CN101762971A - Method for manufacturing fiber array V-shaped groove by photoetching technology - Google Patents
Method for manufacturing fiber array V-shaped groove by photoetching technology Download PDFInfo
- Publication number
- CN101762971A CN101762971A CN200910264705A CN200910264705A CN101762971A CN 101762971 A CN101762971 A CN 101762971A CN 200910264705 A CN200910264705 A CN 200910264705A CN 200910264705 A CN200910264705 A CN 200910264705A CN 101762971 A CN101762971 A CN 101762971A
- Authority
- CN
- China
- Prior art keywords
- shaped groove
- fiber array
- groove
- photoetching technique
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Mechanical Coupling Of Light Guides (AREA)
Abstract
The invention relates to a method for manufacturing a fiber array V-shaped groove by a photoetching technology, comprising the following steps of: plating a protective layer on a cleaned fusing quartz substrate; spreading a photoresist layer on the protective layer, throwing photoresist, and drying; covering a mask plate on the quartz substrate processed by the process; exposing under ultraviolet light; removing the light exposing part of the photoresist in a developing way, and then cleaning and drying; etching the light exposing part of the protective layer positioned on the quartz substrate by a wet method through hydrofluoric acid corrosion liquid; finally forming the V-shaped groove, and removing the protective layer. The quartz V-shaped groove manufactured by the method has great high precision, can achieve the photoetching geometric dimension precision of +/-0.10 micrometer and has the same materials with fibers, waveguide chips and cover plates by using fusing quartz glass, thereby greatly enhancing the reliability and the heat stability of a PLC (Programmable Logical Controller) device; in addition, the invention has great low material cost, very low equipment investment cost and very high productivity.
Description
Technical field
The present invention relates to a kind of method of making fiber array V-shaped groove, especially a kind of method that adopts photoetching technique to make fiber array V-shaped groove.
Background technology
FTTX, FTTB are that Fiber to the home (building), are the developing direction of broadband networks of future generation.Now except that Japanese Korea S, the country that development that China is that Fiber to the home in the world relatively takes the lead.At present, domestic just in large-scale promotion Fiber to the home project.Device relatively more crucial during Fiber to the home is exactly optical waveguide optical fibre array shunt (PLC SPILITER).One of Primary Component in the shunt is exactly the manufacturing of optical fiber stern fast array.And the key in the fiber array is exactly the large-scale production of quartzy V-type groove.
The V groove of fiber array is a vital part of manufacturing PLC, need satisfy following requirement:
1. precision is very high, and the spacing between groove and the groove is nano level precision (+/-0.1 micron);
2. anufacturability is good, is suitable for large-scale production;
3. to adopt fused quartz little, good stability as the modification of substrate V-type groove;
4. material cost and low cost of manufacture.
Produce fiber array V-shaped type groove at present both at home and abroad and mostly be divided into two classes, the first kind adopts the method for machining, its advantage is to adopt the corundum cutter, can make the V angle of the v-groove and shape arbitrarily, but the method has a lot of weak points: 1, because quartz glass hardness is very high, the life-span of corundum shaping cutter can be very short when cutting, after having cut some grooves, the shape of shaping tool and angle will change, so that the shape of V groove has produced variation, can not satisfy accuracy requirement, so want continuous reconditioning corundum cutting knife,, but just reduced the precision and the production efficiency of V groove like this with the shape of guaranteeing cutting knife and sharp.2, the ultraprecise process equipment is very expensive, mostly is from external import at present, and same corundum cutter also are very expensive, and still easily-consumed products make the processing cost increase simultaneously.3, because the reconditioning of corundum cutter greatly reduces production efficiency.4, make the V-shaped groove of multiple-grooved in cutting, as greater than 32 grooves the time,, therefore make holding at high price of fiber array V-shaped shape groove because precision problem reduces the qualification rate of product greatly, therefore adopting the mechanical means machning v grooves is that cost is very high.
The silicon wafer that second class adopts is as the method processing V-type groove of base material with wet corrosion, the method also is the technology that has adopted photoetching, the anisotropic characteristics of silicon chip have been utilized, on the face of (100) on the silicon chip and (110), with KOH+2PA mixed water liquation corrosion, erode away the inclined-plane of band angle, formed the base angle and be 90 ° V-type groove, the method has following advantage: 1, adopted the anisotropic corrosive property of silicon wafer, can very easily obtain the splendid V-type groove of shape.2, owing to adopted mask plate, the processing technology of photoetching makes the V-type groove have very high precision, can reach the nanometer utmost point.3, for what of groove, such as greater than 32 grooves, it is made precision and still can reach, and is not subjected to the restriction of V groove quantity, almost is identical qualification rate.4, highly efficient in productivity, cost of investment is lower, has the superiority of large-scale production.Its shortcoming is as follows: 1, maximum scarce limit is exactly to use on the material of silicon wafer, because being all material, the PLC optical fibre device all adopt quartz to make, as optical fiber, the PLC waveguide, chip, cover plate, bearing etc., all be to adopt quartz as starting material, and silicon wafer has and quartzy a lot of different physics and chemical characteristics, fused silica glass has good uniformity, the hardness height, not yielding, more important is that quartzy thermal expansivity is 4*10-7, and silicon wafer is 5.0*10-6, difference with an order of magnitude is when these critical materials fit together, (40 ℃ of total temperature tests, + 85 ℃) and (85 ℃ of temperature during fail-test, 85% relative humidity), the V-type groove that silicon materials are done will produce certain labile factor, and causing integrity problem easily, therefore most of PLC factory does not adopt silicon wafer to do the V-type groove.2, silicon crystal material price height, when the baseplate material that adopts the thick silicon chip of 1mm as the V-type groove, its material cost is the height of the several times of quartz base plate.3, it is relatively poor that silicon wafer is made the manufacturability of V-type groove, and material is too crisp, very easily damaged in process, and fixing when bonding with glue, surface treatment is an essential processing step.4, particularly when grinding the end face of fiber array, silicon wafer and quartz glass cover plate and silica fibre are ground together, because material, hardness, fragility and particle is different, can reduce the end surface grinding quality and the efficient of fiber array.So major part still adopts fused silica glass to make the V groove at present.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of method that adopts photoetching technique to make fiber array V-shaped groove is provided, precision is high, good reliability, cost are low.
According to technical scheme provided by the invention, described employing photoetching technique is made the method for fiber array V-shaped groove, comprises the steps:
(1) on the fused silica substrate after the cleaning, plates layer protective layer;
(2) on described protective seam, be coated with one deck photoresist, and whirl coating, oven dry;
(3) covering mask plate through on the quartz base plate of above technology, again ultraviolet photoetching;
(4) the exposure part in the photoresist, cleaning, drying are then removed in development;
(5) the exposure part of protective seam on the employing hydrofluorite corrosive liquid wet etching quartz base plate forms the V-type groove at last;
(6) remove described protective seam.
Described protective seam is the chromium layer, removes described chromium layer with chromic acid in the step 6.Described chromium layer adopts the method for high temperature ion sputtering to be plated on described fused silica substrate surface.The thickness of chromium layer is 2000 ± 200A °.
90 °～100 ° of described V-type groove two sides angles.
Described V-type groove depth is 50～60 microns.
Fused silica substrate after the described cleaning is meant the fused silica substrate of the surface having been carried out grinding and polishing.
On described chromium layer after exposure, the development, form live width and be less than or equal to 2 microns window.
The quartzy V-type groove made from the present invention has the following advantages:
1, precision is high, can reach photoetching ± 0.10 micron geometric accuracy, and not how much influenced by the V groove, even 64 grooves also can reach precision like this.2, because the V-type groove has also adopted fused silica glass, have the material the same with optical fiber, waveguide chip and cover plate, reliability, the thermal stability of PLC device are greatly improved, and when end surface grinding, also can grind together and produce harmful effect because of silicon materials and quartz material.3, cost is extremely low, because the substrate cost of fused quartz is very low, has only the part of silicon chip, and cost of manufacture is also low, and the qualification rate height is except the loss of back processing usefulness, it almost is 100% that photoetching corrosion becomes the qualification rate of V-type groove, therefore has very strong cost advantage.4, the investment goods cost is very low, and production capacity is very big, and can unrestricted expansion production, to satisfy the demand that market constantly enlarges.
Description of drawings
Fig. 1 is the rectangular channel sectional view that the dry etching fused quartz is made.
Fig. 2 is the synoptic diagram of fiber placing in the quartzy rectangular channel of Fig. 1.
The V-shaped groove sectional view of Fig. 3 wet etching silicon wafer fabrication.
Fig. 4 is the synoptic diagram of fiber placing in the silicon V shape groove of Fig. 3.
The V-shaped groove sectional view that Fig. 5 the method for the invention is made.
Fig. 6 is the synoptic diagram of fiber placing in the quartzy V-shaped groove of Fig. 5.
Fig. 7 is the V-type groove manufacture craft schematic flow sheet of fused silica substrate of the present invention.
Among the figure, mask protective seam 1, photoresist 2, mask plate 3, V-type groove 4, fused silica substrate 5, optical fiber 6, quartzy cover plate 7, ultraviolet glue 8, monocrystalline silicon piece 9.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
As shown in Figure 7: described employing photoetching technique is made the method for fiber array V-shaped groove, comprises the steps:
(1) the cleaning quartz base plate plates layer protective layer on quartz base plate;
(2) on protective seam, be coated with one deck photoresist, and whirl coating, oven dry;
(3) covering mask plate through on the quartz base plate of above technology, again ultraviolet photoetching;
(4) the exposure part in the photoresist is removed in development;
(5) wet etching is removed the exposure part in the protective seam, then oven dry;
(6) the exposure part of protective seam on the wet method hydrofluorite corrosion quartz base plate produces the V-type groove at last;
(7) Yong Chrome corrosive liquids are removed protective seam, clean up the quartz base plate that has the V groove again;
(8) with scribing machine quartz base plate is cut, the V groove is cut into final products by needed size.
Characteristics of the present invention are:
1, adopts fused quartz as base material, and do not adopt silicon wafer as base material.
2, adopt isotropy, promptly to deep and side corroding method simultaneously, rather than anisotropic approaches, with wet etching (hydrofluorite corrosive liquid), as the method for corrosion V groove, on quartz base plate, etch the fiber array V-shaped groove that is used for of approximate 90 ° (90～100).The prescription of hydrofluorite corrosive liquid and etching time temperature all can have influence on the quality of V groove.
3, high precision mask plate and photoetching technique have been adopted, to make the method for high-precision fiber array V-shaped type groove.Described V-type groove depth generally can be accomplished 50～60 microns greater than 50 microns.
4, adopted chromium layer about quartz base plate surface plating one layer thickness 2000A,, can accomplish that behind exposure imaging live width has only several microns window as the protection sacrifice layer.The present invention has adopted the super narrow window of high precision, makes the width of photoetching can reach 2 microns or littler, makes the degree of depth of groove and shape more near V-type.
The wet etching method has formed the perfect V-type groove on quartz base plate top layer, and the chromium protective seam has prevented that fully the undercutting phenomenon from taking place simultaneously, makes V-type groove side direction 45 degree inclined-planes can reach a complete plane.To guarantee the accurate location of optical fiber.The present invention adopts the method for high temperature ion sputtering, has plated one deck 2000 ± 200A ° chromium protective seam.Before chromium coating; grinding and polishing has been carried out on the quartz glass surface, and there is extraordinary adhesion on chromium plating protective seam and quartz glass surface, have solved the undercutting problem; make the flatness on 90 ° inclined-plane, V-shaped groove both sides, light law and precision can both satisfy the requirement of product.
The comparison of design of the present invention and making principle and other two kinds of method for makings.Below be three kinds and make principle:
Method one:
Method one also is to adopt fused quartz as substrate, and has adopted mask plate, the protective seam of making; and adopted dry method ion etching on the surface, because the effect of protective seam, etch the rectangular channel of vertical edge at quartz surfaces; groove width 0.1 μ m; groove depth 0.02 μ m, as shown in Figure 1, because rectangular channel is very shallow; when the processing fiber array, cause optical fiber to go into the difficulty of groove; use the beneath glue consumption deficiency of the quantity not sufficient of ultraviolet glue, particularly optical fiber simultaneously, make the bonding force deficiency of optical fiber and rectangular channel bottom.Optical fiber contacts two sidelines, porch that only depend on rectangular channel with the location of rectangular channel simultaneously, as shown in Figure 2, this contact position is a sharp keen straight elegant end line, very easily generation is collapsed scarce, will cause the inaccurate and unexpected pressure in the location of optical fiber, thereby the optical path loss when causing the optical fiber coupling increases, and this square type groove location does not necessarily have the V-type groove to come well to the fiber orientation precision.
