CN102117782B - Composite buried element structure and manufacturing method thereof - Google Patents
Composite buried element structure and manufacturing method thereof Download PDFInfo
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- CN102117782B CN102117782B CN2010100014260A CN201010001426A CN102117782B CN 102117782 B CN102117782 B CN 102117782B CN 2010100014260 A CN2010100014260 A CN 2010100014260A CN 201010001426 A CN201010001426 A CN 201010001426A CN 102117782 B CN102117782 B CN 102117782B
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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Abstract
The invention provides a composite buried element structure and a manufacturing method thereof. The composite buried element structure comprises a composite substrate structure which comprises at least two core substrates, wherein the at least two core substrates are combined with each other through an adhesive layer; a first opening is formed in the upper core substrate; a second opening is formed in the lower core substrate; the first opening is larger than the second opening to form an inverted convex space; a chip is provided with a first group of electrical contact pads which are fixed on at least two insulating material laminated layers and are embedded into the inverted convex space; the chip is buried in the second opening; a gap is formed between the chip and the lower core substrate; a plurality of blind via holes penetrate through the at least two material laminated layers and are correspondingly and electrically connected with the plurality of electrical contact pads; and an insulating layer is arranged on the composite substrate structure and covers the plurality of blind via holes and the at least two insulating material laminated layers. Through the structure, stress increasing and decreasing can be borne, and deformation of the substrate due to stress variation is reduced.
Description
Technical field
The present invention relates to a kind of embedded electronic components structure, particularly a kind of compound flush type component structure and manufacturing approach thereof with the changing capability that meets with stresses.
Background technology
The development trend of electronic product little by little evolve for light, thin, short, little, at a high speed, high frequency and multi-functional field.In order to satisfy practical application request, semiconductor packaging has been the stacked structure of three-dimensional (3D) from BGA (ball grid array is called for short BGA) encapsulation and crystal covered carrier-board (flip chip is called for short FC) evolution gradually.Perhaps, in the encapsulation of support plate face, with FC technology or bonding wire (wire bond is called for short WB) technology various packaging body assemblings are engaged, to form a multi-functional structure.
In prior art, utilize FC technology or WB technology that active element chip and support plate are assembled into a packaging body, and more than one packaging body is piled up or is installed on the same support plate.Consider between each element, see through circuit each other and connect, and increase the support plate surface receive the area/volume ratio value, make that the wiring difficulty is more and more high, thereby industry begins to research and develop active or passive component is imbedded the technology in the support plate.
In traditional flush type support plate; Because the board structure that constitutes is made up of material different; Under different environment and variations in temperature; Cause different STRESS VARIATION, and then make base plate deformation and flexible wait variation, influence such as cause producing that difficulty, contraposition are difficult for, yield reduction and reliability are performed poor.
Summary of the invention
Embodiments of the invention provide a kind of compound flush type component structure, comprising: the compound substrate structure that at least two core substrates constitute is to combine through a tack coat between the said at least two core substrates; First is opened in the upper strata core substrate, reaches one second and is opened in lower floor's core substrate, and wherein this first opening constitutes a space of falling the convex greater than this second opening; One chip has first group of electric contact mat, be fixed at least two insulating material laminations, and be bumped into this space of falling the convex, wherein in this chip buried this second opening, and and this lower floor's core substrate between have a space; A plurality of guides hole penetrates said at least two material laminates, and correspondence also electrically connects said a plurality of electric contact mat; And one insulating barrier be arranged on this compound substrate structure, and cover on said a plurality of guides hole and the said at least two insulating material laminations.
Embodiments of the invention provide a kind of compound flush type component structure in addition; Comprise: one first flush type packing component comprises: one first compound substrate structure that one first and one second core substrate constitutes; This first and second core substrate is to combine through one first tack coat, and wherein a space of falling the convex is formed in this first and second core substrate; One first chip has first group of electric contact mat, is fixed at least two insulating material laminations, and is bumped into this space of falling the convex, wherein has a space between this first chip and this second core substrate; A plurality of guides hole penetrates said at least two insulating material laminations, and to should first group of electric contact mat; One first insulating barrier is arranged at this first compound substrate structure, and covers on said a plurality of guides hole and said at least two material laminates; And one first layer reinforced structure be arranged on this first insulating barrier; One second flush type packing component comprises: one second compound substrate structure that one the 3rd and one the 4th core substrate constitutes; This third and fourth core substrate is to combine through one second tack coat, and wherein a convex space is formed in this third and fourth core substrate; One second chip has second group of electric contact mat, is fixed at least two insulating material laminations, and is bumped into this convex space, wherein has a space between this second chip and the 4th core substrate; A plurality of guides hole penetrates said at least two insulating material laminations, and to should second group of electric contact mat; One second insulating barrier is arranged at this second compound substrate structure, and covers on said a plurality of guides hole and said at least two material laminates; And one second layer reinforced structure be arranged on this second insulating barrier; Wherein this first and second flush types packing component is back-to-back setting, combines through one the 3rd tack coat therebetween.
Embodiments of the invention provide a kind of manufacturing approach of compound flush type component structure again, comprising: provide a chip to have first group of electric contact mat, be fixed at least two insulating material laminations, constitute a pre-packaged body; The composite construction that this pre-packaged body of pressing, one first core board and one second core board constitute; This first and second core board is to combine through one first tack coat; Wherein this composite construction has a space of falling the convex; And this pre-packaged body is imbedded in this space of falling the convex, and wherein has a space between this chip and this second core substrate; Form a plurality of guides hole and penetrate said at least two insulating material laminations, and corresponding said a plurality of electric contact mats; Form an insulating barrier and be arranged on this composite construction, and cover on said a plurality of guides hole and the said at least two insulating material laminations; And form a layer reinforced structure and be arranged on this insulating barrier.
Embodiments of the invention provide a kind of manufacturing approach of compound flush type component structure again; Comprise: provide one first chip to have first group of electric contact mat and one second chip has second group of electric contact mat; Be fixed at least two insulating material laminations, cutting and separating becomes one first and one second pre-packaged body; The one second flush type packing component that the one first flush type packing component that this first pre-packaged body of pressing, one first core board and one second core board constitute and this second pre-packaged body, one the 3rd core board and one the 4th core board constitute; Wherein this first and second core board is to combine through one first tack coat; Wherein this composite construction has a space of falling the convex; And this first pre-packaged body is imbedded in this space of falling the convex, and wherein has a space between this first chip and this second core substrate; Wherein this third and fourth core board is to combine through one second tack coat, and wherein this composite construction has a convex space, and this second pre-packaged body imbeds in this convex space, and wherein has a space between this second chip and the 4th core substrate; And wherein this first and second flush types packing component is back-to-back setting, combines through one the 3rd tack coat therebetween; Form a plurality of guides hole and penetrate said at least two insulating material laminations respectively, and to should first group and second group of electric contact mat; Forming one first insulating barrier is arranged on this first flush type packing component; And cover on said a plurality of guides hole and the said at least two insulating material laminations; Reach formation one second insulating barrier and be arranged on this second flush type packing component, and cover on said a plurality of guides hole and the said at least two insulating material laminations; And form one first layer reinforced structure and be arranged on this first insulating barrier, and form one second layer reinforced structure and be arranged on this second insulating barrier.
The present invention provides a kind of compound embedded electronic components encapsulating structure that meets with stresses and change, with one have composite construction chipset be embedded into to substrate, the increase and decrease that can meet with stresses of this structure reduces the deformation that the variation of substrate stress is produced.
For making the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended accompanying drawing, elaborates as follows.
Description of drawings
Fig. 1～Figure 11 is the manufacturing approach that shows according to the compound flush type component structure of one embodiment of the invention, in the generalized section of each processing step.
Figure 12～Figure 19 is the manufacturing approach that shows compound according to another embodiment of the present invention flush type component structure, in the generalized section of each processing step.
Figure 20 shows to remove the tack coat step according to an embodiment of the invention, makes the double-faced packaging body separately become two independently generalized sections of flush type component structure packaging body 200a and 200b.
