CN102133775A - Method for installing crystalline silicon briquettes - Google Patents
Method for installing crystalline silicon briquettes Download PDFInfo
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- CN102133775A CN102133775A CN2011100077052A CN201110007705A CN102133775A CN 102133775 A CN102133775 A CN 102133775A CN 2011100077052 A CN2011100077052 A CN 2011100077052A CN 201110007705 A CN201110007705 A CN 201110007705A CN 102133775 A CN102133775 A CN 102133775A
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- crystalline silicon
- silicon blocks
- silico briquette
- gauze
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Abstract
The invention belongs to the photovoltaic or semiconductor field, and relates to a method for installing crystalline silicon briquettes, in particular relates to a method for installing a plurality of silicon briquettes which are cut simultaneously. The technical scheme adopted by the invention is as follows: the silicon briquettes are installed in a staggered mode, the staggered silicon briquettes are perpendicular to a wire-mesh, the silicon briquettes are not aligned, and at least one silicon briquette at the two ends of the wire-mesh is 1-100 mm protruded from the wire-mesh. Through the utilization of the installation mode above, the cutting productivity of a single cutting machine can be improved, the vibration of the wire-mesh can be effectively prevented, and the production of unqualified silicon briquettes having the shortcomings such as broken edges, unfilled corners, TTV, creases, and the like can be reduced.
Description
Technical field
The present invention relates to the installation method of a kind of crystalline silicon blocks of photovoltaic or semiconductor applications, relate in particular to the installation method that a kind of a plurality of silico briquette cuts simultaneously.
Background technology
In recent years, the photovoltaic industry development is rapid, and industry is also increasing to the demand of silicon chip.In the prior art silico briquette being processed into the silicon chip major part is to adopt the mode of multi-thread cutting, this multi-thread cutting mode mainly is to utilize steel wire to drive the slurry of being made up of silicon carbide abrasive and cutting liquid silico briquette is cut, therefore in whole cutting process, steel wire, carborundum and cutting liquid become three big main consumptive materials of silicon chip processing.Want to reduce cutting cost, must improve unit cutting output, improve yield rate.In the process of cutting because the vibrations of gauze can cause wire jumper, thereby produce bad silicon chip such as some super thick, ultra-thin, TTV, especially at incoming line or mouthful gauze vibrations to occur more serious, the easier silicon chip that causes collapses bad phenomenon such as limit, unfilled corner.
About how reducing gauze vibrations in the silicon chip cutting process, improve slicing yield, existing both at home and abroad relevant bibliographical information, as publication number is that the Chinese patent of CN101554757A discloses a kind of cutting method of crystalline silicon blocks, the method that this invention is adopted is that the both ends of the surface to crystalline silicon blocks polish flat before the crystalline silicon blocks cutting, the wire saw equidistant parallel is laid, and width is less than the length that is cut crystalline silicon blocks.By technical scheme of the present invention, improved " climbing " phenomenon in the crystalline silicon blocks cutting process, solved the broken silicon wafers that produces in the crystalline silicon blocks cutting process preferably and fallen into wire saw net or guide wheel and cause broken string, wire jumper problem.
Publication number is that the Chinese patent of CN101879757A discloses the installation method of a kind of crystal bar in multi-line cutting machine, this method is when crystal bar is installed, make the end alignment of two crystal bars earlier, the other end that will be positioned at two crystal bars of feed line one side afterwards exceeds gauze slightly and gets final product, and adopts this method can reduce the substandard products that produce because of wire jumper even broken string.
Summary of the invention
The method that the object of the present invention is to provide a kind of crystalline silicon blocks to install adopts this method can cut a plurality of crystalline silicon blocks simultaneously, and can reduce the gauze vibrations, improves the section yields.
Technical scheme of the present invention is:
The method that a kind of crystalline silicon blocks is installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 1cm.
The method that a kind of crystalline silicon blocks is installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze two ends have at least the end face of a silico briquette to go out gauze is 1-100mm.
The method that a kind of crystalline silicon blocks is installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze two ends have at least the end face of a silico briquette to go out gauze is 5-20mm.
The method that a kind of crystalline silicon blocks is installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, it is characterized in that: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed is spaced apart 5-10cm.The silico briquette installed of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze two ends have at least the end face of a silico briquette to go out gauze is 2-6mm.
The method that a kind of crystalline silicon blocks is installed, wherein: described crystalline silicon blocks is a long silico briquette that is adhered to supporting plate.
The method that a kind of crystalline silicon blocks is installed, wherein: described crystalline silicon blocks is made up of the short silico briquette more than two or two.
The method that a kind of crystalline silicon blocks is installed, wherein: described crystalline silicon blocks only is installed in the hydraulic pressure folder, places the upper end of gauze.
The method that a kind of crystalline silicon blocks is installed, wherein: described crystalline silicon blocks only is installed in down in the hydraulic pressure folder, places down the upper end of gauze.
The method that a kind of crystalline silicon blocks is installed, wherein: described crystalline silicon blocks is installed in hydraulic pressure folder and the following hydraulic pressure folder simultaneously, places the upper end of gauze and following gauze respectively.
The method that a kind of crystalline silicon blocks is installed, wherein: the described quantity that is installed in the crystalline silicon blocks of level tank is more than two or two.
The method that a kind of crystalline silicon blocks is installed, wherein: the described quantity that is installed in down the crystalline silicon blocks of level tank is more than two or two.
Operation principle of the present invention and advantage:
In the whole process of crystalline silicon blocks cutting, the gauze ratio is easier to vibrations, and especially more serious at the amplitude of incoming line and appearance mouthful gauze, the present invention mainly is by installation that silico briquette is staggered, and selects the part silico briquette that the one end is placed outside the gauze according to the position of staggering.Silico briquette is placed outside the gauze, is to play the effect of stablizing gauze on the one hand; Be that the head or the afterbody that place gauze not cut outward are equivalent to the thicker silicon chip of a slice in the process of crystalline silicon blocks cutting in addition on the one hand, thereby the thin silicon sheet after the cutting has been played a barrier effect, prevent sheet.
Crystalline silicon blocks mounting means provided by the invention mainly contains two advantages: one, can cut a plurality of crystalline silicon blocks simultaneously, improve the cutting production capacity of separate unit slicer; Two, be not the both sides that the two ends end to end of each crystalline silicon blocks all placed gauze, but select the part silico briquette that the one end is placed outside the gauze according to the position of staggering, can not only effectively reduce producing bad silicon chip in the silicon chip cutting process in this way, can not cause more waste simultaneously because each crystalline silicon blocks does not all cut end to end.
Description of drawings
Fig. 1 is the structural representation of embodiment 12;
Fig. 2 is the structural representation of embodiment 14;
Fig. 3 is the structural representation of embodiment 16 or embodiment 19;
Reference numeral: gauze 1, crystalline silicon blocks 2.
The specific embodiment
The method that embodiment 1, a kind of crystalline silicon blocks are installed is bonded in silico briquette on the supporting plate earlier, and the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and is fixed by the hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered.
The method that embodiment 2-1, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 1cm.
The method that embodiment 2-2, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 5cm.
The method that embodiment 2-3, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 10cm.
The method that embodiment 2-4, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 25cm.
The method that embodiment 2-5, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 40cm.
The method that embodiment 3, a kind of crystalline silicon blocks are installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze both sides have at least the end face of a silico briquette to go out gauze is 10mm.
The method that embodiment 4, a kind of crystalline silicon blocks are installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze both sides have at least the end face of a silico briquette to go out gauze is 30mm.
The method that embodiment 5, a kind of crystalline silicon blocks are installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze both sides have at least the end face of a silico briquette to go out gauze is 50mm.
The method that embodiment 6, a kind of crystalline silicon blocks are installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze both sides have at least the end face of a silico briquette to go out gauze is 80mm.
The method that embodiment 7, a kind of crystalline silicon blocks are installed, wherein: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze both sides have at least the end face of a silico briquette to go out gauze is 100mm.
The method that embodiment 8, a kind of crystalline silicon blocks are installed, wherein: described crystalline silicon blocks is a long silico briquette that is adhered to supporting plate, and all the other are with embodiment 1.
The method that embodiment 9, a kind of crystalline silicon blocks are installed, wherein: described crystalline silicon blocks is made up of two short silico briquettes, and all the other are with embodiment 1.
The method that embodiment 10, a kind of crystalline silicon blocks are installed, wherein: described crystalline silicon blocks is made up of three short silico briquettes, and all the other are with embodiment 1.
The method that embodiment 11, a kind of crystalline silicon blocks are installed, wherein: described crystalline silicon blocks is made up of four short silico briquettes, and all the other are with embodiment 1.
The method that embodiment 12, a kind of crystalline silicon blocks are installed, wherein: two crystalline silicon blocks are staggered to be installed in the hydraulic pressure folder, and the head of one of them silico briquette and the afterbody of another one silico briquette placed respectively outside the gauze of both sides, all the other are with any one embodiment among the embodiment 1-11.
The method that embodiment 13, a kind of crystalline silicon blocks are installed, wherein: two crystalline silicon blocks are staggered to be installed in down in the hydraulic pressure folder, and the head of one of them silico briquette and the afterbody of another one silico briquette placed respectively outside the gauze of both sides, all the other are with any one embodiment among the embodiment 1-11.
The method that embodiment 14, a kind of crystalline silicon blocks are installed, wherein: four crystalline silicon blocks are staggered to be installed in during hydraulic pressure folder and following hydraulic pressure presss from both sides, and the head of two crystalline silicon blocks of symmetry placed outside the end line net, the afterbody of two other assymetric crystal silico briquette places outside the other end gauze, and all the other are with any one embodiment among the embodiment 1-11.
The method that embodiment 15, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in the crystalline silicon blocks of level tank is two, all the other are with any one embodiment among the embodiment 1-14.
The method that embodiment 16, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in the crystalline silicon blocks of level tank is three, all the other are with any one embodiment among the embodiment 1-14.
The method that embodiment 17, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in the crystalline silicon blocks of level tank is four, all the other are with any one embodiment among the embodiment 1-14.
The method that embodiment 18, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in down the crystalline silicon blocks of level tank is two, all the other are with any one embodiment among the embodiment 1-17.
The method that embodiment 19, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in down the crystalline silicon blocks of level tank is three, all the other are with any one embodiment among the embodiment 1-17.
The method that embodiment 20, a kind of crystalline silicon blocks are installed, wherein: the described quantity that is installed in down the crystalline silicon blocks of level tank is four, all the other are with any one embodiment among the embodiment 1-17.
The method that embodiment 21, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks was installed, installations of respectively silico briquette being staggered, the installation of staggering made the vertical range LA between the end face of 2 adjacent silico briquettes equal 5cm at interval, do not line up between the silico briquette, the distance L B that the gauze two ends have at least the end face of a silico briquette to exceed gauze is 2mm.
The method that embodiment 22, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks was installed, installations of respectively silico briquette being staggered, the installation of staggering made the vertical range LA between the end face of 2 adjacent silico briquettes equal 5cm at interval, do not line up between the silico briquette, the distance L B that the gauze two ends have at least the end face of a silico briquette to exceed gauze is 5mm.
The method that embodiment 23, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks was installed, installations of respectively silico briquette being staggered, the installation of staggering made the vertical range LA between the end face of 2 adjacent silico briquettes equal 10cm at interval, do not line up between the silico briquette, the distance L B that the gauze two ends have at least the end face of a silico briquette to exceed gauze is 6mm.
The method that embodiment 24, a kind of crystalline silicon blocks are installed, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, wherein: when crystalline silicon blocks is installed, respectively the end alignment of silico briquette is installed, the distance L B that gauze two ends silico briquette exceeds gauze is 0mm.The length and width height of silico briquette is respectively: 180cm, 156mm, 156mm.
The method that embodiment 25, a kind of crystalline silicon blocks are installed, wherein: the length and width height of silico briquette is respectively: 180cm, 156mm, 156mm, all the other are with embodiment 21.
The method that embodiment 26, a kind of crystalline silicon blocks are installed, wherein: the length and width height of silico briquette is respectively: 180cm, 156mm, 156mm, all the other are with embodiment 22.
The method that embodiment 27, a kind of crystalline silicon blocks are installed, wherein: the length and width height of silico briquette is respectively: 180cm, 156mm, 156mm, all the other are with embodiment 23.
Table 1 different technologies scheme implementation of the present invention effect relatively
Do the sheet rate that cuts away, TTV, stria, collapse the contrast test of aspect, limit when the silico briquette that adopts other length and width high standards, the effect of similar table 1 is also arranged.
