CN102136480B - Eeprom器件 - Google Patents
Eeprom器件 Download PDFInfo
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- CN102136480B CN102136480B CN 201010027349 CN201010027349A CN102136480B CN 102136480 B CN102136480 B CN 102136480B CN 201010027349 CN201010027349 CN 201010027349 CN 201010027349 A CN201010027349 A CN 201010027349A CN 102136480 B CN102136480 B CN 102136480B
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- oxide film
- silicon oxide
- silicon
- tunnelling
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Abstract
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Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201010027349 CN102136480B (zh) | 2010-01-21 | 2010-01-21 | Eeprom器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201010027349 CN102136480B (zh) | 2010-01-21 | 2010-01-21 | Eeprom器件 |
Publications (2)
Publication Number | Publication Date |
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CN102136480A CN102136480A (zh) | 2011-07-27 |
CN102136480B true CN102136480B (zh) | 2013-03-13 |
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CN 201010027349 Active CN102136480B (zh) | 2010-01-21 | 2010-01-21 | Eeprom器件 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108735753B (zh) * | 2018-07-18 | 2023-10-13 | 长鑫存储技术有限公司 | 非易失性半导体存储器件 |
CN109741770A (zh) * | 2018-12-29 | 2019-05-10 | 联想(北京)有限公司 | 一种存储装置、处理器和电子设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0573164A1 (en) * | 1992-06-01 | 1993-12-08 | National Semiconductor Corporation | Full feature high density EEPROM cell with poly tunnel spacer and method of manufacture |
US6617639B1 (en) * | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
CN101471384A (zh) * | 2007-12-28 | 2009-07-01 | 东部高科股份有限公司 | 非易失性存储器件及其制造方法 |
CN101523613A (zh) * | 2007-07-20 | 2009-09-02 | 赛普拉斯半导体公司 | 非易失性电荷俘获存储器件的氘化薄膜封装结构 |
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2010
- 2010-01-21 CN CN 201010027349 patent/CN102136480B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0573164A1 (en) * | 1992-06-01 | 1993-12-08 | National Semiconductor Corporation | Full feature high density EEPROM cell with poly tunnel spacer and method of manufacture |
US6617639B1 (en) * | 2002-06-21 | 2003-09-09 | Advanced Micro Devices, Inc. | Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling |
CN101523613A (zh) * | 2007-07-20 | 2009-09-02 | 赛普拉斯半导体公司 | 非易失性电荷俘获存储器件的氘化薄膜封装结构 |
CN101471384A (zh) * | 2007-12-28 | 2009-07-01 | 东部高科股份有限公司 | 非易失性存储器件及其制造方法 |
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Publication number | Publication date |
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CN102136480A (zh) | 2011-07-27 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |