CN102208422A - 固体摄像器件、固体摄像器件制造方法以及电子装置 - Google Patents

固体摄像器件、固体摄像器件制造方法以及电子装置 Download PDF

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Publication number
CN102208422A
CN102208422A CN2011100759085A CN201110075908A CN102208422A CN 102208422 A CN102208422 A CN 102208422A CN 2011100759085 A CN2011100759085 A CN 2011100759085A CN 201110075908 A CN201110075908 A CN 201110075908A CN 102208422 A CN102208422 A CN 102208422A
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China
Prior art keywords
electric charge
holding region
conversion element
charge holding
gate electrode
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CN2011100759085A
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English (en)
Chinese (zh)
Inventor
山川真弥
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Sony Corp
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Sony Corp
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Publication of CN102208422A publication Critical patent/CN102208422A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2011100759085A 2010-03-31 2011-03-24 固体摄像器件、固体摄像器件制造方法以及电子装置 Pending CN102208422A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-080526 2010-03-31
JP2010080526A JP5505709B2 (ja) 2010-03-31 2010-03-31 固体撮像素子およびその製造方法、並びに電子機器

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CN102208422A true CN102208422A (zh) 2011-10-05

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US (1) US20110241080A1 (enExample)
JP (1) JP5505709B2 (enExample)
CN (1) CN102208422A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218073A (zh) * 2014-09-22 2014-12-17 北京思比科微电子技术股份有限公司 高信号摆幅的图像传感器像素及其操作方法
CN110729317A (zh) * 2018-07-17 2020-01-24 奕景科技(香港)有限公司 固态成像装置，制造固态成像装置的方法和电子设备
CN112189261A (zh) * 2018-06-21 2021-01-05 株式会社半导体能源研究所 摄像装置及其工作方法以及电子设备
CN112201666A (zh) * 2014-12-18 2021-01-08 索尼公司 固体摄像器件和电子装置
CN114731381A (zh) * 2019-12-18 2022-07-08 索尼半导体解决方案公司 受光装置
CN114830632A (zh) * 2019-12-26 2022-07-29 浜松光子学株式会社 光检测装置和光传感器的驱动方法
CN115066754A (zh) * 2020-02-10 2022-09-16 索尼半导体解决方案公司 传感器装置和距离测量装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5505709B2 (ja) * 2010-03-31 2014-05-28 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6231741B2 (ja) * 2012-12-10 2017-11-15 キヤノン株式会社 固体撮像装置およびその製造方法
TWI623232B (zh) * 2013-07-05 2018-05-01 Sony Corp 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器
JP2018049855A (ja) * 2016-09-20 2018-03-29 セイコーエプソン株式会社 固体撮像装置及び電子機器
CN115831992B (zh) * 2017-06-02 2024-07-16 索尼半导体解决方案公司 摄像装置
JP6506814B2 (ja) * 2017-10-18 2019-04-24 キヤノン株式会社 固体撮像装置およびカメラ
US10559614B2 (en) * 2018-03-09 2020-02-11 Semiconductor Components Industries, Llc Dual conversion gain circuitry with buried channels
CN112259565A (zh) * 2020-08-26 2021-01-22 天津大学 一种基于大尺寸像素的电荷快速转移方法
CN116936583A (zh) * 2022-03-31 2023-10-24 思特威(上海)电子科技股份有限公司 像素结构及制备方法、图像传感器、电子设备
WO2025169620A1 (ja) * 2024-02-09 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Citations (3)

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Publication number Priority date Publication date Assignee Title
CN1839476A (zh) * 2003-06-25 2006-09-27 微米技术有限公司 定制图像传感器中的栅极功函数
US20070075337A1 (en) * 2005-10-04 2007-04-05 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same
US20090251582A1 (en) * 2008-04-03 2009-10-08 Sony Corporation Solid state imaging device, driving method of the solid state imaging device, and electronic equipment

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Publication number Priority date Publication date Assignee Title
US5324680A (en) * 1991-05-22 1994-06-28 Samsung Electronics, Co. Ltd. Semiconductor memory device and the fabrication method thereof
JPH07273314A (ja) * 1993-01-14 1995-10-20 Samsung Electron Co Ltd 電荷伝送装置及びスイッチング素子
JP2008166607A (ja) * 2006-12-28 2008-07-17 Sony Corp 固体撮像装置とその製造方法、並びに半導体装置とその製造方法
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5505709B2 (ja) * 2010-03-31 2014-05-28 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1839476A (zh) * 2003-06-25 2006-09-27 微米技术有限公司 定制图像传感器中的栅极功函数
US20070075337A1 (en) * 2005-10-04 2007-04-05 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same
US20090251582A1 (en) * 2008-04-03 2009-10-08 Sony Corporation Solid state imaging device, driving method of the solid state imaging device, and electronic equipment

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218073A (zh) * 2014-09-22 2014-12-17 北京思比科微电子技术股份有限公司 高信号摆幅的图像传感器像素及其操作方法
CN112201666A (zh) * 2014-12-18 2021-01-08 索尼公司 固体摄像器件和电子装置
CN112189261A (zh) * 2018-06-21 2021-01-05 株式会社半导体能源研究所 摄像装置及其工作方法以及电子设备
CN110729317A (zh) * 2018-07-17 2020-01-24 奕景科技(香港)有限公司 固态成像装置，制造固态成像装置的方法和电子设备
CN114731381A (zh) * 2019-12-18 2022-07-08 索尼半导体解决方案公司 受光装置
CN114731381B (zh) * 2019-12-18 2025-11-21 索尼半导体解决方案公司 受光装置
CN114830632A (zh) * 2019-12-26 2022-07-29 浜松光子学株式会社 光检测装置和光传感器的驱动方法
CN115066754A (zh) * 2020-02-10 2022-09-16 索尼半导体解决方案公司 传感器装置和距离测量装置

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JP2011216530A (ja) 2011-10-27
JP5505709B2 (ja) 2014-05-28
US20110241080A1 (en) 2011-10-06

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