Figure 21 shows according to embodiments of the invention to adopt three-dimensional stacked chip to have the generalized section of the flush type component structure packaging body 600 of dual side build-up layers structure.
And the description of reference numerals in the above-mentioned accompanying drawing is following:
100,100a, 100b～pre-packaged body;
110～loading plate;
122,122a, 122b～first dielectric film;
124,124a, 124b～second dielectric film;
130,130a, 130b～chip;
132,132a, 132b～contact mat;
135～cutting step;
150,150a, 150b～opening;
200,200a, 200b～flush type component structure packaging body;
210,210a～first core board;
210b～the 3rd core board;
215～the first windows;
220,220a～second core board;
220b～the 4th core board;
225～the second windows;
The width of L～composite bearing plate portion;
The width of l～chip part;
230,230a, 230b～tack coat;
228,228a, 228b～space;
229,229a, 229b～slit;
250,250a, 250b～photoresist layer;
260,260a, 260b～plated metal;
270,270a, 270b～dielectric film;
310,310a, 310b～interlayer dielectric layer;
320,320a, 320b～intraconnections;
330,330a, 330b, 360,360a, 360b～conducting metal blind hole;
400～flush type component structure packaging body;
410～tack coat;
500～through-hole structure;
510～conductive layer;
520～grout material;
600～flush type component structure packaging body;
650～run through the via of chip;
710～interlayer dielectric layer;
720～intraconnections;
730,760～conducting metal blind hole.
Embodiment
Below specify and be accompanied by the example of description of drawings with each embodiment, as reference frame of the present invention.In accompanying drawing or specification description, similar or identical part is all used identical figure number.And in the accompanying drawings, the shape of embodiment or thickness can enlarge, and to simplify or convenient the sign.Moreover the part of each element will be it should be noted that to describe explanation respectively in the accompanying drawing; Not shown or the element described is the form that those of ordinary skills knew, in addition among the figure; Certain embodiments is merely the ad hoc fashion that open the present invention uses, and it is not in order to limit the present invention.
In view of this; Embodiments of the invention provide a kind of compound embedded electronic components encapsulating structure that meets with stresses and change; With one have composite construction chipset be embedded into to substrate, the increase and decrease that can meet with stresses of this structure reduces the substrate stress and changes the deformation that is produced.
Fig. 1～Figure 11 is the manufacturing approach that shows according to the compound flush type component structure of one embodiment of the invention, in the generalized section of each processing step.See also Fig. 1, a loading plate 110, first dielectric film 122 and second dielectric film 124 at first are provided, and are pressed into a compound carrying board structure.The purposes of loading plate 110 is to be carried as the master, in follow-up technology, can be removed, therefore not limit its material.First dielectric film 122 is different materials with second dielectric film 124, and first dielectric film 122 has good stress resistivity (for example pi (PI)), and second dielectric film 124 is main (for example ABF resin) with the resin material.
See also Fig. 2, a plurality of chips 130 inversions are attached on second dielectric film 124, then impose baking procedure second dielectric film 124 is solidified.Chip 130 is the electronic installations by the semiconductor technology made, and its main element is provided with on the signal joint face and by the metallization line and is connected to surperficial contact mat 132.The signal joint face of chip 130 makes contact mat 132 imbed in second dielectric film 124 towards second dielectric film 124 of compound carrying board structure.
See also Fig. 3, remove loading plate 110, loading plate 110 is separated with first dielectric film 122, in this first dielectric film 122 as a mould release membrance.In an embodiment, in the process that removes loading plate, can select to remove or etching mould release membrance partly.Then, carry out cutting step 135 to separate into independently pre-packaged body 100.Pre-packaged body 100 comprises that the width of chip part 130 is l, and the width of composite bearing plate portion is L.
See also Fig. 4, respectively hole milling on first core board 210 is formed first window 215, and hole milling on second core board 220 is formed second window 225 with make-up machine.The size of first window 215 is L more than or equal to the width of composite bearing plate portion approximately, and the size of second window 225 is l more than or equal to the width of chip part 130 approximately.
Then, see also Fig. 5, pre-packaged body 100, first core board 210 and second core board 220 are assembled.Insert and put a tack coat (for example polypropylene (PP)) 230 between first core board 210 and second core board 220; The composite bearing plate portion of pre-packaged body 100 is imbedded in first window 215 of first core board 210; Carry out hot pressing, make pre-packaged body 100 imbed in first core board 210 and second core board 220.Because only there are micro gap in pre-packaged body 100 and 215 of first windows, in the process of hot pressing, the material of tack coat can be complied with this micro-pore and flow.According to one embodiment of the invention, the thickness of first core board 210 approximates the thickness of the first and second dielectric film composite beds.In another embodiment, the thickness that stays slit 229, the second core boards 220 between the pre-packaged body 100 and second window 225 stays a space 228 more than or equal to the thickness of chip 130, and is as shown in Figure 6.
It should be noted,, yet be not limited thereto, also can select the core board of multiple-level stack for use though embodiment according to the invention is the composite construction with the first and second core board pressings.In an embodiment, the thermal stress of packaging body 100 can be eliminated in slit 229 and space 228, perhaps can a heat-conducting glue (not shown) be inserted slit 229 and space 228, to derive the thermal stress that packaging body 100 is produced.
See also Fig. 7, implement a laser drilling process and form a plurality of openings 150, corresponding each contact mat 132 penetrates first and second dielectric films 122,124, the surface of exposing contact mat 132.The pattern of opening 150 is a blind hole, also can use other technologies, and for example photoresist photoetching and etch process form the position of opening 150 corresponding each contact mats 132.
Then, see also Fig. 8, form a conductive layer 240 on first core board 210 and first dielectric film 122, insert to compliance the surface of opening 150.The method that forms conductive layer 240 comprises sputtering method, rubbing method, physical vaporous deposition (PVD) or chemical vapour deposition technique (CVD).Then, attach a photoresist layer 250 on conductive layer 240, and carry out image transfer, form open loop, expose opening 150 zones.
See also Fig. 9, electroplate, form plated metal 260 (for example copper/tin/SAC/nickel/aluminium/tungsten/above-mentioned or other alloys) and in open loop, fill up this opening 150 and electrically contact with contact mat 132.Then, see also Figure 10, remove photoresist layer 250, and etching removes unnecessary conductive layer 240, expose first core board 210.Then, pressing one dielectric film 270 is accomplished the making that meets flush type component structure packaging body 200 on first core board 210 and plated metal 260.
Will be appreciated that, in another embodiment, can form layer reinforced structure, comprise interlayer dielectric layer 310, intraconnections 320 and conducting metal blind hole 330,360 through forming multilayer dielectric layer and metallized technology, shown in figure 11.Then, follow-up SR and the B/E technology of carrying out is to accomplish the making of circuit board.
Embodiment disclosed according to the present invention through inserting and putting tack coat between the multilayer core board, and constitutes compound substrate structure, can absorb STRESS VARIATION, slows down the base plate deformation situation.Moreover, adopt dielectric film (for example ABF resin) and the composite construction that mould release membrance (for example PI) combines at the electricity connection end of chip, can absorb STRESS VARIATION, slow down chip and receive STRESS VARIATION to produce deformation.What is more, and the electric connection structure stress of chip changes and the breakage fracture situation that causes, also therefore structural design and alleviating.Because the flush type chipset is adopted composite structure, itself had the effect that meets with stresses and change, in the design of collocation complex nucleus core, can further strengthen the tolerances of STRESS VARIATION.In addition, chipset is that the mode that adopts edge to bury is pressure bonded in the core board, so the stationarity of chip is good, does not come off because of external force.Moreover, below chip, adopt hollow design, promptly form the space structure.When substrate expands with heat and contract with cold distortion, do not influence agent structure.In addition, also can select to insert heat-conducting glue,, derive through conduction with the heat energy that chip produced.
Figure 12～Figure 19 is the manufacturing approach that shows compound according to another embodiment of the present invention flush type component structure, in the generalized section of each processing step.See also Figure 12, with the in addition pressing assembling of two groups of members, comprise first group of pre-packaged body 100a, the first core board 210a and the second core board 220a, and first group of pre-packaged body 100b, the 3rd core board 210b and the 4th core board 220b, in addition pressing is assembled.Insert and put a tack coat (for example polypropylene (PP)) 230a between the first core board 210a and the second core board 220a; The composite bearing plate portion of the first pre-packaged body 100a is imbedded in first window of the first core board 210a; Carry out hot pressing, the pre-packaged body 100a that wins is imbedded among the first core board 210a and the second core board 220a.Simultaneously; Insert and put a tack coat (for example polypropylene (PP)) 230b between the 3rd core board 210b and the 4th core board 220b; The composite bearing plate portion of the second pre-packaged body 100b is imbedded in first window of the 3rd core board 210b; Carry out hot pressing, make the second pre-packaged body 100b imbed among the 3rd core board 210b and the 4th core board 220b.Owing to only have micro gap between the window of the first and second pre-packaged body 100a and 100b and the second and the 4th core board, in the process of hot pressing, the material of tack coat can be complied with this micro-pore and flow, and between the gap, stays slit 229a and 229b.The thickness of the second core board 220a is more than or equal to the thickness of chip 130a, and stays a space 228a.Identical ground, the thickness of the 4th core board 220b is more than or equal to the thickness of chip 130b, and stays a space 228b, and is shown in figure 13.
See also Figure 14, implement a laser drilling process and form a plurality of opening 150a, corresponding each contact mat 132a penetrates the first and second dielectric film 122a, 124a, the surface of exposing contact mat 132a.Relatively, can implement a laser drilling process in addition and form a plurality of opening 150b, corresponding each contact mat 132b penetrates the third and fourth dielectric film 122b, 124b, the surface of exposing contact mat 132b.The pattern of opening 150a, 150b is a blind hole, also can use other technologies, and for example photoresist photoetching and etch process form the position of opening 150a, corresponding each contact mat 132a of 150b, 132b.
Then, see also Figure 15, form one first conductive layer 240a on the first core board 210a and the first dielectric film 122a, insert to compliance the surface of opening 150a.Relatively, form one second conductive layer 240b on the 3rd core board 210b and the 3rd dielectric film 122b, insert to compliance the surface of opening 150b.
The method that forms the first and second conductive layer 240a, 240b comprises sputtering method, rubbing method, physical vaporous deposition (PVD) or chemical vapour deposition technique (CVD).Then, attach a photoresist layer 250a on the first conductive layer 240a, and carry out image transfer; Form open loop, expose opening 150a zone, and attach another photoresist layer 250b on the second conductive layer 240b; And carry out image transfer, and form open loop, expose opening 150b zone.
See also Figure 16; Electroplate; Form plated metal 260a (for example copper/tin/SAC/nickel/aluminium/tungsten/above-mentioned or other alloys) in open loop; Fill up this opening 150a and electrically contact, and plated metal 260b (for example copper/tin/SAC/nickel/aluminium/tungsten/above-mentioned or other alloys) in open loop, fills up this opening 150b and electrically contacts with contact mat 132b with contact mat 132a.
Then, see also Figure 17, remove photoresist layer 250a, 250b, and etching removes the unnecessary first and second conductive layer 240a, 240b, expose the first core board 210a and the 3rd core board 210b.Then, pressing one first dielectric film 270a is on the first core board 210a and plated metal 260a, and pressing one second dielectric film 270b is on the 3rd core board 210b and plated metal 260b.
See also Figure 18, can be through forming multilayer dielectric layer and metallized technology, it is last in the first and second dielectric film 270a, 270b to form layer reinforced structure respectively.Layer reinforced structure on the said first dielectric film 270a comprises interlayer dielectric layer 310a, intraconnections 320a and conducting metal blind hole 330a, 360a, and the layer reinforced structure on the second dielectric film 270b comprises interlayer dielectric layer 310b, intraconnections 320b and conducting metal blind hole 330b, 360b.
