CN102224561A - 射频溅射配置 - Google Patents
射频溅射配置 Download PDFInfo
- Publication number
- CN102224561A CN102224561A CN200980147149XA CN200980147149A CN102224561A CN 102224561 A CN102224561 A CN 102224561A CN 200980147149X A CN200980147149X A CN 200980147149XA CN 200980147149 A CN200980147149 A CN 200980147149A CN 102224561 A CN102224561 A CN 102224561A
- Authority
- CN
- China
- Prior art keywords
- vacuum chamber
- conductive part
- electrode
- ring
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001552 radio frequency sputter deposition Methods 0.000 title description 2
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 40
- 230000000007 visual effect Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000000740 bleeding effect Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 125000006850 spacer group Chemical group 0.000 description 15
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11735308P | 2008-11-24 | 2008-11-24 | |
US61/117,353 | 2008-11-24 | ||
PCT/IB2009/055201 WO2010058366A1 (en) | 2008-11-24 | 2009-11-20 | Rf sputtering arrangement |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102224561A true CN102224561A (zh) | 2011-10-19 |
CN102224561B CN102224561B (zh) | 2014-12-31 |
Family
ID=41650471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980147149.XA Active CN102224561B (zh) | 2008-11-24 | 2009-11-20 | 射频溅射配置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10224188B2 (zh) |
EP (1) | EP2368258B1 (zh) |
JP (1) | JP5648189B2 (zh) |
KR (1) | KR101670101B1 (zh) |
CN (1) | CN102224561B (zh) |
TW (1) | TWI424077B (zh) |
WO (1) | WO2010058366A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8295307B2 (en) * | 2009-05-07 | 2012-10-23 | Qualcomm Incorporated | System and method for adapting transmit data block size and rate based on quality of communication link |
US10266936B2 (en) | 2011-10-17 | 2019-04-23 | The United States Of America As Represented By The Secretary Of The Army | Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof |
US9779920B2 (en) * | 2013-08-14 | 2017-10-03 | Applied Materials, Inc. | Sputtering target with backside cooling grooves |
JP7446957B2 (ja) | 2020-09-03 | 2024-03-11 | ホシデン株式会社 | 検知センサ及びこれを備えた検知装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
EP1187172A2 (en) * | 2000-09-07 | 2002-03-13 | Ulvac, Inc. | Sputtering apparatus and film manufacturing method |
EP1906433A1 (en) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Plasma discharge film-forming apparatus and method |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3514391A (en) * | 1967-05-05 | 1970-05-26 | Nat Res Corp | Sputtering apparatus with finned anode |
US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
DE3427587A1 (de) * | 1984-07-26 | 1986-02-06 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen |
DE3612721C3 (de) * | 1986-04-16 | 1994-07-14 | Ver Glaswerke Gmbh | Durchlauf-Kathodenzerstäubungsanlage |
US6248219B1 (en) * | 1986-06-23 | 2001-06-19 | Unaxis Balzers Aktiengesellschaft | Process and apparatus for sputter etching or sputter coating |
CH668565A5 (de) | 1986-06-23 | 1989-01-13 | Balzers Hochvakuum | Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz. |
US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
JPH08232064A (ja) * | 1995-02-24 | 1996-09-10 | Hitachi Ltd | 反応性マグネトロンスパッタ装置 |
JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
US6905578B1 (en) * | 1998-04-27 | 2005-06-14 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure |
JP4164154B2 (ja) * | 1998-05-01 | 2008-10-08 | キヤノンアネルバ株式会社 | イオン化スパッタリング装置 |
JP2000067432A (ja) * | 1998-08-24 | 2000-03-03 | Asahi Komagu Kk | スパッタリング装置 |
JP4656697B2 (ja) * | 2000-06-16 | 2011-03-23 | キヤノンアネルバ株式会社 | 高周波スパッタリング装置 |
US6296747B1 (en) * | 2000-06-22 | 2001-10-02 | Applied Materials, Inc. | Baffled perforated shield in a plasma sputtering reactor |
US6645357B2 (en) * | 2001-11-05 | 2003-11-11 | Applied Materials, Inc. | Mesh shield in a sputter reactor |
JP4450654B2 (ja) * | 2004-03-25 | 2010-04-14 | 株式会社アルバック | スパッタ源及び成膜装置 |
DE102004014855A1 (de) * | 2004-03-26 | 2004-10-21 | Applied Films Gmbh & Co. Kg | Einrichtung zum reaktiven Sputtern |
JP4737548B2 (ja) | 2006-09-29 | 2011-08-03 | 本田技研工業株式会社 | 自動二輪車 |
JP5047087B2 (ja) * | 2008-07-31 | 2012-10-10 | 富士フイルム株式会社 | 成膜装置、成膜方法、圧電膜、および、液体吐出装置 |
JP5135106B2 (ja) * | 2008-07-31 | 2013-01-30 | 富士フイルム株式会社 | 成膜装置および成膜方法、並びに、液体吐出装置 |
JP5052455B2 (ja) * | 2008-08-13 | 2012-10-17 | 富士フイルム株式会社 | 成膜装置、成膜方法、圧電膜、および、液体吐出装置 |
US8066857B2 (en) | 2008-12-12 | 2011-11-29 | Fujifilm Corporation | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
-
2009
- 2009-11-20 WO PCT/IB2009/055201 patent/WO2010058366A1/en active Application Filing
- 2009-11-20 CN CN200980147149.XA patent/CN102224561B/zh active Active
- 2009-11-20 KR KR1020117011767A patent/KR101670101B1/ko active IP Right Grant
- 2009-11-20 JP JP2011536994A patent/JP5648189B2/ja active Active
- 2009-11-20 EP EP09796812.7A patent/EP2368258B1/en active Active
- 2009-11-23 US US12/623,573 patent/US10224188B2/en active Active
- 2009-11-23 TW TW098139740A patent/TWI424077B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
EP1187172A2 (en) * | 2000-09-07 | 2002-03-13 | Ulvac, Inc. | Sputtering apparatus and film manufacturing method |
EP1906433A1 (en) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Plasma discharge film-forming apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
US20100126853A1 (en) | 2010-05-27 |
TWI424077B (zh) | 2014-01-21 |
JP2012509988A (ja) | 2012-04-26 |
EP2368258B1 (en) | 2017-12-20 |
US10224188B2 (en) | 2019-03-05 |
TW201026872A (en) | 2010-07-16 |
KR20110097781A (ko) | 2011-08-31 |
WO2010058366A1 (en) | 2010-05-27 |
KR101670101B1 (ko) | 2016-10-27 |
JP5648189B2 (ja) | 2015-01-07 |
CN102224561B (zh) | 2014-12-31 |
EP2368258A1 (en) | 2011-09-28 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OURUIKANG ADVANCED TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20141114 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20141114 Address after: Liechtenstein bahls 9496 Ella Marley No. 18 Applicant after: Oerlikon Advanced Technology Co.,Ltd. Address before: Liechtenstein bahls 9496 Ella Marley No. 18 Applicant before: Oc Oerlikon Balzers AG |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Liechtenstein bahls 9496 Ella Marley No. 18 Patentee after: AIFA advanced technology Co.,Ltd. Address before: Liechtenstein bahls 9496 Ella Marley No. 18 Patentee before: Oerlikon Advanced Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20200305 Address after: Swiss Te Lui Bach Patentee after: EVATEC AG Address before: Liechtenstein bahls 9496 Ella Marley No. 18 Patentee before: AIFA advanced technology Co.,Ltd. |
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TR01 | Transfer of patent right |