CN102163563A - 用于填充的环氧树脂制剂 - Google Patents

用于填充的环氧树脂制剂 Download PDF

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Publication number
CN102163563A
CN102163563A CN2010106249895A CN201010624989A CN102163563A CN 102163563 A CN102163563 A CN 102163563A CN 2010106249895 A CN2010106249895 A CN 2010106249895A CN 201010624989 A CN201010624989 A CN 201010624989A CN 102163563 A CN102163563 A CN 102163563A
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filled compositions
filler
aromatic hydrocarbons
substrate
weight
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CN2010106249895A
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CN102163563B (zh
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M·B·威尔逊
S·L·波提塞克
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Dow Global Technologies LLC
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Dow Global Technologies LLC
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/02—Polycondensates containing more than one epoxy group per molecule
    • C08G59/027—Polycondensates containing more than one epoxy group per molecule obtained by epoxidation of unsaturated precursor, e.g. polymer or monomer
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    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
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Abstract

公开了一种低粘度的、低至不含氯化物的包括二乙烯基苯二氧化物作为成分的环氧树脂制剂；其中该制剂可以用来生产毛细填充组合物。

Description

用于填充的环氧树脂制剂
技术领域
本发明涉及用于生产半导体电子封装材料的环氧树脂制剂，以及更具体的说是毛细填充密封剂。
背景技术
环氧树脂普遍用于制造半导体封装材料的电子工业中。目前用于半导体封装材料的环氧树脂制剂包括，例如，双酚F的高纯二缩水甘油醚或者双酚A的二缩水甘油醚以及像萘二酚的二缩水甘油醚或对氨基苯酚的三环氧化物的高性能或多功能树脂。为了可接受的加工性和后续的可靠性需要平衡已知环氧树脂的关键性能。这些性能包括粘度，总氯含量，填料用量(为了热膨胀系数(CTE)和系数修正)，粘附力，焊剂相容性，韧性，点胶性能，流动性，以及包括预处理、温度循环或震动、强加速应力测试(HAST)的封装等级可靠性。
传统的填充制剂研究高纯双酚F或双酚A环氧树脂以及高性能或多功能树脂的混合。高性能树脂的加入会提高混合产物的粘度，对制剂的加工性产生不利的影响，限制了制剂中微粒填料的可加入量和尺寸。电子封装设计趋向于更小，层叠以及高度线路布局对电子封装材料的热机械性能和加工性能提出了更高的要求。例如，用于电子封装的新型填充材料需要具有更低的CTE以抗衡热疲劳，而且新型热界面材料(TIMs)需要具有更强的导热性以冷却热源，在增加填料含量的同时保持低粘度。
许多电子封装材料是高填充材料。填充材料的性能主要取决于填料的类型和用量(或者说是填料在材料中的量)。通常，增加填料的用量会降低CTE，同时模数和导热性会提高。不幸的是，随着填料用量的增加材料的粘度也会升高。在这些填充材料用于电子封装的过程中，填充封装剂需要具有低粘度(例如，在点胶温度下低于0.7Pa-s)以满足加工以及实现无空隙的模具填充。因此，需要相对更高的使用温度以确保传统的高填充制剂具有足够的流动性。
典型的毛细填充制剂是将双酚A或双酚F的二缩水甘油醚和调节剂混合以改善，例如固化体系的玻璃化转变温度(Tg)的热机械性能。例如，美国专利No.7,482,201教导了使用862和
Figure BSA00000425057500022
828(哈雄专业化学公司(Hexion Specialty Chemicals))，以及
Figure BSA00000425057500023
MY-0510(哈特使满先进材料公司(Huntsman Advanced Materials))作为纳米填充密封剂。
Figure BSA00000425057500024
862是一种双酚F型环氧树脂。
Figure BSA00000425057500025
828是一种双酚A型环氧树脂，
Figure BSA00000425057500026
MY-0510是三缩水甘油基对氨基苯酚(4-(环氧乙烷-2-基甲氧基)-N，N-二(环氧乙烷-2-基甲基)苯胺)。美国专利No.7,279,223公开了许多脂肪族的、脂环族的以及芳香族的环氧树脂。传统的低至不含氯的脂环族树脂的使用由于主要是酐或路易斯酸固化剂的相配的固化化学而具有局限性。美国专利No.7,351,784教导了使用脂环族胺和碳烯作为毛细无流动填充制剂。所引用的具体脂肪族胺的结构为4-(2-氨丙基-2-基)-1-甲基环己胺和4，4′-亚甲基双(2-甲基环己胺)。
前述的环氧树脂是利用与酚羟基基团或者芳香胺的氨基反应的表氯醇生产得到的。在偶合过程中，不完全闭环的发生会导致产生非水溶性或水溶性氯。
树脂中的水解氯含量对设备或元件在可靠性测试过程中的性能有不利的影响，特别是在高湿度和高温度测试中，例如压力炉暴露测试(PCT)121℃/15psi蒸气压。在暴露于高湿度的测试中，水解氯会从固化的聚合物中分离并且形成引起设备腐蚀的高酸性物质。因此，在填充应用中使用碱性树脂并且不使用表氯醇或其它卤素反应物以得到期望的环氧树脂。
相对于传统的填充材料，用于毛细填充的电子封装材料需要具有低粘度和改进的热机械性能(CTE，Tg，模数，和某些情况下，导热性)的高填充材料。这种材料应当最好具有改善的加工性能和后续封装可靠性。另外，这种材料应当具有小于100ppm，更优选小于5ppm的总氯含量。
最终，电子工业上需要的制剂材料具有低CTE(例如，小于30ppm/℃)，高导热性(例如，大于0.7W/mK)，适中的模数(例如，3GPa-15GPa)以及填充密封剂适当的流动性(在20μm的缝隙中15-100秒穿过15mm)，特殊用途下在固化后调节Tg的能力(例如由25-300℃)，同时保持可接受的在25℃下小于10Pa-s以及在30℃-100℃之间小于1.0Pa-s的流变性能。
发明内容
因此，本发明的目的之一是开发出一种即使在含有相对大量的填料时也具有低粘度的环氧填充组合物，并且其可以使用众多环氧固化剂固化。更优选的是，这种填充组合物含有非常低的总氯含量。
本发明的一个具体实施方式是一种用于制备如半导体封装材料的电子封装材料的环氧树脂制剂，更具体的是包括二乙烯基芳烃二氧化物，例如1，4-双(环氧-2-基)苯/1，3-双(环氧-2-基)苯(聚合性的二乙烯基苯二氧化物或DVBDO)，作为组分之一的毛细填充密封剂。DVBDO的使用能够同时改善材料的加工性和后续可靠性，就现在的单体工艺和环氧制剂而言是无法达到如此效果的。
本发明提供了生产电气装置的方法，包括提供电子元器件和基底，其中电子元器件和基底之一具有多个焊接凸点，而另一个具有多个电焊盘；电子元器件和基底之间电连接；在电子元器件和基底之间形成填充组合物；和固化填充组合物；其中所述填充组合物包括二乙烯基芳烃双环氧化合物。二乙烯基芳烃二氧化物，例如二乙烯基苯二氧化合物的使用能够使树脂获得高填料加载量，高Tg值以及非常低的总氯含量。另外，二乙烯基芳烃二氧化物树脂与传统的低粘度脂环族环氧树脂不同，其可以使用多种固化剂。本发明在电子元器件和基底之间固化的填充物使得焊料粘合并且减少在热循环过程中焊料的接缝破损。
还提供了一种电气装置，包括用在电子元件和基底之间的填充组分与基底电连接的电子元件，其中填充组合物包括二乙烯基芳烃双环氧化合物的反应产物。
在另一个具体实施方式中，本发明提供一种填充组合物，包括二乙烯基芳烃双环氧化合物、固化剂和填料，其中基于组合物的总体积，当填料的含量在1-70体积％时，25℃下填充组合物具有0.005-100Pa-s的粘度。
本发明的另一个具体实施方式是制备上述环氧树脂制剂的方法。
附图说明
图1显示了本发明电气装置，例如覆晶式(flip chip)封装的横截面。
具体实施方式
除非有明确的定义，否则本说明书中的下列缩写的意思如下：psi＝磅每平方英寸；℃＝摄氏度；g/mol＝克每摩尔；ppm＝百万分之一份；rpm＝每分钟转数；pa-s＝帕斯卡-秒；MPa＝兆帕；GPa＝千兆帕；W/mK＝瓦特每米开尔文；CTE＝热膨胀系数；重量％＝重量百分比；体积％＝体积百分比；g＝克；mg＝毫克；μm＝微米。除非有其它定义，所有的含量是重量百分比以及所有的比率是摩尔比率。所有数值范围是包括端点的和可任意结合的，除非清楚地这些数值范围累计达到了100％。这里所述的范围包括端点。术语“二氧化物”和“二环氧化物”是可互换使用的。
