CN104217925A - Method for lowering positive charge density of buried oxide of SOI (silicon on insulator) material - Google Patents

Method for lowering positive charge density of buried oxide of SOI (silicon on insulator) material Download PDF

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Publication number
CN104217925A
CN104217925A CN201310220544.4A CN201310220544A CN104217925A CN 104217925 A CN104217925 A CN 104217925A CN 201310220544 A CN201310220544 A CN 201310220544A CN 104217925 A CN104217925 A CN 104217925A
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buried layer
oxygen buried
positive charge
charge density
soi
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CN104217925B (en
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郑中山
于芳
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Ruili Flat Core Microelectronics Guangzhou Co Ltd
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Institute of Microelectronics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology

Abstract

The invention belongs to the technical field of semiconductor technology and integrated circuit manufacturing and discloses a method for lowering positive charge density of buried oxide of an SOI (silicon on insulator) material. The method includes: performing buried oxide fluorine filling on the SOI material by means of ion implantation, and annealing the SOI material after fluorine filling. According to the positive charge density, the fluorine filling dose is selected between 1*10<14>cm<-2> and 1*10<17>cm<-2>, and the corresponding annealing temperature ranges from 800 DEG C to 1100 DEG C. By the method, the problem of increase of the positive charge density in the buried oxide of the material when the SOI material is modified by means of ion implantation is solved; besides, the method has the advantages of high practicality, simpleness, easiness in implementation and the like in the aspects of technology optimization of the modified SOI material, improvement of electrical properties of the buried oxide of the material and the like.

Description

A kind of method that reduces positive charge density in silicon-on-insulator material oxygen buried layer
Technical field
The invention belongs to semiconductor technology and ic manufacturing technology field, relate to the method for positive charge density in a kind of effective reduction silicon-on-insulator (SOI) material oxygen buried layer.
Background technology
That integrated circuit based on SOI technology has is low in energy consumption, speed fast, integration density advantages of higher, thereby obtains developing rapidly and increasingly extensive application.The advantage of SOI circuit derives from the unique texture that SOI material oxygen buried layer is isolated top layer device and substrate completely.Particularly, the existence of oxygen buried layer has reduced the interface area of device, has strengthened the ability of circuit anti event of single particle upset (SEU), makes SOI become the preferred material of making anti-SEU circuit.Yet, the existence of oxygen buried layer has also reduced the level of circuit anti-integral dose radiation, compare with body silicon circuit, SOI circuit is more responsive to integral dose radiation, and this is because in SOI field-effect transistor (MOSFET), because a parasitic back of the body raceway groove has been introduced in the existence of oxygen buried layer, under radiation environment, when the radiation damage of oxygen buried layer acquires a certain degree, parasitic back of the body raceway groove will be opened, cause SOI circuit leakage current to increase, even disabler.
In addition, with respect to the circuit based on part depletion (PD) SOI technology, entirely exhaust (FD) SOI circuit and there is more excellent electric property and more outstanding anti-SEU ability.But the electric coupling problem because FD SOI MOSFET exists positive grid and back-gated transistor, causes the radiation damage remote-effects of oxygen buried layer to the threshold voltage of positive gate transistor, so it is also more responsive than PDSOI MOSFET to integral dose radiation.Especially, for the less sub-micro FDSOI MOSFET of current threshold voltage, less threshold voltage shift just may cause device leakage electric current compared with leap ahead.So, the impact bringing to positive gate transistor in order to suppress the drift of back-gated transistor threshold voltage under radiation environment, and avoid parasitic unlatching of carrying on the back raceway groove, must carry out anti-integral dose radiation reinforced to the oxygen buried layer of SOI material.
At present, conventional and effective SOI oxygen buried layer reinforcement means is that certain dopant of doses is injected in oxygen buried layer in Implantation mode, and SOI material is carried out to modification, and then improves the anti-integral dose radiation ability of oxygen buried layer.Yet, when oxygen buried layer being reinforced in Implantation mode, tend to some electrical properties of oxygen buried layer to have a negative impact, and can directly have influence on the electric property of device.Wherein, the most remarkable on the impact of device with the rising of positive charge density in oxygen buried layer.Because the positive charge density raising in oxygen buried layer will cause the variation of back-gated transistor threshold voltage, and may cause the Leakage Current of n channel SOI MOSFET to increase.
In the time of for illustrative material modification, may cause the rising of positive charge density in oxygen buried layer, Fig. 1 has provided high frequency capacitance-voltage (C-V) characteristic curve of SOI oxygen buried layer note nitrogen front and back corresponding Metal-oxide-semicondutor (MOS) electric capacity.By Fig. 1, can be seen, with respect to the C-V curve before buried regions note nitrogen, there is larger negative sense drift along transverse axis in the C-V curve after buried regions note nitrogen.Theoretical according to mos capacitance C-V, this means that the note nitrogen that oxygen buried layer is carried out has caused the obvious rising of positive charge density in buried regions.Therefore, when in Implantation mode, SOI material being carried out to modification, and while being attended by the rising of positive charge density in oxygen buried layer, so, take certain technology effectively to reduce the positive charge density in oxygen buried layer, when reaching modification object, reduce its harmful effect that device and circuit are caused and just become particularly important.
A method that reduces positive charge density in modification SOI material buried regions is to reduce the dosage of Implantation, but when implantation dosage is limited, also limited the flexibility of SOI material being carried out to ion implantation modification, make it to be difficult in the larger context material modification technique to be optimized, cause and can not give full play to the effect of Implantation in SOI material modification.
Summary of the invention
(1) technical problem that will solve
In view of this, the object of the invention is to provide the method for positive charge density in a kind of SOI of reduction material oxygen buried layer, the problem that in the material oxygen buried layer causing while SOI material being carried out to modification to solve by Implantation mode, positive charge density raises.
(2) technical scheme
For achieving the above object, the invention provides the method for positive charge density in a kind of SOI of reduction material oxygen buried layer, the method is, in Implantation mode, SOI material is carried out to oxygen buried layer note fluorine, and after note fluorine, SOI material is annealed.
In such scheme, described SOI material comprises oxygen buried layer is carried out to the SOI material after modification by any way, and the original SOI material that needs or wish further to reduce oxygen buried layer positive charge density.
In such scheme, described SOI material is carried out to oxygen buried layer note fluorine, the dosage of note fluorine according to the size of positive charge density in oxygen buried layer 1 * 10 14cm -2～1 * 10 17cm -2in scope, choose.
In such scheme, describedly at note, SOI material is annealed after fluorine, annealing region is 800 ℃～1100 ℃, and annealing time scope is 0.5 hour～3 hours, and annealing atmosphere is nitrogen or inert gas.
(3) beneficial effect
From technique scheme, can find out, the present invention has following beneficial effect:
1, the method for positive charge density in reduction SOI material oxygen buried layer provided by the invention, to reducing the SOI material of positive charge density in oxygen buried layer, in Implantation mode, in its oxygen buried layer, inject the auxiliary element fluorine that can make oxygen buried layer positive charge density reduce, to suppress, because material being carried out to the rising of the former thereby oxygen buried layer positive charge density that causes of the modification etc. of certain aspect, having solved the problem of positive charge density rising in the material oxygen buried layer causing while SOI material being carried out to modification by Implantation mode.
2, the method for positive charge density in reduction SOI material oxygen buried layer provided by the invention, the oxygen buried layer of take note fluorine is feature, can effectively reduce the rising of positive charge density in the material oxygen buried layer because SOI material modification is brought, both realized SOI material had been carried out to modification, and made again material oxygen buried layer after modification there is the object of good electrical character.Meanwhile, widened the process conditions of material being carried out to modification, made material modification can carry out in the larger context the optimization of associated process conditions, to obtain better modified effect.
