CN102222637A - Preparation method of germanium substrate on insulator - Google Patents

Preparation method of germanium substrate on insulator Download PDF

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CN102222637A
CN102222637A CN2011101709558A CN201110170955A CN102222637A CN 102222637 A CN102222637 A CN 102222637A CN 2011101709558 A CN2011101709558 A CN 2011101709558A CN 201110170955 A CN201110170955 A CN 201110170955A CN 102222637 A CN102222637 A CN 102222637A
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sio
substrate
geoi
bonding
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黄如
林猛
安霞
张兴
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Peking University
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Peking University
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Abstract

The invention provides a preparation method of a GeOI substrate on an insulator, belonging to the field of novel semiconductor material. The preparation method of a GeOI substrate comprises the following steps: while preparing the GeOI substrate, SiO2 with injected fluorine ions is adopted to realize the passivating treatment of germanium and buried oxygen layer interface; therefore, the density of interface state is reduced, and the preparation method is beneficial to improving the back interface quality of GeOI substrate. Moreover, the dielectric constant of the buried oxygen layer is decreased, and the preparation method is beneficial to inhibiting the short channel effect of GeOI MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device.

Description

A kind of preparation method of germanium on insulator substrate
Technical field
The invention belongs to the novel semiconductor material devices field, be specifically related to a kind of germanium on insulator (GeOI) substrate preparation technology.
Background technology
Integrated circuit technique is being followed Moore's Law and is being developed more than 40 year, is faced with the dual test of transistor size physics limit and technological limit by the method that reduces device geometries raising operating rate.In order to continue to improve the operating rate of device, just need to adopt new material and device architecture.Germanium material is because its high carrier mobility (under the normal temperature, electron mobility is 2.4 times of silicon, and hole mobility is 4 times of silicon) is considered to the very potential candidate material of following cmos device.Therefore, the Ge base device becomes one of international research focus in recent years.In addition, " on the insulator (On Insulator) " structure, owing to advantage such as have a little less than being coupled between little and source/leakages of the living electric capacity of good grid-control system ability, source/omit, and be considered to make one of small size device preferred structure.Therefore, combine germanium on insulator (GeOI) substrate that germanium raceway groove high carrier mobility advantage and " on the insulator (On Insulator) " structure effectively suppress the short-channel effect advantage, be considered to make the preferred structure of high speed small size MOSFET.
The method of making the GeOI substrate at present mainly contains two kinds: smart peeling (Smart Cut TM) method and the germanium method of assembling (Ge condensation).No matter but be the GeOI substrate that smart peeling or germanium are assembled preparation, all there is a common shortcoming, be exactly the interface of the germanium film on upper strata and oxygen buried layer (back of the body interface) quality is too poor, there are a large amount of dangling bonds, interface state density is very high.
Summary of the invention
In view of the relatively poor problem of present GeOI substrate back of the body interface quality, the invention provides a kind of GeOI substrate fabrication method.This method can realize the Passivation Treatment at back of the body interface is significantly improved back of the body interface quality in preparation GeOI substrate process synchronously, and reduces and bury the dielectric constant of oxide layer, helps suppressing the short-channel effect of GeOI MOSFET device.
GeOI substrate fabrication method provided by the invention, implementation step is as follows:
1) provides semiconductor Germanium substrate and silicon substrate respectively, germanium substrate and silicon substrate are carried out necessary cleaning;
2) natural oxidizing layer of removal germanium substrate and surface of silicon;
3) deposit one deck SiO on the germanium substrate 2, as oxygen buried layer;
4) at SiO 2Last deposit one deck Si xN y
5) to SiO 2(fluorine ion passes Si to middle injection fluorine ion xN y);
6) at Si xN yLast deposit one deck is used for the SiO of bonding 2
7) growth one deck is used for the SiO of bonding on silicon substrate 2
8) to Si xN yLast SiO 2With the SiO on the silicon substrate 2Do surface activation and handle, and two substrates are aimed at bonding along activated surface;
9) bonding after annealing;
10) the germanium substrate is carried out attenuate;
