CN102197486B - 具有用于色彩分离的光栅的图像传感器 - Google Patents

具有用于色彩分离的光栅的图像传感器 Download PDF

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Publication number
CN102197486B
CN102197486B CN200980142487.4A CN200980142487A CN102197486B CN 102197486 B CN102197486 B CN 102197486B CN 200980142487 A CN200980142487 A CN 200980142487A CN 102197486 B CN102197486 B CN 102197486B
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layer
image sensor
charge
optical paths
pixel
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CN102197486A (zh
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约翰·P·麦卡滕
约瑟夫·苏马
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN200980142487.4A 2008-11-13 2009-10-30 具有用于色彩分离的光栅的图像传感器 Active CN102197486B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/269,907 US8400537B2 (en) 2008-11-13 2008-11-13 Image sensors having gratings for color separation
US12/269,907 2008-11-13
PCT/US2009/005915 WO2010056285A1 (en) 2008-11-13 2009-10-30 Image sensors having gratings for color separation

Publications (2)

Publication Number Publication Date
CN102197486A CN102197486A (zh) 2011-09-21
CN102197486B true CN102197486B (zh) 2015-02-18

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Country Status (7)

Country Link
US (1) US8400537B2 (enExample)
EP (1) EP2347443B1 (enExample)
JP (1) JP5676462B2 (enExample)
KR (1) KR101593258B1 (enExample)
CN (1) CN102197486B (enExample)
TW (1) TWI476908B (enExample)
WO (1) WO2010056285A1 (enExample)

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Also Published As

Publication number Publication date
KR101593258B1 (ko) 2016-02-11
TW201029166A (en) 2010-08-01
JP5676462B2 (ja) 2015-02-25
EP2347443A1 (en) 2011-07-27
US20100118172A1 (en) 2010-05-13
TWI476908B (zh) 2015-03-11
JP2012508977A (ja) 2012-04-12
CN102197486A (zh) 2011-09-21
US8400537B2 (en) 2013-03-19
WO2010056285A1 (en) 2010-05-20
KR20110082182A (ko) 2011-07-18
EP2347443B1 (en) 2017-04-12

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