JPH02278842A - Holding-down mechanism of lead frame - Google Patents
Holding-down mechanism of lead frameInfo
- Publication number
- JPH02278842A JPH02278842A JP1100889A JP10088989A JPH02278842A JP H02278842 A JPH02278842 A JP H02278842A JP 1100889 A JP1100889 A JP 1100889A JP 10088989 A JP10088989 A JP 10088989A JP H02278842 A JPH02278842 A JP H02278842A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- stage
- mounting table
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007246 mechanism Effects 0.000 title description 19
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000000696 magnetic material Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 12
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 241001504592 Trachurus trachurus Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔１既 要〕
金属薄板の内側に櫛状をした複数のリードを設けたリー
ドフレームの押さえ機構に関し、磁性薄板金属により形
成したリードフレームの全体を磁界により均一に吸引し
て固定するリードフレームの押さえ機構の提供を目的と
し、平坦な表面を有する非磁性材料、若しくは保磁力の
小さな磁性材料により形成した載置台と、載置台の裏面
に配置されてオン動作時には載置台上に磁界を作り、オ
フ動作時には磁界を作らない電磁石とを含んで構成し、
載置台の表面に載置した磁性薄板金属により形成したリ
ードフレームを、電磁石をオン・オフ動作させて、載置
台の表面に吸引する状態と吸引しない状態を任意に作る
ように構成する。[Detailed Description of the Invention] [1 Summary] Regarding a holding mechanism for a lead frame in which a plurality of comb-shaped leads are provided inside a thin metal plate, the entire lead frame formed of a magnetic thin metal plate is uniformly attracted by a magnetic field. The purpose is to provide a holding mechanism for the lead frame that is fixed by using a mounting base made of a non-magnetic material with a flat surface or a magnetic material with a small coercive force, and a mounting base that is placed on the back side of the mounting base and is placed on the back side of the mounting base when the lead frame is turned on. It is composed of an electromagnet that creates a magnetic field on the stand and does not create a magnetic field during off operation,
A lead frame made of a magnetic thin metal sheet placed on the surface of a mounting table is configured to be attracted to the surface of the mounting table and a state in which it is not attracted by turning an electromagnet on and off.
本発明は、リードフレームの押さえ機構、特にリードフ
レーム全体を磁界により均一に吸引して固定することの
できるリードフレームの押さえ機構に関する。The present invention relates to a lead frame holding mechanism, and more particularly to a lead frame holding mechanism that can uniformly attract and fix the entire lead frame using a magnetic field.
リードフレームに搭載した半導体チップの電極とリード
フレームのリードとの接続は、金属細線を電極とリード
にボンディングして行っている。The electrodes of the semiconductor chip mounted on the lead frame are connected to the leads of the lead frame by bonding thin metal wires to the electrodes and leads.
そして、金属細線とリード間の接合強度を確保するため
には、ボンディング時にリードが動かないようにするこ
とが重要である。In order to ensure the bonding strength between the thin metal wire and the lead, it is important to prevent the lead from moving during bonding.
特に、金属細線をリード表面に押しつけた状態で、金属
細線をリード表面と平行に振動させて金属細線とリード
を接合する超音波ボンディングにおいては取り分は重要
である。Particularly, the ratio is important in ultrasonic bonding, in which the thin metal wire is pressed against the lead surface and the thin metal wire is vibrated parallel to the lead surface to bond the thin metal wire and the lead.
次に、前記超音波ワイヤボンダーで使用されている従来
のリードフレームの押さえ機構について図面を参照しな
がら説明する。Next, a conventional lead frame holding mechanism used in the ultrasonic wire bonder will be described with reference to the drawings.
第３図は従来のリードフレームの押さえ機構の説明図で
あって、同図（ａ）〜（ｃ）はワイヤボンディング作業
の流れを説明するための上記押さえ機構の要部側断面図
、同図（ｄ）は同図（ｃ）の平面図である。FIG. 3 is an explanatory diagram of a conventional lead frame holding mechanism, and FIGS. 3(a) to 3(c) are side sectional views of main parts of the holding mechanism for explaining the flow of wire bonding work, and FIG. (d) is a plan view of the same figure (c).
図において、１は金Ｈ，ａ板の内側部分に櫛状をした複
数のリード１ａを有するリードフレーム、２はリードフ
レームに搭載された半導体チップ、３はリードフレーム
を載置する載置台、４は載置台を加熱する加熱ヒータ、
５は紙面表面より裏面に伸びて図示してない押さえ板駆
動機構に連結して下方に移動する押さえ板、６は金線７
をリードｌａと半導体チップ２の電極に接合するボンデ
ィングツールであるキャピラリー、７はキャピラリーの
中心に設けた貫通孔に通した直径が２５μｍの金線をそ
れぞれ示す。In the figure, 1 is a lead frame having a plurality of comb-shaped leads 1a on the inner side of the gold H, a plate, 2 is a semiconductor chip mounted on the lead frame, 3 is a mounting table on which the lead frame is placed, and 4 is a heater that heats the mounting table,
5 is a holding plate that extends from the front side of the page to the back side and moves downward by being connected to a holding plate drive mechanism (not shown); 6 is a gold wire 7
A capillary is a bonding tool for bonding the leads la to the electrodes of the semiconductor chip 2, and 7 represents a gold wire with a diameter of 25 μm passed through a through hole provided at the center of the capillary.
尚、同じ部品・材料に対しては全図を通して同じ記号を
付与しである。Note that the same symbols are given to the same parts and materials throughout the drawings.
次に、上記構成のリードフレームの押さえ機構によりリ
ードフレームを載置台に押圧してリードと金線を超音波
ボンディングにより接合する方法を説明する。Next, a method will be described in which the lead frame is pressed against the mounting table using the lead frame holding mechanism configured as described above and the leads and the gold wire are bonded by ultrasonic bonding.
始めに、半導体チップ２を搭載したリードフレームｌを
加熱ヒータ４により２５０℃程度に加熱さた載置台３上
に載置する。First, the lead frame 1 on which the semiconductor chip 2 is mounted is placed on the mounting table 3 heated to about 250° C. by the heater 4 .
この時、押さえ板５はリードフレームの上方に位置して
いる（同図（ａ）参照）。At this time, the presser plate 5 is located above the lead frame (see FIG. 3(a)).
次に、図示してない載置台駆動装置を作動させて、載置
台を上方に数Ｏｍ程度垂直に上昇させると共に、押さえ
板駆動機構も駆動して押さえ板５を下方に数ｍｍ程度垂
直に下降させて、押さえ板の下面を載置台３上に載置さ
れたリードフレーム表面に当接させて押圧する（同図（
ｂ）参照）。Next, the mounting table driving device (not shown) is activated to vertically raise the mounting table upward by several 0m, and the holding plate driving mechanism is also driven to lower the holding plate 5 vertically downward by several mm. Then, bring the lower surface of the presser plate into contact with the surface of the lead frame placed on the mounting table 3 and press it (see the same figure).
b)).
そして、図示してないキャピラリー駆動装置のによりキ
ャピラリーを所定のシーケンスに従って作動させて半導
体チップの電極とリードに金線１７を超音波ボンディン
グする。（同図（Ｃ）、同図（ｄ）参照）。Then, a capillary driving device (not shown) operates the capillary according to a predetermined sequence to perform ultrasonic bonding of the gold wire 17 to the electrodes and leads of the semiconductor chip. (See figure (C) and figure (d)).
然し、従来のリードフレームの押さえ機構は、ボンディ
ング際のリードの動きを無くすることはできなかった。However, conventional lead frame holding mechanisms cannot eliminate lead movement during bonding.
これは、リードの先端部までは押さえ板により固定でき
ないこと、及びリードに厚さのバラツキがあることによ
るものである。This is due to the fact that the tip of the lead cannot be fixed by the presser plate and the lead has variations in thickness.
この為、該リードに金線を押圧して、金線を横方向に振
動させてもリードが金線と一緒に振動して、金線とリー
ドの界面で十分な摩擦運動が起こらない。For this reason, even if a gold wire is pressed against the lead and the gold wire is vibrated in the lateral direction, the lead vibrates together with the gold wire, and sufficient frictional movement does not occur at the interface between the gold wire and the lead.