电气装置可以按照本发明所述包括下列步骤的方法制备：提供电子元器件和基底，其中电子元器件和基底之一具有多个焊接凸点，而另一个具有多个电焊盘；电子元器件和基底之间电连接；在电子元器件和基底之间形成填充组合物；和固化填充组合物；其中所述填充组合物包括二乙烯基芳烃双环氧化合物。
可以使用本发明的方法将各种电气元器件贴附于各种基底上。合适的电子元器件包括，但不限于，模具、电容器、电阻器等。“模具”是指一种通过各种加工变形为所期望的集成电路设备的工件。模具通常为由半导体材料、非半导体材料或其混合物制备而成的圆件片。合适的基底包括，但不限于，印刷电路板和柔性电路。本发明所制备的电气装置还包括粘合基底的预装件。“预装件”是指被置于薄电路板上并且封装的集成电路。预装件典型地包括能够连接基底的在电路板底部的焊球。
电子元器件和基底之一具有多个焊接凸点，而另一个具有多个电焊盘。所述“焊接凸点”包括焊料块，焊球，插脚和支柱，如铜支柱。焊料块包括球栅格阵列和针栅格阵列。焊料块可以由任何一种适合的可焊材料组成，例如，但不限于，锡，锡-铅、锡-铋、锡-银、锡-银-铜、锡-铟和铜。优选使用的焊料块是锡、锡-铅、锡-银和锡-银-铜。锡-合金焊料块是典型的共熔混合物。例如合适的锡-银焊料块具有96.5％的锡和3.5％的银。焊料块可以通过任何一种传统的方法进行沉积，例如粘贴或电镀。由合金组成的焊料块可以根据合金直接进行处理，例如电镀Sn Ag焊料块，或者连续地沉积如锡的第一金属，并且之后沉积如银的第二金属至第一金属之上然后通过重熔金属形成合金。合适的电焊盘可以为任意一种适当的衬垫并且与基底或电气装置的表面，也可以是电气装置的基底的表面相齐。适合的电焊盘可以是铜、银、金或任何其它合适的金属。
使用中，焊料块和焊盘是用焊剂处理的以确保良好的可焊性。任何一种合适的焊剂都是可以使用的并且是在本领域技术人员的能力范围内。电子元器件和基底按照使焊料块和焊盘成一行的位置设置。之后加热所述装置使焊料重熔并且电连接(焊料)电子元器件和基底。焊料的具体重熔温度由焊料块的组成决定，是本领域技术人员所知道的。
在电子元器件被焊接到基底上后，填充组合物在电子元器件和基底之间充满。填充组合物也在焊接接缝周围充满。根据最终的用途而经由各种方法来施加填充组合物。例如，对于填充应用，典型的使用方法包括注射或熔管喷射。适合的喷射机是由阿斯特克(Asymtek)、阿诺得森公司(A Nordson Company)，或速线技术公司(Speedline Technologies)生产的。喷射阀门设计可以包括正位移、时间-压力、分散喷射或具有精确体积控制的阀门结构。本发明的填充组合物一般不需要使用真空来使其填充到电子元器件和基底之间以及焊接接缝周围。
一旦填充组合物被填充至电子元器件和基底之间，之后填充组合物被固化。组合物的固化可以在足够固化组合物的预定温度和预定时间下进行。具体的固化条件可以根据填充组合物中所使用的固化剂来确定。例如，固化温度通常在10℃-200℃之间；优选100℃-190℃；更为优选125℃-175℃。适宜的固化时间为1分钟-4小时，优选5分钟-2小时，更为优选10分钟-1.5小时。固化时间少于1分钟，在传统的加工条件下时间太短而无法确保进行足够的反应；而大于4小时，时间过长而不实用或经济。
优选地，固化本发明的填充组合物是通过加热其至75-100℃的初始温度持续2-90分钟，之后加热其至125-200℃的第二温度持续2-180分钟。优选地，初始温度为80-95℃，更为优选为80-90℃。填充组合物在初始温度的加热时间优选为5-90分钟，更为优选为15-60分钟。第二温度的优选范围为135-200℃，更为优选为150-180℃。填充组合物在第二温度的加热时间优选为10-150分钟，更为优选为20-150分钟，进一步更为优选为30-120分钟。
参照附图1，显示了本发明电气装置，例如覆晶式封装的横截面，总体上以数字10来表示，包括在下表面具有可选择焊球13的基底12。另外，电气装置10包括电子元器件14，例如模具，穿过焊接接缝15(由在电子元器件14上的焊料块和基底12上的焊盘形成)与基底12电连接，具有设置在电子元器件14和基底12之间的固化填充组合物11，其中固化填充组合物11包括二乙烯基芳烃双环氧化物的反应产物。
在最宽的范围内，本发明包括一种用于含有(a)二乙烯基芳烃二氧化物；(b)固化剂；(c)任选的催化剂的用在填充密封剂中的可固化环氧树脂组合物或制剂。本发明的环氧组合物或制剂包括作为具体实施方式的(1)含有二乙烯基芳烃二氧化物的可聚合、可固化的组合物；(2)含有二乙烯基芳烃二氧化物的部分固化组合物；以及(3)包含由上述(1)和(2)生成的二乙烯基芳烃二氧化物的固化组合物。本发明也涉及含有二乙烯基芳烃二氧化物的组合物的固化(也就是聚合)。另外，二乙烯基芳烃二氧化物中的一些杂质含量(小于约50％)是可预期的，其对于最终的性能不会产生很大影响。
本发明的填充组合物优点是低粘度、室温下的均匀液体，例如25℃下小于5.0Pa-s。固体、微粒材料，例如填料，可以与填充组合物相混以对未固化或固化的聚合物的物理性能进行各种改进。具有或不具有这种添加的固体材料，所述组合物填充小缝隙(例如，小于20μm)，无须高压、真空或加热至高温，但是如果需要同样也可以使用这些手段。使用填充组合物能够防止电子元器件损坏，其中组合物具有小于5ppm的低总氯含量，优选小于3ppm。“总”氯含量包括非水溶性氯和水溶性氯的含量。
在本发明的填充组合物的制备中，二乙烯基芳烃二氧化物，组分(a)，可以包括，例如任何一种取代的或未取代的在任意环位上具有两个乙烯基的芳烃核心。二乙烯基芳烃二氧化物的芳烃部分可以包括苯、取代的苯、环化苯、取代的环化苯、同系偶合苯、取代的同系偶合苯或其混合物。二乙烯基芳烃二氧化物的二乙烯基部分可以是邻位、间位或对位或其混合。附加的取代基可以由抗-H2O2基团构成，包括饱和烷基、芳基、卤素、硝基、异氰酸酯基，或RO-(其中R可以为饱和烷基或芳基)。环化苯可以包括例如萘、四氢化萘等。同系偶合(取代)苯可以包括例如联苯、联苯醚等。
用于制备本发明组合物的二乙烯基芳烃二氧化物通过下列的化学结构式I-IV来举例说明：结构式I
Figure BSA00000425057500072
结构式II
Figure BSA00000425057500073
结构式III
Figure BSA00000425057500074
结构式IV
在本发明二乙烯基芳烃二氧化物共聚单体的上述结构式I、II、III、IV中，R1、R2、R3和R4分别各自可以为氢、烷基、环烷基、芳基或芳烷基；或者抗-H2O2基团，包括例如卤素、硝基、异氰酸酯基、或RO基团，其中R可以为烷基、芳基或芳烷基；x是0-4的整数；y是大于或等于2的整数；x+y是小于或等于6的整数；z是0-6的整数；并且z+y是小于或等于8的整数；Ar是芳烃部分，包括例如1，3-亚苯基。另外R4可以为包括环氧、异氰酸酯基或任何反应基团的反应基团并且根据取代模式z是0-6的整数。
在一个具体实施方式中，本发明所用的二乙烯基芳烃二氧化物可以通过，例如在国际专利申请WO 2010/077483中描述的方法进行生产，在此通过参考的方式结合进来。本发明所用的二乙烯基芳烃二氧化物组合物同样也在，例如美国专利No.2924580中公开，在此通过参考的方式结合进来。
在另一个具体实施方式中，本发明所用的二乙烯基芳烃二氧化物可以包括，例如，二乙烯基苯二氧化物、二乙烯基萘二氧化物、二乙烯基联苯二氧化物，或二乙烯基联苯醚二氧化物及其混合物。
在本发明的一个优选实施方式中，填充组合物中用到的二乙烯基芳烃二氧化物包括二乙烯基苯二氧化物(DVBDO)。更优选地，二乙烯基芳烃二氧化物组分是通过下面的化学结构式V举例说明的二乙烯基苯二氧化物：
Figure BSA00000425057500081
结构式V
上述化合物DVBDO的化学式为C10H10O2；DVBDO的分子量为162.2；DVBDO的元素分析是：C，74.06；H，6.21；和O，19.73，具有81g/mol的环氧当量。
以下的结构式VI是本发明中DVBDO的优选化学结构式的具体实施例：
Figure BSA00000425057500082
结构式VI
以下的结构式VII是本发明中DVBDO的优选化学结构式的另一个具体实施例：
Figure BSA00000425057500091
结构式VII
当通过本领域已知的方法制备得到DVBDO时，可以获得三种异构体之一：邻位、间位和对位。因此，本发明包括单独一种上述举例的任何结构的DVBDO或者其混合物。上述结构式VI和VII分别表示间位(1，3-DVBDO)和对位DVBDO的异构体。邻位异构体是少见的；通常制备得到的DVBDO间位异构体(结构式VI)和对位异构体(结构式VII)的比率为9∶1-1∶9。作为一个具体的实施方式，本发明优选包括比率为6∶1-1∶6的结构式VI和结构式VII表示的异构体，在另一个具体实施方式中结构式VI和结构式VII表示的异构体的比率可以为4∶1-1∶4或2∶1-1∶2。
在本发明的另一个具体实施方式中，二乙烯基芳烃二氧化物可以含有一定量(例如小于20重量％)的取代烷烃。取代烷烃的用量和结构依赖于二乙烯基芳烃前驱体至二乙烯基芳烃二氧化物制备过程中所使用的加工方法。例如，通过二乙基苯(DEB)脱氢制备得到的二乙烯基苯可以含有一定量的乙基乙烯基苯(EVB)和DEB。与过氧化氢反应，EVB会产生乙基乙烯基苯一氧化物，而DEB不会改变。这些化合物的存在会使二乙烯基芳烃二氧化物的环氧当量与纯物质相比更高，但环氧树脂量在0-99％时是可以使用的。
在一个具体实施方式中，本发明所用的二乙烯基芳烃二氧化物包括，例如，二乙烯基苯二氧化物(DVBDO)，一种低粘度液态环氧树脂。本发明的方法中所用的二乙烯基芳烃二氧化物25℃下的粘度范围通常在0.001Pa-s～0.1Pa-s，优选在0.01Pa-s～0.05Pa-s，更为优选在0.01Pa-s～0.025Pa-s。
本发明所用的作为制剂的环氧树脂组分的二乙烯基芳烃二氧化物的浓度依赖于制剂中的其它成分，但是，环氧树脂组分通常在0.5重量％-100重量％，优选，1重量％-99重量％，更为优选2重量％-98重量％，进一步更为优选5重量％-95重量％。例如，制剂中DVBDO的浓度将依赖于制剂中的其它组分，但是通常，基于组合物的总重量DVBDO的浓度在1重量％-99重量％，优选5重量％-90重量％，最优选7重量％-60重量％。在本发明的体系的一个具体实施方式中，DVBDO是环氧树脂组分并且基于组合物的总重量其浓度为20重量％-80重量％。
在本发明最宽泛的范围中，硬化剂(固化剂或交联剂)或固化剂混合物(硬化剂的混合物)在本发明的填充组合物中使用。通常，本领域中任何一种公知的适用于固化(聚合)环氧树脂的硬化剂都是可以使用的。硬化剂的选择需要依赖于应用的需要。应用于本发明填充组合物中的硬化剂可以包括，但不限于，氰基胍、取代的胍、苯酚、胺、苯并恶嗪、酐、酰氨胺、聚酰胺、聚胺、芳族胺、聚酯、聚亚安酯、聚硫醇、尿素甲醛和三聚氰胺甲醛树脂，及其混合物。在一个具体实施方式中，本发明的填充组合物基本上不含有酐，优选不含有酐。
硬化剂的浓度依赖于化学计量因素(摩尔比)。典型的环氧化物与硬化剂的摩尔比为0.25-4，优选0.5-2，最优选0.9-1.1。
在本发明最宽泛的范围中，本发明的填充组合物可以选择性地使用催化剂。通常，任何一种本领域公知的适用于促进环氧树脂和硬化剂之间反应的均相或非均相催化剂都是可以使用的。催化剂包括，但不限于，咪唑、叔胺、膦配合物、路易斯(Lewis)酸或路易斯碱、过渡金属元素催化剂，及其混合物。在一个具体实施方式中，本发明的填充组合物基本上不含有路易斯酸催化剂，优选不含有路易斯酸催化剂。
本发明所用的催化剂包括例如像三溴化硼配合物的路易斯酸、像二氮杂双环十一烯和2-苯基咪唑的叔胺的路易斯碱、像四丁基溴化膦和四乙基溴化铵的季盐，以及像三苯基锑四碘化物和三苯基锑二溴化物的有机锑类卤化物，及其混合物。
当存在催化剂时，基于填充组合物的总重量催化剂的浓度通常为0.05重量％-10重量％，优选0.1重量％-5重量％，最优选0.15重量％-1重量％。催化剂的含量可以允许根据最终的应用做出调整。
本发明的填充组合物中可以加入填料以改善固化体系的热机械性能从而获得更好的元件可靠性。为了更好地匹配电子元器件和基底的CTE，填料的存在增加了固化填充组合物的模数以及减小了粘合剂(固化的填充组合物)的CTE。例如，制剂中可以包括一种或多种选择功能性或非功能性填料，例如熔融硅石、天然硅石、人造硅石、天然氧化铝、人造氧化铝、中空填料、三氢氧化铝、氢氧化铝氧化物、氮化硼、碳化硅、云母、铝颗粒、氧化锌、银、石墨、氮化铝、多铝红柱石、金、碳、碳纳米管、石墨烯、玻璃纤维/片、碳纤维，或其它有机或无机微粒填料，这些填料或者直接加入制剂中或者在制剂中形成。熔融硅石、天然硅石或人造硅石是优选的填料。可以选择性地对填料的表面进行处理以改善填料和聚合物的相互作用。在本发明的另一个具体实施方式中，加入到填充材料所用的DVBDO混合物中的硅石填料可以提高最终固化填充材料的断裂韧度。
填料的可接受粒径大小的范围通常可以为纳米至微米级。例如，填料的粒径大小可以在0.0005μm-500μm，优选0.100μm-100μm，更为优选0.01μm-30μm。
可接受的填料的形状包括，但不限于，盘状、纤维状、球状、针状、无定形的或其任意组合。不同大小和形状的填料的结合使用会对热扩散系数、模数、电和/或热传导具有增强效应。
本发明所用的填料可以在加入填充组合物之前或在制剂中形成的过程中原地选择性地对其表面进行处理。表面处理的示例包括脂肪酸、硅烷偶联剂、钛酸酯、锆酸盐或硅氮烷组合物。
本发明所使用的填料加载量可以不同。基于在组合物中的固体重量，填料的浓度通常为0重量％-99重量％，优选0.1重量％-95重量％，更为优选10重量％-90重量％，最为优选50重量％-80重量％。根据所希望的特性，体积的加载量可以为0-90体积％，优选0.1-90体积％，更为优选至多85体积％，更加优选为0.1-85体积％，进一步更为优选为1-85体积％以及最为优选1-70体积％。
众所周知，传统的环氧基填充组合物中需要的高填料加载量会引起许多技术上的变化，例如大幅增加填充组合物的粘度，降低在电子元器件和基底之间的组合物的流动性，以及需要更高的使用温度。焊料块和焊盘的不断收缩导致很难配制填料。已经发现，即使在高填料加载量的情况下，本发明的填充组合物仍然能够展现出低粘度和优秀的流动性。具体来说，本发明提供了一种包括二乙烯基芳烃双环氧化物、固化剂和填料的组合物，其中基于组合物的总体积，当填料的量为1-70体积％时，25℃下组合物具有0.005-100Pa-s的粘度。当填料的量为1-70体积％时，25℃下组合物优选地具有0.01-25Pa-s的粘度，更为优选具有0.01-10Pa-s的粘度。在一个具体地优选实施方式中，当填料的量为50-70体积％时，25℃下组合物优选地具有0.005-1Pa-s的粘度。在所述组合物中优选二乙烯基芳烃双环氧化物是二乙烯基苯二氧化物。本发明填充组合物的另一个优点是可以在室温或接近室温的条件下使用，该温度明显低于传统的填充组合物。
本发明的填充组合物有利地可以使用众多硬化剂以及组合物可以使用比传统填充组合物更多种的填料，例如纳米填料，因此本发明组合物的制剂具有宽泛的选择范围。本发明的填充组合物还具有低(例如，小于5ppm)卤化物含量，甚至不含卤化物。另外，由于本发明的填充组合物还允许高填料加载量，所以在使用过程中同样的流动率下填充组合物能够实现更低的CTE(例如在Tg以下小于30ppm/℃)或者具有更好的热导性(例如大于1.0W/mK)或者在同样的CET或热导率下具有更好的流动性。
本发明填充组合物中其它可选择的组分可以是本领域所公知的通常在树脂制剂中所使用的组分。例如，可选择组分可以包括加入到组合物中能够提高其应用性能(例如表面张力改性剂或流动辅助剂)、可靠性能(例如粘度促进剂)、反应率、反应的选择性，和/或催化剂寿命的组合物。
可以加入本发明填充组合物中的添加剂的分类包括例如，像不同于二乙烯基芳烃二氧化物的，即不同于组分(a)的环氧树脂的其它树脂、稀释剂、稳定剂、填料、增塑剂、催化减活剂、增韧剂等或其混合物。
本发明制剂中可使用的其它添加剂包括例如含卤化物或不含卤化物的阻燃剂；如氢氧化镁、溴化锌或金属茂的改善抗燃性能配合剂；包括例如丙酮、甲乙酮、丙二醇甲醚醋酸酯的可加工的溶剂；如改性有机硅烷(环氧化的、甲基丙烯化的、氨基化)、乙酰丙酮或含硫分子的粘合促进剂；如改性有机硅烷、Byk900系列和Byk W-9010、改性碳氟化合物的润湿或分散助剂；如Byk-A 530、Byk-A 525、Byk-A 555、Byk-A 560的脱气添加剂；如滑动剂和光泽添加剂(许多可以从百科化学(Byk-Chemie)公司得到)的表面改性剂；如聚苯砜、聚砜、聚醚半乳糖氨苯砜、聚偏二乙烯氟化物、聚醚酰亚胺、聚邻苯二甲基亚酰胺、聚苯并咪唑、丙烯酸、具有苯氧基的、尿烷的反应性或非反应性的热塑性树脂；如蜡的脱模剂；如异氰酸酯、异氰尿酸盐、氰酸酯、含丙烯基分子或其它乙烯基型不饱和化合物，和丙烯酸酯的改善聚合物性能的其它功能添加剂或预反应产物；及其混合物。
本发明中所使用的可选择添加剂的浓度范围可以为0重量％-99重量％，优选0.001重量％-95重量％，更为优选0.01重量％-60重量％，最优选0.05重量％-50重量％。
作为本发明填充组合物制剂的概括举例说明，填充制剂可以包括下列含量的组分：DVBDO(陶氏(DOW)化学公司)                    20-30重量％Kyahard AA pt(日本卡亚库(Nippon Kayaku))    10-20重量％Denka FB-ISDX硅石(登卡(Denka)公司)          45-75重量％Byk W-9010(百科化学(Byk Chemie))            0.5重量％Silwet 7608(GE硅树脂)                       0.5重量％Byk A-530(百科化学(Byk-Chemie))             0.5重量％硅烷Z-6040(道康宁(Dow Corning))             0.7重量％
制备用于半导体封装材料的低粘度(例如，在25℃下小于3.0Pa-s)，低总氯含量(例如小于5ppm)环氧树脂制剂的方法包括混合(a)二乙烯基苯二氧化物；(b)硬化剂；(c)选择性地，催化剂；和(d)选择性地，其它所需添加组分。例如，本发明的可固化环氧树脂制剂的制备是在真空或非真空下在RossPD混合器(查厘司洛氏(Charles Ross))中混合二乙烯基苯二氧化物、硬化剂、催化剂，和选择性地任何其它期望的添加剂完成的。任何一种上述选择性地合适的制剂添加剂，例如填料，可以在混合过程中或混合之前加入组合物中以形成组合物。
环氧树脂制剂的所有组分典型地在一个能够制备具有期望应用低粘度的有效环氧树脂组合物的温度下混合和分散。混合所有组分的温度通常可以在20℃-80℃之间，优选25℃-35℃之间。较低的混合温度有助于最小化树脂和固化组分的反应从而最大化制剂的可使用时间。
混合组分典型地储存在低温环境中以最大化保存期限。可接受的温度范围例如-100℃-25℃，更优选-70℃-10℃，进一步更优选-50℃-0℃。作为一个具体的实施方式的举例说明，温度可以为-40℃。
二乙烯基苯二氧化物(DVBDO)，本发明的环氧树脂，可以作为在最终制剂中形成环氧基质的唯一树脂使用；或者二乙烯基苯二氧化物树脂作为在最终制剂中的组分之一使用。例如环氧树脂可以作为添加的稀释剂使用。二乙烯基苯二氧化物的使用对可固化组合物的性能有改性作用并且最终的固化产物优于传统的缩水甘油醚、缩水甘油酯或缩水甘油胺环氧树脂。具体地说，DVBDO的使用使在25℃下具有相对低的粘度的同时具有相对高的填料加载量。
另外，二乙烯基苯二氧化物的使用提供了期望的低至无卤素的总卤素含量以保持在高湿度测试下和野外使用设备使用寿命期间的电气装置的可靠性。卤素含量，例如氯含量，通常小于500ppm；优选小于100ppm，更为优选小于5ppm。
本发明的固化填充组合物(也就是，由可固化组合物生成的交联产物)具有多种优于固化的传统环氧基填充组合物的性能。例如，本发明的固化填充组合物具有-55℃-300℃的玻璃化转变温度(Tg)。通常，树脂的Tg高于-60℃，优选高于0℃，更为优选高于10℃，进一步更为优选高于25℃，最优选高于50℃。低于-55℃，本发明所描述的工艺与现有技术相比不具有明显的优点；而高于200℃，在不包括不适于本发明应用范围的增韧工艺的情况下，本发明所描述的工艺通常会导致易碎的网状体系并且在低温下(例如，小于0℃)可能还会引起设备严重的热变形。优选地，经过ASTM D 3418，固化的本发明填充组合物具有25-300℃的玻璃化转变温度，更为优选50-250℃，最优选50-225℃。
由于在乙烯基环氧化的过程中排除了表氯醇，树脂中几乎不含水溶性氯或总氯。因此，本发明填充组合物在120℃下约60目颗粒的帕尔(Parr)弹式提取24小时后经过离子色谱法显示的水溶性氯含量为0.00001-5000ppm，优选0.00001-100ppm，最优选小于5ppm。
下列结构式显示了在传统缩水甘油醚反应中形成的各种产物和副产物，其导致了更高程度的总的和水溶性氯含量：
Figure BSA00000425057500151
本发明固化的填充组合物通过ASTM D 5045测量(室温下)展现出了高于1.0MPa.m1/2的断裂韧度值，优选高于1.7MPa.m1/2，更优选高于2.0MPa.m1/2(兆帕每米)。
本发明固化的填充组合物经过ASTM D 790在Tg下展现出了高于1GPa的弯曲模量，优选高于2GPa，更优选在3.5MPa-15GPa之间。
本发明固化的填充组合物经过ASTM D 5335在Tg下展现出了65ppm/℃，优选低于50ppm/℃的CTE。
本发明固化的填充组合物按照ASTM E 1131的热重分析在固化过程中展现出了小于10％的失重量。
在一个具体实施方式中，使用了二乙烯基芳烃双环氧化物衍生物的本发明环氧树脂制剂可以作为半导体封装材料的毛细填充密封剂来使用。环氧树脂制剂的使用可以获得相对高的填料加载量(例如，＞30体积％，如30-85体积％)、固化后的高Tg值(例如，＞90℃)，以及树脂所给予的非常低甚至不含的总氯含量(例如，＜5ppm)。另外，这种树脂不像传统的低粘度脂环族环氧树脂，其能够使用多种不同的硬化剂。相对低的氯含量是由于在制造分子的合成过程中不使用卤化媒介，例如表氯醇。实施例
下列实施例和对照例进一步详细地说明了本发明，但其对本发明的范围不构成限制。实施例1-3以及对照例A和B
进行一系列实验以探索填料加载量的影响以及所感兴趣的树脂的关键性能。对照例A和B以及实施例1-3按照如下步骤进行：
组合物的每种组分都置于一个有盖的75毫升(mL)聚丙烯塑料广口瓶中并且使用法太克公司(FlackTek)的
Figure BSA00000425057500161
DAC 150在3200转每分钟(rpm)下混合120秒。填料的加载量是固体的35重量％、50重量％和65重量％。实验的设计还包括将树脂的类型作为变量，使用D.E.R.TM 354(商业上由陶氏化学(Dow Chemical)公司可获得的，平均环氧当量(EEW)为174g/mol的双酚F型环氧树脂)；以及二乙烯基苯二氧化物(DVBDO)。关键在于以重量比1∶1混合两种树脂，同时使用芳族胺硬化剂，二乙基甲苯二胺(DETDA)来维持1∶1的化学计量平衡。
这些实施例中所用到的其它原料描述如下：Ethacure 100是商业上由阿倍马尔(Albemarle)公司可获得的DETDA；Byk-A 530是由百科化学德国公司(Byk-Chemie，Gmbh，Germany)生产的聚硅氧烷消泡剂；Byk W996是润湿辅助剂，其是由百科化学德国公司(Byk-Chemie，Gmbh)公司生产的一种具有酸性基团(71mg KOH/g的酸值)的聚合物；Silane Z-6040是由道康宁(Dow-Corning)生产的一种环氧功能性硅烷偶联剂；Modaflow是赛特表面专业公司(Ctyec Surface Specialties)生产的表面张力改性剂/流动辅助剂；以及Denka FB-ISDX是一种由得卡日本公司(Denka Co JP，Japan)生产的熔融的、人工合成的平均粒径约为1.5微米的球形硅石颗粒。Coat O sil 2810是来自莫门提夫(Momentive)的环氧封端的聚二甲基硅氧烷。
Figure BSA00000425057500162
D230是来自哈斯特满(Hunstman)公司的聚醚胺。Amicure PACM是来自Air
Figure BSA00000425057500163
的脂环族胺。MP15EF和MP8FS是来自他速莫日(Tatsumori)的硅石填料。Regal 400R是来自卡不特(Cabot)公司的碳黑的等级。Silwet L-7608是来自莫门提夫性能材料(Momentive Performance Materials)的有机硅烷表面张力改性剂。表I-制剂
Figure BSA00000425057500171
在Speedmixer中混合并且在约3000Pa下真空炉中抽气15分钟后，8克(g)每种试样放置到单独的铝制称量盘。称量盘被放置于150℃的炉子中60分钟，之后进入175℃炉子中90分钟。在冷却从铝制盘中移出的试样(毛坯)后用Buehler Isoment 1000锯剪切。从每一个毛坯上剪切下大约3mm x 3mm的小试样后，使用安装3mm探针的TA Instruments Q400热力学分析仪进行热力学分析(TMA)。分析步骤由一个组成部分组成；在0.05N的力下，伴随50mL/分钟的氮气吹尘，从室温(约25℃)以10℃/分钟的速度升温至275℃。之后使用Universal Analysis数据分析软件(商业上由塔仪器公司(TA Instruments)可得)来确定分析试样的玻璃化转变温度Tg(开始)和Tg下的CTE(α1CTE)。
