CN102077350A - 具有减小的暗电流的背侧照明式图像传感器 - Google Patents

具有减小的暗电流的背侧照明式图像传感器 Download PDF

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Publication number
CN102077350A
CN102077350A CN2009801249042A CN200980124904A CN102077350A CN 102077350 A CN102077350 A CN 102077350A CN 2009801249042 A CN2009801249042 A CN 2009801249042A CN 200980124904 A CN200980124904 A CN 200980124904A CN 102077350 A CN102077350 A CN 102077350A
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China
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layer
image sensor
seed layer
pixel array
oxide layer
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Pending
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CN2009801249042A
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English (en)
Chinese (zh)
Inventor
弗雷德里克·T·布雷迪
约翰·P·麦卡滕
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Omnivision Technologies Inc
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Eastman Kodak Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2009801249042A 2008-07-09 2009-06-25 具有减小的暗电流的背侧照明式图像传感器 Pending CN102077350A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,723 2008-07-09
US12/169,723 US7915067B2 (en) 2008-07-09 2008-07-09 Backside illuminated image sensor with reduced dark current
PCT/US2009/003794 WO2010005490A1 (en) 2008-07-09 2009-06-25 Backside illuminated image sensor with reduced dark current

Publications (1)

Publication Number Publication Date
CN102077350A true CN102077350A (zh) 2011-05-25

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CN2009801249042A Pending CN102077350A (zh) 2008-07-09 2009-06-25 具有减小的暗电流的背侧照明式图像传感器

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Country Link
US (2) US7915067B2 (https=)
EP (1) EP2304796A1 (https=)
JP (1) JP2011527827A (https=)
KR (1) KR20110038133A (https=)
CN (1) CN102077350A (https=)
TW (1) TW201010070A (https=)
WO (1) WO2010005490A1 (https=)

Cited By (1)

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EP2304796A1 (en) 2011-04-06
TW201010070A (en) 2010-03-01
WO2010005490A1 (en) 2010-01-14
US7915067B2 (en) 2011-03-29
US20110115957A1 (en) 2011-05-19
US20100006970A1 (en) 2010-01-14
KR20110038133A (ko) 2011-04-13
JP2011527827A (ja) 2011-11-04

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