CN101728757A - All-solid-state laser - Google Patents
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- CN101728757A CN101728757A CN200810225193A CN200810225193A CN101728757A CN 101728757 A CN101728757 A CN 101728757A CN 200810225193 A CN200810225193 A CN 200810225193A CN 200810225193 A CN200810225193 A CN 200810225193A CN 101728757 A CN101728757 A CN 101728757A
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Abstract
The invention relates to an all-solid-state laser, which comprises a resonant cavity, and is characterized in that: the resonant cavity comprises a neodymium-doped vanadic acid gadolinium crystal used as a laser crystal; and the dosage concentration of neodymium in the neodymium-doped vanadic acid gadolinium crystal is at least 0.5atm percent. The all-solid-state laser realizes output of 960nm laser for the first time, and the laser belongs to an infrared band and has wide application prospect, for example, infrared laser is used for micromachining materials and monitoring industrial machining environmental safety; and the infrared laser can also be used for laser welding and manufacturing welding seams with hardness exceeding that of a raw material.
Description
Technical field
The present invention relates to the laser technique field, relate in particular to a kind of all solid state laser.
Background technology
In the prior art, typically use semiconductor laser and obtain the output of 960nm laser, although the semiconductor laser volume is little, integrated level is high, beam quality is relatively poor, can't obtain powerful laser output.And all solid state laser has series of advantages such as life-span length, good stability and good beam quality, can be applied in every field.
On the other hand, available technology adopting neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) crystal can obtain 912nm laser, 1063nm laser and 1341nm laser, and by frequency multiplication or and frequently technology obtain other wave band of laser output.For example one piece of publication number U.S. Patent Publication that is US005420876 a kind of Nd:GdVO that utilizes
4The gain microplate obtains all solid state laser that 532nm laser is exported by intracavity frequency doubling, and as shown in Figure 1, this all solid state laser comprises pumping source 101, input mirror 102, Nd:GdVO
4 Laser gain microplate 103, frequency-doubling crystal 104 and outgoing mirror 105.Input mirror 102 is average mirror, and outgoing mirror 105 is the plano-concave mirror, and frequency-doubling crystal 104 is the KTP frequency-doubling crystal.This all solid state laser course of work is as follows, and the pump light that pumping source 101 produces enters Nd:GdVO by input mirror 102
4 Laser gain microplate 103 produces 1063nm fundamental frequency light, and 1063nm fundamental frequency light obtains the second harmonic output of 532nm by the KTP frequency-doubling crystal.More than be that prior art is utilized neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) laser that crystal obtained, but so far, also do not use neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) all solid state laser obtains 960nm laser.
Summary of the invention
The purpose of this invention is to provide a kind of neodymium-doped vanadic acid gadolinium (Nd:GdVO that utilizes
4) crystal produces all solid state laser of 960nm laser, but also can obtain the blue laser of 480nm wavelength by frequency multiplication.
In order to realize the foregoing invention purpose, the invention provides a kind of all solid state laser, comprise resonant cavity, it is characterized in that described resonant cavity comprises the neodymium-doped vanadic acid gadolinium crystal as laser crystal, the doping content of neodymium is at least 0.5atm% in the described neodymium-doped vanadic acid gadolinium crystal.
In the technique scheme, described all solid state laser also comprises pumping source, and described pumping source emission can be by the light of the near-infrared wavelength of described neodymium-doped vanadic acid gadolinium crystal strong absorption.
In the technique scheme, described pumping source is semiconductor laser, xenon lamp or krypton lamp.
In the technique scheme, described semiconductor laser is that emission center wavelength is GaAs semiconductor laser or the GaAlAs semiconductor laser of 808nm.
In the technique scheme, described resonant cavity has the first chamber face and the second chamber face, and the described first chamber face is that pump light incides the face in the resonant cavity, and the described second chamber face is the output face of resonant cavity; The first chamber face of described resonant cavity and the second chamber face all are coated with the reflectance coating of 960nm.
In the technique scheme, the first chamber face of described resonant cavity is coated with the anti-reflection film to 808nm laser.
In the technique scheme, in the first chamber face and the second chamber face of described resonant cavity, have at least a chamber face to be coated with the anti-reflection film of 1063nm laser; In the first chamber face and the second chamber face of described resonant cavity, have at least a chamber face to be coated with the anti-reflection film of 1341nm laser.
In the technique scheme, the exit facet of described neodymium-doped vanadic acid gadolinium crystal is coated with the anti-reflection film of 1063nm and 1341nm.
In the technique scheme, described all solid state laser also comprises coupled lens, and described coupled lens is GRIN Lens, post lens, aspherical mirror or coupled lens group.
In the technique scheme, the described coupled lens plane of incidence and exit facet all are coated with the anti-reflection film to wavelength 808nm.
In the technique scheme, described resonant cavity also comprises outgoing mirror, and described outgoing mirror is plano-concave mirror or average mirror.
In the technique scheme,, described all solid state laser also comprises at least one frequency-doubling crystal, described frequency-doubling crystal is placed on the output light path of described neodymium-doped vanadic acid gadolinium crystal.
In the technique scheme, described frequency-doubling crystal can be LBO, PPLN, BBO, BiBO, LN, KNO
3, PPKTP, KTA, CBO, CLBO, PPMgOLN, KN or LiI; Also can be semi-conducting material.
In the technique scheme, described all solid state laser also comprises temperature-adjusting device.
In the technique scheme, described temperature-adjusting device is used for described all solid state laser is controlled in 17 to 37 degrees centigrade temperature.
The present invention compared with prior art has following technique effect:
The present invention has realized the output of 960nm laser first with all solid state laser, this laser belongs to infrared band, have a extensive future, for example, infrared laser is used for the little processing of material, is used to monitor the industrial processes Environmental security and is used as EVAC (Evacuation Network Computer Model) to protect dual-use plane; Infrared laser also can be applicable to laser welding, can produce the soldered above raw material hardness.
Can obtain various frequencys multiplication and frequency and the output of difference frequency laser of 960nm by the present invention.Especially can obtain the 480nm blue laser by frequency multiplication.All solid state 480nm blue laser can be applied in a lot of fields, for example, the full-solid-state blue laser of high brightness can be used as the blue module of the standard three primary light source of color laser demonstration, the LASER Light Source of this novel low-power consumption, long-life, high light beam quality is compared not only efficient height with fluorescence light source, and more faithful to natural daylight, can eliminate the yellow shadow of incandescent source generation and the green shadow that fluorescence light source produces, realize the balance of three primary colors; Utilize full-solid-state blue laser can realize the storage of all digital informations, comprise application such as audio frequency, video, TV, photo, compare that the advantage of blue laser is that wavelength is short with the laser diode of the 780nm that is commonly used for light source at present, spot areas is little, and memory space is big; This full-solid-state blue laser also can be used as the light source of various CDs in the digital video field; In addition, this full-solid-state blue laser also is expected to be widely used in many fields such as digital-to-analogue conversion device, laser printing, laser medicine, biochemical technology, material science and optical communications.
Description of drawings
Fig. 1 utilizes neodymium-doped vanadic acid gadolinium (Nd:GdVO for prior art
4) all solid state laser structural representation of crystal output 532nm laser;
Fig. 2 is neodymium-doped vanadic acid gadolinium (Nd:GdVO under the room temperature
4) the fluorescence Spectra line chart of crystal;
The 960nm laser light spectrogram that Fig. 3 (a) obtains for the present invention;
Fig. 3 (b) is a kind of all solid state laser structural representation that obtains 960nm laser of the present invention;
Fig. 4 is a kind of all solid state laser structural representation that obtains the 480nm blue laser of the present invention;
Fig. 5 is the another kind of all solid state laser structural representation that obtains the 480nm blue laser of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done more detailed description.
Fig. 2 is neodymium-doped vanadic acid gadolinium (Nd:GdVO under the room temperature
4) the fluorescence Spectra line chart of crystal.As shown in Figure 2,3 spectral lines of emission the strongest lay respectively at centre wavelength 912.6nm (
4F
3/2→
4I
9/2), 1063.1nm (
4F
3/2→
4I
11/2) and 1341.3nm (
4F
3/2→
4I
13/2) locate, wherein the strongest is the 1063.1nm spectral line.Nd:GdVO
4Crystal
4F
3/2→
4I
11/2With
4F
3/2→
4I
13/2Laser transition all is four level system,
4F
3/2→
4I
9/2Laser transition is the quasi-three-level system, has absorbing phenomenon again in the quasi-three-level system.Because Nd:GdVO
4The absorption coefficient again of crystal is bigger, simultaneously because the high more absorption again of neodymium ion (Nd) doping content is serious more, so serious absorption loss has again limited the output of the 912.6nm laser of quasi-three-level system.Experiment showed, this moment if restrain the output of 1063.1nm and 1341.3nm laser by a large amount of, the two can not be swashed penetrate, and work as Nd:GdVO
4When the doping content of crystal was not less than 0.5atm% (atm% is the expression atomic percent), a kind of peak wavelength was that the laser of 960nm is excited out.Fig. 3 (a) is the Nd:GdVO of 0.5atm% for doping content
4Crystal is by the resulting output laser line of 808nm diode-end-pumped figure, Fig. 3 (a) is the measurement curve of spectrometer, can obviously see two spectral lines, the higher spectral line of its medium wave peak is that peak wavelength is a 960nm output laser, the spectral line that another crest is lower is that centre wavelength is the pump light of 808nm, and other wavelength laser all is suppressed or loses and not output.
Fig. 3 (b) is a kind of all solid state laser structural representation that obtains 960nm laser of the present invention, and it comprises pumping source 301, coupled lens 302, neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) crystal 3 03 and outgoing mirror 304.Place coupled lens 302, Nd:GdVO on the output light path of pumping source 301 successively
4Crystal 3 03 and outgoing mirror 304.Above-mentioned all solid state laser also comprises temperature-adjusting device, temperature-adjusting device is controlled in all solid state laser about 27 under the temperature of (positive and negative be no more than 10 degrees centigrade), and temperature-adjusting device can be conventional temperature adjusting devices such as TEC refrigerator or fin.Pumping source 301 employing output laser center wavelengths are the GaAs semiconductor laser of 808nm in the present embodiment; Coupled lens 302 is a GRIN Lens, plays the effect that focuses on coupling; Nd:GdVO
4It is the Nd:GdVO of 0.5atm% that crystal 3 03 adopts the doping content of Nd
4Crystal, outgoing mirror 304 is the plano-concave mirror.The both ends of the surface of GRIN Lens all are coated with 808nm laser anti-reflection film (transmitance is at least 99.8%); Nd:GdVO
4The plane of incidence of crystal 3 03 is coated with 808nm anti-reflection film (transmitance is at least 99.5%), 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%) and 960nm laser reflective film (reflectivity is at least 99.8%); Nd:GdVO
4The exit facet of crystal 3 03 is coated with 960nm laser anti-reflection film (transmitance is at least 99.8%), 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%); The plane of incidence of outgoing mirror 304 is coated with 960nm laser reflective film (reflectivity is 99%), 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%); The exit facet of outgoing mirror 304 is coated with 960nm laser anti-reflection film (transmitance is at least 99.8%), 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%).Nd:GdVO wherein
4The plane of incidence of the plane of incidence of crystal 3 03 and outgoing mirror 304 constitutes laserresonator, Nd:GdVO
4The plane of incidence of crystal 3 03 is called the first chamber face, and the plane of incidence of outgoing mirror 304 is called the second chamber face (the present invention defines the face that pump light incides in the resonant cavity and is called the first chamber face, and the output face of resonant cavity is called the second chamber face).
The pump light of GaAs semiconductor laser output is coupled to Nd:GdVO by GRIN Lens
4In the crystal 3 03, end pumping Nd:GdVO
4Crystal 3 03, Nd:GdVO
4Neodymium ion absorptive pumping light in the crystal 3 03, the 960nm laser of neodymium ion stimulated radiation generation vibrates in resonant cavity then, when gain during greater than loss, the laser that just has peak wavelength and be 960nm is from outgoing mirror 304 outputs, and the plano-concave mirror plays the effect to the shaping output of 960nm laser.It is the GaAs diode-end-pumped of 3W that present embodiment adopts power output, and the power output of all solid state laser is 30mW.
In the present embodiment, having adopted doping content is the Nd:GdVO of 0.5atm%
4Crystal can certainly adopt the Nd:GdVO of 0.7atm%
4Crystal can also further improve doping content, as 0.9atm% and 3atm%.A large amount of experimental datas show, when the doping content of the active ions of laser crystal improved, the beam quality and the electric light transformation efficiency of the 960nm laser of output were improved.For example, when the pumping source power output also is 3W, and the doping content of active ions is when being 0.7atm%, the power output of all solid state laser is 40mW, and the beam quality of laser output and electric light transformation efficiency all are higher than and are all the 3W pump power but the doping content of active ions all solid state laser is obtained when being 0.5atm% beam quality and electric light transformation efficiency.
Plano-concave mirror in the present embodiment also can adopt average mirror to replace, and certain outgoing mirror 304 also can be save need not.When outgoing mirror is save not time spent, Nd:GdVO
4The rete of the plane of incidence of crystal 3 03 does not change, and its exit facet changes plating 1341nm, 1063nm anti-reflection film (transmitance is at least 90%) and 960nm reflectance coating (reflectivity is 99%) into.Nd:GdVO
4The plane of incidence of crystal 3 03 and its exit facet form laserresonator, wherein Nd:GdVO
4The plane of incidence of crystal 3 03 is called the first chamber face, and its exit facet is called the second chamber face.
960nm laser belongs to infrared band, has a extensive future.For example, infrared laser is used for the little processing of material, is used to monitor the industrial processes Environmental security and is used as EVAC (Evacuation Network Computer Model) to protect dual-use plane; Infrared laser also can be applicable to laser welding, can produce the soldered above raw material hardness.
Fig. 4 is a kind of all solid state laser structural representation that obtains the 480nm blue light of the present invention, and it comprises pumping source 401, coupled lens 402, neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) crystal 4 03, outgoing mirror 404 and frequency-doubling crystal 405.Wherein be placed with coupled lens 402, neodymium-doped vanadic acid gadolinium (Nd:GdVO on the output light path of pumping source 401 successively
4) crystal 4 03, frequency-doubling crystal 405 and outgoing mirror 404.Above-mentioned all solid state laser also comprises temperature-adjusting device, temperature-adjusting device is used for all solid state laser is controlled at about 27 the temperature of (positive and negative be no more than 10 degrees centigrade), and temperature-adjusting device can be conventional temperature adjusting devices such as TEC refrigerator or fin.Pumping source 401 is the GaAlAs semiconductor laser, and coupled lens 402 adopts post lens, Nd:GdVO
4The neodymium ion doped concentration of crystal 4 03 is 0.9atm%, and frequency-doubling crystal 405 adopts LBO (three lithium borates) I class phase matched frequency-doubling crystal, and outgoing mirror 404 is the plano-concave mirror.Wherein, post lens both ends of the surface all are coated with 808nm pump light anti-reflection film (transmitance is at least 99.8%); Nd:GdVO
4The plane of incidence of crystal 4 03 is coated with the anti-reflection film (transmitance is at least 99.5%) of 960nm reflectance coating (reflectivity is at least 99.8%), 808nm and 1341nm and 1063nm laser anti-reflection film (transmitance is at least 90%), Nd:GdVO
4The exit facet of crystal 4 03 is coated with 960nm laser anti-reflection film (transmitance is at least 99.8%), 480nm laser reflective film (reflectivity is at least 99.5%) and 1341nm and 1063nm laser anti-reflection film (transmitance is at least 90%); The LBO frequency-doubling crystal plane of incidence is coated with to 480nm laser anti-reflection film (transmitance is at least 99.5%) with to 960nm laser anti-reflection film (transmitance is at least 99.8%), and LBO frequency-doubling crystal exit facet is coated with 480nm laser anti-reflection film (transmitance is at least 99.5%) and 960nm laser anti-reflection film (transmitance is at least 99.8%); The plane of incidence of outgoing mirror 404 is coated with 960nm laser reflective film (reflectivity is at least 99.8%), 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%) and 480nm laser anti-reflection film (transmitance is at least 99%), and the exit facet of outgoing mirror 404 is coated with 1063nm and 1341nm laser anti-reflection film (transmitance is at least 90%) and 480nm laser anti-reflection film (transmitance is at least 99%).
At first the pump light of the 808nm that produces of GaAlAs semiconductor laser by the post Lens Coupling to Nd:GdVO
4In the crystal 4 03, Nd:GdVO
4Behind the neodymium ion absorptive pumping light in the crystal 4 03, the 960nm laser that the neodymium ion stimulated radiation produces forms 480nm second harmonic blue laser from outgoing mirror 404 outputs after LBO frequency-doubling crystal frequency multiplication, outgoing mirror 404 plano-concave mirrors play the effect of shaping output 480nm laser.
Fig. 5 is the another kind of all solid state laser structural representation that obtains the 480nm blue light of the present invention, and it comprises pumping source 501, coupled lens 502, neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) crystal 5 03 and frequency-doubling crystal 504.Neodymium-doped vanadic acid gadolinium (Nd:GdVO wherein
4) crystal 5 03 and frequency-doubling crystal 504 be combined into one by gummed, optical cement or ionic bonding, forms a crystal block.Nd:GdVO
4The doping content of crystal 5 03 is 2atm%, coupled lens 502 planes of incidence and exit facet all are coated with the anti-reflection film (transmitance is at least 99.8%) of 808nm, the plane of incidence of crystal block is coated with 808nm anti-reflection film (transmitance is at least 95%), the anti-reflection film of 1063nm and 1341nm (transmitance is at least 90%), the reflectance coating (reflectivity is at least 99%) of the reflectance coating of 960nm (reflectivity is at least 99.8%) and 480nm, exit facet are coated with the reflectance coating (reflectivity is at least 99.8%) of 960nm, the anti-reflection film (transmitance is at least 90%) of 480nm anti-reflection film (transmitance is at least 99%) and 1063nm and 1341nm.Wherein, the plane of incidence of crystal block and exit facet constitute laserresonator.
Coupled lens 502 adopts the post lens in the present embodiment, and frequency-doubling crystal 504 be the PPLN crystal, and pumping source 501 is the GaAlAs semiconductor laser, and the GaAlAs semiconductor laser is exported the pump light of 808nm, pump light by the post Lens Coupling to crystal block (Nd:GdVO
4The one of crystal 5 03 and frequency-doubling crystal 504 combinations) on, pump light is through the laser of output 480nm after the crystal block.Certainly, the Nd:GdVO that forms crystal block in the present embodiment
4Crystal 5 03 and PPLN crystal also can be placed apart, are equivalent to the situation that Fig. 4 removes outgoing mirror 404, in such cases and the plated film situation of Fig. 4 compare Nd:GdVO
4Plated film on the crystal 5 03 and the Nd:GdVO among Fig. 4
4The plated film of crystal 4 03 is identical, correspondingly frequency-doubling crystal 405 plated films among frequency-doubling crystal 504 relative Fig. 4 change, it is the anti-reflection film (transmitance is greater than 99.5%) that the plane of incidence of frequency-doubling crystal 504 is coated with 960nm anti-reflection film (transmitance is greater than 99.8%) and 480nm, exit facet is coated with anti-reflection film (transmitance is greater than 90%) and the 960nm reflectance coating (reflectivity is greater than 99.8%) of 480nm anti-reflection film (transmitance is at least 99%), 1341nm and 1063nm, Nd:GdVO
4The exit facet of the plane of incidence of crystal 5 03 and frequency-doubling crystal 504 forms laserresonator, Nd:GdVO
4The plane of incidence of crystal 5 03 is called the resonant cavity first chamber face, and the exit facet of frequency-doubling crystal 504 is called the resonant cavity second chamber face.
All solid state 480nm blue laser can be applied in a lot of fields, for example, the full-solid-state blue laser of high brightness can be used as the blue module of the standard three primary light source of color laser demonstration, the LASER Light Source of this novel low-power consumption, long-life, high light beam quality is compared not only efficient height with fluorescence light source, and more faithful to natural daylight, can eliminate the yellow shadow of incandescent source generation and the green shadow that fluorescence light source produces, realize the balance of three primary colors; Utilize full-solid-state blue laser can realize the storage of all digital informations, comprise application such as audio frequency, video, TV, photo, compare that the advantage of blue laser is that wavelength is short with the laser diode of the 780nm that is commonly used for light source at present, spot areas is little, and memory space is big; This full-solid-state blue laser also can be used as the light source of various CDs in the digital video field; In addition, this full-solid-state blue laser also is expected to be widely used in many fields such as digital-to-analogue conversion device, laser printing, laser medicine, biochemical technology, material science and optical communications.
Each optical element institute's coatings and reflectivity thereof or transmitance are preferred exemplary among the present invention, can do suitable adjustment during real work, and especially the rete of 1341nm and 1063nm is worked as Nd:GdVO
4The plane of incidence of crystal is during as the first chamber face of resonant cavity, preferably at Nd:GdVO
4The exit facet of crystal is coated with 1063nm and 1341nm anti-reflection film simultaneously; When all solid state laser is added with input mirror, input mirror is during as the first chamber face of resonant cavity, Nd:GdVO
4The plane of incidence of crystal and exit facet all preferably are coated with 1063nm and 1341nm anti-reflection film.And, can only on one of them chamber face of the resonant cavity first chamber face and the second chamber face, be coated with the anti-reflection film of 1063nm and 1341nm as long as the transmitance of film is enough high; Perhaps be coated with wherein a kind of anti-reflection film of wavelength of 1063nm and 1341nm, be different from the anti-reflection film of the another kind of wavelength of the first chamber face simultaneously in the resonant cavity second chamber face plating at the resonant cavity first chamber face.In a word, suppress 1063nm and 1341nm starting of oscillation as long as rete can satisfy, obtain laser output and get final product, this it will be appreciated by those skilled in the art that.
Pumping source among the present invention can adopt the single tube semiconductor laser, also can adopt semi-conductor array laser, xenon lamp or krypton lamp etc.; Coupled lens can also adopt aspherical mirror or coupled lens group and other to have the optical element of converging action except using GRIN Lens and post lens; Frequency-doubling crystal can also use BBO, BiBO, LN, KNO except using LBO and PPLN
3, PPKTP, KTA, CBO, CLBO, PPMgOLN, KN, LiI and semi-conducting material etc.; Outgoing mirror can also adopt average mirror etc. except that the plano-concave mirror.The present invention can also be in the frequency-doubling crystal back or resonant cavity add and put other crystal, for example add and put the KD*P adjusting Q crystal and obtain pulse laser output; The present invention can be at Nd:GdVO
4Add in the middle of crystal and the pumping source and put input mirror, replace the end face of the laser crystal plane of incidence, constitute resonant cavity by input mirror and outgoing mirror as resonant cavity; Certainly input mirror and outgoing mirror all can remove need not, use that plated film replaces input mirror and outgoing mirror to form resonant cavity on corresponding crystal.
In addition, the present invention adopts the mode of semiconductor laser end pumping, can also adopt the mode of pumping source profile pump to realize certainly; The frequency multiplication mode can be that intracavity frequency doubling also can be a cavity external frequency multiplication; The present invention not only can be used to produce fundamental frequency light and two frequency doubled lights, also can produce frequency tripling, laser of quadruple etc., can also be used for simultaneously difference frequency light path and light path and parametric oscillation light path frequently, it is different and correspondingly change to some extent that its light path and plated film also can be as the case may be certainly.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (17)
1. an all solid state laser comprises resonant cavity, it is characterized in that described resonant cavity comprises the neodymium-doped vanadic acid gadolinium crystal as laser crystal, and the doping content of neodymium is at least 0.5atm% in the described neodymium-doped vanadic acid gadolinium crystal.
2. all solid state laser according to claim 1 is characterized in that described all solid state laser also comprises pumping source, and described pumping source emission can be by the light of the near-infrared wavelength of described neodymium-doped vanadic acid gadolinium crystal strong absorption.
3. all solid state laser according to claim 2 is characterized in that, described pumping source is semiconductor laser, xenon lamp or krypton lamp.
4. all solid state laser according to claim 3 is characterized in that, described semiconductor laser is that emission center wavelength is GaAs semiconductor laser or the GaAlAs semiconductor laser of 808nm.
5. all solid state laser according to claim 1 is characterized in that, described resonant cavity has the first chamber face and the second chamber face, and the described first chamber face is that pump light incides the face in the resonant cavity, and the described second chamber face is the output face of resonant cavity; The first chamber face of described resonant cavity and the second chamber face all are coated with the reflectance coating of 960nm.
6. all solid state laser according to claim 5 is characterized in that, the first chamber face of described resonant cavity is coated with the anti-reflection film to 808nm laser.
7. all solid state laser according to claim 5 is characterized in that, in the first chamber face and the second chamber face of described resonant cavity, has at least a chamber face to be coated with the anti-reflection film of 1063nm laser; In the first chamber face and the second chamber face of described resonant cavity, have at least a chamber face to be coated with the anti-reflection film of 1341nm laser.
8. all solid state laser according to claim 7 is characterized in that, the exit facet of described neodymium-doped vanadic acid gadolinium crystal is coated with the anti-reflection film of 1063nm and 1341nm.
9. all solid state laser according to claim 1 is characterized in that described all solid state laser also comprises coupled lens.
10. all solid state laser according to claim 9 is characterized in that, described coupled lens is GRIN Lens, post lens, aspherical mirror or coupled lens group.
11. all solid state laser according to claim 9 is characterized in that, the described coupled lens plane of incidence and exit facet all are coated with the anti-reflection film to wavelength 808nm.
12. all solid state laser according to claim 1 is characterized in that, described resonant cavity also comprises outgoing mirror.
13. all solid state laser according to claim 12 is characterized in that, described outgoing mirror is plano-concave mirror or average mirror.
14. according to claim 1 or 12 described all solid state lasers, it is characterized in that described all solid state laser also comprises at least one frequency-doubling crystal, described frequency-doubling crystal is placed on the output light path of described neodymium-doped vanadic acid gadolinium crystal.
15. all solid state laser according to claim 14 is characterized in that, described frequency-doubling crystal can be LBO, PPLN, BBO, BiBO, LN, KNO
3, PPKTP, KTA, CBO, CLBO, PPMgOLN, KN or LiI; Also can be semi-conducting material.
16. all solid state laser according to claim 1 is characterized in that, described all solid state laser also comprises temperature-adjusting device.
17. all solid state laser according to claim 16 is characterized in that, described temperature-adjusting device is used for described all solid state laser is controlled in 17 to 37 degrees centigrade temperature.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064457A (en) * | 2010-12-27 | 2011-05-18 | 东莞市环宇激光工程有限公司 | Linear cavity high-power all-solid-state laser |
| CN102403645A (en) * | 2011-11-28 | 2012-04-04 | 苏州生物医学工程技术研究所 | Quasi-three-level laser |
| CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
| WO2012088786A1 (en) * | 2010-12-30 | 2012-07-05 | 北京中视中科光电技术有限公司 | Blue laser device |
| WO2012088787A1 (en) * | 2010-12-30 | 2012-07-05 | 北京中视中科光电技术有限公司 | Green laser device |
| CN110471191A (en) * | 2019-08-02 | 2019-11-19 | 福州腾景光电科技有限公司 | A kind of novel alternative light source and its implementation for material processing |
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| WO2007032402A1 (en) * | 2005-09-14 | 2007-03-22 | Matsushita Electric Industrial Co., Ltd. | Laser light source, and display unit using it |
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| WO2007032402A1 (en) * | 2005-09-14 | 2007-03-22 | Matsushita Electric Industrial Co., Ltd. | Laser light source, and display unit using it |
| CN201345493Y (en) * | 2008-10-30 | 2009-11-11 | 北京中视中科光电技术有限公司 | All solid state laser |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
| CN102064457A (en) * | 2010-12-27 | 2011-05-18 | 东莞市环宇激光工程有限公司 | Linear cavity high-power all-solid-state laser |
| CN102064457B (en) * | 2010-12-27 | 2012-10-31 | 东莞市环宇激光工程有限公司 | Linear cavity high-power all-solid-state laser |
| WO2012088786A1 (en) * | 2010-12-30 | 2012-07-05 | 北京中视中科光电技术有限公司 | Blue laser device |
| WO2012088787A1 (en) * | 2010-12-30 | 2012-07-05 | 北京中视中科光电技术有限公司 | Green laser device |
| CN102403645A (en) * | 2011-11-28 | 2012-04-04 | 苏州生物医学工程技术研究所 | Quasi-three-level laser |
| CN110471191A (en) * | 2019-08-02 | 2019-11-19 | 福州腾景光电科技有限公司 | A kind of novel alternative light source and its implementation for material processing |
| CN110471191B (en) * | 2019-08-02 | 2021-03-30 | 腾景科技股份有限公司 | Novel multiband light source for material processing and implementation method thereof |
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