使用装有35mm上盘和50mm低盘的TA Instruments ARES分析仪(TA Instruments)来测量混合试样的相对温度粘度。测量步骤由动态的以5℃/分钟的升温速率由25℃升至250℃的过程组成。
下列的表II包括了收集的填充组合物模型数据的概要。值得注意的是高Tg和低粘度的组合。DVBDO基试样的TMA的Tg比用D.E.R.TM354所制备得到的试样的Tg高大约70℃。另外，DVBDO试样在65％填料加载量下的最小粘度是由D.E.R.354所制备得到的试样的20％。还值得注意的是，在不使用任何催化剂的情况下D.E.R.354体系具有相对低的Tg。表II-性能
Figure BSA00000425057500191
实施例4-10
实施例4-10所进行的步骤与实施例1-3所描述的相同；并且包括下列原料：DVBDO，一种二氧化物，可得自陶氏化学(Dow Chemical)公司；
Figure BSA00000425057500192
506，一种聚酰胺硬化剂，商业可得自空气产品公司(Air Products)；
Figure BSA00000425057500193
D230，一种聚醚胺，商业可得自哈斯特满(Huntsman)公司；Silazane Z-6079(六甲基二硅亚胺)，商业可得自道康宁(Dow Corning)；MP-15EF-硅石填料，商业可得自他速莫日日本有限公司(Tatsumori Ltd，Japan)；和Silane Z-6040，一种环氧硅烷，商业可得自道康宁(Dow Corning)。
表III中所描述的实施例4-10的制剂是使用
Figure BSA00000425057500194
DAC150(法太得(FlackTed，Landrum，SC))按照下述方法混合的：
将DVBDO和MP 15EF置于一个有盖的75mL聚丙烯塑料广口瓶中。以3500rpm的转速混合50秒。加入Silane Z-6079并以3500rpm的转速混合120秒。加入硬化剂和Silane 6040并以3500rpm的转速混合60秒。之后试样放入真空炉中在25℃约3000Pa下试样脱气15分钟。表III-制剂
Figure BSA00000425057500201
在最后的混合步骤之后，使用TA Instruments AR2000流变仪分析制剂的试样。流变仪装有60mm，1度锥。测试步骤包括25℃在10sec-1下预剪切30秒，接着25℃在10sec-1下持续120秒，每2秒记录一次数据。记录的粘度值是最后10个数据的平均值。
大约9g每种试样放置到铝制称量盘并在85℃下固化45分钟，接着在175℃固化45分钟。固化的试样从炉中移出并恢复至室温，之后放置到塑料储存包中。
使用TA Instruments 2920Dual Cell DSC确定固化后试样的Tg。步骤包括在50mL/分钟氮气冲尘下以10℃/分钟的速率由25℃升至300℃。利用TAInstruments Universal Analysis数据分析软件外延切线法确定Tg。从每个固化的试样上切下一小片(约15mg)按照前述方法进行分析。
另外，使用TA Instruments Q400热力学分析仪来测量每个试样的CTE。Tg之下的数值(α1)和Tg之上的数值(α2)被呈现。步骤包括在50mL/分钟氮气冲尘下以5℃/分钟的速率由25℃升至300℃。结果记录于表IV。表IV-性能
Figure BSA00000425057500211

Claims (10)

1.一种生产电气装置的方法，包括：提供电子元器件和基底，其中电子元器件和基底之一具有多个焊接凸点，而另一个具有多个电焊盘；电子元器件和基底之间电连接；在电子元器件和基底之间形成填充组合物；和固化填充组合物；其中所述填充组合物包括二乙烯基芳烃双环氧化合物。
2.如权利要求1所述的方法，其中所述二乙烯基芳烃二氧化物是二乙烯基苯二氧化物。
3.如权利要求1所述的方法，其中填充组合物进一步包括固化剂。
4.如权利要求1所述的方法，其中填充组合物进一步包括含量至多为85体积％的填料。
5.如权利要求4所述的方法，其中填料的含量为50-70重量％并且25℃时填充组合物具有0.05-1Pa-s的粘度。
6.如权利要求1所述的方法，其中固化步骤包括：75-100℃的初始温度下加热填充组合物2-90分钟，之后在125-200℃的第二温度下加热填充组合物2-180分钟。
7.一种电气装置，包括由在电子元器件和基底之间的填充组合物电连接的电子元器件和基底，其中填充组合物包括二乙烯基芳烃双环氧化合物的反应产物。
8.如权利要求7所述的电气装置，其中填充组合物进一步包括填料。
9.一种组合物，包括二乙烯基芳烃双环氧化合物、固化剂和填料，其中基于组合物的总体积，当填料的含量在1-70体积％时，在25℃下填充组合物具有0.005-100Pa-s的粘度。
10.如权利要求9所述的组合物，其中二乙烯基芳烃双环氧化合物是二乙烯基苯二氧化物。
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