CN102227825B - 光电子半导体芯片以及用于制造光电子半导体芯片的方法 - Google Patents

光电子半导体芯片以及用于制造光电子半导体芯片的方法 Download PDF

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Publication number
CN102227825B
CN102227825B CN200980148152.3A CN200980148152A CN102227825B CN 102227825 B CN102227825 B CN 102227825B CN 200980148152 A CN200980148152 A CN 200980148152A CN 102227825 B CN102227825 B CN 102227825B
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radiation
outcoupling
outcoupling structure
semiconductor layer
layer sequence
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CN102227825A (zh
Inventor
尼古劳斯·格迈因维泽
马蒂亚斯·扎巴蒂尔
安德烈亚斯·莱贝尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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CN200980148152.3A 2008-12-23 2009-11-02 光电子半导体芯片以及用于制造光电子半导体芯片的方法 Active CN102227825B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008062932.4 2008-12-23
DE102008062932A DE102008062932A1 (de) 2008-12-23 2008-12-23 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/DE2009/001550 WO2010072187A2 (de) 2008-12-23 2009-11-02 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

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CN102227825A CN102227825A (zh) 2011-10-26
CN102227825B true CN102227825B (zh) 2014-09-24

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US (1) US8816353B2 (https=)
EP (1) EP2368278B1 (https=)
JP (1) JP5646503B2 (https=)
KR (1) KR101678242B1 (https=)
CN (1) CN102227825B (https=)
DE (1) DE102008062932A1 (https=)
WO (1) WO2010072187A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009019161A1 (de) 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102011117381A1 (de) 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2613367A3 (en) * 2012-01-06 2013-09-04 Imec Method for producing a led device .
US8896008B2 (en) * 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
JP7007923B2 (ja) * 2018-01-16 2022-01-25 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
DE102018119622A1 (de) * 2018-08-13 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2020157741A1 (en) * 2019-01-28 2020-08-06 B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University Structure for a waveguide facet
WO2021149043A1 (en) * 2020-01-20 2021-07-29 B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University Structure for a waveguide facet
DE102020112414A1 (de) * 2020-05-07 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Strahlung emittierenden Halbleiterbauelements

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313606A1 (de) * 2003-03-26 2004-10-14 Osram Opto Semiconductors Gmbh Mechanische Mikrostrukturierung eines Halbleiterchips
CN1672270A (zh) * 2002-07-31 2005-09-21 奥斯兰姆奥普托半导体有限责任公司 GaN基发射辐射的薄膜半导体器件
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
US20070269918A1 (en) * 2006-05-19 2007-11-22 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing nitride-based semiconductor light emitting device
US20070267640A1 (en) * 2005-05-19 2007-11-22 Samsung Electro-Mechanics Co.,Ltd. Semiconductor light emitting diode and method of manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026A (en) * 1850-01-15 Door-lock
DE10111501B4 (de) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10139723A1 (de) * 2001-08-13 2003-03-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Chip und strahlungsemittierendes Bauelement
DE10340271B4 (de) 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
EP1665398B1 (de) 2003-09-26 2014-07-02 OSRAM Opto Semiconductors GmbH Strahlungsemittierender dünnschicht-halbleiterchip
DE102005007601B4 (de) 2004-02-20 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Vorrichtung mit einer Mehrzahl optoelektronischer Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
KR100631133B1 (ko) 2005-05-31 2006-10-02 삼성전기주식회사 수직구조 질화물계 반도체 발광 다이오드
JP4986445B2 (ja) 2005-12-13 2012-07-25 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
KR100764403B1 (ko) 2006-05-11 2007-10-05 삼성전기주식회사 아조벤젠기 폴리머를 이용한 미세 패터닝 방법을 이용한 질화물계 반도체 발광소자의 제조방법
JP5318353B2 (ja) * 2007-02-14 2013-10-16 三菱化学株式会社 ＧａＮ系ＬＥＤ素子および発光装置
DE102007061140A1 (de) 2007-12-19 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Kühlelement

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1672270A (zh) * 2002-07-31 2005-09-21 奥斯兰姆奥普托半导体有限责任公司 GaN基发射辐射的薄膜半导体器件
DE10313606A1 (de) * 2003-03-26 2004-10-14 Osram Opto Semiconductors Gmbh Mechanische Mikrostrukturierung eines Halbleiterchips
US20070267640A1 (en) * 2005-05-19 2007-11-22 Samsung Electro-Mechanics Co.,Ltd. Semiconductor light emitting diode and method of manufacturing the same
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
US20070269918A1 (en) * 2006-05-19 2007-11-22 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing nitride-based semiconductor light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-220972A 2007.08.30

Also Published As

Publication number Publication date
DE102008062932A1 (de) 2010-06-24
WO2010072187A3 (de) 2010-10-21
KR101678242B1 (ko) 2016-11-21
EP2368278B1 (de) 2014-03-12
EP2368278A2 (de) 2011-09-28
CN102227825A (zh) 2011-10-26
US20120146044A1 (en) 2012-06-14
US8816353B2 (en) 2014-08-26
WO2010072187A2 (de) 2010-07-01
JP2012513681A (ja) 2012-06-14
JP5646503B2 (ja) 2014-12-24
KR20110101220A (ko) 2011-09-15

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