CN102081179B - Method for orderly arranging angle substrates to manufacture micro-step reflecting mirror - Google Patents
Method for orderly arranging angle substrates to manufacture micro-step reflecting mirror Download PDFInfo
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- CN102081179B CN102081179B CN2010105927580A CN201010592758A CN102081179B CN 102081179 B CN102081179 B CN 102081179B CN 2010105927580 A CN2010105927580 A CN 2010105927580A CN 201010592758 A CN201010592758 A CN 201010592758A CN 102081179 B CN102081179 B CN 102081179B
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Abstract
The invention relates to a method for orderly arranging angle substrates to manufacture micro-step reflecting mirror, wherein the method comprises the steps of: grinding and polishing left sides and right sides of N substrates, so that the left sides are parallel to the right side; stacking and fixedly splicing the N substrates in turn, and grinding the upper surfaces of various substrates so that the upper surfaces are vertical to the sides; grinding the lower surfaces of various substrates so that the lower surfaces are slopes which are in the same plane; placing a standard block at one end of a base, and placing a wedge-shaped clinohedral on a bed, wherein the left side of the wedge-shaped clinohedral and the right side of the standard block are in the same plane; placing various substrates on the wedge-shaped clinohedral in turn according to a sequence opposite to the grinding sequence, and fixedly splicing the substrates to obtain a step structure. The method of the invention can effectively improve the roughness precision at the surface of the step, the longitudinal size precision and repeatability. The technology has strong controllability and good repeatability; the surface roughness of the micro-reflecting mirror is small, and the flatness is high, so the reflecting mirror can be used on visible and infrared wave bands.
Description
Technical field
The present invention relates to a kind of method for making of little ladder catoptron, particularly a kind of angle substrate that adopts is arranged the method for making little ladder catoptron in order.
Background technology
Little ladder catoptron is a kind of reflection of light device, and application is more and more widely arranged in optical system, as: spectral analysis, beam shaping and optical fiber coupling etc.
Along with optical system is little to volume, the compact conformation direction develops, the device miniature in the optical system changes into an important subject into optical device, and minitype optical device design and fabrication level directly determines the performance of this optical instrument.Little ladder catoptron can through binary optical technique on the substrate through photoetching repeatedly with repeatedly corrode (dry method or wet method) and on multiple materials such as quartz, prepare the ladder microstructure; But; There is following shortcoming in this method: 1, because of alignment repeatedly, horizontal accuracy is difficult to guarantee; 2, corrosion or etching depth are difficult to accurate control, and precision is relatively poor with repeatability; 3, corrode or the mirror surface roughness that etches is difficult to satisfy the optical instrument requirement.
Summary of the invention
It is strong that the technical matters that the present invention will solve provides a kind of process controllability, and micro-reflector Roughness Surface on Control precision is high, the angle substrate of good reproducibility is arranged the method for making little ladder catoptron in order.
In order to solve the problems of the technologies described above, angle substrate of the present invention is arranged the method for making little ladder catoptron in order and is comprised the steps:
(1), select for use the N sheet can process the substrate of solid material as little ladder catoptron, and it is cleaned;
(2), the left surface and the right flank of each substrate ground and polish, make its surfaceness reach 0.1nm～1 μ m, left surface is parallel to right flank, and the thickness of each substrate reaches the setting size; Then each substrate after grinding is carried out clean;
(3), substrate that the N slice lapping is accomplished stacks successively, and the right flank of each substrate is contacted with the left surface of adjacent substrate, stacks afterwards upper surface coplane, the lower surface coplane of each substrate; Be adhesively fixed together with each substrate that will solidify after glue will stack then;
(4), the substrate that will be adhesively fixed together places on the grinding table, grinds the upper surface of each substrate, make its surfaceness reach 0.1nm～1 μ m, and the upper surface of each substrate is perpendicular to its left surface and right flank;
(5), substrate upset that step (four) is completed places on the grinding table, the lower surface that grinds each substrate makes it become an inclined-plane, the inclined-plane coplane of each substrate, and the surfaceness on each inclined-plane reaches 0.1nm～1 μ m; Spend sol solution then and remove curing glue, clean each substrate;
(6), select for use and can process solid material, with its grinding and be polished to the wedge shape clinohedral; The lower surface of said wedge shape clinohedral is a surface level, and left surface is a vertical plane, and upper surface is the inclined-plane, and the angle β between the upper surface of wedge shape clinohedral and its left surface equals the inclined-plane of substrate and the angle between its right flank; The upper surface of wedge shape clinohedral and the surfaceness of lower surface reach 0.1nm～1 μ m; Clean the wedge shape clinohedral;
