CN102138185B - 包含耐溅射材料的极端紫外线辐射反射元件 - Google Patents
包含耐溅射材料的极端紫外线辐射反射元件 Download PDFInfo
- Publication number
- CN102138185B CN102138185B CN200980126444.7A CN200980126444A CN102138185B CN 102138185 B CN102138185 B CN 102138185B CN 200980126444 A CN200980126444 A CN 200980126444A CN 102138185 B CN102138185 B CN 102138185B
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- Prior art keywords
- extreme
- layer
- potpourri
- radiation
- reflecting element
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 230000005855 radiation Effects 0.000 title claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 239000011733 molybdenum Substances 0.000 claims abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 5
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims abstract description 3
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 3
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 3
- 239000010439 graphite Substances 0.000 claims abstract description 3
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 239000010955 niobium Substances 0.000 claims abstract description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- -1 phosphide Chemical compound 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 3
- 239000010948 rhodium Substances 0.000 claims abstract description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052713 technetium Inorganic materials 0.000 claims abstract description 3
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000000835 fiber Substances 0.000 claims abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000002310 reflectometry Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- 230000004992 fission Effects 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims description 2
- 238000000386 microscopy Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08104648 | 2008-07-07 | ||
| EP08104648.4 | 2008-07-07 | ||
| PCT/IB2009/052855 WO2010004482A1 (en) | 2008-07-07 | 2009-07-01 | Extreme uv radiation reflecting element comprising a sputter-resistant material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102138185A CN102138185A (zh) | 2011-07-27 |
| CN102138185B true CN102138185B (zh) | 2015-09-09 |
Family
ID=41151943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980126444.7A Active CN102138185B (zh) | 2008-07-07 | 2009-07-01 | 包含耐溅射材料的极端紫外线辐射反射元件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8693090B2 (enExample) |
| EP (1) | EP2297746A1 (enExample) |
| JP (1) | JP2011527436A (enExample) |
| CN (1) | CN102138185B (enExample) |
| WO (1) | WO2010004482A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5886279B2 (ja) | 2010-06-25 | 2016-03-16 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置およびリソグラフィ方法 |
| WO2012041697A1 (en) * | 2010-09-27 | 2012-04-05 | Carl Zeiss Smt Gmbh | Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective |
| CN102621815B (zh) * | 2011-01-26 | 2016-12-21 | Asml荷兰有限公司 | 用于光刻设备的反射光学部件及器件制造方法 |
| DE102012207125A1 (de) | 2012-04-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zum Optimieren eines Schutzlagensystems für ein optisches Element |
| US9696467B2 (en) * | 2014-01-31 | 2017-07-04 | Corning Incorporated | UV and DUV expanded cold mirrors |
| CA2974507C (en) * | 2015-03-19 | 2020-01-07 | Halliburton Energy Services, Inc. | Mesh reinforcement for metal-matrix composite tools |
| US10128016B2 (en) * | 2016-01-12 | 2018-11-13 | Asml Netherlands B.V. | EUV element having barrier to hydrogen transport |
| CN109370271B (zh) * | 2018-10-29 | 2021-05-25 | 山东建筑大学 | 一种新型的耐辐照空间固体润滑剂涂层及制备方法 |
| EP3779525B1 (en) * | 2019-08-13 | 2024-01-03 | Istituto Nazionale di Astrofisica | Method for applying a carbon-based reflective overcoating on a grazing incidence optical unit |
| CN116165734B (zh) * | 2023-03-01 | 2025-12-02 | 苏州江泓电子科技有限公司 | 一种反射镜及其制备方法和应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1675164A1 (en) * | 2003-10-15 | 2006-06-28 | Nikon Corporation | Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system |
| CN101088031A (zh) * | 2004-12-23 | 2007-12-12 | 弗劳恩霍弗实用研究促进协会 | 用于euv光谱区域的热稳定的多层的反射镜 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433988A (en) | 1986-10-01 | 1995-07-18 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| JPH02238400A (ja) * | 1989-03-13 | 1990-09-20 | Nippon Telegr & Teleph Corp <Ntt> | 多層膜 |
| TW561279B (en) | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
| US6664554B2 (en) | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
| US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
| AU2002318192A1 (en) | 2001-07-03 | 2003-01-21 | The Regents Of The University Of California | Passivating overcoat bilayer |
| US7234064B2 (en) | 2002-08-16 | 2007-06-19 | Hx Technologies, Inc. | Methods and systems for managing patient authorizations relating to digital medical data |
| US7420653B2 (en) | 2003-10-02 | 2008-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly |
| US7193228B2 (en) | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| GB0426036D0 (en) | 2004-11-26 | 2004-12-29 | Boc Group Plc | Protection of surfaces exposed to charged particles |
| JP2006153528A (ja) | 2004-11-26 | 2006-06-15 | Canon Inc | 軟ｘ線多層膜反射鏡、軟ｘ線多層膜反射鏡による投影光学系を備えた露光装置 |
| JP2006332153A (ja) * | 2005-05-24 | 2006-12-07 | Hoya Corp | 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法 |
| US7599112B2 (en) | 2005-10-11 | 2009-10-06 | Nikon Corporation | Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same |
| JP4703354B2 (ja) * | 2005-10-14 | 2011-06-15 | Ｈｏｙａ株式会社 | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク |
| JP2008109060A (ja) * | 2005-11-10 | 2008-05-08 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクの多層反射膜を成膜する方法、ならびにｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| US20080153010A1 (en) * | 2006-11-09 | 2008-06-26 | Asahi Glass Company., Ltd. | Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography |
| US7875863B2 (en) | 2006-12-22 | 2011-01-25 | Asml Netherlands B.V. | Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method |
-
2009
- 2009-07-01 WO PCT/IB2009/052855 patent/WO2010004482A1/en not_active Ceased
- 2009-07-01 JP JP2011517284A patent/JP2011527436A/ja active Pending
- 2009-07-01 CN CN200980126444.7A patent/CN102138185B/zh active Active
- 2009-07-01 EP EP09786493A patent/EP2297746A1/en not_active Withdrawn
- 2009-07-01 US US13/000,674 patent/US8693090B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1675164A1 (en) * | 2003-10-15 | 2006-06-28 | Nikon Corporation | Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system |
| CN101088031A (zh) * | 2004-12-23 | 2007-12-12 | 弗劳恩霍弗实用研究促进协会 | 用于euv光谱区域的热稳定的多层的反射镜 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2297746A1 (en) | 2011-03-23 |
| JP2011527436A (ja) | 2011-10-27 |
| US8693090B2 (en) | 2014-04-08 |
| US20110096428A1 (en) | 2011-04-28 |
| WO2010004482A1 (en) | 2010-01-14 |
| CN102138185A (zh) | 2011-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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