Cleaning step to the germanium substrate in the described step 1) can be organic washing, hydrochloric acid cleaning etc., and purpose is that the organic and inorganic pollution on the germanium substrate, metallic particles etc. are removed, but is not limited to above-mentioned cleaning method; Cleaning step to silicon substrate is that No. 1 standard cleaning liquid cleans, and No. 2 standard cleaning liquid cleans, and with the pollutants such as particle, organic substance and metal on the removal silicon substrate, but is not limited to above-mentioned cleaning method;
Described step 2) removes the method that germanium substrate natural oxidizing layer can adopt HF, HCl solution to soak in, also can adopt the method for high-temperature vacuum annealing, but be not limited to the method for above-mentioned removal germanium natural oxidizing layer; For the natural oxide of removing surface of silicon, can adopt the method for HF, the immersion of BOE solution, but be not limited to the method for above-mentioned removal silicon natural oxidizing layer;
Deposit SiO in the described step 3) 2Method APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged, but be not limited to above-mentioned deposit SiO 2Method;
Si in the described step 4) xN yCan pass through method deposits such as APCVD, LPCVD, PECVD, ALD, PLD and sputter, but be not limited to above-mentioned deposit Si xN yMethod, this layer Si xN yEffect: a) fluorine ion is injected into SiO for follow-up 2In, with this layer Si xN yMake resilient coating, avoid fluorine ion is directly beaten at SiO 2On, cause serious lattice damage; B) stop and be injected into SiO 2In fluorine ion in follow-up bonding or annealing process, spread from SiO 2Layer;
The fluorine ion energy that injects in the described step 5) will enough pass Si xN y, arrive SiO 2Layer;
Deposit SiO in the described step 6) 2Method APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged, but be not limited to above-mentioned deposit SiO 2Method;
SiO grows in the described step 7) 2Method thermal oxidation, APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged, but be not limited to above-mentioned growth SiO 2Method;
The surface activation processing can be a hydrophilic treated in the described step 8), also can be N 2Or H 2Plasma activate to handle, but be not limited to the method that above-mentioned surface activation is handled; The method of bonding has Direct Bonding, anode linkage, but is not limited to the method for above-mentioned bonding;
Annealing in the described step 9) can be at N 2, H 2, NH 3, carry out in the atmosphere such as Ar, but be not limited to above-mentioned annealing atmosphere, the purpose of annealing is to make SiO 2Bonding gets more firm, and makes and be injected into SiO 2In fluorine ion be diffused into germanium substrate and oxygen buried layer (SiO 2) at the interface,, reduce interface state density with passivation back of the body interface dangling bonds, improve back of the body interface quality;
Attenuate in the described step 10) can be by the method for chemico-mechanical polishing (CMP), also can be by carrying out smart peeling earlier, again to carrying out the method for chemico-mechanical polishing.If will carry out smart peeling earlier, will in bonding forward direction germanium substrate, inject H +, and need behind bonding, peel off.
The present invention is at the GeOI of preparation qualitatively: the GeOI substrate of assembling preparation with traditional smart peeling or germanium is compared, and has following advantage:
A) realized the Passivation Treatment at germanium and oxygen buried layer interface in preparation GeOI substrate, the minimizing interface state density helps improving the back of the body interface quality of GeOI substrate.This is owing to be injected into SiO 2In fluorine ion, some can in subsequent anneal technology, be diffused into germanium and oxygen buried layer at the interface, realize carrying on the back the passivation of interface dangling bonds;
B) help strengthening the ability that suppresses short-channel effect based on the MOSFET for preparing on the GeOI substrate, this is owing to be injected into SiO 2In fluorine ion can make part Si O 2Become SiO xF y, can reduce oxygen buried layer (SiO 2) dielectric constant.
Description of drawings
Fig. 1 is a GeOI substrate fabrication method flow chart of the present invention;
Fig. 2 is a GeOI substrate preparation embodiment schematic diagram of the present invention, among the figure: 1-germanium substrate; The 2-silicon substrate; Deposit SiO on the 3-germanium substrate 24-Si xN y5-injects the SiO of fluorine ion 26-Si xN yThe SiO of last deposit 2Deposit SiO on the 7-silicon substrate 28-Si xN yOn SiO 2With SiO on the silicon substrate 2SiO 2Binder course; Germanium substrate behind the 9-attenuate.
Specific embodiments
Step 1. is selected semiconductor Germanium substrate and silicon substrate, shown in Fig. 2 (a).Respectively germanium substrate and silicon substrate are cleaned.At first the germanium substrate is carried out organic washing, clean with acetone and alcohol immersion successively, rinse well with DI water again, remove greasy dirt and organic pollution on the germanium substrate.Clean with hydrochloric acid again, in watery hydrochloric acid, heat and boil, rinse well with DI water subsequently, remove inorganic pollution, metallic particles etc.; Earlier with No. 1 cleaning fluid (NH 4OH: H 2O 2: H 2O=1: 1: 5～1: 2: 7) silicon substrate is cleaned, clean up with deionized water then, remove particle and organic substance on the substrate.Use cleaning fluid (HCl: H again No. 2 2O 2: H 2O=1: 1: 6～1: 2: 8) cleans, clean up with deionized water more afterwards, remove the metallic pollution on the substrate;
