CN104132768A - Silicon-silicon-bonding-based pressure sensor capable of isolating packaging stress - Google Patents
Silicon-silicon-bonding-based pressure sensor capable of isolating packaging stress Download PDFInfo
- Publication number
- CN104132768A CN104132768A CN201410306360.4A CN201410306360A CN104132768A CN 104132768 A CN104132768 A CN 104132768A CN 201410306360 A CN201410306360 A CN 201410306360A CN 104132768 A CN104132768 A CN 104132768A
- Authority
- CN
- China
- Prior art keywords
- bonding
- silicon
- chip
- stress
- pressure transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a silicon-silicon-bonding-based pressure sensor capable of isolating a packaging stress. The pressure sensor includes a chip layer and a support layer. A lug used for silicon-silicon bonding is etched on the surface of the support layer. Gaps exist between other areas of the support layer and the chip layer. The structure is capable of avoiding too much consideration of material selection (such as a packing substrate of low stress and an adhesive of low stress) so that high-efficiency thermal isolation is realized comparatively easily and larger shock can be resisted and thus the pressure sensor is wider in application occasions.
Description
Technical field
the invention belongs to silicon micro mechanical sensor technical field, be specifically related to a kind of pressure transducer of the insulation package stress based on Si-Si bonding.
Background technology
piezoresistive pressure sensor is because it is that DC element and the good linearity of tool are widely used.But piezoresistive transducer is not only to stress sensitive to be measured, also to thermal stress sensitivity.In order to improve the precision of sensor and to suppress hot zero shift, reduce not mate by material heat the thermal stress of bringing in encapsulation process and be very important.
as everyone knows, the encapsulation stress of MEMS sensor chip derives from encapsulating material and does not mate with the thermal expansivity of silicon.MEMS sensor silicon normally adopts various adhesives to be pasted on substrate, then makes it curing through certain temperature sintering.Because of the heat of material, not mate the thermal stress of introducing in encapsulation process apparent, and any type of stress in sensor sensing region all can exert an influence to the precision of sensor and degree of stability.For high precision, high temperature MEMS sensor, this thermal stress causing due to the coefficient of thermal expansion mismatch of encapsulating material and MEMS sensor chip is large especially on the impact of device performance, and this makes the stress isolation design of chip structure and encapsulation seem particularly important.Must take measures to reduce the thermal stress in sensitive element district.The method that tradition reduces thermal stress has following a few class: (1) selects the backing material of low thermal mismatching, with the approaching alloy material of the thermal expansivity of silicon as Covar (KOVAR), LTCC etc.; But the cost compare of this method is high.
(2) select the flexible splicing material of low stress as soft silica gel etc.; Use flexible adhesives to have the weak shortcoming of bonding strength, and flexible adhesives are not suitable for the application scenario of shear stress.
(3) thickness of increase chip, makes the responsive aspect of chip away from substrate binding face; Structure, adopt the supporting layer of high-aspect-ratio to connect sensing chip and encapsulating package, as shown in Figure 1, supporting layer and chip layer are by anode linkage mode bonding, and manufacture craft is simple, and cost is low, has higher strength of joint, and usable range is wider.Thicker supporting layer can discharge and isolate thermal stress, thereby this structure belongs to longitudinal isolation.Shortcoming is, in the time that supporting layer is not silicon materials, as used Pyrex, because anode linkage temperature is higher, can inevitably introduce residual thermal stress.In addition, at high pressure applications, pressure not only acts on sensitive diaphragm, and the stress that same purpose produces in the pressure of support layer surface can be passed to sensitizing range, and sensitivity and precision to sensor impact.Structure shown in Fig. 2 can further reduce thermal stress by the bond area that reduces supporting layer and shell, but also can reduce the bonding strength of chip simultaneously.
(4) discharge stress based on horizontal V-shape decoupling-structure, chip design structure in echelon; This structure has increased the complicacy of technique and has reduced and the bond area of shell, has reduced bonding strength.
(5) sensitive layer of chip is designed to cantilever beam structure or in the time being stained with sheet only the one end chip be fixed up.Weak point is to have increased chip area, and needs comparatively complicated etching technics to make cantilever beam structure.
Summary of the invention
the present invention seeks to: provide a kind of and reduce chip area, high temperature resistant, technique is simple, cost is low, the pressure transducer of the minimizing encapsulation stress based on Si-Si bonding of High Efficiency Thermal stress isolation.
technical scheme of the present invention is: a kind of pressure transducer of the insulation package stress based on Si-Si bonding, comprise chip layer and supporting layer, described support layer surface etches a projection for Si-Si bonding, gapped between other regions of described supporting layer and chip layer.
further, described projection is etched with deep trouth around.
further, the gap of described supporting layer and chip layer is 0.1-2um.
further, in the gap of described supporting layer and chip layer, be provided with at least one spur.
further, described projection is square or circular.
further, described projection is positioned at the corner of supporting surface.
further, the bonding area of described projection accounts for the 1%-10% of chip area, representative value 4%.
further, the etching depth of described deep trouth is 10-100um.
advantage of the present invention is:
the pressure transducer bonding region of this kind of structure is positioned over the corner of chip, by reducing bonding area and deep plough groove etched reducing do not mate because of material thermal expansion coefficient the thermal stress producing, this structure can be avoided the selection (as the bonding agent of the package substrate of low stress and low stress) of too much consideration material, in more easily realizing High Efficiency Thermal isolation, the impact of the anti-1000g of energy, for preventing the impact on structure in later stage lead key closing process intermediate gap, make a series of for preventing the excessive regmatic aculeolus protection of the bonding structure that causes of strain at supporting layer chip 1-2um gap area.Advantages such as although this structure have increased thickness, and this structure has high temperature resistant, and chip area is little, and cost is low, High Efficiency Thermal stress isolation, for high precision, high temperature MEMS sensor, effect is more outstanding, therefore has a wide range of applications occasion.
Brief description of the drawings
below in conjunction with drawings and Examples, the invention will be further described:
fig. 1 is the structural representation of the pressure transducer of the thickness of existing increase chip;
fig. 2 is the structural representation of the pressure transducer of the bond area of existing minimizing supporting layer and shell;
fig. 3 is the cut-open view that the present invention is based on the pressure transducer of the insulation package stress of Si-Si bonding;
fig. 4 is the thermal stress of pressure transducer and the graph of relation of bonding position that the present invention is based on the insulation package stress of Si-Si bonding;
fig. 5 is the thermal stress of pressure transducer and the graph of relation of bonding area that the present invention is based on the insulation package stress of Si-Si bonding;
fig. 6 is the thermal stress of pressure transducer and the graph of relation of the deep etching degree of depth that the present invention is based on the insulation package stress of Si-Si bonding;
fig. 7 is the curve map that the optimum dimension blockage that the present invention is based on the pressure transducer of the insulation package stress of Si-Si bonding is arranged on the isolation structure thermal stress variation with temperature of corner.
Embodiment
for making the object, technical solutions and advantages of the present invention more cheer and bright, below in conjunction with embodiment and with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these descriptions are exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, omitted the description to known features and technology, to avoid unnecessarily obscuring concept of the present invention.
embodiment: the pressure transducer of the insulation package stress based on Si-Si bonding as described in Figure 3, this structure is made up of chip layer 1 and supporting layer 2, going out a shape for the blockage 3(etching of Si-Si bonding in supporting layer 2 surface etch can determine according to the structure of sensor, for example supporting layer is square, the shape of etching can be square, supporting layer is circular, the shape of etching can be circular), etching one deep trouth 4 around blockage 3, make bonding plane be less than chip area, other regions of supporting layer 2 keep the gap of 0.1-2um with chip layer 1, for preventing the impact on structure in later stage lead key closing process intermediate gap, make a series of for preventing that the excessive regmatic little spur 5 of bonding that causes of strain from protecting structure at supporting layer chip 0.1-2um gap area.Supporting layer 2 is bonded on encapsulating package 7 by bonding agent 6, in view of the severe environment for use of High Temperature High Pressure, can use the shell encapsulation of TO form.
