CN105158836A - Terahertz polarizing plate based on dual-layer metal wire gating structure - Google Patents
Terahertz polarizing plate based on dual-layer metal wire gating structure Download PDFInfo
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- CN105158836A CN105158836A CN201510646141.5A CN201510646141A CN105158836A CN 105158836 A CN105158836 A CN 105158836A CN 201510646141 A CN201510646141 A CN 201510646141A CN 105158836 A CN105158836 A CN 105158836A
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- metal wire
- wire grid
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- grid construction
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
Abstract
The invention discloses a terahertz polarizing plate based on a dual-layer metal wire gating structure. The terahertz polarizing plate comprises a silicon substrate 1 and silicon nitride layers 2 arranged on the upper surface and the lower surface of the silicon substrate. Protrusions 3 that are parallel to each other on a same plane and are arranged periodically are formed on the silicon nitride layers 2 based on processing; the parts among the protrusions 3 of the silicon substrate are processed to form grooves 4 parallel to each other; and a metal thin film 5 with a wire gating structure grows on the surfaces of the protrusions 3 and the internal bottoms surfaces of the grooves 4. According to the invention, a transverse magnetic field wave of the polarizing plate has high transmittance; and the extinction ratio is extremely high. Because of the dual-face symmetric structure, no direction distinguishment exists during application. Besides, when the polarizing plate is manufactured, upper and lower etched grooves do not need to be aligned and are only parallel to each other in an up-down mode. Therefore, the provided polarizing plate has advantages of simple processing technology and short processing period and the like.
Description
Technical field
The present invention relates to a kind of terahertz polarization sheet field, be specifically related to a kind of terahertz polarization sheet based on double-level-metal wire grid construction.
Background technology
THz wave refers to that frequency is between 0.1 Terahertz-10 Terahertz, and wavelength is positioned at the electromagnetic wave of 3 millimeter of-30 micrometer range.It can penetrate as clothing, rubber, pottery, wood, plastics etc., and its photon energy is extremely low, can be widely used in the fields such as communication, radar, imaging, medical science.
Polaroid is optical element important in the systems such as optical information processing, optical measurement, optical communication, has therefore been widely used in the fields such as optical fiber communication, liquid crystal display, optical projection, Photoelectric Detection.Wherein extinction ratio weighs the major parameter of polarizer performance, is defined as 10 × log10 (T
tM/ T
tE), extinction ratio is higher, and polarizer performance is more excellent, wherein T
tMand T
tErepresent wire-grid polarizer TM and TE polarized wave transmissivity respectively.In terahertz wave band field, modal polarizer can be divided into three kinds: the first is liquid crystal polarizer, and the second is Brewster angle polaroid, and the third is wire grating polaroid.The polarization property that most widely used liquid crystal polarizer is specifically good, but operating frequency range is narrower, complex structure, and cost is high, and its application is restricted.It is narrow that Brewster angle polaroid also also exists applicable wavelengths, the shortcoming that extinction ratio is not high.Traditional terahertz wave band polarizer is without support metal wire-grid polarizer, owing to not having base material, loss is very low, is widely used in terahertz wave band, but the cycle is unified, the processing of spacing uniform bending metals line structure is got up, and difficulty is very large, and fragile structure, extinction ratio are lower.2009, the people such as Yamada utilize micro-processing method to machined on a silicon substrate aluminum metal wire-grid polarizer that the cycle is 3 μm, within the scope of 0.5 ~ 3.0THz, extinction ratio is better than 23dB, but the Fresnel reflection that the silicon substrate material of high-k causes, make its loss higher.The same year, the people such as YongMa utilized photoetching process on high-density polyethylene material, machined Terahertz wire-grid polarizer, achieve lower loss, but improve extinction ratio, will the less wire grid construction of manufacturing cycle, this just needs to adopt that cost is higher, nano print that difficulty is larger and processing technology, and this technique exists and is difficult to the shortcoming preparing terahertz wave band large scale wire-grid polarizer.2010, the people such as LinSun proposed the polarizer structure design utilizing double-deck wiregrating to realize High Extinction Ratio in theory.2012, the people such as Deng machined double-deck golden wire-grid polarizer on a silicon substrate, compared conventional monolayers wire-grid polarizer, and extinction ratio obtains and increases substantially.But above several wire-grid polarizer still also exists the problem that structure is too complicated, extinction ratio is not fully up to expectations.In view of this, find a kind of preparation technology simple, the terahertz polarization sheet that extinction ratio is high is the problem that this area needs solution badly.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of terahertz polarization sheet based on double-level-metal wire grid construction.
For achieving the above object, the invention provides following technical scheme:
A kind of terahertz polarization sheet based on double-level-metal wire grid construction, comprise silicon base 1, the silicon nitride layer 2 of silicon base upper and lower surface, described silicon nitride layer 2 is processed into the projection 3 be parallel to each other in periodic arrangement at same plane, silicon base between protruding 3 is processed to form the groove 4 be parallel to each other, generates on protruding 3 surfaces and groove 4 inner bottom surface the metallic film 5 having wire grid construction.
Preferably, upper and lower surface formed projection 3 between and between groove 4 align.
Preferably, described silicon base 1 is the twin polishing intrinsic high resistant silicon chip that 500um ~ 600um is thick, and described silicon nitride layer 2 thickness is 200 ~ 300nm, described protruding 3 thickness are consistent with silicon nitride layer, described groove bottom width 2 ~ 3um, dark 1 ~ 3um, the spacing between described groove is 4um.
Preferably, described protruding 3 sides are trapezoidal, and recess sidewall can be prevented like this to be coated with golden film.
Preferably, concave profile or plane acutangulate with ground shape are processed in described groove 4 side.
Preferably, described metallic film be aluminium, one in the film that formed of the material of gold, silver, copper.
Preferably, described metallic film is the film that gold is formed, and thickness is 100nm ~ 200nm.
Preferably, the scope of application of described polaroid is within the scope of 0.5 – 2.0 Terahertz, and the transmitance of transverse electric field wave is 10
-3-10
-4, the transmitance of transverse magnetic field wave is on average about 0.46, and extinction ratio is about 60dB.
Beneficial effect of the present invention is: polaroid transverse magnetic field wave disclosed by the invention has higher transmitance, and extinction ratio is very high, owing to being double-sided symmetrical structure, does not have direction to distinguish during use.In addition, the groove etched up and down when the present invention makes, without the need to alignment, only needs parallel up and down, and therefore the present invention also has processing technology simply, the advantages such as the process-cycle is shorter.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing and being described:
The polaroid side cutaway view of Fig. 1 prepared by embodiment 1;
The polaroid macroscopic view overall diagram of Fig. 2 prepared by embodiment 1;
The extinction ratio of polaroid of Fig. 3 prepared by embodiment 1 and the curve map of frequency relation;
The polaroid side cutaway view of Fig. 4 prepared by embodiment 2.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Embodiment 1
Polaroid side cutaway view prepared by the present embodiment as shown in Figure 1, the polaroid of the present embodiment comprises the thick twin polishing intrinsic high resistant silicon chip (100) 1 of 500um, the resistivity of silicon chip is greater than 10000 Ω, silicon chip surface utilizes PECVD method to carry out nitrogen treatment, and the thickness of nitration case is about 200nm.
Then utilize chemical wet etching technology, the wherein surfaces nitrided silicon nitride layer 2 of one side is processed into the projection 3 be parallel to each other in periodic arrangement at same plane, and described protruding 3 sides are that upper base is less than go to the bottom trapezoidal, and etching gas selects SF6.Then utilize in the silicon base of the method for wet etching between protruding 3 and be processed to form the groove 4 be parallel to each other, the shape of retention surface silicon nitride, groove bottom width 2um, dark 1um, spacing between described groove is 4um, and concave profile is processed in groove 4 side, and corrosive liquid used is HF:HNO
3=1:99 (volume ratio), etching time is about 2-3 minutes.Utilize backside alignment techniques, another side is etched the shape with protruding 3 and groove 4 of corresponding symmetry.Then utilize evaporation coating that golden evaporation is generated the metallic film 5 having wire grid construction, thickness 100nm on protruding 3 surfaces and groove 4 inner bottom surface, form Fig. 1 structure, Fig. 2 is overall diagram.
The quality of polaroid can represent by extinction ratio,
wherein, Transmittance
tMrepresent the terahertz light transmitance that linear polarization is vertical with metal stripe direction, Transmittance
tErepresent the terahertz light transmitance that linear polarization is parallel with metal stripe direction.Experimental verification, metal grating thickness is thicker, and the etched recesses degree of depth is darker, and polaroid extinction ratio is larger.Adopt etching depth 1um in this example, the parameter of metal grating thickness 100nm, it is on average about 60dB in terahertz wave band extinction ratio, reaches as high as 87dB, as shown in Figure 3.
Embodiment 2
Polaroid side cutaway view prepared by the present embodiment as shown in Figure 4, the polaroid of the present embodiment comprises the thick twin polishing intrinsic high resistant silicon chip (100) 1 of 600um, the resistivity of silicon chip is greater than 10000 Ω, silicon chip surface utilizes PECVD method to carry out nitrogen treatment, and the thickness of nitration case is about 300nm.
Then utilize chemical wet etching technology, the wherein surfaces nitrided silicon nitride layer 2 of one side is processed into the projection 3 be parallel to each other in periodic arrangement at same plane, and described protruding 3 sides are that upper base is greater than go to the bottom trapezoidal, and etching gas selects SF6.Then utilize in the silicon base of the method for wet etching between protruding 3 and be processed to form the groove 4 be parallel to each other, the shape of retention surface silicon nitride, groove bottom width 2um, dark 1um, spacing between described groove is 4um, plane acutangulate with ground shape is processed in groove 4 side, and corrosive liquid used is HF:HNO
3=1:99 (volume ratio), etching time is about 2-3 minutes.Utilize backside alignment techniques, another side is etched the shape with protruding 3 and groove 4 of corresponding symmetry.Then utilize evaporation coating that golden evaporation is generated the metallic film 5 having wire grid construction, thickness 200nm with groove 4 inner bottom surface on protruding 3.
Terahertz polarization sheet of the present invention can be found out by above embodiment, utilize surfaces nitrided silicon to be made into structure as shown in the figure, can allow perpendicular to metal grating direction THz wave through, reflected parallel is in the THz wave in metal grating direction.Cost of manufacture of the present invention is low, and technological process is simple, and making of can maximizing, there is good application prospect.
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (8)
1. the terahertz polarization sheet based on double-level-metal wire grid construction, comprise silicon base (1), the silicon nitride layer (2) of silicon base upper and lower surface, it is characterized in that, described silicon nitride layer (2) is processed into the projection (3) be parallel to each other in periodic arrangement at same plane, silicon base between protruding (3) is processed to form the groove (4) be parallel to each other, generates on protruding (3) surface and groove (4) inner bottom surface the metallic film (5) having wire grid construction.
2. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 1, is characterized in that, between the projection (3) that upper and lower surface is formed and alignment between groove (4).
3. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 1, it is characterized in that, described silicon base (1) is the thick twin polishing intrinsic high resistant silicon chip of 500um ~ 600um, described silicon nitride layer (2) thickness is 200 ~ 300nm, described projection (3) thickness is consistent with silicon nitride layer, described groove bottom width 2 ~ 3um, dark 1 ~ 3um, the spacing between described groove is 4um.
4. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 1, it is characterized in that, described projection (3) side is trapezoidal.
5. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 1, it is characterized in that, concave profile or plane acutangulate with ground shape are processed in described groove (4) side.
6. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 1, is characterized in that, described metallic film is aluminium, one in film that the material of gold, silver, copper is formed.
7. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claim 3, is characterized in that, described metallic film is the film that gold is formed, and thickness is 100 ~ 200nm.
8. a kind of terahertz polarization sheet based on double-level-metal wire grid construction according to claims 1 to 7, is characterized in that, the scope of application of described polaroid is within the scope of 0.5 – 2.0 Terahertz, and the transmitance of transverse electric field wave is 10
-3-10
-4, the transmitance of transverse magnetic field wave is 0.45 ~ 0.47, and extinction ratio is about 60dB.
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| CN201510646141.5A CN105158836B (en) | 2015-10-08 | 2015-10-08 | A kind of terahertz polarization piece based on double-level-metal wire grid construction |
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Cited By (4)
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| CN107290815A (en) * | 2016-03-31 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Wire grid construction and its manufacture device |
| CN107942571A (en) * | 2017-09-22 | 2018-04-20 | 友达光电股份有限公司 | Wire grid polarizer and display panel using the same |
| CN110998383A (en) * | 2018-07-26 | 2020-04-10 | 迪睿合株式会社 | Polarizing plate and optical device |
| CN113528343A (en) * | 2021-07-19 | 2021-10-22 | 中国科学院重庆绿色智能技术研究院 | Adherent cell culture device for terahertz wave irradiation |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290815A (en) * | 2016-03-31 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Wire grid construction and its manufacture device |
| CN107942571A (en) * | 2017-09-22 | 2018-04-20 | 友达光电股份有限公司 | Wire grid polarizer and display panel using the same |
| CN110998383A (en) * | 2018-07-26 | 2020-04-10 | 迪睿合株式会社 | Polarizing plate and optical device |
| CN110998383B (en) * | 2018-07-26 | 2022-03-22 | 迪睿合株式会社 | Polarizing plate and optical device |
| US11500140B2 (en) | 2018-07-26 | 2022-11-15 | Dexerials Corporation | Polarizing plate and optical apparatus having tip portions with continuous curved surface |
| CN113528343A (en) * | 2021-07-19 | 2021-10-22 | 中国科学院重庆绿色智能技术研究院 | Adherent cell culture device for terahertz wave irradiation |
| CN113528343B (en) * | 2021-07-19 | 2022-08-02 | 中国科学院重庆绿色智能技术研究院 | Adherent cell culture device for terahertz wave irradiation |
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| CN105158836B (en) | 2017-07-04 |
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