Method two:
Method two is to adopt monocrystalline silicon piece as base material, makes the shielding protective seam on the silicon chip surface, has adopted the characteristics of monocrystalline silicon anisotropic, corrodes with wet process acid in (100) and (110) two different crystalline lattice directions, has just formed the V-type groove of a silicon wafer.As shown in Figure 3, form a step with mask protection layer width on the silicon chip top layer, therefore limited the degree of depth of optical fiber cut-in groove; can conspicuously see as shown in Figure 4; optical fiber and V-type groove to go into groove fine, the beveled tangentially shape of optical fiber and V groove becomes best localization method.But because the degree of depth of groove is not enough, optical fiber is floated on the V groove, cover plate is raised, the amount of fixing glue increases, make cover plate and V slot pitch from increase, this can reduce the reliability of fiber array, under hot and humid condition, moisture is easy to enter between glue and quartz, the silicon chip, and influences the reliability of device.
Method of the present invention:
The implementation method that the present invention adopts has nearly all advantage.As can be seen from Figure 5; the mask protection layer is very wide; and the window of photoetching is very narrow; have only several microns; owing to adopted wet etching (hydrofluorite corrosive liquid); make that therefore each just obtained 45 ° fabulous V-type groove sidewall to corrosion simultaneously to corrosive liquid simultaneously in the degree of depth and side, forms the well approximate 90 ° of V-type grooves of a quality at last.As can be seen from Figure 5, at quartz plate surface neither one platform, a step is only arranged in the bottom of groove, this makes the dead angle that is difficult for herein with the glue fixed fiber time produce bubble.As can be seen from Figure 6, optical fiber is gone into groove in the V groove fine, and 45 ° of sidewalls of optical fiber and V groove form good tangent position, can improve locating accuracy greatly.While optical fiber sinks in the groove darker, and cover plate and V groove are pressed close to, and reduces the glue amount, thereby has improved stability and reliability.
To sum up; the present invention is exactly the processing technology that has adopted SIC (semiconductor integrated circuit) a---photoetching technique; select fused silica glass as base material; has good little processing characteristics; thermal diffusivity, stability; have more identical material with optical fiber and chip and thermal expansion; and utilized quartz glass in isotropic feature; with chromium diaphragm and wet etching quartz base plate; form 90 ° V-type groove (degree of depth is 0.05 millimeter) on the quartz base plate top layer, be fixed on the V-type groove array quartz plate optical fiber is point-device.
The present invention adopts fused quartz as base material; key is to have solved how to form the V-type groove when hydrofluoric acid solution corrodes; we have designed special mask plate; adopted the chromium protective seam at quartz surfaces; the ultraviolet glue coating; expose, develop, remove photoresist, step such as corrosion, make the V-type groove of quartz substrate at last.
Claims (8)
1. adopt photoetching technique to make the method for fiber array V-shaped groove, it is characterized in that comprising the steps:
(1) on the fused silica substrate after the cleaning, plates layer protective layer;
(2) on described protective seam, be coated with one deck photoresist, and whirl coating, oven dry;
(3) covering mask plate through on the quartz base plate of above technology, again ultraviolet photoetching;
(4) the exposure part in the photoresist, cleaning, drying are then removed in development;
(5) the exposure part of protective seam on the employing hydrofluorite corrosive liquid wet etching quartz base plate forms the V-type groove at last;
(6) remove described protective seam.
2. employing photoetching technique as claimed in claim 1 is made the method for fiber array V-shaped groove, it is characterized in that described protective seam is the chromium layer, removes described chromium layer with chromic acid in the step 6.
3. employing photoetching technique as claimed in claim 2 is made the method for fiber array V-shaped groove, it is characterized in that described chromium layer adopts the method for high temperature ion sputtering to be plated on described fused silica substrate surface.
4. employing photoetching technique as claimed in claim 2 is made the method for fiber array V-shaped groove, and the thickness that it is characterized in that described chromium layer is 2000 ± 200A °.
5. employing photoetching technique as claimed in claim 1 is made the method for fiber array V-shaped groove, it is characterized in that 90 °～100 ° of described V-type groove two sides angles.
6. employing photoetching technique as claimed in claim 1 is made the method for fiber array V-shaped groove, it is characterized in that described V-type groove depth is 50～60 microns.
7. employing photoetching technique as claimed in claim 1 is made the method for fiber array V-shaped groove, it is characterized in that the fused silica substrate after the described cleaning is meant the fused silica substrate of the surface having been carried out grinding and polishing.
8. employing photoetching technique as claimed in claim 1 is made the method for fiber array V-shaped groove, it is characterized in that forming live width on described chromium layer after exposure, the development is less than or equal to 2 microns window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910264705A CN101762971A (en) | 2009-12-25 | 2009-12-25 | Method for manufacturing fiber array V-shaped groove by photoetching technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910264705A CN101762971A (en) | 2009-12-25 | 2009-12-25 | Method for manufacturing fiber array V-shaped groove by photoetching technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101762971A true CN101762971A (en) | 2010-06-30 |
Family
ID=42494210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910264705A Pending CN101762971A (en) | 2009-12-25 | 2009-12-25 | Method for manufacturing fiber array V-shaped groove by photoetching technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101762971A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243437A (en) * | 2011-06-14 | 2011-11-16 | 扬中市华瑞通讯仪器有限公司 | Method for manufacturing groove substrate of optical fiber array assembly |
| CN102520482A (en) * | 2011-12-19 | 2012-06-27 | 深圳市易飞扬通信技术有限公司 | Critical method for manufacturing fiber array by semiconductor technology |
| CN103308980A (en) * | 2012-03-07 | 2013-09-18 | 上海坤腾光电科技有限公司 | C-type micro groove array substrate and processing method thereof |
| CN103592725A (en) * | 2013-10-29 | 2014-02-19 | 刘丹 | Manufacturing method of MPO optical fiber connector |
| CN104053626A (en) * | 2011-10-28 | 2014-09-17 | 意法半导体股份有限公司 | Method for manufacturing a protective layer against HF etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device |
| CN104698759A (en) * | 2013-12-04 | 2015-06-10 | 无锡宏纳科技有限公司 | Photoetching method of optical fiber array U grooves |
| CN105329847A (en) * | 2014-08-15 | 2016-02-17 | 中国科学院物理研究所 | Preparation method of micro-cavity structure array |
| CN108089263A (en) * | 2017-12-29 | 2018-05-29 | 山东明灿光电科技有限公司 | A kind of multi-mode-single mode hybrid optical splitter and preparation method thereof |
| CN109849080A (en) * | 2018-12-27 | 2019-06-07 | 苏州天步光电技术有限公司 | A kind of deep trouth and its processing method of plane multi-angle |
| US11460637B2 (en) | 2019-05-15 | 2022-10-04 | Corning Research & Development Corporation | Optical connection substrates for passive fiber to waveguide coupling |
| CN115980929A (en) * | 2023-03-20 | 2023-04-18 | 武汉驿路通科技股份有限公司 | High-precision optical fiber array and preparation method thereof |
| CN117761828A (en) * | 2023-12-22 | 2024-03-26 | 广东工业大学 | Processing method of silicon V-groove array for installing arc-shaped optical fiber |
-
2009
- 2009-12-25 CN CN200910264705A patent/CN101762971A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243437A (en) * | 2011-06-14 | 2011-11-16 | 扬中市华瑞通讯仪器有限公司 | Method for manufacturing groove substrate of optical fiber array assembly |
| CN104053626B (en) * | 2011-10-28 | 2017-06-30 | 意法半导体股份有限公司 | For manufacturing the method for the protective layer for hydrofluoric acid etch, being provided with the semiconductor devices of the protective layer and manufacturing the method for the semiconductor devices |
