CN102252219B - 一种led路灯和大功率led器件 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 230000005496 eutectics Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 62
- 238000007747 plating Methods 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
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- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
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- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract
本发明公开了一种LED路灯、大功率LED器件及一种大功率LED,LED路灯包括基板以及至少一个LED芯片,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。本发明能够有效降低芯片结温,增强LED路灯的散热效果,延长其工作寿命。
Description
技术领域
本发明涉及照明领域,尤其涉及一种LED(发光二极管)路灯和一种大功率LED器件。
背景技术
LED路灯一般都采用锡焊工艺,将大功率LED固定在散热性能较好的铝基板上,并将具有特定形状的灯罩固定在大功率LED上方。
目前,用于LED路灯的大多数LED采用陶瓷基板,LTCC及HTCC(Al2O3)的导热系数(TC)一般在3w/m.k~18w/m.k,线性膨胀系数(CTE)在4.5ppm/~7ppm/k,通常使用于功率低于3W的LED,例如,OSRAM公司生产的以厚膜或低温共烧陶瓷基板作为晶粒散热基板的一种LED,热阻的最小值为6.5℃/W左右。然而,对于使用在LED路灯上的更大功率的LED,陶瓷基板的热阻较大,导热效果不佳,使LED在长期点亮过程中,芯片结温高,散热困难。而且这种LED路灯在使用过程中,LED芯片通电产生的大量热能首先传导至LED支架,再经过焊接处传导至铝基板进行散热,因此导热途径比较复杂,对LED路灯的散热性能造成一定影响,可能导致LED路灯光效降低,工作寿命缩短。
发明内容
本发明要解决的主要技术问题是,提供一种提高散热性能的LED路灯、大功率LED器件和一种大功率LED。
为解决上述技术问题,本发明提供一种LED路灯,包括基板以及至少一个LED芯片,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。
优选地,所述硅基板和LED芯片的上方还覆盖透明胶层;所述LED路灯还包括与所述透明硅胶层的上表面的形状匹配的透光灯罩。
进一步地,所述透明硅胶的上表面呈凸起的球面。
所述金属互联层包括依次镀覆在所述硅基板上表面的镍层和银层,或者包括依次镀覆在所述硅基板上表面的铜层和银层。
进一步地,所述金属互联层包括分别引出LED芯片的正、负电极的两部分,所述两部分金属互联层之间采用绝缘的隔离层隔开。
优选地,所述隔离层为填充在所述两部分金属互联层之间的不变黄白胶层。
所述LED芯片的上表面覆盖荧光粉薄层。
所述硅基板上具有贯通其上下表面的银通孔,所述硅基板的下表面还设置与所述银通孔的位置对应的热沉。
本发明还保护了一种大功率LED器件,与以上所述LED路灯的结构相同或相似,例如包括基板以及至少一个LED芯片,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。当然还可包括透光灯罩、荧光粉薄层等结构。
本发明还保护了一种大功率LED,与以上所述LED路灯的结构相同或相似,例如包括基板和至少一个LED芯片,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。当然还可包括荧光粉薄层、透明胶层等结构。
本发明的有益效果是:通过采用导热性好的硅基板,使LED路灯的散热性能大幅提高,同时本发明还在金属互联层上镀覆纳米银膜,利用共晶焊的方式将LED芯片固定在硅基板的表面,大幅度地降低了结温,能够有效延长LED路灯的工作寿命。
覆盖在LED芯片和基板上的透明胶层的上表面呈凸起的球面,正好与透光灯罩的形状匹配,不仅散热效果好,而且便于安装。
由于两部分金属互联层之间填充不变黄白胶层,进一步增强了光反射效果,提高了光效。
附图说明
图1为本发明第一实施例的LED路灯剖视图;
图2为本发明第二种实施例的LED路灯剖视图;
图3为本发明第三种实施例的LED路灯剖视图。
具体实施方式
下面通过具体实施方式结合附图对本发明作进一步详细说明。
请参考图1,本实施方式的LED路灯包括基板1、透光灯罩100以及至少一个LED芯片3。其中,基板1的材料采用硅,其上表面镀覆金属互联层,金属互联层的上表面还镀覆纳米银膜,多个LED芯片3通过共晶焊的方式固定在镀覆纳米银膜的金属互联层上,且通过两根金线5与金属互联层相连。金属互联层利用贯通基板1上下表面、且灌有金属银的连接孔(银通孔)11,引出LED芯片3的电极至设置在基板1下方的电极引脚4。
由于本实施方式采用硅基板,经研究,硅的导热系数(TC)在163w/m.k左右,线性膨胀系数(CTE)在4.2ppm/k左右,接近LED蓝光芯片的膨胀系数,且外观呈黑色,黑度接近1,具有高导热、高辐射、高可靠性等特点。由于导热系数接近AlN,大于SiC,加上黑体辐射功能,在消耗同等功率的情况下,硅的导热能力远远大于LTCC及HTCC(Al2O3)等陶瓷材料,据测量,采用硅基板后,LED的散热性能大幅提高,热阻低于3℃/W,与陶瓷基板相比LED的外形尺寸可缩小60%~70%,尤其适合于功率大于1W的LED,能够明显降低结温,从而减少LED路灯的光衰,延长其工作寿命,使LED路灯的寿命达5万小时以上。
另外,硅在地球上的含量位居第二,占地壳成分的25%左右,因此资源丰富,能够减小LED以及LED路灯等器件的材料成本。
本实施方式的LED路灯在金属互联层的上表面镀覆纳米银膜,一方面,纳米银膜能够显著增强光反射效果,提高出光效率;另一方面,与陶瓷基板粗糙的表面相比,镀覆纳米银膜后金属互联层的表面非常光滑,便于将LED芯片3通过共晶焊的方式固定在基板1上,实现COB(CHIP ON BOARD:板上芯片封装),与现有技术中锡焊的技术相比,采用共晶焊的固晶工艺能够有效降低热阻,简化或缩短导热途径,将LED芯片3产生的热量迅速传导至基板1的下表面,进一步加强LED路灯的散热效果。另外,纳米银膜具有很好的抗氧化、抗硫化、抗水汽等功能,与镀金的方式相比,本实施方式还能降低材料成本。
LED芯片3的数量可根据具体需要而定,与陶瓷材料制作的基板1相比,采用硅制作的基板1导热性能大幅提高,因此,同等的散热面积能够承载更多的LED芯片3。本实施方式的LED路灯中,多个LED芯片3相互串联或者并联,一方面,能够有效提高大功率LED的亮度,另一方面,能够简化驱动电路,降低成本。
金属互联层可以根据具体需要设置,例如包括依次镀覆在基板1上表面的镍层21和银层22,或者也可包括依次镀覆在基板1上表面的铜层和银层22。银层22用于增强光反射,镍层21或铜层用于隔离黑色的基板1,避免吸光。
金属互联层包括分别引出LED芯片3的正、负电极的两部分,两部分金属互联层之间采用绝缘的隔离层隔开。隔离层可采用透明胶层或白色胶层,优选地,为了避免该位置的黑色基板1吸光,隔离层采用填充在两部分金属互联层之间、耐高温300度以上的不黄变白胶层9,具有较强的反光作用,能够进一步增强LED路灯的亮度。
LED芯片3的上表面还覆盖混合荧光粉的荧光粉薄层8,能够在LED芯片3的激发下合成白光,使白光LED路灯具有较强的显色性。
透光灯罩100采用玻璃或树脂等材料制作,一般用于保护LED路灯中的LED芯片3及其它器件,透光灯罩100的颜色、大小、形状可根据具体需求灵活设置。一种实施方式中,基板1和LED芯片3上方还覆盖透明胶层7,透光灯罩100的形状与该透明胶层7的上表面的形状匹配。例如,大多数LED路灯的透光灯罩100为凸起的球面,如图1所示的实施方式中,透明胶层7的上表面也为凸起的球面,且与透光灯罩100的形状匹配,该球面利用注液或者压膜工艺成型,能够充分利用球面的聚光效果,进一步提高LED路灯的发光效率和亮度。如图2所示,透明胶层7的上表面也可设计成平面或者其他形状,为了进一步提高出光效率,透明胶层7的上表面还可设置多个凸起的球面,每个球面的位置与发光芯片3的位置对应。
优选地,基板1上设置贯通其上下表面的多个银通孔,这些银通孔内可灌装银浆或其他热性能较好的金属,用于将LED芯片3发光产生的热量传导至基板1下表面的热沉6,热沉6采用铜等金属制作,铜的外层电镀了一层银,热沉6与银通孔的位置相对应,能够迅速将热量散发,进一步提高LED路灯的散热效果。热沉6还可作为焊盘,便于将基体1焊接固定在电路板或其他连接器件上。
如图3所示的实施方式中,还可将LED路灯的两个焊盘10设置在基板1的上表面或者两端,使其分布在透明胶层7的两侧。这种封装方式便于LED路灯的线路连接。
本发明还保护了一种大功率LED器件和LED,结构与以上所述的LED路灯类似,不仅散热性能好,而且能够显著降低产品成本,可广泛应用于各种照明或背光显示领域。
以上内容是结合具体的实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
Claims (9)
1.一种LED路灯,包括基板以及至少一个LED芯片,其特征在于,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层包括镀覆在所述硅基板上表面的镍层和镀覆在所述镍层上的银层;所述金属互联层包括的银层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。
2.如权利要求1所述的LED路灯,其特征在于,所述硅基板和LED芯片的上方还覆盖透明胶层;所述LED路灯还包括与所述透明胶层的上表面的形状匹配的透光灯罩。
3.如权利要求2所述的LED路灯,其特征在于,所述透明硅胶的上表面呈凸起的球面。
4.如权利要求1至3中任一项所述的LED路灯,其特征在于,所述金属互联层包括分别引出LED芯片的正、负电极的两部分,所述两部分金属互联层之间采用绝缘的隔离层隔开。
5.如权利要求4所述的LED路灯,其特征在于,所述隔离层为填充在所述两部分金属互联层之间的不变黄白胶层。
6.如权利要求1至3中任一项所述的LED路灯,其特征在于,所述LED芯片的上表面覆盖荧光粉薄层。
7.如权利要求1至3中任一项所述的LED路灯,其特征在于,所述硅基板上具有贯通其上下表面的银通孔,所述硅基板的下表面还设置与所述银通孔的位置对应的热沉。
8.一种大功率LED器件,包括基板以及至少一个LED芯片,其特征在于,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层包括镀覆在所述硅基板上表面的镍层和镀覆在所述镍层上的银层;所述金属互联层包括的银层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。
9.一种大功率LED,包括基板和至少一个LED芯片,其特征在于,所述基板为硅基板,所述硅基板的上表面镀覆用于引出所述LED芯片电极的金属互联层,所述金属互联层包括镀覆在所述硅基板上表面的镍层和镀覆在所述镍层上的银层;所述金属互联层包括的银层的上表面镀覆纳米银膜;所述LED芯片通过共晶焊的方式固定在所述镀覆纳米银膜的金属互联层上。
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CN102913798A (zh) * | 2012-11-05 | 2013-02-06 | 深圳市聚作照明股份有限公司 | 一种大角度发光的led灯管 |
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CN103824928B (zh) * | 2014-03-18 | 2017-06-20 | 熊文勇 | Led横向流体散热cob光源及其封装工艺 |
CN105321937A (zh) * | 2014-06-25 | 2016-02-10 | 常州欧密格光电科技有限公司 | 超小超薄高光效侧射型高亮白光多晶led元件 |
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CN1971952A (zh) * | 2006-11-15 | 2007-05-30 | 重庆邮电大学 | 大功率led芯片倒焊装方法 |
CN201057441Y (zh) * | 2007-07-13 | 2008-05-07 | 浙江金华满天星光电有限公司 | 一种led发光装置 |
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CN1971952A (zh) * | 2006-11-15 | 2007-05-30 | 重庆邮电大学 | 大功率led芯片倒焊装方法 |
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