CN102224277B - 外延反应器的反应室 - Google Patents

外延反应器的反应室 Download PDF

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Publication number
CN102224277B
CN102224277B CN200980146751.1A CN200980146751A CN102224277B CN 102224277 B CN102224277 B CN 102224277B CN 200980146751 A CN200980146751 A CN 200980146751A CN 102224277 B CN102224277 B CN 102224277B
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Prior art keywords
quartz
reaction chamber
reflective layer
component part
susceptor
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CN200980146751.1A
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Chinese (zh)
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CN102224277A (zh
Inventor
马里奥·普莱蒂
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LPE SpA
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LPE SpA
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
CN200980146751.1A 2008-11-24 2009-11-20 外延反应器的反应室 Active CN102224277B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2008A002092A IT1392068B1 (it) 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale
ITMI2008A002092 2008-11-24
PCT/IB2009/007505 WO2010058269A1 (en) 2008-11-24 2009-11-20 Reaction chamber of an epitaxial reactor

Publications (2)

Publication Number Publication Date
CN102224277A CN102224277A (zh) 2011-10-19
CN102224277B true CN102224277B (zh) 2014-03-12

Family

ID=41112787

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980146751.1A Active CN102224277B (zh) 2008-11-24 2009-11-20 外延反应器的反应室

Country Status (6)

Country Link
US (1) US20110229378A1 (enExample)
EP (1) EP2367964B1 (enExample)
JP (1) JP5600324B2 (enExample)
CN (1) CN102224277B (enExample)
IT (1) IT1392068B1 (enExample)
WO (1) WO2010058269A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108411362B (zh) * 2017-02-09 2020-03-31 北京北方华创微电子装备有限公司 腔室及外延生长设备
IT201900000223A1 (it) * 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1188823A (zh) * 1996-11-04 1998-07-29 通用电气公司 半导体圆片的热处理器
CN1224085A (zh) * 1998-12-25 1999-07-28 清华大学 超高真空化学气相淀积外延系统
CN101101859A (zh) * 2006-07-07 2008-01-09 东京毅力科创株式会社 立式热处理装置及其使用方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097622A (ja) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd エピタキシヤル装置
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
EP0147967B1 (en) * 1983-12-09 1992-08-26 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
CA2082819C (en) * 1990-05-18 2001-10-02 Bp Chemicals (Hitco) Inc. Materials for chemical vapor deposition processes
DE4338807C1 (de) 1993-11-12 1995-01-26 Heraeus Quarzglas Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6666924B1 (en) * 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
JP4374156B2 (ja) * 2000-09-01 2009-12-02 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
EP1380412A4 (en) * 2001-03-08 2005-03-30 Shinetsu Handotai Kk HEAT-FINISHING MATERIAL AND MATERIAL-USING HEATING DEVICE
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
US7563512B2 (en) * 2004-08-23 2009-07-21 Heraeus Quarzglas Gmbh & Co. Kg Component with a reflector layer and method for producing the same
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
WO2006038228A1 (en) * 2004-10-01 2006-04-13 Lpe Spa Epitaxial reactor cooling method and reactor cooled thereby
ITMI20051308A1 (it) * 2005-07-11 2007-01-12 Milano Politecnico Metodo e reattore per crescere cristalli
JP5117856B2 (ja) * 2005-08-05 2013-01-16 株式会社日立国際電気 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
DE102006052512A1 (de) * 2006-11-06 2008-05-08 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung von opakem Quarzglas, nach dem Verfahren erhaltenes Halbzeug sowie daraus hergestelltes Bauteil
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1188823A (zh) * 1996-11-04 1998-07-29 通用电气公司 半导体圆片的热处理器
CN1224085A (zh) * 1998-12-25 1999-07-28 清华大学 超高真空化学气相淀积外延系统
CN101101859A (zh) * 2006-07-07 2008-01-09 东京毅力科创株式会社 立式热处理装置及其使用方法

Also Published As

Publication number Publication date
US20110229378A1 (en) 2011-09-22
WO2010058269A1 (en) 2010-05-27
IT1392068B1 (it) 2012-02-09
ITMI20082092A1 (it) 2010-05-25
EP2367964A1 (en) 2011-09-28
CN102224277A (zh) 2011-10-19
EP2367964B1 (en) 2014-04-30
JP2012510151A (ja) 2012-04-26
JP5600324B2 (ja) 2014-10-01

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