CN102064457A - Linear cavity high-power all-solid-state laser - Google Patents
Linear cavity high-power all-solid-state laser Download PDFInfo
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- CN102064457A CN102064457A CN 201010607181 CN201010607181A CN102064457A CN 102064457 A CN102064457 A CN 102064457A CN 201010607181 CN201010607181 CN 201010607181 CN 201010607181 A CN201010607181 A CN 201010607181A CN 102064457 A CN102064457 A CN 102064457A
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- 239000013078 crystal Substances 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims description 23
- 239000007787 solid Substances 0.000 abstract description 14
- 238000012545 processing Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005086 pumping Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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Abstract
The invention relates to the technical field of lasers, in particular to a linear cavity high-power all-solid-state laser which comprises an output mirror, a KTP (potassium titanyl oxygenic phosphate) crystal, a harmonic mirror, a side pump module, a Q switch and a back cavity mirror which are distributed on one line in sequence from left to right, wherein the side pump module comprises a side pump and a laser crystal; the side pump is a solid semiconductor diode laser; the laser crystal is a Nd:YAG crystal; a film layer of the harmonic mirror is arranged on the left end surface of the Nd:YAG crystal; and a film layer of the output mirror is arranged on the left end surface of the KTP crystal. The invention greatly improves the light beam quality and the output power of the laser, has the advantages of high efficiency, long service life, high reliability and high practicability, can be applied to the laser processing field and the laser entertainment field of high-precision semiconductors, solar batteries, and the like, and greatly meets the demands of production, processing and use.
Description
Technical field
The present invention relates to the laser technique field, refer in particular to a kind of line chamber high-power all-solid-state laser.
Background technology
The rise of laser diode (LD) pump technology makes to occur the earliest and the solid state laser of existing nearly 40 years development histories shines vitality again.
Efficiently, powerful all solid state laser (DPL) is one of most important advanced subject of laser field, it has had both the two-fold advantage of semiconductor laser and lamp pump solid state laser, performance such as have that volume is little, efficient is high, good stability and life-span are long, what become laser subject in recent years gives priority to one of direction, wide application prospect is arranged and very big market potential is arranged in fields such as scientific research, medical treatment, communication and large-sized solor demonstration, industrial processes, military affairs.
The high power all-solid state laser has important application aspect national economy, the front line science researchs such as physics, chemistry, material science, life science, environmental science, energy science; In national security fields such as laser radar, electrooptical countermeasuress great application potential is arranged more.For breaking through the development bottleneck of all solid state laser high powerization, solve core problem in science-" three height " (being high power, high light beam quality and high conversion efficiency) of all solid state high power laser light, press in conjunction with tungstate laser experimental systems such as high-average power, peak power, carry out the basic research of aspects such as laser material, principle scheme, key technology, further develop the control technology of light beam time, space, frequency spectrum.
Country's " laser high-tech and industrialization " great special plan is encouraged domesticly in the research institution that has advantage aspect high power laser light design theory, monotechnics and the system development, carries out the innovation research of high power solid-state laser technology and application.
At present, high-power all-solid-state laser laser crystal mainly contains ktp crystal and lbo crystal, owing to use the difficult debugging laser of ktp crystal, the high-power all-solid-state laser mainly uses lbo crystal on the market.Attribute by lbo crystal has determined laser cavity can only be the refrative cavity structure.Because the cavity body structure of refrative cavity is longer, the optical mirror slip that laser sees through is more, and the power of loss is bigger, and light conversion efficiency is low.
Department of electronic engineering, tsinghua university beam Zhe etc. has been delivered article " the two control drive circuits in all solid state green (light) laser of acousto-optic Q modulation ", develop novel acousto-optic driver, can the Synchronization Control acoustooptic Q-switching and operating time of LD pumping source, and have the above power output of 10W and 15ns(1 acousto-optic drives rf period) the interior Q-switch time.The energy consumption of using all solid state modulation Q green laser of this driver reduces more than 50%, and temperature rise reduces more than 10 ℃, and heat-stable time reduces to 22%, with the LD pumping of 1W, has obtained the green laser output of no spurious pulse of pulsewidth 14.5ns, peak power 1kW.
Physics system of Northwest University separates intelligent bright grade and has delivered article " the two Nd:YVO4 continuous green lasers of both-end pumping ", for the power output and the light-light conversion efficiency of all solid state laser that improves diode pumped, design and used the two Nd:YVO4 green (light) lasers of both-end pumping.The influence of two laser crystal thermal lensing effects for resonant cavity stability analyzed in research by the laser crystal temperature field characteristics and according to the transmission matrix of light beam, designed the two laser crystal refrative cavities of both-end pumping.In the two Nd:YVO4 green (light) laser systems of both-end pumping, lbo crystal has adopted I class noncritical phase matching intracavity frequency doubling mode, when the pumping luminous power is 26.56W, obtained the steady and continuous green glow output of 5.5W, its light-light conversion efficiency is 20.7%.The result shows simultaneously, inserts two gain mediums in resonant cavity, not only can improve the light-light conversion efficiency of laser, and two laser crystal thermal lensing effect results of interaction can strengthen the stability of resonant cavity.
Yet, thereby the thermal effect of ktp crystal and acousto-optic Q switch close and do not live the output that door has limited high power green light greatly, particularly in the resonant cavity of intracavity frequency doubling, power density is high especially, though this can improve shg efficiency, but too high power density causes the more significant thermal effect of frequency-doubling crystal, causes the frequency-doubling crystal phase mismatch, greatly reduces shg efficiency; On the other hand, acousto-optic Q switch closes and constantly causes light to leak, and lowers efficiency.Therefore, the power output of existing laser is accomplished in the 30W, is difficult to satisfy the demand that production and processing is used.
Summary of the invention
The line chamber high-power all-solid-state laser that the technical problem to be solved in the present invention provides a kind of good beam quality, power output is big, efficient is high, the life-span is long.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: a kind of line chamber high-power all-solid-state laser, comprise outgoing mirror, ktp crystal, harmonic wave mirror, side pump module, Q switching and Effect of Back-Cavity Mirror, described outgoing mirror, ktp crystal, harmonic wave mirror, side pump module, Q switching and Effect of Back-Cavity Mirror are linearly from left to right arranged successively; Described side pump module comprises profile pump and laser crystal, and this profile pump is the solid-state semiconductor diode laser, and described laser crystal is the Nd:YAG crystal; The rete of described harmonic wave mirror is arranged at the left side of the Nd:YAG crystal of described side pump module, and the rete of outgoing mirror is arranged at the left side of ktp crystal.
Wherein, the plated film index of the left surface of described Effect of Back-Cavity Mirror is HR@1064nm, and the plated film index of the right flank of Effect of Back-Cavity Mirror is AR@1064nm.
Wherein, the plated film index of the left surface of described Q switching is AR@1064nm, and the plated film index of the right flank of Q switching is AR@1064nm.
Wherein, the plated film index of the left surface of the Nd:YAG crystal of described side pump module is AR@1064nm and HR@532nm, and the plated film index of the right flank of Nd:YAG crystal is AR@1064nm.
Wherein, the plated film index of the left surface of described ktp crystal is HR@1064nm and AR@532nm, and the plated film index of the right flank of ktp crystal is AR@1064﹠amp; 532nm.
Wherein, the distance between the left surface of the right flank of the Nd:YAG crystal of described side pump module and Q switching is 15mm～25 mm.
Wherein, the distance between the stage casing of the Nd:YAG crystal of the stage casing of described ktp crystal and described side pump module is 110mm～130 mm.
Wherein, the distance between the stage casing of the Nd:YAG crystal of the stage casing of described Effect of Back-Cavity Mirror and described side pump module is 110mm～130 mm.
Wherein, described ktp crystal is high anti-grey mark ktp crystal.
Beneficial effect of the present invention is: the invention provides a kind of line chamber high-power all-solid-state laser, adopt the line chamber structure, and the left side of the rete of harmonic wave mirror directly being accomplished the Nd:YAG crystal, it is the left side of YAG rod, the left side that the rete of outgoing mirror is directly accomplished ktp crystal, so a whole set of laser has only an independent Effect of Back-Cavity Mirror (M1 eyeglass), and is simple and reliable for structure, volume is little, conversion efficiency is high, power output is 50W, and peak-peak power is greater than 25KW.Line chamber high-power all-solid-state laser of the present invention integrates the advantage of semiconductor laser and solid state laser, power output is 50W, repetition rate 10KHz-100 KHz, laser pulse width is less than 30ns, peak-peak power is greater than 25KW, wavelength is 532nm, the beam quality and the power output of laser have been improved greatly, the efficient height, the life-span is long, reliability is high, can be applicable to field of laser processing and laser amusement fields such as high-precision semiconductor and solar cell, satisfied the demand that production and processing is used greatly, practical.
Description of drawings
Fig. 1 is a principle of the invention block diagram.
Fig. 2 is a structural representation of the present invention.
Embodiment
For the ease of those skilled in the art's understanding, the present invention is further illustrated below in conjunction with embodiment and accompanying drawing, and the content that execution mode is mentioned not is a limitation of the invention.
As depicted in figs. 1 and 2, a kind of line chamber high-power all-solid-state laser, comprise outgoing mirror 1, ktp crystal 2, harmonic wave mirror 3, side pump module 4, Q switching 5 and Effect of Back-Cavity Mirror 6, described outgoing mirror 1, ktp crystal 2, harmonic wave mirror 3(M2 eyeglass), side pump module 4, Q switching 5 and Effect of Back-Cavity Mirror 6(M1 eyeglass) linearly from left to right arrange successively; Described side pump module 4 comprises profile pump and laser crystal, and this profile pump is solid-state semiconductor diode laser (LD), and described laser crystal is Nd:YAG crystal (neodymium-doped yttrium-aluminum garnet); The rete of described harmonic wave mirror 3 is arranged at the left side of Nd:YAG crystal, and the rete of outgoing mirror 1 is arranged at the left side of ktp crystal 2.The resonant cavity of present embodiment is an I class noncritical phase matching KPT crystal intracavity frequency doubling structure, puts into acousto-optic light modulation Q switching 5 in the resonant cavity, has realized the output of giant pulse green laser.
At first, because the emission wavelength of semiconductor laser and the absworption peak of solid laser working substance match, the pump light pattern can be complementary with laser oscillation mode well in addition, thereby the light light conversion efficiency is very high, reached more than 50%, overall efficiency also can be suitable with carbon dioxide laser, exceeds a magnitude than lamp pump solid state laser, thereby the diode-pumped laser volume is little, in light weight, compact conformation; Secondly, the life-span of solid-state semiconductor diode laser (LD) is longer than photoflash lamp greatly, reaches 15000 hours, the energy stability of pump light is good, than the excellent order of magnitude of flash lamp pumping, dependable performance, be the full device that solidifies, Maintenance free is particularly useful for large-scale production line; In addition,, reduced the thermal lensing effect of working-laser material, improved the output beam quality of laser greatly owing to the high conversion efficiency of diode-pumped nd yag laser.
The technical program adopts the line chamber structure, and the left side of the rete of harmonic wave mirror 3 directly being accomplished the Nd:YAG crystal, it is the left side of YAG rod, the left side that the rete of outgoing mirror 1 is directly accomplished ktp crystal 2, so a whole set of laser has only an independent Effect of Back-Cavity Mirror 6(M1 eyeglass), the structure of employing line chamber, thereby it is long to have shortened the chamber, required optical mirror slip is also less, and wasted power is also less, the light conversion efficiency height; Simple and reliable for structure, volume is little, conversion efficiency is high, power output is 50W, peak-peak power is greater than 25KW.Line chamber high-power all-solid-state laser of the present invention integrates the advantage of semiconductor laser and solid state laser, power output is 50W, repetition rate 10KHz-100 KHz, laser pulse width is less than 30ns, peak-peak power is greater than 25KW, wavelength is 532nm, the beam quality and the power output of laser have been improved greatly, the efficient height, the life-span is long, reliability is high, can be applicable to field of laser processing and laser amusement fields such as high-precision semiconductor and solar cell, satisfied the demand that production and processing is used greatly, practical.
In the technical program, the plated film index of the left surface of described Effect of Back-Cavity Mirror 6 is HR@1064nm, and the plated film index of the right flank of Effect of Back-Cavity Mirror 6 is AR@1064nm; The plated film index of the left surface of described Q switching 5 is AR@1064nm, and the plated film index of the right flank of Q switching 5 is AR@1064nm; The plated film index of the left surface of the Nd:YAG crystal of described side pump module 4 is AR@1064nm and HR@532nm, and the plated film index of the right flank of Nd:YAG crystal is AR@1064nm; The plated film index of the left surface of described ktp crystal 2 is HR@1064nm and AR@532nm, and the plated film index of the right flank of ktp crystal 2 is AR@1064﹠amp; 532nm.
Concrete, the distance between the right flank of the Nd:YAG crystal of described side pump module 4 and the left surface of Q switching 5 is 15mm～25 mm; Distance between the stage casing of the Nd:YAG crystal of the stage casing of described ktp crystal 2 and described side pump module 4 is 110mm～130 mm; Distance between the stage casing of the Nd:YAG crystal of the stage casing of described Effect of Back-Cavity Mirror 6 and described side pump module 4 is 110mm～130 mm.It is long that the present invention has shortened the chamber of laser, reduced the volume size of equipment, and compact conformation conveniently transports, installs and deposits.Preferred embodiment be: the distance between the right flank of the Nd:YAG crystal of described side pump module 4 and the left surface of Q switching 5 is 20 mm; Distance between the stage casing of the Nd:YAG crystal of the stage casing of described ktp crystal 2 and described side pump module 4 is 120mm; Distance between the stage casing of the stage casing of described Effect of Back-Cavity Mirror 6 and Nd:YAG crystal is 120 mm.
The described ktp crystal 2 of present embodiment is high anti-grey mark ktp crystal 2, adopts high anti-grey mark ktp crystal 2, when having improved efficient, has further prolonged the useful life of equipment.
The foregoing description is one of preferable implementation of the present invention, and in addition, the present invention can also realize that any without departing from the inventive concept of the premise conspicuous replacement is all within protection scope of the present invention by alternate manner.
Claims (9)
1. line chamber high-power all-solid-state laser, comprise outgoing mirror (1), ktp crystal (2), harmonic wave mirror (3), side pump module (4), Q switching (5) and Effect of Back-Cavity Mirror (6), it is characterized in that: described outgoing mirror (1), ktp crystal (2), harmonic wave mirror (3), side pump module (4), Q switching (5) and Effect of Back-Cavity Mirror (6) linearly from left to right set gradually; Described side pump module (4) comprises profile pump and laser crystal, and this profile pump is the solid-state semiconductor diode laser, and described laser crystal is the Nd:YAG crystal; The rete of described harmonic wave mirror (3) is arranged at the left side of described Nd:YAG crystal, and the rete of outgoing mirror (1) is arranged at the left side of ktp crystal (2).
2. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the plated film index of the left surface of described Effect of Back-Cavity Mirror (6) is HR@1064nm, and the plated film index of the right flank of Effect of Back-Cavity Mirror (6) is AR@1064nm.
3. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the plated film index of the left surface of described Q switching (5) is AR@1064nm, and the plated film index of the right flank of Q switching (5) is AR@1064nm.
4. line chamber high-power all-solid-state laser according to claim 1, it is characterized in that: the plated film index of the left surface of the Nd:YAG crystal of described side pump module is AR@1064nm and HR@532nm, and the plated film index of the right flank of Nd:YAG crystal is AR@1064nm.
5. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the plated film index of the left surface of described ktp crystal (2) is HR@1064nm and AR@532nm, and the plated film index of the right flank of ktp crystal (2) is AR@1064﹠amp; 532nm.
6. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the distance between the left surface of the right flank of the Nd:YAG crystal of described side pump module and Q switching (5) is 15mm～25 mm.
7. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the distance between the stage casing of the stage casing of described ktp crystal (2) and the Nd:YAG crystal of described side pump module is 110mm～130 mm.
8. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: the distance between the stage casing of the stage casing of described Effect of Back-Cavity Mirror (6) and the Nd:YAG crystal of described side pump module is 110mm～130 mm.
9. line chamber high-power all-solid-state laser according to claim 1 is characterized in that: described ktp crystal (2) is high anti-grey mark ktp crystal.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532418A (en) * | 2016-12-13 | 2017-03-22 | 天水师范学院 | Low-threshold Nd:YAG laser device driven by solar cell panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
| CN101728757A (en) * | 2008-10-30 | 2010-06-09 | 北京中视中科光电技术有限公司 | All-solid-state laser |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
| CN101728757A (en) * | 2008-10-30 | 2010-06-09 | 北京中视中科光电技术有限公司 | All-solid-state laser |
Non-Patent Citations (2)
| Title |
|---|
| 《CNKI中国优秀硕士学位论文全文数据库（信息科技辑）》 20071015 徐海萍 LD侧泵全固态Nd：YAG/KTP高功率连续绿光激光器研究 第四章图4-7，4.2实验参数的确定，4.3实验结果与分析，第五章 1-9 , 2 * |
| 《厦门大学学报》 20070331 刘孙丽等 连续输出1.60W/473nm直腔蓝光激光器 179-182 1-9 第46卷, 第2期 2 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532418A (en) * | 2016-12-13 | 2017-03-22 | 天水师范学院 | Low-threshold Nd:YAG laser device driven by solar cell panel |
| CN106532418B (en) * | 2016-12-13 | 2024-05-07 | 天水师范学院 | Solar panel driven low threshold Nd: YAG laser |
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