CN102163179A - 半导体存储器装置 - Google Patents
半导体存储器装置 Download PDFInfo
- Publication number
- CN102163179A CN102163179A CN2011100389590A CN201110038959A CN102163179A CN 102163179 A CN102163179 A CN 102163179A CN 2011100389590 A CN2011100389590 A CN 2011100389590A CN 201110038959 A CN201110038959 A CN 201110038959A CN 102163179 A CN102163179 A CN 102163179A
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- China
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- data
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- semiconductor memory
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7205—Cleaning, compaction, garbage collection, erase control
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010031797 | 2010-02-16 | ||
JP031797/2010 | 2010-02-16 | ||
JP2010206116A JP2011192260A (ja) | 2010-02-16 | 2010-09-14 | 半導体記憶装置 |
JP206116/2010 | 2010-09-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102163179A true CN102163179A (zh) | 2011-08-24 |
CN102163179B CN102163179B (zh) | 2015-05-06 |
Family
ID=43983367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110038959.0A Active CN102163179B (zh) | 2010-02-16 | 2011-02-16 | 半导体存储器装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8392476B2 (zh) |
EP (1) | EP2360595A1 (zh) |
JP (1) | JP2011192260A (zh) |
KR (1) | KR101277371B1 (zh) |
CN (1) | CN102163179B (zh) |
TW (1) | TWI515562B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104102456A (zh) * | 2013-04-15 | 2014-10-15 | 旺宏电子股份有限公司 | 存储器装置机器操作方法 |
CN106445397A (zh) * | 2015-07-28 | 2017-02-22 | 群联电子股份有限公司 | 存储器管理方法、存储器控制电路单元及存储器存储装置 |
CN110262986A (zh) * | 2018-03-12 | 2019-09-20 | 爱思开海力士有限公司 | 存储器控制器及其操作方法 |
CN111858577A (zh) * | 2019-04-29 | 2020-10-30 | 伊姆西Ip控股有限责任公司 | 存储管理的方法、设备和计算机程序产品 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10558705B2 (en) * | 2010-10-20 | 2020-02-11 | Microsoft Technology Licensing, Llc | Low RAM space, high-throughput persistent key-value store using secondary memory |
US8930614B2 (en) | 2011-07-29 | 2015-01-06 | Kabushiki Kaisha Toshiba | Data storage apparatus and method for compaction processing |
US9069657B2 (en) | 2011-12-12 | 2015-06-30 | Apple Inc. | LBA bitmap usage |
JP5674634B2 (ja) | 2011-12-28 | 2015-02-25 | 株式会社東芝 | コントローラ、記憶装置およびプログラム |
JP5687639B2 (ja) | 2012-02-08 | 2015-03-18 | 株式会社東芝 | コントローラ、データ記憶装置及びプログラム |
JP2013174972A (ja) * | 2012-02-23 | 2013-09-05 | Toshiba Corp | メモリシステム、コントローラ、メモリシステムの制御方法 |
JP5687648B2 (ja) * | 2012-03-15 | 2015-03-18 | 株式会社東芝 | 半導体記憶装置およびプログラム |
US20140032820A1 (en) * | 2012-07-25 | 2014-01-30 | Akinori Harasawa | Data storage apparatus, memory control method and electronic device with data storage apparatus |
US20140059271A1 (en) * | 2012-08-27 | 2014-02-27 | Apple Inc. | Fast execution of flush commands using adaptive compaction ratio |
JP2014171211A (ja) | 2013-02-06 | 2014-09-18 | Ricoh Co Ltd | 情報処理システム |
US20140250277A1 (en) * | 2013-03-04 | 2014-09-04 | Kabushiki Kaisha Toshiba | Memory system |
JP2015001908A (ja) * | 2013-06-17 | 2015-01-05 | 富士通株式会社 | 情報処理装置、制御回路、制御プログラム、および制御方法 |
WO2014203316A1 (ja) * | 2013-06-17 | 2014-12-24 | 富士通株式会社 | 情報処理装置、制御回路、制御プログラム、及び制御方法 |
JP2015001909A (ja) * | 2013-06-17 | 2015-01-05 | 富士通株式会社 | 情報処理装置、制御回路、制御プログラム、および制御方法 |
JP5967307B2 (ja) * | 2013-06-17 | 2016-08-10 | 富士通株式会社 | 情報処理装置、制御回路、制御プログラム、及び制御方法 |
US9304906B2 (en) | 2013-09-10 | 2016-04-05 | Kabushiki Kaisha Toshiba | Memory system, controller and control method of memory |
US20150261444A1 (en) * | 2014-03-12 | 2015-09-17 | Kabushiki Kaisha Toshiba | Memory system and information processing device |
KR102285462B1 (ko) * | 2014-03-26 | 2021-08-05 | 삼성전자주식회사 | 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템의 동작 방법 |
US9652382B1 (en) * | 2014-09-04 | 2017-05-16 | Sk Hynix Memory Solutions Inc. | Look-ahead garbage collection for NAND flash based storage |
US20160188233A1 (en) * | 2014-12-26 | 2016-06-30 | Mediatek Inc. | Method for interrupting cleaning procedure of flash memory |
US9891825B2 (en) * | 2015-01-23 | 2018-02-13 | Toshiba Memory Corporation | Memory system of increasing and decreasing first user capacity that is smaller than a second physical capacity |
US10210168B2 (en) | 2015-02-23 | 2019-02-19 | International Business Machines Corporation | Managing data in storage according to a log structure |
TWI554884B (zh) * | 2015-07-21 | 2016-10-21 | 群聯電子股份有限公司 | 記憶體管理方法、記憶體控制電路單元及記憶體儲存裝置 |
CN106897022B (zh) | 2015-12-17 | 2019-05-31 | 腾讯科技(深圳)有限公司 | 一种管理存储设备的方法及装置 |
KR102532581B1 (ko) * | 2016-03-17 | 2023-05-17 | 에스케이하이닉스 주식회사 | 메모리 장치를 포함하는 메모리 시스템 및 그의 동작 방법 |
JP6926866B2 (ja) * | 2017-01-20 | 2021-08-25 | 富士通株式会社 | ストレージ制御装置、およびストレージ制御プログラム |
JP6697410B2 (ja) * | 2017-03-21 | 2020-05-20 | キオクシア株式会社 | メモリシステムおよび制御方法 |
US10593409B2 (en) * | 2017-10-12 | 2020-03-17 | Distech Controls Inc. | Memory device comprising flash memory and method for controlling a write speed of a bus transmitting data for storage on the flash memory |
KR102447602B1 (ko) | 2017-10-25 | 2022-09-26 | 삼성전자주식회사 | 메모리 장치 및 그 동적 가비지 컬렉션 방법 |
US10552316B2 (en) * | 2018-06-29 | 2020-02-04 | Micron Technology, Inc. | Controlling NAND operation latency |
JP7467064B2 (ja) * | 2019-10-17 | 2024-04-15 | キオクシア株式会社 | メモリシステムおよびガベッジコレクション制御方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030110343A1 (en) * | 2001-12-11 | 2003-06-12 | Mitsubishi Denki Kabushiki Kaisha | File system including non-volatile semiconductor memory device having a plurality of banks |
CN1648879A (zh) * | 2004-01-28 | 2005-08-03 | 三星电子株式会社 | 自适应垃圾收集方法及设备 |
JP2006126975A (ja) * | 2004-10-26 | 2006-05-18 | Toshiba Corp | 情報端末装置とそのプログラム |
JP2007193883A (ja) * | 2006-01-18 | 2007-08-02 | Sony Corp | データ記録装置及び方法、及びデータ再生装置及び方法、並びにデータ記録再生装置及び方法 |
CN101178689A (zh) * | 2007-12-06 | 2008-05-14 | 浙江科技学院 | 一种NAND Flash存储器的动态管理方法 |
CN101233498A (zh) * | 2005-08-03 | 2008-07-30 | 桑迪士克股份有限公司 | 快闪存储器中利用直接数据文件存储的数据操作 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060095460A1 (en) * | 2004-10-29 | 2006-05-04 | International Business Machines Corporation | Systems and methods for efficiently clustering objects based on access patterns |
US7406597B2 (en) * | 2004-10-29 | 2008-07-29 | International Business Machines Corporation | Methods for efficiently authenticating multiple objects based on access patterns |
KR101089150B1 (ko) | 2005-08-03 | 2011-12-02 | 쌘디스크 코포레이션 | 스케쥴링된 리클레임 작동들을 갖는 비휘발성 메모리 |
US7861122B2 (en) * | 2006-01-27 | 2010-12-28 | Apple Inc. | Monitoring health of non-volatile memory |
US20070180186A1 (en) * | 2006-01-27 | 2007-08-02 | Cornwell Michael J | Non-volatile memory management |
KR100818797B1 (ko) * | 2006-10-19 | 2008-04-01 | 삼성전자주식회사 | 메모리 용량 조절 방법과 메모리 용량 조절 장치 |
-
2010
- 2010-09-14 JP JP2010206116A patent/JP2011192260A/ja active Pending
- 2010-09-20 US US12/885,941 patent/US8392476B2/en active Active
-
2011
- 2011-01-27 TW TW100103180A patent/TWI515562B/zh active
- 2011-02-15 EP EP11154492A patent/EP2360595A1/en not_active Withdrawn
- 2011-02-16 CN CN201110038959.0A patent/CN102163179B/zh active Active
- 2011-02-16 KR KR1020110013791A patent/KR101277371B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030110343A1 (en) * | 2001-12-11 | 2003-06-12 | Mitsubishi Denki Kabushiki Kaisha | File system including non-volatile semiconductor memory device having a plurality of banks |
CN1648879A (zh) * | 2004-01-28 | 2005-08-03 | 三星电子株式会社 | 自适应垃圾收集方法及设备 |
JP2006126975A (ja) * | 2004-10-26 | 2006-05-18 | Toshiba Corp | 情報端末装置とそのプログラム |
CN101233498A (zh) * | 2005-08-03 | 2008-07-30 | 桑迪士克股份有限公司 | 快闪存储器中利用直接数据文件存储的数据操作 |
JP2007193883A (ja) * | 2006-01-18 | 2007-08-02 | Sony Corp | データ記録装置及び方法、及びデータ再生装置及び方法、並びにデータ記録再生装置及び方法 |
CN101178689A (zh) * | 2007-12-06 | 2008-05-14 | 浙江科技学院 | 一种NAND Flash存储器的动态管理方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104102456A (zh) * | 2013-04-15 | 2014-10-15 | 旺宏电子股份有限公司 | 存储器装置机器操作方法 |
CN106445397A (zh) * | 2015-07-28 | 2017-02-22 | 群联电子股份有限公司 | 存储器管理方法、存储器控制电路单元及存储器存储装置 |
CN106445397B (zh) * | 2015-07-28 | 2019-07-09 | 群联电子股份有限公司 | 存储器管理方法、存储器控制电路单元及存储器存储装置 |
CN110262986A (zh) * | 2018-03-12 | 2019-09-20 | 爱思开海力士有限公司 | 存储器控制器及其操作方法 |
CN110262986B (zh) * | 2018-03-12 | 2023-05-16 | 爱思开海力士有限公司 | 存储器控制器及其操作方法 |
CN111858577A (zh) * | 2019-04-29 | 2020-10-30 | 伊姆西Ip控股有限责任公司 | 存储管理的方法、设备和计算机程序产品 |
CN111858577B (zh) * | 2019-04-29 | 2024-05-17 | 伊姆西Ip控股有限责任公司 | 存储管理的方法、设备和计算机程序产品 |
Also Published As
Publication number | Publication date |
---|---|
KR20110095193A (ko) | 2011-08-24 |
US20110202578A1 (en) | 2011-08-18 |
CN102163179B (zh) | 2015-05-06 |
EP2360595A1 (en) | 2011-08-24 |
KR101277371B1 (ko) | 2013-06-20 |
JP2011192260A (ja) | 2011-09-29 |
TWI515562B (zh) | 2016-01-01 |
TW201142591A (en) | 2011-12-01 |
US8392476B2 (en) | 2013-03-05 |
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TR01 | Transfer of patent right |
Effective date of registration: 20170728 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
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Effective date of registration: 20220126 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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