| CN104053626A (en) * | 2011-10-28 | 2014-09-17 | 意法半导体股份有限公司 | Method for manufacturing a protective layer against HF etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device |
| US9824882B2 (en) | 2011-10-28 | 2017-11-21 | Stmicroelectronics S.R.L. | Method for manufacturing a protective layer against HF etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device |
| US9758373B2 (en) | 2011-10-28 | 2017-09-12 | Stmicroelectronics S.R.L. | Method for manufacturing a protective layer against HF etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device |
| CN102520482A (en) * | 2011-12-19 | 2012-06-27 | 深圳市易飞扬通信技术有限公司 | Critical method for manufacturing fiber array by semiconductor technology |
| CN103308980A (en) * | 2012-03-07 | 2013-09-18 | 上海坤腾光电科技有限公司 | C-type micro groove array substrate and processing method thereof |
| CN103592725A (en) * | 2013-10-29 | 2014-02-19 | 刘丹 | Manufacturing method of MPO optical fiber connector |
| CN104698759A (en) * | 2013-12-04 | 2015-06-10 | 无锡宏纳科技有限公司 | Photoetching method of optical fiber array U grooves |
| CN105329847A (en) * | 2014-08-15 | 2016-02-17 | 中国科学院物理研究所 | Preparation method of micro-cavity structure array |
| CN108089263A (en) * | 2017-12-29 | 2018-05-29 | 山东明灿光电科技有限公司 | A kind of multi-mode-single mode hybrid optical splitter and preparation method thereof |
| CN109849080A (en) * | 2018-12-27 | 2019-06-07 | 苏州天步光电技术有限公司 | A kind of deep trouth and its processing method of plane multi-angle |
| US11460637B2 (en) | 2019-05-15 | 2022-10-04 | Corning Research & Development Corporation | Optical connection substrates for passive fiber to waveguide coupling |
| CN115980929A (en) * | 2023-03-20 | 2023-04-18 | 武汉驿路通科技股份有限公司 | High-precision optical fiber array and preparation method thereof |
| CN117761828A (en) * | 2023-12-22 | 2024-03-26 | 广东工业大学 | Processing method of silicon V-groove array for installing arc-shaped optical fiber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101762971A (en) | Method for manufacturing fiber array V-shaped groove by photoetching technology | |
| TW475241B (en) | Semiconductor wafer dividing method | |
| US20070116423A1 (en) | Arrays of optical elements and method of manufacturing same | |
| CN107543837B (en) | Method for detecting damaged layer of silicon wafer after grinding wheel fine grinding | |
| EP1952450A1 (en) | Arrays of light emitting articles and method of manufacturing same | |
| WO2020077849A1 (en) | High-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and manufacturing method therefor | |
| CN108177044B (en) | Edge chamfering method for monocrystalline silicon wafer for integrated circuit | |
| CN102983119B (en) | The upper recessed alignment marks for electron beam alignment of SOI and manufacture method | |
| CN109972204A (en) | Ultra-thin super optical flat and the method for preparing the ultra-thin super optical flat | |
| CN109387893B (en) | Method for manufacturing micro-reflector | |
| CN101290362B (en) | Silicon wet method corrosion for manufacturing multiple stage micro-reflector | |
| US20110062111A1 (en) | Method of fabricating microscale optical structures | |
| JP6805834B2 (en) | Imprint mold | |
| CN103698855A (en) | Self-aligning silicon-based optical fiber clamp and manufacturing method thereof | |
| CN103018848A (en) | Optical fiber array positioning assembly and manufacturing method thereof | |
| CN102636953A (en) | Mold-forming substrate and inspection method | |
| CN113651291B (en) | Preparation method of self-supporting micron-thickness silicon diaphragm | |
| CN102581968B (en) | A kind of cutting method of table top silicon rectification device | |
| CN105047536A (en) | Alignment mark for silicon carbide device and preparation method of alignment mark | |
| JP2007251098A (en) | Manufacturing method of semiconductor chip | |
| CN211858597U (en) | Processing device for integrated circuit wafer regeneration process | |
| JP2015214449A (en) | Production method of glass substrate and glass substrate | |
| TWI476942B (en) | Texturing method for mono-like silicon chip | |
| CN103698856B (en) | Silica-based optical fibers fixture and manufacture method | |
| KR101151001B1 (en) | Apparatus and method for processing notch of wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100630 |