after chip layer 1 and supporting layer 2 bondings, to high-temp pressure sensor, use the TO lead frame of gold-tin alloy as the bonding whole chip of bonding agent agent and stainless steel.280 DEG C of gold-tin alloy bonding temps, i.e. whole assembly zero stress 280 DEG C time, along with temperature is cooled to room temperature, the thermal stress of generation is passed to chip layer sensitizing range.
for high precision, high temperature MEMS sensor, the thermal stress causing due to the coefficient of thermal expansion mismatch of encapsulating material and MEMS sensor chip is large especially on the impact of device performance, owing to being high-temp pressure sensor, supporting layer 2 chips are bonded on the shell 7 of steel matter by bonding agent 6AuSn alloy.Because the technological temperature of bonding agent is higher, and thermal expansivity between material is inconsistent, and thermal stress is inevitable.As an example of high-temp pressure sensor example, this isolation structure is analyzed below.
1, choosing of bonding position
bonding region can be placed on the Arbitrary Relative position on chip.Fig. 4 is in the time that the deep trouth degree of depth (50um) of bonding area (200x200um) and etching is constant, and the position in bonding region is to being passed to A on sensitive diaphragm, B, the impact of the thermal stress that C is 3.From figure, curve can be found out, along with bonding region is near the corner of chip, A, B, 3 thermal stress of locating of C all have obviously and reduce, and, in the time obtaining equal thermal stress isolation effect, compare bonding region is placed on to chip center, bonding region is placed on to corner and can obtains larger bonding area, thereby obtain larger bond strength.
2, the impact of bonding area on thermal stress
fig. 5 is chip layer and the impact of supporting layer bonding area size on piezoresistance sensitivity region thermal stress.Visible, if two-layer Direct Bonding, the thermal stress being produced by later stage encapsulation is being passed to sensitizing range and can introducing the stress of about 60MPa, and this,, for the maximum safe stress of silicon 300-400MPa, will certainly have a huge impact.For high-temp pressure sensor, if do not compensated, will reduce precision and the temperature characterisitic of sensor.
, from Fig. 5, also can find out, in the time that the height (etching depth) of blockage is consistent, along with reducing of bonding area, thermal stress obviously reduces meanwhile.Bonding area be the about chip area of 290x290um(4%) time, be reduced to about 0.03MPa in the thermal stress in sensor sensing district, compare Direct Bonding thermal stress and reduced by 10
3
magnitude, for ten thousand of the maximum normal stress value 300-400MPa of design/, can greatly improve the precision of sensor.If further bonding area is reduced, thermal stress will almost be isolated completely.
3, the impact of the deep etching degree of depth on structure
fig. 6 is the thermal stress of pressure transducer and the graph of relation of the deep etching degree of depth that the present invention is based on the insulation package stress of Si-Si bonding, as shown in Figure 6, deep etching darker, thermal stress isolation effect is better, in the time being highly greater than 50um, isolation effect is more or less the same, and considers the factors such as shock resistance, highly should be taken between 50-100um.
fig. 7 is the curve map that the optimum dimension blockage that the present invention is based on the pressure transducer of the insulation package stress of Si-Si bonding is arranged on the isolation structure thermal stress variation with temperature of corner.
in conjunction with above-mentioned analysis, get the isolation structure of 290x290x50um size, in Fig. 7, curve has shown 20
o
c-280
o
the variation of thermal stress in the temperature range of C, adopt after this thermal stress isolation structure, the variation of the thermal stress of bringing due to temperature variation is weakened greatly, although still have subtle change in different temperatures thermal stress, but can will be passed to the Thermal Stress Control in piezoresistance sensitivity region in our expectation value (0.03MPa) in the whole operating temperature range of high-temp pressure sensor, thereby not only improve the precision of sensor, also improved the temperature characterisitic of sensor.Meanwhile, on this basis, if further reduce bonding area and increase the deep etching degree of depth, can obtain better thermal stress isolation effect.
this method that reduces thermal stress has the plurality of advantages such as chip area is little, high temperature resistant, the low easy processing of cost, High Efficiency Thermal stress isolation, has a wide range of applications.
should be understood that, above-mentioned embodiment of the present invention is only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore any amendment of, making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in without departing from the spirit and scope of the present invention in the situation that.In addition, claims of the present invention are intended to contain whole variations and the modification in the equivalents that falls into claims scope and border or this scope and border.
Claims (8)
1. a pressure transducer for the insulation package stress based on Si-Si bonding, comprises chip layer and supporting layer, it is characterized in that, described support layer surface etches a projection for Si-Si bonding, gapped between other regions of described supporting layer and chip layer.
2. the pressure transducer of the insulation package stress based on Si-Si bonding according to claim 1, is characterized in that, described projection is etched with deep trouth around.
3. the pressure transducer of the insulation package stress based on Si-Si bonding according to claim 1, is characterized in that, the gap of described supporting layer and chip layer is 0.1-2um.
4. according to the pressure transducer of the insulation package stress based on Si-Si bonding described in claim 1 or 3, it is characterized in that, in the gap of described supporting layer and chip layer, be provided with at least one spur.
5. the pressure transducer of the insulation package stress based on Si-Si bonding according to claim 1, is characterized in that, described projection is square or circular.
6. according to the pressure transducer of the insulation package stress based on Si-Si bonding described in claim 1 or 2 or 5, it is characterized in that, described projection is positioned at the corner of supporting surface.
7. according to the pressure transducer of the insulation package stress based on Si-Si bonding described in claim 1 or 2 or 5, it is characterized in that, the bonding area of described projection accounts for the 1%-10% of chip area, representative value 4%.
8. the pressure transducer of the insulation package stress based on Si-Si bonding according to claim 2, is characterized in that, the etching depth of described deep trouth is 10-100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410306360.4A CN104132768B (en) | 2014-07-01 | 2014-07-01 | A kind of pressure sensor of the insulation package stress based on Si-Si bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410306360.4A CN104132768B (en) | 2014-07-01 | 2014-07-01 | A kind of pressure sensor of the insulation package stress based on Si-Si bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104132768A true CN104132768A (en) | 2014-11-05 |
| CN104132768B CN104132768B (en) | 2017-03-29 |
Family
ID=51805537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410306360.4A Active CN104132768B (en) | 2014-07-01 | 2014-07-01 | A kind of pressure sensor of the insulation package stress based on Si-Si bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104132768B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535055A (en) * | 2014-12-25 | 2015-04-22 | 苏州文智芯微系统技术有限公司 | Silicon-silicon bonded based packaging-stress-reduced micromechanical gyroscope |
| CN105182004A (en) * | 2015-09-06 | 2015-12-23 | 苏州大学 | Silicon-silicon bonding based micro mechanical accelerometer for reducing packaging stress |
