CN102047410A - Nitrogen-plasma surface treatment in a direct bonding method - Google Patents
Nitrogen-plasma surface treatment in a direct bonding method Download PDFInfo
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- CN102047410A CN102047410A CN2009801193831A CN200980119383A CN102047410A CN 102047410 A CN102047410 A CN 102047410A CN 2009801193831 A CN2009801193831 A CN 2009801193831A CN 200980119383 A CN200980119383 A CN 200980119383A CN 102047410 A CN102047410 A CN 102047410A
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- 238000004381 surface treatment Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 27
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 61
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 16
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000004913 activation Effects 0.000 description 11
- 238000001994 activation Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000002950 deficient Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005661 hydrophobic surface Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 239000012528 membrane Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 101000580353 Rhea americana Rheacalcin-1 Proteins 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000006385 ozonation reaction Methods 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Sampling And Sample Adjustment (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Two wafers, each having on a surface thereof a thin silicon or silicon oxide film, are bonded by subjecting the thin film of at least one wafer to a surface treatment forming a thin silicon oxynitride surface film with a thickness of less than 5 nm. The thin film is formed by means of a nitrogen-based plasma, generated by an inductively coupled plasma source. In addition, the potential difference between the plasma and a substrate holder supporting said wafer, during the surface treatment, is less than 50 V, advantageously less than 15 V and preferably zero. This makes it possible to obtain a defect-free bonding interface irrespective of the temperature of any heat treatment carried out after the contacting step.
Description
Technical field
The present invention relates to direct combination (bonding) method that two each comfortable its surfaces comprise the plate of silicon or thin layer of silicon oxide.
Background technology
Adhere to or directly be based on direct contact between two surfaces by molecule, and do not use special material for example adhesive, wax, low melting glass metal etc. in conjunction with the principle of carrying out combination.The surface that is designed to contact can be hydrophilic or hydrophobic.
Hydrophobic surface can for example be the Free Surface of the oxygen-free silicon of two silicon wafers (or base material), and water-wetted surface can for example be the Free Surface of each self-contained thin layer of silicon oxide of two silicon wafers.
The molecule associated methods requires also to treat that the surface of combination is fully smooth, do not have particle or pollutant, present suitable surface chemistry with each other fully near contacting so that can cause.In this case, the attraction between two surfaces is high enough to cause the molecule combination.
Cohesive process carries out after the chemically cleaning on surface usually at ambient temperature and under ambient pressure.Yet, usually carry out follow-up heat treatment, for example heat treatment under about 1000 ℃ temperature is to strengthen binding energy.Yet in very a large amount of application, the heat treatment step under such temperature is unallowable.
Do not need to have proposed the associated methods of high-temperature heat treatment.They generally include activation step.
For example, P.Amirfeiz etc. have studied activation that silicon, silica and crystalline quartz carry out by oxygen plasma or by argon plasma to realizing the influence of direct combination at ambient temperature in article " Formation of Silicon structures by plasma-activated wafer bonding " (Journal of the Electrochemical Society, 147 (7) 2693-2698).In conjunction with the structure that passes through the activation of oxygen plasma or argon plasma present the high surface energy that can compare with the surface energy that the integrated structure body of heat-treating after activating and contacting in the wet method by routine before the combination is obtained under high temperature (600 ℃～800 ℃).Be exposed to oxygen plasma or argon plasma by RIE/ICP (reactive ion etching/inductively coupled plasma) type equipment.
Article " Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO at T.Suni etc.
2" in (Journal of the Electrochemical Society; 149 (6) G348-G651 (2002)), reactive ion etching pattern (being also referred to as RIE) is united use to carry out the low temperature bond of silicon wafer with the activation of being undertaken by nitrogen, argon or oxygen plasma.Between pot-life, between silicon wafer and ground connection (ground), record the polarizing voltage that between 125V and 280V, changes.The existence of this voltage causes the acceleration and these charged species bombardment to wafer surface of the charged species of plasma towards the direction of described wafer.In addition, after activation processing and before combination, at RCA-1 type solution (NH
3: H
2O
2: H
2O, 70 ℃) in and/or in deionized water clean wafer, and be dried.After they contact, the structure of combination was heat-treated under 100 ℃ temperature 2 hours.Results reported shows in this article, is higher than the surface energy of the structure of direct combination after chemically cleaning according to the surface energy that comprises the structure that method formerly and the plasma treatment step reactive ion etching coupling combines.
In patent US5503704, by the combination on two surfaces of following acquisition: form nitride layer so that this surface is hydrophilic and is reactive at low temperatures on the surface in two surfaces.When surfacing is a material based on non-nitrogen, when for example being silicon, by the standard clean of RCA type, with washed with de-ionized water and dry after carry out NH
3Plasma enhanced chemical vapor deposition (PECVD) and form nitride layer.The material of handling and reactive surface hydrophilic with another contacted, wholely then under about 300 ℃ temperature, heat-treat.
Though above-mentioned activating technology makes it possible to obtain the low temperature bond method that cohesive energy (cohesion energies) equates with the cohesive energy of high temperature bond method at least, they do not make it possible to obtain flawless molecule combination interface.Especially, patent US5503704 has mentioned in the base material by Si
3N
4The existence of the defective that the deposition of film produces.
Summary of the invention
The purpose of this invention is to provide the method that two each comfortable its surfaces is comprised the direct combination of plate of silica or silicon thin layer, so that can obtain and the mating surface of comparing the defective that presents remarkable minimizing quantity according to the associated methods of prior art, advantageously obtain flawless surface, no matter particularly be applied to the temperature how (be included in especially ambient temperature and 1300 ℃ between) on the formed structure of the plate that closes by two agllutinations.
According to the present invention, this purpose realizes by claims.Especially, this purpose realizes by the following fact: before the contact procedure of two boards thin layer separately, by produce by inductively-coupled plasma sources based on the plasma of nitrogen and between the base material supporter (substrate holder) of described plasma and the described plate of support less than the electrical potential difference of 50V in the presence of, thin layer at least one block of plate carries out single surface treatment step, and this surface treatment step forms the silicon oxynitride surface film that has less than the thickness of 5nm.
Description of drawings
By the following description of the specific embodiment of the present invention, it is clearer distinct that other advantage and feature will become, and the specific embodiment of the present invention just provides the purpose that is used for non-limitative example and shown in the drawings, wherein:
-Fig. 1 represents different step according to the embodiment of associated methods of the present invention with block diagram form.
-Fig. 2～4 schematically show the different step of making the integrated structure body according to the embodiment shown in Fig. 1 with cross section.
-Fig. 5 and 6 is illustrated respectively in the integrated structure body by two silicon wafers that obtain according to the embodiment of combination of the present invention with by the associated methods according to prior art, at ambient temperature, and Δ ρ/ρ
SiVariation with depth z.
-Fig. 7 is illustrated in according to the silicon oxynitride film that forms in the specific embodiment of the present invention infrared spectrum at ambient temperature and the silicon oxide film infrared spectrum at ambient temperature that forms with the associated methods according to prior art.
Embodiment
According to the embodiment shown in Fig. 1～4, by carrying out the following step in succession with two silicon substrates 1 and 1 ' (being also referred to as silicon wafer) combination:
-step F 1 forms thin layer of silicon oxide 2 and 2 ' on the surface of base material 1 and 1 ' by wet method thus;
-surface treatment step F2, at least a portion of the thin layer of silicon oxide that it will form in step F 1 before is converted into silicon oxynitride surface film 3 and 3 '; With
-step F 3, it makes two base materials 1 contact with 1 '.
Each skin layer 2 and 2 ' formation are advantageously carried out by following: carry out CARO type cleaning, carry out RCA type cleaning subsequently, RCA type cleaning comprises the phase I of SC1 type and the second stage of SC2 type.The CARO cleaning is to be called the acid bath (H of CARO
2SO
4+ H
2O
2) in cleaning.The phase I (SC1 or standard clean 1) of RCA cleaning and second stage (SC2 or standard clean 2) are respectively by alkaline solution NH for example
4OH+H
2O
2+ H
2O cleans and passes through for example HCl+H of strong oxidizer
2O
2+ H
2O cleans.The thin layer of silicon oxide 2 and 2 ' of Xing Chenging presents such advantage thus: do not have defective.In this stage of described method, the surface that each base material 1 and 1 ' the Free Surface by silicon oxide layer 2 and 2 ' form thereby be hydrophilic.
As shown in Fig. 1 and 3, between cleaning F1 and the step F 3 that base material 1 and 1 ' is contacted, handle the one step F2 on described surface, it is also referred to as activation step.This makes it possible in the thin layer of silicon oxide 2 and 2 ' of each base material 1 and 1 ' to form thickness less than 5nm with advantageously be the silicon oxynitride surface film 3 and 3 ' of about 2nm.
For this reason, thin layer of silicon oxide 2 of each base material 1 and 1 ' and 2 ' Free Surface are exposed to the nitrogen plasma that is produced by inductively-coupled plasma sources (being also referred to as ICP) with one step.
