CN117761828A - Processing method of silicon V-groove array for installing arc-shaped optical fiber - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 141
- 239000010703 silicon Substances 0.000 title claims abstract description 141
- 239000013307 optical fiber Substances 0.000 title claims abstract description 51
- 238000003672 processing method Methods 0.000 title abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 38
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 37
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000003491 array Methods 0.000 claims abstract description 21
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- 238000002791 soaking Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 238000001312 dry etching Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 14
- 238000005530 etching Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 9
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- 238000009434 installation Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention provides a processing method of a silicon V-groove array for installing arc-shaped optical fibers, which comprises the following steps: s1, providing a silicon wafer, and cleaning and drying the silicon wafer; s2, preparing silicon nitride mask patterns with different widths on the surface of the dried silicon wafer to form a target silicon wafer; s3, soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol, and performing alkaline wet etching to form a silicon wafer with V-groove arrays with different depths; s4, removing redundant impurities on the surface of the silicon wafer with the V-groove arrays with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays with different depths, from which the redundant impurities are removed. The invention designs mask patterns with different widths to control the opening size of the V-groove array, thereby processing V-groove channels with inconsistent depths and further realizing arc distribution of the optical fiber array in the Z-axis direction.
Description
Technical Field
The invention relates to the technical field of silicon-based photoelectrons, in particular to a processing method of a silicon V-groove array for installing arc-shaped optical fibers.
Background
The silicon-based photoelectric integrated chip is a silicon-based large-scale integrated chip taking photons and electrons as information carriers, namely, a novel hybrid large-scale integrated chip with complete integrated functions is formed by utilizing silicon or silicon compatible materials and applying CMOS technology to manufacture photons and photoelectric functional devices on the same silicon substrate. The method utilizes advanced and mature microelectronic technology and has the advantages of low price, high bandwidth, ultrahigh transmission rate, high anti-interference performance and the like of photonic devices and systems brought by large-scale integration. The silicon-based photoelectron technology combines the ultra-large scale and ultra-precise manufacturing characteristics of the integrated circuit technology and the ultra-high speed and ultra-low power consumption advantages of the photon technology, and is one of key technologies exceeding moore's law. The preparation and installation of the optical fiber array on the silicon substrate are one of the applications of silicon-based photoelectronic technology, and the optical fiber array is widely applied to multiport optical communication devices and is mainly used for transmitting information or directly transmitting images. In general, a plurality of optical fibers are arranged in a straight line at equal intervals to form an optical fiber array, and the optical fiber array realizes accurate positioning of the optical fibers through a high-precision optical fiber positioning substrate.
With the development of technology and technology alternation, in some multiport optical communication devices with free space optical structures, there are effects such as aberration, which require that the optical fiber array needs to be arranged in a specific or irregular manner, such as an arc-shaped distribution, instead of an equidistant linear distribution.
However, existing fiber optic installation manufacturing processes are: 1. through the digit control machine tool of high accuracy, directly carve out V groove array at the quartz substrate, but the optical fiber array that this kind of mechanical motion control made is general relatively poor in precision, and need to fix a position the alignment to equipment again when preparing the optical fiber array of different height, complex operation and manufacturing cost are high. 2. By the ion beam process, V-shaped grooves or U-shaped groove arrays are etched on the substrate, and the dry etching has slower processing speed and high production cost. 3. The V-shaped groove is prepared by anisotropic etching of the silicon-based material in KOH, and the disadvantage of the wet etching is that the angle of the prepared V-shaped groove is consistent with 54.7 degrees, but the operation is simple, the preparation speed is high, and the precision is high.
In view of the deficiencies of the prior art, there is a need to provide a method of processing a silicon V-groove array for installing arcuate optical fibers that addresses the above-described problems.
Disclosure of Invention
The invention aims at overcoming the technical defects in the prior art and provides a processing method for a silicon V-groove array for installing an arc-shaped optical fiber.
In order to achieve the purpose of the invention, the technical scheme adopted is as follows:
a method of processing a silicon V-groove array for installing an arcuate optical fiber, comprising:
s1, providing a silicon wafer, and cleaning and drying the silicon wafer;
s2, preparing silicon nitride mask patterns with different widths to form a target silicon wafer through low-pressure chemical vapor deposition, spin coating photoresist, development exposure and dry etching sequentially on the dried silicon wafer;
s3, soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol, and performing alkaline wet etching to form a silicon wafer with V-groove arrays with different depths;
s4, removing redundant impurities on the surface of the silicon wafer with the V-groove arrays with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays with different depths, from which the redundant impurities are removed.
Preferably, in the step S1, cleaning and drying the silicon wafer substrate specifically includes: and placing the silicon wafer into an ionic water ultrasonic bath for cleaning for 3 minutes, and then drying the silicon wafer by using a nitrogen flow for 1 to 3 minutes.
Preferably, the step S2 specifically includes the following steps:
s21, placing the dried silicon wafer in a reaction furnace, and introducing reaction source gas into the reaction furnace to perform deposition reaction so as to deposit a layer of silicon nitride film on the surface of the silicon wafer;
s22, uniformly spin-coating a layer of photoresist on the surface of the silicon nitride film far away from the silicon wafer, and drying the photoresist to enable the photoresist to be solidified on the surface of the silicon wafer deposited with the silicon nitride film;
s23, placing the silicon wafer with the photoresist cured under a photoetching machine for alignment exposure, dissolving the uncured photoresist by using a developing solution, removing part of the photoresist in an exposed area, and drying and cleaning the silicon wafer after removing part of the photoresist to enable the silicon wafer to have a photoresist mask pattern;
and S24, removing the silicon nitride film outside the photoresist mask pattern area of the silicon wafer by dry etching to form the target silicon wafer with silicon nitride mask patterns with different widths.
Preferably, the silicon wafer is a 100-surface N-type doped wafer, the geometric dimension of the silicon wafer is 70mmX70mm, the thickness of the silicon wafer is 1mm, and the resistivity of the silicon wafer is 5 omega cm-10 omega cm.
Preferably, the thickness of the silicon nitride film is 100nm.
Preferably, the potassium hydroxide content in the mixed solution is 23.4wt% and the isopropyl alcohol content is 13.3wt%.
Preferably, the reaction source gas is ammonia gas and dichlorosilane, and the pressure of the reaction furnace is not higher than 133Pa.
Preferably, the photoresist is an AZ series positive photoresist.
Preferably, the gas used for the dry etching is any one of carbon tetrafluoride, oxygen and nitrogen.
Preferably, the number of the V-grooves of the V-groove array is 15, and the distance between the adjacent V-grooves is 0.35mm.
Compared with the related art, the processing method of the silicon V-groove array for installing the arc-shaped optical fiber provided by the invention comprises the following steps of: providing a silicon wafer, and cleaning and drying the silicon wafer; preparing silicon nitride mask patterns with different widths on the surface of the dried silicon wafer to form a target silicon wafer; soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol to perform alkaline wet etching to form a silicon wafer with V-groove arrays with different depths; and removing redundant impurities on the surface of the silicon wafer with the V-groove arrays with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays with different depths from which the redundant impurities are removed. According to the processing method, the opening sizes of the V grooves in the V groove array are controlled by designing the silicon nitride mask patterns with different widths, so that V groove channels with inconsistent depths are processed, when the optical fibers are installed in the V groove array processed by the method, arc-shaped distribution of the optical fibers with different heights can be realized, the operation is simple and convenient, the processing difficulty and the production cost can be effectively reduced, the V groove array is processed by wet etching, the processing time is greatly reduced compared with dry etching, and the wet etching has the advantages of simplicity in operation and low cost. On the other hand, the V-groove array formed by wet etching accurately realizes the arc-shaped distribution and installation of the optical fibers along the Z axis, accurately completes the coupling of the optical fibers and the etching surface of the V-groove array, and provides more stable and reliable connection for subsequent optical devices.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a flow chart of a method of processing a silicon V-groove array for installing an arc-shaped optical fiber according to the present invention;
fig. 2 is a schematic flow chart of the embodiment S2 of the present invention.
FIG. 3 is a schematic structural flow diagram of a method of processing a silicon V-groove array for installing an arc-shaped optical fiber according to the present invention;
FIG. 4 is a schematic diagram of the geometry of the optical fiber of the present invention when installed in a V-groove;
FIG. 5 is a schematic illustration of different width silicon nitride mask patterns prepared in accordance with the present invention;
FIG. 6 is a schematic illustration of a V-groove array made in accordance with the present invention;
fig. 7 is an enlarged view of a portion of an optical fiber exhibiting an arcuate profile in the Z-axis.
Detailed Description
The detailed description/examples set forth herein are specific embodiments of the invention and are intended to illustrate the concepts of the invention, and are intended to be illustrative and exemplary, and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to adopt other obvious solutions based on the disclosure of the claims and specification of the present application, including those adopting any obvious substitutions and modifications to the embodiments described herein, all within the scope of the present invention.
Referring to fig. 1-7, the present invention provides a method for processing a silicon V-groove array for installing an arc-shaped optical fiber, comprising:
s1, providing a silicon wafer 301, and cleaning and drying the silicon wafer 301;
s2, preparing silicon nitride mask patterns with different widths to form a target silicon wafer through low-pressure chemical vapor deposition, spin coating photoresist, development exposure and dry etching sequentially on the dried silicon wafer;
s3, soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol, and performing alkaline wet etching to form the silicon wafer with the V-groove arrays 201 with different depths;
and S4, removing redundant impurities on the surface of the silicon wafer 301 with the V-groove arrays 201 with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays 201 with different depths, from which the redundant impurities are removed.
The V-groove array 201 prepared by the processing method controls the opening size of the V-groove in the V-groove array 201 by designing silicon nitride mask patterns with different widths, so that V-groove channels with inconsistent depths are processed, when the optical fiber 101 is installed in the V-groove array processed by the processing method, the arc distribution of the optical fiber 101 with different heights can be realized, the operation is simple and convenient, the processing difficulty and the production cost can be effectively reduced, and the V-groove array 201 is processed by wet etching, so that the processing time is greatly reduced compared with dry etching, and the wet etching has the advantages of simplicity in operation and low cost. On the other hand, the V-groove array 201 formed by wet etching accurately realizes the arc-shaped distribution and installation of the optical fibers along the Z axis, accurately completes the coupling of the optical fibers and the etching surface of the V-groove array 201, and provides more stable and reliable connection for subsequent optical devices.
In this embodiment, the step S1 of cleaning and drying the silicon wafer substrate specifically includes: and placing the silicon wafer into an ionic water ultrasonic bath for cleaning for 3 minutes, and then drying the silicon wafer by using a nitrogen flow for 1 to 3 minutes.
Specifically, the step S2 specifically includes the following steps:
s21, placing the dried silicon wafer 301 in a reaction furnace, and introducing a reaction source gas into the reaction furnace to perform a deposition reaction so as to deposit a layer of silicon nitride film on the surface of the silicon wafer 301;
s22, uniformly spin-coating a layer of photoresist on the surface of the silicon nitride film far away from the silicon wafer 301, and drying the photoresist to enable the photoresist to be solidified on the surface of the silicon wafer 301 deposited with the silicon nitride film;
s23, placing the silicon wafer 301 with the photoresist solidified under a photoetching machine for alignment exposure, dissolving the uncured photoresist by using a developing solution, removing part of the photoresist in an exposed area, and drying and cleaning the silicon wafer after removing part of the photoresist so as to enable the silicon wafer to have a photoresist mask pattern;
and S24, removing the silicon nitride film outside the photoresist mask pattern area of the silicon wafer by dry etching to form the target silicon wafer with silicon nitride mask patterns with different widths.
In the processing method, silicon nitride mask patterns with different widths are prepared on the surface of a silicon wafer by means of Low Pressure Chemical Vapor Deposition (LPCVD), photoetching, dry etching and the like. The V-groove array can be processed by utilizing the anisotropic etching of the silicon wafer in sodium hydroxide, and the included angle of the V-groove array is calculated to be 70.52 degrees. As shown in fig. 4, when the optical fiber is placed in the V-groove, the optical fiber is tangent to both side walls of the V-groove, and when the diameters of the optical fibers are identical and the angles of the V-groove included angles are identical, the distance d from the optical fiber to the groove bottom is also constant. Thus, the arc height distribution of the fiber center along the Z axis can be converted into an arc height distribution of the V groove bottom. Furthermore, the depth of the groove can be controlled by controlling the opening size of the V-groove, and the V-groove array distributed in an arc shape can be processed by only designing and calculating the right and proper width of the silicon nitride mask pattern.
In this embodiment, the thickness of the silicon nitride film is 100nm, the diameters of the optical fibers are uniform and are 125um, and the silicon nitride film is a low-stress silicon nitride film which is prepared on a silicon wafer by low-pressure chemical vapor deposition (LPCVD). The LPCVD equipment mainly comprises a quartz furnace reaction cavity, a cold trap, a vacuum system, a gas path control system, a three-temperature zone heating system, a circulating water cooling system, a control system and the like.
In this embodiment, the reaction source gases are ammonia (NH 3) and dichlorosilane (DCS (SiH 2Cl 2)), and the reaction source gases are deposited by the following reaction equations: 3SiH2Cl2 ++4NH3 +=Si3N4+6HCl+6H2 +. and finally, depositing a uniform low-stress silicon nitride film on the surface of the silicon wafer, wherein the pressure of the reaction furnace is not higher than 133Pa.
The silicon nitride film outside the photoresist mask pattern 401 area of the silicon wafer is removed by dry etching, the silicon wafer is placed on an RIE base, the gas in the reaction chamber is glow discharged under the action of a high-frequency electric field to generate plasma, and the plasma chemically reacts with the silicon nitride film on the surface of the silicon wafer to form volatile substances to be taken away. Meanwhile, the high-energy ions are shot to the surface of the sample for physical bombardment under the acceleration of an electric field. After the etching is finished, cleaning and drying are carried out, and the required silicon nitride mask pattern is prepared, as shown in fig. 5. In this embodiment, the gas used for the dry etching is any one of carbon tetrafluoride, oxygen and nitrogen.
Further, in the step S3, the target silicon wafer is soaked in a mixed solution of potassium hydroxide and isopropyl alcohol to perform alkaline wet etching to form a silicon wafer 301 with V-groove arrays 201 with different depths, which specifically includes: the target silicon wafer after the silicon nitride mask pattern is prepared is soaked in an etching tank of potassium hydroxide (KOH) and isopropyl alcohol solution (IPA), the temperature is controlled to be constant at 80 ℃, and the uniformity of etching in each place is ensured by continuously using ultrasonic stirring and etching liquid circulation. Because the target silicon wafer is etched in potassium hydroxide with anisotropy, the etching rate on the (100) surface is far higher than that on the (111) surface, a V-shaped groove with an included angle of 70.52 degrees is finally etched, and the target silicon wafer is fished out and cleaned after the etching time is up, and the etching time is 3-4 hours. In addition, the mass ratio of the etching solution in the mixed solution in the step S3 is KOH: IPA: h2o=23.4%: 13.3%:63.3%.
Further, in the step S4, the removing of the excessive impurities on the surface of the silicon wafer 301 with the V-groove array 201 with different depths is performed by removing the residual glue layer and the excessive etching solution on the surface of the silicon wafer 301 with an organic solvent and deionized water. And sequentially centrifugally washing and vacuum-drying the silicon wafer with the V-groove arrays 201 with different depths, from which the excessive impurities are removed. Finally, a V-groove channel array which is distributed in an arc shape in the Z-axis direction is obtained on the silicon wafer, so that the arc-shaped height distribution of the optical fiber is successfully realized, and the arc-shaped height distribution is shown in fig. 6. The rotational speed of the centrifugal washing is 500-800 r/min, the washing time is 5-10 min, the drying temperature of the vacuum drying is 60-80 ℃ and the drying time is 5-10 min.
In this embodiment, the silicon wafer is a 100-plane N-doped wafer, the geometric dimension of the silicon wafer is 70mmX70mm, the thickness of the silicon wafer is 1mm, and the resistivity of the silicon wafer is 5 Ω·cm-10 Ω·cm.
It should be noted that the silicon nitride mask patterns with different widths prepared in S2 are 922, 86, 73, 64, 56, 53, 51, 53, 56, 59, 64, 73, 86, 922 (all units are um) from left to right; the number of the V grooves of the V groove array is 15, the distance between the adjacent V grooves is 0.35mm, and based on the depth of the middle V groove, the arc distribution offset of the other grooves is 30, 20, 14, 10, 5, 3, 1, 0, 1, 3, 5, 10, 14, 20 and 30 (the units are um, and the upper part of the Z axis is positive and the lower part is negative) in sequence.
Compared with the related art, the processing method of the silicon V-groove array for installing the arc-shaped optical fiber provided by the invention comprises the following steps of: providing a silicon wafer, and cleaning and drying the silicon wafer; preparing silicon nitride mask patterns with different widths on the surface of the dried silicon wafer to form a target silicon wafer; soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol to perform alkaline wet etching to form a silicon wafer with V-groove arrays with different depths; and removing redundant impurities on the surface of the silicon wafer with the V-groove arrays with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays with different depths from which the redundant impurities are removed. According to the processing method, the opening sizes of the V grooves in the V groove array are controlled by designing the silicon nitride mask patterns with different widths, so that V groove channels with inconsistent depths are processed, when the optical fibers are installed in the V groove array processed by the method, arc-shaped distribution of the optical fibers with different heights can be realized, the operation is simple and convenient, the processing difficulty and the production cost can be effectively reduced, the V groove array is processed by wet etching, the processing time is greatly reduced compared with dry etching, and the wet etching has the advantages of simplicity in operation and low cost. On the other hand, the V-groove array formed by wet etching accurately realizes the arc-shaped distribution and installation of the optical fibers along the Z axis, accurately completes the coupling of the optical fibers and the etching surface of the V-groove array, and provides more stable and reliable connection for subsequent optical devices.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any such modifications, equivalents, and improvements that fall within the spirit and principles of the present invention are intended to be covered by the following claims.
Claims (10)
1. A method of processing a silicon V-groove array for installing an arcuate optical fiber, the method comprising:
s1, providing a silicon wafer, and cleaning and drying the silicon wafer;
s2, preparing silicon nitride mask patterns with different widths to form a target silicon wafer through low-pressure chemical vapor deposition, spin coating photoresist, development exposure and dry etching sequentially on the dried silicon wafer;
s3, soaking the target silicon wafer in a mixed solution of potassium hydroxide and isopropanol, and performing alkaline wet etching to form a silicon wafer with V-groove arrays with different depths;
s4, removing redundant impurities on the surface of the silicon wafer with the V-groove arrays with different depths, and sequentially carrying out centrifugal washing and vacuum drying on the silicon wafer with the V-groove arrays with different depths, from which the redundant impurities are removed.
2. The method for processing the silicon V-groove array for installing the arc-shaped optical fiber according to claim 1, wherein the step S1 of cleaning and drying the silicon wafer substrate comprises the following steps: and placing the silicon wafer into an ionic water ultrasonic bath for cleaning for 3 minutes, and then drying the silicon wafer by using a nitrogen flow for 1 to 3 minutes.
3. The method for fabricating a silicon V-groove array for installing an arc-shaped optical fiber according to claim 1, wherein said S2 comprises the steps of:
s21, placing the dried silicon wafer in a reaction furnace, and introducing reaction source gas into the reaction furnace to perform deposition reaction so as to deposit a layer of silicon nitride film on the surface of the silicon wafer;
s22, uniformly spin-coating a layer of photoresist on the surface of the silicon nitride film far away from the silicon wafer, and drying the photoresist to enable the photoresist to be solidified on the surface of the silicon wafer deposited with the silicon nitride film;
s23, placing the silicon wafer with the photoresist cured under a photoetching machine for alignment exposure, dissolving the uncured photoresist by using a developing solution, removing part of the photoresist in an exposed area, and drying and cleaning the silicon wafer after removing part of the photoresist to enable the silicon wafer to have a photoresist mask pattern;
and S24, removing the silicon nitride film outside the photoresist mask pattern area of the silicon wafer by dry etching to form the target silicon wafer with silicon nitride mask patterns with different widths.
4. The method of claim 1, wherein the silicon wafer is a 100-sided N-doped wafer, the silicon wafer has a geometry of 70mmX70mm, the silicon wafer has a thickness of 1mm, and the silicon wafer has a resistivity of 5 Ω -cm-10 Ω -cm.
5. A method of fabricating a silicon V-groove array for installing an arc-shaped optical fiber according to claim 3, wherein the thickness of the silicon nitride film is 100nm.
6. A method of processing a silicon V-groove array for installing an arc-shaped optical fiber according to claim 1, wherein the potassium hydroxide content in the mixed solution is 23.4wt% and the isopropyl alcohol content is 13.3wt%.
7. The method for processing a silicon V-groove array for installing an arc-shaped optical fiber according to claim 1, wherein the reaction source gas is ammonia gas and dichlorosilane, and the pressure of the reaction furnace is not higher than 133Pa.
8. A method of processing a silicon V-groove array for installing an arc-shaped optical fiber according to claim 3, wherein the photoresist is AZ series positive photoresist.
9. The method of claim 1, wherein the gas used for the dry etching is any one of carbon tetrafluoride, oxygen and nitrogen.
10. A method of processing a silicon V-groove array for installing an arc-shaped optical fiber according to claim 1, wherein the V-groove number of the V-groove array is 15 and the distance between adjacent V-grooves is 0.35mm.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547242A (en) * | 2003-12-11 | 2004-11-17 | 西安交通大学 | Two-stage step structured wet chemical corrosion method for silicon semiconductor device |
| CN101189735A (en) * | 2005-06-02 | 2008-05-28 | 皇家飞利浦电子股份有限公司 | Silicon deflector on a silicon submount for light emitting diodes |
| CN101762971A (en) * | 2009-12-25 | 2010-06-30 | 无锡爱沃富光电科技有限公司 | Method for manufacturing fiber array V-shaped groove by photoetching technology |
| CN102520482A (en) * | 2011-12-19 | 2012-06-27 | 深圳市易飞扬通信技术有限公司 | Critical method for manufacturing fiber array by semiconductor technology |
| CN102608702A (en) * | 2012-04-06 | 2012-07-25 | 缪建民 | Method for preparing V slots of silicon-based fiber array with low surface tension |
| CN102856166A (en) * | 2012-09-10 | 2013-01-02 | 中国科学院物理研究所 | Frequency doubling method for preparing periodical V-shaped nanometer silicon groove |
| CN103663357A (en) * | 2012-09-18 | 2014-03-26 | 无锡华润上华半导体有限公司 | Silicon etching method |
| CN104347362A (en) * | 2014-09-23 | 2015-02-11 | 上海华力微电子有限公司 | Manufacturing method of small-dimension pattern |
| CN116626987A (en) * | 2023-07-17 | 2023-08-22 | 上海鲲游科技有限公司 | Process modulation method based on Lag effect |
-
2023
- 2023-12-22 CN CN202311794732.8A patent/CN117761828A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547242A (en) * | 2003-12-11 | 2004-11-17 | 西安交通大学 | Two-stage step structured wet chemical corrosion method for silicon semiconductor device |
| CN101189735A (en) * | 2005-06-02 | 2008-05-28 | 皇家飞利浦电子股份有限公司 | Silicon deflector on a silicon submount for light emitting diodes |
| CN101762971A (en) * | 2009-12-25 | 2010-06-30 | 无锡爱沃富光电科技有限公司 | Method for manufacturing fiber array V-shaped groove by photoetching technology |
| CN102520482A (en) * | 2011-12-19 | 2012-06-27 | 深圳市易飞扬通信技术有限公司 | Critical method for manufacturing fiber array by semiconductor technology |
| CN102608702A (en) * | 2012-04-06 | 2012-07-25 | 缪建民 | Method for preparing V slots of silicon-based fiber array with low surface tension |
| CN102856166A (en) * | 2012-09-10 | 2013-01-02 | 中国科学院物理研究所 | Frequency doubling method for preparing periodical V-shaped nanometer silicon groove |
| CN103663357A (en) * | 2012-09-18 | 2014-03-26 | 无锡华润上华半导体有限公司 | Silicon etching method |
| CN104347362A (en) * | 2014-09-23 | 2015-02-11 | 上海华力微电子有限公司 | Manufacturing method of small-dimension pattern |
| CN116626987A (en) * | 2023-07-17 | 2023-08-22 | 上海鲲游科技有限公司 | Process modulation method based on Lag effect |
Non-Patent Citations (1)
| Title |
|---|
| 梁静秋 等: "采用硅V 型槽的一维光纤阵列的研制", 光学精密工程, vol. 15, no. 1, 31 January 2007 (2007-01-31), pages 90 - 94 * |
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