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060179953A1 (en) * | 2005-02-16 | 2006-08-17 | Denso Corporation | Pressure sensing element and sensor incorporating the same |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微系统与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
| CN101271029A (en) * | 2008-05-13 | 2008-09-24 | 上海芯敏微系统技术有限公司 | Silicon piezoresistance type pressure transducer encapsulation structure based on substrates |
| CN101397121A (en) * | 2008-07-15 | 2009-04-01 | 北方工业大学 | Silicon nanowire pressure sensor, cantilever beam, production method and pressure measurement method thereof |
| CN102193001A (en) * | 2011-05-18 | 2011-09-21 | 中国电子科技集团公司第二十六研究所 | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof |
-
2014
- 2014-07-01 CN CN201410306360.4A patent/CN104132768B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060179953A1 (en) * | 2005-02-16 | 2006-08-17 | Denso Corporation | Pressure sensing element and sensor incorporating the same |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微系统与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
| CN101271029A (en) * | 2008-05-13 | 2008-09-24 | 上海芯敏微系统技术有限公司 | Silicon piezoresistance type pressure transducer encapsulation structure based on substrates |
| CN101397121A (en) * | 2008-07-15 | 2009-04-01 | 北方工业大学 | Silicon nanowire pressure sensor, cantilever beam, production method and pressure measurement method thereof |
| CN102193001A (en) * | 2011-05-18 | 2011-09-21 | 中国电子科技集团公司第二十六研究所 | SAW-MEMS (surface acoustic waves-micro electro mechanical system) acceleration sensor and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535055A (en) * | 2014-12-25 | 2015-04-22 | 苏州文智芯微系统技术有限公司 | Silicon-silicon bonded based packaging-stress-reduced micromechanical gyroscope |
| CN105182004A (en) * | 2015-09-06 | 2015-12-23 | 苏州大学 | Silicon-silicon bonding based micro mechanical accelerometer for reducing packaging stress |
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104132768B (en) | 2017-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Thin polysilicon gauge for strain measurement of structural elements | |
| US8833172B2 (en) | Pressure sensing device with stepped cavity to minimize thermal noise | |
| CN101825505B (en) | MEMS pressure sensitive chip and manufacturing method thereof | |
| CN102636298A (en) | Beam-film four-land structured micro-pressure high-overload sensor chip | |
| CN103674355B (en) | A kind of floated force-sensing sensor chip eliminating encapsulation stress and preparation method thereof | |
| Wang et al. | Package-friendly piezoresistive pressure sensors with on-chip integrated packaging-stress-suppressed suspension (PS3) technology | |
| CN107110729A (en) | Device for pressure measurement | |
| US9352955B2 (en) | MEMS pressure sensor with improved insensitivity to thermo-mechanical stress | |
| CN103759880B (en) | A kind of SOI absolute pressure Sensitive Apparatus adopting leadless packaging structure | |
| San et al. | Silicon–glass-based single piezoresistive pressure sensors for harsh environment applications | |
| CN104897333A (en) | MEMS (Micro-electromechanical Systems) pressure sensing element and manufacturing method therefor | |
| CN104132768A (en) | Silicon-silicon-bonding-based pressure sensor capable of isolating packaging stress | |
| JP5595145B2 (en) | Semiconductor dynamic quantity sensor | |
| CN107512698A (en) | A kind of preparation method of the accurate floated MEMS chip encapsulating structure of central supported | |
| CN110207885A (en) | Pressure sensor core, core manufacture and packaging method and pressure sensor based on upside-down mounting welding core | |
| Basov | High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa | |
| EP3515858B1 (en) | Method of manufacturing a sensor using anodic bonding | |
| CN112723301A (en) | High-frequency-response pressure sensor chip for aviation and preparation method thereof | |
| CN104280568A (en) | High-overload-resistant piezoelectric acceleration sensor and manufacturing method thereof | |
| CN108358160B (en) | Hoisting type MEMS device packaging structure capable of releasing stress | |
| CN203719813U (en) | SOI absolute pressure sensitive device employing no-leading-wire packaging structure | |
| CN105182004A (en) | Silicon-silicon bonding based micro mechanical accelerometer for reducing packaging stress | |
| CN203858052U (en) | Pressure sensitive component adopting ceramic metal tube shell axial sintering | |
| Sandvand et al. | Influence of glass-frit material distribution on the performance of precision piezoresistive MEMS pressure sensors | |
| Duqi et al. | A piezoresistive MEMS barometer with thermomecanical stress rejection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |