CN105576490A - Method for realizing laser and frequency-doubled laser by utilizing GaN-based laser-diode-pumped rare-earth-ion-doped laser material - Google Patents

Method for realizing laser and frequency-doubled laser by utilizing GaN-based laser-diode-pumped rare-earth-ion-doped laser material Download PDF

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CN105576490A
CN105576490A CN201610133686.0A CN201610133686A CN105576490A CN 105576490 A CN105576490 A CN 105576490A CN 201610133686 A CN201610133686 A CN 201610133686A CN 105576490 A CN105576490 A CN 105576490A
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张庆礼
彭方
刘文鹏
罗建乔
孙贵花
孙敦陆
殷绍唐
张德明
李秀丽
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Hefei Institutes of Physical Science of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1685—Ceramics

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Abstract

The invention discloses a method for realizing laser and frequency-doubled laser by utilizing a GaN-based laser-diode-pumped rare-earth-ion-doped laser material. The method takes oxide crystals or transparent ceramics as laser materials, and obtains laser in the wave bands of visible light wave band and near-infrared wave band and the like by adopting a GaN-based laser diode pump and through a new absorption pump channel and a laser channel; the visible laser obtained thereby can be subjected to frequency doubling and frequency tripling to obtain ultraviolet and deep ultraviolet laser; and the method is of great significance to developing new wave band ultraviolet laser and improving efficiency and power and the like of the ultraviolet solid laser.

Description

A kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof
Technical field
The invention belongs to laser material and technical field of solid laser, be specifically related to a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof.
Background technology
Have benefited from the huge promotion of global LED illumination revolution, GaN base laser diode (being called for short LD) has had tremendous development in recent years, commercial GaN base LD power has reached a watt level, price has also dropped to about hundred yuan/watts, and also decline in continuation, this provides new feasible way for producing the visible laser of wave band that waits with GaN base LD pump-coupling laser crystal, to visible laser crystal and the laser technology research boom thereof of semiconductor laser pumping be caused, and make the investigation and application of all-solid state laser enter a brand-new stage.
The laser wavelength of GaN base LD covers the wider wave band of 370nm ~ 530nm, as the just existing GaN base LD sale covering multi-wavelength's specification of this wave band of Japanese NICHIA company, this makes multiple rare earth ion doped laser crystal or laser transparent ceramic be applicable to GaN base LD pumping, obtains the visible laser waiting wave band.For thus obtained visible waveband laser, after two frequencys multiplication or frequency tripling, ultraviolet, deep ultraviolet laser can be obtained, ultraviolet, deep ultraviolet laser is obtained with frequency tripling or quadruple near-infrared laser, estimated efficiency will be improved, thus will play a role in promoting to the development of Ultra-Violet Laser light source.
At present, existing GaN base LD obtains the report of visible laser, and with the most study in Fluoride Laser Crystals, Doped ions is Pr 3+, Dy 3+.Realize Pr in early days 3+the research of visible laser mainly concentrates on LiYF 4, LiGdF 4, KYF 4, KY 3f 10, LiLuF 4etc. having on the crystal of fluoride of low phonon energy.With oxide Y 3al 5o 12(YAG), Lu 3al 5o 12(LuAG), Gd 3ga 5o 12(GGG), Gd 3sc 2ga 3o 12(GSGG), Y 3ga 5o 12(YGG), Gd 3xy 3 (1-x)sc 2ga 3o 12(0<x<1, GYSGG), Gd 3sc 2al 3o 12(GSAG), Y 3sc 2al 3o 12(YSAG), Gd 3xy 3 (1-x)sc 2al 3o 12(0<x<1, GYSAG), YVO 4, GdVO 4, Y 1-xgd xvO 4(0<x<1), YAlO 3(YAP), LaAlO 3, Gd 2siO 5(GSO), Y 2siO 5(YSO), Sc 2siO 5, Lu 2siO 5, Lu 2 (1-x)y 2xsiO 5(0<x<1) as laser crystal or the pottery of matrix, have in technology of preparing, laser activity, optics, machinery and mechanical characteristic and study widely, belonged to very ripe laser material.But at present, in the all-solid state laser of GaN base LD pumping, in these crystal, only there is following relevant report: Pr 3+: YAP, Pr 3+: LuAlO 3with 3h 4→ 3p 2as pumping channel, 3p 0→ 3f 4red laser is obtained, Dy as laser channeling 3+: YAG with 6h 15/2→ 4g 11/2as pumping channel, 4f 9/2→ 6f 13/2obtain orange laser as laser channeling, remaining have not been reported using GaN base LD as the pumping channel of pumping source, laser channeling.And due to the chemical stability of fluoride and mechanical strength poor, crystal growth raw material, crystal growth preparation condition require harsh, and growing large-size monocrystalline difficulty, these define very large obstacle all to their extensive use.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize visible laser and frequency multiplication Ultra-Violet Laser thereof, the chemical stability and the mechanical strength that the method overcome fluoride are poor, the problems such as crystal growth raw material, crystal growth preparation condition require harsh, growing large-size monocrystalline difficulty.Relative to the method adopting near-infrared laser frequency multiplication to obtain Ultra-Violet Laser, invention increases the efficiency of frequency multiplication Ultra-Violet Laser.
Technical problem to be solved by this invention realizes by the following technical solutions:
Utilize the laser diode-pumped rare earth ion doped laser material of GaN base to realize a method for laser and double-frequency laser thereof, it comprises:
(1) doping with rare-earth ions in laser material matrix, becomes laser crystal or laser transparent ceramic then;
(2) for different laser crystals or laser transparent ceramic, according to the absorbing wavelength of the laser pumping passage of rear-earth-doped ion, select operation wavelength and its GaN base laser diode matched as pumping source.；
(3) pumping is carried out to the laser crystal of doping with rare-earth ions or laser transparent ceramic, then can realize visible light lasers and export.
Further, described laser material matrix comprises Y 3al 5o 12, Lu 3al 5o 12, Gd 3ga 5o 12, Gd 3sc 2ga 3o 12, Y 3ga 5o 12, Gd 3xy 3 (1-x)sc 2ga 3o 12, Gd 3sc 2al 3o 12, Y 3sc 2al 3o 12, Gd 3xy 3 (1-x)sc 2al 3o 12, YVO 4, GdVO 4, Y 1-xgd xvO 4, YAlO 3, LaAlO 3, Gd 2siO 5, Y 2siO 5, Sc 2siO 5, Lu 2siO 5, Lu 2 (1-x)y 2xsiO 5; And described above-mentioned matrix is designated as HOST, wherein HOST represents any one in laser material matrix, above-mentioned Gd 3xy 3 (1-x)ga 5o 12, Gd 3xy 3 (1-x)sc 2al 5o 12, Y 1-xgd xvO 4, Lu 2siO 5and Lu 2 (1-x)y 2xsiO 5in x span be 0<x<1.
Further, described rear-earth-doped ion is Pr 3+, Sm 3+, Tb 3+, Dy 3+, Ho 3+, Er 3+, Tm 3+one of in, and Doped ions is for replacing the case shared by Gd, Lu, La, the Y in matrix, thus formation laser material is Pr respectively 3+: HOST, Sm 3+: HOST, Tb 3+: HOST, Dy 3+: HOST, Ho 3+: HOST, Er 3+: HOST, Tm 3+: HOST.
Further, described laser material Pr 3+: HOST, by adopting Pr 3+'s 3h 4→ 2S'+1l' j', namely 2S'+1l' j'= 1i 6, 3p 1, 3p 0the electronics of Doped ions, as pumping channel, is directly energized into by multiplet absorptive transition 3p 0, or be energized into ratio 3p 0higher 1i 6, 3p 1excitation state, then by radiationless transition or other processes, Electron Relaxation or transit to 3p 0upper laser level, realizes 3p 0with its lower energy level 2S+1l j, namely 2S+1l j= 3h 4, 3h 5, 3h 6, 3f 2, 3f 3, 3f 4, 1g 4, 1d 2between population inversion, by stimulated radiation transition 3p 0→ 2S+1l jobtain Laser output, wherein with 3p 0→ 3f 2, 3p 0→ 3f 4, 3p 0→ 3h 4between optical transition be easier to obtain visible laser;
Described laser material Sm 3+: HOST, adopts Sm 3+'s 6h 5/2→ 2S'+1l' j', namely 2S'+1l' j'= 4m 15/2, 4i3 11/2, 6h 5/2→ 4i3 13/2the electronics of Doped ions, as pumping channel, is directly energized into these and compares upper laser level by multiplet absorptive transition 4g 5/2in higher excitation state, then by radiationless transition or other processes, relaxation or transit to upper laser level 4g 5/2, realize 4g 5/2with lower energy level 2S+1l jnamely 2S+1l j= 6h 5/2, 6h 7/2, 6h 9/2, 6h 11/2, 6h 13/2, 6f 1/2, 6h 15/2, 6f 3/2, 6f 5/2, 6f 7/2between population inversion, obtained by stimulated radiation 4g 5/2→ 2S+1l jthe Laser output of transition, wherein with 4g 5/2→ 6h 9/2, 6h 11/2, 6h 13/2, 6f 5/2between optical transition passage more relatively easily obtain laser;
Described laser material Tb 3+: HOST, adopts Tb 3+'s 7f 6→ 5d 4the electronics of Doped ions, as pumping channel, is directly energized into and compares upper laser level by multiplet absorptive transition 5d 4, realize 5d 4with non-ground state 7f 6crystal field splitted level | 7f 6population inversion between Γ γ >, obtains 5d 4with non-ground state | 7f 6the Laser output of transition between Γ γ >, this laser levels system is typical laser three level system;
Described laser material Dy 3+: HOST, adopts Dy 3+'s 6h 15/2→ 2S'+1l' j', namely 2S'+1l' j'= 4i3 15/2, 4g4 11/2, 4m 21/2, 4f3 7/2, 4i3 13/2, 4k1 17/2, 4m 19/2+the electronics of Doped ions, as pumping channel, is directly energized into these and compares upper laser level by multiplet absorptive transition 4f3 9/2the excitation state that energy is higher, then transits to by nonradiative relaxation process relaxation or by other processes 4f3 9/2, realize 4f 9with lower energy level 2S+1l jnamely 2S+1l j= 6h 15/2, 6h 13/2, 6h 11/2, 6h 9/2, 6f 11/2, 6f 9/2, 6h 7/2, 6h 5/2, 6f 7/2, 6f 5/2, 4f 3/2, 6f 1/2between population inversion, by gain amplify obtain 4f 9/2→ 2S+1l jthe Laser output of transition, 4f 9/2→ 6h 13/2, 6h 11/2between transition channel relatively easily realize Laser output, for Dy 3+: YAG, does not comprise use 6h 15/2→ 4g 11/2transition pumping, 4f 9/2→ 6h 13/2stimulated emission and obtain the passage of laser;
Described laser material Ho 3+: HOST, adopts Ho 3+'s 5i 8→ 2S'+1l' j', namely 2S'+1l' j'= 5f 3, 5f 2, 3k 8, 5g 6, 5g 5transition absorption passage, is directly energized into the electronics of Doped ions and compares upper laser level 5s 2above excitation state, then transits to by nonradiative relaxation process relaxation or by other processes 5s 2upper laser level, realizes 5s 2with lower energy level 2S+1l j, namely 2S+1l j= 5i 8, 5i 7, 5i 6, 5i 5, 5i 4, 5f 5between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 5s 2→ 5i 7, 5i 6, 5i 4relatively easily realize Laser output;
Described laser material Er 3+: HOST, adopts Er 3+'s 4i 15/2→ 2S'+1l' j', namely 2S'+1l' j'= 2h2 11/2, 4f 7/2, 4f 5/2, 4f 3/2, 4f 9/2, the electronics of Doped ions is directly energized into these and compares upper laser level 4s 3/2the excitation state that energy is higher, is then transitted to by nonradiative relaxation process relaxation or other processes 4s 3/2upper laser level, realizes 4s 3/2with lower energy level 2S+1l j, namely 2S+1l j= 4i 15/2, 4i 13/2, 4i 11/2, 4i 9/2, 4f 9/2between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 4s 3/2→ 4i 15/2, 4i 9/2relatively easily realize Laser output;
Described laser material Tm 3+: HOST, adopts Tm 3+'s 3h 6→ 1g 4absorptive transition, is directly energized into upper laser level by the electronics of Doped ions 1g 4, realize 1g 4with lower energy level 2S+1l j, namely 2S+1l j= 3h 6, 3f 4, 3h 5, 3h 4, 3f 3, 3f 2between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 1g 4→ 3h 5, 3h 4relatively easily realize Laser output.
Further, owing to being subject to the effect of the crystalline field that laser material matrix provides, the multiplet of rear-earth-doped ion 2S+1l j, 2S'+1l' j'in laser crystal or laser transparent ceramic, the degenerate energy level under free ion state will be split into multiple Crystal-field Energy Levels, 2S+1l j→ 2S'+1l' j'what represent is 2S+1l jdivide the Crystal-field Energy Levels that extremely 2S'+1l' j'divide likely optical transition between the Crystal-field Energy Levels that.
Further, the laser wavelength range of described GaN base laser diode is 370nm ~ 530nm.
The invention still further relates to a kind of laser diode-pumped Solid State Laser method of GaN base, after adopting above-mentioned technical method acquisition to be positioned at the basic frequency laser of visible waveband, adopt nonlinear crystal again, by general laser technology, frequency translation is carried out to basic frequency laser, obtain the laser being positioned at ultraviolet or deep ultraviolet short wavelength.
Further, described nonlinear crystal is β-BaB 2o 4, LiB 3o 5, CsLiB 6o 10, BiB 3o 3, KBBF, KTiOPO 4.
Prior art is compared, and beneficial effect of the present invention is embodied in:
The oxide used in the present invention is compared with fluoride, there is better chemical stability and mechanical strength, relatively easily prepare high quality and large size crystal or pottery, more be conducive to researching and developing and manufacture the high Laser Devices of high performance-price ratio, the extensive use being thus more conducive to the fields such as industry, scientific research, medical treatment is promoted; Give using oxide crystal or transparent ceramic as laser material, with new absorptive pumping passage and laser channeling, adopt the wave band of laser such as the laser diode-pumped acquisition of GaN base is visible, near-infrared, thus obtained visible laser by two frequencys multiplication, frequency tripling and obtain ultraviolet, deep ultraviolet laser, for the new wave band Ultra-Violet Laser of development, improve ultraviolet Solid State Laser efficiency, power etc. significant.
Accompanying drawing explanation
Fig. 1 is Er in the invention process row 3+: YSGG mono-crystalline structures figure;
Fig. 2 is Er in the invention process row 3+: the abosrption spectrogram of YSGG crystal.、
Embodiment
The technological means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with concrete diagram, setting forth the present invention further.
Utilize the laser diode-pumped rare earth ion doped laser material of GaN base to realize a method for laser and double-frequency laser thereof, it comprises,
(1) in laser material Gd 3xy 3 (1-x)ga 5o 12rare earth doped Doped ions Er in (0<x<1, GYSGG) 3+, then become laser crystal Er 3+: YSGG (as Fig. 1);
(2) for this laser crystal Er 3+: YSGG, gets the absorbing wavelength of the laser pumping passage of this laser crystal Doped ions, selects operation wavelength and its GaN base LD matched as pumping source, according to Er in Fig. 2 3+: the abosrption spectrogram of YSGG crystal, has stronger absworption peak, respectively from Er at 488nm, 518nm 3+'s 4i 15/2→ 2h 11/2, 4f 7/2multiplet between transition absorption, its absorption coefficient is: the absorption coefficient=14.4cm of 518nm -1, the absorption coefficient=13.1cm of 488nm -1.If absorbed 95% through the pump light of GaN base LD through an one way, then calculate 518, under 488nmGaN base LD pumping, required leement duration is 2.1mm, 2.3mm.Thus the laser material component size of (30at%) Er:YSGG is designed to 4mm × 4mm × 2.1mm, 4mm × 4mm × 2.3mm, two 2mm × 2mm end faces of crystal element are polished to fineness and reach 5/10, flatness reaches λ/10632.8nm, becomes Er:YSGG laser crystal element.
(3) pumping is carried out to the laser crystal of doping with rare-earth ions or laser transparent ceramic, then can realize visible light lasers to export, for the Laser Devices only exporting 558nm laser, adopt Ping-Ping cavity configuration, chamber mirror is by inputting coupling cavity mirror M1 and output coupling cavity mirror M2 forms, M1 plating is high thoroughly to 488nm, 518nm laser, to the high anti-film of 558nm laser, M2 to 558nm laser part through film, transmitance is 4 ~ 6%.Er:YSGG crystal element to be placed between M1, M2 and parallel to each other, and mutually align perpendicular to horizontal plane center, M1 and M2 distance is about 20 ~ 30mm.The laser vertical of GaN base LD is incident in M1, through lens focus in Er:YSGG crystal end-face, adopts Er 3+'s 4i 15/2→ 2S'+1l' j', namely 2S'+1l' j'= 2h2 11/2, 4f 7/2, 4f 5/2, 4f 3/2, 4f 9/2, the electronics of Doped ions is directly energized into these and compares upper laser level 4s 3/2the excitation state that energy is higher, is then transitted to by nonradiative relaxation process relaxation or other processes 4s 3/2upper laser level, realizes 4s 3/2with lower energy level 2S+1l j, namely 2S+1l j= 4i 15/2, 4i 13/2, 4i 11/2, 4i 9/2, 4f 9/2between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 4s 3/2→ 4i 15/2, 4i 9/2relatively easily realize Laser output, so namely constitute 558nm laser system.
The invention still further relates to a kind of laser diode-pumped Solid State Laser method of GaN base, for the Laser Devices exporting 279nm frequency doubled light, adopt flat-recessed-recessed refrative cavity structure, chamber mirror is made up of planar cavity mirror M1, concave surface chamber mirror M3, M4, crystal is placed between the chamber of M1, M2 formation, LiB 3o 5(LBO) be placed in M2-M3 form chamber mirror between, the film that M1 plating is high thoroughly to 488nm, 518nm laser, anti-to 558nm laser height, the film that M3, M4 plating is high instead to 555nm, 277.5nm is high, lbo crystal adopts the critical phase parallactic angle coupling of type i, be of a size of 2mm × 2mm × 10mm, all plate the high saturating anti-reflection film of 558nm, 279nm at two end face.Distance between M1 and M3, M3 and M4 is respectively 52 ~ 64,35 ~ 45mm.So namely, constitute 279nm UV laser systems.
The present invention gives using oxide crystal or transparent ceramic as laser material, with new absorptive pumping passage and laser channeling, adopt the wave band of laser such as the laser diode-pumped acquisition of GaN base is visible, near-infrared, thus obtained visible laser by two frequencys multiplication, frequency tripling and obtain ultraviolet, deep ultraviolet laser, for the new wave band Ultra-Violet Laser of development, improve ultraviolet Solid State Laser efficiency, power etc. significant.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.

Claims (8)

1. utilize the laser diode-pumped rare earth ion doped laser material of GaN base to realize a method for laser and double-frequency laser thereof, it is characterized in that:
(1) doping with rare-earth ions in laser material matrix, becomes laser crystal or laser transparent ceramic then;
(2) for different laser crystals or laser transparent ceramic, according to the absorbing wavelength of the laser pumping passage of rear-earth-doped ion, select operation wavelength and its GaN base laser diode matched as pumping source.；
(3) pumping is carried out to the laser crystal of doping with rare-earth ions or laser transparent ceramic, then can realize visible light lasers and export.
2. a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof according to claim 1, is characterized in that: described laser material matrix comprises Y 3al 5o 12, Lu 3al 5o 12, Gd 3ga 5o 12, Gd 3sc 2ga 3o 12, Y 3ga 5o 12, Gd 3xy 3 (1-x)sc 2ga 3o 12, Gd 3sc 2al 3o 12, Y 3sc 2al 3o 12, Gd 3xy 3 (1-x)sc 2al 3o 12, YVO 4, GdVO 4, Y 1-xgd xvO 4, YAlO 3, LaAlO 3, Gd 2siO 5, Y 2siO 5, Sc 2siO 5, Lu 2siO 5, Lu 2 (1-x)y 2xsiO 5; And described above-mentioned matrix is designated as HOST, wherein HOST represents any one in laser material matrix, above-mentioned Gd 3xy 3 (1-x)sc 2ga 2o 12, Gd 3xy 3 (1-x)sc 2al 3o 12, Y 1-xgd xvO 4, Lu 2siO 5and Lu 2 (1-x)y 2xsiO 5in x span be 0<x<1.