Base material 1 and 1 ' can be simultaneously or successive exposure in nitrogen plasma.Under latter event, two base materials 1 and 1 ' the surface treatment condition that is experienced can be identical or different.In addition, one or more base materials 1 and 1 ' are exposed to nitrogen plasma and can one or more steps carry out.
Nitrogen plasma is meant pure nitrogen plasma.Yet, on meaning more generally, the plasma that base material 2 and 2 ' is exposed to it also can be based on the plasma of nitrogen, promptly, such plasma, its reactant gas is a nitrogen, and its carrier gas of not getting rid of residual volume is the possibility that exists in this plasma of argon gas or other gas for example.Especially, other gas can little amount be present in the plasma based on nitrogen, as long as they do not hinder the formation of silicon oxynitride surface film.Plasma can for example contain oxygen, hydrogen and/or water.The concentration of the gas that these are other is several approximately percentages, more particularly less than 5%.
Usually, the silicon oxynitride surface film can contain a spot of chemical species for example hydrogen or oxygen.Therefore, the general formula of silicon oxynitride advantageously is Si
zO
xN
yH
wThese chemical species can residual mode be present in the surface treatment chamber, perhaps introduce with the form of the gas in the plasma, perhaps are present in the horizontal plane place of treated surface film in addition.
In Fig. 3 and 4, thin layer of silicon oxide 2 and 2 ' oxynitriding (oxynitridation) are parts.So the thickness of surface film 3 and 3 ' is less than the original depth of thin layer of silicon oxide 2 and 2 '.Yet hi an alternative embodiment, at least one thin layer of silicon oxide 2 and/or 2 ' oxynitriding can be completely.In addition, the silicon below the part also can be consumed during this step.Therefore, base material 1 and 1 ' be positioned at thin layer of silicon oxide 2 and 2 ' below a part of silicon also can be converted into silicon oxynitride.
In addition, the electrical potential difference between plasma and the base material supporter is little.Its especially less than 50V, advantageously less than 15V, be zero or almost nil more particularly.This electrical potential difference especially corresponding to especially less than 50eV, advantageously less than 15eV, be zero or almost nil charged species energy more particularly at wafer-level face place.Therefore nitrogen plasma or do not quicken towards the surface of pending one or more base materials based on the charged species of the plasma of nitrogen.
According to the present invention, the formation of silicon oxynitride surface film is carried out with the surface treatment step of single weak point by single plasma (based on the plasma of nitrogen).Yet this step makes it possible to obtain the oxynitride film of thickness less than 5nm really,, not only contains the film that nitrogen and silicon also contain aerobic that is.The oxygen that exists in the surface film formed according to the present invention can be derived from some contained in the plasma based on nitrogen oxygen especially and/or can be present in the oxygen in the following thin layer and/or be used for carrying out the residual oxygen of the chamber of surface treatment step.Therefore, according to surface film of the present invention not article " the Formation of Silicon on plasma synthesized SiO of picture Ming Zhu etc.
xN
yAnd reaction mechanism " form with two steps of forming by nitrogenize (being undertaken by nitrogen plasma) and oxidation (for example being undertaken by oxygen plasma) respectively in succession like that in (Applied Surface Science 243 (2005) 89-95).This makes it possible to obtain meticulous silicon oxynitride, and this silicon oxynitride presents and has good electron character and the surface of good nitrogenize and interface silicon.Yet, in the article of Ming Zhu etc., propose to make thickness and replace the buried oxide (buried oxide) of silicon-on-insulator (SOI) base material and improve the dissipation of heat by this base material for the silicon oxynitride of about 80nm.
In addition, by select between plasma and the base material supporter less than 50V, advantageously less than 15V, be preferably zero electrical potential difference, the defects count that the combination interface place occurs significantly reduces or even is zero.
At last, the step F shown in Fig. 13 is to make two surface films 3 directly to contact with 3 ' Free Surface.But this step original position is carried out, that is, carry out therein carrying out in the surface-treated chamber of step F 2, and perhaps this step can be offed normal and be carried out.This step F 3 can further directly be carried out after step F 2, that is, between two step F 2 and F3 without any intermediate steps.Hi an alternative embodiment, can between step F 2 and F3, carry out one or more intermediate steps, for example to remove during the step F 2 or the particle that after step F 2, may deposit or any pollutant (metallic or hydrocarbon etc.).These intermediate steps can for example comprise surface treatment step, and are that described surface treatment step can be chemical or be the conventional step of using in the microelectronics field.For example, base material 1 and 1 ' with surface film 3 and 3 ' can be immersed in million auxiliary (megasonic-assisted) chemical baths or not have during million assistant chemicals bathe, perhaps can make their experience one or many brushes wipe (brushing) operation, heat treatment and/or the one or many ultraviolet radiation/ozone treatment of one or many in controlled atmosphere.
