TW201518088A - Laminate body and method for producing light-emitting device using the same - Google Patents

Laminate body and method for producing light-emitting device using the same Download PDF

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Publication number
TW201518088A
TW201518088A TW103138281A TW103138281A TW201518088A TW 201518088 A TW201518088 A TW 201518088A TW 103138281 A TW103138281 A TW 103138281A TW 103138281 A TW103138281 A TW 103138281A TW 201518088 A TW201518088 A TW 201518088A
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light
phosphor sheet
phosphor
led wafer
support substrate
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TW103138281A
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Chinese (zh)
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TWI659834B (en
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Kazunari Kawamoto
Tetsuya Yamamoto
Takeshige Ohzeki
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Toray Industries
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/40Layered products comprising a layer of synthetic resin comprising polyurethanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54Yield strength; Tensile strength
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/0041Devices characterised by their operation characterised by field-effect operation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Luminescent Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

A purpose of the invention is to provide a laminate body, wherein a fluorescent sheet is formed on a topside surface and a side surface of an LED chip in good followability and uniform film thickness. Besides, a purpose of the invention is to provide a method for producing a light-emitting device, wherein the laminate body is used, a method of high production is used, and the topside surface and the side surface of the LED chip is covered by the fluorescent sheet. The laminate body of the invention includes a support substrate and the fluorescent sheet containing a fluorescent body and a resin. A rupture elongation of the support substrate obtained by a tensile test at 23 DEG C is 200% or more, and Young's modulus of the support substrate at 23 DEG C is 600 MPa or less.

Description

積層體及使用其的發光裝置的製造方法 Laminated body and method of manufacturing the same using the same

本發明是有關於一種包含含有螢光體及樹脂的螢光體片材的積層體。更詳細而言,是有關於一種包含用以將源自LED晶片的上表面及側面的發光波長進行轉換的螢光體片材的積層體。 The present invention relates to a laminate comprising a phosphor sheet containing a phosphor and a resin. More specifically, it relates to a laminate including a phosphor sheet for converting an emission wavelength derived from an upper surface and a side surface of an LED wafer.

發光二極體(Light Emitting Diode,LED)以其發光效率的顯著提高為背景,以低的消耗電力、高壽命、設計性等作為特長,於面向液晶顯示器(Liquid Crystal Display,LCD)的背光源,或於不僅面向車的頭燈等車載領域,而且面向一般照明的方面,均急遽擴大市場。 Light Emitting Diode (LED) is based on the background of its significant improvement in luminous efficiency. It is characterized by low power consumption, high lifetime, design, etc., and is suitable for backlights for liquid crystal displays (LCDs). Or in the automotive field, not only for headlights for cars, but also for general lighting, they are eager to expand the market.

LED根據其安裝型式而分類為側位型、垂直型以及倒裝晶片型,就可提高亮度以及放熱性優異的方面而言,倒裝晶片型LED受到關注。然而,於倒裝晶片型LED中利用現有的分配方式的密封中,存在如下課題:無法於晶片的上表面與側面之間使螢光體層的厚度一致,會產生發光色的方位不均。 The LEDs are classified into a lateral type, a vertical type, and a flip chip type according to the mounting type thereof, and flip chip type LEDs have attracted attention in terms of improving brightness and excellent heat dissipation. However, in the sealing using the conventional distribution method in the flip chip type LED, there is a problem in that the thickness of the phosphor layer cannot be made uniform between the upper surface and the side surface of the wafer, and uneven orientation of the luminescent color occurs.

針對該課題,提出有將含有螢光體的片材即螢光體片材追隨性良好且均勻地貼附於晶片周圍的技術(例如參照專利文獻1~專利文獻2)。專利文獻1為如下方法:使用形成有較LED晶片大一圈的凹部的加壓構件,於LED晶片的側面貼附螢光體片材。另外,專利文獻2為如下方法:進行將包含支持基材及螢光體片材的積層體載置於LED晶片上,將其於真空狀態下利用隔膜進行加壓的第1階段的貼附步驟,然後去除支持基材,進而經過藉由非接觸加壓的第2階段的貼附步驟,於LED晶片側面貼附螢光體片材。 In response to this problem, there has been proposed a technique in which a phosphor sheet, which is a sheet containing a phosphor, has good followability and is uniformly attached to the periphery of the wafer (see, for example, Patent Document 1 to Patent Document 2). Patent Document 1 is a method of attaching a phosphor sheet to a side surface of an LED wafer by using a pressing member formed with a concave portion that is slightly larger than the LED wafer. Further, Patent Document 2 is a first step of attaching a laminate in which a support substrate and a phosphor sheet are placed on an LED wafer and pressurizing the separator in a vacuum state. Then, the support substrate is removed, and the phosphor sheet is attached to the side of the LED wafer via the second stage attachment step by non-contact press.

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2011-138831號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-138831

[專利文獻2]國際公開第2012/023119號 [Patent Document 2] International Publication No. 2012/023119

然而,專利文獻1的方法由於必須在每次LED的種類改變時重新製作作為加壓構件的模具,故而經濟性差。另外,由於使加壓構件與螢光體片材接觸而按壓,故而會產生片材的損傷或加壓構件的污染而生產性差等課題。 However, in the method of Patent Document 1, since it is necessary to reproduce the mold as the pressing member every time the type of the LED is changed, the economy is poor. In addition, since the pressing member is pressed against the phosphor sheet, there is a problem that the sheet is damaged or the pressing member is contaminated, and the productivity is poor.

另外,專利文獻2的方法僅於第一階段的隔膜加壓步驟中,由於支持基材的柔軟性不足而使螢光體片材無法追隨晶片側面,故而暫時恢復為大氣壓而去除支持基材後進行第二階段的非 接觸加壓步驟,就生產性的觀點而言存在課題。 Further, in the method of Patent Document 2, only the phosphor sheet is not able to follow the side surface of the wafer due to insufficient flexibility of the support substrate in the first step of the diaphragm pressurization step, so that the support substrate is removed after temporarily returning to atmospheric pressure. Carry out the second phase of non- The contact pressurization step has a problem in terms of productivity.

本發明的目的在於提供一種於LED晶片的上表面及側面,追隨性良好且以均勻的膜厚形成螢光體片材的積層體。另外,提供一種發光裝置的製造方法,其使用所述積層體,利用生產性高的方法,將LED晶片的上表面及側面以螢光體片材進行被覆。 An object of the present invention is to provide a laminate in which the phosphor sheet is formed on the upper surface and the side surface of the LED wafer with good followability and a uniform film thickness. Further, there is provided a method for producing a light-emitting device, which uses the laminate to cover the upper surface and the side surface of the LED wafer with a phosphor sheet by a method having high productivity.

本發明如以下所述。 The invention is as follows.

[1]一種積層體,其是包含支持基材、以及含有螢光體及樹脂的螢光體片材的積層體,並且藉由拉伸試驗而求出的所述支持基材的23℃下的斷裂伸長率為200%以上,且所述支持基材的23℃下的楊氏模數為600MPa以下。 [1] A laminate comprising a support substrate and a phosphor sheet containing a phosphor and a resin, and the support substrate obtained by a tensile test at 23 ° C The elongation at break is 200% or more, and the Young's modulus at 23 ° C of the support substrate is 600 MPa or less.

[2]如[1]所述的積層體,其中所述支持基材的23℃下的楊氏模數為400MPa以下。 [2] The laminate according to [1], wherein the support substrate has a Young's modulus at 23 ° C of 400 MPa or less.

[3]如[1]所述的積層體,其中所述支持基材的23℃下的楊氏模數為100MPa以下。 [3] The laminate according to [1], wherein the support substrate has a Young's modulus at 23 ° C of 100 MPa or less.

[4]如[1]至[3]中任一項所述的積層體,其中所述支持基材為聚氯乙烯或者聚胺基甲酸酯。 [4] The laminate according to any one of [1] to [3] wherein the support substrate is polyvinyl chloride or polyurethane.

[5]一種發光裝置的製造方法,其包括如下步驟(被覆步驟):將接合於基板上的LED晶片的發光面以如[1]至[4]中任一項所述的積層體的螢光體片材進行被覆。 [5] A method of manufacturing a light-emitting device, comprising the step of coating a light-emitting surface of an LED wafer bonded to a substrate, such as the layered body of any one of [1] to [4] The light body sheet is coated.

[6]一種發光裝置的製造方法,其包括如下步驟(被覆步驟):將接合於基板上的LED晶片的上表面及側面以如[1]至[4]中任一 項所述的積層體的螢光體片材進行被覆。 [6] A method of manufacturing a light-emitting device, comprising the steps of: coating step: bonding an upper surface and a side surface of an LED wafer bonded to a substrate to any one of [1] to [4] The phosphor sheet of the laminate described in the section is coated.

[7]如[5]或[6]所述的發光裝置的製造方法,其中所述LED晶片與所述螢光體片材在LED晶片的上表面接觸的部分中的自LED晶片上表面至螢光體片材外表面為止的距離a[μm]、和所述LED晶片與所述螢光體片材在LED晶片的側面接觸的部分中的自LED晶片側面至螢光體片材外表面為止的距離b[μm]滿足如下關係:1.00<a/b<1.20。 [7] The method of manufacturing a light-emitting device according to [5] or [6] wherein the LED wafer is in a portion from the surface of the LED wafer in a portion where the phosphor sheet is in contact with the upper surface of the LED wafer a distance a [μm] from the outer surface of the phosphor sheet, and from the side of the LED wafer to the outer surface of the phosphor sheet in a portion where the LED wafer is in contact with the side surface of the phosphor sheet at the LED wafer The distance b [μm] until the following relationship is satisfied: 1.00 < a / b < 1.20.

[8]如[5]或[6]所述的發光裝置的製造方法,其中於以如[1]至[4]中任一項所述的積層體的螢光體片材進行被覆的步驟(所述被覆步驟)中,所述LED晶片與所述螢光體片材在LED晶片的上表面接觸的部分中的自LED晶片上表面至螢光體片材外表面為止的距離a[μm]、和所述LED晶片與所述螢光體片材在LED晶片的側面接觸的部分中的自LED晶片側面至螢光體片材外表面為止的距離b[μm]滿足如下關係:1.00<a/b<1.20。 [8] The method of producing a light-emitting device according to any one of [1] to [4], wherein the step of coating the phosphor sheet of the laminate according to any one of [1] to [4] (the coating step), a distance a from the upper surface of the LED wafer to the outer surface of the phosphor sheet in the portion of the LED wafer that is in contact with the upper surface of the LED wafer in the LED wafer [μm And a distance b [μm] from the side of the LED wafer to the outer surface of the phosphor sheet in the portion of the LED wafer that is in contact with the side surface of the LED wafer in the LED wafer satisfies the following relationship: 1.00 < a/b<1.20.

依據本發明,可追隨性良好地於LED晶片上部發光面 以及側部發光面貼附螢光體片材。另外,藉此可提供不存在發光色的方位不均的發光裝置。 According to the present invention, the follow-up property of the LED chip upper surface is good A phosphor sheet is attached to the side emitting surface. In addition, it is thereby possible to provide a light-emitting device in which the azimuth unevenness of the luminescent color does not exist.

1‧‧‧積層體 1‧‧ ‧ laminated body

2‧‧‧支持基材 2‧‧‧Support substrate

3‧‧‧螢光體片材 3‧‧‧Fuel sheet

4‧‧‧黏著材料(黏著劑層) 4‧‧‧Adhesive material (adhesive layer)

5‧‧‧真空腔室 5‧‧‧vacuum chamber

6‧‧‧上部壓板 6‧‧‧Upper platen

7‧‧‧下部壓板 7‧‧‧Lower pressure plate

8‧‧‧可撓性片材 8‧‧‧Flexible sheet

9‧‧‧密閉空間(壓緊機構用) 9‧‧‧Confined space (for compacting mechanism)

10‧‧‧空氣注入.排出口(壓緊機構用) 10‧‧‧Air injection. Discharge port (for compacting mechanism)

11‧‧‧壓緊機構 11‧‧‧Compacting mechanism

12‧‧‧空氣注入.排出口(真空腔室用) 12‧‧‧Air injection. Discharge port (for vacuum chamber)

13‧‧‧基板 13‧‧‧Substrate

14‧‧‧LED晶片 14‧‧‧LED chip

15‧‧‧發光裝置 15‧‧‧Lighting device

16‧‧‧LED晶片上表面及側面的被覆部 16‧‧‧covered part of the upper surface and side of the LED chip

17‧‧‧基材的被覆部 17‧‧‧ Coverage of the substrate

18‧‧‧凸塊 18‧‧‧Bumps

a、b‧‧‧距離 a, b‧‧‧ distance

圖1是本發明的積層體的示意圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view of a laminate of the present invention.

圖2是本發明的積層體,即具有黏著劑的積層體的示意圖。 Fig. 2 is a schematic view showing a laminate of the present invention, that is, a laminate having an adhesive.

圖3a~圖3f是使用本發明的積層體的發光裝置的製造方法的一例。 3a to 3f are examples of a method of manufacturing a light-emitting device using the laminate of the present invention.

圖4是以螢光體片材被覆的發光裝置的剖面示意圖以及俯視圖。 4 is a schematic cross-sectional view and a plan view of a light-emitting device covered with a phosphor sheet.

圖1中表示本發明的積層體。本發明的積層體1包含支持基材2、以及含有螢光體及樹脂的螢光體片材3,並且於23℃下,所述支持基材的拉伸試驗中的斷裂伸長率為200%以上,且楊氏模數為600MPa以下。 The laminate of the present invention is shown in Fig. 1. The laminate 1 of the present invention comprises a support substrate 2, and a phosphor sheet 3 containing a phosphor and a resin, and the elongation at break in the tensile test of the support substrate is 200% at 23 ° C. The above, and the Young's modulus is 600 MPa or less.

即,所謂本發明的積層體,是指包含支持基材、以及含有螢光體及樹脂的螢光體片材的積層體,並且藉由拉伸試驗而求出的所述支持基材的23℃下的斷裂伸長率為200%以上,且所述支持基材的23℃下的楊氏模數為600MPa以下。 In other words, the laminated body of the present invention refers to a laminated body including a supporting substrate and a phosphor sheet containing a phosphor and a resin, and the support substrate obtained by a tensile test 23 The elongation at break at ° C is 200% or more, and the Young's modulus at 23 ° C of the support substrate is 600 MPa or less.

<螢光體片材> <Silver sheet>

螢光體片材只要主要包含樹脂及螢光體,則並無特別限定,可使用多種片材。亦可視需要而包含其他成分。 The phosphor sheet is not particularly limited as long as it mainly contains a resin and a phosphor, and various sheets can be used. Other ingredients may also be included as needed.

(螢光體片材的物性) (physical properties of phosphor sheets)

就保管性、搬運性以及加工性的觀點而言,螢光體片材較佳為於室溫附近彈性高。另一方面,就以追隨LED晶片的方式進行變形且使其黏接的觀點而言,較佳為於一定的條件下彈性降低,表現出柔軟性以及黏接性(黏著性)。就該些觀點而言,本螢光體片材較佳為藉由60℃以上的加熱而柔軟化,表現出黏接性。 From the viewpoints of storage property, handling property, and processability, the phosphor sheet preferably has high elasticity in the vicinity of room temperature. On the other hand, from the viewpoint of deforming and adhering to the LED chip, it is preferable to lower the elasticity under a certain condition, and to exhibit flexibility and adhesion (adhesiveness). From these viewpoints, the phosphor sheet is preferably softened by heating at 60 ° C or higher, and exhibits adhesiveness.

此種螢光體片材的貯存彈性模數較佳為於25℃下為0.1 MPa以上且於100℃下為小於0.1MPa,更佳為於25℃下為0.5MPa以上且於100℃下小於0.05MPa。 The storage elastic modulus of such a phosphor sheet is preferably 0.1 at 25 ° C. It is MPa or more and less than 0.1 MPa at 100 ° C, more preferably 0.5 MPa or more at 25 ° C and less than 0.05 MPa at 100 ° C.

此處所謂的貯存彈性模數,是指進行動態黏彈性測定的 情況下的貯存彈性模數。所謂動態黏彈性,是指當以某種正弦頻率對材料施加剪切應變時,將達到穩定狀態的情況下所表現出的剪切應力分解為應變與相位一致的成分(彈性成分)、以及應變與相位慢90°的成分(黏性成分),對材料的動態力學特性進行分析的方法。此處,將相位與剪切應變一致的應力成分除以剪切應變而得者為貯存彈性模數G',是表示材料對於各溫度下的動態應變的變形、追隨者,因此與材料的加工性或黏接性密切相關。 The storage elastic modulus referred to herein refers to the measurement of dynamic viscoelasticity. Storage elastic modulus in the case. The term "dynamic viscoelasticity" refers to the decomposition of the shear stress expressed in the steady state when the shear strain is applied to the material at a certain sinusoidal frequency, and the composition (elastic component) and the strain which are consistent with the strain and the phase. A method of analyzing the dynamic mechanical properties of a material by a component (viscous component) that is 90° slower in phase. Here, the stress component that matches the phase and the shear strain is divided by the shear strain, and the storage elastic modulus G′ is the deformation and follower of the material for the dynamic strain at each temperature. Therefore, the material is processed. Sex or adhesion is closely related.

關於本發明的螢光體片材的情況,藉由在25℃下具有 0.1MPa以上的貯存彈性模數,相對於室溫(25℃)下的利用刃體的切斷加工等快速的剪切應力,亦於片材不存在周圍的變形的狀態下切斷,因此獲得高尺寸精度的加工性。為了本發明的目的,室溫下的貯存彈性模數的上限並無特別限制,若考慮到減少與 LED元件貼合後的應力應變的必要性,則所述貯存彈性模數的上限較理想為1GPa以下。另外,藉由在100℃下貯存彈性模數為小於0.1MPa,若進行60℃~150℃下的加熱貼附,則相對於LED晶片表面的形狀而迅速變形來追隨,獲得高的黏接力。若為於100℃下獲得小於0.1MPa的貯存彈性模數的螢光體片材,則隨著自室溫起提高溫度,貯存彈性模數下降,即便小於100℃,貼附性亦與溫度上升同時良好,但為了獲得實用的黏接性,較佳為60℃以上。 另外,此種螢光體片材藉由超過100℃來進行加熱,而進一步推進貯存彈性模數的下降,貼附性變得良好,但於超過150℃的溫度下應力緩和不充分的範圍內,樹脂的硬化急速進行,容易產生龜裂或剝離。因此,較佳的加熱貼附溫度為60℃~150℃,尤佳為60℃~120℃。為了本發明的目的,100℃下的貯存彈性模數的下限並無特別限制,但若於LED元件上加熱貼附時流動性過高,則於貼附前無法保持藉由切斷或開孔而加工的形狀,因此所述貯存彈性模數的下限較理想為0.001MPa以上。 Regarding the case of the phosphor sheet of the present invention, by having at 25 ° C The storage elastic modulus of 0.1 MPa or more is cut off in a state where the sheet is not deformed in the vicinity of the sheet due to the rapid shear stress such as the cutting process by the blade at room temperature (25 ° C). Machinability of dimensional accuracy. For the purpose of the present invention, the upper limit of the storage elastic modulus at room temperature is not particularly limited, in consideration of reduction and The necessity of the stress strain after the LED elements are bonded is preferably an upper limit of the storage elastic modulus of 1 GPa or less. In addition, when the storage modulus at 100 ° C is less than 0.1 MPa, when heating is applied at 60 ° C to 150 ° C, the shape of the surface of the LED wafer is rapidly deformed to follow, and high adhesion is obtained. If a phosphor sheet having a storage elastic modulus of less than 0.1 MPa is obtained at 100 ° C, the storage elastic modulus decreases as the temperature is raised from room temperature, and even if it is less than 100 ° C, the adhesion is simultaneously increased with temperature. Good, but in order to obtain practical adhesion, it is preferably 60 ° C or more. In addition, when the phosphor sheet is heated at a temperature exceeding 100 ° C, the storage modulus is further lowered, and the adhesion is improved. However, the stress relaxation is insufficient in a temperature exceeding 150 ° C. The hardening of the resin proceeds rapidly, and cracking or peeling easily occurs. Therefore, the preferred heating and attaching temperature is 60 ° C to 150 ° C, and more preferably 60 ° C to 120 ° C. For the purpose of the present invention, the lower limit of the storage elastic modulus at 100 ° C is not particularly limited, but if the fluidity is too high when the LED element is heated and attached, it cannot be maintained by cutting or opening before attachment. Since the shape is processed, the lower limit of the storage elastic modulus is preferably 0.001 MPa or more.

若作為螢光體片材而獲得所述的貯存彈性模數,則其中所含的樹脂可為未硬化或者半硬化狀態的樹脂,但若如下所述考慮到片材的操作性.保存性等,所含的樹脂較佳為硬化後的樹脂。若樹脂為未硬化、或者半硬化狀態,則有於螢光體片材的保存中在室溫下進行硬化反應,貯存彈性模數脫離適當範圍的顧慮。為了防止所述顧慮,樹脂較理想為硬化完畢或者於室溫保存中在1個月左右的長期間,硬化進行至貯存彈性模數不變化的程度。 When the storage elastic modulus is obtained as a phosphor sheet, the resin contained therein may be an unhardened or semi-hardened resin, but the operability of the sheet is considered as follows. The resin contained in the storage property or the like is preferably a resin after curing. When the resin is in an uncured or semi-hardened state, the curing reaction is carried out at room temperature during storage of the phosphor sheet, and the storage elastic modulus is out of the proper range. In order to prevent such a concern, it is preferred that the resin be hardened or stored in a room temperature for a period of about one month, and the hardening is carried out until the storage elastic modulus does not change.

(樹脂) (resin)

本發明的螢光體片材中所含的樹脂是於內部均質地分散有螢光體的樹脂,只要可形成片材,則可為任意的樹脂。 The resin contained in the phosphor sheet of the present invention is a resin in which a phosphor is uniformly dispersed inside, and any resin can be used as long as it can form a sheet.

具體而言,可列舉:矽酮樹脂、環氧樹脂、聚芳酯樹脂、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)改質聚芳酯樹脂、聚碳酸酯樹脂、環狀烯烴、聚對苯二甲酸乙二酯樹脂、聚甲基丙烯酸甲酯樹脂、聚丙烯樹脂、改質丙烯酸、聚苯乙烯樹脂以及丙烯腈.苯乙烯共聚物樹脂等。此處,所謂PET,是指聚對苯二甲酸乙二酯。本發明中,就透明性的方面而言,較佳為使用矽酮樹脂或環氧樹脂。進而就耐熱性的方面而言,特佳為使用矽酮樹脂。 Specific examples thereof include an anthrone resin, an epoxy resin, a polyarylate resin, a polyethylene terephthalate (PET) modified polyarylate resin, a polycarbonate resin, a cyclic olefin, and the like. Polyethylene terephthalate resin, polymethyl methacrylate resin, polypropylene resin, modified acrylic acid, polystyrene resin and acrylonitrile. Styrene copolymer resin and the like. Here, PET means polyethylene terephthalate. In the present invention, in terms of transparency, an anthrone resin or an epoxy resin is preferably used. Further, in terms of heat resistance, it is particularly preferable to use an fluorenone resin.

本發明中使用的矽酮樹脂較佳為硬化型矽酮橡膠。可使用一液型、二液型(三液型)的任一種液構成。硬化型矽酮橡膠中,作為藉由空氣中的水分或觸媒而產生縮合反應的類型,有脫醇型、脫肟型、脫乙酸型、脫羥基胺型等。另外,作為藉由觸媒而產生矽氫化反應的類型,有加成反應型。可使用該些任一種類型的硬化型矽酮橡膠。尤其就不存在伴隨硬化反應的副產物且硬化收縮小的方面、容易藉由加熱而加快硬化的方面而言,更佳為加成反應型的矽酮橡膠。 The fluorenone resin used in the present invention is preferably a hardened fluorenone rubber. It can be composed of one liquid type or two liquid type (three liquid type). In the curable fluorenone rubber, a type which causes a condensation reaction by moisture or a catalyst in the air includes a dealcoholization type, a dehydration type, a deacetation type, and a dehydroxyamine type. Further, as a type which generates a hydrazine hydrogenation reaction by a catalyst, there is an addition reaction type. Any of these types of hardened fluorenone rubbers can be used. In particular, an oxime rubber having an addition reaction type is more preferable because it does not have a by-product accompanying the hardening reaction and has a small hardening shrinkage and is easily accelerated by heating.

作為一例,加成反應型的矽酮橡膠是藉由含有鍵結於矽原子上的烯基的化合物、與具有鍵結於矽原子上的氫原子的化合物的矽氫化反應而形成。此種材料可列舉如下材料,該材料是藉 由乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、烯丙基三甲氧基矽烷、丙烯基三甲氧基矽烷、降冰片烯基三甲氧基矽烷、辛烯基三甲氧基矽烷等含有鍵結於矽原子上的烯基的化合物,與甲基氫化聚矽氧烷、二甲基聚矽氧烷-CO-甲基氫化聚矽氧烷、乙基氫化聚矽氧烷、甲基氫化聚矽氧烷-CO-甲基苯基聚矽氧烷等具有鍵結於矽原子上的氫原子的化合物的矽氫化反應而形成。另外,除此以外,例如可利用如日本專利特開2010-159411號公報中記載的公知材料。 As an example, the addition reaction type fluorenone rubber is formed by a hydrogenation reaction of a compound containing an alkenyl group bonded to a ruthenium atom with a compound having a hydrogen atom bonded to a ruthenium atom. Such materials can be exemplified by the following materials, which are borrowed Containing a bond by vinyl trimethoxy decane, vinyl triethoxy decane, allyl trimethoxy decane, propylene trimethoxy decane, norbornene trimethoxy decane, octenyl trimethoxy decane, etc. a compound of an alkenyl group attached to a ruthenium atom, with a methyl hydrogenated polyoxane, a dimethyl polyoxane-CO-methyl hydrogenated polyoxyalkylene, an ethyl hydrogenated polyoxyalkylene, a methyl hydrogenated polymer A hydrazine hydrogenation reaction of a compound having a hydrogen atom bonded to a ruthenium atom such as a siloxane or a CO-methylphenyl polysiloxane. In addition, a known material as described in Japanese Laid-Open Patent Publication No. 2010-159411 can be used.

藉由適當設計該些樹脂,來控制室溫(25℃)下的貯存 彈性模數及高溫(100℃)下的貯存彈性模數,獲得對本發明的實施有用的樹脂。 Control storage at room temperature (25 ° C) by properly designing the resins The elastic modulus and the storage elastic modulus at a high temperature (100 ° C) give a resin useful for the practice of the present invention.

另外,市售的樹脂亦可自一般的LED用途的矽酮密封 材料中選擇具有適當的貯存彈性模數的樹脂來使用。具體例有:東麗.道康寧(Toray Dow Corning)公司製造的OE-6630A/B、OE-6520A/B等。 In addition, commercially available resins can also be sealed from fluorenone for general LED applications. A resin having an appropriate storage elastic modulus is selected for use in the material. Specific examples are: Toray. OE-6630A/B, OE-6520A/B, manufactured by Toray Dow Corning.

(螢光體) (fluorescent body)

螢光體吸收由LED晶片發出的藍色光、紫色光、紫外光而轉換波長,發出與LED晶片的光不同波長的紅色、橙色、黃色、綠色、藍色區域的波長的光。藉此,由LED晶片發出的光的一部分、與由螢光體發出的光的一部分混合,獲得包含白色的多色系LED。具體而言,藉由在藍色系LED中,光學性地組合利用源自LED的光而發出黃色系發光色的光的螢光體,可使用單一的LED 晶片來發出白色系的光。 The phosphor absorbs the blue light, the violet light, and the ultraviolet light emitted from the LED chip to convert the wavelength, and emits light of a wavelength of red, orange, yellow, green, and blue regions different in wavelength from the light of the LED chip. Thereby, a part of the light emitted from the LED wafer is mixed with a part of the light emitted from the phosphor to obtain a multicolor LED including white. Specifically, a single LED can be used by optically combining a phosphor that emits light of a yellow luminescent color by light from the LED in the blue LED. The wafer emits white light.

如上所述的螢光體中有:發出綠色光的螢光體、發出藍色光的螢光體、發出黃色光的螢光體、發出紅色光的螢光體等多種螢光體。本發明中使用的具體螢光體可列舉:有機螢光體、無機螢光體、螢光顏料、螢光染料等公知的螢光體。有機螢光體可列舉:烯丙基磺醯胺.三聚氰胺甲醛共縮合染色物或苝(perylene)系螢光體等,就可長期使用的方面而言,較佳為使用苝系螢光體。本發明中特佳使用的螢光體可列舉無機螢光體。以下對本發明中使用的無機螢光體進行記載。 The phosphor described above includes a plurality of phosphors such as a phosphor that emits green light, a phosphor that emits blue light, a phosphor that emits yellow light, and a phosphor that emits red light. Specific examples of the phosphor used in the present invention include known phosphors such as an organic phosphor, an inorganic phosphor, a fluorescent pigment, and a fluorescent dye. The organic phosphor can be exemplified by allylsulfonamide. A melamine-formaldehyde co-condensation dye or a perylene-based phosphor or the like is preferably used in the long-term use, and a lanthanide-based phosphor is preferably used. The phosphor which is particularly preferably used in the present invention is an inorganic phosphor. The inorganic phosphor used in the present invention will be described below.

發出綠色光的螢光體例如有:SrAl2O4:Eu、Y2SiO5:Ce,Tb、MgAl11O19:Ce,Tb、Sr7Al12O25:Eu、(Mg、Ca、Sr、Ba中的至少1種以上)Ga2S4:Eu等。 The phosphor that emits green light is, for example, SrAl 2 O 4 :Eu, Y 2 SiO 5 :Ce, Tb, MgAl 11 O 19 :Ce, Tb, Sr 7 Al 12 O 25 :Eu, (Mg, Ca, Sr At least one or more of Ba) Ga 2 S 4 :Eu or the like.

發出藍色光的螢光體例如有:Sr5(PO4)3Cl:Eu、(SrCaBa)5(PO4)3Cl:Eu、(BaCa)5(PO4)3Cl:Eu、(Mg、Ca、Sr、Ba中的至少1種以上)2B5O9Cl:Eu,Mn、(Mg、Ca、Sr、Ba中的至少1種以上)(PO4)6Cl2:Eu,Mn等。 Examples of the phosphor that emits blue light include: Sr 5 (PO 4 ) 3 Cl:Eu, (SrCaBa) 5 (PO 4 ) 3 Cl:Eu, (BaCa) 5 (PO 4 ) 3 Cl:Eu, (Mg, At least one of Ca, Sr, and Ba) 2 B 5 O 9 Cl: Eu, Mn, (at least one of Mg, Ca, Sr, and Ba) (PO 4 ) 6 Cl 2 : Eu, Mn, etc. .

發出綠色至黃色光的螢光體有:至少經鈰所活化的釔.鋁氧化物螢光體、至少經鈰所活化的釔.釓.鋁氧化物螢光體、至少經鈰所活化的釔.鋁.石榴石氧化物螢光體、以及至少經鈰所活化的釔.鎵.鋁氧化物螢光體等(所謂釔鋁石榴石(yttrium aluminum garnet,YAG)系螢光體)。具體而言可使用:Ln3M5O12:R(Ln是選自Y、Gd、La中的至少1種以上;M包含Al、Ca的至少任一 者;R為鑭系)、(Y1-xGax)3(Al1-yGay)5O12:R(R為選自Ce、Tb、Pr、Sm、Eu、Dy、Ho中的至少1種以上;0<x<0.5,0<y<0.5)。 The phosphor that emits green to yellow light is: at least the sputum activated by sputum. Aluminium oxide phosphor, at least activated by strontium. Hey. Aluminium oxide phosphor, at least activated by strontium. aluminum. a garnet oxide phosphor, and a ruthenium activated at least by ruthenium. gallium. Aluminum oxide phosphor or the like (so-called yttrium aluminum garnet (YAG)-based phosphor). Specifically, Ln 3 M 5 O 12 : R (Ln is at least one selected from the group consisting of Y, Gd, and La; M includes at least one of Al and Ca; R is a lanthanide); 1-x Ga x ) 3 (Al 1-y Ga y ) 5 O 12 : R (R is at least one selected from the group consisting of Ce, Tb, Pr, Sm, Eu, Dy, and Ho; 0<x<0.5 , 0 < y < 0.5).

發出紅色光的螢光體例如有:Y2O2S:Eu、La2O2S:Eu、Y2O3:Eu、Gd2O2S:Eu等。 Examples of the phosphor that emits red light include Y 2 O 2 S:Eu, La 2 O 2 S:Eu, Y 2 O 3 :Eu, Gd 2 O 2 S:Eu, and the like.

另外,與當前主流的藍色LED對應而發光的螢光體可列舉:Y3(Al,Ga)5O12:Ce、(Y,Gd)3Al5O12:Ce、Lu3Al5O12:Ce、Y3Al5O12:Ce等YAG系螢光體,Tb3Al5O12:Ce等鋱鋁石榴石(terbium aluminum garnet,TAG)系螢光體,(Ba,Sr)2SiO4:Eu系螢光體或Ca3Sc2Si3O12:Ce系螢光體,(Sr,Ba,Mg)2SiO4:Eu等矽酸鹽系螢光體,(Ca,Sr)2Si5N8:Eu、(Ca,Sr)AlSiN3:Eu、CaSiAlN3:Eu等氮化物系螢光體,Cax(Si,Al)12(O,N)16:Eu等氮氧化物系螢光體,以及(Ba,Sr,Ca)Si2O2N2:Eu系螢光體,Ca8MgSi4O16Cl2:Eu系螢光體、SrAl2O4:Eu、Sr4Al14O25:Eu等螢光體。 Further, examples of the phosphor that emits light corresponding to the current mainstream blue LED include Y 3 (Al, Ga) 5 O 12 :Ce, (Y, Gd) 3 Al 5 O 12 :Ce, Lu 3 Al 5 O 12 : YAG-based phosphor such as Ce, Y 3 Al 5 O 12 :Ce, terbium aluminum garnet (TAG)-based phosphor, Tb 3 Al 5 O 12 :Ce, (Ba,Sr) 2 SiO 4 :Eu-based phosphor or Ca 3 Sc 2 Si 3 O 12 :Ce-based phosphor, (Sr, Ba, Mg) 2 SiO 4 : Eu-based citrate-based phosphor, (Ca, Sr) 2 Si 5 N 8 :Eu, (Ca,Sr)AlSiN 3 :Eu, a nitride-based phosphor such as CaSiAlN 3 :Eu, a nitrogen oxide such as Ca x (Si,Al) 12 (O,N) 16 :Eu Fluorescent body, and (Ba, Sr, Ca)Si 2 O 2 N 2 :Eu-based phosphor, Ca 8 MgSi 4 O 16 Cl 2 :Eu-based phosphor, SrAl 2 O 4 :Eu, Sr 4 Al 14 O 25 : a phosphor such as Eu.

該些螢光體中,就發光效率或亮度等方面而言,較佳為使用YAG系螢光體、TAG系螢光體、矽酸鹽系螢光體。 Among these phosphors, a YAG-based phosphor, a TAG-based phosphor, and a citrate-based phosphor are preferably used in terms of luminous efficiency, brightness, and the like.

除了所述以外,可根據用途或作為目標的發光色來使用公知的螢光體。 In addition to the above, a known phosphor can be used depending on the use or the target luminescent color.

螢光體的粒子尺寸並無特別限制,較佳為D50為0.05μm以上者,更佳為3μm以上者。另外,較佳為D50為30μm以下者。此處所謂D50,是指在利用雷射繞射散射式粒度分佈測定法進行測定而獲得的體積基準粒度分佈中,自小粒徑側起的累計通過率達到50%時的粒徑。若D50為所述範圍,則螢光體片材中 的螢光體的分散性良好,可獲得穩定的發光。 The particle size of the phosphor is not particularly limited, and it is preferably such that D50 is 0.05 μm or more, and more preferably 3 μm or more. Further, it is preferable that the D50 is 30 μm or less. Here, D50 is a particle diameter when the cumulative passage rate from the small particle diameter side reaches 50% in the volume-based particle size distribution obtained by the measurement by the laser diffraction scattering particle size distribution measurement method. If D50 is in the range, then in the phosphor sheet The phosphor has good dispersibility and stable luminescence can be obtained.

本發明中,對螢光體的含量並無特別限制,但就提高源 自LED晶片的發光的波長轉換效率的觀點而言,所述螢光體的含量較佳為螢光體片材整體的30重量%以上,更佳為40重量%以上。螢光體含量的上限並無特別規定,但就容易製成作業性優異的螢光體片材的觀點而言,較佳為螢光體片材整體的95重量%以下,更佳為90重量%以下,尤佳為85重量%以下,特佳為80重量%以下。 In the present invention, the content of the phosphor is not particularly limited, but the source is increased. The content of the phosphor is preferably 30% by weight or more, and more preferably 40% by weight or more based on the entire phosphor sheet, from the viewpoint of wavelength conversion efficiency of light emission of the LED wafer. The upper limit of the content of the phosphor is not particularly limited. However, from the viewpoint of easily forming a phosphor sheet having excellent workability, it is preferably 95% by weight or less, and more preferably 90% by weight of the entire phosphor sheet. % or less is particularly preferably 85% by weight or less, particularly preferably 80% by weight or less.

本發明的螢光體片材特佳為用於LED晶片的表面被覆 用途。此時,藉由螢光體片材中的螢光體的含量為所述範圍,可獲得顯示出優異性能的LED發光裝置。 The phosphor sheet of the present invention is particularly preferably used for surface coating of an LED wafer. use. At this time, by the content of the phosphor in the phosphor sheet being in the above range, an LED light-emitting device exhibiting excellent performance can be obtained.

(矽酮微粒子) (fluorenone microparticles)

為了提高螢光體片材製作用樹脂組成物的流動性而使塗佈性良好,本發明中的螢光體片材亦可含有矽酮微粒子。所含有的矽酮微粒子較佳為包含矽酮樹脂及/或矽酮橡膠的微粒子。特佳為利用將有機三烷氧基矽烷或有機二烷氧基矽烷、有機三乙醯氧基矽烷、有機二乙醯氧基矽烷、有機三肟矽烷、有機二肟矽烷等有機矽烷進行水解,繼而使其縮合的方法來獲得的矽酮微粒子。 The phosphor sheet in the present invention may contain fluorenone fine particles in order to improve the fluidity of the resin composition for producing a phosphor sheet and to improve the coatability. The fluorenone fine particles contained are preferably fine particles containing an fluorenone resin and/or an anthrone rubber. Particularly preferably, it is hydrolyzed by using an organic decane such as an organic trialkoxy decane or an organic dialkoxy decane, an organic triethoxy decane, an organic diethyl methoxy decane, an organic trioxane or an organic dioxane. The fluorenone microparticles are obtained by a method of condensing them.

有機三烷氧基矽烷可例示:甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三-正丙氧基矽烷、甲基三-異丙氧基矽烷、甲基三-正丁氧基矽烷、甲基三-異丁氧基矽烷、甲基三-第二丁氧基矽烷、甲基三-第三丁氧基矽烷、乙基三甲氧基矽烷、正丙基三甲氧 基矽烷、異丙基三甲氧基矽烷、正丁基三丁氧基矽烷、異丁基三丁氧基矽烷、第二丁基三甲氧基矽烷、第三丁基三丁氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、乙烯基三甲氧基矽烷、苯基三甲氧基矽烷等。 The organotrialkoxydecane can be exemplified by methyltrimethoxydecane, methyltriethoxydecane, methyltri-n-propoxydecane, methyltris-isopropoxydecane, and methyltri-n-butylene. Oxy decane, methyl tri-isobutoxy decane, methyl tri-second butoxy decane, methyl tri-tert-butoxy decane, ethyl trimethoxy decane, n-propyl trimethoxy Base decane, isopropyl trimethoxy decane, n-butyl tributoxy decane, isobutyl tributoxy decane, second butyl trimethoxy decane, tert-butyl tributoxy decane, N- β (aminoethyl) γ-aminopropyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, vinyltrimethoxydecane, phenyltrimethoxydecane, and the like.

有機二烷氧基矽烷可例示:二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基乙基二甲氧基矽烷、甲基乙基二乙氧基矽烷、二乙基二乙氧基矽烷、二乙基二甲氧基矽烷、3-胺基丙基甲基二乙氧基矽烷、N-(2-胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-(2-胺基乙基)-3-胺基異丁基甲基二甲氧基矽烷、N-乙基胺基異丁基甲基二乙氧基矽烷、(苯基胺基甲基)甲基二甲氧基矽烷、乙烯基甲基二乙氧基矽烷等。 The organic dialkoxy decane can be exemplified by dimethyl dimethoxy decane, dimethyl diethoxy decane, methyl ethyl dimethoxy decane, methyl ethyl diethoxy decane, and diethyl. Diethoxydecane, diethyldimethoxydecane, 3-aminopropylmethyldiethoxydecane, N-(2-aminoethyl)-3-aminopropylmethyldimethyl Oxydecane, N-(2-aminoethyl)-3-aminoisobutylmethyldimethoxydecane, N-ethylaminoisobutylmethyldiethoxydecane, (phenylaminomethyl) And methyl dimethoxy decane, vinyl methyl diethoxy decane, and the like.

有機三乙醯氧基矽烷可例示:甲基三乙醯氧基矽烷、乙基三乙醯氧基矽烷、乙烯基三乙醯氧基矽烷等。 The organic triethoxydecane can be exemplified by methyltriethoxydecane, ethyltriethoxydecane, vinyltriethoxydecane or the like.

有機二乙醯氧基矽烷可例示:二甲基二乙醯氧基矽烷、甲基乙基二乙醯氧基矽烷、乙烯基甲基二乙醯氧基矽烷、乙烯基乙基二乙醯氧基矽烷等。 The organic diethoxy decane can be exemplified by dimethyldiethoxydecane, methylethyldiethoxydecane, vinylmethyldiethoxydecane, vinylethyldiethoxycarbonyl. Base decane and the like.

有機三肟矽烷可例示:甲基三甲基乙基酮肟矽烷、乙烯基三甲基乙基酮肟矽烷,有機二肟矽烷可例示:甲基乙基雙甲基乙基酮肟矽烷等。 The organic trioxane is exemplified by methyl trimethyl ethyl ketone decane and vinyl trimethyl ethyl ketone decane, and the organic dioxane is exemplified by methyl ethyl bismethyl ethyl ketone decane.

具體而言,此種粒子可利用以下方法來獲得:日本專利特開昭63-77940號公報中所報告的方法、日本專利特開平6-248081號公報中所報告的方法、日本專利特開2003-342370號 公報中所報告的方法、日本專利特開平4-88022號公報中所報告的方法等。另外,還已知方法:將有機三烷氧基矽烷或有機二烷氧基矽烷、有機三乙醯氧基矽烷、有機二乙醯氧基矽烷、有機三肟矽烷、有機二肟矽烷等有機矽烷及/或其部分水解物添加於鹼水溶液中,使其水解.縮合而獲得粒子的方法;或於水或者酸性溶液中添加有機矽烷及/或其部分水解物,獲得該有機矽烷及/或其部分水解物的水解部分縮合物後,添加鹼來進行縮合反應,獲得粒子的方法;將有機矽烷及/或其水解物作為上層,將鹼或者鹼與有機溶劑的混合液作為下層,於該些層的界面使該有機矽烷及/或其水解物進行水解.縮聚而獲得粒子的方法等;該些任一種方法中均可獲得本發明中使用的粒子。 Specifically, such a particle can be obtained by the method described in Japanese Laid-Open Patent Publication No. SHO63-77940, the method of Japanese Patent Application Laid-Open No. Hei. -342370 The method reported in the publication, the method reported in Japanese Laid-Open Patent Publication No. Hei-4-88022, and the like. Further, a method is also known: an organic decane such as an organic trialkoxy decane or an organic dialkoxy decane, an organic triethoxy decane, an organic diethyl methoxy decane, an organic trioxane or an organic dioxane. And / or a part of its hydrolyzate is added to the aqueous alkali solution to hydrolyze it. a method of obtaining particles by condensation; or adding an organic decane and/or a partial hydrolyzate thereof to water or an acidic solution to obtain a hydrolyzed partial condensate of the organodecane and/or a partial hydrolyzate thereof, and then adding a base to carry out a condensation reaction, A method for obtaining particles; using an organic decane and/or a hydrolyzate thereof as an upper layer, a mixture of a base or a base and an organic solvent as a lower layer, and hydrolyzing the organodecane and/or its hydrolyzate at the interface of the layers. A method of obtaining a particle by polycondensation, etc.; the particles used in the present invention can be obtained in any of the methods.

該些方法中,較佳為利用於使有機矽烷及/或其部分水解 物進行水解.縮合來製造球狀矽酮微粒子時,於反應溶液內添加水溶性高分子或界面活性劑等高分子分散劑的方法,來獲得矽酮微粒子。水溶性高分子只要是於溶劑中發揮作為保護膠體的作用的高分子,則可使用合成高分子、天然高分子的任一種。具體而言可列舉聚乙烯基醇、聚乙烯基吡咯啶酮等水溶性高分子。界面活性劑只要是藉由在分子中具有親水性部位及疏水性部位而發揮作為保護膠體的作用者即可。具體而言,可列舉:十二烷基苯磺酸鈉、十二烷基苯磺酸銨、月桂基硫酸鈉、月桂基硫酸銨、聚氧乙烯烷基醚硫酸鈉等陰離子性界面活性劑,月桂基三甲基氯化銨、硬脂基三甲基氯化銨等陽離子活性劑,聚氧乙烯烷基醚、聚氧乙 烯二苯乙烯化苯基醚、聚氧伸烷基烯基醚、脫水山梨糖醇單烷基化物等醚系或者酯系的非離子性界面活性劑;聚醚改質聚二甲基矽氧烷、聚酯改質聚二甲基矽氧烷、芳烷基改質聚烷基矽氧烷等矽酮系界面活性劑,以及含全氟烷基的寡聚物等氟系界面活性劑,丙烯酸系界面活性劑。分散劑的添加方法可例示:預先添加於反應初液中的方法;與有機三烷氧基矽烷及/或其部分水解物同時添加的方法;使有機三烷氧基矽烷及/或其部分水解物進行水解部分縮合後添加的方法;可選擇該些方法中的任一種方法。相對於反應液量1重量份,分散劑的添加量較佳為5×10-7重量份~0.1重量份的範圍。若超過下限,則粒子彼此容易凝聚而成為塊狀物。 另外,若超過上限,則粒子中的分散劑殘留物增多,成為著色的原因。 Among these methods, it is preferred to utilize the hydrolysis of the organodecane and/or its partial hydrolyzate. When spheroidal fluorenone microparticles are produced by condensation, a method of adding a polymer dispersant such as a water-soluble polymer or a surfactant to the reaction solution is carried out to obtain fluorenone microparticles. Any of a synthetic polymer and a natural polymer can be used as long as it is a polymer which functions as a protective colloid in a solvent. Specific examples thereof include water-soluble polymers such as polyvinyl alcohol and polyvinylpyrrolidone. The surfactant may be used as a protective colloid by having a hydrophilic portion and a hydrophobic portion in the molecule. Specific examples thereof include anionic surfactants such as sodium dodecylbenzenesulfonate, ammonium laurylbenzenesulfonate, sodium lauryl sulfate, ammonium lauryl sulfate, and sodium polyoxyethylene alkyl ether sulfate. a cationic active agent such as lauryl trimethyl ammonium chloride or stearyl trimethyl ammonium chloride, polyoxyethylene alkyl ether, polyoxyethylene distyryl phenyl ether, polyoxyalkylene alkyl alkenyl ether, An ether-based or ester-based nonionic surfactant such as a sorbitan monoalkylate; a polyether modified polydimethyl siloxane, a polyester modified polydimethyl siloxane, an aralkyl group An anthrone-based surfactant such as a polyalkyl siloxane or a fluorine-based surfactant such as a perfluoroalkyl group-containing oligomer or an acrylic surfactant. The method of adding the dispersing agent can be exemplified by a method of previously adding to the initial liquid of the reaction; a method of simultaneously adding with the organic trialkoxy decane and/or a partial hydrolyzate thereof; and hydrolyzing the organotrialkoxy decane and/or a portion thereof A method of adding a portion after condensation of a hydrolysis; any one of the methods may be selected. The amount of the dispersant added is preferably in the range of 5 × 10 -7 parts by weight to 0.1 parts by weight based on 1 part by weight of the reaction liquid. When the lower limit is exceeded, the particles easily aggregate with each other to form agglomerates. On the other hand, when the upper limit is exceeded, the amount of the dispersant in the particles increases, which causes coloring.

出於控制於基質成分中的分散性或潤濕性等的目的,該 些矽酮粒子亦可利用表面改質劑來修飾粒子表面。表面改質劑可為藉由物理性吸附來進行修飾者,亦可為藉由化學反應來進行修飾者,具體而言可列舉矽烷偶合劑、硫醇偶合劑、鈦酸鹽偶合劑、鋁酸鹽偶合劑、氟系塗佈劑等,就耐熱性強、且無硬化阻礙的方面而言,特佳為利用矽烷偶合劑進行修飾。 For the purpose of controlling the dispersibility or wettability in the matrix component, etc. Some anthrone particles can also be modified with a surface modifier to modify the surface of the particles. The surface modifying agent may be modified by physical adsorption, or may be modified by a chemical reaction, and specifically, a decane coupling agent, a thiol coupling agent, a titanate coupling agent, and an aluminate may be mentioned. The salt coupling agent, the fluorine-based coating agent, and the like are particularly preferably modified with a decane coupling agent in terms of high heat resistance and no hardening inhibition.

矽酮微粒子中所含的有機取代基較佳為甲基、苯基,可 藉由該些取代基的含量來調整矽酮微粒子的折射率。於為了使LED發光裝置的亮度不降低,而欲以不會使通過作為黏合劑樹脂的矽酮樹脂的光散射的狀態來使用的情況下,較佳為矽酮微粒子 的折射率d1、與由該矽酮微粒子及螢光體以外的成分所引起的折射率d2的折射率差小。矽酮微粒子的折射率d1、與由矽酮微粒子及螢光體以外的成分所引起的折射率d2的折射率的差較佳為小於0.10,尤佳為0.03以下。藉由在此種範圍內控制折射率,則矽酮微粒子與矽酮組成物的界面的反射.散射減少,獲得高的透明性、透光率,不會使LED發光裝置的亮度降低。 The organic substituent contained in the fluorenone microparticles is preferably a methyl group or a phenyl group. The refractive index of the fluorenone microparticles is adjusted by the content of the substituents. In the case where the brightness of the LED light-emitting device is not lowered, and it is intended to be used in a state in which light passing through the fluorenone resin as the binder resin is not scattered, the fluorenone fine particles are preferably used. The refractive index d1 is smaller than the refractive index difference of the refractive index d2 caused by the components other than the fluorenone fine particles and the phosphor. The difference between the refractive index d1 of the fluorene ketone fine particles and the refractive index of the refractive index d2 caused by the components other than the fluorenone fine particles and the phosphor is preferably less than 0.10, particularly preferably 0.03 or less. By controlling the refractive index within this range, the reflection of the interface between the fluorenone microparticles and the fluorenone composition. The scattering is reduced, high transparency and light transmittance are obtained, and the brightness of the LED light-emitting device is not lowered.

折射率的測定時,作為全反射法,可使用阿貝(Abbe) 折射計、浦夫立希(Pulfrich)折射計、液浸型折射計、液浸法、最小偏向角法等,矽酮組成物的折射率測定中可使用阿貝折射計,矽酮微粒子的折射率測定中可使用液浸法。 When measuring the refractive index, as a total reflection method, Abbe can be used. A refractometer, a Pulfrich refractometer, a liquid immersion refractometer, a liquid immersion method, a minimum deflection angle method, etc., an Abbe refractometer can be used for the refractive index measurement of an anthrone composition, and the fluorenone microparticles are refracted. The liquid immersion method can be used for the rate measurement.

另外,作為用以控制所述折射率差的方法,可藉由改變 構成矽酮微粒子的原料的量比來調整。即,例如可藉由調整作為原料的甲基三烷氧基矽烷與苯基三烷氧基矽烷的混合比,增多甲基的構成比,來進行接近於1.4的低折射率化,相反,可藉由增多苯基的構成比,來進行比較高的折射率化。 In addition, as a method for controlling the refractive index difference, by changing The amount ratio of the raw materials constituting the fluorene ketone fine particles is adjusted. In other words, for example, by adjusting the mixing ratio of methyltrialkoxy decane and phenyltrialkoxy decane as a raw material, the composition ratio of the methyl group can be increased to achieve a low refractive index close to 1.4, and conversely, A relatively high refractive index is obtained by increasing the composition ratio of the phenyl group.

本發明中,矽酮微粒子的平均粒徑是由中值粒徑(D50) 所表示,該平均粒徑的下限較佳為0.01μm以上,尤佳為0.05μm以上。另外,上限較佳為2.0μm以下,尤佳為1.0μm以下。若平均粒徑為0.01μm以上,則容易製造粒徑被控制的粒子,另外,藉由平均粒徑為2.0μm以下,則螢光體片材的光學特性變得良好。 另外,藉由平均粒徑為0.01μm以上、2.0μm以下,而獲得充分的螢光體片材製造用樹脂液的流動性提高效果。另外,較佳為使 用單分散且圓球狀的粒子。本發明中,螢光體片材中所含的矽酮微粒子的平均粒徑即中值粒徑(D50)以及粒度分佈可藉由片材剖面的掃描型電子顯微鏡(Scanning Electron Microscope,SEM)觀察來測定。對由SEM而得的測定畫像進行畫像處理而求出粒徑分佈,於由此獲得的粒度分佈中,求出自小粒徑側起的累計通過率為50%的粒徑作為中值粒徑D50。於該情況下亦與螢光體粒子的情況同樣地,與真的平均粒徑相比較,根據螢光體片材的剖面SEM畫像而求出的矽酮微粒子的平均粒徑在理論上成為78.5%、實際上大致為70%~85%的值,但本發明中的矽酮微粒子的平均粒徑被定義為利用所述測定方法來求出的值。 In the present invention, the average particle diameter of the fluorenone microparticles is determined by the median diameter (D50). The lower limit of the average particle diameter is preferably 0.01 μm or more, and particularly preferably 0.05 μm or more. Further, the upper limit is preferably 2.0 μm or less, and particularly preferably 1.0 μm or less. When the average particle diameter is 0.01 μm or more, it is easy to produce particles whose particle diameter is controlled, and when the average particle diameter is 2.0 μm or less, the optical characteristics of the phosphor sheet become good. In addition, by having an average particle diameter of 0.01 μm or more and 2.0 μm or less, a sufficient fluidity improving effect of the resin liquid for producing a phosphor sheet can be obtained. In addition, it is preferred to Use monodisperse and spherical particles. In the present invention, the average particle diameter of the fluorenone microparticles contained in the phosphor sheet, that is, the median diameter (D50) and the particle size distribution can be observed by a Scanning Electron Microscope (SEM) of the sheet cross section. To determine. The measurement image obtained by SEM was subjected to image processing to obtain a particle size distribution, and in the particle size distribution thus obtained, a particle diameter of 50% from the small particle diameter side as a median diameter was determined. D50. In this case, as in the case of the phosphor particles, the average particle diameter of the fluorenone microparticles obtained from the cross-sectional SEM image of the phosphor sheet is theoretically 78.5 as compared with the true average particle diameter. % is actually approximately 70% to 85%, but the average particle diameter of the fluorenone microparticles in the present invention is defined as a value obtained by the above measurement method.

相對於矽酮樹脂100重量份,矽酮微粒子的含量的下限 較佳為1重量份以上,尤佳為2重量份以上。另外,上限較佳為20重量份以下,尤佳為10重量份以下。藉由含有1重量份以上的矽酮微粒子,而獲得特別良好的螢光體分散穩定化效果,另一方面,藉由含有20重量份以下,不會使矽酮組成物的黏度過度上升。 The lower limit of the content of the fluorenone microparticles relative to 100 parts by weight of the fluorenone resin It is preferably 1 part by weight or more, and particularly preferably 2 parts by weight or more. Further, the upper limit is preferably 20 parts by weight or less, and particularly preferably 10 parts by weight or less. When the fluorenone fine particles are contained in an amount of 1 part by weight or more, a particularly good phosphor dispersion stabilizing effect is obtained. On the other hand, when the content is 20 parts by weight or less, the viscosity of the fluorenone composition is not excessively increased.

(其他成分) (other ingredients)

為了賦予黏度製備、光擴散、塗佈性提高等效果,本發明的螢光體片材亦可更包含無機微粒子填充劑。該些無機填充劑可列舉:二氧化矽、氧化鋁、二氧化鈦、氧化鋯、鈦酸鋇、氧化鋅等。 In order to impart effects such as viscosity preparation, light diffusion, and coating property, the phosphor sheet of the present invention may further contain an inorganic fine particle filler. Examples of the inorganic filler include cerium oxide, aluminum oxide, titanium oxide, zirconium oxide, barium titanate, and zinc oxide.

另外,於本發明中,製作螢光體片材時所使用的矽酮樹脂組成物中,為了抑制常溫下的硬化而延長適用期,較佳為調配乙炔醇等矽氫化反應延遲劑來作為其他成分。另外,作為其他的 添加劑,亦可添加用以進行塗佈膜穩定化的調平劑、作為片材表面的改質劑的矽烷偶合劑等黏接輔助劑等。 Further, in the present invention, in the fluorenone resin composition used for producing a phosphor sheet, in order to suppress curing at normal temperature and to extend the pot life, it is preferred to prepare a hydrazine hydrogenation reaction retarder such as acetylene alcohol as another ingredient. In addition, as other As the additive, a leveling agent for stabilizing the coating film, a bonding aid such as a decane coupling agent as a modifier for the surface of the sheet, and the like may be added.

(膜厚) (film thickness)

本發明的螢光體片材的膜厚是由螢光體含量、及所需的光學特性來決定。如上所述,就作業性的觀點而言,螢光體含量存在極限,因此膜厚較佳為10μm以上。另一方面,就提高螢光體片材的光學特性.放熱性的觀點而言,螢光體片材的膜厚較佳為1000μm以下,更佳為200μm以下,尤佳為100μm以下。藉由將螢光體片材設為1000μm以下的膜厚,可減少因黏合劑樹脂或螢光體而引起的光吸收或光散射,因此成為光學性優異的螢光體片材。 The film thickness of the phosphor sheet of the present invention is determined by the phosphor content and the desired optical characteristics. As described above, the phosphor content is limited in terms of workability, and therefore the film thickness is preferably 10 μm or more. On the other hand, it improves the optical properties of the phosphor sheet. The film thickness of the phosphor sheet is preferably 1000 μm or less, more preferably 200 μm or less, and still more preferably 100 μm or less from the viewpoint of heat dissipation. By setting the phosphor sheet to a film thickness of 1000 μm or less, light absorption or light scattering due to the binder resin or the phosphor can be reduced, and thus the phosphor sheet is excellent in optical properties.

另外,若片材膜厚存在不均,則於每個LED晶片中螢光體量產生差異,結果於發光光譜(色溫度、亮度、色度)中產生不均。因此,片材膜厚的不均較佳為±5%以內,尤佳為±3%以內。 Further, when the film thickness of the sheet is uneven, a difference in the amount of phosphors occurs in each of the LED wafers, and as a result, unevenness occurs in the emission spectrum (color temperature, luminance, and chromaticity). Therefore, the unevenness of the film thickness of the sheet is preferably within ±5%, and particularly preferably within ±3%.

本發明的螢光體片材的膜厚是指基於JIS K7130(1999)塑膠-膜以及片材-厚度測定方法中的藉由機械性掃描的厚度的測定方法A法來測定的膜厚(平均膜厚)。另外,螢光體片材的膜厚不均是使用所述的平均膜厚,基於下述數學式來算出。更具體而言,使用藉由機械性掃描的厚度的測定方法A法的測定條件,且使用市售的接觸式厚度計等測微計來測定膜厚,計算出所得膜厚的最大值或者最小值與平均膜厚的差,將其值除以平均膜厚而以100分率所表示的值成為膜厚不均B(%)。 The film thickness of the phosphor sheet of the present invention is a film thickness measured by a method A for measuring the thickness by mechanical scanning in the plastic-film and sheet-thickness measuring method of JIS K7130 (1999). Film thickness). Further, the film thickness unevenness of the phosphor sheet was calculated based on the following mathematical formula using the above-described average film thickness. More specifically, the measurement conditions of the thickness measurement method by the mechanical scanning method are used, and the film thickness is measured using a micrometer such as a commercially available contact thickness meter, and the maximum or minimum thickness of the obtained film thickness is calculated. The difference between the value and the average film thickness, and the value expressed by the fraction of 100, divided by the average film thickness, becomes the film thickness unevenness B (%).

膜厚不均B(%)={(最大膜厚偏差值-平均膜厚)/平 均膜厚}×100 Film thickness unevenness B (%) = {(maximum film thickness deviation - average film thickness) / flat Mean film thickness}×100

此處,最大膜厚偏差值是選擇膜厚的最大值或者最小值中與平均膜厚的差大的值。 Here, the maximum film thickness deviation value is a value at which the difference between the maximum value and the minimum value of the film thickness and the average film thickness is large.

<支持基材> <Support substrate>

支持基材對形狀容易變形的螢光體片材加以保護,使保管或搬運、加工變得容易,並且於對LED晶片的貼附步驟中使操作變得容易,防止對加壓基材的附著或污染。 The support substrate protects the phosphor sheet which is easily deformed in shape, facilitates storage, handling, and processing, and facilitates handling in the attaching step to the LED wafer to prevent adhesion to the pressurized substrate. Or pollution.

(支持基材的物性) (support the physical properties of the substrate)

支持基材於23℃下,斷裂伸長率為200%以上,且楊氏模數為600MPa以下。若支持基材的斷裂伸長率為小於200%、或者楊氏模數大於600MPa,則於LED貼附步驟中,在側面與螢光體片材之間產生間隙,追隨性劣化。就對LED晶片的追隨性的觀點而言,斷裂伸長率較理想為300%以上,進而理想為500%以上。另外,楊氏模數較理想為400MPa以下,更理想為100MPa以下,進而理想為10MPa以下。對斷裂伸長率的上限並無特別限制,但就裁剪變得容易的觀點而言,較佳為1500%以下,更佳為1000%以下,尤佳為800%以下,特佳為750%以下。另外,對楊氏模數的下限並無特別限制,但就支持基材不會變形而保護螢光體片材的觀點而言,較佳為0.1MPa以上,更佳為1MPa以上,尤佳為1.6MPa以上。 The support substrate has an elongation at break of 200% or more at 23 ° C and a Young's modulus of 600 MPa or less. When the elongation at break of the support substrate is less than 200% or the Young's modulus is more than 600 MPa, a gap is formed between the side surface and the phosphor sheet in the LED attaching step, and the followability is deteriorated. From the viewpoint of the followability to the LED wafer, the elongation at break is preferably 300% or more, and more preferably 500% or more. Further, the Young's modulus is preferably 400 MPa or less, more preferably 100 MPa or less, and still more preferably 10 MPa or less. The upper limit of the elongation at break is not particularly limited, but is preferably 1500% or less, more preferably 1,000% or less, still more preferably 800% or less, and particularly preferably 750% or less from the viewpoint of easy cutting. Further, the lower limit of the Young's modulus is not particularly limited, but it is preferably 0.1 MPa or more, more preferably 1 MPa or more, from the viewpoint of supporting the base material without deformation and protecting the phosphor sheet. 1.6MPa or more.

斷裂伸長率以及楊氏模數的測定可利用依據 ASTM-D882-12的方法來測定。具體的測定法是於保持在一定溫度的環境下,使用拉伸試驗機,將試驗片以速度300mm/min進行拉伸。將試驗前的試驗片長度設為L0,將切斷(斷裂)時的試驗片的長度設為L時,斷裂伸長率是利用下述數學式來算出。 The elongation at break and the Young's modulus can be determined by the method according to ASTM-D882-12. The specific measurement method is to stretch the test piece at a speed of 300 mm/min using a tensile tester while maintaining the temperature at a constant temperature. When the length of the test piece before the test was L 0 and the length of the test piece at the time of cutting (fracture) was L, the elongation at break was calculated by the following mathematical formula.

斷裂伸長率(%)=100×(L-L0)/L0Elongation at break (%) = 100 × (LL 0 ) / L 0 .

另外,楊氏模數可根據試驗片將要變形之前的最大彈性、即試驗片的伸長度以及將對其施加的荷重進行製圖而得的S-S曲線的最大傾斜來求出。關於斷裂伸長率以及楊氏模數的測定次數,為了提高精度而將測定次數設為3次,求出其平均值。 Further, the Young's modulus can be obtained from the maximum inclination of the S-S curve obtained by plotting the maximum elasticity before the test piece is deformed, that is, the elongation of the test piece and the load to be applied thereto. The number of times of measurement of the elongation at break and the Young's modulus is three times in order to improve the accuracy, and the average value thereof is obtained.

螢光體片材的貼附溫度如上所述,較佳為60℃~150℃,尤佳為60℃~120℃。因此,支持基材的熱特性較佳為於該溫度範圍內不會熔解。就該觀點而言,支持基材的熔點較佳為120℃以上,尤佳為150℃以上。 The attachment temperature of the phosphor sheet is as described above, preferably 60 to 150 ° C, and more preferably 60 to 120 ° C. Therefore, the thermal properties of the support substrate are preferably such that they do not melt within this temperature range. From this point of view, the melting point of the support substrate is preferably 120 ° C or higher, and particularly preferably 150 ° C or higher.

另外,就兼具用以保持螢光體片材的黏接性、及用以在貼附於LED晶片上之後將支持基材剝離的剝離性的觀點而言,支持基材的剝離力較佳為0.5N/20mm~2.5N/20mm的範圍。此處所謂的剝離力是利用JIS Z 0237(2009)中規定的黏著帶.黏著片方法中的藉由90度剝離的黏著性試驗方法而獲得的值。 Further, the peeling force of the support substrate is preferably from the viewpoint of maintaining the adhesion of the phosphor sheet and the peeling property for peeling the support substrate after being attached to the LED wafer. It is in the range of 0.5N/20mm~2.5N/20mm. The so-called peeling force here is the adhesive tape specified in JIS Z 0237 (2009). The value obtained by the 90 degree peel adhesion test method in the adhesive sheet method.

通常就發光的均勻性的觀點而言,支持基材的表面平均粗糙度Ra較佳為1μm以下,但為了提高光取出,亦可進行壓紋 加工等表面加工。 In general, the surface average roughness Ra of the support substrate is preferably 1 μm or less from the viewpoint of uniformity of light emission, but may be embossed for the purpose of improving light extraction. Surface processing such as machining.

(支持基材的材質) (Support material of the substrate)

支持基材的材質具體而言可列舉:聚氯乙烯、聚胺基甲酸酯、矽酮、低密度聚乙烯(low density polyethylene,LDPE)、聚乙烯基縮醛等。聚氯乙烯根據塑化劑的添加量而存在硬質及軟質,但較佳為軟質者。另外,矽酮中有樹脂及橡膠,但較佳為伸縮性優異的矽酮橡膠。其中,就高伸長率、低楊氏模數、熱特性、黏接性以及剝離性的觀點而言,較佳為聚氯乙烯、聚胺基甲酸酯或者矽酮。更佳為聚氯乙烯或者聚胺基甲酸酯,特佳為軟質聚氯乙烯或者聚胺基甲酸酯,最佳為聚胺基甲酸酯(聚胺基甲酸酯膜)。 Specific examples of the material of the support substrate include polyvinyl chloride, polyurethane, fluorenone, low density polyethylene (LDPE), and polyvinyl acetal. The polyvinyl chloride is hard and soft depending on the amount of the plasticizer added, but is preferably soft. Further, the anthrone has a resin and a rubber, but is preferably an anthrone rubber which is excellent in stretchability. Among them, polyvinyl chloride, polyurethane or fluorenone is preferred from the viewpoint of high elongation, low Young's modulus, thermal properties, adhesion, and peelability. More preferably, it is a polyvinyl chloride or a polyurethane, and particularly preferably a soft polyvinyl chloride or a polyurethane, and most preferably a polyurethane (polyurethane film).

該些材質的膜例如可藉由低密度化、無延伸化、柔軟成分的單體量的增量、塑化劑的增量等,而將斷裂伸長率以及楊氏模數控制在所述的較佳範圍內。 The film of the material may be controlled by, for example, low density, no elongation, an increase in the amount of the monomer of the soft component, an increase in the plasticizer, or the like, and the elongation at break and the Young's modulus are controlled as described above. Within the preferred range.

(支持基材的膜厚) (Support film thickness of substrate)

支持基材的膜厚較佳為5μm~500μm,更佳為20μm~200μm,更佳為40μm~100μm。另外,支持基材的膜厚較佳為相對於螢光體片材膜厚而滿足以下的數學式。 The film thickness of the support substrate is preferably from 5 μm to 500 μm, more preferably from 20 μm to 200 μm, still more preferably from 40 μm to 100 μm. Further, the film thickness of the support substrate preferably satisfies the following mathematical formula with respect to the film thickness of the phosphor sheet.

1/5≦(支持基材的膜厚/螢光體片材的膜厚)≦3 1/5 ≦ (film thickness of supporting substrate / film thickness of phosphor sheet) ≦ 3

若為下限以上,則支持基材可獲得為了保護螢光體片材而充分的機械強度。另外,若為上限以下,則於螢光體片材的貼附中,可對於LED晶片而獲得充分的追隨性。就該觀點而言,(支持基 材的膜厚/螢光體片材的膜厚)的下限更佳為1/2以上。另外,上限更佳為2以下,尤佳為1以下。 When it is more than the lower limit, the support substrate can obtain sufficient mechanical strength for protecting the phosphor sheet. In addition, when it is less than the upper limit, sufficient followability can be obtained for the LED wafer in the attachment of the phosphor sheet. In this regard, (support base The lower limit of the film thickness of the material/the film thickness of the phosphor sheet is more preferably 1/2 or more. Further, the upper limit is more preferably 2 or less, and particularly preferably 1 or less.

<積層體中的其他構成> <Other constitutions in the laminated body>

本發明的積層體亦可於支持基材上具有黏著劑。圖2為具有黏著劑的積層體的例子。該情況下,以塗佈有黏著劑4的面與螢光體片材3接觸的方式形成積層體1,利用黏著劑4而將螢光體片材3固定於支持基材2上。就將螢光體片材保持在支持基材上的觀點而言,黏著劑的黏著力較佳為0.1N/20mm以上。另外,就將LED晶片以螢光體片材被覆後將支持基材剝離的觀點而言,較佳為1.0N/20mm以下。 The laminate of the present invention may also have an adhesive on the support substrate. Fig. 2 is an example of a laminate having an adhesive. In this case, the layered body 1 is formed such that the surface on which the adhesive 4 is applied is in contact with the phosphor sheet 3, and the phosphor sheet 3 is fixed to the support substrate 2 by the adhesive 4. The adhesive force of the adhesive is preferably 0.1 N/20 mm or more from the viewpoint of holding the phosphor sheet on the support substrate. Further, from the viewpoint of coating the LED wafer with the phosphor sheet and peeling the support substrate, it is preferably 1.0 N/20 mm or less.

另外,出於保護螢光體片材的表面的目的,本發明的積 層體亦可於螢光體片材上設置保護基材。保護基材可使用公知的金屬、膜、玻璃、陶瓷、紙等。具體而言可列舉:鋁(亦包括鋁合金)等的金屬板或箔,乙酸纖維素、聚對苯二甲酸乙二酯(PET)、聚乙烯、聚酯、聚醯胺、聚醯亞胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、芳族聚醯胺、氟樹脂等的膜,樹脂層壓紙、樹脂塗佈紙等加工紙。為了使螢光體片材在保管中不會附著,該些保護基材較理想為對表面預先進行剝離處理。另外,為了於保管中或者搬運中不存在螢光體片材彎折、或者表面受到損傷的情況,較佳為強度高的基材。就滿足該些要求特性的方面而言,較佳為膜或者紙,其中就經濟性及操作性的方面而言,更佳為剝離處理PET膜或者剝離紙。 In addition, for the purpose of protecting the surface of the phosphor sheet, the product of the present invention The layer body may also be provided with a protective substrate on the phosphor sheet. As the protective substrate, a known metal, film, glass, ceramic, paper, or the like can be used. Specific examples include metal sheets or foils such as aluminum (including aluminum alloys), cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, polyamide, and polyimide. A film of polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, aromatic polyamide, fluororesin, or the like, and a processed paper such as a resin laminated paper or a resin coated paper. In order to prevent the phosphor sheet from adhering during storage, it is preferable that the protective substrate is subjected to a release treatment in advance on the surface. Further, in order to prevent the phosphor sheet from being bent or the surface from being damaged during storage or transportation, a substrate having high strength is preferable. In terms of satisfying the required characteristics, a film or paper is preferable, and in terms of economy and workability, it is more preferable to peel-treat the PET film or the release paper.

<積層體的製造方法> <Method of Manufacturing Laminates>

本發明的積層體的製造方法可為可形成所述積層體的任意方法,可例示直接塗佈法、利用黏著劑的轉印法以及熱轉印法。 The method for producing the layered product of the present invention may be any method capable of forming the layered body, and examples thereof include a direct coating method, a transfer method using an adhesive, and a thermal transfer method.

直接塗佈法是於支持基材上塗佈螢光體片材製作用組成物後,進行加熱硬化的方法。此外,「螢光體片材製作用組成物」的詳情如後述,所謂「螢光體片材製作用組成物」,是指作為螢光體片材形成用的塗佈液來使用的組成物,是將螢光體分散於樹脂中的組成物。 The direct coating method is a method in which a composition for producing a phosphor sheet is coated on a support substrate and then heat-cured. In addition, the "component for producing a phosphor sheet" is a composition used as a coating liquid for forming a phosphor sheet, as described later, "a composition for producing a phosphor sheet". It is a composition in which a phosphor is dispersed in a resin.

利用黏著劑的轉印法是如下方法:將具有黏著劑的支持基材的黏著面貼合在於第2基材上製作的螢光體片材上,自第2基材上向支持基材上轉印螢光體片材。 The transfer method using an adhesive is a method in which an adhesive surface of a support substrate having an adhesive is bonded to a phosphor sheet produced on a second substrate, from the second substrate to the support substrate. Transfer the phosphor sheet.

熱轉印法是如下方法:將製作於第2基材上的螢光體片材與支持基材進行加熱壓接而自第2基材上轉印於支持基材上。 The thermal transfer method is a method in which a phosphor sheet produced on a second substrate is heated and pressure-bonded to a support substrate, and transferred onto a support substrate from a second substrate.

就製作膜厚精度高的螢光體片材的觀點而言,積層體的製造方法較佳為利用黏著劑的轉印法及熱轉印法,進而就LED晶片貼附後的支持基材的剝離性的觀點而言,較佳為熱轉印法。 From the viewpoint of producing a phosphor sheet having a high film thickness precision, the method for producing a laminate is preferably a transfer method using an adhesive and a thermal transfer method, and further, a support substrate to which the LED wafer is attached From the viewpoint of peelability, a thermal transfer method is preferred.

此處,對螢光體片材的製作進行說明。此外,以下作為一例的螢光體片材的製作方法並不限定於此。首先,製作將螢光體分散於樹脂中而成的組成物(以下稱為「螢光體片材製作用組成物」)作為螢光體片材形成用的塗佈液。出於抑制螢光體的沈降的目的,可添加矽酮微粒子,亦可添加無機微粒子、調平劑以及黏接助劑等其他的添加物。另外,於使用加成反應型矽酮樹脂作 為樹脂的情況下,亦可調配矽氫化反應延遲劑來延長適用期。為了使流動性適當,若有必要,則亦可添加溶劑而製成溶液。溶劑只要是可調整流動狀態的樹脂的黏度者,則並無特別限定。例如可列舉:甲苯、甲基乙基酮、甲基異丁基酮、己烷、丙酮、萜品醇(terpineol)等。 Here, the production of the phosphor sheet will be described. In addition, the method of producing a phosphor sheet as an example below is not limited to this. First, a composition obtained by dispersing a phosphor in a resin (hereinafter referred to as "a composition for producing a phosphor sheet") is prepared as a coating liquid for forming a phosphor sheet. For the purpose of suppressing sedimentation of the phosphor, fluorenone microparticles may be added, and other additives such as inorganic microparticles, a leveling agent, and an adhesion aid may be added. In addition, in the use of addition reaction type fluorenone resin In the case of a resin, a hydrogenation reaction retarder may also be formulated to extend the pot life. In order to make the fluidity appropriate, if necessary, a solvent may be added to prepare a solution. The solvent is not particularly limited as long as it is a viscosity of a resin in which the flow state can be adjusted. For example, toluene, methyl ethyl ketone, methyl isobutyl ketone, hexane, acetone, terpineol, etc. are mentioned.

將該些成分調合為既定的組成後,利用均質機、自轉公 轉型攪拌機、三輥機、球磨機、行星式球磨機、珠磨機等攪拌.混練機來均質地混合分散,藉此獲得螢光體片材製作用組成物。亦較佳為進行如下操作:於混合分散後、或者混合分散的過程中,於真空或者減壓條件下進行脫泡。 After the ingredients are blended into a predetermined composition, the homogenizer and the self-rotating 3. Mixing mixer, three roller machine, ball mill, planetary ball mill, bead mill, etc. The kneader was mixed and dispersed homogeneously, whereby a composition for producing a phosphor sheet was obtained. It is also preferred to carry out the following operations: defoaming under vacuum or reduced pressure during mixing or dispersion or during mixing and dispersion.

繼而,將螢光體片材製作用組成物塗佈於基材上,使其 乾燥。可利用以下塗佈機來進行塗佈:逆轉輥塗佈機(reverse roll coater)、刮刀塗佈機(blade coater)、狹縫模塗佈機(slit die coater)、直接凹版塗佈機(direct gravure coater)、間接凹版塗佈機(offset gravure coater)、逆轉輥塗佈機、刮刀塗佈機、吻合式塗佈機(kiss coater)、自然輥塗佈機(natural roll coater)、氣刀塗佈機(air knife coater)、輥刮刀塗佈機(roll blade coater)、可調刮棒輥刮刀塗佈機(vari-bar roll blade coater)、雙流塗佈機(two stream coater)、棒塗佈機(rod coater)、線棒塗佈機(wire bar coater)、敷料器(applicator)、浸漬塗佈機(dip coater)、簾幕式塗佈機(curtain coater)、旋轉塗佈機(spin coater)、刀片塗佈機(knife coater)等。為了獲得螢光體片材膜厚的均勻性,較佳為 利用狹縫模塗佈機進行塗佈。另外,本發明的螢光體片材亦可使用網版印刷或凹版印刷、平版印刷等印刷法來製作。於使用印刷法的情況下,特佳為使用網版印刷。 Then, the composition for producing a phosphor sheet is applied onto a substrate to dry. Coating can be carried out using a coating machine: a reverse roll coater, a blade coater, a slit die coater, a direct gravure coater (direct Gravure coater), offset gravure coater, reverse roll coater, knife coater, kiss coater, natural roll coater, air knife coating Air knife coater, roll blade coater, vari-bar roll blade coater, two stream coater, bar coating Rod coater, wire bar coater, applicator, dip coater, curtain coater, spin coater ), a knife coater, and the like. In order to obtain uniformity of the film thickness of the phosphor sheet, it is preferably Coating was carried out using a slit die coater. Further, the phosphor sheet of the present invention can also be produced by a printing method such as screen printing, gravure printing or lithography. In the case of using the printing method, it is particularly preferable to use screen printing.

螢光體片材的乾燥.硬化時使用熱風乾燥機或紅外線乾 燥機等一般的加熱裝置。加熱硬化條件通常為80℃~200℃下2分鐘~3小時,但為了設為可藉由加熱而軟化,表現出黏著性的所謂B階段狀態,較佳為於80℃~120℃下加熱30分鐘~2小時。 Drying of the phosphor sheet. Use a hot air dryer or infrared dry when hardening A general heating device such as a dryer. The heat-hardening condition is usually from 80 ° C to 200 ° C for 2 minutes to 3 hours, but in order to be softened by heating, a so-called B-stage state in which adhesion is exhibited is preferably carried out at 80 ° C to 120 ° C. Minutes ~ 2 hours.

於使用藉由黏著劑的轉印法及熱轉印法中所利用的第2 基材的情況下,並無特別限制,可使用公知的金屬、膜、玻璃、陶瓷、紙等。為了製作膜厚精度高的螢光體片材,較佳為於23℃下,第2基材的斷裂伸長率為小於200%、或者楊氏模數為大於600MPa,特別是楊氏模數更佳為4000MPa以上。另外,較佳為於樹脂的硬化反應快速進行的150℃以上的溫度下變形少的基材。 For the second use of the transfer method by the adhesive and the thermal transfer method In the case of the substrate, it is not particularly limited, and a known metal, film, glass, ceramic, paper, or the like can be used. In order to produce a phosphor sheet having a high film thickness precision, it is preferred that the second substrate has an elongation at break of less than 200% at 23 ° C or a Young's modulus of more than 600 MPa, particularly a Young's modulus. Good is 4000MPa or more. Further, it is preferably a substrate which is less deformed at a temperature of 150 ° C or higher which is rapidly progressed by the curing reaction of the resin.

具體而言,可列舉:鋁(亦包含鋁合金)、鋅、銅、鐵 等的金屬板或箔,乙酸纖維素、聚對苯二甲酸乙二酯(PET)、聚乙烯、聚酯、聚醯胺、聚醯亞胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、聚乙烯基縮醛、芳族聚醯胺等的塑膠膜,層壓有所述塑膠的紙、或者經所述塑膠來塗佈的紙、層壓或者蒸鍍有所述金屬的紙、層壓或者蒸鍍有所述金屬的塑膠膜等。 Specifically, aluminum (also including aluminum alloy), zinc, copper, iron Metal sheets or foils, cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, a plastic film of polycarbonate, polyvinyl acetal, aromatic polyamine, or the like, paper laminated with the plastic, or paper coated with the plastic, laminated or vapor-deposited with the metal Paper, laminated or vapor-deposited plastic film of the metal.

該些基材中,就所述的要求特性或經濟性的方面而言, 較佳為樹脂膜,特佳為PET膜或者聚苯硫醚膜。另外,於樹脂的硬化或將螢光體片材貼附於LED上時需要200℃以上的高溫的情 況下,就耐熱性的方面而言較佳為聚醯亞胺膜。 Among the substrates, in terms of the required characteristics or economics, A resin film is preferred, and a PET film or a polyphenylene sulfide film is particularly preferred. In addition, when the resin is hardened or the phosphor sheet is attached to the LED, a high temperature of 200 ° C or higher is required. In the case of heat resistance, a polyimide film is preferred.

另外,為了使螢光體片材的轉印容易,第2基材較佳為預先對表面進行剝離處理。 Moreover, in order to facilitate the transfer of the phosphor sheet, it is preferred that the second substrate be subjected to a release treatment in advance.

第2基材的厚度並無特別限制,下限較佳為30μm以上,更佳為50μm以上。另外,上限較佳為5000μm以下,更佳為3000μm以下。 The thickness of the second substrate is not particularly limited, and the lower limit is preferably 30 μm or more, and more preferably 50 μm or more. Further, the upper limit is preferably 5,000 μm or less, more preferably 3,000 μm or less.

利用黏著劑自第2基材向支持基材上的轉印較理想為以不會產生空氣的進入的方式,利用帶有輥的層壓機來進行。 The transfer from the second substrate to the support substrate by the adhesive is preferably carried out by a laminator equipped with a roll so as not to cause air to enter.

另外,自第2基材向支持基材上的熱轉印較理想為利用包括加熱機構及加壓機構的熱層壓機來進行。此處,就使螢光體片材軟化而表現出黏著性的觀點而言,熱轉印較佳為於60℃以上進行。另外,就保持螢光體片材的B階段狀態(即半硬化的狀態)的觀點而言,較佳為於120℃以下進行。另外,就維持膜厚均勻性的觀點而言,加壓壓力較佳為0.3MPa以下,加壓時間較佳為30秒以下,更佳為10秒以下。 Further, the thermal transfer from the second substrate to the support substrate is preferably carried out by a thermal laminator including a heating mechanism and a pressurizing mechanism. Here, from the viewpoint of softening the phosphor sheet and exhibiting adhesiveness, the thermal transfer is preferably carried out at 60 ° C or higher. Further, from the viewpoint of maintaining the B-stage state (that is, the semi-hardened state) of the phosphor sheet, it is preferably carried out at 120 ° C or lower. Further, from the viewpoint of maintaining the uniformity of the film thickness, the pressurizing pressure is preferably 0.3 MPa or less, and the pressurizing time is preferably 30 seconds or shorter, more preferably 10 seconds or shorter.

<發光裝置的製造方法> <Method of Manufacturing Light Emitting Device>

對使用本發明的積層體的發光裝置的製造方法進行說明。 A method of manufacturing a light-emitting device using the laminate of the present invention will be described.

本發明中,較佳為利用包括以下步驟(被覆步驟)的製造方法,來製造發光裝置:將接合(安裝)於基板上的LED晶片的發光面以本發明的積層體的螢光體片材進行被覆的步驟。 In the present invention, it is preferable to manufacture a light-emitting device by using a manufacturing method including the following step (coating step): a light-emitting surface of an LED wafer bonded (mounted) on a substrate, and a phosphor sheet of the laminated body of the present invention The step of covering.

另外,於LED晶片的發光面為LED晶片的上表面及側面的情況等,較佳為利用包括以下步驟(被覆步驟)的製造方法, 來製造發光裝置:將接合(安裝)於基板上的LED晶片的上表面及側面以本發明的積層體的螢光體片材進行被覆的步驟。 Further, in the case where the light-emitting surface of the LED wafer is the upper surface and the side surface of the LED wafer, it is preferable to use a manufacturing method including the following steps (coating step). Manufacturing of a light-emitting device: a step of coating a phosphor sheet of a laminate of the present invention on an upper surface and a side surface of an LED wafer bonded (mounted) on a substrate.

如上所述,使用本發明的積層體的發光裝置較佳為藉由 在基板上接合(安裝)LED晶片後,使用本發明的積層體,將LED晶片的上部發光面以及側部發光面以螢光體片材進行被覆來製造。 As described above, the light-emitting device using the laminate of the present invention is preferably provided by After the LED wafer is bonded (mounted) to the substrate, the upper light-emitting surface and the side light-emitting surface of the LED wafer are coated with a phosphor sheet using the laminate of the present invention.

所謂基板,是指將LED晶片固定且與配線連接的基板。 基板可為例如基礎基板,亦可為副安裝(sub-mount)基板。基板的材料並無特別限定,可例示:聚鄰苯二甲醯胺(polyphthalamide,PPA)、液晶聚合物、矽酮等樹脂、氮化鋁(AlN)、氧化鋁(Al2O3)、氮化硼(BN)等陶瓷、鋁等金屬。 The substrate refers to a substrate in which an LED wafer is fixed and connected to a wiring. The substrate may be, for example, a base substrate or a sub-mount substrate. The material of the substrate is not particularly limited, and examples thereof include a polyphthalamide (PPA), a liquid crystal polymer, a resin such as an anthrone, aluminum nitride (AlN), alumina (Al 2 O 3 ), and nitrogen. A ceramic such as boron (BN) or a metal such as aluminum.

於基板上使用例如利用銀等來形成電極圖案者。另外亦 可包括放熱機構。 For example, a person who forms an electrode pattern using silver or the like is used on the substrate. Also An exothermic mechanism can be included.

LED晶片較佳為發出藍色光或者紫外光的晶片。此種 LED晶片特佳為氮化鎵系的LED晶片。 The LED chip is preferably a wafer that emits blue light or ultraviolet light. Such The LED chip is particularly preferably a gallium nitride-based LED chip.

LED晶片的型式可使用側位型、垂直型、倒裝晶片型的任一種,但就高亮度、高放熱性的觀點而言,特佳為倒裝晶片型。本發明中,所謂LED晶片接合(安裝)於基板上,較佳為LED晶片電性接合於基板上的狀態。關於倒裝晶片的接合(安裝),可列舉:焊料接合、共晶接合、導電性膏接合。 The type of the LED chip can be either a lateral type, a vertical type, or a flip chip type, but it is particularly preferably a flip chip type from the viewpoint of high luminance and high heat dissipation. In the present invention, the LED wafer is bonded (mounted) on the substrate, and preferably the LED wafer is electrically bonded to the substrate. As for the bonding (mounting) of the flip chip, solder bonding, eutectic bonding, and conductive paste bonding are mentioned.

LED晶片可單獨接合(安裝)於基板上,亦可於基板上接合(安裝)多個。另外,可對各個封裝體分別以螢光體片材進 行被覆,亦可將排列有多個封裝體者總括地以螢光體片材進行被覆,然後藉由切割等而單片化。 The LED chips can be individually bonded (mounted) on the substrate, or a plurality of bonded (mounted) on the substrate. In addition, each package can be separately made of a phosphor sheet. In the case of line coating, a plurality of packages may be collectively covered with a phosphor sheet, and then diced by cutting or the like.

LED晶片的膜厚並無特別限定,就於LED晶片上表面 或角部,降低對螢光體片材施加的壓力,維持膜厚均勻性的觀點而言,較佳為500μm以下,更佳為300μm以下,尤佳為200μm以下。 The film thickness of the LED wafer is not particularly limited as it is on the upper surface of the LED wafer. The corner portion is preferably 500 μm or less, more preferably 300 μm or less, and even more preferably 200 μm or less from the viewpoint of reducing the pressure applied to the phosphor sheet and maintaining the uniformity of the film thickness.

另外,LED晶片以及與基板的連接部的合計膜厚和螢光 體片材的膜厚較佳為滿足以下的關係式。 In addition, the total thickness and fluorescence of the LED chip and the connection portion with the substrate The film thickness of the body sheet preferably satisfies the following relationship.

1≦(LED晶片以及與基板的連接部的合計膜厚/螢光體 片材的膜厚)≦10。 1≦ (the total film thickness/phosphor of the LED chip and the connection portion with the substrate) The film thickness of the sheet is ≦10.

若為下限以上,則容易抑制發光色的方位不均。另外, 若為上限以下,則容易維持螢光體片材膜厚均勻性。就該觀點而言,下限較佳為2以上。另外,上限較佳為5以下,更佳為4以下。 If it is more than the lower limit, it is easy to suppress the orientation unevenness of the luminescent color. In addition, When it is less than the upper limit, it is easy to maintain the film thickness uniformity of the phosphor sheet. From this point of view, the lower limit is preferably 2 or more. Further, the upper limit is preferably 5 or less, more preferably 4 or less.

就使螢光體片材軟化而表現出黏著性的方面而言,本發 明的積層體於LED晶片上的貼附較佳為於加熱條件下進行。就螢光體片材充分軟化,且不進行急遽的硬化的方面,加熱溫度較佳為60℃~150℃,更佳為60℃~120℃。 In terms of softening the phosphor sheet to exhibit adhesion, the present invention The attachment of the laminate to the LED wafer is preferably carried out under heating. The heating temperature is preferably from 60 ° C to 150 ° C, more preferably from 60 ° C to 120 ° C, insofar as the phosphor sheet is sufficiently softened and hardly hardened.

另外,就提高對晶片側面的追隨性的觀點而言,積層體 於LED晶片上的貼附較佳為於加壓條件下進行。就可將螢光體片材按壓於LED晶片側面,且可維持膜厚的方面而言,壓力較佳為0.1MPa~0.3MPa。 In addition, in terms of improving the followability to the side of the wafer, the laminated body Attachment to the LED wafer is preferably carried out under pressurized conditions. The pressure sheet is preferably pressed from the side of the LED wafer to the side of the LED wafer, and the pressure is preferably 0.1 MPa to 0.3 MPa.

具體而言,加壓方法可例示:使可撓性片材膨脹而按壓的方法、注入空氣等氣體而以非接觸方式按壓的方法、壓下沿著LED晶片的形狀的模具而按壓的方法、或者以輥來按壓的方法。另外,亦可將該些方法組合多種。 Specifically, a method of pressurizing and pressing the flexible sheet, a method of injecting a gas such as air, and a method of pressing in a non-contact manner, and a method of pressing the mold along the shape of the LED wafer, Or a method of pressing with a roller. In addition, a plurality of methods can be combined.

進而,為了防止空氣進入螢光體片材與LED晶片以及基板之間,積層體於LED晶片上的貼附較佳為於真空環境條件下進行。 Further, in order to prevent air from entering between the phosphor sheet and the LED wafer and the substrate, the adhesion of the laminate to the LED wafer is preferably performed under vacuum conditions.

使用本發明的積層體來進行於LED晶片上的貼附的裝置只要滿足所述條件,則並無特別限定,就通用性高且生產性優異的方面而言,較佳為具有真空腔室的真空積層裝置,所述真空腔室設置有於壓板上附設有可撓性片材的壓緊機構。此種真空積層裝置例如可例示日本專利3646042號公報中記載的裝置。 The apparatus for attaching to the LED wafer by using the laminated body of the present invention is not particularly limited as long as the above conditions are satisfied, and it is preferable to have a vacuum chamber in terms of high versatility and excellent productivity. A vacuum laminating device is provided with a pressing mechanism to which a flexible sheet is attached to a press plate. Such a vacuum laminating apparatus can be exemplified by the apparatus described in Japanese Patent No. 3,664,402.

於圖3a~圖3f中對使用此種真空積層裝置的發光裝置的製造方法的一例進行說明。該真空積層裝置包括真空腔室5,所述真空腔室5包括:壓緊機構11,其具備上部壓板6、可撓性片材8以及由該些構件包圍的密閉空間9及空氣注入.排出口10;具有加熱器的下部壓板7;以及另一空氣注入.排出口12。於該下部壓板7上設置接合(安裝)有LED晶片14的基板13,進而,以螢光體片材3與LED晶片表面接觸的朝向,將包含支持基材2及螢光體片材3而成的積層體1依次重疊(圖3a)。繼而,自空氣注入.排出口10以及空氣注入.排出口12,向圖3b中點線所表示的箭頭的方向排出(排成真空)空氣,藉此使真空腔室5以及壓緊機 構11的密閉空間9內成為真空環境(圖3b)。接著,一邊利用未圖示的加熱器對下部壓板7進行加熱,一邊自空氣注入.排出口10向圖3c的箭頭的方向注入空氣,藉此向壓緊機構11的密閉空間9中注入空氣,使可撓性片材8膨脹而將積層體1貼附於LED晶片14上(圖3c)。然後,自空氣注入.排出口12向圖3d的箭頭的方向注入空氣,藉此向真空腔室5內注入空氣而恢復為常壓(圖3d),取出發光裝置15(圖3e)。最後自貼附於發光裝置15上的積層體1上去除支持基材2(圖3f)。如上所述,本發明的發光裝置較佳為最終為如圖3f所示的不含支持基材的構成。其原因在於,發光裝置是以自發光裝置的積層體上去除了支持基材的構成來使用,或流通的情況多。 An example of a method of manufacturing a light-emitting device using such a vacuum lamination device will be described with reference to FIGS. 3a to 3f. The vacuum laminating device comprises a vacuum chamber 5, the vacuum chamber 5 comprises: a pressing mechanism 11 comprising an upper pressing plate 6, a flexible sheet 8 and a closed space 9 surrounded by the members and air injection. Discharge port 10; lower platen 7 with heater; and another air injection. Discharge port 12. The lower platen 7 is provided with a substrate 13 to which the LED chip 14 is bonded (mounted), and further, the support substrate 2 and the phosphor sheet 3 are included in a direction in which the phosphor sheet 3 is in contact with the surface of the LED chip. The laminated bodies 1 are sequentially overlapped (Fig. 3a). Then, inject from the air. Discharge port 10 and air injection. The discharge port 12 discharges (discharges) air in the direction of the arrow indicated by the dotted line in Fig. 3b, thereby making the vacuum chamber 5 and the compactor The inside of the sealed space 9 of the structure 11 becomes a vacuum environment (Fig. 3b). Next, the lower platen 7 is heated by a heater (not shown) and injected from the air. The discharge port 10 injects air in the direction of the arrow of FIG. 3c, thereby injecting air into the sealed space 9 of the pressing mechanism 11, and expanding the flexible sheet 8 to attach the laminated body 1 to the LED wafer 14 (Fig. 3c). Then, inject from the air. The discharge port 12 injects air in the direction of the arrow of Fig. 3d, thereby injecting air into the vacuum chamber 5 to return to normal pressure (Fig. 3d), and taking out the light-emitting device 15 (Fig. 3e). Finally, the support substrate 2 is removed from the laminated body 1 attached to the light-emitting device 15 (Fig. 3f). As described above, the light-emitting device of the present invention preferably has a configuration that does not include a support substrate as shown in Fig. 3f. The reason for this is that the light-emitting device is used in a configuration in which the support substrate is removed from the laminate of the self-luminous device, or it is often used for distribution.

如上所述,藉由使用本發明的積層體,可藉由一個階段 的按壓而將螢光體片材被覆於LED晶片上,可提供生產性高的發光裝置的製造方法。 As described above, by using the laminated body of the present invention, one stage can be utilized By pressing the phosphor sheet on the LED wafer, a method of manufacturing a highly efficient light-emitting device can be provided.

另外,例如,於如專利文獻2所記載的現有的二階段按 壓法,即連續進行利用可撓性片材的接觸按壓與藉由空氣注入的非接觸按壓的方法中,亦可適宜使用本發明的積層體。 Further, for example, the existing two-stage press as described in Patent Document 2 The pressure method, that is, the method of continuously performing the contact pressing by the flexible sheet and the non-contact pressing by the air injection, can also suitably use the laminated body of the present invention.

特別是於將在基板上以1000μm以下的間隔排列的多個 LED晶片以螢光體片材進行被覆的情況下,存在即便單獨使用二階段按壓法,亦無法獲得充分的貼附精度(被覆精度)的傾向。 但是,即便為此種情況,亦可藉由使用二階段按壓法,此外,使用利用楊氏模數小的支持基材的本發明積層體,而以高精度進行 被覆。 In particular, a plurality of layers arranged on the substrate at intervals of 1000 μm or less When the LED wafer is covered with a phosphor sheet, even if the two-stage pressing method is used alone, sufficient attaching accuracy (coating accuracy) cannot be obtained. However, even in this case, the two-stage pressing method can be used, and the laminated body of the present invention using a supporting substrate having a small Young's modulus can be used with high precision. Covered.

<發光裝置> <Lighting device>

對使用本發明的積層體而獲得的發光裝置進行說明。圖4是將經由凸塊18(例如金製的凸塊)而接合於基板13上的LED晶片14以螢光體片材3進行被覆的發光裝置(一例)的剖面以及上表面的示意圖。 A light-emitting device obtained by using the laminate of the present invention will be described. 4 is a schematic view showing a cross section and an upper surface of a light-emitting device (an example) in which the LED wafer 14 bonded to the substrate 13 via the bump 18 (for example, a bump made of gold) is covered with the phosphor sheet 3 .

於圖4的下部示出發光裝置的上表面的示意圖。此處,16表示LED晶片上表面及側面的被覆部,17表示基材的被覆部。 A schematic view of the upper surface of the light-emitting device is shown in the lower portion of FIG. Here, 16 denotes a coating portion on the upper surface and the side surface of the LED wafer, and 17 denotes a coating portion of the substrate.

另一方面,於圖4的上部示出發光裝置的剖面。示於圖4的上部的剖面圖示出俯視圖中的虛線II的位置中者作為例子。此種被覆螢光體片材的晶片的剖面可利用以下方法來確認:利用機械研磨法或離子研磨法(包括剖面拋光法(cross section polishing method))等來製作剖面(使剖面露出),利用數位顯微鏡(digital microscope)或掃描型電子顯微鏡(SEM)來觀察所述剖面的方法;或者不經過研磨等剖面製作步驟,以非破壞的形式藉由X射線電腦斷層(computed tomography,CT)掃描來觀察所述剖面的方法。 On the other hand, a cross section of the light-emitting device is shown in the upper portion of FIG. The cross-sectional view shown in the upper part of FIG. 4 shows the position of the broken line II in the top view as an example. The cross section of the wafer coated with the phosphor sheet can be confirmed by a mechanical polishing method or an ion polishing method (including a cross section polishing method) to form a cross section (exposing the cross section). A digital microscope or a scanning electron microscope (SEM) to observe the profile; or a cross-section fabrication process without grinding, by X-ray computed tomography (CT) scan in a non-destructive form A method of observing the profile.

發光裝置至少包括:基板、接合(安裝)於基板上的LED晶片、以及被覆LED晶片的發光面的螢光體片材。此處所謂發光面,是指LED的光被取出的面。根據發光面的分類可例示:以如倒裝晶片型或側位型晶片的方式自上表面及側面取出光的類型、或以如垂直型的方式僅自上表面取出光的類型。進而,亦可 列舉設置倒裝晶片的側面反射層且僅自上表面取出光的類型作為例子。另外,出於黏接性賦予等目的,亦可於螢光體片材與LED的發光面之間存在透明樹脂。此處,透明樹脂可例示丙烯酸、環氧、矽酮等熱硬化性樹脂,其中就耐熱性、耐光性的觀點而言,最佳為矽酮樹脂。 The light emitting device includes at least a substrate, an LED chip bonded (mounted) on the substrate, and a phosphor sheet covering the light emitting surface of the LED wafer. The term "light emitting surface" as used herein refers to a surface on which light of an LED is taken out. Depending on the classification of the light-emitting surface, a type in which light is taken out from the upper surface and the side surface such as a flip chip type or a side-type wafer, or a type in which light is taken out from the upper surface only in a vertical type can be exemplified. Furthermore, A type in which a side reflection layer of a flip chip is provided and only light is taken out from the upper surface is exemplified. Further, for the purpose of imparting adhesion or the like, a transparent resin may be present between the phosphor sheet and the light emitting surface of the LED. Here, the transparent resin may, for example, be a thermosetting resin such as acrylic acid, epoxy or fluorenone, and among them, an oxime resin is preferable from the viewpoint of heat resistance and light resistance.

所述中,就可擴大發光角,且可減少方位不均的觀點而言,螢光體片材較佳為被覆LED晶片的上表面及側面。更佳為螢光體片材與LED晶片的上表面及側面直接密接而被覆。藉由使用本發明的積層體,可製作自積層體上貼附的螢光體片材與LED晶片的上部發光面面積的80%以上以及側部發光面積的50%以上直接密接而被覆的發光裝置。最終,亦可製作自積層體上貼附的螢光體片材與LED晶片的上部發光面面積的100%以上以及側部發光面積的50%以上直接密接而被覆的發光裝置。 In the above, from the viewpoint of widening the illuminating angle and reducing the unevenness of the orientation, the phosphor sheet preferably covers the upper surface and the side surface of the LED wafer. More preferably, the phosphor sheet is directly adhered to the upper surface and the side surface of the LED wafer. By using the laminate of the present invention, it is possible to produce a luminescence in which the phosphor sheet attached to the laminate is 80% or more of the upper surface area of the LED wafer and 50% or more of the side illuminating area is directly adhered to each other. Device. Finally, a light-emitting device in which the phosphor sheet attached to the laminate is 100% or more of the upper light-emitting surface area of the LED wafer and 50% or more of the side light-emitting area can be directly adhered to each other can be produced.

此處,所謂「直接密接」,是指在螢光體片材與LED晶 片的上部發光面或者側部發光面之間,於不存在空隙等的情況下黏接的狀態。於對LED晶片上部發光面的被覆中,若直接密接部減少,則存在螢光體片材容易剝離,成為發光裝置的不良的原因的情況。本發明中,若直接密接部實質上為LED晶片上部發光面面積的80%以上,則難以產生螢光體片材的剝離,可抑制發光裝置的不良。就該觀點而言,直接密接部更佳為上部發光面面積的90%以上,最佳為實質上為100%。所謂直接密接部實質上為100%,是指當使用顯微鏡,以500倍的倍率來觀察由螢光體片材 所被覆的LED晶片的剖面時,相對於LED晶片的發光面的區域,與該LED晶片(發光面)直接密接的螢光體片材的區域為100%的狀態。 Here, the term "direct close contact" refers to a phosphor sheet and a LED crystal. A state in which the upper light-emitting surface or the side light-emitting surface of the sheet is bonded to each other without a void or the like. In the coating of the upper surface of the LED chip, if the direct adhesion portion is reduced, the phosphor sheet may be easily peeled off, which may cause a defect in the light-emitting device. In the present invention, when the direct contact portion is substantially 80% or more of the area of the upper surface of the LED wafer, it is difficult to cause peeling of the phosphor sheet, and the defect of the light-emitting device can be suppressed. From this point of view, the direct adhesion portion is more preferably 90% or more of the area of the upper light-emitting surface, and most preferably substantially 100%. The direct adhesion portion is substantially 100%, which means that when a microscope is used, the sheet of the phosphor is observed at a magnification of 500 times. In the cross section of the LED chip to be covered, the region of the phosphor sheet that is in direct contact with the LED chip (light emitting surface) is in a state of 100% with respect to the region of the light emitting surface of the LED chip.

另外,若於LED晶片的發光面與螢光體片材之間存在 折射率小的空氣層,則光取出效率下降。因此,若於對LED晶片的側部發光面的被覆中,直接密接部實質上小於LED晶片的側部發光面積的50%,則存在源自LED晶片側面的發光效率降低,亮度下降的情況。即,若於對LED晶片的側部發光面的被覆中,直接密接部為LED晶片的側部發光面積的50%以上,則可抑制源自LED晶片側面的光取出效率的下降。就該觀點而言,直接密接部較佳為LED晶片側部發光面積的70%以上,更佳為90%以上。 In addition, if there is a light emitting surface between the LED chip and the phosphor sheet When the air layer has a small refractive index, the light extraction efficiency is lowered. Therefore, in the coating of the side surface light-emitting surface of the LED wafer, the direct adhesion portion is substantially smaller than 50% of the side-light-emitting area of the LED wafer, and the light-emitting efficiency from the side surface of the LED wafer is lowered, and the luminance is lowered. In other words, in the coating of the side surface light-emitting surface of the LED wafer, if the direct-contact portion is 50% or more of the side-light-emitting area of the LED wafer, it is possible to suppress a decrease in light extraction efficiency from the side surface of the LED chip. From this point of view, the direct adhesion portion is preferably 70% or more, more preferably 90% or more of the light-emitting area of the side surface of the LED wafer.

於使用本發明的積層體而獲得的發光裝置中,就抑制發 光的方位不均的觀點而言,較佳為被覆LED晶片的螢光體片材的膜厚於任一部位均為變化小,進而,與源自晶片上表面的發光相比,源自側面的發光強度弱,因此較佳為與晶片上表面部的膜厚相比,LED晶片側面部的膜厚薄。此處所謂發光的方位不均,是表示發光裝置的光的觀看方式根據角度而不同。此種方位不均可藉由相對於發光裝置的LED晶片上表面而在垂直方向上離開10cm的距離中的色溫度(以下為垂直色溫度)、與在傾斜45°上方離開10cm的距離中的色溫度(以下為45°色溫度)的差的絕對值的大小來判定。本發明中,該差的絕對值越小,發光的方位不均越小,因此較佳。 In the light-emitting device obtained by using the laminate of the present invention, the emission is suppressed From the viewpoint of uneven orientation of light, it is preferable that the thickness of the phosphor sheet covering the LED wafer is small in any portion, and further, the surface is derived from the side surface compared with the light emitted from the upper surface of the wafer. Since the light emission intensity is weak, it is preferable that the film thickness of the side surface portion of the LED wafer is thinner than the film thickness of the upper surface portion of the wafer. Here, the azimuth unevenness of the light emission means that the light viewing mode of the light-emitting device differs depending on the angle. Such an orientation may not be the color temperature in the distance of 10 cm in the vertical direction (hereinafter, the vertical color temperature) with respect to the upper surface of the LED wafer of the light-emitting device, and the distance of 10 cm above the inclination of 45°. The magnitude of the absolute value of the difference in color temperature (hereinafter, 45° color temperature) is determined. In the present invention, the smaller the absolute value of the difference is, the smaller the orientation unevenness of the light emission is, which is preferable.

就該觀點而言,本發明中,若將於LED晶片14與螢光 體片材3在LED晶片14的上表面接觸的部分(區域)中,自LED晶片14的上表面至螢光體片材3的外表面為止的距離設為距離a[μm],且將於LED晶片14與螢光體片材3在LED晶片14的側面接觸的部分(區域)中,自LED晶片14的側面至螢光體片材3的外表面為止的距離設為距離b[μm],則就抑制發光不均的觀點而言,較佳為滿足0.80<a/b<1.50的關係,更佳為1.00<a/b<1.20,尤佳為1.00<a/b<1.05。 In this regard, in the present invention, if the LED chip 14 and the fluorescent film are to be In a portion (region) where the body sheet 3 is in contact with the upper surface of the LED wafer 14, the distance from the upper surface of the LED wafer 14 to the outer surface of the phosphor sheet 3 is set to a distance a [μm], and In a portion (region) where the LED wafer 14 and the phosphor sheet 3 are in contact with the side surface of the LED wafer 14, the distance from the side surface of the LED wafer 14 to the outer surface of the phosphor sheet 3 is set to a distance b [μm] Further, from the viewpoint of suppressing unevenness in light emission, it is preferable to satisfy the relationship of 0.80 < a / b < 1.50, more preferably 1.00 < a / b < 1.20, and particularly preferably 1.00 < a / b < 1.05.

即,本發明的發光裝置較佳為[a/b]的關係滿足所述範 圍。另外,當製造如上所述的發光裝置時,較佳為採用於所得的發光裝置中,[a/b]的關係滿足所述範圍的製造方法。 That is, the light-emitting device of the present invention preferably has a relationship of [a/b] satisfying the above-mentioned Wai. Further, when manufacturing the light-emitting device as described above, it is preferable to use a method in which the relationship of [a/b] satisfies the above range in the obtained light-emitting device.

因此,為了滿足所述關係,用以獲得本發明的發光裝置 的較佳的製造方法包括如下步驟(被覆步驟):利用本發明的積層體的螢光體片材,將接合於基板上的LED晶片(特別是LED晶片的發光面、或者上表面及側面)進行被覆。 Therefore, in order to satisfy the relationship, a light-emitting device of the present invention is obtained. A preferred manufacturing method includes the following steps (coating step): using the phosphor sheet of the laminate of the present invention, the LED wafer (especially the light emitting surface, or the upper surface and the side surface of the LED wafer) bonded to the substrate Carry out the cover.

如上所述,用以獲得本發明的發光裝置的製造方法較佳為於以本發明的積層體的螢光體片材進行被覆的步驟(被覆步驟)中,滿足所述關係的發光裝置的製造方法。 As described above, in the step of obtaining the light-emitting device of the present invention, it is preferable to manufacture the light-emitting device that satisfies the relationship in the step of coating the coated phosphor sheet of the present invention (coating step). method.

[實施例] [Examples]

以下,藉由實施例,對本發明進行具體說明。 Hereinafter, the present invention will be specifically described by way of examples.

<螢光體片材> <Silver sheet>

.矽酮樹脂1: 樹脂主成分 . Anthrone resin 1: Resin principal component

※其中,Me:甲基、Vi:乙烯基、Ph:苯基 ※ Among them, Me: methyl, Vi: vinyl, Ph: phenyl

.矽酮樹脂2:KER6075(信越化學工業製造) . Anthrone resin 2: KER6075 (manufactured by Shin-Etsu Chemical Co., Ltd.)

.螢光體1:NYAG-02(英特美(Intematix)公司製造:摻有Ce的YAG系螢光體,比重:4.8g/cm3,D50:7μm)。 . Phosphor 1: NYAG-02 (manufactured by Intematix Co., Ltd.: YAG-based phosphor doped with Ce, specific gravity: 4.8 g/cm 3 , D50: 7 μm).

(螢光體片材的貯存彈性模數測定方法) (Method for measuring storage elastic modulus of phosphor sheet)

測定裝置:黏彈性測定裝置ARES-G2(TA儀器(TA Instruments)製造) Measuring device: viscoelasticity measuring device ARES-G2 (manufactured by TA Instruments)

幾何形狀:平行圓板型(15mm) Geometric shape: parallel circular plate type (15mm)

應變:1% Strain: 1%

角頻率:1Hz Angular frequency: 1Hz

溫度範圍:25℃~140℃ Temperature range: 25 ° C ~ 140 ° C

升溫速度:5℃/min Heating rate: 5 ° C / min

測定環境:大氣中。 Measuring environment: in the atmosphere.

將膜厚為50μm的螢光體片材積層16片,於100℃的加熱板 上進行加熱壓接而製作800μm的經一體化的膜(片材),切割為直徑15mm來作為測定樣品。使用所述條件對該樣品進行測定,測定25℃以及100℃下的貯存彈性模數。 16 sheets of phosphor sheets having a film thickness of 50 μm were laminated on a heating plate at 100 ° C The integrated film (sheet) of 800 μm was produced by heating and pressure bonding, and cut into a diameter of 15 mm to prepare a measurement sample. The sample was measured using the conditions described, and the storage elastic modulus at 25 ° C and 100 ° C was measured.

(螢光體片材的製造方法) (Manufacturing method of phosphor sheet) [螢光體片材的製造例1] [Production Example 1 of Phosphor Sheet]

使用容積為300ml的聚乙烯製容器,以矽酮樹脂1為30重量%、螢光體1為70重量%的比率進行混合。然後,使用行星式攪拌.脫泡裝置「馬澤魯斯塔(Mazerustar)KK-400」(倉紡(Kurabo)製造),以1000rpm進行20分鐘攪拌.脫泡而獲得片材作成用螢光體分散液。使用狹縫模塗佈機,將片材作成用螢光體分散液塗佈於作為基材的「賽拉皮爾(Cerapeel)」WDS(東麗膜加工股份有限公司製造;膜厚為50μm,斷裂伸長率為115%,楊氏模數為4500MPa)的剝離面上,於120℃下進行1小時加熱、乾燥而獲得膜厚為50μm、100mm見方的螢光體片材1。該螢光體片材的貯存彈性模數於25℃下為1.0MPa,且於100℃下為0.025MPa。 A polyethylene container having a volume of 300 ml was used, and the mixture was mixed at a ratio of 30% by weight of the fluorenone resin 1 and 70% by weight of the phosphor 1. Then, use planetary mixing. The defoaming device "Mazerustar KK-400" (manufactured by Kurabo) was stirred at 1000 rpm for 20 minutes. Defoaming was carried out to obtain a phosphor dispersion liquid for sheet production. Using a slit die coater, the sheet was applied as a phosphor dispersion liquid to a "Cerapeel" WDS (manufactured by Toray Film Processing Co., Ltd. as a substrate; film thickness was 50 μm, and the film was broken. The peeling surface of the elongation rate of 115% and the Young's modulus of 4500 MPa was heated at 120 ° C for 1 hour, and dried to obtain a phosphor sheet 1 having a film thickness of 50 μm and 100 mm square. The storage elastic modulus of the phosphor sheet was 1.0 MPa at 25 ° C and 0.025 MPa at 100 ° C.

[螢光體片材的製造例2] [Production Example 2 of Phosphor Sheet]

除了使用矽酮樹脂2來代替矽酮樹脂1以外,以與製造例1相同的方式獲得膜厚為50μm、100mm見方的螢光體片材2。該螢光體片材的貯存彈性模數於25℃下為1.1MPa,且於100℃下為0.35MPa。 A phosphor sheet 2 having a film thickness of 50 μm and 100 mm square was obtained in the same manner as in Production Example 1 except that the fluorenone resin 2 was used instead of the fluorenone resin 1. The storage elastic modulus of the phosphor sheet was 1.1 MPa at 25 ° C and 0.35 MPa at 100 ° C.

<積層體> <Laminated body> (支持基材) (support substrate)

支持基材的23℃下的斷裂伸長率、楊氏模數是使用滕喜龍(Tensilon)RTF-1310(A & D製造),利用依據ASTM-D882-12的方法來測定3次,求出其平均值。 The elongation at break and the Young's modulus at 23 ° C of the support substrate were determined by using Tensilon RTF-1310 (manufactured by A & D), and were measured three times by the method according to ASTM-D882-12. average value.

試樣尺寸:寬度為10mm、初始長度為30mm Sample size: width 10mm, initial length 30mm

測定條件:溫度為23℃、拉伸速度為300mm/min。 Measurement conditions: a temperature of 23 ° C and a tensile speed of 300 mm / min.

.支持基材1:聚胺基甲酸酯膜,MG90(武田產業製造) . Supporting substrate 1: Polyurethane film, MG90 (manufactured by Takeda Industry Co., Ltd.)

膜厚為50μm、斷裂伸長率為500%、楊氏模數為8MPa The film thickness is 50 μm, the elongation at break is 500%, and the Young's modulus is 8 MPa.

.支持基材2:聚胺基甲酸酯膜,MG90(武田產業製造) . Supporting substrate 2: Polyurethane film, MG90 (manufactured by Takeda Industry Co., Ltd.)

膜厚為100μm、斷裂伸長率為750%、楊氏模數為8MPa The film thickness is 100 μm, the elongation at break is 750%, and the Young's modulus is 8 MPa.

.支持基材3:聚氯乙烯膜(軟質),C+型(阿基里斯(Achilles)製造) . Support substrate 3: polyvinyl chloride film (soft), C+ type (manufactured by Achilles)

膜厚為50μm、斷裂伸長率為350%、楊氏模數為250MPa The film thickness is 50 μm, the elongation at break is 350%, and the Young's modulus is 250 MPa.

.支持基材4:帶有黏著劑的聚氯乙烯膜,T-80MW(電氣化學工業製造) . Support substrate 4: Polyvinyl chloride film with adhesive, T-80MW (manufactured by Electrical and Chemical Industry)

膜厚為50μm、斷裂伸長率為300%、楊氏模數為300MPa The film thickness is 50 μm, the elongation at break is 300%, and the Young's modulus is 300 MPa.

.支持基材5:矽酮膜,矽樹(三菱樹脂製造) . Support substrate 5: anthrone film, eucalyptus (manufactured by Mitsubishi Resin)

膜厚為50μm、斷裂伸長率為450%、楊氏模數為1.6MPa The film thickness is 50 μm, the elongation at break is 450%, and the Young's modulus is 1.6 MPa.

.支持基材6:乙烯-四氟乙烯共聚物(ethylene-tetrafluoroethylene,ETFE)膜,耐氟龍(Neoflon)EF-0050(大金(Daikin)製造) . Supporting substrate 6: ethylene-tetrafluoroethylene (ETFE) film, resistant to fluorocarbon (Neoflon) EF-0050 (manufactured by Daikin)

膜厚為50μm、斷裂伸長率為450%、楊氏模數為640MPa。 The film thickness was 50 μm, the elongation at break was 450%, and the Young's modulus was 640 MPa.

[製造例1] [Manufacturing Example 1]

於形成於「賽拉皮爾(Cerapeel)」WDS上的螢光體片材1上載置支持基材1,使用輥型熱層壓機,以溫度80℃、加壓壓力0.3MPa、進給速度0.5m/min進行按壓。放置冷卻而達到室溫後,將「賽拉皮爾(Cerapeel)」WDS剝離而獲得積層體1。 The support substrate 1 was placed on the phosphor sheet 1 formed on the "Cerapeel" WDS, and a roll type thermal laminator was used at a temperature of 80 ° C, a pressurization pressure of 0.3 MPa, and a feed rate of 0.5. m/min is pressed. After leaving to cool to room temperature, the "Cerapeel" WDS was peeled off to obtain a laminate 1.

[製造例2] [Manufacturing Example 2]

除了使用螢光體片材2來代替螢光體片材1以外,以與製造例1相同的方式獲得積層體2。 The laminate 2 was obtained in the same manner as in Production Example 1 except that the phosphor sheet 2 was used instead of the phosphor sheet 1.

[製造例3] [Manufacturing Example 3]

除了使用支持基材2來代替支持基材1以外,以與製造例1相同的方式獲得積層體3。 The laminate 3 was obtained in the same manner as in Production Example 1 except that the support substrate 2 was used instead of the support substrate 1.

[製造例4] [Manufacturing Example 4]

除了使用支持基材3來代替支持基材1以外,以與製造例1相同的方式獲得積層體4。 The laminate 4 was obtained in the same manner as in Production Example 1 except that the support substrate 3 was used instead of the support substrate 1.

[製造例5] [Manufacturing Example 5]

於形成於「賽拉皮爾(Cerapeel)」WDS上的螢光體片材1上,以黏著劑層與螢光體層接觸的方式載置支持基材4,使用輥型層壓機,以溫度25℃、加壓壓力0.3MPa、進給速度1.0m/min進行按壓。放置冷卻而達到室溫後,將「賽拉皮爾(Cerapeel)」WDS剝離而獲得積層體5。 On the phosphor sheet 1 formed on the "Cerapeel" WDS, the support substrate 4 is placed in contact with the phosphor layer with the adhesive layer, and a roll laminator is used at a temperature of 25 Pressed at °C, a pressurizing pressure of 0.3 MPa, and a feed rate of 1.0 m/min. After leaving to cool to room temperature, the "Cerapeel" WDS was peeled off to obtain a layered body 5.

[製造例6] [Manufacturing Example 6]

於形成於「賽拉皮爾(Cerapeel)」WDS上的螢光體片材1上載置支持基材5,使用輥型熱層壓機,以溫度80℃、加壓壓力0.3 MPa、進給速度0.5m/min進行按壓。放置冷卻而達到室溫後,將「賽拉皮爾(Cerapeel)」WDS剝離而獲得積層體6。 The support substrate 5 was placed on the phosphor sheet 1 formed on the "Cerapeel" WDS, and a roll type heat laminator was used at a temperature of 80 ° C and a press pressure of 0.3. The pressure was MPa and the feed rate was 0.5 m/min. After leaving to cool to room temperature, the "Cerapeel" WDS was peeled off to obtain a layered body 6.

[製造例7] [Manufacturing Example 7]

除了使用支持基材6來代替支持基材1以外,以與製造例1相同的方式獲得積層體67。 The laminate 67 was obtained in the same manner as in Production Example 1 except that the support substrate 6 was used instead of the support substrate 1.

此外,將螢光體片材的製造例1中製作的「賽拉皮爾(Cerapeel)」WDS與螢光體片材1的積層體作為積層體8。 In addition, a laminate of "Cerapeel" WDS and the phosphor sheet 1 produced in Production Example 1 of the phosphor sheet is used as the laminate 8.

<發光元件> <Light-emitting element> (貼附裝置) (attachment device)

使用如圖3a~圖3f所記載的真空層壓機V130(日合莫頓(Nichigo Morton)製造)來進行,所述真空層壓機V130具有包括真空腔室、與加熱器連接的下部壓板、上部壓板以及可撓性的氟矽酮橡膠片的壓緊機構。 This is carried out using a vacuum laminator V130 (manufactured by Nichigo Morton) as shown in Figs. 3a to 3f, which has a vacuum chamber, a lower platen connected to the heater, The upper platen and the pressing mechanism of the flexible fluoroketone rubber sheet.

(發光裝置的光的觀看方式評價) (Evaluation of the way the light of the light-emitting device is viewed)

將相對於發光裝置的LED晶片上表面而在垂直方向上離開10cm的距離中的色溫度(以下為垂直色溫度)、與在傾斜45°上方離開10cm的距離中的色溫度(以下為45°色溫度)的差的絕對值進行歸納,以如下方式進行判定。 The color temperature (hereinafter, the vertical color temperature) in a distance of 10 cm in the vertical direction with respect to the upper surface of the LED wafer of the light-emitting device, and the color temperature in the distance of 10 cm above the inclined 45° (hereinafter, 45°) The absolute value of the difference in color temperature is summarized and judged as follows.

A:|(垂直色溫度)-(45°色溫度)|<500K A:|(vertical color temperature)-(45° color temperature)|<500K

B:500K≦|(垂直色溫度)-(45°色溫度)|<1000K B: 500K ≦ | (vertical color temperature) - (45 ° color temperature) | <1000K

C:1000K≦|(垂直色溫度)-(45°色溫度)|。 C: 1000K ≦ | (vertical color temperature) - (45 ° color temperature) |

(追隨性評價方法) (follow-up evaluation method)

對於LED晶片接合於基板上、且由螢光體片材所被覆的發光裝置,於圖4所示的I、II、III的位置分別以與基板垂直的方式切斷剖面後,利用SEM來拍攝剖面圖。繼而根據各自的剖面圖來計算出相對於LED晶片的上部發光面而言,螢光體片材所接觸的部分的比例。此外,圖4中,A/D=1/10,B/D=5/10,C/D=9/10。 The light-emitting device in which the LED wafer is bonded to the substrate and covered with the phosphor sheet is cut at a position perpendicular to the substrate at positions I, II, and III shown in FIG. 4, and then photographed by SEM. Sectional view. The ratio of the portion of the phosphor sheet that is in contact with the upper light-emitting surface of the LED wafer is then calculated from the respective cross-sectional views. Further, in Fig. 4, A/D = 1/10, B/D = 5/10, and C/D = 9/10.

另外,同樣地計算出相對於LED晶片的側部發光面而言,螢光體片材所接觸的部分的比例。對於各比例,將3個部位的測定結果的平均值作為對於上部發光面的追隨性以及對於側部發光面的追隨性,藉由以下基準來評價追隨性。 Further, the ratio of the portion where the phosphor sheet is in contact with respect to the side light-emitting surface of the LED wafer is similarly calculated. For each ratio, the average value of the measurement results of the three parts was used as the followability to the upper light-emitting surface and the followability to the side light-emitting surface, and the followability was evaluated by the following criteria.

A:LED上部發光面的追隨性為100%且側部發光面的追隨性為90%以上 A: The followability of the upper light-emitting surface of the LED is 100%, and the followability of the side light-emitting surface is 90% or more.

B:LED上部發光面的追隨性為100%且側部發光面的追隨性為70%以上且小於90% B: The followability of the upper light-emitting surface of the LED is 100%, and the followability of the side light-emitting surface is 70% or more and less than 90%.

C:LED上部發光面的追隨性為100%且側部發光面的追隨性為50%以上且小於70% C: the followability of the upper light-emitting surface of the LED is 100% and the followability of the side light-emitting surface is 50% or more and less than 70%.

D:LED上部發光面的追隨性為90%以上且小於100%、或者側部發光面的追隨性為40%以上且小於50% D: the followability of the upper light-emitting surface of the LED is 90% or more and less than 100%, or the followability of the side light-emitting surface is 40% or more and less than 50%.

E:LED上部發光面的追隨性為小於90%、或者側部發光面的追隨性為小於40%。 E: The followability of the upper light-emitting surface of the LED is less than 90%, or the followability of the side light-emitting surface is less than 40%.

(膜厚均勻性評價) (Evaluation of film thickness uniformity)

根據所述的追隨性評價方法中利用SEM獲得的剖面圖,測量出LED晶片14與螢光體片材3在LED晶片14的上表面接觸的部 分中的自LED晶片14的上表面至螢光體片材3的外表面為止的距離a(參照圖4)。另外,同樣地,測量出LED晶片14與螢光體片材3在LED晶片14的側面接觸的部分中的自LED晶片14的側面至螢光體片材3的外表面為止的距離b(參照圖4)。測量距離a以及距離b時,測量為有效數字3位。將小數點後第三位四捨五入來求出a/b的值,藉由以下基準來評價膜厚均勻性。 According to the cross-sectional view obtained by SEM in the follow-up evaluation method, the portion where the LED wafer 14 and the phosphor sheet 3 are in contact with the upper surface of the LED wafer 14 is measured. The distance a from the upper surface of the LED wafer 14 to the outer surface of the phosphor sheet 3 (see FIG. 4). Further, similarly, the distance b from the side surface of the LED chip 14 to the outer surface of the phosphor sheet 3 in the portion where the LED wafer 14 and the phosphor sheet 3 are in contact with the side surface of the LED wafer 14 is measured (refer to Figure 4). When measuring the distance a and the distance b, the measurement is 3 digits of the effective digit. The third digit after the decimal point was rounded off to find the value of a/b, and the film thickness uniformity was evaluated by the following criteria.

A:1.00<a/b<1.05 A: 1.00 < a / b < 1.05

B:1.05≦a/b<1.20 B: 1.05≦a/b<1.20

C:0.80<a/b≦1.00或者1.20≦a/b<1.50 C: 0.80 < a / b ≦ 1.00 or 1.20 ≦ a / b < 1.50

D:a/b≦0.80或者1.50≦a/b、或者無法評價的情況。 D: a / b ≦ 0.80 or 1.50 ≦ a / b, or can not be evaluated.

[實施例1] [Example 1]

於設置有電極的氧化鋁製陶瓷基板上,經由厚度為10μm的金凸塊而接合尺寸為1mm見方、厚度為150μm的LED晶片。繼而,將積層體1切斷為3mm見方,以其螢光體片材面與所接合的LED晶片的上表面接觸的方式進行重疊。將其設置在位於真空層壓機的真空腔室內的下部壓板上。繼而,將下部壓板加熱至80℃後,將真空腔室密閉。利用真空泵將真空腔室內減壓至0.001MPa為止後,維持30秒。然後,向壓緊機構中送入0.1MPa的空氣,使氟矽酮橡膠片膨脹,以沿著LED晶片的形狀的方式將積層體1按壓10秒。接著,打開真空腔室(即注入真空腔室空氣而設為大氣壓(0.1MPa)),取出螢光體片材經被覆的發光裝置。其中,該階段中,經被覆的螢光體片材仍然為B階段(半硬化的狀態)。 On an alumina ceramic substrate provided with an electrode, an LED wafer having a size of 1 mm square and a thickness of 150 μm was bonded via a gold bump having a thickness of 10 μm. Then, the laminated body 1 was cut into 3 mm squares, and the phosphor sheet surface was overlapped with the upper surface of the bonded LED wafer. It was placed on a lower platen located in the vacuum chamber of the vacuum laminator. Then, after heating the lower platen to 80 ° C, the vacuum chamber was sealed. After the vacuum chamber was depressurized to 0.001 MPa by a vacuum pump, it was maintained for 30 seconds. Then, 0.1 MPa of air was fed into the pressing mechanism to expand the fluoroketone rubber sheet, and the laminated body 1 was pressed for 10 seconds along the shape of the LED wafer. Next, the vacuum chamber was opened (that is, air was injected into the vacuum chamber to be at atmospheric pressure (0.1 MPa)), and the phosphor sheet coated with the phosphor sheet was taken out. Among them, in this stage, the coated phosphor sheet is still in the B stage (semi-hardened state).

自該發光裝置中去除支持基材後,於加熱至150℃的恆 溫烘箱內加熱2小時而使螢光體片材充分硬化,獲得最終的發光裝置。藉由對所得的發光裝置接通30mA的電流而使發光裝置發光,測定自LED晶片發光面起在垂直方向(垂線方向)上離開10cm的位置的垂直色溫度、與自LED晶片發光面起向與該垂線所成的角度為45°的方向(傾斜45°方向)上離開10cm的位置的45°色溫度,藉此進行光的觀看方式評價。繼而,將已進行光的觀看方式評價的發光元件,以與基板垂直的方式切斷剖面後,利用SEM來拍攝剖面圖。根據該剖面圖來進行追隨性及膜厚均勻性的評價。 After the support substrate is removed from the light-emitting device, it is heated to a constant temperature of 150 ° C The phosphor sheet was sufficiently hardened by heating in a temperature oven for 2 hours to obtain a final light-emitting device. The light-emitting device was caused to emit light by applying a current of 30 mA to the obtained light-emitting device, and the vertical color temperature at a position separated from the light-emitting surface of the LED chip by 10 cm in the vertical direction (vertical direction) and the light-emitting surface from the LED chip were measured. The angle formed by the perpendicular line in the direction of 45° (in the direction of 45° inclination) was separated from the 45° color temperature at a position of 10 cm, thereby evaluating the light viewing mode. Then, the light-emitting element in which the light-viewing mode was evaluated was cut into a cross section perpendicular to the substrate, and then a cross-sectional view was taken by SEM. The followability and film thickness uniformity were evaluated based on the cross-sectional view.

[實施例2~實施例6] [Example 2 to Example 6]

除了使用表1中記載的積層體以外,以與實施例1相同的方式獲得發光裝置。對所得的發光裝置,以與實施例1相同的方式進行光的觀看方式、追隨性以及膜厚均勻性的評價。 A light-emitting device was obtained in the same manner as in Example 1 except that the laminate described in Table 1 was used. With respect to the obtained light-emitting device, the light viewing mode, the followability, and the film thickness uniformity were evaluated in the same manner as in the first embodiment.

[比較例1~比較例2] [Comparative Example 1 to Comparative Example 2]

除了使用表1中記載的積層體以外,以與實施例1相同的方式獲得發光裝置。對於所得的發光裝置,以與實施例1相同的方式進行光的觀看方式、追隨性以及膜厚均勻性的評價。 A light-emitting device was obtained in the same manner as in Example 1 except that the laminate described in Table 1 was used. With respect to the obtained light-emitting device, the light viewing mode, the followability, and the film thickness uniformity were evaluated in the same manner as in the first embodiment.

根據實施例的結果可知,藉由使用包括於23℃下斷裂伸長率為200%以上、楊氏模數為600MPa以下的支持基材及螢光體片材的積層體,不僅可於LED晶片上保持追隨性及膜厚均勻性,而且可由螢光體片材被覆。 According to the results of the examples, it is understood that the laminate including the support substrate and the phosphor sheet having a elongation at break of 200% or more and a Young's modulus of 600 MPa or less at 23 ° C can be used not only on the LED wafer. The followability and film thickness uniformity are maintained and can be covered by the phosphor sheet.

另外,使該些發光裝置發光時,實施例的發光元件從任一方向皆均勻地發出光,但比較例的發光元件若從傾斜方向上觀察,則看到稍暗。可知由此產生方位不均。 Further, when the light-emitting devices were caused to emit light, the light-emitting elements of the examples uniformly emitted light from any direction, but the light-emitting elements of the comparative examples were slightly dark when viewed from the oblique direction. It can be seen that uneven orientation is caused thereby.

如上所述可知,使用本發明的積層體而可進行追隨性及膜厚均勻性優異的貼附的發光元件中,LED晶片的垂直上的色溫度與傾斜45°方向上的色溫度的差小,因此可抑制方位不均。 As described above, in the light-emitting element which is excellent in followability and film thickness uniformity, the difference between the vertical color temperature of the LED wafer and the color temperature in the direction of inclination 45° is small. Therefore, uneven orientation can be suppressed.

1‧‧‧積層體 1‧‧ ‧ laminated body

2‧‧‧支持基材 2‧‧‧Support substrate

3‧‧‧螢光體片材 3‧‧‧Fuel sheet

Claims (7)

一種積層體,其是包含支持基材、以及含有螢光體及樹脂的螢光體片材的積層體,並且藉由拉伸試驗而求出的所述支持基材的23℃下的斷裂伸長率為200%以上,且所述支持基材的23℃下的楊氏模數為600MPa以下。 A laminate comprising a support substrate and a phosphor sheet containing a phosphor and a resin, and an elongation at 23 ° C of the support substrate obtained by a tensile test The rate is 200% or more, and the Young's modulus at 23 ° C of the support substrate is 600 MPa or less. 如申請專利範圍第1項所述的積層體,其中所述支持基材的23℃下的楊氏模數為400MPa以下。 The laminate according to claim 1, wherein the support substrate has a Young's modulus at 23 ° C of 400 MPa or less. 如申請專利範圍第1項所述的積層體,其中所述支持基材的23℃下的楊氏模數為100MPa以下。 The laminate according to claim 1, wherein the support substrate has a Young's modulus at 23 ° C of 100 MPa or less. 如申請專利範圍第1項至第3項中任一項所述的積層體,其中所述支持基材為聚氯乙烯或者聚胺基甲酸酯。 The laminate according to any one of claims 1 to 3, wherein the support substrate is polyvinyl chloride or polyurethane. 一種發光裝置的製造方法,其包括如下步驟(被覆步驟):將接合於基板上的LED晶片的發光面以如申請專利範圍第1項至第4項中任一項所述的積層體的螢光體片材進行被覆。 A method of manufacturing a light-emitting device, comprising the step of coating a light-emitting surface of an LED chip bonded to a substrate, the phosphor of the laminate according to any one of claims 1 to 4 The light body sheet is coated. 一種發光裝置的製造方法,其包括如下步驟(被覆步驟):將接合於基板上的LED晶片的上表面及側面以如申請專利範圍第1項至第4項中任一項所述的積層體的螢光體片材進行被覆。 A method of manufacturing a light-emitting device, comprising the step of coating a layered body according to any one of claims 1 to 4, wherein the upper surface and the side surface of the LED chip bonded to the substrate are bonded The phosphor sheet is coated. 如申請專利範圍第5項或第6項所述的發光裝置的製造方法,其中所述LED晶片與所述螢光體片材在所述LED晶片的上表面接觸的部分中的自LED晶片上表面至螢光體片材外表面為止的距離a[μm]、和所述LED晶片與所述螢光體片材在所述LED晶片的側 面接觸的部分中的自LED晶片側面至螢光體片材外表面為止的距離b[μm]滿足如下關係:1.00<a/b<1.20。 The method of manufacturing a light-emitting device according to claim 5, wherein the LED chip is on the self-LED wafer in a portion of the phosphor sheet that is in contact with the upper surface of the LED wafer. a distance a [μm] from the surface to the outer surface of the phosphor sheet, and the LED wafer and the phosphor sheet on the side of the LED wafer The distance b [μm] from the side of the LED wafer to the outer surface of the phosphor sheet in the surface contact portion satisfies the following relationship: 1.00 < a / b < 1.20.
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