CN102130123B - 功率mos晶体管的终端结构及其制造方法 - Google Patents
功率mos晶体管的终端结构及其制造方法 Download PDFInfo
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- CN102130123B CN102130123B CN 201010027325 CN201010027325A CN102130123B CN 102130123 B CN102130123 B CN 102130123B CN 201010027325 CN201010027325 CN 201010027325 CN 201010027325 A CN201010027325 A CN 201010027325A CN 102130123 B CN102130123 B CN 102130123B
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CN102130123A CN102130123A (zh) | 2011-07-20 |
CN102130123B true CN102130123B (zh) | 2013-07-24 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1527394A (zh) * | 2003-03-03 | 2004-09-08 | 松下电器产业株式会社 | 固体摄像器件、制造方法及行间传递型ccd图像传感器 |
CN1790747A (zh) * | 2004-12-17 | 2006-06-21 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN101510551A (zh) * | 2009-03-30 | 2009-08-19 | 电子科技大学 | 等离子平板显示器驱动芯片用高压器件 |
CN101567320A (zh) * | 2009-06-04 | 2009-10-28 | 上海宏力半导体制造有限公司 | 功率mos晶体管的制造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1527394A (zh) * | 2003-03-03 | 2004-09-08 | 松下电器产业株式会社 | 固体摄像器件、制造方法及行间传递型ccd图像传感器 |
CN1790747A (zh) * | 2004-12-17 | 2006-06-21 | 三洋电机株式会社 | 半导体装置及其制造方法 |
CN101510551A (zh) * | 2009-03-30 | 2009-08-19 | 电子科技大学 | 等离子平板显示器驱动芯片用高压器件 |
CN101567320A (zh) * | 2009-06-04 | 2009-10-28 | 上海宏力半导体制造有限公司 | 功率mos晶体管的制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131217 |
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Effective date of registration: 20131217 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |