CN102073334A - High-order temperature compensation complementary superposition-based high-precision band-gap reference circuit - Google Patents
High-order temperature compensation complementary superposition-based high-precision band-gap reference circuit Download PDFInfo
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Abstract
The invention discloses a high-order temperature compensation complementary superposition-based high-precision band-gap reference circuit. The circuit comprises an M-type temperature characteristic curve sub-circuit, a W-type temperature characteristic curve sub-circuit and a superposition mode selection sub-circuit, wherein the M-type temperature characteristic curve sub-circuit and the W-type temperature characteristic curve sub-circuit are arranged complementarily and symmetrically; both the M-type temperature characteristic curve sub-circuit and the W-type temperature characteristic curve sub-circuit comprise a feedback control circuit, a current generating circuit and an output circuit, wherein the current generating circuit is connected with the input end of the superposition mode selecting sub-circuit after being connected with an output circuit in series; and the output end of the output circuit is connected with the input end of the current generating circuit after being connected with the feedback control circuit in series. The circuit reduces a temperature coefficient of an output reference voltage to the maximum by using a nonlinear temperature compensation structure and a nonlinear temperature compensation method, thereby meeting the application of a high-precision system.
Description
Technical field
The present invention relates to a kind of compound high-order temperature compensation bandgap reference circuit, belong to the Analogical Circuit Technique field, be specifically related to the stack of two rank non-linear temperature compensation benchmark generations, temperature characteristics adjustment, reference voltage or select control.
Background technology
Reference voltage is close with source of stable pressure but different, and both common ground are the voltage that can both provide stable.Reference voltage does not have the load driving ability usually, can only drive capacitive load, but high to the stability requirement of voltage, mainly contains temperature stability and power supply stability.Source of stable pressure has very strong load driving ability as a kind of stable voltage source as its name suggests, therefore pays close attention to voltage more with the output stability under power source change and the power supply noise influence.In fact, also have some many-valued output references that certain load driving ability is arranged, and feedback regulation structure common in the power-supply system has been adopted in the acquisition of this load driving ability just.Therefore, benchmark can be regarded a kind of special source of stable pressure as, and source of stable pressure then is that a class of benchmark is mainly used.Voltage reference circuit should be able to provide not with the adjustable reference voltage of the high precision high stability of environment temperature, mains voltage variations for system.
Reference voltage has multiple structure type, wherein the band-gap reference great advantage is compatible mutually with deep-submicron and nanometer CMOS technology, the subject matter that exists is that voltage-mode band-gap reference output voltage is fixed and non-adjustable, though it is adjustable that the current-mode bandgap voltage reference is exported, but Power Supply Rejection Ratio obviously descends, and the susceptibility of the technology of benchmark output obviously increases.Therefore, for high precision reference, temperature stability and supply voltage stability are two most crucial requirements, and wherein the temperature stability of benchmark is that the variation of temperature coefficient and technology has than confidential relation, and temperature coefficient is more little, is subjected to the influence of process drift also big more.Therefore, suppress the variation of band gap reference temperature coefficient under the different process angle, when reducing the reference temperature temperature, improve its job stability, significant to the application of high precision reference.
In-40 ℃～125 ℃ temperature ranges, the temperature coefficient of existing classical linear compensation band gap voltage base can be reduced in 10ppm/ ℃ in theory, on this basis based on all kinds of high-order compensation benchmark architectures of piecewise nonlinear compensation principle, its temperature coefficient can be reduced to 3～5ppm/ ℃, if continuation reduction temperature coefficient not only difficulty obviously increases, and along with its technology susceptibility of reduction of temperature coefficient improves, process drift increases the influence of circuit performance, has increased the difficulty that benchmark is repaiied accent.When the performance degradation after the maximum process drift of reference temperature coefficient when poorer than corresponding first-order linear standard of compensation temperature characterisitic, the practical value of benchmark high-order compensation structure is difficult to embody.For satisfying the requirement of Circuits System to the reference voltage high-precision and high-stability, need to adopt new high-order compensation method, this method not only can be brought the further reduction of temperature coefficient, can also effectively suppress fluctuation and the variation that process drift is brought high precision reference simultaneously.
Summary of the invention
The present invention at first does further expansion and perfect to traditional high-order compensation reference circuit structure, and purpose is to realize free adjustment and control that temperature characteristics is distributed and changes, and the basic skills of employing is to utilize feedback loop control DV
BECurrent mismatch amount in the biasing circuit, and then be converted into the non-linear voltage misalignment rate and be used for the high-order compensation control of voltage-mode band-gap reference, on the first compensation phase curve basis that Open Side Down, near normal temperature, introduce a peak valley, form " M " type temperature characteristics; Benchmark architecture also can utilize a single tube collocation structure to finish high-order compensation except that utilizing mismatch compensation, and this pipe can be modulated DV
BEElectric current in biasing circuit definition resistance changes the temperature characterisitic of branch current, and the control by the compensating pipe grid voltage makes it open in high temperature section, realizes the segmented compensation under the high temperature.At this moment, if mismatch compensation and single tube segmented compensation can cooperatively interact, can be on the basis of single order Open Side Down temperature characteristics acquisition " W " temperature compensation characteristic curve.
The present invention is based on the high precision band-gap reference circuit of high-order temperature compensated complementary stack, comprise " M " type and " W " type temperature characteristics electronic circuit and overlay model chooser circuit, " M " type is symmetrical arranged with the complementation of " W " type temperature characteristics electronic circuit, " M " type all comprises feedback control circuit with " W " type temperature characteristics electronic circuit, current generating circuit and output circuit, wherein connect the input end of overlay model chooser circuit behind the current generating circuit serial connection output circuit, connect the input end of current generating circuit behind the output terminal serial connection feedback control circuit of output circuit.
Described overlay model chooser circuit is made up of two NMOS pipe NA0, NA1 and two resistance R A0, RA1, and the drain electrode of NMOS pipe NA0 meets benchmark output V by resistance R A0
Ref, the drain electrode of NMOS pipe NA1 meets benchmark output V by resistance R A1
Ref, the drain electrode of NMOS pipe NA0, NA1 connects the output terminal of two output circuits respectively.
The current generating circuit of " M " type temperature characteristics electronic circuit: comprise 4 PMOS pipe PM1 ~ PM4, two NMOS pipes NM0, NM1, two triode QM0, QM1 and resistance R M0; PMOS manages PM1, the source electrode of PM3 interconnects, the grid of PMOS pipe PM1 is managed the grid of PM3 respectively with PMOS, the drain electrode of the drain electrode of PMOS pipe PM2 and NMOS pipe NM1, the source electrode of the drain electrode of PMOS pipe PM1 and PMOS pipe PM0 interconnects, the source electrode of the drain electrode of PMOS pipe PM3 and PMOS pipe PM2 interconnects, the grid of NM0 is managed in the drain electrode of PMOS pipe PM0 respectively with NMOS, the output terminal of feedback control circuit connects, NMOS pipe NM0 source electrode series resistor RM0 after connect the source electrode of triode QM0, the source electrode of NMOS pipe NM1 connects the source electrode of triode QM1, and the base stage of triode QM0 is connected ground connection with the base stage of triode QM0 and the emitter of emitter and triode QM0 respectively.
The current generating circuit of " W " type temperature characteristics electronic circuit: comprise 4 PMOS pipe PM1 ~ PM4, three NMOS pipes NM0, NM1, compensating pipe NM4, two triode QM0, QM1 and resistance R M0, RM3; PMOS manages PM1, the source electrode of PM3 interconnects, the grid of PMOS pipe PM1 is managed the grid of PM3 respectively with PMOS, the drain electrode of the drain electrode of PMOS pipe PM2 and NMOS pipe NM1, the source electrode of the drain electrode of PMOS pipe PM1 and PMOS pipe PM0 interconnects, the source electrode of the drain electrode of PMOS pipe PM3 and PMOS pipe PM2 interconnects, the grid of NM0 is managed in the drain electrode of PMOS pipe PM0 respectively with NMOS, the output terminal of feedback control circuit connects, NMOS pipe NM0 source electrode series resistor RM3 successively, connect the source electrode of triode QM0 behind the RM0, the grid of compensating pipe NM4 connects the input end of overlay model chooser circuit, the drain electrode of compensating pipe NM4 and source electrode be the two ends of connecting resistance RM3 respectively, the source electrode of NMOS pipe NM1 connects the source electrode of triode QM1, and the base stage of triode QM0 is connected ground connection with the base stage of triode QM0 and the emitter of emitter and triode QM0 respectively.
The circuit that the present invention proposes has ultralow temperature coefficient, high Power Supply Rejection Ratio and certain technology stability.Simulation result based on SMIC 0.13mm CMOS technology shows, in-40 ℃ ~ 125 ℃ temperature ranges, the minimum of reference voltage temperature coefficient can drop to 0.17ppm/ ℃ under the typical process condition, and average Power Supply Rejection Ratio can reach more than the 80dB in low-frequency range.
Description of drawings
Fig. 1 overlay model high-order temperature compensation bandgap reference circuit system forms structure.
Fig. 2 has the stack compensation principle synoptic diagram of complementary temperature characterisitic benchmark.
The stack preference pattern high-order compensation band gap reference circuit figure that Fig. 3 the present invention proposes.
The simulation result of the ultralow temperature coefficient of Fig. 4 reference circuit of the present invention.
The simulation result of Fig. 5 reference circuit output voltage of the present invention PSRR characteristic.
