CN102244020A - Package method and package die structure of composite material lead frame - Google Patents

Package method and package die structure of composite material lead frame Download PDF

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Publication number
CN102244020A
CN102244020A CN2011101654343A CN201110165434A CN102244020A CN 102244020 A CN102244020 A CN 102244020A CN 2011101654343 A CN2011101654343 A CN 2011101654343A CN 201110165434 A CN201110165434 A CN 201110165434A CN 102244020 A CN102244020 A CN 102244020A
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CN
China
Prior art keywords
lead frame
composite material
electromagnet
counterdie
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101654343A
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Chinese (zh)
Inventor
王新潮
谢洁人
吴昊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN2011101654343A priority Critical patent/CN102244020A/en
Publication of CN102244020A publication Critical patent/CN102244020A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The invention relates to a package method and a package die structure of a composite material lead frame. The package method comprises the following steps of: 1, performing chemical etching and surface electroplating on the surface of a copper plate to manufacture a lead frame; 2, electroplating a layer of iron on the lower surface of the lead frame finished in the first step to manufacture the composite material lead frame; 3, loading and routing the front face of the composite material lead frame finished in the second step; 4, placing the loaded and routed lead frame between an upper die and a lower die connected with an electromagnet, after the lead frame is placed at an appointed position, turning on a switch of the electromagnet so that the lower die is tightly absorbed on the lead wire, and performing die-assembly injection at that moment; and 5, selectively removing or not removing the iron from the lower surface of the lead frame as required. During package, the magnetic lead frame is absorbed on a package die through the switch of the electromagnet connected with the package die; therefore, the conventional back-face adhesive film is eliminated, the manufacturing cost of the lead frame is reduced and the product yield is increased.

