CN102193001A - SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof - Google Patents
SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN102193001A CN102193001A CN2011101290313A CN201110129031A CN102193001A CN 102193001 A CN102193001 A CN 102193001A CN 2011101290313 A CN2011101290313 A CN 2011101290313A CN 201110129031 A CN201110129031 A CN 201110129031A CN 102193001 A CN102193001 A CN 102193001A
- Authority
- CN
- China
- Prior art keywords
- saw
- cantilever arm
- fine beam
- pregroove
- quartz plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses an SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor which relates to the field of microelectronic inertial components. The acceleration sensor comprises an SAW metal interdigital transducer, a quartz plate and a silicon substrate, wherein the quartz plate is provided with a micro cantilever, and the silicon substrate is provided with a preset groove; the SAW metal interdigital transducer is manufactured on the micro cantilever in the quartz plate; the micro cantilever is bonded on the silicon substrate provided with the preset groove; the quartz plate is thinned through bonding with another silicon substrate without groove firstly, then transferred to the silicon substrate provided with the preset groove by using a bonding process; the SAW metal interdigital transducer is manufactured on the part, corresponding to the preset groove, of the quartz plate; and the micro cantilever structure is etched on the quartz plate, so that the SAW metal interdigital transducer is arranged on the micro cantilever. Because the acceleration sensor disclosed by the invention is prepared by using an MEMS process, the acceleration sensor is small in component size and suitable for mass production, therefore, the acceleration sensor provided by the invention is high in reliability, large in sensitive range, low in power consumption, high in precision, small in size and easy to package.
Description
Technical field
The present invention relates to field of microelectronic devices, specially refer to a kind of acceleration transducer and method for making.
Background technology
Accelerometer is called acceleration transducer again, is one of core parts of inertial measurement system.Acceleration transducer normally utilizes responsive mass handle to be converted to its inertial force (Newton second law) by measuring acceleration, and then reaches the purpose of measuring acceleration.
Nineteen sixty-five, the R.M.White of the U.S. and F.M.Voltmov have invented can be after piezoelectric material surface encourages the metal interdigital transducers (abbreviating IDT as) of surface acoustic wave, surface acoustic wave (Surface Acoustic Waves is called for short SAW) technology has obtained developing rapidly.
The SAW accelerometer is a kind of new mechanical quantity sensor, and the SAW device is the critical component of SAW accelerometer, according to the difference of used SAW device, can be divided into resonator type and delay line type.The end of the year 1988, France the Thomson-CSF research centre has developed the SAW accelerometer that draws four types of a pressure type, non-cantilever arm fine beam formula, two non-cantilever arm fine beam formula and dihedral cantilever arm fine beam formulas, U.S. Rockwell also last century the eighties work out SAW accelerometer in order to unique technology of the quartzy beam of cantilever that forms two-dimentional capitate structure.In above product, because the restriction of cutting crystal sheet thickness, the cantilever arm fine beam size of producing also is very restricted, and cantilever arm fine beam needs a bigger support end in addition, and it is microminiaturized that difficulty will speed up meter.
China is starting late aspect the research of SAW accelerometer, Northwestern Polytechnical University develops the cantilever arm fine beam acceleration transducer in nineteen ninety, its structure is to paste two SAW devices in both sides up and down at a beams of metal, be used for the variation of perception beam motion brief acceleration, there is following defective in this system: (1) owing to the temperature drift of SAW resonator and the fatigue aging of encapsulation thereof, the accuracy of measurement of existing cantilever arm fine beam formula SAW acceleration transducer and stability are not high enough; (2) sensitive range of cantilever arm fine beam formula SAW acceleration transducer (range is closed and measured to sensitivity) is less, makes factors such as its fatigue break for avoiding forced speed inertial force, the size restrictions of cantilever arm fine beam the susceptibility of acceleration transducer; (3) owing to adopted beams of metal, system is difficult to realize microminiaturized.
Therefore be badly in need of a kind of reliability height, sensitive range is big, power consumption is little, precision is high, small size and acceleration transducer that is easy to encapsulate and method for making.
Summary of the invention
In view of this, in order to address the above problem, the present invention proposes a kind of reliability height, sensitive range is big, power consumption is little, precision is high, small size and acceleration transducer that is easy to encapsulate and method for making.
One of purpose of the present invention is to propose a kind of SAW-MEMS acceleration transducer; Two of purpose of the present invention is to propose a kind of SAW-MEMS acceleration transducer method for making.
One of purpose of the present invention is achieved through the following technical solutions:
SAW-MEMS acceleration transducer provided by the invention comprises SAW metal interdigital transducers, cantilever arm fine beam, quartz plate, pregroove silicon chip; Described cantilever arm fine beam support end is fixedly set on the quartz plate, the unsettled pregroove top that is arranged at the pregroove silicon chip of described cantilever arm fine beam free end, described SAW metal is inserted finger transducer and is arranged at cantilever arm fine beam upper surface cantilever end, the pregroove of the corresponding pregroove silicon chip of described cantilever arm fine beam lower surface, described cantilever arm fine beam upper surface is provided with input electrode and output electrode, and described metal interdigital transducers is connected with input and output electrode.
Further, described cantilever arm fine beam free end is provided with suspended mass, and described suspended mass is positioned at the free-ended upper surface of cantilever arm fine beam of pregroove top.
Further, the described pregroove degree of depth is between 2 microns to 500 microns.
Further, described cantilever arm fine beam be shaped as quadrilateral or polygon, the thickness of described cantilever arm fine beam is between 5 microns to 200 microns, length is between 50 microns to 1 centimetre.
Further, described SAW metal interdigital transducers is mode of resonance or delaying type.
Further, the described SAW metal interdigital transducers transducer that is Al, Cu or Au material.
Two of purpose of the present invention is achieved through the following technical solutions:
SAW-MEMS acceleration transducer method for making provided by the invention may further comprise the steps:
(1) upper surface at silicon chip etches groove, forms the silicon chip that has pregroove;
(2) with silicon chip and another quartz plate bonding of with groove;
(3) quartz plate attenuate and polishing are formed default cavity;
(4) on quartzy substrate, make SAW interdigital transducer and electrode;
(5) on quartzy substrate, etch cantilever arm fine beam.
Further, adopt following steps in the described step (3):
(31) silicon chip and quartz plate are formed no groove silicon chip-quartzy double-decker substrate by bonding technology;
(32) will close to form with no groove silicon chip-quartzy double-deck quartz plate one side switch with groove one side of the silicon chip of pregroove and preset cavity;
(33) will not have the groove silicon substrate and carry out preliminary mechanical reduction, will not have channel insulation body silicon layer by chemical corrosion and all remove, finish top layer silicon by no groove silicon substrate to the transfer that the groove silicon substrate is arranged;
Further, also be included in suspended mass is set on the cantilever arm fine beam, described suspended mass is to append on the cantilever arm fine beam by plated film, welding or etching mode;
Further, the substrate silicon substrate in the described step (1) to (5) can replace with crystal or fused silica material.
The invention has the advantages that: the present invention adopts and quartz plate is set on the silicon chip of pregroove and etches cantilever arm fine beam on quartz plate, on cantilever arm fine beam, make SAW and insert finger transducer with the corresponding position of pregroove, adopt MEMS technology when making acceleration transducer, device size is little, is fit to produce in batches; Therefore acceleration transducer reliability height provided by the invention, the large and small size of sensitive range and be easy to encapsulation.
Other advantage of the present invention, target and feature will be set forth to a certain extent in the following description, and to a certain extent, based on being conspicuous to those skilled in the art, perhaps can obtain instruction from the practice of the present invention to investigating hereinafter.The objectives and other advantages of the present invention can be passed through following instructions, claims, and the specifically noted structure realizes and obtains in the accompanying drawing.
Description of drawings
In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing, wherein:
Fig. 1 is the plan view from above of embodiment provided by the invention;
Fig. 2 is the A-A ' sectional view among the embodiment provided by the invention;
Fig. 3 (a) to Fig. 3 (e) be embodiment 1 manufacture craft process flow diagram provided by the invention;
Fig. 4 (a) to Fig. 4 (d) be embodiment 2 manufacture craft process flow diagrams provided by the invention;
Fig. 5 is the structure and the stressed synoptic diagram of cantilever arm fine beam.
The name of number in the figure representative is called: 1 silicon chip for the band pregroove, and 2 is pregroove, and 3 is quartz plate, and 4 are the silicon chip of no groove, and 5 for inserting finger transducer (IDT), and 6 is suspended mass, and 7 is cantilever arm fine beam.
Embodiment
Below with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail; Should be appreciated that preferred embodiment only for the present invention is described, rather than in order to limit protection scope of the present invention.
The SAW accelerometer is a kind of new mechanical quantity sensor, and the SAW device is the critical component of SAW accelerometer, and SAW is at environment change of living in or be subjected to time spent of doing of physics, chemistry, biomass, and its frequency of operation or time delay also can change.According to the corresponding relation of these variations, just can determine measured size with measured amount.The acceleration transducer of making according to this principle can the measurement mechanical amount, temperature, gas, humidity, biomass etc.
Introduce principle of sensors below:
Fig. 5 is the structure and the stressed synoptic diagram of cantilever arm fine beam, and as shown in the figure, for the cantilever arm fine beam of the isotropic material of free end suspended mass m, the maximum strain component of cantilever arm fine beam is in the upper and lower surface of beam, and its horizontal direction components of strain are:
Wherein E is the elastic modulus of beam material, and L represents semi-girder length, and h represents semi-girder thickness, and b represents the semi-girder width, and x represents length direction x axle, and y represents thickness direction y axle, and F represents the inertial force of mass m.
This shows, cantilever arm fine beam maximum strain component is at support end, and with square being inversely proportional to of thickness, the sensitivity of acceleration and the thickness of beam have important correlativity, as long as cantilever thickness is reduced an order of magnitude, will bring the lifting of two orders of magnitude of acceleration sensitivity, the volume to acceleration will bring reducing of several orders of magnitude simultaneously.
Fig. 1 is the plan view from above of embodiments of the invention; Fig. 2 is the A-A ' sectional view in the embodiments of the invention; As shown in the figure: SAW-MEMS acceleration transducer provided by the invention comprises SAW metal interdigital transducers 5, cantilever arm fine beam 7, quartz plate 3, pregroove silicon chip 1; Described cantilever arm fine beam 7 support ends are fixedly set on the quartz plate 3, the unsettled pregroove top that is arranged at the pregroove silicon chip of described cantilever arm fine beam free end, described SAW metal is inserted finger transducer 5 and is arranged at cantilever arm fine beam 7 upper surface cantilever ends, the pregroove of the corresponding pregroove silicon chip of described cantilever arm fine beam lower surface, described cantilever arm fine beam upper surface is provided with input electrode and output electrode, and described metal interdigital transducers is connected with input and output electrode.
As the further improvement of the foregoing description, described cantilever arm fine beam free end is provided with suspended mass 6, and described suspended mass 6 is positioned at the cantilever arm fine beam 7 free-ended upper surfaces of pregroove top.
As the further improvement of the foregoing description, described pregroove 2 degree of depth are between 2 microns to 500 microns.
As the further improvement of the foregoing description, described cantilever arm fine beam be shaped as quadrilateral or polygon, the thickness of described cantilever arm fine beam is between 5 microns to 200 microns, length is between 50 microns to 1 centimetre.
As the further improvement of the foregoing description, described SAW metal interdigital transducers is mode of resonance or delaying type.
As the further improvement of the foregoing description, described SAW metal interdigital transducers is the transducer of Al, Cu or Au material.
Fig. 3 is embodiment 1 a manufacture craft process flow diagram provided by the invention;
SAW-MEMS acceleration transducer method for making provided by the invention may further comprise the steps:
(1) as 3(a among Fig. 3), etch groove at the upper surface of silicon chip, form the silicon chip that has pregroove;
(2) as 3(b among Fig. 3), with silicon chip and another quartz plate bonding of with groove;
(3) as 3(c among Fig. 3), quartz plate attenuate and polishing are formed default cavity;
(4) as 3(d among Fig. 3), on quartzy substrate, make SAW interdigital transducer and electrode;
(5) as 3(e among Fig. 3), on quartzy substrate, etch cantilever arm fine beam.
Fig. 4 is embodiment 2 manufacture craft process flow diagrams provided by the invention; Fig. 4 is another embodiment of Fig. 3 (c) step, compares with Fig. 3, the cantilever arm fine beam thickness homogeneous and controllable that Fig. 4 produces, and little cantilever thickness of producing is thinner.As the further improvement of the foregoing description, described step specifically may further comprise the steps in (3):
As 4(b among Fig. 4), (31) form the quartzy double-decker substrate of no groove silicon chip 4-with silicon chip and quartz plate by bonding technology;
As 4(c among Fig. 4), (32) will close to form with quartzy double-deck quartz plate one side switch of no groove silicon chip 4-and preset cavity with groove one side of the silicon chip of pregroove;
As 4(d among Fig. 4), (33) will not have the groove silicon substrate and will carry out preliminary mechanical reduction, will not have channel insulation body silicon layer by chemical corrosion and all remove, finish top layer silicon by no groove silicon substrate to the transfer that the groove silicon substrate is arranged.
As the further improvement of the foregoing description, also be included in suspended mass is set on the cantilever arm fine beam, described suspended mass is to append on the cantilever arm fine beam by plated film, welding or etching mode.
As the further improvement of the foregoing description, the substrate silicon substrate in the described step (1) to (5) can replace with crystal or fused silica material.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the SAW-MEMS acceleration transducer is characterized in that: comprise SAW metal interdigital transducers, cantilever arm fine beam, quartz plate, pregroove silicon chip; Described cantilever arm fine beam support end is fixedly set on the quartz plate, the unsettled pregroove top that is arranged at the pregroove silicon chip of described cantilever arm fine beam free end, described SAW metal is inserted finger transducer and is arranged at cantilever arm fine beam upper surface cantilever end, the pregroove of the corresponding pregroove silicon chip of described cantilever arm fine beam lower surface, described cantilever arm fine beam upper surface is provided with input electrode and output electrode, and described metal interdigital transducers is connected with output electrode with input electrode.
2. SAW-MEMS acceleration transducer according to claim 1 is characterized in that: described cantilever arm fine beam free end is provided with suspended mass, and described suspended mass is positioned at the free-ended upper surface of cantilever arm fine beam of pregroove top.
3. SAW-MEMS acceleration transducer according to claim 2 is characterized in that: the described pregroove degree of depth is between 2 microns to 500 microns.
4. SAW-MEMS acceleration transducer according to claim 3, it is characterized in that: described cantilever arm fine beam be shaped as quadrilateral or polygon, the thickness of described cantilever arm fine beam is between 5 microns to 200 microns, and length is between 50 microns to 1 centimetre.
5. SAW-MEMS acceleration transducer according to claim 4 is characterized in that: described SAW metal interdigital transducers is mode of resonance or delaying type.
6. SAW-MEMS acceleration transducer according to claim 5 is characterized in that: described SAW metal interdigital transducers is the transducer of Al, Cu or Au material.
7. SAW-MEMS acceleration transducer method for making is characterized in that: may further comprise the steps:
(1) upper surface at silicon chip etches groove, forms the silicon chip that has pregroove;
(2) with silicon chip and another quartz plate bonding of with groove;
(3) quartz plate attenuate and polishing are formed default cavity;
(4) on quartzy substrate, make SAW interdigital transducer and electrode;
(5) on quartzy substrate, etch cantilever arm fine beam.
8. SAW-MEMS acceleration transducer method for making according to claim 7 is characterized in that: adopt following steps in the described step (3):
(31) will not have groove silicon substrate and quartz plate and form silicon chip-quartzy double-decker by bonding technology;
(32) will close to form with no groove silicon chip-quartzy double-deck quartz plate one side switch with groove one side of the silicon chip of pregroove and preset cavity;
(33) will not have the groove substrate and carry out preliminary mechanical reduction, will not have channel insulation body silicon layer by chemical corrosion and all remove, finish top layer silicon by no groove silicon substrate to the transfer that the groove silicon substrate is arranged.
9. according to claim 7 or 8 described SAW-MEMS acceleration transducer method for makings, it is characterized in that: also be included in suspended mass is set on the cantilever arm fine beam, described suspended mass is to append on the cantilever arm fine beam by plated film, welding or etching mode.
10. SAW-MEMS acceleration transducer method for making according to claim 9 is characterized in that: the substrate silicon substrate in the described step (1) to (5) can replace with crystal or fused silica material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101290313A CN102193001A (en) | 2011-05-18 | 2011-05-18 | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101290313A CN102193001A (en) | 2011-05-18 | 2011-05-18 | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102193001A true CN102193001A (en) | 2011-09-21 |
Family
ID=44601460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101290313A Pending CN102193001A (en) | 2011-05-18 | 2011-05-18 | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102193001A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104006875A (en) * | 2014-06-11 | 2014-08-27 | 常州智梭传感科技有限公司 | Sensing vibration sensor with temperature compensation based on acoustic surface waves |
| CN104007288A (en) * | 2014-06-11 | 2014-08-27 | 常州智梭传感科技有限公司 | Sensing acceleration sensor with temperature compensation based on acoustic surface waves |
| CN104132768A (en) * | 2014-07-01 | 2014-11-05 | 苏州大学 | Silicon-silicon-bonding-based pressure sensor capable of isolating packaging stress |
| WO2015176606A1 (en) * | 2014-05-19 | 2015-11-26 | 无锡华润上华半导体有限公司 | Method for manufacturing mems mass block |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN107667069A (en) * | 2015-06-26 | 2018-02-06 | 英特尔公司 | III N MEMS structures on IV races substrate |
| CN110081918A (en) * | 2019-04-26 | 2019-08-02 | 中北大学 | Multi-parameter surface acoustic wave sensing device and preparation method thereof |
| CN111398872A (en) * | 2020-03-19 | 2020-07-10 | 西安交通大学 | Magnetic sensor based on surface acoustic wave and magnetic torque effect and preparation method |
| WO2020215611A1 (en) * | 2019-04-26 | 2020-10-29 | 中北大学 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08160068A (en) * | 1994-11-30 | 1996-06-21 | Tokimec Inc | Accelerometer and its production |
| CN101578230A (en) * | 2007-01-22 | 2009-11-11 | 硅绝缘体技术有限公司 | Process for forming and controlling rough interfaces |
| CN101977026A (en) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) |
| CN202093043U (en) * | 2011-05-18 | 2011-12-28 | 中国电子科技集团公司第二十六研究所 | SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor |
-
2011
- 2011-05-18 CN CN2011101290313A patent/CN102193001A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08160068A (en) * | 1994-11-30 | 1996-06-21 | Tokimec Inc | Accelerometer and its production |
| CN101578230A (en) * | 2007-01-22 | 2009-11-11 | 硅绝缘体技术有限公司 | Process for forming and controlling rough interfaces |
| CN101977026A (en) * | 2010-11-01 | 2011-02-16 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of cavity-type film bulk acoustic resonator (FBAR) |
| CN202093043U (en) * | 2011-05-18 | 2011-12-28 | 中国电子科技集团公司第二十六研究所 | SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor |
Non-Patent Citations (1)
| Title |
|---|
| 韩伟华等: "利用键合方法转椅薄膜材料", 《半导体光电》, vol. 21, no. 6, 31 December 2000 (2000-12-31), pages 422 - 424 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176606A1 (en) * | 2014-05-19 | 2015-11-26 | 无锡华润上华半导体有限公司 | Method for manufacturing mems mass block |
| CN104006875A (en) * | 2014-06-11 | 2014-08-27 | 常州智梭传感科技有限公司 | Sensing vibration sensor with temperature compensation based on acoustic surface waves |
| CN104007288A (en) * | 2014-06-11 | 2014-08-27 | 常州智梭传感科技有限公司 | Sensing acceleration sensor with temperature compensation based on acoustic surface waves |
| CN104132768A (en) * | 2014-07-01 | 2014-11-05 | 苏州大学 | Silicon-silicon-bonding-based pressure sensor capable of isolating packaging stress |
| CN107667069A (en) * | 2015-06-26 | 2018-02-06 | 英特尔公司 | III N MEMS structures on IV races substrate |
| CN107667069B (en) * | 2015-06-26 | 2022-02-01 | 英特尔公司 | III-N MEMS structure on group IV substrate |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN106961258B (en) * | 2017-05-04 | 2023-08-15 | 杭州左蓝微电子技术有限公司 | Cavity type surface acoustic wave resonator and processing method thereof |
| CN110081918A (en) * | 2019-04-26 | 2019-08-02 | 中北大学 | Multi-parameter surface acoustic wave sensing device and preparation method thereof |
| WO2020215611A1 (en) * | 2019-04-26 | 2020-10-29 | 中北大学 | Multi-parameter surface acoustic wave sensing device, manufacturing method, and aircraft monitoring system |
| CN111398872A (en) * | 2020-03-19 | 2020-07-10 | 西安交通大学 | Magnetic sensor based on surface acoustic wave and magnetic torque effect and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102193001A (en) | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof | |
| CN109786422B (en) | Piezoelectric excitation tension type silicon micro-resonance pressure sensor chip and preparation method thereof | |
| CN202093043U (en) | SAW-MEMES (surface acoustic wave micro-electromechanical system) acceleration sensor | |
| Li et al. | Micromachined piezoresistive accelerometers based on an asymmetrically gapped cantilever | |
| CN103674355B (en) | A kind of floated force-sensing sensor chip eliminating encapsulation stress and preparation method thereof | |
| CN209024198U (en) | A kind of second level stress isolation structure applied to MEMS force sensitive device | |
| CN103731118B (en) | Vibrating reed, oscillator, agitator, sensor and electronic equipment | |
| CN108614129A (en) | A kind of MEMS piezoelectric acceleration transducers and preparation method thereof | |
| CN101271124B (en) | L-beam piezoresistance type micro-accelerometer and production method thereof | |
| CN102608356A (en) | Double-shaft micromechanical resonant accelerometer structure and manufacturing method thereof | |
| CN106323155A (en) | Coupling resonance type resonant strain sensor | |
| JP2011145243A (en) | Acceleration sensor and acceleration detecting apparatus | |
| CN105021846A (en) | Six-axis integrated miniature acceleration sensor and manufacturing method therefor | |
| CN102053168A (en) | Acceleration sensor | |
| CN109154533A (en) | Micromechanics this bulk acoustic wave resonator pressure sensor | |
| CN109883581B (en) | Cantilever beam type differential resonance pressure sensor chip | |
| CN102122935A (en) | Micro-mechanical resonator having submicron clearances and manufacturing method thereof | |
| CN109765404B (en) | Accelerometer chip based on QoS technology, processing technology and accelerometer | |
| JP2006308325A (en) | Dynamic quantity detection sensor and its manufacturing method | |
| CN101531334A (en) | Magnetic drive micro-inertial sensor for increasing detection capacitance and preparation method | |
| CN105182003B (en) | Torsional pendulum type differential capacitance accelerometer and preparation method with buffer structure | |
| CN104198762A (en) | Eight-beam symmetrical silicon micro-accelerometer | |
| CN107101629B (en) | Silicon micromechanical graphene beam resonant gyroscope | |
| CN109110724A (en) | A kind of second level stress isolation structure applied to MEMS force sensitive device | |
| CN106895777B (en) | Resonant type strain structure based on range expansion, strain sensor and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110921 |