CN102260903A - 一种生长薄板硅晶体的方法 - Google Patents
一种生长薄板硅晶体的方法 Download PDFInfo
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- CN102260903A CN102260903A CN2011101931632A CN201110193163A CN102260903A CN 102260903 A CN102260903 A CN 102260903A CN 2011101931632 A CN2011101931632 A CN 2011101931632A CN 201110193163 A CN201110193163 A CN 201110193163A CN 102260903 A CN102260903 A CN 102260903A
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- silicon
- crystal
- thin plate
- liquid
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110193163 CN102260903B (zh) | 2011-07-11 | 2011-07-11 | 一种生长薄板硅晶体的方法 |
PCT/CN2012/070448 WO2013007108A1 (zh) | 2011-07-11 | 2012-01-17 | 一种生长薄板硅晶体的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110193163 CN102260903B (zh) | 2011-07-11 | 2011-07-11 | 一种生长薄板硅晶体的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102260903A true CN102260903A (zh) | 2011-11-30 |
CN102260903B CN102260903B (zh) | 2013-07-24 |
Family
ID=45007729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110193163 Expired - Fee Related CN102260903B (zh) | 2011-07-11 | 2011-07-11 | 一种生长薄板硅晶体的方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102260903B (zh) |
WO (1) | WO2013007108A1 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013007108A1 (zh) * | 2011-07-11 | 2013-01-17 | 浙江碧晶科技有限公司 | 一种生长薄板硅晶体的方法 |
CN104805500A (zh) * | 2015-04-09 | 2015-07-29 | 江苏盎华光伏工程技术研究中心有限公司 | 采用氧化层辅助的硅片制作设备及其控制方法 |
CN106350866A (zh) * | 2016-08-25 | 2017-01-25 | 常州大学 | 一种超薄黑硅硅片的制作设备及方法 |
CN106521623A (zh) * | 2016-12-29 | 2017-03-22 | 常州大学 | 硅片水平提拉成型设备热场结构 |
CN106521622A (zh) * | 2016-12-20 | 2017-03-22 | 常州大学 | 用于硅片水平提拉的加热装置 |
CN106676630A (zh) * | 2016-12-29 | 2017-05-17 | 常州大学 | 硅片提拉装置及其控制方法 |
CN107217296A (zh) * | 2017-04-28 | 2017-09-29 | 常州大学 | 一种硅片水平生长设备和方法 |
CN107513767A (zh) * | 2017-09-25 | 2017-12-26 | 常州大学 | 一种适用于多晶硅垂直生长机构的温度梯度产生装置及使用方法 |
CN109778307A (zh) * | 2019-02-15 | 2019-05-21 | 江苏大学 | 一种适用于单晶硅水平生长机构的过程控制系统 |
CN114667370A (zh) * | 2019-08-09 | 2022-06-24 | 尖端设备技术公司 | 生产具有低氧浓度区域的带或晶片 |
CN115253363A (zh) * | 2022-08-09 | 2022-11-01 | 上海交通大学 | 流动的区域结晶控制装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10415151B1 (en) * | 2014-03-27 | 2019-09-17 | Varian Semiconductor Equipment Associates, Inc | Apparatus for controlling heat flow within a silicon melt |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1577343A (en) * | 1978-02-21 | 1980-10-22 | Standard Telephones Cables Ltd | Preparing single crystal sheet semiconductor materials |
CN101133194A (zh) * | 2006-02-16 | 2008-02-27 | 靳永钢 | 浮法硅晶片的制作工艺和设备 |
WO2010056350A2 (en) * | 2008-11-14 | 2010-05-20 | Carnegie Mellon University | Methods for casting by a float process and associated appratuses |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4744809A (en) * | 1987-01-02 | 1988-05-17 | Ppg Industries, Inc. | Method and apparatus for homogenizing flat glass |
JP4570570B2 (ja) * | 2006-01-12 | 2010-10-27 | シャープ株式会社 | 薄板製造装置および薄板製造方法 |
CN101092742A (zh) * | 2007-04-20 | 2007-12-26 | 陆大荣 | 高效太阳能电池用微晶多晶硅片无切割制备方法 |
CN101328605A (zh) * | 2007-06-20 | 2008-12-24 | 济南荣达电子有限公司 | 浮法冶金熔融析出杂质提纯生产太阳能多晶带硅 |
CN102260903B (zh) * | 2011-07-11 | 2013-07-24 | 浙江碧晶科技有限公司 | 一种生长薄板硅晶体的方法 |
-
2011
- 2011-07-11 CN CN 201110193163 patent/CN102260903B/zh not_active Expired - Fee Related
-
2012
- 2012-01-17 WO PCT/CN2012/070448 patent/WO2013007108A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1577343A (en) * | 1978-02-21 | 1980-10-22 | Standard Telephones Cables Ltd | Preparing single crystal sheet semiconductor materials |
CN101133194A (zh) * | 2006-02-16 | 2008-02-27 | 靳永钢 | 浮法硅晶片的制作工艺和设备 |
WO2010056350A2 (en) * | 2008-11-14 | 2010-05-20 | Carnegie Mellon University | Methods for casting by a float process and associated appratuses |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013007108A1 (zh) * | 2011-07-11 | 2013-01-17 | 浙江碧晶科技有限公司 | 一种生长薄板硅晶体的方法 |
CN104805500B (zh) * | 2015-04-09 | 2017-04-19 | 江苏盎华光伏工程技术研究中心有限公司 | 采用氧化层辅助的硅片制作设备及其控制方法 |
CN104805500A (zh) * | 2015-04-09 | 2015-07-29 | 江苏盎华光伏工程技术研究中心有限公司 | 采用氧化层辅助的硅片制作设备及其控制方法 |
CN106350866A (zh) * | 2016-08-25 | 2017-01-25 | 常州大学 | 一种超薄黑硅硅片的制作设备及方法 |
CN106521622A (zh) * | 2016-12-20 | 2017-03-22 | 常州大学 | 用于硅片水平提拉的加热装置 |
CN106676630A (zh) * | 2016-12-29 | 2017-05-17 | 常州大学 | 硅片提拉装置及其控制方法 |
CN106521623A (zh) * | 2016-12-29 | 2017-03-22 | 常州大学 | 硅片水平提拉成型设备热场结构 |
CN107217296A (zh) * | 2017-04-28 | 2017-09-29 | 常州大学 | 一种硅片水平生长设备和方法 |
CN107513767A (zh) * | 2017-09-25 | 2017-12-26 | 常州大学 | 一种适用于多晶硅垂直生长机构的温度梯度产生装置及使用方法 |
CN107513767B (zh) * | 2017-09-25 | 2020-02-07 | 常州大学 | 一种适用于多晶硅垂直生长机构的温度梯度产生装置及使用方法 |
CN109778307A (zh) * | 2019-02-15 | 2019-05-21 | 江苏大学 | 一种适用于单晶硅水平生长机构的过程控制系统 |
CN114667370A (zh) * | 2019-08-09 | 2022-06-24 | 尖端设备技术公司 | 生产具有低氧浓度区域的带或晶片 |
CN115253363A (zh) * | 2022-08-09 | 2022-11-01 | 上海交通大学 | 流动的区域结晶控制装置 |
CN115253363B (zh) * | 2022-08-09 | 2024-02-27 | 上海交通大学 | 流动的区域结晶控制装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102260903B (zh) | 2013-07-24 |
WO2013007108A1 (zh) | 2013-01-17 |
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C14 | Grant of patent or utility model | ||
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Owner name: ZHEJIANG LONGBAI PHOTOVOLTAIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHEJIANG BIJING SCIENCE AND TECHNOLOGY CO., LTD. Effective date: 20150820 |
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Effective date of registration: 20150820 Address after: 312300 No. 15 East Mountain Road, Shangyu Economic Development Zone, Shaoxing, Zhejiang Patentee after: Zhejiang Longbai PV Co., Ltd. Address before: 312300 No. 567 Renmin West Road, Shaoxing, Zhejiang, Shangyu Patentee before: Zhejiang Bijing Science and Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20130724 Termination date: 20170711 |