Description

Composite material leadframe package method and encapsulating mould structure thereof
Technical field
The present invention relates to a kind of lead frame makes and method for packing.Belong to the semiconductor packaging field.
Background technology
The method for packing of conventional lead frame, be to adopt earlier after chemical etching and electroplating surface are carried out in the front of metal substrate, stick the resistant to elevated temperatures glued membrane of one deck again at the back side of metal substrate and form the leadframe carrier (as shown in Figure 1) that to carry out encapsulation process, again leadframe carrier is carried out the load routing, carry out the encapsulation of plastic packaging material at last again.But because but the glued membrane of one deck costliness high temperature resistance must be sticked in this kind packaged type lead frame back side, so directly increased packaging cost.Again because glued membrane quality softness, in load routing process, cause problems such as the loosening and solder joint of routing is not firm easily, as Fig. 2.And it is bad glue-film stickup to occur through regular meeting in encapsulation process, thereby causes plastic packaging material flash in the encapsulation process to form defective products to the Ji Dao or the pin in lead frame front.
Summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, provide a kind of packaging cost low, can not cause problems such as routing is bad and composite material leadframe package method and the encapsulating mould structure thereof that can effectively avoid flash.
First purpose of the present invention is achieved in that a kind of composite material leadframe package method, and described method comprises following processing step:
Step 1, get a copper coin and carry out chemical etching and electroplating surface, be made into lead frame on its surface;
The lower surface of step 2, lead frame that step 1 is completed is electroplated one deck iron, is made into the composite material lead frame;
The load routing is carried out in step 3, the composite material lead frame front that step 2 is completed;
Step 4, the lead frame that will finish behind the load routing are positioned between a patrix and the counterdie, and counterdie is connected with electromagnet, after lead frame is placed into assigned address, opens the switch of electromagnet, and counterdie is that adsorbed close is lived lead frame, carry out mold-closing injection this moment again;
Seal finish after, can be as required, the mode of selecting the Tie Tong of lead frame lower surface to be crossed acid corrosion is removed or is not removed:
Step 5, the iron layer that will seal the lead frame lower surface after finishing are removed by acid corrosion.
Second purpose of the present invention is achieved in that a kind of composite material leadframe package mould structure, described mould structure comprises lead frame, lead frame adopts copper material to make, lead frame comprises Ji Dao and pin, the lead frame lower surface is coated with one deck iron, lead frame is provided with chip and metal wire, and the described lead frame that is provided with chip and metal wire is positioned between a patrix and the counterdie, is connected with electromagnet on the counterdie.
The present invention can also be applied with on the described patrix and another opposite electromagnet of electromagnet polarity on the described counterdie.
Because lead frame and counterdie adsorbed close, plastic packaging material can not pierce the bottom of Ji Dao and pin on the lead frame, has saved pad pasting.After treating that plastic packaging material solidifies, promptly finished traditional operation of sealing.
The invention has the beneficial effects as follows:
Problems such as the inventive method adopts the lead frame structure of copper work, and the glued membrane at the back side has been saved in back side plating iron, has not only reduced packaging cost, and in load routing technology, it is bad can not routing to occur, and solder joint is loosening.And when follow-up encapsulation, adopt magnetic encapsulating mold to seal plastic packaging material,, control whether adsorb the magnetic lead frame by selecting opening or closing of electromagnet.When encapsulating mold adsorbs lead frame, can effectively avoid flash.
Description of drawings
Fig. 1 was for sticked the schematic diagram of high temperature resistant glued membrane in the past at the lead frame back side.
Fig. 2 is the lead frame routing schematic diagram of rubberizing film in the past.
Fig. 3 is a lead frame structure schematic diagram of the present invention.
Fig. 4 is a composite material lead frame structure schematic diagram of the present invention.
Fig. 5 is a lead frame routing schematic diagram of the present invention.
Fig. 6 is a composite material leadframe package mould structure schematic diagram of the present invention.
Reference numeral among the figure:
Base island 1
Pin 2
Glued membrane 3
The company's of etching partially muscle 4
Iron 5
Chip 6
Metal wire 7
Chopper 8
Patrix 9
Counterdie 10
Electromagnet 11.
Embodiment
The composite material leadframe package method that the present invention relates to, described method comprises following processing step:
Step 1, get a copper coin and carry out chemical etching and electroplating surface, form basic island 1, pin 2 and the company's of etching partially muscle 4, finish the production of lead frame, as Fig. 3 on its surface.
The lower surface of step 2, lead frame that step 1 is completed is electroplated one deck iron, is made into the composite material lead frame, as Fig. 4.
The load routing is carried out in step 3, the composite material lead frame front that step 2 is completed, as Fig. 5.
Step 4, the lead frame that will finish behind the load routing are positioned between a patrix 9 and the counterdie 10, counterdie 10 is connected with electromagnet 11, after lead frame is placed into assigned address, open the switch of electromagnet 11, counterdie 10 is that adsorbed close is lived lead frame, as Fig. 6, carries out mold-closing injection this moment again, after treating that plastic packaging material solidifies, promptly finished traditional operation of sealing.
Step 5, the iron layer that will seal the lead frame lower surface after finishing are removed by acid corrosion.Because iron is different with the metal active of copper, the process of corrosion iron can not influence other performances of product.
Referring to Fig. 6, Fig. 6 is a composite material leadframe package mould structure schematic diagram of the present invention.As seen from Figure 6, the composite material leadframe package mould structure that the present invention relates to, described mould structure comprises lead frame, lead frame adopts copper material to make, lead frame comprises basic island 1 and pin 2, and the lead frame lower surface is coated with one deck iron 5, and lead frame is provided with chip 6 and metal wire 7, the described lead frame that is provided with chip 6 and metal wire 7 is positioned between a patrix 9 and the counterdie 10, is connected with electromagnet 11 on the counterdie 10.
The present invention can also be applied with on the described patrix 9 with described counterdie 10 on electromagnet 11 opposite polarity another electromagnet (not shown)s, with avoid having on the patrix with counterdie 9 on opposite polarity polarity.

Claims (5)

1. composite material leadframe package method, it is characterized in that: described method comprises following processing step:
Step 1, get a copper coin and carry out chemical etching and electroplating surface, be made into lead frame on its surface;
The lower surface of step 2, lead frame that step 1 is completed is electroplated one deck iron, is made into the composite material lead frame;
The load routing is carried out in step 3, the composite material lead frame front that step 2 is completed;
Step 4, the lead frame that will finish behind the load routing are positioned between a patrix and the counterdie, and counterdie is connected with electromagnet, after lead frame is placed into assigned address, opens the switch of electromagnet, and counterdie is that adsorbed close is lived lead frame, carry out mold-closing injection this moment again.
2. a kind of composite material leadframe package method according to claim 1, it is characterized in that: described method comprises following processing step:
Step 5, the iron layer that will seal the lead frame lower surface after finishing are removed by acid corrosion.
3. a kind of composite material leadframe package method according to claim 1 and 2 is characterized in that: be applied with on the described patrix and another opposite electromagnet of electromagnet polarity on the described counterdie.
4. composite material leadframe package mould structure, it is characterized in that: described mould structure comprises lead frame, lead frame adopts copper material to make, lead frame comprises Ji Dao (1) and pin (2), the lead frame lower surface is coated with one deck iron (5), lead frame is provided with chip (6) and metal wire (7), and the described lead frame that is provided with chip (6) and metal wire (7) is positioned between a patrix (9) and the counterdie (10), is connected with electromagnet (11) on the counterdie (10).
5. a kind of composite material leadframe package mould structure according to claim 4 is characterized in that: be applied with on the described patrix (9) with described counterdie (10) on opposite polarity another electromagnet of electromagnet (11).
CN2011101654343A 2011-06-20 2011-06-20 Package method and package die structure of composite material lead frame Pending CN102244020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101654343A CN102244020A (en) 2011-06-20 2011-06-20 Package method and package die structure of composite material lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101654343A CN102244020A (en) 2011-06-20 2011-06-20 Package method and package die structure of composite material lead frame

Publications (1)

Publication Number Publication Date
CN102244020A true CN102244020A (en) 2011-11-16

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681579A (en) * 2013-12-05 2014-03-26 江苏长电科技股份有限公司 Secondary first-corrosion-then-plating metal frame subtraction burying chip obverse-mounting flat foot structure and technology method
CN105390470A (en) * 2014-08-25 2016-03-09 英飞凌科技股份有限公司 leadframe strip with sawing enhancement feature
WO2016074437A1 (en) * 2014-11-13 2016-05-19 京东方科技集团股份有限公司 Encapsulating device and method
CN110230086A (en) * 2019-07-22 2019-09-13 衢州后瑞机械设备有限公司 A kind of lithium battery active electrode plating technique

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278842A (en) * 1989-04-20 1990-11-15 Fujitsu Ltd Holding-down mechanism of lead frame
JPH03240260A (en) * 1990-02-19 1991-10-25 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit device
JPH05335369A (en) * 1991-10-04 1993-12-17 Hitachi Ltd Wire bonding apparatus
JPH09172122A (en) * 1996-12-02 1997-06-30 Hitachi Chem Co Ltd Manufacture of board provided with semiconductor mounting lead
CN1917199A (en) * 2005-08-15 2007-02-21 半导体元件工业有限责任公司 Semiconductor component and method of manufacture
CN101553901A (en) * 2005-05-10 2009-10-07 德克萨斯仪器股份有限公司 Magnetic assist manufacturing to reduce mold flash and assist with heat slug assembly

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278842A (en) * 1989-04-20 1990-11-15 Fujitsu Ltd Holding-down mechanism of lead frame
JPH03240260A (en) * 1990-02-19 1991-10-25 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit device
JPH05335369A (en) * 1991-10-04 1993-12-17 Hitachi Ltd Wire bonding apparatus
JPH09172122A (en) * 1996-12-02 1997-06-30 Hitachi Chem Co Ltd Manufacture of board provided with semiconductor mounting lead
CN101553901A (en) * 2005-05-10 2009-10-07 德克萨斯仪器股份有限公司 Magnetic assist manufacturing to reduce mold flash and assist with heat slug assembly
CN1917199A (en) * 2005-08-15 2007-02-21 半导体元件工业有限责任公司 Semiconductor component and method of manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681579A (en) * 2013-12-05 2014-03-26 江苏长电科技股份有限公司 Secondary first-corrosion-then-plating metal frame subtraction burying chip obverse-mounting flat foot structure and technology method
CN103681579B (en) * 2013-12-05 2016-03-30 江苏长电科技股份有限公司 Secondary etching-prior-to-plametal metal frame subtraction buries the flat leg structure of chip formal dress and process
CN105390470A (en) * 2014-08-25 2016-03-09 英飞凌科技股份有限公司 leadframe strip with sawing enhancement feature
WO2016074437A1 (en) * 2014-11-13 2016-05-19 京东方科技集团股份有限公司 Encapsulating device and method
US9673356B2 (en) 2014-11-13 2017-06-06 Boe Technology Group Co., Ltd. Packaging device and packaging method
CN110230086A (en) * 2019-07-22 2019-09-13 衢州后瑞机械设备有限公司 A kind of lithium battery active electrode plating technique
CN110230086B (en) * 2019-07-22 2020-12-29 广西电网有限责任公司防城港供电局 Active electrode electroplating process for lithium battery

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Application publication date: 20111116