CN102109758B - 测试掩模 - Google Patents

测试掩模 Download PDF

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Publication number
CN102109758B
CN102109758B CN2011100571023A CN201110057102A CN102109758B CN 102109758 B CN102109758 B CN 102109758B CN 2011100571023 A CN2011100571023 A CN 2011100571023A CN 201110057102 A CN201110057102 A CN 201110057102A CN 102109758 B CN102109758 B CN 102109758B
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CN
China
Prior art keywords
photomask
mask
gray tone
tone portion
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2011100571023A
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English (en)
Chinese (zh)
Other versions
CN102109758A (zh
Inventor
中西胜彦
吉田光一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN102109758A publication Critical patent/CN102109758A/zh
Application granted granted Critical
Publication of CN102109758B publication Critical patent/CN102109758B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN2011100571023A 2007-05-30 2008-05-29 测试掩模 Expired - Fee Related CN102109758B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007143028A JP5064116B2 (ja) 2007-05-30 2007-05-30 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
JP2007-143028 2007-05-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200810099966XA Division CN101315518B (zh) 2007-05-30 2008-05-29 光掩模检查及制造方法、电子部件制造方法

Publications (2)

Publication Number Publication Date
CN102109758A CN102109758A (zh) 2011-06-29
CN102109758B true CN102109758B (zh) 2013-01-09

Family

ID=40106562

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200810099966XA Expired - Fee Related CN101315518B (zh) 2007-05-30 2008-05-29 光掩模检查及制造方法、电子部件制造方法
CN2011100571023A Expired - Fee Related CN102109758B (zh) 2007-05-30 2008-05-29 测试掩模

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN200810099966XA Expired - Fee Related CN101315518B (zh) 2007-05-30 2008-05-29 光掩模检查及制造方法、电子部件制造方法

Country Status (4)

Country Link
JP (1) JP5064116B2 (ko)
KR (2) KR101070558B1 (ko)
CN (2) CN101315518B (ko)
TW (1) TWI411872B (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI446105B (zh) * 2007-07-23 2014-07-21 Hoya Corp 光罩之製造方法、圖案轉印方法、光罩以及資料庫
JP5372403B2 (ja) * 2008-05-01 2013-12-18 Ｈｏｙａ株式会社 多階調フォトマスク、及びパターン転写方法
CN102193304B (zh) * 2010-03-12 2012-12-05 中芯国际集成电路制造(上海)有限公司 光掩模版和使用所述光掩模版的测试方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
CN102098532B (zh) * 2010-12-20 2012-10-17 沈阳敏像科技有限公司 数字移动终端视频设备灰阶测试图卡及制备方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
CN102866599B (zh) * 2012-10-12 2015-05-06 上海华力微电子有限公司 检测光刻机对图形模糊成像控制能力的方法
CN103676463A (zh) * 2013-11-29 2014-03-26 上海华力微电子有限公司 测试图形设计方法及opc优化方法
CN104977799B (zh) * 2014-04-09 2019-10-18 中芯国际集成电路制造(上海)有限公司 一种优化光掩模图案制备参数的方法
CN106707683B (zh) * 2015-08-04 2020-04-07 中芯国际集成电路制造(上海)有限公司 测试图形的形成方法
JP7017475B2 (ja) * 2018-06-19 2022-02-08 信越化学工業株式会社 フォトマスクブランク関連基板の表面状態の評価方法
CN114688964B (zh) * 2020-12-25 2023-05-23 上海微电子装备（集团）股份有限公司 关键尺寸测量校正方法、系统及计算机可读存储介质
CN113506754B (zh) * 2021-06-28 2024-01-23 上海华虹宏力半导体制造有限公司 光阻剥落的检测方法
CN114102487A (zh) * 2021-11-05 2022-03-01 中国电子科技集团公司第十三研究所 一种用于精密电装装配工艺的辅助夹具
CN114724915A (zh) * 2022-03-02 2022-07-08 北京航空航天大学 刻蚀终点检测方法及装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1401993A (zh) * 2001-08-10 2003-03-12 保谷株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
JP2003307501A (ja) * 2002-04-16 2003-10-31 Hoya Corp グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP2006126532A (ja) * 2004-10-29 2006-05-18 Hitachi High-Technologies Corp 寸法計測走査型電子顕微鏡システム並びに回路パターン形状の評価システム及びその方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11174657A (ja) * 1997-12-17 1999-07-02 Hitachi Ltd マスクパターン外観検査装置および方法
US6466315B1 (en) * 1999-09-03 2002-10-15 Applied Materials, Inc. Method and system for reticle inspection by photolithography simulation
US6778695B1 (en) * 1999-12-23 2004-08-17 Franklin M. Schellenberg Design-based reticle defect prioritization
JP2002184669A (ja) * 2000-12-14 2002-06-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003043665A (ja) * 2001-08-02 2003-02-13 Sony Corp フォトマスクの製造方法
JP4597859B2 (ja) * 2002-07-15 2010-12-15 ケーエルエー−テンカー コーポレイション マイクロリソグラフパターンの製作におけるパターンの認定、パターン形成プロセス、又はパターン形成装置
JP4118137B2 (ja) * 2002-12-27 2008-07-16 富士通株式会社 露光用マスク、半導体装置の製造方法及び欠陥修正要否判定装置
KR20040059911A (ko) * 2002-12-30 2004-07-06 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
KR100548937B1 (ko) * 2004-02-02 2006-02-02 엘지전자 주식회사 필름 마스크를 이용한 스캔 타입 노광장치
JP4351928B2 (ja) 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
JP2006189724A (ja) * 2005-01-07 2006-07-20 Toshiba Corp パターン抽出システム、測定ポイント抽出方法、パターン抽出方法及びパターン抽出プログラム
TWI395053B (zh) * 2005-02-28 2013-05-01 Hoya Corp 灰階罩幕及灰階罩幕毛胚
US7769225B2 (en) * 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US7524593B2 (en) * 2005-08-12 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Exposure mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1401993A (zh) * 2001-08-10 2003-03-12 保谷株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
JP2003307501A (ja) * 2002-04-16 2003-10-31 Hoya Corp グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP2006126532A (ja) * 2004-10-29 2006-05-18 Hitachi High-Technologies Corp 寸法計測走査型電子顕微鏡システム並びに回路パターン形状の評価システム及びその方法

Also Published As

Publication number Publication date
CN102109758A (zh) 2011-06-29
JP5064116B2 (ja) 2012-10-31
KR20110027731A (ko) 2011-03-16
TWI411872B (zh) 2013-10-11
CN101315518A (zh) 2008-12-03
KR101070558B1 (ko) 2011-10-05
KR101306433B1 (ko) 2013-09-09
CN101315518B (zh) 2012-07-25
JP2008298932A (ja) 2008-12-11
TW200912517A (en) 2009-03-16
KR20080106046A (ko) 2008-12-04

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP02 Change in the address of a patent holder

Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

Patentee after: HOYA Corporation

Address before: Tokyo, Japan, Japan

Patentee before: HOYA Corporation

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130109

Termination date: 20170529

CF01 Termination of patent right due to non-payment of annual fee