CN102144290A - 倒装芯片过模封装件 - Google Patents

倒装芯片过模封装件 Download PDF

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CN102144290A
CN102144290A CN2009801343699A CN200980134369A CN102144290A CN 102144290 A CN102144290 A CN 102144290A CN 2009801343699 A CN2009801343699 A CN 2009801343699A CN 200980134369 A CN200980134369 A CN 200980134369A CN 102144290 A CN102144290 A CN 102144290A
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heat sink
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K·德圭
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Altera Corp
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Abstract

本发明提供一种集成电路(IC)封装件，其具有封装衬底、布置在封装衬底上的IC以及通过粘性隔离件附连到衬底层的刚性支撑构件。封装衬底包括围绕着IC位于其上的多个去耦电容器。热沉布置在IC上方。刚性支撑构件为IC封装提供增强的结构支撑，并且刚性支撑构件的底表面和封装衬底之间存在充足空间以允许在刚性支撑构件的下方放置去耦电容器。

Description

倒装芯片过模封装件
背景技术
集成电路(IC)处于几乎全部现代数字系统的核心。随着半导体器件的使用变得更普遍，对芯片提出了越来越多的要求。因此挑战是使单个IC封装件具备更多的处理能力以满足消费者需求。
这个挑战已经通过使器件越来越小来满足。换句话说，器件甚至随着处理能力的增加而变得更小。这不可避免地产生与这些组件的封装有关的很多机会。在IC封装中较普通的问题是由于热膨胀系数(CTE)的不匹配以及封装件的盖子和主体之间的不良粘接引起的封装件变形。由于对功率的需要增加，因此将更多的去耦电容器装配到单个IC封装件也变得更加具有挑战性。
因此，很期望具有机械稳定封装的器件，其具有足够空间用于在封装衬底上放置去耦电容器，同时维持IC封装件的整体大小。简言之，IC封装件需要能够保持所有不同组件以满足对更多处理能力的不断增长的需要而不牺牲面积或者性能。
发明内容
本发明的不同实施例致力于满足产生在面积和性能方面机械平衡并且成本有效的IC封装件的需要。
在一个实施例中，集成电路被放置在封装衬底的表面上。多个去耦电容器被放置在封装衬底的表面上围绕集成电路(IC)。为了减少封装件变形并产生机械平衡的封装件结构，围绕IC的周围边缘的刚性支撑构件通过粘性隔离件固定到封装衬底。支撑构件被粘性隔离件抬升，从而去耦电容器能够放置在支撑构件下方封装衬底的表面上。
另一实施例进一步描述一种封装件结构，其中集成电路放置在衬底层上，热界面材料(TIM)布置在IC上方，且模具帽围绕IC和TIM。围绕的模具帽具有比IC和TIM组合的厚度更大的厚度。热沉放置在TIM和模具帽上方，热沉被成形为使得热沉的一部分足够厚以填充TIM顶部上被模具帽包围的凹陷。本领域技术人员将理解具有不同厚度的热沉允许减小IC的厚度而不使用更厚的热界面材料(TIM)。
在本发明的另一方面，提供一种封装集成电路的方法。该方法开始于将IC放置到封装衬底上。接着，多个去耦电容器被布置在封装衬底上并围绕IC。使用粘性隔离件，刚性支撑构件也被固定到封装衬底，从而支撑构件被抬升以允许去耦电容器被放置在支撑构件下方的封装衬底上。接着，模制化合物被注入到IC封装件中。
根据以下详细描述，结合所附的附图以及通过示例的方式例示本发明的原理，本发明的其它方面将变得明显。
附图说明
可以通过结合附图参照以下说明最好地理解本发明，其中：
图1示出根据本发明的一个实施例具有通过粘性隔离件抬升的刚性支撑构件的集成电路封装件；
图2例示根据本发明一个实施例的集成电路封装件的俯视图；
图3示出根据本发明的一个实施例具有刚性支撑构件的集成电路封装件，其中刚性支撑构件为去耦电容器布置在其下方提供充足空间；
图4示出根据本发明的一个实施例的具有基础热沉(pedestal heat sink)的集成电路封装件；
图5是例示根据本发明的一个实施例具有带通道侧部的基础热沉的封装的简化示意图；
图6例示根据本发明的半导体封装件的可替代实施例；
图7是例示根据本发明的一个实施例封装集成电路的方法操作的流程图，该方法将去耦电容器装配到IC封装件中而不增加IC封装件的大小。
具体实施方式
以下的实施例描述用于封装集成电路的方法和设备。然而，对于本领域技术人员来说，显而易见的是没有这些具体细节中的一些或者全部也可以实施本发明。在其它实例下，没有详细描述已知的处理操作以免不必要地混淆本发明。
此处描述的实施例提供降低封装件变形以及提高盖子对封装主体的粘性的技术。同时，在封装件中产生更多的空间用于放置去耦电容器而不增加整个IC封装件的大小。集成电路(IC)封装件中需要去耦电容器，因为它们提供电源滤波。去耦电容器用于通过比有源电源电路提供的更及时的方式提供或者控制瞬时电流。因此，在高性能系统中需要更多的去耦电容器。本发明的实施例通过致力于封装材料的热膨胀系数(CTE)不匹配来降低封装件变形。嵌入于封装件中的支撑构件(刚性支撑构件)产生更平衡的封装件结构以进一步消除封装件变形。所描述的实施例还通过增加封装件中盖子和模制材料之间的接触面积来确保盖子，即热沉，对封装件的更好的粘性。另外，盖子或者热沉被配置为具有不同厚度以支持IC的厚度变化而无需增加热界面材料层厚度。
图1例示根据本发明的一个实施例的无盖的集成电路(IC)封装件的截面图。集成电路(IC)110布置在封装衬底100的表面上。焊料堆150定位在封装衬底100的对应的衬底接触焊盘上。在布置于IC 110的周界以外的封装衬底100的周围区域上布置多个去耦电容器120。来自IC110的信号通过与封装衬底100的底表面上的接触焊盘附连的焊料堆160传递到IC封装件以外，例如到印刷电路板。刚性支撑构件(也称为支撑构件)140通过粘性隔离件130固定到封装衬底100的表面。在一个实施例中，支撑构件140是形状与封装衬底100的外周围区域一致的铜构件。粘性隔离件将刚性支撑构件140从封装衬底100的表面抬升约1mm以在封装衬底100上为去耦电容器120释放额外空间。
应理解图1的支撑构件140围绕IC 110的周边布置。支撑构件140可以由任意刚性材料构成，铜实施例是示例性的而非意在限制。在一个实施例中，支撑构件140、粘性隔离件130以及衬底层100具有类似的热膨胀系数(CTE)。粘性隔离件130具有适于为布置在封装衬底100的顶表面上的去耦电容器120提供空间的厚度，从而电容器可以放置在支撑构件140下方的衬底层100上。因此，用粘性隔离件130抬升支撑构件140在IC封装件上产生用于布置多个组件的更大空间。粘性隔离件可以由市场可得到的合适的热固性或者热塑性粘性材料构成。在一个实施例中这些粘性材料可以是酚醛树脂。在另一实施例中，粘性隔离件是具有相对高的触变指数的模板(stencil)可印刷粘性材料。本领域技术人员将理解触变指数是材料在两种不同速度下的粘度比率。可替代地，粘性隔离件可以是市场可得的环氧树脂模制化合物(mold compound)或者筑坝材料。在另一实施例中，粘性隔离件具有与环氧树脂模制化合物类似的CTE、玻璃转变温度(Tg)和杨氏模量，以提供增强的封装稳定性。
图2是根据本发明的一个实施例具有围绕集成电路的刚性支撑构件的集成电路封装件布局的俯视图的简化示意图。图2例示在IC 110周围的模具浇口(mode gate)220。在一个实施例中，模具浇口220可以用作在盖子或者热沉布置在IC封装件上方之后将模制化合物注入到IC封装件中的出口。在另一实施例中，模制化合物可以是填充封装件中在IC 110周围的区域的环氧树脂模制化合物。IC 110布置在封装衬底100的中心区域。在一个实施例中，支撑构件配置为使能接入模具浇口220。应理解去耦电容器可以围绕封装衬底100的周围区域布置，并且刚性支撑构件可以如此处详细描述地布置在去耦电容器上方以提供对封装件的额外支撑。
根据本发明的一个实施例，图3示出具有盖子和嵌入的刚性支撑构件的IC封装件，其中刚性支撑构件为去耦电容器布置在支撑构件下方提供足够的空间。通过粘性隔离件130附连到封装衬底100的顶表面的支撑构件140改善变形控制。由于支撑构件平衡封装衬底100和IC 110之间的系数不匹配，因此支撑构件140还产生更为机械平衡的结构。在一个实施例中，在IC 110被布置在封装衬底上之前，支撑构件140被固定到封装衬底100。如上所述，支撑构件140可以布置在粘性隔离件130上方。在一个实施例中，粘性隔离件130定位在封装衬底的拐角处，并且支撑构件是单片构件，其具有限定在中心区域用于容纳IC 110的空腔(cavity)。
图3还示出布置在IC 110上方的热界面材料(TIM)350。在一个实施例中，TIM 350由粉碎的银制成。然而，TIM 350可以是与应用兼容并且能够将所产生的热从IC 110传递到热沉300的任意合适的材料。TIM350用于填充IC 110和热沉300之间的缝隙以提高传热效率。如图3所示，TIM 350足够薄以利于有效的热管理，即，将热从IC 110传递到热沉300。布置在IC 110和TIM 350上方的热沉300在中心区域较厚。通过为热沉300提供较厚的中心区域并因而最小化TIM 350的层，热传递被优化。在一个实施例中，在模制化合物被注入到IC封装件中之前热沉300被附连到封装件。应理解可以基于IC 110的厚度调整热沉300的中心部分的厚度。即，布置在IC 110上方的热沉的中心部分的厚度可调整，从而TIM 350的厚度被最小化。在一个实施例中，IC 110的厚度是约0.77mm，而TIM 350层的厚度是约100微米。随着部件大小继续缩小，IC 110的厚度能够降到0.3mm或者更小。通过类似地增加热沉的中心部分，TIM 350层可以保持在相同厚度以优化IC 110和热沉300之间的热传递。
在根据本发明的另一实施例中，图4例示布置在衬底层100上的集成电路110和布置在IC 110上方的热界面材料(TIM)350。多个去耦电容器120围绕集成电路110布置在衬底100的表面上。模具帽440围绕IC 110，并且热沉300布置在IC 110和围绕的模具帽440上方。模具帽440比IC 110和TIM 350两者的组合厚度更厚。模具帽440通过比IC 110和TIM 350的高度更高形成限定在TIM 350和IC 110上方的凹陷。较厚的模具帽440和在IC 110上方具有较厚的中心部分的热沉300的组合降低封装件变形。热沉300具有比热沉的周围侧部更厚的中心部分。热沉300的中心部分布置在TIM 350上，填充其上的凹陷并且热沉300的侧部由围绕TIM 350和IC 110的模具帽440支撑。热沉300以消除具有较厚TIM 350的需要的方式被成形。由此，作为最小化TIM 350的厚度的结果，热扩散得到改善。在一个实施例中，TIM的厚度是约100微米，然而，该厚度，并不意味着受此限制，因为厚度可以改变。在另一实施例中，热沉300由无氧铜制成以提供高传导性和热能的有效的热扩散。然而，这是示例性的，并不意味着受此限制，因为热沉300可以是能够传导和扩散从IC 110产生的热的任意材料。