Although 3 have mentioned in background technology of the present invention the dopant implant modification SOI material that carries out radiation hardened for oxygen buried layer, but because of the independence of oxygen buried layer note fluorine in role aspect minimizing oxygen buried layer positive charge density, make its modification or original SOI material for other any needs or hope reduction oxygen buried layer positive charge density effective too, therefore, the method of positive charge density in reduction SOI material oxygen buried layer provided by the invention, applied widely, and method simple practical, be easy to realize.
4, the method for positive charge density in reduction SOI material oxygen buried layer provided by the invention, in the oxygen buried layer positive charge density rising problem of bringing in the modification of the above-mentioned SOI material dopant implant of solution, the original SOI material that needs is further reduced to initial positive charge density in oxygen buried layer also can be effective equally.
5, the method for positive charge density in reduction SOI material oxygen buried layer provided by the invention, only need the fluorine of doses be injected in the oxygen buried layer of material under certain energy, and inject accordingly after annealing and process, can effectively reduce the positive charge density in oxygen buried layer.
Accompanying drawing explanation
Fig. 1 is corresponding mos capacitance high frequency C-V characteristic before and after SOI material oxygen buried layer note nitrogen; In figure, VG represent grid voltage (unit: V), C/C bOXrepresent normalization electric capacity, BOX footmark acute pyogenic infection of finger tip oxygen buried layer wherein (lower same); In figure, see, there is larger negative sense drift in the C-V curve after oxygen buried layer note nitrogen before noting nitrogen, thereby demonstrate the obvious rising of positive charge density in note nitrogen oxygen buried layer;
Fig. 2 is the high frequency C-V characteristic of oxygen buried layer corresponding mos capacitance before and after note fluorine of note nitrogen modification SOI material; Note nitrogen modification oxygen buried layer is after note fluorine, and significant positive excursion has occurred its corresponding C-V curve, thereby demonstrates the remarkable decline of positive charge density in modification oxygen buried layer;
Fig. 3 is corresponding mos capacitance high frequency C-V characteristic before and after SOI material oxygen buried layer note fluorine; There is obvious positive excursion in the C-V curve after oxygen buried layer note fluorine, thereby demonstrate the obvious reduction of positive charge density in note fluorine oxygen buried layer before noting fluorine, and note fluorine dosage is larger, and the degree of reduction is also larger.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention is to reducing the SOI material of oxygen buried layer positive charge density and note fluorine and annealing reaches the object of effective reduction oxygen buried layer positive charge density in Implantation mode.The main points of its technical scheme are: the sign of first SOI material being carried out oxygen buried layer positive charge density, then according to the thickness of the result after characterizing and top material layer silicon fiml and oxygen buried layer, select implantation dosage and the energy of fluorine, fluorine is injected in the oxygen buried layer of material, and carries out annealing in process subsequently.
Particularly, in this reduction SOI material oxygen buried layer provided by the invention, the method for positive charge density, is, in Implantation mode, SOI material is carried out to oxygen buried layer note fluorine, and after note fluorine, SOI material is annealed.Wherein, described SOI material comprises oxygen buried layer is carried out to the SOI material after modification by any way, and the original SOI material that needs or wish further to reduce oxygen buried layer positive charge density.Described SOI material is carried out to oxygen buried layer note fluorine, the dosage of note fluorine according to the size of positive charge density in oxygen buried layer 1 * 10 14cm -2～1 * 10 17cm -2in scope, choose.Describedly at note, SOI material is annealed after fluorine, annealing region is 800 ℃～1100 ℃, and annealing time scope is 0.5 hour～3 hours, and annealing atmosphere is nitrogen or inert gas.
The method of positive charge density in this reduction SOI material oxygen buried layer provided by the invention, specifically comprises the following steps:
Step 1: adopt C-V characterizing method or other technological means, carry out the sign of positive charge density in oxygen buried layer to reducing the SOI material of positive charge density in oxygen buried layer, to determine the value of positive charge density in oxygen buried layer;
Step 2: according to the thickness of the value of positive charge density and the oxygen buried layer of material and top layer silicon in the material oxygen buried layer providing after characterizing, determine dosage and the energy of note fluorine, then, fluorine is injected in the oxygen buried layer of material, and carries out annealing in process;
Step 3: the structural parameters based on current typical SOI material, the value according to generally the interior positive charge density of oxygen buried layer may reach, provides the basic reference conditions of note fluorine technique as shown in the table.In table, Q frepresent positive charge density, T sirepresent top layer silicon thickness, T bOXrepresent oxygen buried layer thickness, D frepresent note fluorine dosage, E frepresent note fluorine energy.
In such scheme, the SOI material that need to reduce positive charge density in oxygen buried layer can be the material after ion implantation modification, also can be other because preparation technology or special processing technique etc. are former thereby cause the SOI material that in oxygen buried layer, positive charge density rises, can also be the SOI materials that need further to reduce the initial positive charge density of oxygen buried layer.According to the height of positive charge density in SOI material oxygen buried layer, note accordingly fluorine dosage and be generally chosen at 1 * 10 14cm -2～1 * 10 17cm -2in scope.Positive charge density in oxygen buried layer is higher, also must corresponding raising for the note fluorine dosage of oxygen buried layer, and effectively to reduce the positive charge density in oxygen buried layer.The energy of note fluorine need be selected according to the thickness of SOI top material layer silicon and oxygen buried layer, to guarantee to inject the peak value that in rear oxygen buried layer, fluorine distributes, is in oxygen buried layer.Annealing after note fluorine can be carried out under nitrogen or inert gas shielding, and annealing temperature is typically chosen between 800 ℃～1100 ℃, and annealing time is generally within the scope of 0.5 hour～3 hours.
Embodiment 1:
To oxygen buried layer thickness, be that the SOI material that 150nm, top silicon surface thickness are 190nm carries out the note nitrogen modification of oxygen buried layer.The dosage of note nitrogen is 10 16cm -2, energy is 90keV.Through C-V, characterize and find, the positive charge density in note nitrogen oxygen buried layer obviously raises.For reducing the positive charge density in note nitrogen oxygen buried layer, in the note nitrogen modification oxygen buried layer of this material, note fluorine, its note fluorine dosage is 5 * 10 15cm -2.According to the thickness of oxygen buried layer and top layer silicon, the energy of note fluorine is chosen as 120keV.Annealing temperature after note fluorine is 900 ℃, and annealing time is 2 hours, and annealing atmosphere is nitrogen.As shown in Figure 2, there is positive excursion by a relatively large margin in the corresponding High Frequency C-V curve of note nitrogen modification oxygen buried layer after note fluorine before noting fluorine, and the positive charge density in the note nitrogen modification oxygen buried layer that meaning is shown loving care for after fluorine has obtained remarkable reduction.
Embodiment 2:
To oxygen buried layer thickness, it is the SOI material that 375nm, top silicon surface thickness are 220nm, for further reducing the positive charge density in its oxygen buried layer, according to the thickness of its oxygen buried layer and top silicon surface, under the Implantation Energy of 140keV, its oxygen buried layer is noted to fluorine, the dosage of note fluorine is respectively 1 * 10 15cm -2with 4 * 10 15cm -2, the annealing temperature after note fluorine is 900 ℃, and annealing time is 0.5 hour, and annealing atmosphere is nitrogen.As shown in Figure 3, the High Frequency C-V curve that after note fluorine, oxygen buried layer is corresponding has had obvious positive excursion before noting fluorine, and note fluorine dosage is higher, and drift value is also larger, the meaning positive charge density in oxygen buried layer after fluorine of showwing loving care for has obvious reduction, and can adjust by note fluorine dosage the degree of its reduction.
From above-described embodiment, can find out, the method of positive charge density in this reduction SOI material oxygen buried layer provided by the invention, the method that the oxygen buried layer of take note fluorine is feature, can effectively reduce the rising of positive charge density in the material oxygen buried layer because SOI material modification is brought, both realized SOI material had been carried out to modification, and made again material oxygen buried layer after modification there is the object of good electrical character.Meanwhile, widened the process conditions of material being carried out to modification, made material modification can carry out in the larger context the optimization of associated process conditions, to obtain better modified effect.Although technical background of the present invention is to carry out the dopant implant modification SOI material of radiation hardened for oxygen buried layer, but because of the independence of oxygen buried layer note fluorine in role aspect minimizing oxygen buried layer positive charge density, make its modification or original SOI material for other any needs or hope reduction oxygen buried layer positive charge density effective too, therefore, applied widely, and method simple practical, is easy to realize.
Specifically, the method of positive charge density in this reduction SOI material oxygen buried layer provided by the invention, to reducing the SOI material of positive charge density in oxygen buried layer, in Implantation mode, in its oxygen buried layer, inject the auxiliary element that can make oxygen buried layer positive charge density reduce, to suppress because material being carried out to the rising of the former thereby oxygen buried layer positive charge density that causes of the modification etc. of certain aspect, both reached SOI material was carried out to modification, and made again material oxygen buried layer after modification there is the object of good electrical character.Except the SOI material of modification, the present invention needs the SOI material that further reduces positive charge density in oxygen buried layer to be suitable for too for other.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (4)

1. a method that reduces positive charge density in silicon-on-insulator material oxygen buried layer, is characterized in that, the method is, in Implantation mode, silicon-on-insulator SOI material is carried out to oxygen buried layer note fluorine, and after note fluorine, SOI material is annealed.
2. the method for positive charge density in reduction silicon-on-insulator material oxygen buried layer according to claim 1, it is characterized in that, described SOI material comprises oxygen buried layer is carried out to the SOI material after modification by any way, and the original SOI material that needs or wish further to reduce oxygen buried layer positive charge density.
3. the method for positive charge density in reduction silicon-on-insulator material oxygen buried layer according to claim 1, is characterized in that, described silicon-on-insulator SOI material is carried out to oxygen buried layer note fluorine, the dosage of note fluorine according to the size of positive charge density in oxygen buried layer 1 * 10 14cm -2～1 * 10 17cm -2in scope, choose.
4. the method for positive charge density in reduction silicon-on-insulator material oxygen buried layer according to claim 1, it is characterized in that, describedly at note, SOI material is annealed after fluorine, annealing region is 800 ℃～1100 ℃, annealing time scope is 0.5 hour～3 hours, and annealing atmosphere is nitrogen or inert gas.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249026B1 (en) * 1999-06-01 2001-06-19 Mitsubishi Denki Kabushiki Kaisha MOS Transistor with a buried oxide film containing fluorine
CN1845308A (en) * 2006-03-17 2006-10-11 中国科学院上海微系统与信息技术研究所 Hardening method for improving MOS device field total dose
CN102222637A (en) * 2011-06-23 2011-10-19 北京大学 Preparation method of germanium substrate on insulator
CN102522362A (en) * 2011-12-14 2012-06-27 中国科学院微电子研究所 Method for improving anti-irradiation performance of SOI (Silicon On Insulator) structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249026B1 (en) * 1999-06-01 2001-06-19 Mitsubishi Denki Kabushiki Kaisha MOS Transistor with a buried oxide film containing fluorine
CN1845308A (en) * 2006-03-17 2006-10-11 中国科学院上海微系统与信息技术研究所 Hardening method for improving MOS device field total dose
CN102222637A (en) * 2011-06-23 2011-10-19 北京大学 Preparation method of germanium substrate on insulator
CN102522362A (en) * 2011-12-14 2012-06-27 中国科学院微电子研究所 Method for improving anti-irradiation performance of SOI (Silicon On Insulator) structure

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