(7), grind and polishing a slice rectangular parallelepiped as substrate, the surfaceness of the upper surface of substrate reaches 0.1nm～1 μ m; Clean substrate;
(8), grind and polish rectangular parallelepiped as being fixed on suprabasil calibrated bolck, the right flank of calibrated bolck is perpendicular to lower surface, and the surfaceness of right flank and lower surface reaches 0.1nm～1 μ m; Clean calibrated bolck;
(9), calibrated bolck is placed an end of substrate, the upper surface coplane of the lower surface of calibrated bolck and substrate; Then calibrated bolck and substrate are adhesively fixed;
(10), the wedge shape clinohedral is placed in the substrate, make the left surface of wedge shape clinohedral and the right flank coplane of calibrated bolck, the upper surface coplane of the lower surface of wedge shape clinohedral and substrate; Then wedge shape clinohedral and substrate are adhesively fixed;
(11), each substrate is positioned on the wedge shape clinohedral according to from high to low order successively; And make the left surface of high substrate and the right flank coplane of calibrated bolck; The left surface coplane of the right flank of each substrate and adjacent substrate, the upper surface coplane of the inclined-plane of each substrate and wedge shape clinohedral; Then each substrate is adhesively fixed, obtains staircase structure;
The upper surface deposition of (12), staircase structure that step (11) is obtained increases anti-rete and protective film.
The numerical value of N can be confirmed according to the number of steps of little ladder catoptron.
The present invention makes little ladder catoptron owing to adopt the angle substrate to arrange in order, and the height of every layer of ladder can accurately be controlled, and the reflecting surface of each step is that same batch of grinding and polishing forms, so surface shape can both reach consistent with roughness.And reach the parameter of designing requirement, the present invention can effectively improve stepped surfaces roughness precision, longitudinal size precision and repeatability, and process controllability is strong, good reproducibility, and the micro-reflector surfaceness is little, and flatness is high, can be applicable to visible and infrared band.
Described substrate, mass and base material can adopt fused quartz, molybdenum sheet, silit, glass or silicon dioxide; The liquid that removes photoresist of ultra-violet curing glue is sulfuric acid and nitric acid mixed solution or acetone and ether mixed solution.
Increase anti-rete is deposited on the staircase structure that step (11) obtains through magnetron sputtering or radio-frequency sputtering or ion beam sputtering or d.c. sputtering or electron beam evaporation or thermal evaporation method upper surface in the described step (12).
Described increasing on the anti-rete deposits protective film, to prevent the film material oxidation.
Described protective film material adopts MgF
2, Al
2O
3Or SiO
2
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 a, 1b are respectively the front view and the left view of substrate.
Synoptic diagram when Fig. 2 bonds together according to from low to high order for each substrate after grind accomplishing.
Fig. 3 is positioned over the synoptic diagram that is arranged in step on the wedge shape clinohedral for each substrate according to from high to low order.
Embodiment
Angle substrate of the present invention is arranged in order and made number of steps is that the method concrete steps of little ladder catoptron of 20 are following:
(1), select for use 20 silicon chips, glass, silicon dioxide, silit, molybdenum sheet or piezoids etc. can process the substrate of solid material as little ladder catoptron; Shown in Fig. 1 a, 1b, six faces of substrate are respectively left surface 41, right flank 42, upper surface 43, lower surface 44, surface, back 45, front surface 46; Wherein, left surface 41 is the face of broad with right flank 42, and all the other four faces are narrower face; Little ladder catoptron number of steps is 20; Then each substrate is carried out clean, the step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(2), the left surface 41 and the right flank 42 of every substrate ground and polish, make its thickness reach the setting size, left surface 41 is parallel to right flank 42, and every substrate thickness is measure-alike, all is 1.5mm; After the grinding, the left surface 41 of every substrate and the surfaceness of right flank 42 all reach 0.1nm～1 μ m; Substrate to after grinding carries out clean;
The step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(3), 20 steps (two) being ground the substrate of accomplishing neatly stacks successively; The right flank 42 of each substrate is contacted with the left surface 41 of adjacent substrate; Promptly the right flank 42 of first substrate contacts with the left surface 41 of second substrate; The right flank 42 of second substrate contacts with the left surface 41 of the 3rd substrate, And upper surface 43 coplanes of 20 substrates after stacking, lower surface 44 coplanes; Then, front surface 45 and 46 coatings of surface, back infrared or ultra-violet curing glue and curing at each substrate are bonded together each overlapping substrate.
(4), the substrate that is bonded together that step (three) is completed places on the grinding table, grinds the upper surface 43 of each substrate, make its surfaceness reach 0.1nm～1 μ m, and the upper surface 43 of each substrate is perpendicular to its left surface 41 and right flank 42.
(5), the substrate that is bonded together upset that step (four) is completed places on the grinding table, the lower surface 44 that grinds each substrate makes it become an inclined-plane 44 ', the surfaceness on this inclined-plane 44 ' reaches 0.1nm～1 μ m; As shown in Figure 2, inclined-plane 44 ' forms certain angle with the right flank 42 of substrate, and the skewed surface 44 ' of 20 substrates 4 is on same plane; Spend sol solution and remove infrared or ultra-violet curing glue, clean substrate, and the order when grinding discharge successively substrate (as shown in Figure 2, substrate according to 1 ', 2 ', 3 ' ... 20 ' series arrangement.
(6), select for use and can process solid material, grind and polish one and have the wedge shape clinohedral 1 that minimum acute angle is 1.9092 degree, arrange the substrate of making little ladder catoptron in order as the angle substrate; As shown in Figure 3, the upper surface 11 of wedge shape clinohedral 1 is the inclined-plane, and lower surface 12 is a surface level, and left surface 13 is a vertical plane; Require angle β between upper surface 11 and the left surface 13 to equal the angle (α=β=90 °-1.9092 °) between substrate bevel 44 ' and the substrate right flank 42, the surfaceness of upper surface 11, lower surface 12 and left surface 13 reaches 0.1nm～1 μ m; Clean wedge shape clinohedral 1.
(7), grind and polishing a slice rectangular parallelepiped as substrate 2, require the surfaceness of the upper surface 21 of substrate 2 to reach 0.1nm～1 μ m; Clean substrate 2;
(8), grind and polish rectangular parallelepiped as being fixed on the calibrated bolck 3 in the substrate 2, require the right flank 31 of calibrated bolck 3, the surfaceness of lower surface 32 to reach 0.1nm～1 μ m, and the right flank 31 that requires calibrated bolck 3 is perpendicular to lower surface 32; Clean calibrated bolck 3.
(9), the calibrated bolck 3 that will in step (eight), complete places an end of substrate 2, the lower surface 32 of calibrated bolck 3 and upper surface 21 coplanes of substrate 2 apply infrared or ultra-violet curing is gluing connects fixed standard piece 3 and substrate 2.
(10), the wedge shape clinohedral 1 that will in step (six), complete places in the substrate 2 that step (nine) completes, and makes the left surface 13 of wedge shape clinohedral 1 and right flank 31 coplanes of calibrated bolck 3; The lower surface 12 of wedge shape clinohedral 1 contacts with upper surface 21 coplanes of substrate 2 and is adhesively fixed, and has just formed the angle substrate by substrate 2, calibrated bolck 3 and wedge shape clinohedral 1 like this and has arranged the anchor clamps of making little ladder catoptron in order.
(11), 20 substrates that step (five) is made are placed on the anchor clamps that complete in the step (ten) by order stack from high to low; The left surface 41 of feasible the highest substrate (the 20th substrate) and right flank 31 coplanes of calibrated bolck 3; Right flank 42 coplanes of the left surface 41 of the 19th substrate and the 20th substrate ... The left surface coplane of the right flank 42 of the 2nd substrate and the 1st substrate (as shown in Figure 3, substrate according to 20 ' ..., 3 ', 2 ', 1 ' series arrangement.
After treating that 20 step surfaces form, front surface 45 and 46 coatings of surface, back infrared or ultra-violet curing glue and curing at each substrate form 20 ledge structures, and bench height is 50 μ m.
The upper surface deposition of (12), the staircase structure that obtains in step (11) increases anti-rete and protective film.
So far, little ladder catoptron of accomplishing 20 steps is made.
Described substrate 4, calibrated bolck 3, wedge shape clinohedral 1 and substrate 2 materials can adopt fused quartz, molybdenum sheet, silit, glass or silicon dioxide; Solidify glue and can adopt infrared curing glue or ultra-violet curing glue; The solution that removes photoresist can adopt sulfuric acid and nitric acid mixed solution, perhaps acetone and ether mixed solution.
Increase anti-rete is deposited on the staircase structure that step (11) obtains through magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation or thermal evaporation method upper surface in the described step (12).
The described film material that increases that anti-film material adopts golden film or silverskin or other wave band had reflex.
Described increasing on the anti-rete deposits protective film, to prevent the film material oxidation.
Described protective film material adopts MgF
2, Al
2O
3Or SiO
2
Angle substrate of the present invention is arranged in order and made number of steps is that the method concrete steps of little ladder catoptron of 30 are following:
(1), select for use 30 silicon chips, glass, silicon dioxide, silit, molybdenum sheet or piezoids etc. can process the substrate of solid material as little ladder catoptron; Shown in Fig. 1 a, 1b, six faces of substrate are left surface 41, right flank 42, upper surface 43, lower surface 44, surface, back 45, front surface 46 respectively; Wherein, left surface 41 is the face of broad with right flank 42, and all the other four faces are narrower face; The number of steps of little ladder catoptron is 30; Then each substrate is carried out clean, the step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(2), every substrate left surface 41 and right flank 42 are ground and polish, make its thickness reach the setting size, left surface 41 is parallel to right flank 42, and every substrate thickness is measure-alike, all is 2mm.After the grinding, the left surface 41 of every substrate and the surfaceness of right flank 42 all reach 0.1nm～1 μ m; Substrate to after grinding carries out clean;
The step of its clean is:
1) with toluene, acetone, ethanol ultrasonic cleaning 15 minutes, removes organism such as greasy dirt;
2) use the deionized water ultrasonic cleaning, absolute ethyl alcohol dehydration back oven dry.
(3), 30 steps (two) being ground the substrate of accomplishing neatly stacks successively; The right flank 42 of each substrate is contacted with the left surface 41 of adjacent substrate; Promptly the right flank 42 of first substrate contacts with the left surface 41 of second substrate; The right flank 42 of second substrate contacts with the left surface 41 of the 3rd substrate, And upper surface 43 coplanes of 30 substrates after stacking, lower surface 44 coplanes; Then, front surface 45 and 46 coatings of surface, back infrared or ultra-violet curing glue and curing at each substrate are bonded together each overlapping substrate.
(4), the substrate that is bonded together that step (three) is completed places on the grinding table, grinds the upper surface 43 of each substrate, make its surfaceness reach 0.1nm～1 μ m, and the upper surface 43 of each substrate is perpendicular to its left surface 41 and right flank 42.
(5), the substrate that is bonded together upset that step (four) is completed places on the grinding table, the lower surface 44 that grinds each substrate makes it become an inclined-plane 44 ', the surfaceness on this inclined-plane 44 ' reaches 0.1nm～1 μ m; As shown in Figure 2, inclined-plane 44 ' forms certain angle with 42 of the right flanks of substrate, and the inclined-plane 44 ' of 30 substrates 2 is on same plane; Spend sol solution and remove infrared or ultra-violet curing glue, clean substrate, and the order when grinding discharge successively substrate (as shown in Figure 2, substrate according to 1 ', 2 ', 3 ' ... 30 ' series arrangement.
(6), select for use and can process solid material, grind and polish one and have the wedge shape clinohedral 1 that minimum acute angle is 1.7184 degree, arrange the substrate of making little ladder catoptron in order as the angle substrate; As shown in Figure 3, the upper surface 11 of wedge shape clinohedral 1 is the inclined-plane, and lower surface 12 is a surface level, and left surface 13 is a vertical plane; Require upper surface 11 and angle β between the left surface 13 to equal the angle ((α=β=90 °-1.7184 °) between substrate bevel surperficial 44 ' and the substrate right flank 42, the surfaceness of upper surface 11, lower surface 12 and left surface 13 reaches 0.1nm～1 μ m; Clean wedge shape clinohedral 1.
(7), grind and polishing a slice rectangular parallelepiped as substrate 2, require the surfaceness of the upper surface 21 of substrate 2 to reach 0.1nm～1 μ m; Clean substrate 2;
(8), grind and polish rectangular parallelepiped as being fixed on the calibrated bolck 3 in the substrate 2, require the right flank 31 of calibrated bolck 3, the surfaceness of lower surface 32 to reach 0.1nm～1 μ m, and the right flank 31 that requires calibrated bolck 3 is perpendicular to lower surface 32; Clean calibrated bolck 3.
(9), the calibrated bolck 3 that will in step (eight), complete places an end of substrate 2, the lower surface 32 of calibrated bolck 3 and upper surface 21 coplanes of substrate 2 apply infrared or ultra-violet curing is gluing connects fixed standard piece 3 and substrate 2.
(10), the wedge shape clinohedral 1 that will in step (six), complete places in the substrate 2 that step (nine) completes, and makes the left surface 13 of wedge shape clinohedral 1 and right flank 31 coplanes of calibrated bolck 3; The lower surface 12 of wedge shape clinohedral 1 contacts with upper surface 21 coplanes of substrate 2 and is adhesively fixed, and has just formed the angle substrate by substrate 2, calibrated bolck 3 and wedge shape clinohedral 1 like this and has arranged the anchor clamps of making little ladder catoptron in order.
(11), 30 substrates that step (five) is made are placed on the anchor clamps that in step (ten), complete by order stack from high to low; The left surface 41 of feasible the highest substrate (the 30th substrate) and right flank 31 coplanes of calibrated bolck 3; Right flank 42 coplanes of the left surface 41 of the 29th substrate and the 30th substrate ... The left surface coplane of the right flank 42 of the 2nd substrate and the 1st substrate (as shown in Figure 3, substrate according to 30 ' ..., 3 ', 2 ', 1 ' series arrangement.After treating that 30 step surfaces form, front surface 45 and 46 coatings of surface, back infrared or ultra-violet curing glue and curing at 30 substrates form 30 ledge structures, and bench height is 60 μ m.
The upper surface deposition of (12), the staircase structure that obtains in step (11) increases anti-rete and protective film.
So far, little ladder catoptron of accomplishing 30 steps is made.
Described substrate 4, calibrated bolck 3, wedge shape clinohedral 1 and substrate 2 materials can adopt fused quartz, molybdenum sheet, silit, glass or silicon dioxide; Solidify glue and can adopt infrared curing glue or ultra-violet curing glue; The solution that removes photoresist can adopt sulfuric acid and nitric acid mixed solution, perhaps acetone and ether mixed solution.
Increase anti-rete is deposited on the staircase structure that step (11) obtains through magnetron sputtering, radio-frequency sputtering, ion beam sputtering, d.c. sputtering, electron beam evaporation or thermal evaporation method upper surface in the described step (12).
The described film material that increases that anti-film material adopts golden film or silverskin or other wave band had reflex.
Described increasing on the anti-rete deposits protective film, to prevent the film material oxidation.
Described protective film material adopts MgF
2, Al
2O
3Or SiO
2
Claims (1)
1. an angle substrate is arranged the method for making little ladder catoptron in order, it is characterized in that comprising the steps:
(1), select for use the N sheet can process the substrate of solid material as little ladder catoptron, and it is cleaned;
(2), the left surface (41) and the right flank (42) of each substrate ground and polish, make its surfaceness reach 0.1nm～1 μ m, left surface (41) is parallel to right flank (42), and the thickness of each substrate reaches the setting size; Then each substrate after grinding is carried out clean;
(3), substrate that the N slice lapping is accomplished stacks successively, and the right flank (42) of each substrate is contacted with the left surface (41) of adjacent substrate, stacks afterwards upper surface (43) coplane, lower surface (44) coplane of each substrate; Be adhesively fixed together with each substrate that will solidify after glue will stack then;
(4), the substrate that will be adhesively fixed together places on the grinding table, grinds the upper surface (43) of each substrate, make its surfaceness reach 0.1nm～1 μ m, and the upper surface of each substrate (43) is perpendicular to its left surface (41) and right flank (42);
(5), the substrate upset that step (four) is completed places on the grinding table; The lower surface (44) that grinds each substrate makes it become an inclined-plane (44 '); Inclined-plane (the 44 ') coplane of each substrate, and the surfaceness on each inclined-plane (44 ') reaches 0.1nm～1 μ m; Spend sol solution then and remove curing glue, clean each substrate;
(6), select for use and can process solid material, with its grinding and be polished to wedge shape clinohedral (1); The lower surface (12) of said wedge shape clinohedral (1) is a surface level; Left surface (13) is a vertical plane; Upper surface (11) is the inclined-plane, and the upper surface (11) of wedge shape clinohedral (1) and the angle β between its left surface (13) equal the inclined-plane (44 ') of substrate (4) and the angle between its right flank (42); The upper surface (11) of wedge shape clinohedral (1) and the surfaceness of lower surface (12) reach 0.1nm～1 μ m; Clean wedge shape clinohedral (1);
(7), grind and polishing a slice rectangular parallelepiped as substrate (2), the surfaceness of the upper surface (21) of substrate (2) reaches 0.1nm～1 μ m; Clean substrate (2);
(8), grind and polish a rectangular parallelepiped as being fixed on the calibrated bolck (3) in the substrate (2); The right flank (31) of calibrated bolck (3) is perpendicular to its lower surface (32), and the surfaceness of the right flank (31) of calibrated bolck (3) and lower surface (32) reaches 0.1nm～1 μ m; Clean calibrated bolck (3);
(9), calibrated bolck (3) is placed an end of substrate (2), upper surface (21) coplane of the lower surface (32) of calibrated bolck (3) and substrate (2); Then calibrated bolck (3) and substrate (2) are adhesively fixed;
(10), wedge shape clinohedral (1) is placed in the substrate (2), make the left surface (13) of wedge shape clinohedral (1) and right flank (31) coplane of calibrated bolck (3), upper surface (21) coplane of the lower surface (12) of wedge shape clinohedral (1) and substrate (2); Then wedge shape clinohedral (1) and substrate (2) are adhesively fixed;
(11), each substrate (4) is positioned on the wedge shape clinohedral (1) according to from high to low order successively; And make the left surface (41) of the highest substrate and right flank (31) coplane of calibrated bolck (3); Left surface (41) coplane of right flank (42) of each substrate (4) and adjacent substrate (4), upper surface (11) coplane of inclined-plane (44 ') of each substrate (4) and wedge shape clinohedral (1); Then each substrate is adhesively fixed, obtains staircase structure;
The upper surface deposition of (12), staircase structure that step (11) is obtained increases anti-rete and protective film.
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| CN2010105927580A CN102081179B (en) | 2010-12-17 | 2010-12-17 | Method for orderly arranging angle substrates to manufacture micro-step reflecting mirror |
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| CN102789017B (en) * | 2012-07-23 | 2014-11-19 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing multistage micro-mirror through inversely adjusting thick film |
| CN103412358B (en) * | 2013-08-19 | 2015-04-01 | 西安应用光学研究所 | Micro-step reflector manufacturing method based on wedge-shaped glass strips |
| EP4141524A4 (en) * | 2021-07-12 | 2023-03-15 | Key & Core Technology Innovation Institute Of the Greater Bay Area | Laser beam combining device, combined step mirror thereof, and method for calculating fill rate |
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| CN1786742A (en) * | 2005-12-07 | 2006-06-14 | 乐孜纯 | Process for mfg. unidimensional X ray refracted diffraction micro structural component of aluminium material |
| CN1920476A (en) * | 2006-06-30 | 2007-02-28 | 西安交通大学 | Nano multi-step height sample plate and its preparation |
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| KR100503814B1 (en) * | 2003-02-04 | 2005-07-27 | 동부아남반도체 주식회사 | Method for forming gate of semiconductor element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1786742A (en) * | 2005-12-07 | 2006-06-14 | 乐孜纯 | Process for mfg. unidimensional X ray refracted diffraction micro structural component of aluminium material |
| CN1920476A (en) * | 2006-06-30 | 2007-02-28 | 西安交通大学 | Nano multi-step height sample plate and its preparation |
Non-Patent Citations (1)
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| Yasuyuki Unno.Fabrication of N-level binary optical elements by use of Mmask patterns with N in the range of 2M-1+1≤N≤2M.《APPLIED OPTICS》.1998,第37卷(第34期),8012-8020. * |
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