CN101702042A - Terahertz wave band polaroid and preparation method thereof - Google Patents
Terahertz wave band polaroid and preparation method thereof Download PDFInfo
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- CN101702042A CN101702042A CN200910198202A CN200910198202A CN101702042A CN 101702042 A CN101702042 A CN 101702042A CN 200910198202 A CN200910198202 A CN 200910198202A CN 200910198202 A CN200910198202 A CN 200910198202A CN 101702042 A CN101702042 A CN 101702042A
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Abstract
The invention relates to a Terahertz wave band polaroid and a preparation method thereof. The polaroid comprises a substrate and a metal film arranged on the substrate, and the metal film is provided with metal lines which are formed by periodic metal carving grooves. The method of the invention adopts the physical or chemical method to plate a film on the substrate and uses pulse laser to etch the metal film. The wave band of the polaroid are between microwave and infrared wave, and the extinction ratio of the polaroid within 0.1-1.6THz is less than 10%. In the preparation method of the invention, the laser defocusing method is used to etch the metal film, and the width of the etched lines can be controlled by only control the distance between the focus of the laser and the surface of the metal.
Description
Technical field
The invention relates to a kind of polaroid of terahertz wave band.More particularly, a kind of structural design of wire grating of terahertz wave band and the method for laser ablation preparation have been related to.
Background technology
Birth in the eighties in 20th century based on the Terahertz Technology of ultrafast electronics has caused the extensive interest of scientists.Especially after technology such as tera-hertz spectra and imaging were developed, the Terahertz Science and Technology had shown great application potential.But owing to THz wave just was subjected to paying close attention to widely in the nearest more than ten years, so the optical polarization element of this wave band is also unripe as its all band.
Yet about the theory of wire grating as far back as the eighties in 20th century people such as M.G.Moharam just at document [M.G.Moharam and T.K.Gaylord, J.Opt.Soc.Am.73,451 (1983) .] and [M.G.Moharam andT.K.Gaylord, J.Opt.Soc.Am.A3,1780 (1986) .] in the theoretical derivation carried out.On this basis, the wave band polaroid of other section all had comparatively ripe research, as the operation wavelength of Princeton university development in 2005 in the operation wavelength of the polaroid of 1520～1570nm and Switzerland micro-nano technical institute development in 2006 at 300～900nm or the like.Thereby the research of terahertz wave band polarizer has significance for the promotion and the development of Terahertz Technology and science.Our designed wire grating polaroid is according to this Design Theory.In addition, compared with former wire grid polarizer, we also improve the lithographic method of wiregrating.All be to carry out etching in the past by the method for photoetching, the flow process more complicated of manufacture craft, and adopted the method for laser out of focus that metal is carried out etching here.Only need control the width of etching lines by the control laser spot to the distance of metal surface.
Summary of the invention
The object of the present invention is to provide a kind of terahertz wave band polaroid.Terahertz wave band is between microwave and the infrared waves.Compare with its all band, the wire grid polarizers of this wave band does not relate to as yet.This polaroid of making of the present invention in the scope extinction ratio of frequency 0.1THz～1.6THz all less than 10%.
Another object of the present invention is to provide a kind of method for making of terahertz wave band polaroid, and employing is carried out etching with the method for laser out of focus to metallic film and made polaroid.Only need control the width of etching lines by the control laser spot to the distance of metal surface.
Design of the present invention in order to achieve the above object is: at first we will choose suitable material aspect making, base substrate must satisfy the high permeability to THz wave, mainly contain silicon chip, piezoid and glass, and institute's plated film need want high conductivity could guarantee at terahertz wave band THz wave is had high extinction coefficient like this.Secondly, from people such as M.G.Moharam at document [M.G.Moharam and T.K.Gaylord, J.Opt.Soc.Am.73,451 (1983) .] and [M.G.Moharam and T.K.Gaylord, J.Opt.Soc.Am.A3,1780 (1986) .] in theoretical derivation, about wire grating polarization extinction characteristic except outside the Pass having with material, of paramount importance be with wiregrating structural parameters relevant, mainly comprise the cycle of wiregrating, the width of metal wire and the thickness of metallic film.
According to the foregoing invention design, the present invention adopts following technical proposals:
A kind of terahertz wave band polaroid is made up of the metallic film that is plated on substrate and the substrate, it is characterized in that having on described metallic film periodically metal cutting, forms metal wire.
Above-mentioned substrate is the high material of THz wave transmitance.
The material that above-mentioned transmitance is high is silicon chip or piezoid.
The material of above-mentioned metallic film is: the metal material that conductivity is high.
The metal material that above-mentioned conductivity is high is Ag or Au or Al.
The cycle a of above-mentioned metal wire is 30～60 μ m, and the width b of metal wire is 15～40 μ m, and 0.4＜b/a＜0.7.
The thickness d scope of above-mentioned metallic film should be at 1.5～3L, and L is the ingratiate with degree of depth of corresponding metal at terahertz wave band.
A kind of method of making above-mentioned terahertz wave band polaroid is characterized in that: the method plated film on substrate that utilizes physics or chemistry; Utilize laser to the metallic film etching, the concrete operations step is as follows:
[1] substrate material is selected and is cleaned;
[2] the plated film metal material is selected;
[3] utilize physicochemical method plated film;
[4] utilize laser that metallic film is carried out etching;
[5] utilize terahertz time-domain spectroscopic technology that the terahertz wave band polaroid of made is measured.
The above-mentioned physics of plated film on substrate or the method for chemistry are: magnetron sputtering method or vacuum vapor deposition method or sol-gal process.
Above-mentioned when utilizing laser to the metallic film etching, the focus of laser is to regulate in leaving metal surface 50 μ m～300 mu m ranges, so that the width of control etching, be unlikely to laser like this and damage substrate material, removal metallic film that simultaneously again can be more complete, the metal wire cycle a that the laser three-D micro-machining system is set is 30～60 μ m, and adjusting laser spot is 15～40 μ m to the metal table apart from the width b that controls the etching metal wire, and 0.4＜b/a＜0.7.
The present invention and prior art are compared, have following substantial characteristics and remarkable advantage: terahertz wave band polaroid of the present invention is made up of substrate and on-chip metallic film, periodically cutting is arranged on the metallic film, the wave band of this polaroid is between microwave and the infrared waves, this polaroid in the scope extinction ratio of frequency 0.1～1.6THz all less than 10%.In the terahertz wave band polaroid method for making provided by the invention, adopt the method for laser out of focus that metallic film is carried out etching, the width that only needs the control laser spot to control the etching lines to the distance of metal surface gets final product.
Description of drawings
Fig. 1 is the photo of polaroid of the present invention.Use the CCD shot picture after amplifying 20 times with microscope, wherein bright part is that laser ablation partly is 24 μ m, and dark part is metal 30 μ m.
Fig. 2 is the structural representation of the polaroid of made of the present invention.
Fig. 3 is for making the process chart of polaroid of the present invention.
Fig. 4 is the TE ripple transmitance figure of polaroid of the present invention.The polarization direction is vertical with the metal wire direction.
Fig. 5 is polaroid TM ripple transmitance figure of the present invention.The polarization direction is parallel with the metal wire direction.
Fig. 6 is the extinction ratio T of polaroid TE of the present invention and TM
TE/ T
TMDefinition extinction ratio T
TE/ T
TM(T wherein
TEBe the transmitance of TE direction, T
TMTransmitance for the TM direction).
Embodiment
The preferred embodiments of the present invention accompanying drawings is as follows
Embodiment one: referring to Fig. 1 and Fig. 2, terahertz wave band polaroid is made up of the metallic film 2 that is plated on substrate 1 and the substrate, and having periodically on described metallic film 2, the metal cutting forms metal wire.
Embodiment two: present embodiment is identical with embodiment one, and special feature is: the material of described metallic film 2 is the high metal of conductivity, as Ag, Au, Al etc.The cycle a that described periodicity metal cutting forms metal wire is 30 μ m～60 μ m, and the width of metal wire is that b is 15 μ m～40 μ m, and 0.4＜b/a＜0.7.The thickness d of described metallic film 2 should be 1.5～3L, and L is the ingratiate with degree of depth of corresponding metallic film 2 at terahertz wave band.
Embodiment three: referring to Fig. 3, this terahertz wave band polaroid method for making is: utilize the method for the chemistry of physics to carry out plated film on substrate 1, utilize pulse laser to metallic film 2 etchings; The concrete operations step is as follows:
[1] substrate 1 material is selected and is cleaned.
[2] plated film metal 2 materials are selected.
[3] utilize physicochemical method plated film.
[4] utilize laser that metallic film 2 is carried out etching.
[5] utilize terahertz time-domain spectroscopic technology that the terahertz wave band polaroid of made is measured.
The method of described physics or chemistry is a magnetron sputtering method, or vacuum vapor deposition method, or sol-gal process.When utilizing laser to metallic film 2 etchings, the focus of laser is to regulate in leaving metal surface 50 μ m～300 mu m ranges, so that the width of control etching, be unlikely to laser like this and damage substrate material, removal metallic film that simultaneously again can be more complete, the metal wire cycle a that the laser three-D micro-machining system is set is 30～60 μ m, and adjusting laser spot is 15～40 μ m to the metal table apart from the width b that controls the etching metal wire, and 0.4＜b/a＜0.7.
Embodiment four: referring to Fig. 3, present embodiment is identical with embodiment three, so special feature exists, its concrete detail operations step is as follows:
1, is base substrate with the piezoid, substrate is cleaned: in ultrasound wave, washed 10 minutes with acetone earlier, microslide is removed organism.In ultrasound wave, washed 10 minutes with alcohol again, remove common inorganics impurity.Use washed with de-ionized water then, use sulfuric acid and hydrogen peroxide (ratio 1: 1) to clean afterwards again, in ultrasound wave, cleaned five minutes with deionized water at last.
2, selecting metallic film 2 materials for use is Al.
3, with magnetron sputtering (unit type: JGK-450 China Shenyang scientific instrument research institute) method plating Al film.With dc sputtering deposition 16 minutes, power 65w, operating pressure 0.8 handkerchief, the Al film thickness that plates is 250nm ± 10nm.
4, utilize laser that metallic film 2 is carried out etching, concrete steps are as follows:
1. the operational factor of the little processing platform of three-dimensional laser is set, cycles 50 μ m, 200 of groove numbers are because platform stepper error actual cycle is 53 μ m.
2. testing laser power (what we used is that centre wavelength is 800nm, and repetition frequency is the femtosecond pulse of 250KHz), power is 800mW.
3. adjust focal position of laser.At first make focus focus on the metal surface, move up and down by three-dimensional platform control focus then, away from metal surface 170 μ m, the metal width that can obtain etching like this be 24 μ m (in other words the residual metallic line width be 30 μ m).So just obtain us and done the polarization structure (accompanying drawing 2) of making.
5, by terahertz time-domain spectroscopic technology (THZ-TDS) doing polaroid is measured, measurement result is seen accompanying drawing 4,5.
Experimental result is measured the transmitance (part greater than 1 is an experimental error) of TE (polarization direction is vertical with the metal wire direction) and two polarization directions of TM (polarization direction is parallel with metal wire), in accompanying drawing 4, can see, the transmitance on the TE direction from 0.1THz～1.6THz all less than 5%.In accompanying drawing 5, can obtain, in 0.1THz～1THz TM direction transmitance all greater than 80%, up to 1.6THz still all more than 55%.And differ all more than 35% from the transmitance of 1.6THz～2.1THz both direction.TE and TM can well separate.
Accompanying drawing 6 has provided the extinction ratio curve map of being calculated by experimental result, and all 0.1 once, and 1.6THz～2.1THz wave band does not surpass 0.2 yet in 0.1THz～1.6THz wave band extinction ratio.Thereby from figure, can draw, the polaroid optical characteristics that this method is made is fine.
Claims (10)
1. a terahertz wave band polaroid is made up of the metallic film (2) that is plated on substrate (1) and the substrate, it is characterized in that having on described metallic film (2) periodically metal cutting, forms metal wire.
2. polaroid according to claim 1 is characterized in that described substrate (1) is the high material of THz wave transmitance.
3. terahertz wave band polaroid according to claim 2 is characterized in that the high material of described transmitance is silicon chip or piezoid.
4. polaroid according to claim 1 is characterized in that the material of described metallic film (2) is: the metal material that conductivity is high.
5. terahertz wave band polaroid according to claim 4 is characterized in that the high metal material of described conductivity is Ag or Au or Al.
6. terahertz wave band polaroid according to claim 1, the cycle a that it is characterized in that described metal wire are 30～60 μ m, and the width b of metal wire is 15～40 μ m, and 0.4＜b/a＜0.7.
7. terahertz wave band polaroid according to claim 1 is characterized in that the thickness d scope of described metallic film (2) should be at 1.5～3L, and L is the ingratiate with degree of depth of corresponding metal at terahertz wave band.
8. a method of making terahertz wave band polaroid according to claim 1 is characterized in that: utilize the method for physics or chemistry to go up plated film at substrate (1); Utilize laser to the metallic film etching, the concrete operations step is as follows:
[1] substrate (1) material is selected and is cleaned;
[2] plated film metal (2) material is selected;
[3] utilize physicochemical method plated film;
[4] utilize laser that metallic film (2) is carried out etching;
[5] utilize terahertz time-domain spectroscopic technology that the terahertz wave band polaroid of made is measured.
9. the method for making of terahertz wave band polaroid according to claim 8 is characterized in that the physics or the chemical method that go up plated film at substrate (1) are: magnetron sputtering method or vacuum vapor deposition method or sol-gal process.
10. terahertz wave band polaroid method for making according to claim 8 is characterized in that, when utilizing laser to the metallic film etching, the focus of laser is to regulate in leaving metal surface 50 μ m～300 mu m ranges, so that the width of control etching, be unlikely to laser like this and damage substrate material, removal metallic film that simultaneously again can be more complete, the metal wire cycle a that the laser three-D micro-machining system is set is 30～60 μ m, adjusting laser spot is 15～40 μ m to the metal table apart from the width b that controls the etching metal wire, and 0.4＜b/a＜0.7.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943801A (en) * | 2010-07-13 | 2011-01-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed terahertz polarization regulator and regulation and control method thereof |
| CN107907931A (en) * | 2017-11-15 | 2018-04-13 | 北京理工大学 | Realize that transparent conductive oxide is polarized the method with analyzing based on femtosecond laser |
| CN109300922A (en) * | 2018-10-15 | 2019-02-01 | 上海大学 | A kind of efficient terahertz sources chip and preparation method thereof based on electron spin |
| CN109592226A (en) * | 2018-11-20 | 2019-04-09 | 广东汉特科技有限公司 | Application and container of the Terahertz material in tobacco and wine container of the preparation with activation effect |
| CN110361797A (en) * | 2018-03-28 | 2019-10-22 | 福州高意光学有限公司 | A kind of manufacturing method changing laser intensity distribution diaphragm |
| CN110441929A (en) * | 2019-08-14 | 2019-11-12 | 上海大学 | Based on tunable THz wave transmitter of magneto-electronics array and preparation method thereof |
| CN112824942A (en) * | 2019-11-21 | 2021-05-21 | 合肥工业大学 | Terahertz polarizer and preparation method thereof |
| CN113391465A (en) * | 2021-05-24 | 2021-09-14 | 艾普偏光科技(厦门)有限公司 | Terahertz wave-based low-light-level night vision lens and preparation method thereof |
| CN113406810A (en) * | 2021-06-15 | 2021-09-17 | 艾普偏光科技(厦门)有限公司 | Visible light photochromic lens based on surface plasmon resonance and preparation method thereof |
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2009
- 2009-11-03 CN CN200910198202A patent/CN101702042A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943801A (en) * | 2010-07-13 | 2011-01-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed terahertz polarization regulator and regulation and control method thereof |
| CN107907931A (en) * | 2017-11-15 | 2018-04-13 | 北京理工大学 | Realize that transparent conductive oxide is polarized the method with analyzing based on femtosecond laser |
| CN110361797A (en) * | 2018-03-28 | 2019-10-22 | 福州高意光学有限公司 | A kind of manufacturing method changing laser intensity distribution diaphragm |
| CN109300922A (en) * | 2018-10-15 | 2019-02-01 | 上海大学 | A kind of efficient terahertz sources chip and preparation method thereof based on electron spin |
| CN109592226A (en) * | 2018-11-20 | 2019-04-09 | 广东汉特科技有限公司 | Application and container of the Terahertz material in tobacco and wine container of the preparation with activation effect |
| CN110441929A (en) * | 2019-08-14 | 2019-11-12 | 上海大学 | Based on tunable THz wave transmitter of magneto-electronics array and preparation method thereof |
| CN112824942A (en) * | 2019-11-21 | 2021-05-21 | 合肥工业大学 | Terahertz polarizer and preparation method thereof |
| CN113391465A (en) * | 2021-05-24 | 2021-09-14 | 艾普偏光科技(厦门)有限公司 | Terahertz wave-based low-light-level night vision lens and preparation method thereof |
| CN113406810A (en) * | 2021-06-15 | 2021-09-17 | 艾普偏光科技(厦门)有限公司 | Visible light photochromic lens based on surface plasmon resonance and preparation method thereof |
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Open date: 20100505 |