Then, can be chosen in the technology that forms layer reinforced structure, form through-hole structure simultaneously.See also Figure 19, form through-hole structure 500, have conductive layer 510 on the madial wall of through-hole structure 500, make the chip-stacked 100a of levels and 100b to electrically connect through conductive layer 510 in the neighboring area of chip packing-body.Inner fill insulant of via or grout material 520.Then, follow-up SR and the B/E technology of carrying out is to accomplish the making of bilayer or multilayer flush type component structure packaging body 400.
The neighboring area that on the other hand, yet can be chosen in chip packing-body does not form through-hole structure.Also promptly, after accomplishing layer reinforced structure, divest or method for chemially etching removal tack coat 410, make packaging body separately become two independently flush type component structure packaging body 200a and 200b with physics, shown in figure 20.Then, follow-up SR and the B/E technology of carrying out respectively is to accomplish the making of circuit board.
It should be noted that the chip that disclosed each embodiment of the present invention is adopted is not limited to the single face chip, also is that active element is not only to be made on the one side of wafer, also can adopt two-sided chip or three-dimensional stacked chip.See also Figure 21; Utilize the processing step of Fig. 1～Figure 11 the disclosed embodiments; Adopt three-dimensional stacked chip 100c; Two-sided contact mat 132a and the 132b of all being provided with, and the via through running through chip (is claimed through silicon via again, TSV) 650 is electrically connected contact mat 132a and 132b and each active element.After the layer reinforced structure of first of completion; Comprise and form interlayer dielectric layer 310, intraconnections 320 and conducting metal blind hole 330,360; To electrically connect positive contact mat 132a, then, carry out second layer reinforced structure again; Comprise forming interlayer dielectric layer 710, intraconnections 720 and conducting metal blind hole 730,760, to electrically connect the contact mat 132b at the back side.Then, follow-up SR and the B/E technology of carrying out is to accomplish the making of bilayer or multilayer flush type component structure packaging body 600.
Embodiment disclosed according to the present invention, the two-layer composite of chip top, main is main with two or more dielectric film classes.The design of said two-layer composite mainly is the stress that causes base plate deformation in order to offset.If the baseplate material downwarping then can be used harder material under the composite wood, to resist reclinate stress.For example, through using ABF and PI material, because PI is more hard than ABF after toasting, so can place the ABF below, opposing is the stress of distortion downwards.Moreover, but the situation of two kinds of material optic placodes that lamination layer structure adopted and determining.For example, substrate is crooked up or down, can determine the relative position of two insulating material.The thickness of insulating material and kind all need be looked the actual product demand and determined, and carry out with optimized implementation method.In addition, the kind of insulating material can be like the employed insulating material of general circuit plate circle, and for example ABF, PP or PI etc. press down or are material such as high molecular polymer, like PMMA, PVC etc.
Though the present invention with preferred embodiment openly as above; So it is not in order to limit scope of the present invention; Any those of ordinary skills; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claim defined of enclosing.
Claims (24)
1. compound flush type component structure comprises:
The compound substrate structure that at least two core substrates constitute is to combine through a tack coat between the said at least two core substrates;
One first is opened in the upper strata core substrate, reaches one second and is opened in lower floor's core substrate, and wherein this first opening constitutes a space of falling the convex greater than this second opening;
One chip has first group of electric contact mat, be fixed at least two insulating material laminations, and be bumped into this space of falling the convex, wherein in this chip buried this second opening, and and this lower floor's core substrate between have a space;
A plurality of guides hole penetrates said at least two insulating material laminations, and correspondence also electrically connects said a plurality of electric contact mat; And
One insulating barrier is arranged on this compound substrate structure, and covers on said a plurality of guides hole and the said at least two insulating material laminations.
2. compound flush type component structure as claimed in claim 1 comprises that also a layer reinforced structure is arranged on this insulating barrier, and wherein this layer reinforced structure comprises an interlayer dielectric layer, an intraconnections and a conducting metal blind hole, to electrically connect the electric contact mat of this chip.
3. compound flush type component structure as claimed in claim 1, wherein said at least two insulating material laminations comprise the composite construction that one first insulating barrier and one second insulating barrier are constituted.
4. compound flush type component structure as claimed in claim 3, wherein this first insulating barrier has good stress resistivity, comprises pi.
5. compound flush type component structure as claimed in claim 3, wherein this second insulating barrier comprises the resin material of ABF series.
6. compound flush type component structure as claimed in claim 1 comprises that also a heat-conducting glue inserts this space, to derive the thermal stress that chip was produced.
7. compound flush type component structure as claimed in claim 1, wherein the material of this tack coat comprises polypropylene.
8. compound flush type component structure as claimed in claim 1; Wherein this chip is a two-sided chip; Have second group of electric contact mat on the back side of this chip, and electrically connect first group and second group of electric contact mat through the via of consistent at least punching sheet.
9. compound flush type component structure as claimed in claim 8; Comprise that also an extra layer reinforced structure is arranged on the back side of this chip; Wherein this extra layer reinforced structure comprises an interlayer dielectric layer, an intraconnections and a conducting metal blind hole, to electrically connect second group of electric contact mat of this chip.
10. compound flush type component structure comprises:
One first flush type packing component comprises:
One first compound substrate structure that one first and one second core substrate constitutes, this first and second core substrate are to combine through one first tack coat, and wherein a space of falling the convex is formed in this first and second core substrate;
One first chip has first group of electric contact mat, is fixed at least two insulating material laminations, and is bumped into this space of falling the convex, wherein has a space between this first chip and this second core substrate;
A plurality of guides hole penetrates said at least two insulating material laminations, and to should first group of electric contact mat;
One first insulating barrier is arranged at this first compound substrate structure, and covers on said a plurality of guides hole and the said at least two insulating material laminations; And
One first layer reinforced structure is arranged on this first insulating barrier;
One second flush type packing component comprises:
One second compound substrate structure that one the 3rd and one the 4th core substrate constitutes, this third and fourth core substrate are to combine through one second tack coat, and wherein a convex space is formed in this third and fourth core substrate;
One second chip has second group of electric contact mat, is fixed at least two insulating material laminations, and is bumped into this convex space, wherein has a space between this second chip and the 4th core substrate;
A plurality of guides hole penetrates said at least two insulating material laminations, and to should second group of electric contact mat;
One second insulating barrier is arranged at this second compound substrate structure, and covers on said a plurality of guides hole and the said at least two insulating material laminations; And
One second layer reinforced structure is arranged on this second insulating barrier;
Wherein this first and second flush types packing component is back-to-back setting, combines through one the 3rd tack coat therebetween.
11. compound flush type component structure as claimed in claim 10 also comprises on the madial wall of a through-hole structure having a conductive layer, makes this first and second flush types packing component electrically connect through conductive layer.
12. compound flush type component structure as claimed in claim 10, wherein the material of the 3rd tack coat comprises polypropylene.
13. the manufacturing approach of a compound flush type component structure comprises:
Provide a chip to have first group of electric contact mat, be fixed at least two insulating material laminations, constitute a pre-packaged body;
The composite construction that this pre-packaged body of pressing, one first core board and one second core board constitute; This first and second core board is to combine through one first tack coat; Wherein this composite construction has a space of falling the convex; And this pre-packaged body is bumped in this space of falling the convex, and wherein has a space between this chip and this second core substrate;
Form a plurality of guides hole and penetrate said at least two insulating material laminations, and corresponding said a plurality of electric contact mats;
Form an insulating barrier and be arranged on this composite construction, and cover on said a plurality of guides hole and the said at least two insulating material laminations; And
Forming a layer reinforced structure is arranged on this insulating barrier.
14. the manufacturing approach of compound flush type component structure as claimed in claim 13, wherein this layer reinforced structure comprises an interlayer dielectric layer, an intraconnections and a conducting metal blind hole, to electrically connect the electric contact mat of this chip.
15. the manufacturing approach of compound flush type component structure as claimed in claim 13, wherein said at least two insulating material laminations comprise the composite construction that one first insulating barrier and one second insulating barrier are constituted.
16. the manufacturing approach of compound flush type component structure as claimed in claim 15, wherein this first insulating barrier has good stress resistivity, comprises pi.
17. the manufacturing approach of compound flush type component structure as claimed in claim 15, wherein this second insulating barrier comprises the resin material of ABF series.
18. the manufacturing approach of compound flush type component structure as claimed in claim 13 also comprises and inserting in this space of a heat-conducting glue, to derive the thermal stress that chip was produced.
19. the manufacturing approach of compound flush type component structure as claimed in claim 13, wherein the material of this tack coat comprises polypropylene.
20. the manufacturing approach of compound flush type component structure as claimed in claim 13; Wherein this chip is that a two-sided chip has second group of electric contact mat on the back side of this chip, and electrically connects first group and second group of electric contact mat through the via of consistent at least punching sheet.
21. the manufacturing approach of compound flush type component structure as claimed in claim 20; Also comprise and form an extra layer reinforced structure on the back side of this chip; Wherein this extra layer reinforced structure comprises an interlayer dielectric layer, an intraconnections and a conducting metal blind hole, to electrically connect second group of electric contact mat of this chip.
22. the manufacturing approach of a compound flush type component structure comprises:
Provide one first chip to have first group of electric contact mat and one second chip has second group of electric contact mat, be fixed at least two insulating material laminations, cutting and separating becomes one first and one second pre-packaged body;
The one second flush type packing component that the one first flush type packing component that this first pre-packaged body of pressing, one first core board and one second core board constitute and this second pre-packaged body, one the 3rd core board and one the 4th core board constitute; Wherein this first and second core board is to combine through one first tack coat; Wherein this composite construction has a space of falling the convex; And this first pre-packaged body is bumped in this space of falling the convex, and wherein has a space between this first chip and this second core substrate; Wherein this third and fourth core board is to combine through one second tack coat, and wherein this composite construction has a convex space, and this second pre-packaged body is bumped in this convex space, and wherein has a space between this second chip and the 4th core substrate; And wherein this first and second flush types packing component is back-to-back setting, combines through one the 3rd tack coat therebetween;
Form a plurality of guides hole and penetrate said at least two insulating material laminations respectively, and to should first group and second group of electric contact mat;
Forming one first insulating barrier is arranged on this first flush type packing component; And cover on said a plurality of guides hole and the said at least two insulating material laminations; Reach formation one second insulating barrier and be arranged on this second flush type packing component, and cover on said a plurality of guides hole and the said at least two insulating material laminations; And
Form one first layer reinforced structure and be arranged on this first insulating barrier, and formation one second layer reinforced structure is arranged on this second insulating barrier.
23. the manufacturing approach of compound flush type component structure as claimed in claim 22; Comprise that also forming a through-hole structure penetrates this first and second flush types packing component; Wherein have a conductive layer on the madial wall of this through-hole structure, make this first and second flush types packing component electrically connect through conductive layer.
24. the manufacturing approach of compound flush type component structure as claimed in claim 22 also comprises removing the 3rd tack coat, to separate into the two first and second flush type packing components independently.
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| CN108447857A (en) * | 2013-12-20 | 2018-08-24 | 乾坤科技股份有限公司 | Three dimensions encapsulating structure and its manufacturing method |
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| CN103646880A (en) * | 2013-09-29 | 2014-03-19 | 华进半导体封装先导技术研发中心有限公司 | Packaging technology based on board-level functional substrate and packaging structure |
| CN105987484B (en) * | 2015-02-28 | 2019-01-11 | 青岛海尔空调器有限总公司 | Defrosting control method and system when the frequent high temperature-proof of air-conditioning heating is protected |
| CN108573877B (en) * | 2017-03-14 | 2021-08-27 | 兴讯科技股份有限公司 | Method for forming attached electronic chip module with double-sided carrying parts |
| CN111463178B (en) * | 2020-06-22 | 2020-10-09 | 珠海越亚半导体股份有限公司 | Heat dissipation embedding packaging method |
| CN111712062B (en) * | 2020-06-30 | 2021-09-28 | 生益电子股份有限公司 | Chip and PCB welding method |
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