CN102064782A - 一种甚低频耐高温特种石英晶体谐振器的制备方法 - Google Patents
一种甚低频耐高温特种石英晶体谐振器的制备方法 Download PDFInfo
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- CN102064782A CN102064782A CN2010105466476A CN201010546647A CN102064782A CN 102064782 A CN102064782 A CN 102064782A CN 2010105466476 A CN2010105466476 A CN 2010105466476A CN 201010546647 A CN201010546647 A CN 201010546647A CN 102064782 A CN102064782 A CN 102064782A
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CN201010546647.6A CN102064782B (zh) | 2010-11-16 | 2010-11-16 | 一种甚低频耐高温特种石英晶体谐振器的制备方法 |
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CN201010546647.6A CN102064782B (zh) | 2010-11-16 | 2010-11-16 | 一种甚低频耐高温特种石英晶体谐振器的制备方法 |
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CN102064782A true CN102064782A (zh) | 2011-05-18 |
CN102064782B CN102064782B (zh) | 2014-03-05 |
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Cited By (1)
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CN107547059A (zh) * | 2017-09-18 | 2018-01-05 | 眉山捷安普电子有限公司 | 一种滤波器用石英晶体ct切谐振器的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030197566A1 (en) * | 2002-04-23 | 2003-10-23 | Hirofumi Kawashima | Method for manufacturing quartz crystal resonator, quartz crystal unit and quartz crystal oscillator |
CN1633024A (zh) * | 2004-12-24 | 2005-06-29 | 熊猫电子集团有限公司 | 压控晶体振荡器中晶体谐振器的制造、安装方法 |
CN101079591A (zh) * | 2007-06-25 | 2007-11-28 | 哈尔滨工程大学 | 石英热敏谐振器 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030197566A1 (en) * | 2002-04-23 | 2003-10-23 | Hirofumi Kawashima | Method for manufacturing quartz crystal resonator, quartz crystal unit and quartz crystal oscillator |
CN1633024A (zh) * | 2004-12-24 | 2005-06-29 | 熊猫电子集团有限公司 | 压控晶体振荡器中晶体谐振器的制造、安装方法 |
CN101079591A (zh) * | 2007-06-25 | 2007-11-28 | 哈尔滨工程大学 | 石英热敏谐振器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107547059A (zh) * | 2017-09-18 | 2018-01-05 | 眉山捷安普电子有限公司 | 一种滤波器用石英晶体ct切谐振器的制作方法 |
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Inventor after: Gao Shaofeng Inventor after: Gao Qing Inventor after: Liu Qisheng Inventor before: Gao Shaofeng |
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Free format text: CORRECT: INVENTOR; FROM: GAO SHAOFENG TO: GAO SHAOFENG GAO QING LIU QISHENG |
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Address after: 518120 No. 116 Yingbin Road, Dapeng Street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Jingfeng Crystal Technology Co., Ltd. Address before: 518000 building, building 6, building second, Dapeng Industrial Zone, Dapeng street, Longgang District, Guangdong, Shenzhen Patentee before: Shenzhen Jingfeng Crystal Technology Co., Ltd. |