Embodiment
As shown in Figure 1, the present invention is based on the high precision band-gap reference circuit of high-order temperature compensated complementary stack, comprise " M " type and " W " type temperature characteristics electronic circuit and overlay model chooser circuit, " M " type is symmetrical arranged with the complementation of " W " type temperature characteristics electronic circuit, " M " type all comprises feedback control circuit with " W " type temperature characteristics electronic circuit, current generating circuit and output circuit, wherein connect the input end of overlay model chooser circuit behind the current generating circuit serial connection output circuit, connect the input end of current generating circuit behind the output terminal serial connection feedback control circuit of output circuit.
As shown in Figure 3, circuit of the present invention comprises two electronic circuit and stack preference pattern electronic circuits that produce complementary temperature characteristics.Wherein " M " type temperature characterisitic electronic circuit can be subdivided into current generating circuit, feedback control circuit and three parts of output circuit, current generating circuit by four PMOS manage, two NMOS pipe, a resistance and two PNP triodes constitute, feedback control circuit by two PMOS manage, two NMOS pipe and two PNP triodes constitute, output circuit by two PMOS manage, two resistance and a PNP triode constitute; " W " type temperature characteristics electronic circuit is except that increasing a high temperature section regulating circuit that is made of the NMOS pipe and resistance, remainder is identical with " M " type temperature characteristics electronic circuit, but there are differences aspect being provided with at circuit parameter, purpose is that the high temperature section compensation by single tube combines with basic mismatch control compensation, obtain different reference temperature characteristics, and this temperature characterisitic and " M " type temperature characterisitic approximate reverse phase place; At last, stack preference pattern electronic circuit is made of two NMOS pipes and two resistance, and by simple logic control, both can select " M " type and the stack of " W " type benchmark is mean value output, can select to have among both the benchmark output of lower temperature coefficient again.
Because " M " and " W " all is the high-order compensation benchmark of voltage-mode structure, both have close reference voltage central value output, in full warm area scope, has approximately uniform temperature coefficient simultaneously, and it is opposite in the temperature characterisitic polarity of low-temperature zone and high temperature section two class benchmark, can further offset the temperature coefficient of two rank remnants by the method for simple addition, adopt system architecture shown in Figure 1 for this reason, can further improve the precision of benchmark.Become on the contrary greatly as if the reference temperature coefficient after causing superposeing owing to process drift, then select to have in the two-way benchmark the accurate output of a roadbed of less temperature coefficient.Therefore, the control method of this high precision reference has certain effect to the influence of eliminating the process drift generation simultaneously.
Another work of the present invention is exactly to realize above stack preference pattern high-order compensation method, on the basis that keeps higher Power Supply Rejection Ratio, realize the ultralow temperature coefficient of benchmark, and improve the robustness that its circuit technology realizes, satisfy the application demand of Circuits System to high-precision voltage reference.The high-order temperature compensated principle of overlay model band-gap reference of the present invention as shown in Figure 2, produce all lower " M " type of two opposite, complementary symmetries of opening direction and temperature coefficient and " W " type two order compensated temperature family curves earlier, carry out the linear superposition of two-way by the gating control structure then or select wherein one the tunnel directly to export, obtain high precision reference output.When voltage superposeed, regardless of two reference voltage central value relative size relations selecting, as long as the facies relationship of temperature characterisitic approximate reverse, then stack embodied the effect of improvement; If temperature characterisitic is similar to same facies relationship, then stack makes the compensation result variation on the contrary, and it is necessary selecting non-stack benchmark output this moment.
Below in conjunction with accompanying drawing, the technical scheme from four aspects to invention is elaborated.
1, " M " type temperature characterisitic produces and control
At first consider " M " type temperature characteristics electronic circuit among Fig. 3.If in the current generating circuit fully the current mirror of coupling make QM0 equate that with electric current in QM1 two branch roads what obtain is first-order linear compensation band gap benchmark, defines V
ResFor residual in the benchmark behind the linear compensation by V
BEThe nonlinear temperature item of introducing; In addition, imbalance or mismatch in the side circuit are inevitable, if the misalignment rate of introducing because of the current mirror mismatch is V
NL_m, then above two nonlinear temperature items have constituted the total error behind the benchmark linear compensation.Need under the usual conditions by introducing nonlinear compensation amount V
NL_CMake V
NL_C+ (V
NL_m+ V
Res)=0 reaches the purpose of high-order compensation.Ifs circuit structure and working point are provided with and match, can be effectively and accurately control offset voltage V
NL_mPolarity and size, then this misalignment rate can be directly used in the high-order compensation of benchmark, and can save the conventional bucking voltage that adds, this moment, high-order nonlinear compensation constraint was reduced to V
NL_m=-V
ResTherefore, obtain benchmark residual temperature coefficient after the first-order linear compensation, can obtain the control requirement that mismatch compensation is regulated.According to
V BEThe nonlinear temperature characteristic:
V in the formula
GBe the band gap voltage of silicon, normal temperature T
0=300K, thermal voltage V
TBe approximately 26 mV under the=kT/q normal temperature, g, a are respectively the coefficient relevant with collector current index temperature coefficient with triode base hole mobility.Consider V
BEThe nonlinear temperature characteristic and side circuit in the current mismatch of QM0 and QM1 branch road, the actual of voltage is output as:
R in the formula
0Be biasing branch current definition resistance, R
2For realizing the resistance of I-V translation function in the output branch road, N is the ratio that QM0 and QM1 manage the launch site area, and m is the current mirror transmission coefficient in the output circuit, b=I
C1/ I
C0It is the ratio of the electric current of two biasing circuits.Second is the linear temperature compensation rate in the formula, with V
BEIn linear temperature item compensation offset, then output voltage is the first-order linear standard of compensation, its temperature characterisitic is:
(3)
Last two have constituted the fiducial error source in the formula, just as mentioned before, derive from V respectively
BEIn nonlinear temperature item V
ResAnd the nonlinear terms V of current mismatch
NL_m, wherein because of g〉and a, V
ResShow as the temperature characterisitic that Open Side Down.Mismatch compensation requires V
NL_m=-V
Res, i.e. the V of mismatch generation
NL_mShould have the temperature characterisitic that Open Side Down generally.
If branch current I
C0(T) relative I
C1(T) there is small mismatch DI (T), b=1+DI (T)/I
C0(T), according to
x0 o'clock ln (1+
x) ≈
xApproximation relation, as long as the enough little or b of DI
1, V then
A=V
BKey condition still effective, lnb ≈ DI/I is promptly arranged
C0=R
0DI/ (V
TLnN).Further consider resistance single order TC
1With second order TC
2The influence of temperature coefficient characteristics has:
(4)
Two active temperature range differences of temperature coefficient, one at normal temperature and another is at high temperature range.The substitution resistance-temperature characteristic, non-linear offset voltage V
NL_mTemperature characterisitic be:
The controllability that the nonlinear temperature characteristic of offset current DI and resistance changes in whole warm area scope is for this misalignment rate can be used for high-order temperature compensated precondition.If V
C0V
C1, because of electric current is close etc., guarantee NM0, NM1 two pipe source potential only have less variation, and make electric current in QM0, the QM1 pipe vary with temperature the electric current subtle change amount DI (T) of generation〉0, cooperate resistance-temperature characteristic, reasonable disposition V
NL_mAmount of mismatch size and polarity and as controlled high-order compensation amount reach remaining non-linear negative temperature coefficient item V in the benchmark
ResThe compensation purpose, the key of control is offset compensation amount V
NL_mWith residual temperature coefficient amount V
ResThe complementary counteracting in whole warm area.
Owing to be difficult to accomplish complementary fully symmetry, in whole warm area scope, adopt the method difficulty of offset compensation residual temperature amount very big, if but in a certain local temperature scope, realize both compensation, then difficulty obviously reduces.The analysis showed that, the benchmark after first-order linear compensation, the temperature coefficient polarity difference under its remaining nonlinear temperature Xiang Zaigao low-temperature space, low-temperature space is a positive temperature coefficient (PTC), then changes negative temperature coefficient into after entering the high-temperature region, promptly Open Side Down for temperature curve.For adapting to the needs of high-order compensation, asymmetric and non-traditional symmetrical compensation strategy is adopted in the first-order linear compensation, be that asymmetric first compensation phase suitably increases the negative temperature coefficient amount,, the low-temperature space temperature coefficient reduced with the positive temperature coefficient (PTC) of further compensation in low-temperature space; And too high negative temperature coefficient can utilize the positive temperature coefficient (PTC) of non-linear mismatch current to compensate in the high-temperature region, reduce the high-temperature region temperature coefficient, the final high-order compensation characteristic that realizes reference temperature coefficient in the whole warm area scope, the reduction of temperature coefficient derives from the transformation of unimodal value curve to the multi-peak temperature curve.
Mismatch for current mirror, to produce harmful effect to high precision reference under the usual conditions, it is the amount that need be compensated or effectively suppress, but under the accurately controlled precondition of current mirror amount of mismatch and polarity, the non-linear current amount that the working point mismatch produces can be used for realizing high-order compensation, and key is to improve the accurate controllability to amount of mismatch.Here, increase the useful area may command mismatch size of metal-oxide-semiconductor, in addition a metal-oxide-semiconductor in the current mirror is split into the implementation in parallel of some same subunit, help self mismatch level of Control current mirror equally.In the current mirror deviation formula of being derived by current equation, choosing of W and L should be optimized its overdrive voltage when electric current was identical, improved the currents match precision of current mirror with this.Can control matching precision since the optimization of circuit parameter is chosen, equally also can control the precision of mismatch.The present invention is under the prerequisite that suppresses the W/L mismatch affects, and the mismatch by configuration node voltage obtains controlled mismatch current amount, and is used for the compensation of remaining nonlinear temperature amount.
In sum, regulate the size of PM7, PM6 and PM3 pipe among Fig. 3, the resistance of size, polarity and the resistance of reasonable disposition mismatch current DI makes V
NL_mNegative temperature system compensation quantity is provided in middle low-temperature space, and in middle high-temperature region, provide the positive temperature coefficient (PTC) compensation rate, and low-temperature space and high-temperature region are still taken effect as the leading factor with first compensation phase, then in whole warm area, can form the symmetrical distribution curve shown in Fig. 4 (a), i.e. " M " type temperature characteristics with a trough point (A point) and two wave crest points (B, C point).Simulation result shows, should be reduced to 1.12ppm/ ℃ by the temperature coefficient of " M " type benchmark in-40 ℃ ~ 125 ℃ full warm area scope.
2, " W " type temperature characterisitic produces and control
In " W " type temperature characteristics electronic circuit shown in Figure 3, if do not consider that temperature regulation circuit is the effect of compensating pipe NW4, its structure is identical with " M " type temperature characterisitic electronic circuit.Based on the high-order compensation technology of mismatch control, be applied in equally in " W " type temperature characterisitic electronic circuit, and produce similar compensating action in " M " type structure.But, rely on the mismatch control technology to be difficult in whole warm area, form " W " type temperature characteristics of a symmetry merely because low-temperature space and high-temperature region first compensation phase play a leading role.For reducing the stability of regulating difficulty and improving control, on original mismatch compensation control basis, the high temperature section compensation control structure of an additional single tube, both cooperatively interact and reach the high-order compensation target.
In " W " type temperature characteristics electronic circuit, put aside the effect of compensating pipe NW4, at first utilize mismatch control high-order compensation technology to obtain " M " type temperature characteristics identical with Fig. 4 (a) and that be symmetrically distributed, continue to regulate PW7 on this basis, the size of PW6 and PW3 pipe and resistance, by changing the size of mismatch current DI, polarity is to increase the negative temperature coefficient compensation rate, make trough point (A point) and two wave crest point (B, the C point) moves to low-temperature space, disappear until the B point, during this variation will cause under the high temperature negative temperature coefficient obviously strengthen, form temperature characteristics shown in Fig. 4 (b), low-temperature space forms " V " type temperature curve in can seeing.Comparison diagram 4 (a) as can be known, because each extreme point moves to low-temperature space, after wave crest point B disappears, only keep extreme point A and C, the temperature coefficient of temperature characteristics under middle low temperature that obtain this moment reduced to very low-level, and need to increase the positive temperature coefficient (PTC) compensation rate under the middle high temperature to form " V " type temperature curve, two synthetic " W " type temperature characteristicss that finally obtain full warm area symmetrical distribution of " V " type temperature curve.
" V " type temperature curve during the purpose of increase NW4 single tube high temperature section compensation is to form under the high temperature, this pipe only at high temperature provides the positive temperature coefficient (PTC) compensation, can realize by selecting suitable grid voltage to drive.Selected V
GS, should make the V under the low temperature
GS＜V
TH, metal-oxide-semiconductor ends and the additional offset current of nothing; After temperature raises, at V
THDescend and V
GSUnder the acting in conjunction that increases, after surpassing a certain critical point, temperature satisfies V
GSV
THAnd making the metal-oxide-semiconductor conducting and the electric current that affords redress, the high more offset current that provides of temperature is big more, after this electric current is injected into the output branch road, can increase the positive temperature coefficient (PTC) under the high temperature.
Among Fig. 3, the grid of compensating pipe NW4 connects output reference voltage, promptly keeps its grid terminal voltage V
GV
rEf
Do not vary with temperature its source terminal potential V
SHas negative temperature characteristic, the V during the setting of related potential makes under the low temperature
GS=V
Ref-V
SLess than the cut-in voltage under this temperature, offset current is zero; Enter the subthreshold linear zone under the high temperature after the NW4 conducting, the positive temperature coefficient (PTC) offset current of generation with the variation of temperature curve shown in Fig. 4 (c).Compensating pipe NW4 reduces with causing branch current definition resistance trace after RW3 is in parallel, thus the faint increase of PTAT electric current that this biasing branch road is produced, and be delivered to the output branch road by Cascode current mirror linearity, make the rising of output voltage trace.Resistance R W0 is big more, be V
SCurrent potential is high more, and it is also high more to compensate effective initial temperature; The compensating pipe size is big more, and equivalent resistance in parallel is more little, and offset current is big more.As seen,, adjust the gate source voltage of compensating pipe and can in selected high temperature section, realize compensation effect preferably, provide additional positive temperature coefficient (PTC) compensation in high temperature section for the single tube collocation structure.