在又一实施例中，封装件盖子的侧部可以不同方式被成形以提供封装件盖子和围绕的模具帽之间的更好的粘合。在图5中，热沉300被示为具有在模具帽440上方布置的盖子的侧部的不均匀底表面444。热沉300的侧向延伸部分的不均匀底表面还可以称为有通道的、被开槽的、不规则、非平面或者非线性的。与参照图4所例示的具有均匀表面的盖子相比，侧向延伸部分的不均匀底表面提供热沉300和模具帽440之间的更大的接触面积。在一个实施例中，热沉300具有侧向延伸部分，其底表面充满(serrated with)多个凹槽，例如以锯齿形式。然而，应理解图5中所示的热沉300仅仅意在示例而不意在限制，因为增加热沉300和模具帽440之间的表面接触面积的任何配置可以包括在此处描述的实施例中。本领域技术人员将理解可以使用具有可替代形状的盖子，只要盖子以最大化盖子和模具帽之间的接触面积的方式被成形。应注意热沉300的侧向延伸部分和模具帽440之间的更大的接触面积减小IC封装件上的裂纹。
图6例示根据本发明的半导体封装件的可替代实施例。图6所示的实施例通过热沉300的可替代构造提供改进的变形控制。图6所示的IC封装件将热沉300描绘成具有沿着热沉300的周围区域延伸的嵌入的延伸部330。热沉300的延伸部330不延伸到IC封装件的边缘，并且嵌入到围绕集成电路110和热界面材料350的模具帽440中。嵌入的延伸部330通过延伸部330的顶、底和侧表面在模具帽440内的围绕提供增强的结构集成，从而降低封装件变形。图6所示的热沉300意在例示而不在限制，本领域技术人员将理解盖子的可替代侧部构造可以嵌入到模具帽440中。另外，尽管图1-图6提供了具有球栅阵列的倒装芯片封装件(flip chip package)，但是这非意指受此限制，因为此处描述的技术可以应用于可替代的封装构造。另外，图4-图6的实施例可以包括刚性支撑构件，并且模具帽可以如参照图3所示围绕刚性支撑被注入。
图7示出根据本发明的一个实施例的封装集成电路的方法操作，以将去耦电容器装配到IC封装件中而不增加IC封装件的大小。图7所示的封装方法降低封装件变形并且为IC封装件产生更平衡且更坚固的结构以承受由于封装件中包括的不同材料引起的压力。在操作700，集成电路被放置在封装衬底上。之后，在操作701，多个去耦电容器被布置在围绕集成电路的封装衬底的表面的周围区域上。在操作702，用粘性隔离件将刚性支撑构件固定到衬底层。粘性隔离件抬升支撑构件，从而去耦电容器可以布置在支撑构件下方的封装衬底的表面上。通过用粘性隔离件抬升支撑构件，更多的去耦电容器可以布置在封装衬底上而无需使用更大的衬底。之后，在操作703中，将盖子或者热沉布置在热界面材料上，其布置在集成电路上方。之后，模制化合物例如通过参照图2的模具浇口被注入到IC封装件中。模制化合物填充IC封装件以包围内部组件，即限定以上描述的模具帽。在操作704，环氧树脂模制化合物(EMC)优选用于模制化合物，但这是示例而不意在限制。在一个实施例中，刚性支撑构件和环氧树脂模制化合物的CTE相对地类似，例如在约15％内。在另一实施例中，粘性隔离件和环氧树脂模制化合物的CTE相对地类似，例如在约15％内。例如，管芯的CTE可以是3ppm，而更坚硬或者刚性支撑构件是约18ppm，当使用铜时，粘性隔离件和环氧树脂模制化合物具有相对类似的CTE，例如约16-18ppm。
尽管以具体顺序描述了方法操作，但是应当理解可以在操作之间进行其它维护操作，或者可以调整操作，使得它们在略微不同的时间发生，只要覆盖操作的处理以期望的方式执行。
尽管为了理解的清楚，已经在一定程度上详细描述了前述发明，但是显然可以在所附的权利要求的范围内进行某些变化和修改。因此，这些实施例被认为是例示性的而不是限制性的，并且本发明不限制于此处给出的细节，而是可以在所附的权利要求的范围和等同物内修改。

Claims (20)

1.一种集成电路封装件，包括：
集成电路(IC)；
封装衬底，其上布置所述集成电路，所述封装衬底具有布置在其上的多个去耦电容器；
围绕所述集成电路的周围边缘的支撑构件，所述支撑构件通过粘性隔离件固定到所述封装衬底，所述粘性隔离件配置为使得芯片电容器能够布置在所述支撑构件的表面下方。
2.根据权利要求1所述的集成电路封装件，其中所述支撑构件由铜构成，并且所述粘性隔离件是模板可印刷粘性材料。
3.根据权利要求1所述的集成电路封装件，还包括：布置在所述集成电路的顶表面上的热界面材料(TIM)；以及布置在所述热界面材料上方的热沉。
4.根据权利要求3所述的集成电路封装件，其中所述热沉的底表面的中心部分朝所述TIM的顶表面向外延伸，所述热沉的中心部分比所述热沉的周围区域厚。
5.根据权利要求1所述的集成电路封装件，其中所述支撑构件是刚性的并且由铜构成，并且其中所述粘性隔离件被布置在所述封装衬底的表面的拐角上。
6.一种集成电路封装件，包括：
集成电路(IC)，其具有布置在所述集成电路的表面上方的热界面材料(TIM)；
封装衬底，其上布置所述集成电路，所述封装衬底具有布置在其上的多个去耦电容器；
沿着所述封装衬底的周围边缘布置并且围绕所述集成电路的模具帽，其中所述模具帽具有比所述集成电路和热界面材料的组合高度更大的高度，由此在所述热界面材料上方和所述模具帽的侧壁之间形成凹陷；以及
布置在所述集成电路上方的热沉，其中从所述热沉延伸的侧部比所述热沉的中心部分薄。
7.根据权利要求6所述的集成电路封装件，其中从所述热沉延伸的所述侧部被嵌入到所述模具帽中。
8.根据权利要求6所述的集成电路封装件，其中所述热界面材料由粉碎的银构成。
9.根据权利要求6所述的集成电路封装件，其中从所述热沉延伸的所述侧部的底表面被布置在所述模具帽上方。
10.根据权利要求9所述的集成电路封装件，其中从所述热沉延伸的所述侧部的所述底表面被不规则成形，以增加与所述模具帽的接触面积。
11.根据权利要求6所述的集成电路封装件，其中所述模具帽由环氧树脂模制化合物构成。
12.根据权利要求6所述的集成电路封装件，还包括：通过多个粘性隔离件被固定到所述封装衬底的刚性支撑构件。
13.根据权利要求12所述的集成电路封装件，其中所述刚性支撑构件下方的高度大于所述去耦电容器的高度。
14.一种集成电路(IC)的封装方法，包括：
将所述集成电路布置到封装衬底上；
将多个去耦电容器布置在所述集成电路的周界外的所述封装衬底上；
用粘性隔离件将刚性支撑构件固定到所述封装衬底，所述粘性隔离件抬升所述刚性支撑构件以使得所述去耦电容器能够被布置在所述支撑构件下方的所述封装衬底上；以及
围绕所述集成电路的周界注入模制化合物。
15.根据权利要求14所述的方法，还包括：将热界面材料(TIM)布置在所述集成电路上；以及
将热沉固定到所述热界面材料上。
16.根据权利要求15所述的方法，其中注入所述模制化合物包括将所述热沉的侧向延伸部分嵌入到所述模制化合物中。
17.根据权利要求14所述的方法，其中所述模制化合物的高度大于所述集成电路和所述热界面材料的组合高度。
18.根据权利要求15所述的方法，其中所述热沉的侧向延伸部分被固定到所述模制化合物的顶表面。
19.根据权利要求18所述的方法，其中布置在所述模制化合物上方的所述侧向延伸部分的底表面被不规则成形。
20.根据权利要求14所述的方法，其中所述刚性支撑构件被布置在所述封装衬底的外周围区域上方。
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