Step 2. is removed the natural oxide of germanium substrate and surface of silicon.For the method that the natural oxide of removing the germanium substrate surface can adopt HF, HCl solution to soak, also can adopt the method for high-temperature vacuum annealing.The method that the HF solution that this enforcement preference is soaks.Detailed process is as follows: earlier with the HF (HF: H that dilutes 2O=1: 5～1: 60) solution soaked 10～50 seconds, with DI water flushing 10～50 seconds, so circulated 5～15 times again; For the method that the natural oxide of removing surface of silicon can adopt HF, BOE solution to soak, the method that this enforcement preference soaks for HF solution.HF (HF: H with dilution 2O=1: 5～1: 60) solution soaked 10～50 seconds, with DI water flushing 10～50 seconds, so circulated 5～15 times again;
Step 3. is deposit one deck SiO on the germanium substrate that cleaned 2Deposit SiO 2Method APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged, this enforcement preference is that method deposit one layer thickness of APCVD is the SiO of 10nm～500nm 2, this enforcement preference is 50nm, shown in Fig. 2 (b);
Step 4. is at SiO 2Last deposit one deck Si xN y, deposit Si xN yMethod APCVD, LPCVD, PECVD, ALD, PLD and sputter etc. are arranged, this enforcement preference is PECVD.Under 250～500 ℃, the method for using PECVD is at SiO 2The Si of last deposit 5～500nm xN y, this enforcement preference is 10nm, shown in Fig. 2 (c);
Step 5. is to SiO 2(fluorine ion passes Si to middle injection fluorine ion xN y), shown in Fig. 2 (d).The energy that injects fluorine ion is 5keV～100keV, injects energy according to the SiO on the germanium substrate 2And Si xN yThe layer thickness and decide, this enforcement preference is 25keV; Implantation dosage is 1 * 10 12～1 * 10 17Em -2, this enforcement preference is 1 * 10 15Em -2
Step 6. is at Si xN yLast deposit one deck is used for the SiO of bonding 2Deposit SiO 2Method APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged.This enforcement preference is the method with PECVD.Deposit SiO 2Thickness be 5nm～500nm, this enforcement preference is 10nm, shown in Fig. 2 (e);
Step 7. one deck of growing on silicon substrate is used for the SiO of bonding 2Growth SiO 2Method thermal oxidation, APCVD, LPCVD, PECVD, ALD, PLD etc. are arranged.This enforcement preference is the SiO that grows with the method for thermal oxidation on silicon substrate 2Growth SiO 2Thickness be 20nm～500nm, this enforcement preference is 100nm, shown in Fig. 2 (f);
Under step 8. room temperature, to the SiO of silicon substrate 2And Si xN yOn SiO 2Do surface activation and handle, the method for activation has hydrophilic treated, N 2Or H 2Plasma treatment, this enforcement preference is N 2Plasma treatment, with the plasma treatment 10～30s of nitrogen; With the SiO on the silicon substrate 2And Si xN yOn SiO 2Bonding, the method for bonding has Direct Bonding, anode linkage, and this enforcement preference is a Direct Bonding.Bonding 5～20h in 300～700 ℃ vacuum, this enforcement preference are bonding 10h in 400 ℃ vacuum, make Si xN yOn SiO 2With SiO on the silicon substrate 2Be combined into one deck SiO 2, shown in Fig. 2 (g);
Step 9. bonding after annealing.At N 2, H 2, NH 3, anneal in the atmosphere such as Ar, but be not limited to above-mentioned annealing atmosphere.This enforcement preference is H 2Atmosphere is at 400 ℃～700 ℃ H 230min～the 24h that anneals in the atmosphere makes SiO 2In fluorine be diffused into germanium and oxygen buried layer at the interface, realize passivation to back of the body interface dangling bonds, improve back of the body interface quality.This enforcement preference is the H at 400 ℃ 2The 1h that anneals in the atmosphere is shown in Fig. 2 (h);
Step 10. pair germanium carries out attenuate.Attenuate can be by the method for chemico-mechanical polishing (CMP), also can be by carrying out smart peeling earlier, again to carrying out the method for chemico-mechanical polishing.If will carry out smart peeling earlier, will in bonding forward direction germanium substrate, inject H +, and need behind bonding, peel off.This enforcement preference is a method of directly using the CMP attenuate, and the thickness of the final germanium that obtains is 20nm～1um, and this enforcement preference is 200nm, shown in Fig. 2 (i).
More than describe the preparation method of a kind of GeOI substrate proposed by the invention in detail by preferred embodiment, those skilled in the art is to be understood that, the above only is the preferred embodiments of the present invention, in the scope that does not break away from essence of the present invention, can use other reaction material to realize germanium on insulator of the present invention (GeOI) substrate, its preparation method also is not limited to disclosed content among the embodiment, all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.

Claims (10)

1. GeOI substrate fabrication method, its step comprises:
1) respectively germanium substrate and silicon substrate are carried out necessary cleaning;
2) natural oxidizing layer of removal germanium substrate and surface of silicon;
3) deposit one deck SiO on the germanium substrate 2, as oxygen buried layer;
4) at SiO 2Last deposit one deck Si xN y
5) to SiO 2The middle fluorine ion that injects;
6) at Si xN yLast deposit one deck is used for the SiO of bonding 2
7) growth one deck is used for the SiO of bonding on silicon substrate 2
8) to Si xN yLast SiO 2With the SiO on the silicon substrate 2Do surface activation and handle, and two substrates are aimed at bonding along activated surface;
9) bonding after annealing;
10) the germanium substrate is carried out attenuate.
2. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, the cleaning step to the germanium substrate in the described step 1) is that organic washing, hydrochloric acid clean; Cleaning step to silicon substrate is that No. 1 standard cleaning liquid cleans or No. 2 standard cleaning liquid cleanings.
3. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, described step 2) the middle method that germanium substrate natural oxidizing layer adopts HF, HCl solution to soak, the method that also can adopt high-temperature vacuum to anneal removed; For the natural oxide of removing surface of silicon, the method that adopts HF or BOE solution to soak.
4. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, deposit SiO in described step 3) or the step 6) 2Method APCVD, LPCVD, PECVD, ALD or PLD are arranged.
5. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, the Si in the described step 4) xN yBe by APCVD, LPCVD, PECVD, ALD, PLD or sputtering method deposit.
6. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, the fluorine ion energy that injects in the described step 5) is 5keV～100keV.
7. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, SiO grows in the described step 7) 2Method thermal oxidation, APCVD, LPCVD, PECVD, ALD or PLD are arranged.
8. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, the surface activation processing is a hydrophilic treated in the described step 8), or N 2Or H 2Plasma activate to handle, the method for bonding has Direct Bonding or anode linkage.
9. GeOI substrate fabrication method as claimed in claim 1 is characterized in that the annealing in the described step 9) behind the bonding is at N 2, H 2, NH 3, carry out in the atmosphere such as Ar.
10. GeOI substrate fabrication method as claimed in claim 1 is characterized in that, the attenuate in the described step 10) is the method that adopts chemico-mechanical polishing, or adopts and carry out smart peeling, the method for carrying out chemico-mechanical polishing more earlier.
CN2011101709558A 2011-06-23 2011-06-23 Preparation method of germanium substrate on insulator Pending CN102222637A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610553A (en) * 2012-03-20 2012-07-25 北京大学 Preparation method for Ge-on-insulator substrate
CN104217925A (en) * 2013-06-05 2014-12-17 中国科学院微电子研究所 Method for reducing positive charge density in silicon-on-insulator (SOI) buried oxide layer
CN115070515A (en) * 2022-06-20 2022-09-20 长春长光圆辰微电子技术有限公司 Method for reducing CMP large area edge peeling in GOI production

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CN101329999A (en) * 2007-06-20 2008-12-24 株式会社半导体能源研究所 Semiconductor substrate and method for manufacturing the same
CN101838812A (en) * 2010-01-07 2010-09-22 南京大学 Method for cleaning surface of passivated Ge substrate
CN102047410A (en) * 2008-05-26 2011-05-04 原子能和代替能源委员会 Nitrogen-plasma surface treatment in a direct bonding method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163218A (en) * 1996-11-28 1998-06-19 Nkk Corp Semiconductor substrate and its manufacture
US20020019105A1 (en) * 1999-07-19 2002-02-14 Mitsubishi Denki Kabushiki Kaisha SOI substrate and semiconductor device
CN101290876A (en) * 2007-04-20 2008-10-22 株式会社半导体能源研究所 Method of manufacturing soi substrate
CN101329999A (en) * 2007-06-20 2008-12-24 株式会社半导体能源研究所 Semiconductor substrate and method for manufacturing the same
CN102047410A (en) * 2008-05-26 2011-05-04 原子能和代替能源委员会 Nitrogen-plasma surface treatment in a direct bonding method
CN101838812A (en) * 2010-01-07 2010-09-22 南京大学 Method for cleaning surface of passivated Ge substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610553A (en) * 2012-03-20 2012-07-25 北京大学 Preparation method for Ge-on-insulator substrate
CN104217925A (en) * 2013-06-05 2014-12-17 中国科学院微电子研究所 Method for reducing positive charge density in silicon-on-insulator (SOI) buried oxide layer
CN104217925B (en) * 2013-06-05 2017-07-18 中国科学院微电子研究所 Method for reducing positive charge density in silicon-on-insulator (SOI) buried oxide layer
CN115070515A (en) * 2022-06-20 2022-09-20 长春长光圆辰微电子技术有限公司 Method for reducing CMP large area edge peeling in GOI production

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Application publication date: 20111019