CN102254970B - 太阳能电池模块 - Google Patents
太阳能电池模块 Download PDFInfo
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- CN102254970B CN102254970B CN201010565334.5A CN201010565334A CN102254970B CN 102254970 B CN102254970 B CN 102254970B CN 201010565334 A CN201010565334 A CN 201010565334A CN 102254970 B CN102254970 B CN 102254970B
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- 230000005611 electricity Effects 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 239000007769 metal material Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000005341 toughened glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/291—Applications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/291—Applications
- Y10S136/293—Circuits
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100045876A KR100990116B1 (ko) | 2010-05-17 | 2010-05-17 | 태양전지 모듈 |
KR10-2010-0045876 | 2010-05-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102254970A CN102254970A (zh) | 2011-11-23 |
CN102254970B true CN102254970B (zh) | 2014-09-03 |
Family
ID=43135873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010565334.5A Active CN102254970B (zh) | 2010-05-17 | 2010-11-26 | 太阳能电池模块 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8586855B2 (zh) |
EP (3) | EP3503207B1 (zh) |
KR (1) | KR100990116B1 (zh) |
CN (1) | CN102254970B (zh) |
DE (1) | DE202010018465U1 (zh) |
Families Citing this family (29)
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KR20120011040A (ko) | 2009-05-13 | 2012-02-06 | 사빅 이노베이티브 플라스틱스 아이피 비.브이. | 패널 연결용 커넥터 조립체 |
KR101796045B1 (ko) | 2011-04-12 | 2017-11-10 | 엘지전자 주식회사 | 태양광 모듈 |
CN202111117U (zh) * | 2011-05-05 | 2012-01-11 | 泰科电子(上海)有限公司 | 太阳能电池板接线模块 |
JP2014519195A (ja) * | 2011-05-19 | 2014-08-07 | サン−ゴバン グラス フランス | 太陽電池モジュール |
EP2763188A4 (en) * | 2011-09-29 | 2015-05-27 | Sanyo Electric Co | SOLAR CELL MODULE |
CN102522442B (zh) * | 2011-12-31 | 2014-08-27 | 常州亿晶光电科技有限公司 | 一种八列太阳能组件内部线路的绝缘阻隔结构 |
KR20130078916A (ko) * | 2012-01-02 | 2013-07-10 | 엘지전자 주식회사 | 양면 수광형 태양전지 모듈 |
CN103247705A (zh) * | 2012-02-14 | 2013-08-14 | 杜邦太阳能有限公司 | 太阳能板 |
US9074372B2 (en) * | 2012-04-26 | 2015-07-07 | Sabic Global Technologies B.V. | Connector assemblies for connecting panels |
US9312411B2 (en) | 2012-04-26 | 2016-04-12 | Sabic Global Technologies B.V. | Connector assemblies for connecting panels, panels with connector assemblies |
CN102664214A (zh) * | 2012-05-10 | 2012-09-12 | 英利能源(中国)有限公司 | 一种太阳能光伏组件及其汇流带引出线制作方法 |
EP2925940B1 (en) * | 2012-12-03 | 2017-06-28 | Kingspan Holdings (IRL) Limited | A composite insulating panel |
US8722450B1 (en) * | 2013-03-18 | 2014-05-13 | Perfect Source Technology Corp. | Method for manufacturing improved solar cell module |
NL2012553B1 (en) | 2014-04-02 | 2016-02-15 | Stichting Energieonderzoek Centrum Nederland | Back side contact layer for PV module with modified cell connection topology. |
KR102377270B1 (ko) * | 2014-07-09 | 2022-03-22 | 엔페이즈 에너지, 인코포레이티드 | 전력 전자 기기를 광기전 모듈에 연결하기 위한 장치 및 시스템 |
JP2016021467A (ja) * | 2014-07-14 | 2016-02-04 | 達昭 浦谷 | 太陽電池モジュール用配線構造、および太陽電池モジュール用配線構造の製造方法 |
JPWO2016021116A1 (ja) * | 2014-08-05 | 2017-06-01 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
EP3188255B1 (en) * | 2014-08-28 | 2018-10-10 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell module and production method therefor |
CN104506131B (zh) * | 2014-12-17 | 2017-09-29 | 浙江正泰太阳能科技有限公司 | 太阳能电池封装薄板及太阳能电池组件 |
GB201504696D0 (en) * | 2015-03-19 | 2015-05-06 | Cpi Innovation Services Ltd | Back substrate for an opto-electronic device module and a module of opto-electronic devices comprising said back substrate |
KR101806972B1 (ko) * | 2016-07-21 | 2018-01-18 | 엘지전자 주식회사 | 태양 전지 모듈 |
JP2018107185A (ja) * | 2016-12-22 | 2018-07-05 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
EP3358630B1 (en) * | 2017-02-06 | 2020-04-15 | IMEC vzw | Partially translucent photovoltaic modules and methods for manufacturing |
