CN115291481A - Semiconductor process - Google Patents
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- CN115291481A CN115291481A CN202211224967.9A CN202211224967A CN115291481A CN 115291481 A CN115291481 A CN 115291481A CN 202211224967 A CN202211224967 A CN 202211224967A CN 115291481 A CN115291481 A CN 115291481A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 238000003672 processing method Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- -1 sensitizer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a semiconductor process method, which comprises the following steps: providing a substrate, and forming a negative photoresist layer on the substrate; exposing the negative photoresist layer; and post-baking the exposed negative photoresist layer in an alkaline atmosphere, and neutralizing part of photoacid at the top of the negative photoresist layer by using an alkaline medium in the alkaline atmosphere in the post-baking process so as to balance the photoacid at the top and the bottom of the negative photoresist layer. The improved process flow can neutralize the excessive photoacid generated on the top of the photoresist after exposure, thereby achieving the balance of the photoacid appearance on the top and the bottom of the photoresist layer, leading the sizes of the top and the bottom of the photoresist layer to tend to be consistent, reducing or even eliminating the T-top (T-shaped graph) phenomenon of the photoresist appearance after development and improving the precision of the photoresist graph.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor process method.
Background
The photolithography process is an important process in the process of manufacturing a semiconductor device, and generally includes processes of spin-coating a photoresist, soft baking, alignment exposure, post baking, developing, etching, detecting, and the like. Photoresists used in lithographic processes are generally classified into positive resists (positive photoresists) and negative resists (negative photoresists). Negative photoresist is a mixed liquid which is sensitive to light and consists of three main components of photosensitive resin, sensitizer and solvent, wherein the sensitizer is a photosensitizer which releases nitrogen after exposure, and generated free radicals form cross-linking among rubber molecules, so that an exposed area becomes insoluble in a developing solution. In contrast, positive tone photoresists, the exposed regions are more readily soluble in development. Negative photoresist is widely used due to the advantages of good adhesion capability, good blocking effect, high photosensitive speed, relatively low cost and the like. Negative tone photoresists are those that produce photoacid upon exposure to light, a De-protection reaction upon post exposure bake, and exposed areas that remain after development. The light intensity is weaker at the bottom of the photoresist than at the top, subject to factors such as the focal plane of the exposure and the thickness of the photoresist. The top of the photoresist generates more photoacid than the bottom, and the photoresist topography after baking development has a T-top (T-pattern) phenomenon, as shown in fig. 1, in which the top dimension is larger than the bottom dimension, resulting in a decrease in the lithographic pattern accuracy.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. These solutions are not considered to be known to the person skilled in the art merely because they are set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a method for manufacturing a semiconductor device, which is used to solve the problem of the conventional photolithography process that the T-top phenomenon is easily generated by using a negative photoresist, which results in the decrease of the accuracy of the photolithography pattern.
To achieve the above and other related objects, the present invention provides a semiconductor processing method, comprising:
providing a substrate, and forming a negative photoresist layer on the substrate;
exposing the negative photoresist layer;
and post-baking the exposed negative photoresist layer in an alkaline atmosphere, and neutralizing part of photoacid at the top of the negative photoresist layer by using an alkaline medium in the alkaline atmosphere in the post-baking process so as to balance the photoacid at the top and the bottom of the negative photoresist layer.
Optionally, the alkaline atmosphere is formed by introducing a weak alkaline gas into the baking oven during the post-baking process.
Optionally, the weakly basic gas comprises ammonia.
More optionally, the ammonia gas has a concentration of 10ppm and a flow rate of 2L/min.
Optionally, the weak alkaline gas is continuously introduced during the post-baking process.
Optionally, a weakly alkaline gas is introduced into the oven chamber along with an inert gas.
More optionally, the inert gas comprises argon.
Optionally, the post-drying temperature is 110-130 ℃, and the post-drying time is 30s-2min.
Optionally, the concentration of the weakly basic gas introduced into the center region and the edge region of the negative photoresist layer is different.
More optionally, the weak alkaline gas with different concentrations is introduced into the central area and the edge area of the negative photoresist layer through a gas distribution plate with pore distribution difference.
As described above, the semiconductor process method of the present invention has the following beneficial effects: the improved process flow can neutralize the excessive photoacid generated on the top of the photoresist after exposure, thereby achieving the balance of the photoacid appearance on the top and the bottom of the photoresist layer, leading the sizes of the top and the bottom of the photoresist layer to tend to be consistent, reducing or even eliminating the T-top (T-shaped graph) phenomenon of the photoresist appearance after development and improving the precision of the photoresist graph.
Drawings
FIG. 1 is a diagram illustrating a T-top phenomenon in a prior art using a negative photoresist.
FIG. 2 is a flow chart of a semiconductor process according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated. In order to keep the drawings as concise as possible, not all features of a single figure may be labeled in their entirety.
As shown in fig. 2, the present invention provides a semiconductor processing method generally comprising the following steps.
First, step S1 is performed: providing a substrate, and forming a negative photoresist layer on the substrate.
The substrate of this embodiment may be a semiconductor substrate such as silicon, germanium, silicon on insulator, or silicon carbide, or a non-semiconductor substrate such as glass, and may be a bare wafer having no pattern formed on the surface thereof, or a substrate having a structure such as a dielectric layer and/or a metal layer formed on the surface thereof, and is applicable to the present invention as long as it is a device manufacturing process that requires photolithography using a negative photoresist to form a pattern on the surface thereof.
After the substrate is provided, it is typically pre-treated, including cleaned. For example, when the substrate is a bare silicon wafer, a solution of diluted hydrofluoric acid or the like is used to remove natural oxides, impurity particles, and the like on the surface of the substrate, and then deionized water is used to clean the substrate, and then a drying process such as air drying and/or baking is performed in an inert gas atmosphere, for example, the substrate is placed on a hot plate at 150-250C and baked for 1-2 minutes under the protection of nitrogen to ensure that the surface of the substrate is dried, and at the same time, the surface of the substrate is changed from hydrophilic to hydrophobic to improve the adhesion to the photoresist. In order to further improve the adhesive capacity of the photoresist on the surface of the substrate, a layer of thinner adhesive material can be coated on the surface of the substrate at the temperature of 200-250 ℃ after the substrate is cleaned so as to enhance the adhesion between the photoresist and the substrate. The adhesive material may be, for example, hexamethyldisilazane (HMDS), trimethylsilyl-diethylamine (TMSDEA), or the like, and a bottom anti-reflection layer may be further coated after the adhesive layer is coated. After these preparatory tasks are completed, a negative photoresist layer may be formed on the substrate surface by a process including, but not limited to, spin coating, and the photoresist layer may be formed on the same device as the adhesion layer and bottom antireflective layer. For example, a substrate is placed on a vacuum chuck, a photoresist solution is sprayed on the surface of the substrate by using a nozzle, the substrate rotates with the vacuum chuck at a preset rotating speed, for example, the substrate rotates at a low speed of about 500r/min and then at a high speed of about 3000r/min, and the coated photoresist is dispersed under the action of centrifugal force, so that a negative photoresist layer with uniform thickness is formed on the surface of the substrate. After coating is completed, the substrate edge may be cleaned with an organic solvent, for example, PGMEA, or developed by edge exposure to remove excess photoresist at the substrate edge, and then a pre-bake (also referred to as a soft bake) may be performed to remove some of the solvent in the photoresist to reduce film stress, thereby improving the adhesion of the photoresist to the substrate.
After the above work is completed, step S2 is executed: exposing the negative photoresist layer, and then executing the step S3: and post-baking the exposed negative photoresist layer in an alkaline atmosphere, and neutralizing partial photoacid at the top of the negative photoresist layer by using an alkaline medium in the alkaline atmosphere in the process of completing the post-baking so as to balance or tend to balance the photoacid at the top and the bottom of the negative photoresist layer, namely, the photoacid contained in the top and the bottom of the negative photoresist layer is basically the same. After the post-baking is finished, developing can be carried out, so that the photoresist in the non-exposure area is dissolved in a developing solution, the photoresist in the exposed area is remained, a required pattern is formed in the photoresist layer, and then the pattern is transferred to the substrate through etching.
Since the negative photoresist is composed of photosensitive resin, sensitizer, solvent, and the like, a photoacid is generated at a place where the negative photoresist contacts light after exposure, a deprotection reaction (De-protection) is generated by baking after exposure, and an exposed region is left after development. Due to the influence of factors such as the exposed focal plane and the thickness of the photoresist, for example, light is scattered or absorbed by the photoresist, the light intensity is weaker at the bottom of the photoresist than at the top, so that the top of the photoresist generates more photoacid than at the bottom, and after baking and developing, the photoresist appearance has a T-top (T-shaped pattern) phenomenon that the top dimension is larger than the bottom dimension as shown in fig. 1, resulting in the decrease of the precision of the photoresist pattern. Therefore, the Post-baking (Post Exposure baker, abbreviated as PEB) process in this step is performed in an alkaline atmosphere, for example, in the baking cavity after Exposure, an alkaline, especially weakly alkaline gas is introduced to the surface of the photoresist to make the oven in an alkaline atmosphere. The photoresist layer absorbs alkaline media such as alkaline gas in an alkaline atmosphere and the like, and can neutralize excessive photoacid generated by the top of the photoresist after exposure, so that the balance of the photoacid appearance at the top and the bottom of the photoresist layer is achieved, namely, the photoacid contained in the top and the bottom of the photoresist layer is basically the same, thus the sizes of the top and the bottom of the photoresist layer tend to be consistent, the T-top (T-shaped pattern) phenomenon of the photoresist appearance after development is reduced or even eliminated, and the precision of the photoresist pattern is improved.
In some examples, the weakly basic gas is, for example, ammonia. Too large or too small a concentration and flow of ammonia gas may cause defects, for example, too large a concentration may damage the substrate, while too small a concentration may hardly perform a good neutralization of the photoacid. The inventors have found through extensive experiments that the concentration is preferably 10ppm and the flow rate is preferably 2L/min. The introduction time of the ammonia gas is preferably the same as the baking time of the post-baking, that is, the introduction of the ammonia gas is continued throughout the post-baking process, so that the inside of the oven is always in an alkaline atmosphere during the post-baking process. As the flow and the concentration of the ammonia gas are not large, the influence on the temperature of the oven is limited, the post-baking temperature is kept between 110 ℃ and 130 ℃, such as 110 ℃,120 ℃,130 ℃ or any value in the interval, and the post-baking time is kept between 30s and 2min, such as 30s,1min,2min or any value in the interval. In the case that the alkaline medium is introduced with alkaline gas, a vent hole may be provided on the upper cover of the oven to introduce the alkaline gas into the oven. After the post-baking is completed, the introduction of the alkaline gas may be stopped, and then a cleaning gas such as nitrogen gas is introduced into the oven to exhaust the residual alkaline gas in the oven.
In some examples, considering the non-uniform device distribution density in the central region and the edge region of the substrate, the Critical Dimension (CD) difference between the central region and the edge region of the substrate is relatively large, and thus the gas flow/concentration in different regions can be adjusted accordingly, so that the flow/concentration of the weak alkaline gas introduced into the central region and the edge region of the photoresist layer/substrate are different to meet the requirement of neutralizing photoacid in different regions. In this case, a gas distribution plate may be disposed on the top of the oven, and weakly alkaline gas with different flow rates/concentrations may be introduced into the central region and the edge region of the photoresist layer through the gas distribution plate with different pore distribution. For example, the pores in the gas distribution plate may be more densely distributed in the edge region of the gas distribution plate than in the central region, or the pore size may be larger, so that more alkaline gas is supplied to the edge region of the substrate. And the gas distribution plate can introduce inert gas corresponding to the middle parts of the edge area and the central area of the substrate, and similar gas curtains are formed by the inert gas so as to separate the gases with different concentrations supplied to different areas. Aiming at the characteristics of different photoresists, the T-top phenomenon of the photoresist can be adjusted by changing the concentration of the ammonia gas.
In some examples, a weakly alkaline gas is introduced into the oven chamber along with an inert gas. The inert gas not only can play a role in heat conduction, so that the temperature distribution is more uniform, but also can protect the substrate from being oxidized and/or polluted. The inert gas may be, for example, nitrogen, but a more preferred example is argon. The molecular weight of the argon gas is larger than that of the ammonia gas, during the post-baking process, the argon gas with relatively smaller flow but relatively larger molecular weight can be positioned at the middle lower part of the oven to protect the substrate, and the ammonia gas is positioned at the upper part of the oven and is absorbed by the top of the photoresist layer to neutralize part of photoacid in the photoresist layer.
In other examples, the hydroxyl ions (OH) generated by ionization may also be used - ) Introduced into the oven, the oven may likewise be subjected to an alkaline atmosphere and neutralize portions of the photoacid on top of the photoresist layer. Specifically, the ionization can be performed outside the oven, and ionized ions can be introduced into the oven from the top of the oven through a shower head (shower head), and an inert gas can be introduced into the oven while the ions are introduced, so as to protect the substrate.
After the post-baking is completed, the processes of developing, hard-baking, etching, detecting and the like can be sequentially performed to finally transfer the pattern in the photoresist layer to the substrate. In the detection process, in order to verify the effect, the photoresist T-top phenomenon can be judged by slicing, and the photoetching condition can be known by measuring the overall critical dimension (Full map CD,100 points are evenly distributed) of the substrate. The invention can obviously improve the precision of the photoetching pattern through a great deal of experimental verification.
In summary, the present invention provides a semiconductor process method, which includes the steps of: providing a substrate, and forming a negative photoresist layer on the substrate; exposing the negative photoresist layer; and post-baking the exposed negative photoresist layer in an alkaline atmosphere, and neutralizing part of photoacid at the top of the negative photoresist layer by using an alkaline medium in the alkaline atmosphere in the post-baking process so as to balance the photoacid at the top and the bottom of the negative photoresist layer. The improved process flow can neutralize the excessive photoacid generated on the top of the photoresist after exposure, thereby achieving the balance of the photoacid appearance on the top and the bottom of the photoresist layer, leading the sizes of the top and the bottom of the photoresist layer to tend to be consistent, reducing or even eliminating the T-top (T-shaped graph) phenomenon of the photoresist appearance after development and improving the precision of the photoresist graph. The method for preparing the semiconductor device is beneficial to improving the production yield. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A semiconductor processing method, characterized in that the semiconductor processing method comprises the steps of:
providing a substrate, and forming a negative photoresist layer on the substrate;
exposing the negative photoresist layer;
and post-baking the exposed negative photoresist layer in an alkaline atmosphere, and neutralizing part of photoacid at the top of the negative photoresist layer by using an alkaline medium in the alkaline atmosphere in the post-baking process so as to balance the photoacid at the top and the bottom of the negative photoresist layer.
2. The semiconductor processing method according to claim 1, wherein said alkaline atmosphere is formed by introducing a weakly alkaline gas into a baking oven during a post-baking process.
3. The semiconductor processing method according to claim 2, wherein the weakly basic gas comprises ammonia gas.
4. The semiconductor processing method according to claim 3, wherein the concentration of ammonia gas is 10ppm and the flow rate is 2L/min.
5. The semiconductor processing method according to claim 2, wherein the weak alkaline gas is continuously introduced during the post-baking process.
6. A semiconductor processing method according to claim 2, characterized in that the inert gas is introduced into the baking chamber simultaneously with the introduction of the weakly alkaline gas.
7. The semiconductor processing method of claim 6, wherein the inert gas comprises argon.
8. The semiconductor process method according to claim 1, wherein the post-baking temperature is 110 to 130 ℃ and the post-baking time is 30s to 2min.
9. The semiconductor process according to any one of claims 2 to 8, wherein the concentration of the weakly basic gas introduced into the center region and the edge region of the negative photoresist layer is different.
10. The semiconductor processing method according to claim 9, wherein the weakly basic gas is introduced into the central region and the edge region of the negative photoresist layer at different concentrations through a gas distribution plate having a difference in pore distribution.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211224967.9A CN115291481A (en) | 2022-10-09 | 2022-10-09 | Semiconductor process |
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| CN202211224967.9A CN115291481A (en) | 2022-10-09 | 2022-10-09 | Semiconductor process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096015A (en) * | 2023-08-30 | 2023-11-21 | 荣芯半导体(淮安)有限公司 | Method for manufacturing integrated circuit |
| CN117219495A (en) * | 2023-11-07 | 2023-12-12 | 北京晨晶电子有限公司 | Method for solving optical proximity effect |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11153867A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Resist pattern forming method |
| CN2496100Y (en) * | 2001-08-31 | 2002-06-19 | 铼宝科技股份有限公司 | Surface treatment apparatus for display panel |
| CN114026497A (en) * | 2019-06-28 | 2022-02-08 | 朗姆研究公司 | Bake strategies to enhance lithographic performance of metal-containing resists |
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2022
- 2022-10-09 CN CN202211224967.9A patent/CN115291481A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11153867A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Resist pattern forming method |
| CN2496100Y (en) * | 2001-08-31 | 2002-06-19 | 铼宝科技股份有限公司 | Surface treatment apparatus for display panel |
| CN114026497A (en) * | 2019-06-28 | 2022-02-08 | 朗姆研究公司 | Bake strategies to enhance lithographic performance of metal-containing resists |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096015A (en) * | 2023-08-30 | 2023-11-21 | 荣芯半导体(淮安)有限公司 | Method for manufacturing integrated circuit |
| CN117219495A (en) * | 2023-11-07 | 2023-12-12 | 北京晨晶电子有限公司 | Method for solving optical proximity effect |
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