3. a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof according to claim 2, is characterized in that: described rear-earth-doped ion is Pr 3+, Sm 3+, Tb 3+, Dy 3+, Ho 3+, Er 3+, Tm 3+one of in, and Doped ions is for replacing the case shared by Gd, Lu, La, the Y in matrix, thus formation laser material is Pr respectively 3+: HOST, Sm 3+: HOST, Tb 3+: HOST, Dy 3+: HOST, Ho 3+: HOST, Er 3+: HOST, Tm 3+: HOST.
4. a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof according to claim 3, is characterized in that: described laser material Pr 3+: HOST, by adopting Pr 3+'s 3h 4→ 2S'+1l' j', namely 2S'+1l' j'= 1i 6, 3p 1, 3p 0the electronics of Doped ions, as pumping channel, is directly energized into by multiplet absorptive transition 3p 0, or be energized into ratio 3p 0higher 1i 6, 3p 1excitation state, then by radiationless transition or other processes, Electron Relaxation or transit to 3p 0upper laser level, realizes 3p 0with its lower energy level 2S+1l j, namely 2S+1l j= 3h 4, 3h 5, 3h 6, 3f 2, 3f 3, 3f 4, 1g 4, 1d 2between population inversion, by stimulated radiation transition 3p 0→ 2S+1l jobtain Laser output, wherein with 3p 0→ 3f 2, 3p 0→ 3f 4, 3p 0→ 3h 4between optical transition be easier to obtain visible laser;
Described laser material Sm 3+: HOST, adopts Sm 3+'s 6h 5/2→ 2S'+1l' j', i.e. 2S '+1l' j'= 4m 15/2, 4i3 11/2, 6h 5/2→ 4i3 13/2the electronics of Doped ions, as pumping channel, is directly energized into these and compares upper laser level by multiplet absorptive transition 4g 5/2in higher excitation state, then by radiationless transition or other processes, relaxation or transit to upper laser level 4g 5/2, realize 4g 5/2with lower energy level 2S+1l jnamely 2S+1l j= 6h 5/2, 6h 7/2, 6h 9/2, 6h 11/2, 6h 13/2, 6f 1/2, 6h 15/2, 6f 3/2, 6f 5/2, 6f 7/2between population inversion, obtained by stimulated radiation 4g 5/2→ 2S+1l jthe Laser output of transition, wherein with 4g 5/2→ 6h 9/2, 6h 11/2, 6h 13/2, 6f 5/2between optical transition passage more relatively easily obtain laser;
Described laser material Tb 3+: HOST, adopts Tb 3+'s 7f 6→ 5d 4the electronics of Doped ions, as pumping channel, is directly energized into and compares upper laser level by multiplet absorptive transition 5d 4, realize 5d 4with non-ground state 7f 6crystal field splitted level | 7f 6population inversion between Γ γ >, obtains 5d 4with non-ground state | 7f 6the Laser output of transition between Γ γ >, this laser levels system is typical laser three level system;
Described laser material Dy 3+: HOST, adopts Dy 3+'s 6h 15/2→ 2S'+1l' j', i.e. 2S '+1l' j'= 4i3 15/2, 4g4 11/2, 4m 21/2, 4f3 7/2, 4i3 13/2, 4k1 17/2, 4m 19/2+the electronics of Doped ions, as pumping channel, is directly energized into these and compares upper laser level by multiplet absorptive transition 4f3 9/2the excitation state that energy is higher, then transits to by nonradiative relaxation process relaxation or by other processes 4f3 9/2, realize 4f 9with lower energy level 2S+1l jnamely 2S+1l j= 6h 15/2, 6h 13/2, 6h 11/2, 6h 9/2, 6f 11/2, 6f 9/2, 6h 7/2, 6h 5/2, 6f 7/2, 6f 5/2, 4f 3/2, 6f 1/2between population inversion, by gain amplify obtain 4f 9/2→ 2S+1l jthe Laser output of transition, 4f 9/2→ 6h 13/2, 6h 11/2between transition channel relatively easily realize Laser output, for Dy 3+: YAG, does not comprise use 6h 15/2→ 4g 11/2transition pumping, 4f 9/2→ 6h 13/2stimulated emission and obtain the passage of laser;
Described laser material Ho 3+: HOST, adopts Ho 3+'s 5i 8→ 2S'+1l' j', namely 2S'+1l' j'= 5f 3, 5f 2, 3k 8, 5g 6, 5g 5transition absorption passage, is directly energized into the electronics of Doped ions and compares upper laser level 5s 2above excitation state, then transits to by nonradiative relaxation process relaxation or by other processes 5s 2upper laser level, realizes 5s 2with lower energy level 2S+1l j, namely 2S+1l j= 5i 8, 5i 7, 5i 6, 5i 5, 5i 4, 5f 5between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 5s 2→ 5i 7, 5i 6, 5i 4relatively easily realize Laser output;
Described laser material Er 3+: HOST, adopts Er 3+'s 4i 15/2→ 2S'+1l' j', i.e. 2S '+1l' j'= 2h2 11/2, 4f 7/2, 4f 5/2, 4f 3/2, 4f 9/2, the electronics of Doped ions is directly energized into these and compares upper laser level 4s 3/2the excitation state that energy is higher, is then transitted to by nonradiative relaxation process relaxation or other processes 4s 3/2upper laser level, realizes 4s 3/2with lower energy level 2S+1l j, namely 2S+1l j= 4i 15/2, 4i 13/2, 4i 11/2, 4i 9/2, 4f 9/2between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 4s 3/2→ 4i 15/2, 4i 9/2relatively easily realize Laser output;
Described laser material Tm 3+: HOST, adopts Tm 3+'s 3h 6→ 1g 4absorptive transition, is directly energized into upper laser level by the electronics of Doped ions 1g 4, realize 1g 4with lower energy level 2S+1l j, namely 2S+1l j= 3h 6, 3f 4, 3h 5, 3h 4, 3f 3, 3f 2between population inversion, by gain amplify obtain 5s 2→ 2S+1l jthe Laser output of transition.In these laser emission channels, 1g 4→ 3h 5, 3h 4relatively easily realize Laser output.
5. a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize visible laser according to claim 4, it is characterized in that: owing to being subject to the effect of the crystalline field that laser material matrix provides, the multiplet of rear-earth-doped ion 2S+1l j, 2S '+1l' j'in laser crystal or laser transparent ceramic, the degenerate energy level under free ion state will be split into multiple Crystal-field Energy Levels, 2S+1l j→ 2S'+1l' j'what represent is 2S+1l jdivide the Crystal-field Energy Levels that extremely 2S'+1l' j'divide likely optical transition between the Crystal-field Energy Levels that.
6. a kind of method utilizing the laser diode-pumped rare earth ion doped laser material of GaN base to realize laser and double-frequency laser thereof of any one according to claims 1 to 5, is characterized in that: the laser wavelength range of described GaN base laser diode is 370nm ~ 530nm.
7. the laser diode-pumped Solid State Laser method of GaN base, it is characterized in that: after adopting technical method as claimed in claim 6 acquisition to be positioned at the basic frequency laser of visible waveband, adopt nonlinear crystal again, by general laser technology, frequency translation is carried out to basic frequency laser, obtain the laser being positioned at ultraviolet or deep ultraviolet short wavelength.
8. the laser diode-pumped Solid State Laser method of a kind of GaN base according to claim 7, is characterized in that: described nonlinear crystal is β-BaB 2o 4, LiB 3o 5, CsLiB 6o 10, BiB 3o 3, KBBF, KTiOPO 4.
CN201610133686.0A 2016-03-09 2016-03-09 Method for realizing laser and frequency-doubled laser by utilizing GaN-based laser-diode-pumped rare-earth-ion-doped laser material Pending CN105576490A (en)

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WO2005117216A2 (en) * 2004-05-25 2005-12-08 Melles Griot, Inc. Short wavelength diode-pumped solid-state laser
CN101946377A (en) * 2008-02-19 2011-01-12 株式会社藤仓 Optical fiber laser

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Publication number Priority date Publication date Assignee Title
WO2005117216A2 (en) * 2004-05-25 2005-12-08 Melles Griot, Inc. Short wavelength diode-pumped solid-state laser
CN101946377A (en) * 2008-02-19 2011-01-12 株式会社藤仓 Optical fiber laser

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111117618A (en) * 2019-12-12 2020-05-08 浙江大学 Broadband near-infrared luminescent material and preparation method and application thereof
CN111117618B (en) * 2019-12-12 2021-07-13 浙江大学 Broadband near-infrared luminescent material and preparation method and application thereof

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