Claims (10)
1. the crystalline silicon blocks method of installing, earlier silico briquette is bonded on the supporting plate, the supporting plate that will be stained with silico briquette again is installed in the cutting chamber, and be fixed by hydraulic pressure folder, it is characterized in that: when crystalline silicon blocks is installed, the installation of respectively silico briquette being staggered is staggered and the vertical range LA that makes between the end face of 2 adjacent silico briquettes is installed at interval more than or equal to 1cm.
2. the method that a kind of crystalline silicon blocks as claimed in claim 1 is installed is characterized in that: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze two ends have at least the end face of a silico briquette to go out gauze is 1-100mm.
3. the method that a kind of crystalline silicon blocks as claimed in claim 1 is installed is characterized in that: the silico briquette of the described installation of staggering is vertical with gauze, does not line up between the silico briquette, and the distance L B that the gauze two ends have at least the end face of a silico briquette to go out gauze is 5-20mm.
4. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: described crystalline silicon blocks is a long silico briquette that is adhered to supporting plate.
5. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: described crystalline silicon blocks is made up of the short silico briquette more than two or two.
6. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: described crystalline silicon blocks only is installed in the hydraulic pressure folder, places the upper end of gauze.
7. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: described crystalline silicon blocks only is installed in down in the hydraulic pressure folder, places down the upper end of gauze.
8. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: described crystalline silicon blocks is installed in hydraulic pressure folder and the following hydraulic pressure folder simultaneously, places the upper end of gauze and following gauze respectively.
9. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: the described quantity that is installed in the crystalline silicon blocks of level tank is more than two or two.
10. as the method for claim 1 or 2 or 3 described a kind of crystalline silicon blocks installations, it is characterized in that: the described quantity that is installed in down the crystalline silicon blocks of level tank is more than two or two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100077052A CN102133775A (en) | 2011-01-14 | 2011-01-14 | Method for installing crystalline silicon briquettes |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100077052A CN102133775A (en) | 2011-01-14 | 2011-01-14 | Method for installing crystalline silicon briquettes |
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| CN102133775A true CN102133775A (en) | 2011-07-27 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1190923A (en) * | 1997-09-19 | 1999-04-06 | Hitachi Cable Ltd | Cutting method by multiple wire saw |
| JP2001001248A (en) * | 1999-06-18 | 2001-01-09 | Sumitomo Metal Ind Ltd | Wire saw cutting method and its apparatus |
| JP2004082282A (en) * | 2002-08-27 | 2004-03-18 | Kyocera Corp | Method for slicing semiconductor block |
| CN201235584Y (en) * | 2008-07-01 | 2009-05-13 | 内蒙古晟纳吉光伏材料有限公司 | Silicon slice wire cutting apparatus |
| CN101554757A (en) * | 2009-05-14 | 2009-10-14 | 浙江昱辉阳光能源有限公司 | Cutting method of crystalline silicon blocks |
| CN101879757A (en) * | 2010-04-01 | 2010-11-10 | 浙江硅宏电子科技有限公司 | Installation method of crystal bars in multi-wire cutting machine |
-
2011
- 2011-01-14 CN CN2011100077052A patent/CN102133775A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1190923A (en) * | 1997-09-19 | 1999-04-06 | Hitachi Cable Ltd | Cutting method by multiple wire saw |
| JP2001001248A (en) * | 1999-06-18 | 2001-01-09 | Sumitomo Metal Ind Ltd | Wire saw cutting method and its apparatus |
| JP2004082282A (en) * | 2002-08-27 | 2004-03-18 | Kyocera Corp | Method for slicing semiconductor block |
| CN201235584Y (en) * | 2008-07-01 | 2009-05-13 | 内蒙古晟纳吉光伏材料有限公司 | Silicon slice wire cutting apparatus |
| CN101554757A (en) * | 2009-05-14 | 2009-10-14 | 浙江昱辉阳光能源有限公司 | Cutting method of crystalline silicon blocks |
| CN101879757A (en) * | 2010-04-01 | 2010-11-10 | 浙江硅宏电子科技有限公司 | Installation method of crystal bars in multi-wire cutting machine |
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Application publication date: 20110727 |