In sum, in Fig. 3 structure, regulate the size of PW7, PW6 and PW3 pipe, and appropriate design compensating pipe NW4 and resistance R W0, RW2 and RW3 value, can in full warm area, form " W " type temperature characteristics that a wave crest point (D point) and two trough points (E, F point) are symmetrically distributed, shown in Fig. 4 (d).Simulation result shows, should be reduced to 1.42ppm/ ℃ by the temperature coefficient of " W " type benchmark in-40 ℃ ~ 125 ℃ temperature ranges.
3, benchmark stack or selection output
The purpose of benchmark stack is to offset complementary temperature coefficient.Consider two the voltage-mode band-gap references of " M " and " W " type that in full warm area scope, produce respectively, not only opening direction opposite, change approximate complementary symmetry and temperature coefficient very little, and the central value of benchmark is fully approaching, therefore directly choose the mean value of two benchmark, can reach the purpose that keeps compensation temperature coefficient under the constant prerequisite of reference center's value.Certainly, this complementary stack strategy also can utilize opening upwards to carry out with two first-order linear standard of compensation that Open Side Down, but, only can reach the temperature stabilization level of conventional second nonlinear standard of compensation after the stack compensation because the temperature coefficient of first-order linear standard of compensation is big; Overlay model compensation at the second order standard of compensation can obtain lower temperature coefficient in theory, but will increase by the influence of process drift.
Under the acting in conjunction of mismatch control and single tube segmented compensation structure, the characteristic waveform shape of flexible two order compensated temperatures, make fluctuating range size, the polarity of in whole temperature range, accomplishing two temperature waveforms be close to coupling fully, promptly so-called complementation at each temperature spot.To the structure that these two abundant approaching benchmark are averaged, can select the output of two independent reference of a small resistor cross-over connection, this resistance is called stack resistance.When two benchmark are identical, cross-over connection resistance two ends do not have pressure reduction and no current flows through this resistance, output voltage and two magnitudes of voltage at stack resistance point midway place are identical, and therefore, the output voltage at stack resistance point midway place is approximately the mean value of two reference voltages.
Because there is faint difference in two reference voltages, inevitable the difference of benchmark is big more in the formation pressure drop of stack resistance two ends, and the electric current in the more little then resistance of stack resistance is big more.This electric current plays the fine setting effect to the electric current of output branch road in the original standard of compensation, electric current in the stack resistance is injected in the low benchmark branch road output is improved, electric current in the stack resistance then makes output reduce to the shunting of upper reference branch current, " M " type and the output of " W " type benchmark actual after the balance slightly change than the virgin state before not superposeing, the originally high reduction of benchmark output valve, low then increase, the voltage difference that is stack resistance two ends after the balance reduces, the influence of resistance and the electric current in this resistance is mainly superposeed, control the resistance of this resistance, can limit the electric current in the resistance, this electric current can be converted into the weak voltage compensation that original complementary benchmark is provided.The result of this compensation not only makes the central value of " M " type and " W " type benchmark output more approaching, and makes the absolute value temperature coefficient decline of benchmark separately, but the complementary quality guarantee of temperature characterisitic is held constant.Like this, the mean value of two kinds of reference voltages that obtain in the center of stack resistance, its remaining second nonlinear temperature coefficient can better be offset in full warm area scope.
Under the actual process condition, component parameters such as metal-oxide-semiconductor, substrate parasitic transistor and resistance produce obvious variation with process drift inevitably, the variation of these parameters has destroyed the required condition of compensation balance, causes reference temperature family curve and temperature coefficient to take place significantly to change.Actual process emulation and experimental result all can fully prove the appreciable impact of process drift to the reference temperature characteristic.Simulation result under the different process angle finds that the result the relative typical process of the temperature coefficient under the poorest process corner angle under degenerates and reaches tens of times, and the consistance that this just prepares for high precision reference and the raising of yield rate have brought great resistance.For overcoming the influence of process drift, in the high precision reference circuit design, generally all adopt and repair the accent structure, and adopt laser mostly or burn central value and the temperature coefficient that aluminium is repaiied the method adjusting output reference of transferring resistance, reach the target call of anticipation circuit design.
Stack preference pattern structure can play the effect that similar resistance is repaiied accent to a certain extent.At first, when the polarity that " if M " type and " W " type two class benchmark change under process drift is opposite, the stack summation is averaged the degree of degeneration that can effectively reduce the reference temperature coefficient, and there is minimum temperature coefficient point in stack resistance specific location, transfer overlay model resistance in parallel to change the electric current in the overlay model resistance by repairing in addition, also can play the purpose of regulating temperature coefficient.Therefore, in the stack preference pattern, can increase by a group mode and select control signal that required State Control is provided, be chosen in location point output different in the stack resistance after the corresponding respectively stack, or change overlay model resistance.By the selectivity output of this overlay model, greatly reduce the susceptibility of high precision reference and process drift, increase control port and can realize the more effective accent effect of repairing.
4, the performance and the technology stability of stack preference pattern benchmark
Based on SMIC 0.13mm CMOS technology, in-40 ℃ ~ 125 ℃ temperature ranges, at first access temperature coefficient approximately uniform " M " and " W " type temperature characteristics, respectively as Fig. 4 (a) with (d), the temperature coefficient simulation result is respectively 1.12ppm/ ℃ and 1.42ppm/ ℃.Two kinds of temperature waveforms are finely tuned and optimize at full warm area then, extreme point A in feasible " M " type temperature characteristics, B, extreme point D in respectively corresponding " W " type temperature characteristics of C, E, F, if coupling control is proper, to obtain the ultralow temperature coefficient temperature characteristics of many extreme points after the stack output, shown in 4 (e), the simulation result of temperature coefficient is reduced to 0.17ppm/ ℃, be approximately the difference of temperature coefficient under two kinds of patterns, compare typical second order benchmark temperature coefficient and reduce, demonstrated fully the validity of overlay model under the typical process condition near an order of magnitude.
Under the atypia process corner, temperature coefficient will produce big process deviation, so be difficult to guarantee that " M " type and " W " type temperature characterisitic electronic circuit still keep the characteristic of complementary symmetry, the result of stack output is not mutual compensation perhaps like this, even makes temperature characterisitic become poorer.For fear of this situation, adopt the mode of a kind of simple digital control to select different benchmark output modes here: when stack back temperature is degenerated, not smart stacking but have the benchmark output of lower temperature coefficient in " M " or " W " type of the selection benchmark.
Specific implementation is seen the stack preference pattern electronic circuit that Fig. 3 provides, (A0 A1) selects (1,0), (0 respectively when two input control signals, 1), (1,1) during three kinds of type of drive, and the NMOS pipe (NA0, NA1) corresponding on off state is respectively (conducting, by), (end, conducting) and (conducting, conducting), will select " M " type, " W " type and the output of superimposed type benchmark respectively corresponding to benchmark.Because the temperature coefficient difference of three kinds of mode of operations under a certain process corner, therefore the output of the benchmark output replacement fixed overlay pattern band-gap reference of optimum temperature coefficient mode of operation can be selected, the temperature characterisitic degeneration that process drift is brought can be alleviated to a certain extent.
When technique change, metal-oxide-semiconductor has five kinds of typical process angles, and resistance has three kinds of typical process angles, and substrate PNP transistor has three kinds of process corner, as considers that above three's combination co-exists in 53 3=45 kind process corner.Calculate for simplifying, here only consider to influence the relatively large metal-oxide-semiconductor and the influence of resistance process corner, and when analyzing the metal-oxide-semiconductor technique change, resistance is set in typical module, and when considering that the resistance process corner changes, metal-oxide-semiconductor is set in typical module, and both make up the process corner that needs to consider and are reduced to eight kinds like this.In full warm area scope, under these eight kinds of process corner, carry out emulation in the reference temperature characteristic to " M " type, " W " type, three kinds of different modes of superimposed type respectively, the temperature coefficient that obtains is as shown in table 1, and obtains optimum under each process corner by stack preference pattern electronic circuit.As a comparison, table 1 gives the result of the temperature characterisitic of first-order linear benchmark under same process condition and circuit framework with the variation of process corner.
Table 1, the temperature coefficient (ppm/ ℃) of three kinds of pattern benchmark under the different process angle
| Reference mode | TT | SS | SNFP | FNSP | FF | R_TT | R_SS | R_FF |
| The first-order linear type | 8.2 | 8.3 | 8.2 | 8.3 | 8.2 | 8.2 | 10.0 | 9.8 |
| " M " type | 1.12 | 6.59 | 2.97 | 3.64 | 6.34 | 1.12 | 5.22 | 4.69 |
| " W " type | 1.42 | 15.61 | 2.68 | 5.67 | 26.5 | 1.42 | 4.19 | 4.05 |
| Superimposed type | 0.17 | 10.85 | 1.87 | 4.82 | 22.42 | 0.17 | 4.2 | 4.3 |
| The stack selection type | 0.17 | 6.59 | 1.87 | 3.64 | 6.34 | 0.17 | 4.19 | 4.05 |
The minimum temperature coefficient of single order linear compensation benchmark is 8.2ppm/ ℃ under the representative condition, because of process corner drift temperature coefficient maximum degenerates to 32.6 ppm/ ℃.As seen, even after the influence of considering process drift, stack preference pattern high-order compensation benchmark still keeps the superiority at single order line standard of compensation.If increase stack preference pattern resistance is repaiied the complexity of transferring structure, can further suppress the influence that process drift is degenerated to the reference temperature coefficient, improve the technology stability of high precision reference.
Owing to adopt the negative feedback control structure of three tunnel automatic biasings, except that providing, can also improve the stability of bias structure based on the mismatch compensation control, the Cascode structure that adopts of combined circuit again, the voltage stability of benchmark output further improves.Fig. 5 has provided the Power Supply Rejection Ratio PSRR characteristic of stack preference pattern precision voltage reference, and the maximum PSRR in low-frequency range reaches 80.4dB.
The high-accuracy voltage mould band-gap reference circuit that the present invention proposes based on the stack preference pattern, owing to adopt stack summation compensation to complementary temperature characterisitic high-order benchmark, its temperature coefficient possesses in full warm area scope and is lower than 0.2ppm/ ℃ performance level, repair accent by output node choice of location and stack resistance simultaneously, the technology stability of high precision reference obviously improves, and has effectively improved the practical value of high precision reference.
Claims (4)
1. high precision band-gap reference circuit based on high-order temperature compensated complementary stack, it is characterized in that: comprise " M " type and " W " type temperature characteristics electronic circuit and overlay model chooser circuit, " M " type is symmetrical arranged with the complementation of " W " type temperature characteristics electronic circuit, " M " type all comprises feedback control circuit with " W " type temperature characteristics electronic circuit, current generating circuit and output circuit, wherein connect the input end of overlay model chooser circuit behind the current generating circuit serial connection output circuit, connect the input end of current generating circuit behind the output terminal serial connection feedback control circuit of output circuit.
2. the high precision band-gap reference circuit based on high-order temperature compensated complementary stack according to claim 1, it is characterized in that: described overlay model chooser circuit is made up of two NMOS pipe NA0, NA1 and two resistance R A0, RA1, and the drain electrode of NMOS pipe NA0 meets benchmark output V by resistance R A0
Ref, the drain electrode of NMOS pipe NA1 meets benchmark output V by resistance R A1
Ref, the drain electrode of NMOS pipe NA0, NA1 connects the output terminal of two output circuits respectively.
3. the high precision band-gap reference circuit based on high-order temperature compensated complementary stack according to claim 1, the current generating circuit that it is characterized in that " M " type temperature characteristics electronic circuit: comprise 4 PMOS pipe PM1 ~ PM4, two NMOS pipe NM0, NM1, two triode QM0, QM1 and resistance R M0; PMOS manages PM1, the source electrode of PM3 interconnects, the grid of PMOS pipe PM1 is managed the grid of PM3 respectively with PMOS, the drain electrode of the drain electrode of PMOS pipe PM2 and NMOS pipe NM1, the source electrode of the drain electrode of PMOS pipe PM1 and PMOS pipe PM0 interconnects, the source electrode of the drain electrode of PMOS pipe PM3 and PMOS pipe PM2 interconnects, the grid of NM0 is managed in the drain electrode of PMOS pipe PM0 respectively with NMOS, the output terminal of feedback control circuit connects, NMOS pipe NM0 source electrode series resistor RM0 after connect the source electrode of triode QM0, the source electrode of NMOS pipe NM1 connects the source electrode of triode QM1, and the base stage of triode QM0 is connected ground connection with the base stage of triode QM0 and the emitter of emitter and triode QM0 respectively.
4. the high precision band-gap reference circuit based on high-order temperature compensated complementary stack according to claim 1, the current generating circuit that it is characterized in that " W " type temperature characteristics electronic circuit: comprise 4 PMOS pipe PM1 ~ PM4, three NMOS pipes NM0, NM1, compensating pipe NM4, two triode QM0, QM1 and resistance R M0, RM3; PMOS manages PM1, the source electrode of PM3 interconnects, the grid of PMOS pipe PM1 is managed the grid of PM3 respectively with PMOS, the drain electrode of the drain electrode of PMOS pipe PM2 and NMOS pipe NM1, the source electrode of the drain electrode of PMOS pipe PM1 and PMOS pipe PM0 interconnects, the source electrode of the drain electrode of PMOS pipe PM3 and PMOS pipe PM2 interconnects, the grid of NM0 is managed in the drain electrode of PMOS pipe PM0 respectively with NMOS, the output terminal of feedback control circuit connects, NMOS pipe NM0 source electrode series resistor RM3 successively, connect the source electrode of triode QM0 behind the RM0, the grid of compensating pipe NM4 connects the input end of overlay model chooser circuit, the drain electrode of compensating pipe NM4 and source electrode be the two ends of connecting resistance RM3 respectively, the source electrode of NMOS pipe NM1 connects the source electrode of triode QM1, and the base stage of triode QM0 is connected ground connection with the base stage of triode QM0 and the emitter of emitter and triode QM0 respectively.
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