この結果、金線とリード間で完全な接合が形成されない
ために、軽度の振動、衝撃、ストレス等により簡単に金
線がリードから剥離する等の問題が発生していた。As a result, a perfect bond is not formed between the gold wire and the lead, resulting in problems such as the gold wire easily peeling off from the lead due to slight vibrations, shocks, stress, etc.
本発明は、斯かる問題に鑑みてなされたものであって、
リードフレームを磁性薄板金属で形成して、該リードフ
レームの全体を磁界により均一に固定するリードフレー
ムの押さえ機構の提供を目的とするものである。The present invention has been made in view of such problems, and includes:
The object of the present invention is to provide a lead frame holding mechanism in which the lead frame is formed of a magnetic thin metal plate and the entire lead frame is fixed uniformly by a magnetic field.
上記課題は、第１図に示すように平坦な表面１３ａを有
する非磁性材料、若しくは保磁力の小さな磁性材料によ
り形成した載置台１３と、前記載置台の裏面１３ｂに配
置されてオン動作時には該載置台上に磁界１０を作り、
オフ動作時には前記磁界を作らない電磁石１２とを含ん
で構成し、前記載置台の表面に載置した磁性薄板金属に
より形成したリードフレーム１１を、前記電磁石をオン
・オフ動作させて、該Ｒ置台の表面に吸引する状態と吸
引しない状態を任意に作ることを特徴とするリードフレ
ームの押さえ機構により解決される。The above problem is solved by a mounting table 13 made of a non-magnetic material having a flat surface 13a or a magnetic material with a small coercive force as shown in FIG. Create a magnetic field 10 on the mounting table,
The electromagnet 12, which does not generate the magnetic field during off-operation, is placed on the surface of the mounting base, and the lead frame 11 is made of a magnetic thin sheet metal, and the electromagnet is turned on and off. This problem is solved by a holding mechanism for the lead frame, which is characterized by arbitrarily creating a state in which the surface is attracted and a state in which it is not attracted.
リードフレームを表面に載置する載置台は非磁性、若し
くは保磁力の小さな磁性材料により形成されている。The mounting table on which the lead frame is mounted is made of a non-magnetic material or a magnetic material with a small coercive force.
また、この載置台の裏面直下部にはオン・オフ動作する
１ｍ石が配置されて、電磁石をオン動作させると該電磁
石はｉａｔ台上に磁界を作る。Further, a 1 m stone that turns on and off is placed directly below the back surface of this mounting table, and when the electromagnet is turned on, the electromagnet creates a magnetic field on the IAT table.
従って、磁性材料で形成したリードフレームをｉ１２置
装上に載置して電磁石をオン動作させると、リードフレ
ーム全体が載置台表面に磁力により吸引されて固定され
る。Therefore, when a lead frame made of a magnetic material is placed on the i12 device and the electromagnet is turned on, the entire lead frame is attracted and fixed to the surface of the mounting table by magnetic force.
従って、リードフレームの全てのリードも載置台表面に
磁力により固定されているために、超音波ボンディング
時にリードは動くことはない。Therefore, since all the leads of the lead frame are also fixed to the surface of the mounting table by magnetic force, the leads do not move during ultrasonic bonding.
電磁石をオフ動作させると、磁界は無くなるために載置
台上に載置されたリードフレームの移動と取り外しは簡
単にできる。When the electromagnet is turned off, the magnetic field disappears, so the lead frame placed on the mounting table can be easily moved and removed.
以下、本発明のリードフレームの押さえ機構を実施例に
基づいて詳細に説明する。Hereinafter, the lead frame holding mechanism of the present invention will be described in detail based on examples.
第２図は、本発明の一実施例の要部側断面図を示すもの
である。FIG. 2 shows a side sectional view of a main part of an embodiment of the present invention.
即ち、本発明の一実施例のリードフレームの押さえ機構
は、正面から棒状の加熱ヒータ４を挿通したステンレス
鋼製の載１台１３と、オン・オフ動作して磁界１０の形
成と非形成を行う軟鉄芯１６ａを使った電磁石１６と、
載置台１３と電磁石１６との間に装着されて電磁石１６
を断熱するセラミック製の断熱板１４と、及びステンレ
ス鋼製お押さえ板１５より構成されている。That is, the lead frame holding mechanism of one embodiment of the present invention includes a stainless steel support 13 into which a rod-shaped heater 4 is inserted from the front, and which operates on and off to control the formation and non-formation of the magnetic field 10. An electromagnet 16 using a soft iron core 16a,
The electromagnet 16 is installed between the mounting table 13 and the electromagnet 16.
It is composed of a ceramic heat insulating plate 14 that insulates the area, and a stainless steel holding plate 15.
斯かる構成をした本発明の一実施例のリードフレームの
押さえ機構によるリードフレーム１１の固定は次のよう
にして実施される。The lead frame 11 is fixed by the lead frame holding mechanism of the embodiment of the present invention having such a configuration as follows.
先ず、半導体チップ２を搭載した鉄−ニッケル系の磁性
金属薄板で形成したリードフレーム１工がｆ２２台上に
載置される。First, a lead frame made of an iron-nickel magnetic metal thin plate on which the semiconductor chip 2 is mounted is placed on the f22 stand.
次に、図示してない駆動装置を作動させて、該駆動装置
により裁置台を上方に数ｍｍ程度垂直に上昇させると共
に、押さえ板を下方に数ｍｍ程度垂直に下降させて、押
さえ板の下面を載置台上に載１されたリードフレームに
当接させて該リードフレームを押圧する。Next, a drive device (not shown) is activated, and the drive device vertically raises the processing table upwards by several millimeters, and at the same time vertically lowers the presser plate by several millimeters, so that the lower surface of the presser plate is brought into contact with the lead frame placed on the mounting table to press the lead frame.
この状態のリードフレームは、半導体チップを搭載した
部分とリードの先端部を除いた部分は押さえ仮により押
圧されて固定されているが、半導体チップを搭載した部
分とリードの先端部は押さえ板により押圧されていない
。In this state, the lead frame except for the part on which the semiconductor chip is mounted and the tip of the lead is pressed and fixed by the holding plate, but the part on which the semiconductor chip is mounted and the tip of the lead are held by the holding plate. Not pressed.
従って、この時にはリードフレームのリードは動くもの
がある状態である。Therefore, at this time, there is some movement in the leads of the lead frame.
然し、電磁石１６をオン動作させて磁界１０を形成する
と、リードフレーム全体が［１台の表面に磁力により吸
引されて固定される。However, when the electromagnet 16 is turned on to form the magnetic field 10, the entire lead frame is attracted and fixed to one surface by magnetic force.
この結果、押さえ板により押圧しただけでは固定するこ
とのできなかったリードの先端等も固定されて動かなく
なる。As a result, the tips of the leads, etc., which could not be fixed simply by pressing with the presser plate, are also fixed and do not move.
このように固定した後に、リードの先端、半導体チップ
に金線をボンディングする。After fixing in this manner, a gold wire is bonded to the tip of the lead and the semiconductor chip.
また、ボンディング終了後、電磁石をオフ動作すると磁
界は直ちに無くなるために、リードフレームを載置台上
で簡単に移動可能であるし、簡単に載置台から取り外す
ことも可能である。Further, when the electromagnet is turned off after bonding is completed, the magnetic field disappears immediately, so the lead frame can be easily moved on the mounting table and easily removed from the mounting table.
以上の説明から明らかなように本発明のリードフレーム
の押さえ機構によれば、ボンディング時にリードの先端
も含めてリードフレームの全体をリードフレームを載置
した！３！置装に固定することが可能となる。As is clear from the above description, according to the lead frame holding mechanism of the present invention, the entire lead frame, including the tips of the leads, can be placed on the lead frame during bonding! 3! It becomes possible to fix it to the device.
この結果、金線はリードの所定位置に確実にボンディン
グされ、十分なボンディング強度を有する金線とリード
との接合が得られる。As a result, the gold wire is reliably bonded to the predetermined position of the lead, and a bond between the gold wire and the lead having sufficient bonding strength can be obtained.
特に、超音波エネルギーを利用した超音波ボンディング
においては、リードが超音波振動しているキャピラリー
と一緒に動くことはない。In particular, in ultrasonic bonding using ultrasonic energy, the lead does not move together with the ultrasonically vibrating capillary.
従って、超音波エネルギーが金線とリードとの接触面に
集中することにより、金線とリードとの十分な接合かえ
られることになる。Therefore, by concentrating the ultrasonic energy on the contact surface between the gold wire and the lead, sufficient bonding between the gold wire and the lead can be achieved.
１４は断熱板、 １６は電磁石をそれぞれ示す。14 is a heat insulation board; Reference numeral 16 indicates an electromagnet.
第１図は本発明の原理説明図、
第２図は本発明の一実施例の要部側断面図、第３図は従
来のリードフレームの押さえ機構の説明図である。
図において、
１と１１はリードフレーム、
２は半導体チップ、
３と１３は載置台、
４は加熱ヒータ、
５と１５は押さえ板、
６はキャピラリー
７は金線、
１０は磁界、
／￥−を朔−掌理成朔図
第１図
／￥発明ｎ−笑鯵例めす節側訴面ば
第 ２スFIG. 1 is an explanatory diagram of the principle of the present invention, FIG. 2 is a sectional side view of a main part of an embodiment of the present invention, and FIG. 3 is an explanatory diagram of a conventional lead frame holding mechanism. In the figure, 1 and 11 are lead frames, 2 is a semiconductor chip, 3 and 13 are mounting tables, 4 is a heater, 5 and 15 are holding plates, 6 is a capillary 7 is a gold wire, 10 is a magnetic field, /¥- Saku-Sho Ri Seisaku Diagram 1/￥Invention n-Sho horse mackerel example female clause side appeal page 2nd page
Claims (1)
磁力の小さな磁性材料により形成した載置台（１３）と
、 前記載置台の裏面（１３ｂ）に配置されてオン動作時に
は該載置台上に磁界（１０）を作り、オフ動作時には前
記磁界を作らない電磁石（１２）とを含んで構成し、 前記載置台の表面に載置した磁性薄板金属により形成し
たリードフレーム（１１）を、前記電磁石をオン・オフ
動作させて、該載置台の表面に吸引する状態と吸引しな
い状態を任意に作ることを特徴とするリードフレームの
押さえ機構。[Claims] A mounting table (13) formed of a non-magnetic material having a flat surface (13a) or a magnetic material with a small coercive force, and a mounting table (13) disposed on the back surface (13b) of the mounting table and arranged on the back surface (13b) of the mounting table when turned on. An electromagnet (12) that creates a magnetic field (10) on the mounting table and does not create the magnetic field during off-operation, and a lead frame (11) formed of a magnetic thin plate metal placed on the surface of the mounting table. ), the electromagnet is turned on and off to arbitrarily create a state in which it is attracted to the surface of the mounting table and a state in which it is not attracted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1100889A JPH02278842A (en) | 1989-04-20 | 1989-04-20 | Holding-down mechanism of lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1100889A JPH02278842A (en) | 1989-04-20 | 1989-04-20 | Holding-down mechanism of lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02278842A true JPH02278842A (en) | 1990-11-15 |
Family
ID=14285898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1100889A Pending JPH02278842A (en) | 1989-04-20 | 1989-04-20 | Holding-down mechanism of lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02278842A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006317321A (en) * | 2005-05-13 | 2006-11-24 | Denso Corp | Physical quantity sensor device |
| CN102244020A (en) * | 2011-06-20 | 2011-11-16 | 江苏长电科技股份有限公司 | Package method and package die structure of composite material lead frame |
-
1989
- 1989-04-20 JP JP1100889A patent/JPH02278842A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006317321A (en) * | 2005-05-13 | 2006-11-24 | Denso Corp | Physical quantity sensor device |
| JP4492432B2 (en) * | 2005-05-13 | 2010-06-30 | 株式会社デンソー | Manufacturing method of physical quantity sensor device |
| CN102244020A (en) * | 2011-06-20 | 2011-11-16 | 江苏长电科技股份有限公司 | Package method and package die structure of composite material lead frame |
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