KR101879374B1 (ko) | 2017-02-22 | 2018-08-17 | 주식회사 탑선 | 태양전지모듈 |
US11463039B2 (en) * | 2017-09-29 | 2022-10-04 | Zeon Corporation | Energy harvester |
US10490682B2 (en) | 2018-03-14 | 2019-11-26 | National Mechanical Group Corp. | Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials |
KR20190116922A (ko) * | 2018-04-05 | 2019-10-15 | 선파워 코포레이션 | 절연 인터커넥터를 갖춘 태양광 장치 |
EP3573110A1 (de) * | 2018-05-25 | 2019-11-27 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Solarmodul mit vergrösserter aperturfläche |
KR102001230B1 (ko) | 2018-06-28 | 2019-07-17 | 주식회사 탑선 | 태양전지모듈 |
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CN1202561A (zh) * | 1997-06-11 | 1998-12-23 | 佳能株式会社 | 太阳能屋顶构件 |
EP1928027A2 (en) * | 2006-11-29 | 2008-06-04 | Sanyo Electric Co., Ltd. | Solar cell module |
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US4040867A (en) * | 1976-08-24 | 1977-08-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cell shingle |
US4321416A (en) * | 1980-12-15 | 1982-03-23 | Amp Incorporated | Photovoltaic power generation |
DE29619119U1 (de) * | 1996-09-23 | 1998-01-22 | Atlantis Solar Systeme AG, Bern | Photovoltaisches Solardach |
JPH11150287A (ja) * | 1997-09-10 | 1999-06-02 | Canon Inc | 太陽電池モジュール、太陽電池付き外囲体、太陽電池付き外囲体の設置方法、及び太陽光発電システム |
JP3022508B1 (ja) | 1998-09-24 | 2000-03-21 | 三洋電機株式会社 | 太陽電池モジュール |
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JP3605032B2 (ja) * | 2000-06-07 | 2004-12-22 | 三洋電機株式会社 | 太陽電池モジュール,太陽電池モジュールの接続方法,太陽電池モジュールの設置方法及び太陽電池モジュールのアース接続方法 |
US7578102B2 (en) * | 2002-08-16 | 2009-08-25 | Mark Banister | Electric tile modules |
JP2004140024A (ja) | 2002-10-15 | 2004-05-13 | Sharp Corp | 太陽電池セル、それを用いた太陽電池モジュールおよびその製造方法 |
JP4141974B2 (ja) * | 2004-03-08 | 2008-08-27 | シャープ株式会社 | 瓦一体型太陽電池モジュールおよび端子ボックス |
US8415553B2 (en) | 2004-08-11 | 2013-04-09 | Dyesol, Ltd. | Photoelectrochemical photovoltaic panel and method to manufacture thereof |
TW200642103A (en) | 2005-03-31 | 2006-12-01 | Sanyo Electric Co | Solar battery module |
GB2432724A (en) * | 2005-11-25 | 2007-05-30 | Rainer Sedelmayer | Roof anchor for collector elements |
CH696344A5 (fr) | 2006-02-22 | 2007-04-30 | Ses Soc En Solaire Sa | Film support et procédé de couplage de cellules photovoltaïques. |
US9184327B2 (en) * | 2006-10-03 | 2015-11-10 | Sunpower Corporation | Formed photovoltaic module busbars |
JP2008205137A (ja) | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
WO2009061963A2 (en) * | 2007-11-06 | 2009-05-14 | Krause Richard H | Photovoltaic roofing systems and methods for installing them |
-
2010
- 2010-05-17 KR KR1020100045876A patent/KR100990116B1/ko active IP Right Grant
- 2010-11-02 US US12/917,815 patent/US8586855B2/en active Active
- 2010-11-16 EP EP19155708.1A patent/EP3503207B1/en active Active
- 2010-11-16 EP EP10014676.0A patent/EP2388827B1/en active Active
- 2010-11-16 DE DE202010018465.7U patent/DE202010018465U1/de not_active Expired - Lifetime
- 2010-11-16 EP EP17201313.8A patent/EP3300124B1/en active Active
- 2010-11-26 CN CN201010565334.5A patent/CN102254970B/zh active Active
-
2013
- 2013-11-18 US US14/082,486 patent/US8835744B2/en active Active
Patent Citations (2)
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Also Published As
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EP2388827A3 (en) | 2014-03-12 |
EP3503207B1 (en) | 2020-10-14 |
DE202010018465U1 (de) | 2016-11-29 |
EP2388827A2 (en) | 2011-11-23 |
US8835744B2 (en) | 2014-09-16 |
US20140076375A1 (en) | 2014-03-20 |
EP3503207A1 (en) | 2019-06-26 |
KR100990116B1 (ko) | 2010-10-29 |
US8586855B2 (en) | 2013-11-19 |
EP2388827B1 (en) | 2018-01-03 |
US20110220168A1 (en) | 2011-09-15 |
EP3300124A1 (en) | 2018-03-28 |
EP3300124B1 (en) | 2019-03-27 |
CN102254970A (zh) | 2011-11-23 |
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