CN105633790A - Method for realizing visible laser by GaN laser diode pumping rare earth ion doped tantalate-niobate - Google Patents

Method for realizing visible laser by GaN laser diode pumping rare earth ion doped tantalate-niobate Download PDF

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Publication number
CN105633790A
CN105633790A CN201610133646.6A CN201610133646A CN105633790A CN 105633790 A CN105633790 A CN 105633790A CN 201610133646 A CN201610133646 A CN 201610133646A CN 105633790 A CN105633790 A CN 105633790A
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laser
gan
visible
crystals
laser diode
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彭方
张庆礼
殷绍唐
孙敦陆
孙贵花
刘文鹏
罗建乔
王小飞
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Hefei Institutes of Physical Science of CAS
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Hefei Institutes of Physical Science of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering

Abstract

The invention discloses a method for realizing visible laser by GaN laser diode pumping rare earth ion doped tantalate-niobate. According to the method, single crystals of oxide material tantalate (RETaO4) and niobate (RENbO4) with low phonon energy and crystal symmetry are adopted as a substrate; Pr+3, Sm3+ and Dy3+ are taken as active ions to be used as a laser working material; and a novel all-solid-state visible laser fundamental frequency light source is obtained by taking a GaN laser diode as the pumping source. The visible wave band fundamental frequency laser obtained by the scheme can adopt LBO, KTP, BBO and other non-linear crystals for frequency multiplication so as to obtain ultraviolet band or deep ultraviolet band all-solid-state laser; and therefore, the method is of great significance in obtaining new-wave-band ultraviolet laser and improving the efficiency and power of the ultraviolet solid laser, and the like.

Description

The laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization realizes the method for visible laser
Technical field
The present invention relates to the laser diode-pumped rare earth ion doped new passage of tantoniobate visible laser of GaN, belong to laser crystals and technical field of solid laser.
Background technology
Visible light wave range laser has important application prospect in fields such as materials processing, laser display, resource detection, specific communication, medical treatment. The main method utilizing laser crystals to realize visible laser at present is, by nonlinear optics converter technique, near-infrared laser is changed into visible laser. This kind of technology is not produce by laser diode (being called for short LD) pump-coupling, and therefore lasing efficiency is low, and system architecture is complicated, and cost performance is on the low side, limits its range of application and field.
Have benefited from the huge promotion of whole world LED illumination revolution, GaNLD has had significant progress in recent years, the blue light LD power of commercialization has reached a watt level, price has also dropped to about hundred yuan/watts, this provides new feasible way for producing visible laser with GaNLD pump-coupling laser crystals, makes the investigation and application of complete solid-state visible laser enter a brand-new stage. the rare earth ion that the employing GaNLD pump-coupling reported at present obtains visible laser only has Pr3+, Dy3+, Sm3+ tri-kinds, the visible laser research of early stage Pr3+ mainly concentrates on the low crystal of fluoride of phonon energy such as LiYF4, LiGdF4, KYF4, KY3F10, LiLuF4 etc., although the research mixing Pr3+ fluorochemical achieves and develops faster, but the chemical stability of fluorochemical and physical strength are poor, this brings very big difficulty to practical application, oxide compound is compared with fluorochemical, although its phonon energy is higher, the difficulty of stimulated radiation can be increased, but it has better chemical stability and physical strength, there is bigger actual application value, therefore, the visible laser of research Pr3+ doping oxide is more with potential applications. now, it is achieved what Pr3+, Dy3+, Sm3+ visible laser exported is the oxide crystal that phonon energy is lower, only has YAG, LuAP, YAP, Mg:SrAl12O19 several.
Summary of the invention
Technical problem to be solved by this invention is to provide laser diode-pumped Pr3+, Dy3+, Sm3+ doping tantoniobate of a kind of GaN of utilization to realize the method for visible laser, the chemical stability and the physical strength that the method overcome fluorochemical are poor, use the problems such as difficulty, provide more polyoxide substrate material, it is to increase the efficiency of ultraviolet Solid State Laser, power.
Technical problem to be solved by this invention realizes by the following technical solutions:
Utilizing the laser diode-pumped rare earth ion doped tantoniobate of GaN to realize a method for visible laser, it comprises:
(1) adulterate active ions in tantalate laser crystals matrix, niobate laser crystals matrix, then becomes tantalate laser crystals and niobate laser crystals;
(2) according to the absorbing wavelength of the laser pumping passage of active ions, select GaN laser diode that operation wavelength is mated mutually with active ions as pumping source;
(3) the doping tantalate laser crystals of active ions and niobate laser crystals are carried out pumping, then can realize visible ray Laser output.
Further, described tantalate laser crystals matrix comprises ScTaO4��YTaO4��LaTaO4��LuTaO4��GdTaO4; Niobate laser crystals matrix comprises ScNbO4��YNbO4��LaNbO4��LuNbO4��GdNbO4; And described tantalate laser crystals matrix and niobate laser crystals matrix are designated as REMO4, wherein REMO4Represent any one in laser crystals matrix.
Further, described active ions are Pr3+��Dy3+��Sm3+One of in, and active ions are for replacing in laser crystals matrix the case shared by Sc, Y, La, Lu, Gd, thus form laser crystals Pr respectively3+:REMO4��Dy3+:REMO4��Sm3+:REMO4��
Further, described laser crystals Pr3+:REMO4: employing optical maser wavelength is the GaN laser diode of 450nm, 470nm, 475nm, 488nm, passes through3H4��2S'+1L'J', namely2S'+1L'J'=3P2��3H4��1I6��3H4��3P1��3H4��3P0Transition passage, by Pr3+Particle be directly energized into3P0, or higher than its energy3P2��1I6��3P1Excited state, then transitted to by radiationless relaxation or other processes3P0, it is achieved3P0With lower energy level2S+1LJ, namely2S+1LJ=3H4��3H5��3H6��3F2��3F3��3F4Between population inversion, then pass through stimulated radiation3P0��3F2��3P0��3F4��3P0��3H6Obtain visible laser.
Further, described laser crystals Dy3+:REMO4, adopt the GaN laser diode of optical maser wavelength 430nm, 450nm, 483nm, pass through6H15/2��2S'+1L'J', namely2S'+1L'J'=4M21/2��6H15/2��4I315/2��6H15/2��4G411/2Transition passage, by Dy3+'s6H15/2Particle be directly energized into4G11/2, or higher than its energy4M21/2��4I315/2Excited state, transits to by non-radiative relaxation or by other processes4F9/2, it is achieved4F9/2With lower energy level2S+1LJ, namely2S+1LJ=6H15/2��6H13/2��6H11/2��6H9/2��6F11/2Between population inversion, pass through stimulated radiation4F9/2��6H13/2��4F9/2��6H11/2Then visible laser is obtained.
Further, described laser crystals Sm3+:REMO4, adopt the GaN laser diode of optical maser wavelength 465nm, 476nm, 483nm, pass through6H5/2��2S'+1L'J', namely2S'+1L'J'=4I313/2��6H5/2��4I311/2��6H5/2��4M15/2, by Sm3+'s6H5/2Particle excitated arrive2S'+1L'J', namely2S'+1L'J'=4I313/2��4I311/2��4M15/2Multiplicity, then by radiationless transition or other processes, relaxation or transit to upper laser level4G5/2, it is achieved4G5/2With lower energy level2S+1LJ, namely2S+1LJ=6H5/2��6H7/2��6H9/2��6H11/2��6H13/2��6F1/2��6H15/2��6F3/2��6F5/2��6F7/2Between population inversion, pass through stimulated radiation4G5/2��6H9/2��6H11/2��6H13/2Obtain visible laser.
Further, in laser crystals, owing to being subject to the effect of crystal field, active ions Pr3+��Dy3+��Sm3+Degenerate level2S+1LJ��2S'+1L'J'Multiple brilliant field energy level will be split into,2S+1LJ��2S'+1L'J'Represent2S+1LJDivided the brilliant field energy level that extremely2S'+1L'J'Divided the brilliant field energy inter-stage likely optical transition.
Further, the laser wavelength range of described GaN laser diode is 430nm��490nm.
The present invention also relates to a kind of laser diode-pumped Solid State Laser method of GaN, after adopting above-mentioned technological method to obtain the basic frequency laser being positioned at visible waveband, adopt nonlinear crystal, by general laser technology, basic frequency laser is carried out two frequencys multiplication, frequency tripling, thus obtain the laser being positioned at ultraviolet, deep ultraviolet wavelength.
Further, described nonlinear crystal is LBO, KDP, BBO.
Prior art is compared, and the useful effect of the present invention is embodied in:
The present invention uses tantalate and niobate laser crystals matrix (ScTaO4��YTaO4��LaTaO4��LuTaO4��GdTaO4��ScNbO4��YNbO4��LaNbO4��LuNbO4��GdNbO4, hereinafter abbreviated as REMO4) there is the phonon energy suitable with YAG, but REMO4Belong to oblique system (YAG is isometric system), crystal symmetry is low, this prohibits ring for the transition in the 4f configuration releasing rare earth ion and improves its luminous efficiency advantageously, in addition, this crystalloid also has very high thermal conductivity and Mohs' hardness, chemical stability is good, is the higher crystal of double refraction, is the laser matrix of excellent property; The present invention gives using tantoniobate oxide crystal as working-laser material, with new absorption pumping passage and laser channeling, obtains visible waveband laser. Thus obtained visible laser by two frequencys multiplication, frequency tripling and obtain ultraviolet, deep ultraviolet laser, for obtaining new wave band Ultra-Violet Laser, to improve the efficiency of ultraviolet Solid State Laser, power etc. significant.
Embodiment
In order to the present invention is realized technique means, creation characteristic, reach object and effect is easy to understand, set forth the present invention further.
Utilizing the laser diode-pumped rare earth ion doped tantoniobate of GaN to realize a method for visible laser, it comprises,
(1) in tantalate laser crystals matrix GdTaO4Middle doping active ions Pr3+, then become tantalate laser crystals (0.6at.%) Pr3+:GdTaO4;
(2) according to the absorbing wavelength of the laser pumping passage of active ions, select GaN laser diode that operation wavelength mates mutually with active ions as pumping source, the Pr of employing3+:GdTaO4Laser crystals component size is 3mm �� 3mm �� 5mm, and two 3mm �� 3mm end faces are polished to smooth finish and reach 5/10, and planeness reaches ��/10747nm, adopts 450nmGaN laser diode-pumped;
(3) the doping tantalate laser crystals of active ions and niobate laser crystals are carried out pumping, then visible ray Laser output can be realized, for the Laser Devices only exporting 747nm fundamental frequency light, adopt Ping-Ping cavity configuration, by inputting, coupled resonator mirror M1 and output coupling cavity mirror M2 forms chamber mirror, M1 is saturating to 448nm laser height, 747nm laser height is anti-, and 747nm laser part is passed through by M2, and transmitance is 4��6%. Pr3+:GdTaO4Crystal element is placed between M1, M2 and parallel to each other, is perpendicular to horizontal plane center and mutually aligns, M1 and M2 distance is about 20��30mm. The laser vertical of GaN laser diode is incident in M1, through lens focus in Pr3+:GdTaO4Crystal end-face, passes through3H4��2S'+1L'J', namely2S'+1L'J'=3P2��3H4��1I6��3H4��3P1��3H4��3P0Transition passage, by Pr3+Particle be directly energized into3P0, or higher than its energy3P2��1I6��3P1Excited state, then transitted to by radiationless relaxation or other processes3P0, it is achieved3P0With lower energy level2S+1LJ, namely2S+1LJ=3H4��3H5��3H6��3F2��3F3��3F4Between population inversion, then pass through stimulated radiation3P0��3F2��3P0��3F4��3P0��3H6Obtain visible laser, so namely constitute 747nm laser system.
The present invention also relates to a kind of laser diode-pumped Solid State Laser method of GaN, for the Laser Devices exporting 374nm frequency doubled light, adopt flat-recessed-recessed folding cavity configuration, chamber mirror is made up of plane chamber mirror M1, concave surface chamber mirror M3, M4, Pr3+:GdTaO4Crystal is placed between the chamber that M1, M2 are formed, and LBO is placed between the chamber mirror that M2, M3 are formed, and to 488nm laser height thoroughly, to 747nm laser height instead, M3, M4 plating is anti-to 747nm height, 374nm high transmittance film for M1. Lbo crystal adopts the critical phasing degree coupling of type i, is of a size of 2mm �� 2mm �� 10mm, all plates, at two end face, the anti-reflection film that 747nm, 374nm height is saturating. Distance between M1 and M3, M3 and M4 is respectively 52��64,35��45mm. So namely, constitute 374nm UV laser systems.
More than show and describe the ultimate principle of the present invention and the advantage of main characteristic sum the present invention. The technician of the industry should understand; the present invention is not restricted to the described embodiments; the principle that the present invention is just described described in above-described embodiment and specification sheets; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention. The claimed scope of the present invention is defined by appending claims and equivalent thereof.

Claims (10)

1. one kind utilizes the method that the laser diode-pumped rare earth ion doped tantoniobate of GaN realizes visible laser, it is characterised in that:
(1) adulterate active ions in tantalate laser crystals matrix, niobate laser crystals matrix, then becomes tantalate laser crystals and niobate laser crystals;
(2) according to the absorbing wavelength of the laser pumping passage of active ions, select GaN laser diode that operation wavelength is mated mutually with active ions as pumping source;
(3) the doping tantalate laser crystals of active ions and niobate laser crystals are carried out pumping, then can realize visible ray Laser output.
2. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization according to claim 1 realizes the method for visible laser, it is characterised in that: described tantalate laser crystals matrix comprises ScTaO4��YTaO4��LaTaO4��LuTaO4��GdTaO4; Niobate laser crystals matrix comprises ScNbO4��YNbO4��LaNbO4��LuNbO4��GdNbO4; And described tantalate laser crystals matrix and niobate laser crystals matrix are designated as REMO4, wherein REMO4Represent any one in laser crystals matrix.
3. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization according to claim 2 realizes the method for visible laser, it is characterised in that: described active ions are Pr3+��Dy3+��Sm3+One of in, and active ions are for replacing in laser crystals matrix the case shared by Sc, Y, La, Lu, Gd, thus form laser crystals Pr respectively3+:REMO4��Dy3+:REMO4��Sm3+:REMO4��
4. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization according to claim 3 realizes the method for visible laser, it is characterised in that: described laser crystals Pr3+:REMO4: employing optical maser wavelength is the GaN laser diode of 450nm, 470nm, 475nm, 488nm, passes through3H4��2S'+1L'J', namely2S'+1L'J'=3P2��3H4��1I6��3H4��3P1��3H4��3P0Transition passage, by Pr3+Particle be directly energized into3P0, or higher than its energy3P2��1I6��3P1Excited state, then transitted to by radiationless relaxation or other processes3P0, it is achieved3P0With lower energy level2S+1LJ, namely2S+1LJ=3H4��3H5��3H6��3F2��3F3��3F4Between population inversion, then pass through stimulated radiation3P0��3F2��3P0��3F4��3P0��3H6Obtain visible laser.
5. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization according to claim 3 realizes the method for visible laser, it is characterised in that: described laser crystals Dy3+:REMO4, employing optical maser wavelength is the GaN laser diode of 430nm, 450nm, 483nm, passes through6H15/2��2S'+1L'J', namely2S'+1L'J'=4M21/2��6H15/2��4I315/2��6H15/2��4G411/2Transition passage, by Dy3+'s6H15/2Particle be directly energized into4G11/2, or higher than its energy4M21/2��4I315/2Excited state, transits to by non-radiative relaxation or by other processes4F9/2, it is achieved4F9/2With lower energy level2S+1LJ, namely2S+1LJ=6H15/2��6H13/2��6H11/2��6H9/2��6F11/2Between population inversion, pass through stimulated radiation4F9/2��6H13/2��4F9/2��6H11/2Then visible laser is obtained.
6. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization according to claim 3 realizes the method for visible laser, it is characterised in that: described laser crystals Sm3+:REMO4, employing optical maser wavelength is the GaN laser diode of 465nm, 476nm, 483nm, passes through6H5/2��2S'+1L'J', namely2S��+1L'J'=4I313/2��6H5/2��4I311/2��6H5/2��4M15/2, by Sm3+'s6H5/2Particle excitated arrive2S'+1L'J', namely2S'+1L'J'=4M15/2��4I311/2��4I313/2Multiplicity, then by radiationless transition or other processes, relaxation or transit to upper laser level4G5/2, it is achieved4G5/2With lower energy level2S+1LJ, namely2S+1LJ=6H5/2��6H7/2��6H9/2��6H11/2��6H13/2��6F1/2��6H15/2��6F3/2��6F5/2��6F7/2Between population inversion, pass through stimulated radiation4G5/2��6H9/2��6H11/2��6H13/2Obtain visible laser.
7. the method for visible laser is realized according to the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization of described in claim 4��6 arbitrary, it is characterised in that: in laser crystals, owing to being subject to the effect of crystal field, active ions Pr3+��Dy3+��Sm3+Degenerate level2S+1LJ��2S'+1L'J'Multiple brilliant field energy level will be split into,2S+1LJ��2S'+1L'J'Represent2S+1LJDivided the brilliant field energy level that extremely2S'+1L'J'Divided the brilliant field energy inter-stage likely optical transition.
8. the laser diode-pumped rare earth ion doped tantoniobate of a kind of GaN of utilization of arbitrary according to claims 1 to 6 realizes the method for visible laser, it is characterised in that: the laser wavelength range of described GaN laser diode is 430nm��490nm.
9. the laser diode-pumped Solid State Laser method of GaN, it is characterized in that: after adopting the technological method of arbitrary as described in claim 4��6 to obtain the basic frequency laser being positioned at visible waveband, adopt nonlinear crystal, by general laser technology, basic frequency laser is carried out two frequencys multiplication, frequency tripling, thus obtain the laser being positioned at ultraviolet, deep ultraviolet wavelength.
10. a kind of laser diode-pumped Solid State Laser method of GaN according to claim 9, it is characterised in that: described nonlinear crystal is LBO, KDP, BBO.
CN201610133646.6A 2016-03-09 2016-03-09 Method for realizing visible laser by GaN laser diode pumping rare earth ion doped tantalate-niobate Pending CN105633790A (en)

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CN110002871A (en) * 2019-04-26 2019-07-12 昆明理工大学 A kind of two-phase rare earth tantalate ceramics and preparation method thereof
CN113437626A (en) * 2021-05-31 2021-09-24 福州大学 Device and method for enhancing self-excited Raman laser

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Publication number Priority date Publication date Assignee Title
CN110002871A (en) * 2019-04-26 2019-07-12 昆明理工大学 A kind of two-phase rare earth tantalate ceramics and preparation method thereof
CN113437626A (en) * 2021-05-31 2021-09-24 福州大学 Device and method for enhancing self-excited Raman laser
CN113437626B (en) * 2021-05-31 2022-07-12 福州大学 Device and method for enhancing self-excited Raman laser

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Application publication date: 20160601