CN102097318A - 半导体器件的制作方法 - Google Patents
半导体器件的制作方法 Download PDFInfo
- Publication number
- CN102097318A CN102097318A CN2009102011809A CN200910201180A CN102097318A CN 102097318 A CN102097318 A CN 102097318A CN 2009102011809 A CN2009102011809 A CN 2009102011809A CN 200910201180 A CN200910201180 A CN 200910201180A CN 102097318 A CN102097318 A CN 102097318A
- Authority
- CN
- China
- Prior art keywords
- annealing process
- semiconductor device
- laser heat
- laser
- heat annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 66
- 238000000137 annealing Methods 0.000 claims abstract description 59
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 20
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 238000010408 sweeping Methods 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 230000008859 change Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 phosphonium ion Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102011809A CN102097318A (zh) | 2009-12-15 | 2009-12-15 | 半导体器件的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102011809A CN102097318A (zh) | 2009-12-15 | 2009-12-15 | 半导体器件的制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102097318A true CN102097318A (zh) | 2011-06-15 |
Family
ID=44130344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102011809A Pending CN102097318A (zh) | 2009-12-15 | 2009-12-15 | 半导体器件的制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102097318A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315106A (zh) * | 2010-07-08 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | 一种激光热退火方法 |
CN102915916A (zh) * | 2011-08-01 | 2013-02-06 | 联华电子股份有限公司 | 半导体装置以及形成半导体装置的方法 |
CN103117211A (zh) * | 2013-02-20 | 2013-05-22 | 上海华力微电子有限公司 | 一种改善激光退火后晶圆表面电阻均匀性的方法 |
CN104681405A (zh) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 电性匹配的对称电路的获取方法 |
CN104733282A (zh) * | 2013-12-20 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 激光退火扫描方法 |
-
2009
- 2009-12-15 CN CN2009102011809A patent/CN102097318A/zh active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315106A (zh) * | 2010-07-08 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | 一种激光热退火方法 |
CN102315106B (zh) * | 2010-07-08 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | 一种激光热退火方法 |
CN102915916A (zh) * | 2011-08-01 | 2013-02-06 | 联华电子股份有限公司 | 半导体装置以及形成半导体装置的方法 |
CN103117211A (zh) * | 2013-02-20 | 2013-05-22 | 上海华力微电子有限公司 | 一种改善激光退火后晶圆表面电阻均匀性的方法 |
CN104681405A (zh) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 电性匹配的对称电路的获取方法 |
CN104681405B (zh) * | 2013-11-27 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | 电性匹配的对称电路的获取方法 |
CN104733282A (zh) * | 2013-12-20 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 激光退火扫描方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100945544B1 (ko) | 레이저 장치, 레이저 조사방법, 반도체장치 제작방법 | |
CN102097318A (zh) | 半导体器件的制作方法 | |
CN103151388B (zh) | 一种多晶硅薄膜晶体管及其制备方法、阵列基板 | |
JPH10104659A (ja) | 多結晶シリコン薄膜トランジスタの製造方法 | |
CN101789366B (zh) | 分区域激光退火及前馈工艺控制 | |
TWI453825B (zh) | 用於製造半導體裝置的多重毫秒退火技術 | |
JPH09260681A (ja) | 半導体装置の作製方法 | |
US8501638B1 (en) | Laser annealing scanning methods with reduced annealing non-uniformities | |
CN100481335C (zh) | 半导体元件的制造方法 | |
CN101604705A (zh) | 四周环绕栅极鳍栅晶体管及其制作方法 | |
KR102293472B1 (ko) | 레이저 어닐 가공 장치, 반도체 장치의 제조 방법, 및 어모퍼스 실리콘의 결정화 방법 | |
CN102122616B (zh) | 半导体器件的制作方法 | |
CN102290362B (zh) | 一种激光加工中晶圆片定位误差的校正方法 | |
US7682950B2 (en) | Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method | |
US20090021661A1 (en) | Thin-film transistor, thin-film transistor producing method, and display apparatus | |
CN101740389A (zh) | Mos晶体管及其形成方法 | |
CN103117211A (zh) | 一种改善激光退火后晶圆表面电阻均匀性的方法 | |
JP6086394B2 (ja) | 薄膜トランジスタ基板、表示パネル、レーザーアニール方法 | |
CN102681370A (zh) | 光刻套刻方法和提高ldmos器件击穿稳定性的方法 | |
CN102315106B (zh) | 一种激光热退火方法 | |
JP5329865B2 (ja) | 半導体装置及びその製造方法 | |
US10840095B2 (en) | Laser irradiation device, thin-film transistor and thin-film transistor manufacturing method | |
WO2009142103A1 (ja) | レーザ光照射方法およびレーザ光照射装置 | |
US7659187B2 (en) | Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface | |
US8575043B2 (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121102 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121102 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110615 |