CN209024198U - A kind of second level stress isolation structure applied to MEMS force sensitive device - Google Patents
A kind of second level stress isolation structure applied to MEMS force sensitive device Download PDFInfo
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- CN209024198U CN209024198U CN201821615013.XU CN201821615013U CN209024198U CN 209024198 U CN209024198 U CN 209024198U CN 201821615013 U CN201821615013 U CN 201821615013U CN 209024198 U CN209024198 U CN 209024198U
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Abstract
The utility model discloses a kind of second level stress isolation structures (3) applied to MEMS force sensitive device, including outer frame structure (14) and the power sensitive structure (9) being arranged in outer frame structure (14), the outer frame structure (14) includes inner frame (15), the upper and lower ends of the inner frame (15) pass through at least one stress collection central sill (12) respectively and connect with corresponding stress decay beam (13), the stress decay beam (13) fixed anchor point (10) phase loigature internal with flexible connection (11) is located at by multiple flexible connections (11), the utility model can be realized second level stress release, the flexible connection (11) is level-one stress isolation, stress decay beam (13) and stress collection central sill (12) are that short and thick buckstay constitutes transitional frame Frame can completely cut off the stress generated in sensitive structure technique and encapsulation process as second level stress isolation on sensitive structure layer.
Description
Technical field
The utility model relates to force sensitive device technical field more particularly to a kind of two applied to MEMS force sensitive device
Grade stress isolation structure.
Background technique
MEMS sensor, that is, MEMS (Microelectro Mechanical Systems), is in microelectronics skill
The research frontier of the multi-crossed disciplines to grow up on the basis of art.By development in more than 40 years, it has also become attract attention in the world
One of great sciemtifec and technical sphere.It is related to a variety of subjects such as electronics, machinery, material, physics, chemistry, biology, medicine and skill
Art has broad application prospects.Wherein, MEMS pressure sensor, accelerometer, gyroscope etc. are all typical force sensors
Part, their multi-purpose high-acruracy surveys for making pressure, displacement (acceleration) and posture (angular speed), have it is small in size, low in energy consumption, with
Ic process compatibility and it is easy to the features such as producing in enormous quantities.
These devices are all made of MEMS technology, and material includes polysilicon, quartz, SiC, SOI (Sili-con on
Insulator), SOS (silicon on sapphire) etc..In MEMS technology and encapsulation process, due to the material property (packet of different materials
Include Young's modulus, thermal expansion coefficient etc.) it is inconsistent, and the conversion of the processing steps high/low temperature such as deposition, bonding, patch will cause
Very important stress causes malformation and stress to be concentrated to be transmitted on the sensitive structure of sensor.Due to power sensitivity
The sensitivity principle of device is exactly to convert power for the measurement to be checked of external world's input, then acts on lower electric signal by detecting its stress
Variation resolve, on the one hand the caused malformation of stress and stress, which are concentrated, can interfere detection of the sensor to power, Wu Faqu
The main affected by force of variation or the external world's input influence for dividing output electric signal, on the other hand will cause device use process
Fatigue or fracture.Therefore, the presence of stress not only will affect the measurement accuracy and stability of force sensitive device, but also can be certain
Its service life is influenced in degree, so, stress isolation is extremely important to power sensitive sensor.
By taking inertial sensor as an example, the north of Anhui in 2013 Xin Donglianke microsystems technology Co., Ltd proposes a kind of tool
There is the MEMS element (201320205008.2) for reducing encapsulation stress structure, at least one load column overleaf loaded on layer,
There is bonding die glue on encapsulating package bottom plate, bonding die glue surrounds load column.Pass through the load column and package tube in MEMS chip back layer
MEMS chip is fixed on encapsulating package bottom plate by the bonding die glue on shell bottom plate, but its uniformity and symmetry it is not good enough and
It guarantees that chip and the guarantee of the gross area confrontation mechanical shock ability effect of bonding die splicing touching are also not good enough；GoerTek sound in 2015
It learns limited liability company and discloses a kind of MEMS inertial sensor (201510227170.8) of stress isolation, answered by one
Power separation layer, which uniformly divides the stress transmitted from substrate on sensitive structure, produces entire sensitive structure to temperature and stress
Raw strain has consistent response, such common-mode signal is disappeared can completely by the differential configuration of sensitive structure itself
It removes, but but also processing increases many stress sources while excessively complicated structure increases difficulty of processing；2016
Nian Yangjun etc. proposes a kind of LCC encapsulation stress release structure (201410720844.3), substrate support point and anchor point beam
Connection has completely cut off the stress of device outer case to a certain extent, but its beam is unable to reach its isolation effect most using short and thick beam
It is good；2017 Nian Changhong dragons etc. propose a kind of similar SOI base micro-inertia sensor encapsulation stress partition method
(2016109195522.0), the crab foot beam used can more efficiently Isolation stress, and it is by supporting point centre
Anchor point is placed on surrounding and is reduced using glue surface product, and encapsulation stress is effectively reduced.But in general, these encapsulation stress partition methods
There are problems that a general character, i.e., all for the chip that MEMS technology is completed, then to die stress isolation in encapsulation process.
Such scheme to the isolation of stress be bound to can not the stress that is generated in MEMS technology process of isolation sensor chip (such as
The processing steps such as deposition, the bonding of different materials), this kind of stress be usually different materials before and after completing processing step by temperature
Variation causes thermal characteristics to mismatch, the thermal stress then generated, same very important.
At present to correlative study was also done before the stress isolation of sensitive structure layer, 2016 crystalline substances etc. propose a kind of correspondence
The insensitive self calibration silicon micro-resonance type accelerometer structure (201610955241.0) of power generates heat for MEMS technology step
The problem of stress, gives the design scheme of accelerometer sensitive structure layer, fixed anchor point and structural framing and is connected by flexible beam
It connects, improves the effect of MEMS technology stress isolation to a certain extent, but still remain portion of residual in sensitive structure layer
Stress influence signal detection.
Utility model content
The purpose of this utility model is to provide the insensitive second level stress isolation structures of a kind of pair of stress, can be in sensitivity
Completely cut off the stress generated in sensitive structure technique and encapsulation process on structure sheaf.
Realize the technical solution of the utility model aim are as follows: a kind of second level stress applied to MEMS force sensitive device
Isolation structure, including outer frame structure and the power sensitive structure being arranged in outer frame structure, the external frame knot
Structure includes inner frame, and the upper and lower ends of the inner frame pass through at least one stress collection central sill and corresponding stress decay beam respectively
Connection, the stress decay beam are connected by multiple flexible connections with the fixed anchor point being located inside flexible connection.
Further, the flexible connection is made of U-shaped beam or bow beam.
Further, the upper end of the inner frame is answered by upper stress collection central sill and the left stress decay beam in upper end and the upper end right side
Power decaying beam connection, the lower end of the inner frame is declined by lower stress collection central sill and the left stress decay beam in lower end and the right stress in lower end
Subtracting beam connection, the left flexible connection in terminus inner setting upper end of the left stress decay beam in upper end is connected with the left fixed anchor point in upper end,
The right flexible connection in terminus inner setting upper end of the right stress decay beam in upper end is connected with the right fixed anchor point in upper end, the left stress in lower end
The left flexible connection in terminus inner setting lower end of decaying beam is connected with the left fixed anchor point in lower end, the end of the right stress decay beam in lower end
The right flexible connection in the internal setting lower end in end is connected with the right fixed anchor point in lower end.
Further, the power sensitive structure is resonance type accelerometer, resonant mode gyroscope or resonant mode pressure sensing
The sensitive structure of device.
Further, the flexible connection is polygonized structure, and each edge of the polygonized structure is horizontally or vertically
's.
Further, the flexible connection is square structure.
Further, the material of the second level stress isolation structure is silicon.
The utility model compared with prior art, remarkable advantage are as follows: (1) structure and technics comparing are simple, and reduction is answered
Power source；(2) stress isolation is more comprehensive, being capable of isolation structure etching, different materials deposition, bonding and the stickup production with shell
Raw stress, effect is obvious, and not only only completely cuts off the stress transmitted outside fixed anchor point；(3) fixed anchor point and frame connect
Stress can be isolated in the flexible connection connect and whole rigidity is unaffected.(4) sensitive structure and rigid internal frame
It is connected, without being directly connected with fixed anchor point.
Detailed description of the invention
Fig. 1 is the second level stress isolation structure structural schematic diagram that the utility model is applied to MEMS force sensitive device.
Fig. 2 is the utility model flexible connecting structure schematic diagram.
Fig. 3 is the schematic diagram that the utility model stress isolation structure is applied to silicon micro-resonance type accelerometer.
Specific embodiment
As shown in Figure 1, a kind of second level stress isolation structure 3 applied to MEMS force sensitive device, including external frame knot
Structure 14 and the power sensitive structure 9 being arranged in outer frame structure 14, the outer frame structure 14 include inner frame 15, institute
The upper and lower ends for stating inner frame 15 pass through at least one stress collection central sill 12 respectively and connect with corresponding stress decay beam 13, described
Stress decay beam 13 is connected by multiple flexible connections 11 with the fixed anchor point 10 being located inside flexible connection 11.
Further, the flexible connection 11 is made of U-shaped beam or bow beam, described as shown in Figure 2 to be flexibly connected 11 by U
Type beam is constituted.
Further, the upper end of the inner frame 15 by upper stress collection central sill 12a and the left stress decay beam 13a in upper end and
The right stress decay beam 13b connection in upper end, the lower end of the inner frame 15 pass through lower stress collection central sill 12b and the left stress decay in lower end
Beam 13c is connected with the right stress decay beam 13d in lower end, and the left flexibility in terminus inner setting upper end of the left stress decay beam 13a in upper end is even
It meets 11a to be connected with the left fixed anchor point 10a in upper end, the right flexibility in terminus inner setting upper end of the right stress decay beam 13b in upper end is even
It meets 11b to be connected with the right fixed anchor point 10b in upper end, the left flexibility in terminus inner setting lower end of the left stress decay beam 13c in lower end is even
It meets 11c to be connected with the left fixed anchor point 10c in lower end, the right flexibility in terminus inner setting lower end of the right stress decay beam 13d in lower end is even
11d is met to be connected with the right fixed anchor point 10d in lower end.
Further, the power sensitive structure 9 is resonance type accelerometer, resonant mode gyroscope or resonant mode pressure sensing
Device sensitive structure.
Further, the flexible connection 11 is polygonized structure, and each edge of the polygonized structure is horizontal or vertical
Straight.
Further, the flexible connection 11 is square structure.
Further, the second level stress isolation structure is by etching on a bulk silicon silicon wafer.
Flexible connection as shown in Fig. 2, it uses U-shaped beam since another big directional stiffness of one directional stiffness is small,
It can guarantee integrally-built rigidity in the case where Isolation stress.
Fig. 3 is the structural schematic diagram that the utility model stress isolation structure is applied to silicon micro-resonance type accelerometer, upper layer
For the structure cover board 4 of accelerometer, the setting of stress isolation structure 3 is in centre, and lower layer is the substrate 5 of accelerometer, while substrate 5
Top connects the fixed anchor point 10 of stress isolation structure 3, and lower layer is sticked together by packaging plastic 8 with ceramic cartridge 2.Stress isolation
There are SiO in the two sides up and down of structure 327 are used as insulating layer, upper layer SiO2Top be connected with Au layer 6, and Au layer 6 arrange signal it is defeated
Enter/transmitting of the output line 1 for electric signal.
The accelerometer can be on the object for needing measuring acceleration.Briefly introduce the accelerometer course of work and
Principle, as shown in figure 3, including a mass block in power sensitive structure 9, the upper and lower side of mass block separately includes a resonance beam, in reality
In the course of work of border when having acceleration, the inertia force of mass block is added in resonance beam, upper and lower two resonance beams resonance frequency
Rate changes, and two compression resonance frequencies of tension one of resonance beam one change in the opposite direction, and can be obtained by differential frequency
To the value of acceleration.
This structure can be realized second level stress release, and the flexible connection 11 is level-one stress isolation, stress decay beam 13
It is that short and thick buckstay constitutes transition frame with stress collection central sill 12, as second level stress isolation.
Stress isolation effect is obtained below by Experimental comparison:
Isolation stress predominantly completely cuts off stress variation caused by temperature change.
Influence of the influence mainly to resonance beam resonant frequency due to stress to accelerometer is so humorous with accelerometer
Vibration beam resonant frequency variation with temperature varies with temperature influence to Sensitive Apparatus to characterize stress, and the reality of accelerometer is humorous
Vibration frequency calculation formula:
Wherein: f (T1) be accelerometer actual resonance frequency；fM(T1) it is that accelerometer does not have extraneous stress to influence
Natural resonance frequency；σ(T1) be second level stress isolation mechanism restrained end stress value；β is stress coefficient relevant to structure.
The temperature coefficient actual frequency temperature coefficient TCf of the variation of resonance frequency caused by accelerometer temperature changes (can only
Obtained by experiment) consist of two parts, first is that the external stress transmitted varies with temperature caused frequency-temperature coefficient TCfσ,
Second is that the natural frequency temperature coefficient TCf of silicon materials itselfE。
TCf=TCfE+TCfσ
Silicon materials, which vary with temperature, causes natural frequency to change, the temperature coefficient TCf of frequencyEIt is asked by following formula
:
Wherein: fMFor fM(T0), wherein T0=25 DEG C.
TCfEIt is that the characteristic of material itself can not change, we can only reduce as far as possible TCf by Isolation stressσ。
By temperature test TCf do not have in the case where any stress isolation mechanism -1032.4ppm/ DEG C to -
Between 700ppm/ DEG C, and pass through experiment discovery in only single-stage stress isolation structure of the flexible connection as stress isolation mechanism
In between -300ppm/ DEG C to -170ppm/ DEG C, present structure be -34ppm/ DEG C with the frequency temperature of silicon materials itself
It spends coefficient and differs TCfEVery little, TCfσIt is sufficiently small, it has been substantially isolated extraneous stress influence.
The basic principles and main features and advantage of the utility model have been shown and described above.The technical staff of the industry
It should be appreciated that the present utility model is not limited to the above embodiments, the above embodiments and description only describe this
The principle of utility model, on the premise of not departing from the spirit and scope of the utility model, the utility model also has various change
And improvement, these various changes and improvements fall within the scope of the claimed invention.The utility model requires protection scope
It is defined by the appending claims and its equivalent thereof.
Claims (7)
1. a kind of second level stress isolation structure (3) applied to MEMS force sensitive device, which is characterized in that including external frame knot
Structure (14) and the power sensitive structure (9) being arranged in outer frame structure (14), the outer frame structure (14) include interior
Frame (15), the upper and lower ends of the inner frame (15) pass through at least one stress collection central sill (12) respectively and decline with corresponding stress
Subtract beam (13) connection, the stress decay beam (13) passes through multiple flexible connections (11) and (11) are internal to be consolidated positioned at being flexibly connected
Determine anchor point (10) to be connected.
2. second level stress isolation structure (3) according to claim 1, which is characterized in that the flexible connection (11) is by U-shaped
Beam or bow beam are constituted.
3. second level stress isolation structure (3) according to claim 1 or 2, which is characterized in that the inner frame (15) it is upper
End is connect by upper stress collection central sill (12a) with the right stress decay beam (13b) of the left stress decay beam (13a) in upper end and upper end, institute
It is declined by lower stress collection central sill (12b) and the left stress decay beam (13c) in lower end and the right stress in lower end the lower end for stating inner frame (15)
Subtract beam (13d) connection, the terminus inner setting left flexible connection (11a) in upper end of the left stress decay beam (13a) in upper end and upper end are left
Fixed anchor point (10a) is connected, the terminus inner of the right stress decay beam (13b) in the upper end setting right flexible connection (11b) in upper end and
Upper end right fixed anchor point (10b) is connected, and the left flexible connection in lower end is arranged in the terminus inner of the left stress decay beam (13c) in lower end
(11c) is connected with lower end left fixed anchor point (10c), and the terminus inner setting lower end right side of the right stress decay beam (13d) in lower end is soft
Property connection (11d) be connected with lower end right fixed anchor point (10d).
4. second level stress isolation structure (3) according to claim 3, which is characterized in that the power sensitive structure (9) is humorous
The sensitive structure of vibration formula accelerometer, resonant mode gyroscope or resonance type pressure sensor.
5. second level stress isolation structure (3) according to claim 4, which is characterized in that the flexible connection (11) is more
Side shape structure, each edge of the polygonized structure are horizontally or vertically.
6. second level stress isolation structure (3) according to claim 5, which is characterized in that the flexible connection (11) is positive
Square structure.
7. second level stress isolation structure (3) according to claim 1, which is characterized in that the second level stress isolation structure
(3) material is silicon.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109110724A (en) * | 2018-09-30 | 2019-01-01 | 南京理工大学 | A kind of second level stress isolation structure applied to MEMS force sensitive device |
| CN110668391A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Double-end fixed supporting plate type MEMS structure with stress release function |
| WO2023065834A1 (en) * | 2021-06-21 | 2023-04-27 | 西北工业大学 | Annular coupling system suitable for mems modal localization sensor |
| US11686581B2 (en) | 2020-06-08 | 2023-06-27 | Analog Devices, Inc. | Stress-relief MEMS gyroscope |
| US11692825B2 (en) | 2020-06-08 | 2023-07-04 | Analog Devices, Inc. | Drive and sense stress relief apparatus |
| US11698257B2 (en) | 2020-08-24 | 2023-07-11 | Analog Devices, Inc. | Isotropic attenuated motion gyroscope |
| WO2024027326A1 (en) * | 2022-07-30 | 2024-02-08 | 华为技术有限公司 | Temperature control apparatus and related device |
-
2018
- 2018-09-30 CN CN201821615013.XU patent/CN209024198U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109110724A (en) * | 2018-09-30 | 2019-01-01 | 南京理工大学 | A kind of second level stress isolation structure applied to MEMS force sensitive device |
| CN110668391A (en) * | 2019-08-27 | 2020-01-10 | 华东光电集成器件研究所 | Double-end fixed supporting plate type MEMS structure with stress release function |
| US11686581B2 (en) | 2020-06-08 | 2023-06-27 | Analog Devices, Inc. | Stress-relief MEMS gyroscope |
| US11692825B2 (en) | 2020-06-08 | 2023-07-04 | Analog Devices, Inc. | Drive and sense stress relief apparatus |
| US11698257B2 (en) | 2020-08-24 | 2023-07-11 | Analog Devices, Inc. | Isotropic attenuated motion gyroscope |
| US11965740B2 (en) | 2020-08-24 | 2024-04-23 | Analog Devices, Inc. | Isotropic attenuated motion gyroscope |
| WO2023065834A1 (en) * | 2021-06-21 | 2023-04-27 | 西北工业大学 | Annular coupling system suitable for mems modal localization sensor |
| WO2024027326A1 (en) * | 2022-07-30 | 2024-02-08 | 华为技术有限公司 | Temperature control apparatus and related device |
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