CN102208907B - 校正电路、驱动电路、发光器件和电流脉冲波形的校正方法 - Google Patents

校正电路、驱动电路、发光器件和电流脉冲波形的校正方法 Download PDF

Info

Publication number
CN102208907B
CN102208907B CN201110071814.0A CN201110071814A CN102208907B CN 102208907 B CN102208907 B CN 102208907B CN 201110071814 A CN201110071814 A CN 201110071814A CN 102208907 B CN102208907 B CN 102208907B
Authority
CN
China
Prior art keywords
time constant
circuit
current
emitting device
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110071814.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102208907A (zh
Inventor
前田修
汤胁武志
大尾桂久
兴边孝一
仲埜博文
荒木田孝博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102208907A publication Critical patent/CN102208907A/zh
Application granted granted Critical
Publication of CN102208907B publication Critical patent/CN102208907B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201110071814.0A 2010-03-31 2011-03-24 校正电路、驱动电路、发光器件和电流脉冲波形的校正方法 Active CN102208907B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP083267/10 2010-03-31
JP2010083267A JP5651983B2 (ja) 2010-03-31 2010-03-31 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

Publications (2)

Publication Number Publication Date
CN102208907A CN102208907A (zh) 2011-10-05
CN102208907B true CN102208907B (zh) 2016-05-25

Family

ID=44697592

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110071814.0A Active CN102208907B (zh) 2010-03-31 2011-03-24 校正电路、驱动电路、发光器件和电流脉冲波形的校正方法

Country Status (4)

Country Link
US (1) US8829813B2 (https=)
JP (1) JP5651983B2 (https=)
KR (1) KR101691672B1 (https=)
CN (1) CN102208907B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置
JP5949411B2 (ja) * 2012-10-04 2016-07-06 ソニー株式会社 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5855058B2 (ja) * 2012-10-29 2016-02-09 キヤノン株式会社 画像形成装置
JP6335643B2 (ja) * 2014-05-23 2018-05-30 キヤノン株式会社 画像形成装置
RU2696335C2 (ru) * 2014-12-19 2019-08-01 Конинклейке Филипс Н.В. Модуль лазерного датчика
JP6561006B2 (ja) 2016-03-29 2019-08-14 株式会社日立エルジーデータストレージ 映像表示装置
US10833477B2 (en) 2016-11-28 2020-11-10 Sony Semiconductor Solutions Corporation Drive unit and light-emitting device
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置
DE112019005741T5 (de) 2018-11-16 2021-07-29 Sony Semiconductor Solutions Corporation Verfahren zur ansteuerung eines oberflächenemissionslasers undoberflächenemissionslaservorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086643A (zh) * 2006-06-09 2007-12-12 佳能株式会社 光学扫描设备
CN101482911A (zh) * 2009-01-22 2009-07-15 中国科学院等离子体物理研究所 可变积分时间常数的积分器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626421B2 (ja) * 1987-02-25 1994-04-06 富士写真フイルム株式会社 半導体レ−ザのドル−プ補正装置
JP2642121B2 (ja) * 1988-02-10 1997-08-20 株式会社リコー 半導体レーザー出力制御装置
JP2917333B2 (ja) * 1989-11-30 1999-07-12 日本電気株式会社 光送信方法及び光送信装置
US5065401A (en) * 1991-02-26 1991-11-12 Spectra Diode Laboratories, Inc. Pulse jitter reduction method for a laser diode or array
JP2000138415A (ja) * 1998-11-02 2000-05-16 Fujikura Ltd 半導体レーザ駆動回路
DE10063707A1 (de) * 2000-12-20 2002-07-04 Heidelberger Druckmasch Ag Verfahren zur thermischen Stabilisierung einer Laserdiode in einem Recorder
JP2002237650A (ja) * 2001-02-09 2002-08-23 Canon Inc 発光素子光量制御方式、発光素子光量制御装置およびそれを用いた画像記録装置
CN101180778A (zh) * 2005-03-30 2008-05-14 诺瓦光电技术公司 稳频竖直扩展腔表面发射激光器
JP4495052B2 (ja) * 2005-08-26 2010-06-30 古河電気工業株式会社 面発光レーザ素子、光送信モジュール、光コネクタおよび光通信システム
JP5083867B2 (ja) * 2007-03-02 2012-11-28 株式会社リコー 光源駆動装置、光走査装置及び画像形成装置
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP5058939B2 (ja) * 2007-11-27 2012-10-24 キヤノン株式会社 面発光レーザ、該面発光レーザによって構成される光学機器
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086643A (zh) * 2006-06-09 2007-12-12 佳能株式会社 光学扫描设备
CN101482911A (zh) * 2009-01-22 2009-07-15 中国科学院等离子体物理研究所 可变积分时间常数的积分器

Also Published As

Publication number Publication date
JP2011216662A (ja) 2011-10-27
KR20110109872A (ko) 2011-10-06
KR101691672B1 (ko) 2016-12-30
CN102208907A (zh) 2011-10-05
US8829813B2 (en) 2014-09-09
US20110241571A1 (en) 2011-10-06
JP5651983B2 (ja) 2015-01-14

Similar Documents

Publication Publication Date Title
CN102208907B (zh) 校正电路、驱动电路、发光器件和电流脉冲波形的校正方法
US8619827B2 (en) Correction circuit, drive circuit, light emitting device, and method of correcting current pulse waveform
US20120250713A1 (en) Correction circuit, driving circuit, light emitting apparatus, and method of correcting electric current pulse waveform
CN103715602B (zh) 校正电路、驱动电路、发光单元和电流脉冲波形校正方法
EP3235078B1 (en) Laser sensor module
US10320152B2 (en) Tunable laser
JP2011216662A5 (https=)
Lim et al. Design and simulation of next-generation high-power, high-brightness laser diodes
Fricke et al. High-power 980-nm broad-area lasers spectrally stabilized by surface Bragg gratings
US8976827B2 (en) Driving device and light-emitting unit
US12009638B2 (en) Surface emission laser driving method and surface emission laser device
El Amili et al. Experimental study of the delayed threshold phenomenon in a class-A VECSEL
JP2986877B2 (ja) 半導体レーザ装置
Geske et al. High-power VCSELs for smart munitions
Klehr et al. High peak-power nanosecond pulses generated with DFB RW laser
Geske et al. High power VCSELs for miniature optical sensors
Hand Novel 300-watt single-emitter laser diodes for laser initiation applications
Hassan et al. Record High Power Single-Mode Operations of Surface Grating VCSELs
Zhang et al. High power nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution
Abdelhamid Simulation, Fabrication and Characterization of Opti-cally Pumped Semiconductor Disk Lasers Without Sub-strate Removal
Shimada et al. Compact beam deflector based on slow-light Bragg reflector waveguide monolithically integrated with VCSEL
Summers et al. The Influence of the Gain—Carrier Density Characteristic on $ Q $-Switching in Quantum-Dot Lasers
Krejci et al. Miniaturized high power Er: YAG solid state laser pumped by a single laser diode bar
Rosales et al. High brightness ps-pulses from 1060-nm PBC semiconductor lasers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant