CN102227811B - 固体图像拍摄元件以及图像拍摄装置 - Google Patents
固体图像拍摄元件以及图像拍摄装置 Download PDFInfo
- Publication number
- CN102227811B CN102227811B CN201080003383.8A CN201080003383A CN102227811B CN 102227811 B CN102227811 B CN 102227811B CN 201080003383 A CN201080003383 A CN 201080003383A CN 102227811 B CN102227811 B CN 102227811B
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- mentioned
- micro
- photosensitive unit
- image capturing
- solid
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 11
- 230000036211 photosensitivity Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011295 pitch Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 208000003164 Diplopia Diseases 0.000 description 4
- 208000029444 double vision Diseases 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 210000004276 hyalin Anatomy 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-233288 | 2009-10-07 | ||
JP2009233288 | 2009-10-07 | ||
PCT/JP2010/005774 WO2011043025A1 (ja) | 2009-10-07 | 2010-09-24 | 固体撮像素子および撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102227811A CN102227811A (zh) | 2011-10-26 |
CN102227811B true CN102227811B (zh) | 2014-09-24 |
Family
ID=43856510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080003383.8A Expired - Fee Related CN102227811B (zh) | 2009-10-07 | 2010-09-24 | 固体图像拍摄元件以及图像拍摄装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8810698B2 (zh) |
JP (1) | JP5584679B2 (zh) |
CN (1) | CN102227811B (zh) |
WO (1) | WO2011043025A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011150552A1 (zh) * | 2010-06-01 | 2011-12-08 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
JP5834386B2 (ja) | 2010-08-20 | 2015-12-24 | ソニー株式会社 | 光学センサ、レンズモジュール、およびカメラモジュール |
JP2013077678A (ja) * | 2011-09-30 | 2013-04-25 | Sony Corp | 撮像素子、電子機器、並びに、製造方法 |
US20130083080A1 (en) * | 2011-09-30 | 2013-04-04 | Apple Inc. | Optical system and method to mimic zero-border display |
DE112012004513T5 (de) | 2011-10-28 | 2014-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Abbildungsvorrichtung |
CN103369217A (zh) * | 2012-04-06 | 2013-10-23 | 联想移动通信科技有限公司 | 一种具有多镜头的摄像装置和移动终端 |
US9425229B2 (en) * | 2012-09-03 | 2016-08-23 | Panasonic Intellectual Property Corporation Of America | Solid-state imaging element, imaging device, and signal processing method including a dispersing element array and microlens array |
US9202963B2 (en) * | 2012-11-21 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-side illumination image sensor chips and methods for forming the same |
US20140138520A1 (en) * | 2012-11-21 | 2014-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-Side Illumination Image Sensor Chips and Methods for Forming the Same |
US10148864B2 (en) | 2015-07-02 | 2018-12-04 | Pixart Imaging Inc. | Imaging device having phase detection pixels and regular pixels, and operating method thereof |
US9978154B2 (en) * | 2015-07-02 | 2018-05-22 | Pixart Imaging Inc. | Distance measurement device base on phase difference and distance measurement method thereof |
KR20170036415A (ko) | 2015-09-24 | 2017-04-03 | 삼성전자주식회사 | 양면 이미지 센서 |
JP2019128517A (ja) * | 2018-01-26 | 2019-08-01 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、及び、電子機器 |
WO2020111369A1 (ko) * | 2018-11-30 | 2020-06-04 | 엘지전자 주식회사 | 이미지 센서 및 그 제어 방법 |
US11456259B2 (en) * | 2019-03-27 | 2022-09-27 | Pyxis Cf Pte. Ltd. | Panel level packaging for devices |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326293A (ja) | 1993-05-12 | 1994-11-25 | Hamamatsu Photonics Kk | 光検出装置 |
US6927804B2 (en) * | 2002-09-09 | 2005-08-09 | Eastman Kodak Company | Reducing color aliasing artifacts from color digital images |
JP2005347709A (ja) | 2004-06-07 | 2005-12-15 | Sony Corp | 固体撮像素子 |
KR100494098B1 (ko) * | 2004-06-28 | 2005-06-10 | 엠텍비젼 주식회사 | Cmos 이미지 센서 |
JP2006054262A (ja) | 2004-08-10 | 2006-02-23 | Sony Corp | 固体撮像装置 |
JP4765285B2 (ja) | 2004-09-13 | 2011-09-07 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR100717851B1 (ko) * | 2004-12-14 | 2007-05-14 | 엘지전자 주식회사 | 미세가공 기술을 이용한 마이크로렌즈 배열 시트 및 그제조방법 |
JP4487944B2 (ja) * | 2006-02-09 | 2010-06-23 | ソニー株式会社 | 固体撮像装置 |
JP2007306387A (ja) * | 2006-05-12 | 2007-11-22 | Terrasem Co Ltd | カメラモジュール及びその製造方法 |
JP4855192B2 (ja) * | 2006-09-14 | 2012-01-18 | 富士フイルム株式会社 | イメージセンサ及びデジタルカメラ |
FR2924235B1 (fr) * | 2007-11-27 | 2010-08-20 | Commissariat Energie Atomique | Dispositif d'imagerie visible a filtre colore |
-
2010
- 2010-09-24 WO PCT/JP2010/005774 patent/WO2011043025A1/ja active Application Filing
- 2010-09-24 JP JP2011503289A patent/JP5584679B2/ja not_active Expired - Fee Related
- 2010-09-24 US US13/132,690 patent/US8810698B2/en not_active Expired - Fee Related
- 2010-09-24 CN CN201080003383.8A patent/CN102227811B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110234869A1 (en) | 2011-09-29 |
US8810698B2 (en) | 2014-08-19 |
WO2011043025A1 (ja) | 2011-04-14 |
JP5584679B2 (ja) | 2014-09-03 |
JPWO2011043025A1 (ja) | 2013-02-28 |
CN102227811A (zh) | 2011-10-26 |
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ASS | Succession or assignment of patent right |
Owner name: MATSUSHITA ELECTRIC (AMERICA) INTELLECTUAL PROPERT Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20140722 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140722 Address after: California, USA Applicant after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140924 Termination date: 20200924 |
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CF01 | Termination of patent right due to non-payment of annual fee |