CN102117738A - 使用含碳氟化合物的聚合物使硅片顶角圆化的方法 - Google Patents
使用含碳氟化合物的聚合物使硅片顶角圆化的方法 Download PDFInfo
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- CN102117738A CN102117738A CN201010616194XA CN201010616194A CN102117738A CN 102117738 A CN102117738 A CN 102117738A CN 201010616194X A CN201010616194X A CN 201010616194XA CN 201010616194 A CN201010616194 A CN 201010616194A CN 102117738 A CN102117738 A CN 102117738A
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103700622A (zh) * | 2013-12-27 | 2014-04-02 | 中微半导体设备(上海)有限公司 | 硅通孔的形成方法 |
CN104299924A (zh) * | 2013-07-19 | 2015-01-21 | 无锡华润上华半导体有限公司 | 一种基于终点检测的soi衬底刻蚀方法 |
CN104370268A (zh) * | 2013-08-16 | 2015-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
CN104576392A (zh) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种鳍式场效应管的制备方法 |
CN112738704A (zh) * | 2021-04-01 | 2021-04-30 | 中芯集成电路制造(绍兴)有限公司 | Mems麦克风的制造方法 |
CN115148433A (zh) * | 2022-06-15 | 2022-10-04 | 无锡尚积半导体科技有限公司 | 一种提升f基氧化钒刻蚀形貌的方法 |
CN117877975A (zh) * | 2024-03-11 | 2024-04-12 | 之江实验室 | 利用icp刻蚀二氧化硅的方法 |
Citations (4)
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US6838355B1 (en) * | 2003-08-04 | 2005-01-04 | International Business Machines Corporation | Damascene interconnect structures including etchback for low-k dielectric materials |
CN1825189A (zh) * | 2005-02-23 | 2006-08-30 | 中华映管股份有限公司 | 平面显示器的阶梯式接触窗的制作方法 |
CN1941326A (zh) * | 2005-09-29 | 2007-04-04 | 海力士半导体有限公司 | 具有锥型沟道的半导体器件的制造方法 |
US20080014631A1 (en) * | 2003-09-25 | 2008-01-17 | Sachiko Kondo | Microwell Array Chip and Its Manufacturing Method |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6838355B1 (en) * | 2003-08-04 | 2005-01-04 | International Business Machines Corporation | Damascene interconnect structures including etchback for low-k dielectric materials |
US20080014631A1 (en) * | 2003-09-25 | 2008-01-17 | Sachiko Kondo | Microwell Array Chip and Its Manufacturing Method |
CN1825189A (zh) * | 2005-02-23 | 2006-08-30 | 中华映管股份有限公司 | 平面显示器的阶梯式接触窗的制作方法 |
CN1941326A (zh) * | 2005-09-29 | 2007-04-04 | 海力士半导体有限公司 | 具有锥型沟道的半导体器件的制造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104299924A (zh) * | 2013-07-19 | 2015-01-21 | 无锡华润上华半导体有限公司 | 一种基于终点检测的soi衬底刻蚀方法 |
CN104370268A (zh) * | 2013-08-16 | 2015-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
CN104370268B (zh) * | 2013-08-16 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
CN104576392A (zh) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种鳍式场效应管的制备方法 |
CN103700622A (zh) * | 2013-12-27 | 2014-04-02 | 中微半导体设备(上海)有限公司 | 硅通孔的形成方法 |
CN112738704A (zh) * | 2021-04-01 | 2021-04-30 | 中芯集成电路制造(绍兴)有限公司 | Mems麦克风的制造方法 |
CN115148433A (zh) * | 2022-06-15 | 2022-10-04 | 无锡尚积半导体科技有限公司 | 一种提升f基氧化钒刻蚀形貌的方法 |
CN117877975A (zh) * | 2024-03-11 | 2024-04-12 | 之江实验室 | 利用icp刻蚀二氧化硅的方法 |
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CN102117738B (zh) | 2013-04-03 |
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Denomination of invention: Method for rounding vertex angle of silicon wafer by using polymer containing fluorocarbon Effective date of registration: 20150202 Granted publication date: 20130403 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Date of cancellation: 20170809 Granted publication date: 20130403 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |