Method for manufacturing LED (light-emitting diode) capable of generating white light by plane fluorescent powder of chip step - Google Patents

Method for manufacturing LED (light-emitting diode) capable of generating white light by plane fluorescent powder of chip step Download PDF

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Publication number
CN102290498A
CN102290498A CN2011101415728A CN201110141572A CN102290498A CN 102290498 A CN102290498 A CN 102290498A CN 2011101415728 A CN2011101415728 A CN 2011101415728A CN 201110141572 A CN201110141572 A CN 201110141572A CN 102290498 A CN102290498 A CN 102290498A
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China
Prior art keywords
fluorescent powder
fluorescent material
fluorescent
white light
epitaxial wafer
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Pending
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CN2011101415728A
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Chinese (zh)
Inventor
高成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gcl Photoelectric Technology (zhangjiagang) Co Ltd
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Gcl Photoelectric Technology (zhangjiagang) Co Ltd
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Application filed by Gcl Photoelectric Technology (zhangjiagang) Co Ltd filed Critical Gcl Photoelectric Technology (zhangjiagang) Co Ltd
Priority to CN2011101415728A priority Critical patent/CN102290498A/en
Publication of CN102290498A publication Critical patent/CN102290498A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a method for manufacturing an LED (light-emitting diode) capable of generating white light by plane fluorescent powder of a chip step, which comprises the following steps of: a, providing an epitaxial wafer manufactured with LED grains and electrodes; b, ensuring the epitaxial wafer to correspond to a die coated with the fluorescent powder; c, ensuring the die to be in contact with the surface of the epitaxial wafer by matching the die with a printing method; and d, printing the fluorescent powder on the die on the surfaces of the LED grains. The positions on the die, which correspond to the electrodes, are not coated with the fluorescent powder, so that the electrodes of the epitaxial wafer cannot be covered by the fluorescent powder. The fluorescent powder can have micron-sized or nanometer-sized printing density and can be further limited on light emitting surfaces of the LED grains. Therefore, the covering position and area of the fluorescent powder can be accurately controlled, and the method is easy to operate.

Description

The plane fluorescent powder of making the chip rank produces the method for white light LEDs
Technical field
The present invention relates to a kind of technical field of making light-emitting diode, be meant that especially a kind of plane fluorescent powder of making the chip rank produces the method for white light LEDs.
Background technology
General light-emitting diode can utilize crystal-bonding adhesive with the luminescence chip fixation in the middle of a carrier that is preset with pit shape supporting part, and utilize gold thread to constitute linking of this luminescence chip and electrode tip, and utilize fluorescent glue that luminescence chip is coated with fluorescent material material.Under luminescence chip energising effect, the fluorescent material material of the light source activation fluorescent glue of luminescence chip is to form the photochromic of expection.
The coverage mode of fluorescent glue mostly is a glue greatly and draws the glue mode; It is after fluorescent material material and colloid are mixed mutually with certain proportion, to flow in the plastic pin tube, utilizes point gum machine then and the X-Y displacement mechanism makes point or linear draws glue, coats on the luminescence chip in order to the colloid that will contain the fluorescent material material.Yet the phosphor gel amount is difficult for accurately control, easily causes to form the photochromic of expection, and problem such as the wayward easy generation off normal in colloid position.
For example Chinese patent CN201315322 discloses a kind of light-emitting diode assembly, and it comprises support, place light-emitting diode die on the support, be distributed in the protection that the phosphor powder layer that applies on primer layer, light-emitting diode die and the primer layer around the light-emitting diode die and phosphor powder layer have outward and get photosphere.Described primer layer is cylindrical solid-state or colloidal state film, is evenly distributed on around the light-emitting diode chip for backlight unit.The configuration mode of the fluorescent glue of case is some glue mode before this patent.
Chinese patent CN1960013 discloses a kind of manufacturing method for LED in addition, it is to utilize the crystal-bonding adhesive fixation on carrier in the default pit shape supporting part luminescence chip, and be provided with the conducting channel of different electrodes at the substrate of supporting part periphery, after utilizing gold thread to constitute the connection of luminescence chip and each conducting channel, in supporting part, utilize the spray printing mode again, the fluorescent glue that covering is mixed by fluorescent material material and colloid, last and transparent housing is set on fluorescent glue, to form a light-emitting diode; Structure is in view of the above utilized the mode of nozzle spray printing fluorescent glue, and not only faster production can significantly promote its production capacity, and can accurately control the spray printing scope fluorescent glue evenly is covered in the supporting part.
Summary of the invention
The purpose of this invention is to provide the method that a kind of plane fluorescent powder of making the chip rank produces white light LEDs, its have easy control fluorescent material the amount of covering, covering the position, and possess and make effect fast.
For achieving the above object, the technical solution adopted in the present invention is as follows:
A., an epitaxial wafer that has been manufactured with LED crystal grain and electrode is provided;
B. corresponding one of epitaxial wafer has been coated with the mould that is equipped with fluorescent material;
C. with mould collocation printing means, mould is contacted with this epitaxial wafer surface;
D. the fluorescent material on the mould is printed on the LED grain surface.
In implementing measure of the present invention:
Described mould is not coated with fluorescent material in the position of counter electrode, and each electrode on the epitaxial wafer can not covered by fluorescent material by this.
The printing density of described fluorescent material (containing glue) can be micron order or nano level printing density.
Described fluorescent material can be limited to be printed on the light-emitting area of LED crystal grain.
Described printing means comprises and is selected from impression, spray printing, transfer printing, screen painting.
Described phosphor material powder is selected from aluminate fluorescent powder, silicate fluorescent powder, Nitride phosphor, sulphide fluorescent material, oxynitrides fluorescent material.
The invention has the advantages that:
1. because use the printing mode, so easy and simple to handle and can walk to produce fast.
2. because use the printing mode, so printing position and printing amount are controlled easily; In other words, can control fluorescent material accurately and not cover on electrode, and the light-emitting area that fluorescent material can be limited in LED.
Description of drawings
Fig. 1 is applied to the schematic diagram of epitaxial wafer for the present invention;
Fig. 2 is the schematic diagram of a LED crystal grain of the present invention;
Fig. 3 is a manufacture method calcspar of the present invention;
Fig. 4 prints the schematic diagram of fluorescent material in light-emitting area for the present invention.
Embodiment
Below, enumerate preferred embodiment and conjunction with figs. and describe in detail promptly according to purpose of the present invention, effect and structure configuration.
Fig. 1 is the floor map that is applied to epitaxial wafer 10 of the present invention.Be the mat a plurality of LED crystal grain 12 of crystals growth of heap of stone on epitaxial wafer 10, and possess two electrodes 14 and 16 on each LED crystal grain 12.
Fig. 2 is the schematic diagram of a LED crystal grain 12, can cover layer of fluorescent powder 20 on the surface of this LED crystal grain 12.This fluorescent material 20 is evenly to mix with colloid, so can be attached to the surface of LED crystal grain 12.Using fluorescent material 20 is in order to make LED crystal grain 12 after being subjected to driven by power, can excitated fluorescent powder 20 to form the photochromic of expection.
And it should be noted that fluorescent material 20 can not coated electrode 14 and 16, electrode 14 and 16 is linked with the plain conductor (not shown) smoothly and accept electric power.
In the disclosed in addition structure, fluorescent material (containing glue) the 20th utilizes the printing mode to be made in LED crystal grain 12 surfaces.
The present invention is printed on opportunity on LED crystal grain 20 surfaces with fluorescent material 20, can be to finish before being made into the stage of led chip.
Visually in addition expect to form photochromic and change the composition of led chip and fluorescent material.For example form near going out of white light effect photochromicly, can use the blue led chip, and use to be stimulated and produce the fluorescent material of gold-tinted; Or the mixing of two kinds of coloured light of other forms or three kinds of coloured light.
See also Fig. 3, disclosed manufacture method comprises following steps:
Step S32 provides an epitaxial wafer that has been manufactured with LED crystal grain and electrode;
Step S34 is that corresponding one of above-mentioned epitaxial wafer has been coated with the mould that is equipped with fluorescent material; For example above-mentioned epitaxial wafer is put on another suitable mould or tool;
Step S36 with mould collocation printing means, makes mould contact with this epitaxial wafer surface;
Step S38, the fluorescent material on the mould is printed on the LED grain surface.
Be coated with fluorescent material though it should be noted that above-mentioned printing mould, then needn't apply fluorescent material in the position of counter electrode; Thus, when mould is contacted with the epitaxial wafer surface with printing means, can guarantee that electrode can not covered by fluorescent material.Moreover the printing density of above-mentioned fluorescent material (containing glue) can be micron order or nano level printing density.
What yet the present invention adopted is the printing mode, can accurately control the fluorescent material amount when printing and print the position.Printing means is to comprise impression, spray printing, transfer printing and screen painting, or other mode of printing.
See also Fig. 4, fluorescent material amount in the time of can accurately controlling printing based on the present invention and printing position add that the coloured light that LED crystal grain 12 is sent needs in order to excitated fluorescent powder 20, so fluorescent material 20 can only be printed on the light-emitting area 18.
Phosphor material powder can be selected from aluminate fluorescent powder, silicate fluorescent powder, Nitride phosphor, sulphide fluorescent material, oxynitrides fluorescent material.
The above is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (6)