In the execution mode shown in Fig. 1～4, carry out the combination of two bulk silicon base materials by forming silicon oxynitride surface film 3 and 3 ' on two base materials surface separately.Yet associated methods according to the present invention is not limited to the execution mode shown in Fig. 1～4.
Especially, in the embodiment shown in Fig. 1～4, by wet method, particularly form the silicon oxide surface thin layer on the surface of base material 1 and 1 ' by the wet cleaning step.Yet at least one in the silicon oxide surface thin layer can form by other technology independent or combination.It can for example form by thermal oxidation.It also can form by depositing for example chemical vapor deposition (CVD), ion beam sputtering (IBS) or depositing (ICP) by inductively coupled plasma.It also can be intrinsic (native) thin layer of silicon oxide, for example the intrinsic thin layer of silicon oxide of handling or passing through UV radiation-ozone treatment or produce by ozonization water treatment by RCA.The contact of two blocks of base materials or two wafers can be thus for example realizes with the combination of following initial silica content skin layer:
-the SiO that obtains by wet method
2Be combined in the SiO that obtains by wet method
2On,
-intrinsic SiO
2Be combined in the SiO that obtains by wet method
2On,
-intrinsic SiO
2Be combined in intrinsic SiO
2On,
-Re (thermal) SiO
2(for example thickness is about 2.5nm～about 1 micron thin layer) is combined in the SiO that obtains by wet method
2On and
-Re SiO
2(for example thickness is the thin layer of about 2.5nm～about 25nm) is combined in intrinsic SiO
2On,
-Re SiO
2(for example thickness is the thin layer of about 2.5nm～about 25nm) is combined in hot SiO
2On (for example thickness is the thin layer of about 2.5nm～about 25nm).
In addition, in conjunction with also can be by only promptly forming single silicon oxynitride surface film and realize in 1 surface at one of two silicon substrates.In this case, before contact procedure, be designed to another base material 1 ' of contacting with the silicon oxynitride surface film 2 of base material 1 the surface can to make it be hydrophilic by producing the silicon oxide surface thin layer, it is hydrophobic perhaps can making it.
In fact, although the execution mode shown in Fig. 1～4 be two water-wetted surface combinations, be to use the direct combination of the activation of being undertaken by plasma also can utilize at least one hydrophobic surface to carry out based on nitrogen.Therefore when only forming single silicon oxynitride surface film on the surface of one of two blocks of base materials, hydrophobic surface can be the Free Surface that does not carry out in the base material based on a base material of the plasma-activated step of nitrogen.Hydrophobic surface also can be to be designed to carry out based on the base material of the plasma-activated step of nitrogen or one of at least Free Surface wherein.In this case, being exposed to what produced by inductively-coupled plasma sources is the not siliceous surface of base material based on the plasma of nitrogen.In addition, in this case, a small amount of oxygen or the water that for example are present in the plasma or are present in the frame structure in residual mode be essential for producing oxygen silicon nitride membrane on the surface of silicon substrate.In both cases can be by carrying out CARO cleaning, RCA cleaning and making that with the cleaning of the hydrofluoric acid (HF) of liquid or steam form silicon face is hydrophobic.This last cleaning stage is then removed the silicon oxide layer that produces when carrying out CARO and RCA cleaning.
At last, not necessarily to need be the bulk silicon base material to base material.Therefore, hi an alternative embodiment, the plate that described at least base material can be comprised one of at least silicon thin layer and/or thin layer of silicon oxide in its surface replaces.For example, described plate can be by the semi-conducting material different with silicon, and particularly germanium forms, and formed or formed by metal by glass, and this plate comprises silicon or thin layer of silicon oxide in its surface.The thickness of silicon or thin layer of silicon oxide is preferably several nanometers to several microns.For example, the germanium base material can comprise thickness in its surface and is 3～5mm, advantageously is the silicon of 3mm and/or thin layer of silicon oxide.
In all cases, in case made base material (or plate) contact, the combination interface that is formed by at least one silicon oxynitride surface film just presents and the defective of comparing remarkable smaller amounts according to the associated methods of prior art.Combination interface advantageously is not have defective.Especially, combination interface does not contain any bubble.And, even when the structure of combination from ambient temperature under being up to any temperature of 1300 ℃ during experience heat treatment, this interface also keeps good quality in time.
When the operating condition of activation step (step F 2 among Fig. 1) made it possible to obtain to present the silicon oxynitride film of following character, the quality of combination interface was further improved:
The atomic percentage of-nitrogen surpasses several percentages (for example 5%), surpasses 15% especially, preferably surpasses 30%, and less than 65%, more particularly less than 50%,
-corresponding to value
The maximum of electron denseization in the thickness range of this layer greater than 10%, be preferably greater than 15%, even more preferably greater than 18%, wherein ρ represents the electron density of silicon oxynitride, ρ
SiRepresent the electron density of silicon,
-thickness is greater than 0.1nm, advantageously more than or equal to 1nm,
--the low-down surface and the volumetric concentration of OH key,
--the sizable surface and the volumetric concentration of NH key.
In order to obtain to have the silicon oxynitride surface film of above character, the operating condition of carrying out activation step by nitrogen plasma is advantageously as follows:
-one or more base material is placed the ICP chamber.
Pressure before the-surface treatment in the chamber preferably is lower than 10
-3Millitorr (mT), promptly about 0.1333mPa.
-be less than or equal to 40mT (promptly about 5.33Pa), advantageously carrying out the plasma-activated very short time under the nitrogen partial pressure of about 5mT (promptly about 0.66Pa).Therefore, the nitrogen partial pressure during the surface treatment preferably is less than or equal to 6Pa, advantageously is less than or equal to 1Pa.In addition, the surface-treated time advantageously is less than 5 minutes, preferably is less than 2 minutes.It is 30 seconds～90 seconds especially.
-design advantageously is higher than ambient temperature in order to the temperature of the base material supporter that supports one or more pending base material.Therefore the base material supporter can remain under the fixed temperature that is in 150 ℃～350 ℃ scopes.
-inductively-coupled plasma sources comprises radio-frequency power generator, and it has the power that can be several hectowatt, preferred 500W～800W.
In order to describe, using the thickness that initially presents hydrophilic Free Surface (angle of wetting of water droplet＜5 °) is that 750 microns and diameter are tested as the silicon substrate of 200mm.Embodiment 1～7 during its some operating conditions are listed in the table below is therefore separately corresponding to not only experiencing cleaning before the contact but also experiencing cohesive process between two blocks of base materials of the exposure in the nitrogen plasma that is produced under various conditions by the ICP source.
Wherein carry out the equipment of surface-treated chamber of embodiment 1～7 for selling with trade name AMAT Centura DPS+ by Applied Materials.And, for all embodiment 1～7, listed operating condition below using:
Electrical potential difference between-base material supporter and the ground connection: zero
Pressure before the-plasma-activated step in the chamber: 10
-3MT
Nitrogen partial pressure during the-plasma-activated step: 5mT
Nitrogen flow during the-plasma-activated step: 100sccm
Before plasma-activated step, use Caro cleaning and the cleaning of RCA subsequently (SC1 and SC2) to clean all base materials.The base material of embodiment 4 carries out hydrofluoric acid treatment on the other hand subsequently to obtain hydrophobic surface and to remove the oxide on surface.Those of other surface treatment condition among the embodiment 4 and embodiment 1 are identical.Those of embodiment 2 and 3 operating condition and embodiment 1 are identical, and except base material was exposed to the time of nitrogen plasma, it was 60 seconds in embodiment 1, was 30 seconds in embodiment 2, was 90 seconds in embodiment 3.Those of the operating condition of embodiment 5 and embodiment 1 are identical, and except the power of radio freqnency generator, it is 500W in embodiment 5, is 800W in embodiment 1.Those of embodiment 6 and 7 operating condition and embodiment 1 are identical, and except the temperature of base material supporter, this temperature is 250 ℃ in embodiment 1, is 150 ℃ in embodiment 6, is 350 ℃ in embodiment 7.
By different analytical technologies for example X ray light emission energy spectrometry (X-ray photoelectron spectroscopy, XPS), X ray reflection rate (XRR), fourier transform infrared spectroscopy (FTIR) and scanning acoustic microscope method (SAM) to the surface film that forms in the base material with characterize at the combination interface that two base materials are obtained after contacting.
The difference analysis of being carried out has confirmed the existence of the silicon oxide film of nitrogenize.The composition of the film that obtains in embodiment 1～4 characterizes by the X ray light emission energy spectrometry (XPS) that combines with plasma process chamber.The measurement that the base material of handling according to embodiment 1 is carried out shows at Si stable aspect the time
48N
38O
14The existence of film (only most of species Si, O and N being quantized).For embodiment 4, measurement result also shows at Si stable aspect the time
48N
45O
7The existence of film.
The analysis of being undertaken by high-resolution X-ray reflectivity (HR-XRR) makes it possible to determine that the silicon oxynitride film of each base material of embodiment 1 and 2 has the thickness of about 2nm.Also can be observed, compare the increase of the electron density of the film that during being exposed to nitrogen plasma, forms with the density of silicon.For example, the maximum Δ ρ/ρ of the film that in embodiment 1, forms
SiValue is at least 18%, and in embodiment 2, it is at least 20%.This increase of electron density is illustrated in Fig. 5 and 6 especially, Fig. 5 and 6 corresponding to two silicon substrates wherein respectively by the Δ ρ/ρ in the integrated structure body that obtains according to the associated methods of embodiment 1 with by associated methods according to prior art
SiWith the variation of depth z, described associated methods according to prior art comprises with those identical conditions that are used for cleaning of embodiment 1 but does not carry out plasma-activated step.By article " High-energy x-ray reflectivity of buried interfaces created by wafer bonding " (Physical review B as F.Rieutord etc., Volume 63,125408) in the report X ray reflection rate (XRR) electron gain density value ρ and relation curve and the electron density value ρ under different temperatures and the relation curve of the degree of depth of the degree of depth.Fig. 5 also makes it possible to measure the thickness of each film.
And, for all films that form according to embodiment 1～7, the analysis of being undertaken by scanning acoustic microscope method (lateral resolution for approximately the SAM of ± 30 μ m) makes it possible to observe that there is not any defective (not having bubble) in two combination interfaces in conjunction with base material and be stable aspect the temperature, though in conjunction with after any annealing that can carry out temperature how, this temperature particularly from ambient temperature to being up in 1300 ℃ the temperature range.
Observe all films of making according to embodiment 1～7 by the FTIR-MIR spectroscopic methodology and do not exist-OH surface and volume key, and existence-N-H key.For example, Fig. 7 is illustrated among the embodiment 1 silicon oxynitride film that the forms FTIR spectrum (curve A) at ambient temperature and the FTIR spectrum (curve B) of the silicon oxide film that forms during according to the associated methods (under the clean conditions of embodiment 1, but activating without nitrogen plasma) of prior art.
Therefore, by the electrical potential difference between wherein said plasma and described base material supporter and the ground connection low or even advantageously be that the activation that zero the nitrogen plasma with the control of ICP pattern carries out is such process for treating surface, can obtain the combination that does not present any binding deficient in conjunction with the after annealing temperature range wide by this process for treating surface.
The activation of being undertaken by the nitrogen plasma with the control of ICP pattern has been used to make oxygen silicon nitride membrane in other field.For example, article " Mechanism of Plasma Nitridation of Silicon Dioxide Employing Surface-Wave and Inductively Coupled Plasma Sources " (the Japanese Journal of Applied Physics of Hideo Kitagawa etc., Vol 46, n ° of 8A, 2007, pp5304～5312) report uses this surface treatment to be manufactured in the mosfet transistor oxygen silicon nitride membrane as gate-dielectric.
On the other hand, according to the present invention, such surface treatment is used in the cohesive process of two boards, and by with low between itself and base material supporter and the plasma or be zero electrical potential difference associating, in conjunction with the after annealing temperature how it make it possible to significantly improve the ratio of defects (no matter, not having defective) of combination interface.Especially, this improvement is to obtain for a few tenths of at least nanometer and less than the silicon oxynitride surface film of 5nm by producing at least one thickness, and this makes it possible to improve the electron density (electron denseization) in the plate subsurface.
And, according to associated methods of the present invention advantageously in combination (conjointly) be applied to such method, this method is used to make (bonded) silicon-on-insulator (SOI) base material of combination and is included in the gas ion implantation steps that make before the contact of two blocks of base materials.Such method is also referred to as " SmartCut
TM", be described among European patent application EP-A-0533551.Also can be applied to be called BESOI in combination (correspondingly according to associated methods of the present invention, BSOI) method, BESOI (correspondingly, BSOI) expression " combination and the silicon-on-insulator (Bond-and Etch-Back Silicon on Insulator) that eat-backs " (correspondingly, " silicon-on-insulator of combination (Bonded Silicon on Insulator) "), can for example on buried oxide layer, make laminated structure thus with single crystalline layer.
Claims (14)
1. the method that two each comfortable its surfaces is comprised the direct combination of plate of the thin layer that constitutes by silica or silicon, it is characterized in that, before the contact procedure between the described two boards thin layer separately, by produce by inductively-coupled plasma sources based on the plasma of nitrogen and between the base material supporter of described plasma and the described plate of support less than the electrical potential difference of 50V in the presence of, thin layer at least one block of plate carries out single surface treatment step, and this surface treatment step forms the silicon oxynitride surface film that has less than the thickness of 5nm.
2. the method for claim 1 is characterized in that, described electrical potential difference is less than 15V.
3. the method for claim 2 is characterized in that, described electrical potential difference is zero.
4. each method in the claim 1～3 is characterized in that, the described surface-treated time is less than 5 minutes.
5. the method for claim 5 is characterized in that, the described surface-treated time is 30 seconds～90 seconds.
6. each method in the claim 1～5 is characterized in that, during described surface treatment, described base material supporter is remained on 150 ℃～350 ℃ temperature.
7. each method in the claim 1～6 is characterized in that, the nitrogen partial pressure during described surface treatment is less than or equal to 6Pa.
8. the method for claim 7 is characterized in that, the nitrogen partial pressure during described surface treatment is less than or equal to 1Pa.
9. each method in the claim 1～8 is characterized in that, the thin layer that is made of silica of at least one block of plate is the intrinsic thin layer of silicon oxide.
10. each method in the claim 1～8 is characterized in that, the thin layer that is made of silica of at least one block of plate forms by wet method.
11. each method is characterized in that in the claim 1～8, the thin layer that is made of silica of a plate forms by thermal oxidation.
12. each method is characterized in that in the claim 1～8, the thin layer that is made of silica of a plate forms by deposition.
13. each method is characterized in that in the claim 1～12, at least one block of plate is to form by the semiconductor substrate that comprises the thin layer that is made of silica or silicon on its surface.
14. the method for claim 13 is characterized in that, described semiconductor substrate is based on germanium.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0802833A FR2931585B1 (en) | 2008-05-26 | 2008-05-26 | NITROGEN PLASMA SURFACE TREATMENT IN A DIRECT COLLECTION PROCESS |
| FR0802833 | 2008-05-26 | ||
| PCT/FR2009/000502 WO2009153422A1 (en) | 2008-05-26 | 2009-04-28 | Nitrogen-plasma surface treatment in a direct bonding method |
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| Publication Number | Publication Date |
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| CN102047410A true CN102047410A (en) | 2011-05-04 |
| CN102047410B CN102047410B (en) | 2014-03-26 |
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| CN200980119383.1A Expired - Fee Related CN102047410B (en) | 2008-05-26 | 2009-04-28 | Nitrogen-plasma surface treatment in a direct bonding method |
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| US (1) | US8318586B2 (en) |
| EP (1) | EP2304787B1 (en) |
| JP (1) | JP5661612B2 (en) |
| KR (1) | KR101453135B1 (en) |
| CN (1) | CN102047410B (en) |
| AT (1) | ATE529891T1 (en) |
| FR (1) | FR2931585B1 (en) |
| WO (1) | WO2009153422A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222637A (en) * | 2011-06-23 | 2011-10-19 | 北京大学 | Preparation method of germanium substrate on insulator |
| CN106409650A (en) * | 2015-08-03 | 2017-02-15 | 沈阳硅基科技有限公司 | Silicon-wafer direct bonding method |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2964112B1 (en) * | 2010-08-31 | 2013-07-19 | Commissariat Energie Atomique | TREATMENT BEFORE BONDING A CU-OXIDE MIXED SURFACE BY PLASMA CONTAINING NITROGEN AND HYDROGEN |
| US9589801B2 (en) | 2011-10-31 | 2017-03-07 | Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization |
| KR20130141985A (en) * | 2012-06-18 | 2013-12-27 | 삼성전자주식회사 | Method of bonding two surfaces and structure manufactured by the same |
| KR102023623B1 (en) * | 2012-07-03 | 2019-09-23 | 삼성전자 주식회사 | Methods of Fabricating Semiconductor Devices |
| US9418963B2 (en) | 2012-09-25 | 2016-08-16 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Methods for wafer bonding, and for nucleating bonding nanophases |
| KR102182791B1 (en) | 2013-09-25 | 2020-11-26 | 에베 그룹 에. 탈너 게엠베하 | Apparatus and method for bonding substrates |
| KR102287811B1 (en) * | 2014-10-31 | 2021-08-09 | 삼성전자주식회사 | Method of bonding two surfaces and construct therefrom and microfluidic device containing the construct |
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| US9496239B1 (en) * | 2015-12-11 | 2016-11-15 | International Business Machines Corporation | Nitride-enriched oxide-to-oxide 3D wafer bonding |
| US10026716B2 (en) * | 2016-04-15 | 2018-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC formation with dies bonded to formed RDLs |
| US9716088B1 (en) | 2016-06-30 | 2017-07-25 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded capacitor |
| US9941241B2 (en) * | 2016-06-30 | 2018-04-10 | International Business Machines Corporation | Method for wafer-wafer bonding |
| US9620479B1 (en) | 2016-06-30 | 2017-04-11 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded resistor |
| US9773741B1 (en) | 2016-08-17 | 2017-09-26 | Qualcomm Incorporated | Bondable device including a hydrophilic layer |
| US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
| FR3074959B1 (en) * | 2017-12-08 | 2019-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | DIRECT ADHESION BONDING PROCESS |
| US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
| US10859981B1 (en) | 2019-10-21 | 2020-12-08 | Quantum Valley Ideas Laboratories | Vapor cells having one or more optical windows bonded to a dielectric body |
| US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
| US20220320035A1 (en) * | 2021-03-31 | 2022-10-06 | Invensas Bonding Technologies, Inc. | Direct bonding methods and structures |
| US11307233B1 (en) | 2021-04-13 | 2022-04-19 | Quantum Valley Ideas Laboratories | Vapor cells having stacks of layers defining target three-dimensional volumes for internal cavities |
| FR3131434B1 (en) * | 2021-12-29 | 2023-12-15 | Commissariat Energie Atomique | Process for activating an exposed layer |
| CN116022731B (en) * | 2023-02-17 | 2023-07-07 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Manufacturing method of MEMS fluxgate sensor based on WLP (wafer level packaging) process |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
| US5503704A (en) * | 1993-01-06 | 1996-04-02 | The Regents Of The University Of California | Nitrogen based low temperature direct bonding |
| JP3294934B2 (en) * | 1994-03-11 | 2002-06-24 | キヤノン株式会社 | Method for manufacturing semiconductor substrate and semiconductor substrate |
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| WO2002084725A1 (en) * | 2001-04-17 | 2002-10-24 | California Institute Of Technology | A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby |
| US6780788B2 (en) * | 2002-08-07 | 2004-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for improving within-wafer uniformity of gate oxide |
| JP3980539B2 (en) * | 2003-08-29 | 2007-09-26 | 唯知 須賀 | Substrate bonding method, irradiation method, and substrate bonding apparatus |
| EP1662549B1 (en) * | 2003-09-01 | 2015-07-29 | SUMCO Corporation | Method for manufacturing bonded wafer |
| FR2867310B1 (en) * | 2004-03-05 | 2006-05-26 | Soitec Silicon On Insulator | TECHNIQUE FOR IMPROVING THE QUALITY OF A THIN LAYER TAKEN |
| US7361572B2 (en) * | 2005-02-17 | 2008-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | STI liner modification method |
| FR2888663B1 (en) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | METHOD OF REDUCING THE ROUGHNESS OF A THICK LAYER OF INSULATION |
| FR2910177B1 (en) * | 2006-12-18 | 2009-04-03 | Soitec Silicon On Insulator | LAYER VERY FINE ENTERREE |
| JP2009135430A (en) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
-
2008
- 2008-05-26 FR FR0802833A patent/FR2931585B1/en not_active Expired - Fee Related
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- 2009-04-28 EP EP09765984A patent/EP2304787B1/en active Active
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222637A (en) * | 2011-06-23 | 2011-10-19 | 北京大学 | Preparation method of germanium substrate on insulator |
| CN106409650A (en) * | 2015-08-03 | 2017-02-15 | 沈阳硅基科技有限公司 | Silicon-wafer direct bonding method |
| CN106409650B (en) * | 2015-08-03 | 2019-01-29 | 沈阳硅基科技有限公司 | A kind of silicon chip directive bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2304787B1 (en) | 2011-10-19 |
| US8318586B2 (en) | 2012-11-27 |
| CN102047410B (en) | 2014-03-26 |
| FR2931585B1 (en) | 2010-09-03 |
| WO2009153422A8 (en) | 2010-12-23 |
| ATE529891T1 (en) | 2011-11-15 |
| KR20110010740A (en) | 2011-02-07 |
| EP2304787A1 (en) | 2011-04-06 |
| WO2009153422A1 (en) | 2009-12-23 |
| US20110129986A1 (en) | 2011-06-02 |
| JP2011523784A (en) | 2011-08-18 |
| JP5661612B2 (en) | 2015-01-28 |
| KR101453135B1 (en) | 2014-10-27 |
| FR2931585A1 (en) | 2009-11-27 |
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