1. a method of making the plane fluorescent powder generation white light LEDs on chip rank is characterized in that, comprising:
A., an epitaxial wafer that has been manufactured with LED crystal grain and electrode is provided;
B. corresponding one of epitaxial wafer has been coated with the mould that is equipped with fluorescent material;
C. with mould collocation printing means, mould is contacted with this epitaxial wafer surface; And
D. the fluorescent material on the mould is printed on the LED grain surface.
2. the plane fluorescent powder on making chip as claimed in claim 1 rank produces the method for white light LEDs, and it is characterized in that: the position of this mould counter electrode is not coated with fluorescent material, and each electrode on the epitaxial wafer can not covered by fluorescent material by this.
3. the plane fluorescent powder on making chip as claimed in claim 1 rank produces the method for white light LEDs, and it is characterized in that: the printing density of this fluorescent material can be micron order or nano level printing density.
4. the plane fluorescent powder on making chip as claimed in claim 1 rank produces the method for white light LEDs, and it is characterized in that: the fluorescent material on the mould is printed on the LED grain surface, is fluorescent material is limited on the light-emitting area of LED crystal grain.
5. the plane fluorescent powder on making chip as claimed in claim 1 rank produces the method for white light LEDs, it is characterized in that: printing means comprises and is selected from impression, spray printing, transfer printing and screen painting.
6. the plane fluorescent powder on making chip as claimed in claim 1 rank produces the method for white light LEDs, and it is characterized in that: phosphor material powder is selected from aluminate fluorescent powder, silicate fluorescent powder, Nitride phosphor, sulphide fluorescent material, oxynitrides fluorescent material.
CN2011101415728A 2011-05-27 2011-05-27 Method for manufacturing LED (light-emitting diode) capable of generating white light by plane fluorescent powder of chip step Pending CN102290498A (en)

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Application Number Priority Date Filing Date Title
CN2011101415728A CN102290498A (en) 2011-05-27 2011-05-27 Method for manufacturing LED (light-emitting diode) capable of generating white light by plane fluorescent powder of chip step

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104485412A (en) * 2014-11-18 2015-04-01 华中科技大学 Coating method of fluorescent powder glue
CN108537800A (en) * 2018-03-22 2018-09-14 华南理工大学 A kind of dividing method of the micro- coating zone of high-power white-light LED fluorescent powder

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1960013A (en) * 2005-11-02 2007-05-09 李洲科技股份有限公司 Method for fabricating luminous body with two poles
CN101099964A (en) * 2006-07-07 2008-01-09 明达光电(厦门)有限公司 LED chip surface fluorescent powder layer coating method
CN101320772A (en) * 2008-07-15 2008-12-10 电子科技大学 Preparation for LED packaged fluorescent powder dispersoid and ink-jet printing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1960013A (en) * 2005-11-02 2007-05-09 李洲科技股份有限公司 Method for fabricating luminous body with two poles
CN101099964A (en) * 2006-07-07 2008-01-09 明达光电(厦门)有限公司 LED chip surface fluorescent powder layer coating method
CN101320772A (en) * 2008-07-15 2008-12-10 电子科技大学 Preparation for LED packaged fluorescent powder dispersoid and ink-jet printing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104485412A (en) * 2014-11-18 2015-04-01 华中科技大学 Coating method of fluorescent powder glue
CN104485412B (en) * 2014-11-18 2017-12-12 华中科技大学 A kind of painting method of phosphor gel
CN108537800A (en) * 2018-03-22 2018-09-14 华南理工大学 A kind of dividing method of the micro- coating zone of high-power white-light LED fluorescent powder
CN108537800B (en) * 2018-03-22 2021-08-06 华南理工大学 Segmentation method of high-power white light LED fluorescent powder micro-coating area

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Application publication date: 20111221